ES349649A1 - Un dispositivo electronico, en particular un circuito de cristal semiconductor integrado. - Google Patents

Un dispositivo electronico, en particular un circuito de cristal semiconductor integrado.

Info

Publication number
ES349649A1
ES349649A1 ES349649A ES349649A ES349649A1 ES 349649 A1 ES349649 A1 ES 349649A1 ES 349649 A ES349649 A ES 349649A ES 349649 A ES349649 A ES 349649A ES 349649 A1 ES349649 A1 ES 349649A1
Authority
ES
Spain
Prior art keywords
aluminium
nickel
layer
silicon oxide
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES349649A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES349649A1 publication Critical patent/ES349649A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H10P14/46—
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
ES349649A 1967-01-26 1968-01-23 Un dispositivo electronico, en particular un circuito de cristal semiconductor integrado. Expired ES349649A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL676701217A NL143369B (nl) 1967-01-26 1967-01-26 Werkwijze voor het aanbrengen van een elektrische aansluiting op een oppervlak van een halfgeleiderinrichting en halfgeleiderinrichting verkregen volgens deze werkwijze.

Publications (1)

Publication Number Publication Date
ES349649A1 true ES349649A1 (es) 1969-10-01

Family

ID=19799131

Family Applications (1)

Application Number Title Priority Date Filing Date
ES349649A Expired ES349649A1 (es) 1967-01-26 1968-01-23 Un dispositivo electronico, en particular un circuito de cristal semiconductor integrado.

Country Status (11)

Country Link
JP (1) JPS514631B1 (OSRAM)
AT (1) AT280351B (OSRAM)
BE (1) BE709837A (OSRAM)
CA (1) CA918813A (OSRAM)
CH (1) CH468698A (OSRAM)
DE (1) DE1614310C3 (OSRAM)
ES (1) ES349649A1 (OSRAM)
FR (1) FR1551826A (OSRAM)
GB (1) GB1193373A (OSRAM)
NL (1) NL143369B (OSRAM)
SE (1) SE363191B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176938A (en) * 1985-06-24 1987-01-07 Nat Semiconductor Corp Pad metallization structure

Also Published As

Publication number Publication date
DE1614310C3 (de) 1975-05-28
AT280351B (de) 1970-04-10
NL143369B (nl) 1974-09-16
CH468698A (de) 1969-02-15
SE363191B (OSRAM) 1974-01-07
CA918813A (en) 1973-01-09
GB1193373A (en) 1970-05-28
BE709837A (OSRAM) 1968-07-24
JPS514631B1 (OSRAM) 1976-02-13
FR1551826A (OSRAM) 1968-12-27
NL6701217A (OSRAM) 1968-07-29
DE1614310A1 (de) 1970-08-13
DE1614310B2 (de) 1974-10-10

Similar Documents

Publication Publication Date Title
US3567509A (en) Metal-insulator films for semiconductor devices
GB1326758A (en) Integrated semiconductor structure
US3456335A (en) Contacting arrangement for solidstate components
GB938181A (en) Improvements in or relating to semiconductor devices
GB953058A (en) Semiconductor device and method of making same
US3429029A (en) Semiconductor device
GB1143148A (en) Air gap isolated semiconductor device
GB1285525A (en) Masking techniques for use in fabricating microelectronic components and articles produced thereby
GB1023531A (en) Improvements in or relating to semiconductor devices
US3609470A (en) Semiconductor devices with lines and electrodes which contain 2 to 3 percent silicon with the remainder aluminum
GB1193868A (en) Ohmic Contacts for Semiconductor Devices
GB1466679A (en) Manufacture of semiconductor devices
US3716429A (en) Method of making semiconductor devices
US3567506A (en) Method for providing a planar transistor with heat-dissipating top base and emitter contacts
US3437888A (en) Method of providing electrical contacts by sputtering a film of gold on a layer of sputtered molybdenum
US3590478A (en) Method of forming electrical leads for semiconductor device
GB967002A (en) Improvements in or relating to semiconductor devices
US3490943A (en) Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods
US3710204A (en) A semiconductor device having a screen electrode of intrinsic semiconductor material
US3408271A (en) Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates
ES349649A1 (es) Un dispositivo electronico, en particular un circuito de cristal semiconductor integrado.
US3088435A (en) Masking device useful for making transistors
US3447984A (en) Method for forming sharply defined apertures in an insulating layer
GB1283376A (en) A method of producing a semiconductor device or a circuit with layer-type components
US2629767A (en) Semiconductor amplifier or oscillator device