ES325504A1 - Un dispositivo semiconductor de efecto de campo de puerta aislada. - Google Patents

Un dispositivo semiconductor de efecto de campo de puerta aislada.

Info

Publication number
ES325504A1
ES325504A1 ES0325504A ES325504A ES325504A1 ES 325504 A1 ES325504 A1 ES 325504A1 ES 0325504 A ES0325504 A ES 0325504A ES 325504 A ES325504 A ES 325504A ES 325504 A1 ES325504 A1 ES 325504A1
Authority
ES
Spain
Prior art keywords
translation
machine
field effect
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0325504A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES325504A1 publication Critical patent/ES325504A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P32/00—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
ES0325504A 1965-04-15 1966-04-13 Un dispositivo semiconductor de efecto de campo de puerta aislada. Expired ES325504A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448506A US3355637A (en) 1965-04-15 1965-04-15 Insulated-gate field effect triode with an insulator having the same atomic spacing as the channel

Publications (1)

Publication Number Publication Date
ES325504A1 true ES325504A1 (es) 1967-02-16

Family

ID=23780562

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0325504A Expired ES325504A1 (es) 1965-04-15 1966-04-13 Un dispositivo semiconductor de efecto de campo de puerta aislada.

Country Status (6)

Country Link
US (1) US3355637A (OSRAM)
JP (1) JPS497390B1 (OSRAM)
DE (1) DE1564524A1 (OSRAM)
ES (1) ES325504A1 (OSRAM)
GB (1) GB1134656A (OSRAM)
NL (1) NL6605087A (OSRAM)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
BE756782A (fr) * 1969-10-03 1971-03-01 Western Electric Co Organe de memoire ayant une structure comportant deux couches isolantesentre un semiconducteur et une couche de metal
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US4032950A (en) * 1974-12-06 1977-06-28 Hughes Aircraft Company Liquid phase epitaxial process for growing semi-insulating gaas layers
DE3174485D1 (en) * 1980-12-23 1986-05-28 Nat Res Dev Field effect transistors
GB9116341D0 (en) * 1991-07-29 1991-09-11 Hitachi Europ Ltd Lt-gaas semiconductor device
US6949443B2 (en) * 2003-10-10 2005-09-27 Taiwan Semiconductor Manufacturing Company High performance semiconductor devices fabricated with strain-induced processes and methods for making same
JP6290342B1 (ja) 2016-09-07 2018-03-07 Ntn株式会社 左右輪駆動装置の制御装置
JP6328721B2 (ja) 2016-10-12 2018-05-23 Ntn株式会社 駆動源制御装置およびこの駆動源制御装置を備えた車両
CN114502414B (zh) 2019-10-16 2023-10-13 三菱自动车工业株式会社 电动车辆的电机控制装置
WO2021132466A1 (ja) 2019-12-24 2021-07-01 テイ・エス テック株式会社 乗物用シート
JP1693553S (OSRAM) * 2021-04-09 2021-08-23
JP1693552S (OSRAM) * 2021-04-09 2021-08-23

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3263095A (en) * 1963-12-26 1966-07-26 Ibm Heterojunction surface channel transistors

Also Published As

Publication number Publication date
GB1134656A (en) 1968-11-27
DE1564524B2 (OSRAM) 1970-11-12
DE1564524A1 (de) 1970-01-22
US3355637A (en) 1967-11-28
NL6605087A (OSRAM) 1966-10-17
JPS497390B1 (OSRAM) 1974-02-20

Similar Documents

Publication Publication Date Title
ES325504A1 (es) Un dispositivo semiconductor de efecto de campo de puerta aislada.
MY7300388A (en) High voltage transient protection for an insulated gate field effect transistor
ES328172A1 (es) Un dispositivo semiconductor compuesto.
MY7300228A (en) Transistor circuits
ES315030A1 (es) Un dispositivo semiconductor de efecto de campo de portal aislado.
FR1463352A (fr) Transistor à effet de champ à semi-conducteur en oxyde métallique
AT267227B (de) Gatter
IL24337A (en) Machine for closing and separating packages
CH439152A (de) Zettelgatter
FR1491166A (fr) Transistor à effet de champ, et à porte isolée
FR1478369A (fr) Vanne à tiroir
Lin Linear circuit techniques for insulated gate integrated field-effect devices.
FR1483688A (fr) Transistor à effet de champ
CH442170A (de) Zettelgatter
AU414187B2 (en) Transistor deflection circuits
FR1466541A (fr) Commutateur électronique à transistors
NL149326B (nl) Hoogspanningstransistor.
AU405138B2 (en) Metallic member for semiconductor devices
CA717681A (en) Semiconductor material
AU332066A (en) Transistor deflection circuits
CA708286A (en) Unilateralization device for transistor circuits
AU1034266A (en) Metallic member for semiconductor devices
CA715728A (en) Transistor circuit for switching high currents
CA712260A (en) Gate control circuit
CA710981A (en) Transistor encapsulation