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Koninklijke Philips NV
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Philips Gloeilampenfabrieken NV
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Publication date
Application filed by Philips Gloeilampenfabrieken NVfiledCriticalPhilips Gloeilampenfabrieken NV
Publication of ES296318A1publicationCriticalpatent/ES296318A1/en
Method of manufacturing a semiconductor device comprising a semiconductor body, preferably of germanium or silicon, having a conducting layer of the type p recrystallized from an alloyed contact material, locally present on one side of the body, said recrystallized layer being located at least on the surface of the body, adjacent to a conductive layer of the n type obtained by diffusion of a donor in the body, characterized in that the donor is diffused in the semiconductor body at least in a considerable proportion, while a molten alloy of a contact material containing an acceptor is locally present on the surface of the body, said alloy being capable of absorbing a quantity of donor so large that diffusion of the donor from the front of the melt to the underlying body is delayed or blocked at least in a considerable proportion compared to the simultaneous diffusion of giver body portion located adjacent to the melt. (Machine-translation by Google Translate, not legally binding)
ES0296318A1963-03-291964-02-11A method of manufacturing a semiconductor device (Machine-translation by Google Translate, not legally binding)
ExpiredES296318A1
(en)
A method of producing a region of electrical characteristics altered in a first semiconductor oblea. (Machine-translation by Google Translate, not legally binding)