CH474819A - Verfahren zur Steuerung eines bipolaren Festkörperschalters - Google Patents
Verfahren zur Steuerung eines bipolaren FestkörperschaltersInfo
- Publication number
- CH474819A CH474819A CH843167A CH843167A CH474819A CH 474819 A CH474819 A CH 474819A CH 843167 A CH843167 A CH 843167A CH 843167 A CH843167 A CH 843167A CH 474819 A CH474819 A CH 474819A
- Authority
- CH
- Switzerland
- Prior art keywords
- controlling
- state switch
- bipolar solid
- bipolar
- solid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Electronic Switches (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55794466A | 1966-06-16 | 1966-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH474819A true CH474819A (de) | 1969-06-30 |
Family
ID=24227496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH843167A CH474819A (de) | 1966-06-16 | 1967-06-14 | Verfahren zur Steuerung eines bipolaren Festkörperschalters |
Country Status (7)
Country | Link |
---|---|
US (1) | US3448302A (de) |
BE (1) | BE700015A (de) |
CH (1) | CH474819A (de) |
ES (1) | ES341902A1 (de) |
GB (1) | GB1190393A (de) |
NL (1) | NL6708377A (de) |
SE (1) | SE336924B (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4151488A (en) * | 1978-02-22 | 1979-04-24 | Raytheon Company | Pulsed power supply |
US4199692A (en) * | 1978-05-16 | 1980-04-22 | Harris Corporation | Amorphous non-volatile ram |
US7566478B2 (en) | 2001-07-25 | 2009-07-28 | Nantero, Inc. | Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6919592B2 (en) | 2001-07-25 | 2005-07-19 | Nantero, Inc. | Electromechanical memory array using nanotube ribbons and method for making same |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
US6911682B2 (en) | 2001-12-28 | 2005-06-28 | Nantero, Inc. | Electromechanical three-trace junction devices |
US6924538B2 (en) | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
US7176505B2 (en) * | 2001-12-28 | 2007-02-13 | Nantero, Inc. | Electromechanical three-trace junction devices |
US7335395B2 (en) | 2002-04-23 | 2008-02-26 | Nantero, Inc. | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
CN100449647C (zh) * | 2002-09-11 | 2009-01-07 | 奥翁尼克斯公司 | 编程相变材料存储器 |
US7560136B2 (en) | 2003-01-13 | 2009-07-14 | Nantero, Inc. | Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
US7075141B2 (en) * | 2003-03-28 | 2006-07-11 | Nantero, Inc. | Four terminal non-volatile transistor device |
US7113426B2 (en) * | 2003-03-28 | 2006-09-26 | Nantero, Inc. | Non-volatile RAM cell and array using nanotube switch position for information state |
US7294877B2 (en) * | 2003-03-28 | 2007-11-13 | Nantero, Inc. | Nanotube-on-gate FET structures and applications |
US6995046B2 (en) * | 2003-04-22 | 2006-02-07 | Nantero, Inc. | Process for making byte erasable devices having elements made with nanotubes |
US7045421B2 (en) * | 2003-04-22 | 2006-05-16 | Nantero, Inc. | Process for making bit selectable devices having elements made with nanotubes |
US7274064B2 (en) * | 2003-06-09 | 2007-09-25 | Nanatero, Inc. | Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
US6982903B2 (en) * | 2003-06-09 | 2006-01-03 | Nantero, Inc. | Field effect devices having a source controlled via a nanotube switching element |
DE10349750A1 (de) * | 2003-10-23 | 2005-05-25 | Commissariat à l'Energie Atomique | Phasenwechselspeicher, Phasenwechselspeicheranordnung, Phasenwechselspeicherzelle, 2D-Phasenwechselspeicherzellen-Array, 3D-Phasenwechselspeicherzellen-Array und Elektronikbaustein |
US7528437B2 (en) * | 2004-02-11 | 2009-05-05 | Nantero, Inc. | EEPROMS using carbon nanotubes for cell storage |
US20050218397A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics for programmable array IC |
US20050218398A1 (en) * | 2004-04-06 | 2005-10-06 | Availableip.Com | NANO-electronics |
US7330369B2 (en) * | 2004-04-06 | 2008-02-12 | Bao Tran | NANO-electronic memory array |
US7019391B2 (en) * | 2004-04-06 | 2006-03-28 | Bao Tran | NANO IC packaging |
US7709880B2 (en) * | 2004-06-09 | 2010-05-04 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
US6955937B1 (en) | 2004-08-12 | 2005-10-18 | Lsi Logic Corporation | Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell |
US7598544B2 (en) * | 2005-01-14 | 2009-10-06 | Nanotero, Inc. | Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
US8362525B2 (en) * | 2005-01-14 | 2013-01-29 | Nantero Inc. | Field effect device having a channel of nanofabric and methods of making same |
US7671398B2 (en) * | 2005-02-23 | 2010-03-02 | Tran Bao Q | Nano memory, light, energy, antenna and strand-based systems and methods |
US7394687B2 (en) * | 2005-05-09 | 2008-07-01 | Nantero, Inc. | Non-volatile-shadow latch using a nanotube switch |
US7479654B2 (en) * | 2005-05-09 | 2009-01-20 | Nantero, Inc. | Memory arrays using nanotube articles with reprogrammable resistance |
TWI324773B (en) * | 2005-05-09 | 2010-05-11 | Nantero Inc | Non-volatile shadow latch using a nanotube switch |
DE102006004218B3 (de) * | 2006-01-30 | 2007-08-16 | Infineon Technologies Ag | Elektromechanische Speicher-Einrichtung und Verfahren zum Herstellen einer elektromechanischen Speicher-Einrichtung |
US7983065B2 (en) * | 2009-04-08 | 2011-07-19 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
US8199576B2 (en) * | 2009-04-08 | 2012-06-12 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
US8351236B2 (en) * | 2009-04-08 | 2013-01-08 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
US8547720B2 (en) | 2010-06-08 | 2013-10-01 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines |
US8526237B2 (en) | 2010-06-08 | 2013-09-03 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof |
WO2014159361A1 (en) | 2013-03-13 | 2014-10-02 | The Penn State Research Foundation | Rf switch selectively regulating rf energy transmission |
FR3048555B1 (fr) * | 2016-03-02 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Structure de commutateur comportant plusieurs canaux de materiau a changement de phase et electrodes de commande interdigitees |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2948837A (en) * | 1956-09-04 | 1960-08-09 | Mc Graw Edison Co | Solid state electronic switch and circuits therefor |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
-
1966
- 1966-06-16 US US557944A patent/US3448302A/en not_active Expired - Lifetime
-
1967
- 1967-06-09 GB GB26734/67A patent/GB1190393A/en not_active Expired
- 1967-06-14 CH CH843167A patent/CH474819A/de not_active IP Right Cessation
- 1967-06-16 ES ES341902A patent/ES341902A1/es not_active Expired
- 1967-06-16 NL NL6708377A patent/NL6708377A/xx unknown
- 1967-06-16 BE BE700015D patent/BE700015A/xx unknown
- 1967-06-16 SE SE08508/67A patent/SE336924B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
SE336924B (de) | 1971-07-19 |
BE700015A (de) | 1967-12-18 |
US3448302A (en) | 1969-06-03 |
GB1190393A (en) | 1970-05-06 |
ES341902A1 (es) | 1968-11-01 |
NL6708377A (de) | 1967-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |