ES313525A1 - Un dispositivo transistor de efecto de campo de barrera aislada. - Google Patents

Un dispositivo transistor de efecto de campo de barrera aislada.

Info

Publication number
ES313525A1
ES313525A1 ES0313525A ES313525A ES313525A1 ES 313525 A1 ES313525 A1 ES 313525A1 ES 0313525 A ES0313525 A ES 0313525A ES 313525 A ES313525 A ES 313525A ES 313525 A1 ES313525 A1 ES 313525A1
Authority
ES
Spain
Prior art keywords
effect transistor
transistor device
field effect
barrier field
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0313525A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES313525A1 publication Critical patent/ES313525A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator

Landscapes

  • Junction Field-Effect Transistors (AREA)
ES0313525A 1964-06-01 1965-05-29 Un dispositivo transistor de efecto de campo de barrera aislada. Expired ES313525A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US371674A US3374407A (en) 1964-06-01 1964-06-01 Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic

Publications (1)

Publication Number Publication Date
ES313525A1 true ES313525A1 (es) 1966-03-01

Family

ID=23464952

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0313525A Expired ES313525A1 (es) 1964-06-01 1965-05-29 Un dispositivo transistor de efecto de campo de barrera aislada.

Country Status (6)

Country Link
US (1) US3374407A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1514350B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES313525A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1113211A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6506853A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE336626B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE666834A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1964-07-13
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US4017883A (en) * 1971-07-06 1977-04-12 Ibm Corporation Single-electrode charge-coupled random access memory cell with impurity implanted gate region
DE2338388C2 (de) * 1973-07-28 1982-04-15 Ibm Deutschland Gmbh, 7000 Stuttgart Feldeffekt-Halbleiteranordnung
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
NL8303834A (nl) * 1983-11-08 1985-06-03 Philips Nv Halfgeleiderinrichting.
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
DE19719165A1 (de) * 1997-05-06 1998-11-12 Siemens Ag Halbleiterbauelement
SE518797C2 (sv) * 2000-07-19 2002-11-19 Ericsson Telefon Ab L M Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar
US9487885B2 (en) 2012-06-14 2016-11-08 Tivra Corporation Substrate structures and methods
WO2013188574A2 (en) * 2012-06-14 2013-12-19 Tivra Corporation Multilayer substrate structure and method and system of manufacturing the same
US9879357B2 (en) 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
US8765609B2 (en) 2012-07-25 2014-07-01 Power Integrations, Inc. Deposit/etch for tapered oxide
US9711616B2 (en) * 2014-12-23 2017-07-18 Northrop Grumman Systems Corporation Dual-channel field effect transistor device having increased amplifier linearity
CN115117157B (zh) * 2022-07-04 2025-09-02 杭州电子科技大学 一种GaN基HFETs器件及其栅下应变调控方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
NL265382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-03-08
NL132570C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1963-03-07
US3260948A (en) * 1963-04-19 1966-07-12 Rca Corp Field-effect transistor translating circuit
DE1249933B (de) * 1963-07-19 1967-09-14 Radio Corporation of America, New York, NY (V St A) Schaltungsanordnung zum Verstar ken elektrischer Signale mit Feldeffekttran sistoren, die eine isolierte Steuerelektrode enthalten

Also Published As

Publication number Publication date
NL6506853A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1965-12-02
SE336626B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-07-12
GB1113211A (en) 1968-05-08
US3374407A (en) 1968-03-19
DE1514350B1 (de) 1970-06-04

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