ES341902A1 - Procedimiento de accionamiento para dispositivo de memoria de cambio de fase. - Google Patents
Procedimiento de accionamiento para dispositivo de memoria de cambio de fase.Info
- Publication number
- ES341902A1 ES341902A1 ES341902A ES341902A ES341902A1 ES 341902 A1 ES341902 A1 ES 341902A1 ES 341902 A ES341902 A ES 341902A ES 341902 A ES341902 A ES 341902A ES 341902 A1 ES341902 A1 ES 341902A1
- Authority
- ES
- Spain
- Prior art keywords
- turn
- circuit
- breakdown voltage
- state
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 abstract 9
- 230000000903 blocking effect Effects 0.000 abstract 5
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
- Generation Of Surge Voltage And Current (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55794466A | 1966-06-16 | 1966-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES341902A1 true ES341902A1 (es) | 1968-11-01 |
Family
ID=24227496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES341902A Expired ES341902A1 (es) | 1966-06-16 | 1967-06-16 | Procedimiento de accionamiento para dispositivo de memoria de cambio de fase. |
Country Status (7)
Country | Link |
---|---|
US (1) | US3448302A (es) |
BE (1) | BE700015A (es) |
CH (1) | CH474819A (es) |
ES (1) | ES341902A1 (es) |
GB (1) | GB1190393A (es) |
NL (1) | NL6708377A (es) |
SE (1) | SE336924B (es) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151488A (en) * | 1978-02-22 | 1979-04-24 | Raytheon Company | Pulsed power supply |
US4199692A (en) * | 1978-05-16 | 1980-04-22 | Harris Corporation | Amorphous non-volatile ram |
US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6835591B2 (en) * | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US7566478B2 (en) | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6574130B2 (en) * | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
AU2002326868A1 (en) * | 2002-09-11 | 2004-04-30 | Ovonyx, Inc. | Programming a phase-change material memory |
US7560136B2 (en) | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
US7075141B2 (en) * | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
US6995046B2 (en) * | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
US7211854B2 (en) * | 2003-06-09 | 2007-05-01 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
DE20321085U1 (de) * | 2003-10-23 | 2005-12-29 | Commissariat à l'Energie Atomique | Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US7330369B2 (en) * | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US20050218398A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics |
US7019391B2 (en) * | 2004-04-06 | 2006-03-28 | Bao Tran | NANO IC packaging |
US20050218397A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics for programmable array IC |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
US7671398B2 (en) * | 2005-02-23 | 2010-03-02 | Tran Bao Q | Nano memory, light, energy, antenna and strand-based systems and methods |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
DE102006004218B3 (de) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Elektromechanische Speicher-Einrichtung und Verfahren zum Herstellen einer elektromechanischen Speicher-Einrichtung |
US8199576B2 (en) * | 2009-04-08 | 2012-06-12 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
US8351236B2 (en) | 2009-04-08 | 2013-01-08 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
US7983065B2 (en) * | 2009-04-08 | 2011-07-19 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
US8526237B2 (en) | 2010-06-08 | 2013-09-03 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof |
US20110297912A1 (en) | 2010-06-08 | 2011-12-08 | George Samachisa | Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof |
WO2014159361A1 (en) | 2013-03-13 | 2014-10-02 | The Penn State Research Foundation | Rf switch selectively regulating rf energy transmission |
FR3048555B1 (fr) * | 2016-03-02 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure de commutateur comportant plusieurs canaux de materiau a changement de phase et electrodes de commande interdigitees |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2948837A (en) * | 1956-09-04 | 1960-08-09 | Mc Graw Edison Co | Solid state electronic switch and circuits therefor |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
-
1966
- 1966-06-16 US US557944A patent/US3448302A/en not_active Expired - Lifetime
-
1967
- 1967-06-09 GB GB26734/67A patent/GB1190393A/en not_active Expired
- 1967-06-14 CH CH843167A patent/CH474819A/de not_active IP Right Cessation
- 1967-06-16 BE BE700015D patent/BE700015A/xx unknown
- 1967-06-16 SE SE08508/67A patent/SE336924B/xx unknown
- 1967-06-16 NL NL6708377A patent/NL6708377A/xx unknown
- 1967-06-16 ES ES341902A patent/ES341902A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL6708377A (es) | 1967-12-18 |
CH474819A (de) | 1969-06-30 |
US3448302A (en) | 1969-06-03 |
BE700015A (es) | 1967-12-18 |
GB1190393A (en) | 1970-05-06 |
SE336924B (es) | 1971-07-19 |
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