ES328080A1 - Un dispositivo transistor. - Google Patents

Un dispositivo transistor.

Info

Publication number
ES328080A1
ES328080A1 ES0328080A ES328080A ES328080A1 ES 328080 A1 ES328080 A1 ES 328080A1 ES 0328080 A ES0328080 A ES 0328080A ES 328080 A ES328080 A ES 328080A ES 328080 A1 ES328080 A1 ES 328080A1
Authority
ES
Spain
Prior art keywords
region
type
conductivity
base region
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0328080A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES328080A1 publication Critical patent/ES328080A1/es
Expired legal-status Critical Current

Links

Classifications

    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W99/00—

Landscapes

  • Bipolar Transistors (AREA)
  • Lead Frames For Integrated Circuits (AREA)
ES0328080A 1965-06-21 1966-06-18 Un dispositivo transistor. Expired ES328080A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US465345A US3381183A (en) 1965-06-21 1965-06-21 High power multi-emitter transistor

Publications (1)

Publication Number Publication Date
ES328080A1 true ES328080A1 (es) 1967-08-01

Family

ID=23847435

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0328080A Expired ES328080A1 (es) 1965-06-21 1966-06-18 Un dispositivo transistor.

Country Status (5)

Country Link
US (1) US3381183A (OSRAM)
DE (1) DE1564534B2 (OSRAM)
ES (1) ES328080A1 (OSRAM)
GB (1) GB1123398A (OSRAM)
NL (1) NL6608531A (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
DE1564755A1 (de) * 1966-11-10 1970-05-14 Siemens Ag Leistungstransistor
US3602984A (en) * 1967-10-02 1971-09-07 Nasa Method of manufacturing semi-conductor devices using refractory dielectrics
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
US3500066A (en) * 1968-01-10 1970-03-10 Bell Telephone Labor Inc Radio frequency power transistor with individual current limiting control for thermally isolated regions
US3896486A (en) * 1968-05-06 1975-07-22 Rca Corp Power transistor having good thermal fatigue capabilities
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
DE2952318C2 (de) * 1979-12-24 1986-09-18 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltungsanordnung und Verfahren zu ihrer Herstellung
GB2095904B (en) * 1981-03-23 1985-11-27 Gen Electric Semiconductor device with built-up low resistance contact and laterally conducting second contact
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen
IT1234517B (it) * 1988-05-05 1992-05-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore bipolare di potenza e procedimento per la sua fabbricazione

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2831787A (en) * 1954-07-27 1958-04-22 Emeis
US2778980A (en) * 1954-08-30 1957-01-22 Gen Electric High power junction semiconductor device
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
NL233303A (OSRAM) * 1957-11-30
NL113347C (OSRAM) * 1958-10-15
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor
US3287612A (en) * 1963-12-17 1966-11-22 Bell Telephone Labor Inc Semiconductor contacts and protective coatings for planar devices
US3241013A (en) * 1962-10-25 1966-03-15 Texas Instruments Inc Integral transistor pair for use as chopper
BE643783A (fr) * 1963-02-19 1964-05-29 Forges Et Ateliers De Constructions Electriques De Jeumont Dispositif de commutation de puissance à semi-conducteur
BE650116A (OSRAM) * 1963-07-05 1900-01-01
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3275912A (en) * 1963-12-17 1966-09-27 Sperry Rand Corp Microelectronic chopper circuit having symmetrical base current feed

Also Published As

Publication number Publication date
DE1564534B2 (de) 1972-09-28
GB1123398A (en) 1968-08-14
US3381183A (en) 1968-04-30
NL6608531A (OSRAM) 1966-12-22
DE1564534A1 (de) 1970-09-17

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