ES338980A1 - Dispositivo de termistor. - Google Patents
Dispositivo de termistor.Info
- Publication number
- ES338980A1 ES338980A1 ES338980A ES338980A ES338980A1 ES 338980 A1 ES338980 A1 ES 338980A1 ES 338980 A ES338980 A ES 338980A ES 338980 A ES338980 A ES 338980A ES 338980 A1 ES338980 A1 ES 338980A1
- Authority
- ES
- Spain
- Prior art keywords
- leads
- diamond
- nickel
- bonding
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000010432 diamond Substances 0.000 abstract 6
- 229910003460 diamond Inorganic materials 0.000 abstract 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000010304 firing Methods 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 241000587161 Gomphocarpus Species 0.000 abstract 1
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000005354 aluminosilicate glass Substances 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000012611 container material Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052903 pyrophyllite Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 229910002058 ternary alloy Inorganic materials 0.000 abstract 1
- 238000011282 treatment Methods 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/048—Carbon or carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49085—Thermally variable
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54364966A | 1966-04-19 | 1966-04-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES338980A1 true ES338980A1 (es) | 1968-04-16 |
Family
ID=24168952
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES338980A Expired ES338980A1 (es) | 1966-04-19 | 1967-04-06 | Dispositivo de termistor. |
| ES338981A Expired ES338981A1 (es) | 1966-04-19 | 1967-04-06 | Procedimiento para la fabricacion de un termistor. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES338981A Expired ES338981A1 (es) | 1966-04-19 | 1967-04-06 | Procedimiento para la fabricacion de un termistor. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3435399A (es) |
| AT (1) | AT283511B (es) |
| BE (1) | BE696188A (es) |
| CH (1) | CH476381A (es) |
| DE (1) | DE1640218A1 (es) |
| DK (1) | DK121966B (es) |
| ES (2) | ES338980A1 (es) |
| GB (1) | GB1168133A (es) |
| IL (1) | IL27441A (es) |
| LU (1) | LU53260A1 (es) |
| NL (1) | NL6705336A (es) |
| SE (1) | SE336016B (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1543297A (fr) * | 1967-08-09 | 1968-10-25 | Radiotechnique Coprim Rtc | Résistances en couche mince à coefficient de température négatif et leur procédé de fabrication |
| US3735321A (en) * | 1971-06-18 | 1973-05-22 | Gen Electric | Thermistor |
| US4525179A (en) * | 1981-07-27 | 1985-06-25 | General Electric Company | Process for making diamond and cubic boron nitride compacts |
| DE3784612T2 (de) * | 1986-09-26 | 1993-09-02 | Sumitomo Electric Industries | Thermistor und verfahren zu seiner herstellung. |
| JP2695000B2 (ja) * | 1989-04-11 | 1997-12-24 | 住友電気工業株式会社 | サーミスタ及びその製造方法 |
| JP2773219B2 (ja) * | 1989-04-12 | 1998-07-09 | 住友電気工業株式会社 | 半導体装置 |
| GB9025798D0 (en) * | 1990-11-28 | 1991-01-09 | De Beers Ind Diamond | Diamond fluid flow sensor |
| US5852397A (en) * | 1992-07-09 | 1998-12-22 | Raychem Corporation | Electrical devices |
| EP0760157B1 (en) | 1994-05-16 | 1998-08-26 | Raychem Corporation | Electrical devices comprising a ptc resistive element |
| US6854176B2 (en) * | 1999-09-14 | 2005-02-15 | Tyco Electronics Corporation | Process for manufacturing a composite polymeric circuit protection device |
| US6640420B1 (en) * | 1999-09-14 | 2003-11-04 | Tyco Electronics Corporation | Process for manufacturing a composite polymeric circuit protection device |
| CN103963380B (zh) * | 2014-04-28 | 2016-01-13 | 中国人民解放军国防科学技术大学 | 耐高温、高结合强度的低红外发射率复合涂层及其制备方法 |
| DE102016107931A1 (de) * | 2016-04-28 | 2017-11-02 | Epcos Ag | Elektronisches Bauelement zur Einschaltstrombegrenzung und Verwendung eines elektronischen Bauelements |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2271774A (en) * | 1939-03-04 | 1942-02-03 | Allen Bradley Co | Molded insulated resistor |
| US2700720A (en) * | 1948-12-15 | 1955-01-25 | Julius J Torok | Thermistor |
| US3037266A (en) * | 1957-01-30 | 1962-06-05 | Allen Bradley Co | Method for making sealed resistors |
| NL281867A (es) * | 1961-08-09 | |||
| US3221393A (en) * | 1961-09-05 | 1965-12-07 | Victory Engineering Corp | Method of making bead type thermistors |
| GB1002704A (en) * | 1962-12-14 | 1965-08-25 | Grace W R & Co | Improvements in the production of thermistor devices |
| US3341473A (en) * | 1966-02-16 | 1967-09-12 | Carborundum Co | High beta thermistors |
-
1966
- 1966-04-19 US US543649A patent/US3435399A/en not_active Expired - Lifetime
-
1967
- 1967-02-15 IL IL27441A patent/IL27441A/xx unknown
- 1967-03-23 LU LU53260D patent/LU53260A1/xx unknown
- 1967-03-28 BE BE696188D patent/BE696188A/xx unknown
- 1967-03-31 DK DK188367AA patent/DK121966B/da unknown
- 1967-04-06 ES ES338980A patent/ES338980A1/es not_active Expired
- 1967-04-06 ES ES338981A patent/ES338981A1/es not_active Expired
- 1967-04-14 NL NL6705336A patent/NL6705336A/xx not_active Application Discontinuation
- 1967-04-15 DE DE19671640218 patent/DE1640218A1/de active Pending
- 1967-04-18 GB GB07692/67A patent/GB1168133A/en not_active Expired
- 1967-04-18 CH CH545567A patent/CH476381A/de not_active IP Right Cessation
- 1967-04-19 AT AT372167A patent/AT283511B/de not_active IP Right Cessation
- 1967-04-19 SE SE05487/67A patent/SE336016B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1640218A1 (de) | 1970-12-03 |
| DK121966B (da) | 1971-12-27 |
| CH476381A (de) | 1969-07-31 |
| ES338981A1 (es) | 1968-04-16 |
| LU53260A1 (es) | 1967-05-23 |
| NL6705336A (es) | 1967-10-20 |
| BE696188A (es) | 1967-09-01 |
| SE336016B (es) | 1971-06-21 |
| IL27441A (en) | 1970-09-17 |
| GB1168133A (en) | 1969-10-22 |
| US3435399A (en) | 1969-03-25 |
| AT283511B (de) | 1970-08-10 |
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