ES2644268T3 - Process for filling contact grooves in microelectronics - Google Patents

Process for filling contact grooves in microelectronics Download PDF

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Publication number
ES2644268T3
ES2644268T3 ES12703929.5T ES12703929T ES2644268T3 ES 2644268 T3 ES2644268 T3 ES 2644268T3 ES 12703929 T ES12703929 T ES 12703929T ES 2644268 T3 ES2644268 T3 ES 2644268T3
Authority
ES
Spain
Prior art keywords
microelectronics
contact grooves
filling contact
filling
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES12703929.5T
Other languages
Spanish (es)
Inventor
Thomas B. Richardson
Joseph A. Abys
Wenbo Shao
Chen Wang
Jr. Vincent Paneccasio
Cai Wang
Xuan Lin
Theodore Antonellis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MacDermid Enthone Inc
Original Assignee
MacDermid Enthone Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MacDermid Enthone Inc filed Critical MacDermid Enthone Inc
Application granted granted Critical
Publication of ES2644268T3 publication Critical patent/ES2644268T3/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Coating Apparatus (AREA)

Description

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Claims (1)

imagen1image 1 imagen2image2
ES12703929.5T 2011-01-26 2012-01-26 Process for filling contact grooves in microelectronics Active ES2644268T3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161436569P 2011-01-26 2011-01-26
US201161436569P 2011-01-26
PCT/US2012/022758 WO2012103357A1 (en) 2011-01-26 2012-01-26 Process for filling vias in the microelectronics

Publications (1)

Publication Number Publication Date
ES2644268T3 true ES2644268T3 (en) 2017-11-28

Family

ID=45592815

Family Applications (1)

Application Number Title Priority Date Filing Date
ES12703929.5T Active ES2644268T3 (en) 2011-01-26 2012-01-26 Process for filling contact grooves in microelectronics

Country Status (7)

Country Link
US (2) US10541140B2 (en)
EP (1) EP2668317B1 (en)
JP (1) JP5981455B2 (en)
KR (1) KR101817823B1 (en)
CN (1) CN103492617B (en)
ES (1) ES2644268T3 (en)
WO (1) WO2012103357A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2668317B1 (en) 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics
CN103361694A (en) * 2013-08-08 2013-10-23 上海新阳半导体材料股份有限公司 Micro-pore electroplated copper filling method for three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology
EP2865787A1 (en) 2013-10-22 2015-04-29 ATOTECH Deutschland GmbH Copper electroplating method
US10147510B1 (en) * 2013-11-15 2018-12-04 National Technology & Engineering Solutions Of Sandia, Llc Electroplated AU for conformal coating of high aspect ratio silicon structures
US20150233008A1 (en) * 2014-02-13 2015-08-20 Skyworks Solutions, Inc. Apparatus and methods related to copper plating of wafers
US9809891B2 (en) 2014-06-30 2017-11-07 Rohm And Haas Electronic Materials Llc Plating method
WO2017004424A1 (en) * 2015-06-30 2017-01-05 Enthone Inc. Cobalt filling of interconnects in microelectronics
CN105441994B (en) * 2015-12-30 2017-09-19 上海新阳半导体材料股份有限公司 A kind of electroplating liquid composition that can be used to improve salient point coplanarity
US10519557B2 (en) 2016-02-12 2019-12-31 Macdermid Enthone Inc. Leveler compositions for use in copper deposition in manufacture of microelectronics
JP6573575B2 (en) * 2016-05-02 2019-09-11 東京エレクトロン株式会社 Method of embedding recess
US9793156B1 (en) * 2016-09-12 2017-10-17 International Business Machines Corporation Self-aligned low resistance metallic interconnect structures
CN114420633A (en) * 2016-09-22 2022-04-29 麦克德米德乐思公司 Copper deposition in wafer level packaging of integrated circuits
EP3360988B1 (en) * 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
US10103056B2 (en) * 2017-03-08 2018-10-16 Lam Research Corporation Methods for wet metal seed deposition for bottom up gapfill of features
US10508348B2 (en) * 2017-06-15 2019-12-17 Rohm And Haas Electronic Materials Llc Environmentally friendly nickel electroplating compositions and methods
US10458032B2 (en) * 2017-06-15 2019-10-29 Rohm And Haas Electronic Materials Llc Environmentally friendly nickel electroplating compositions and methods
JP6904195B2 (en) * 2017-09-22 2021-07-14 住友金属鉱山株式会社 Flexible wiring board and its manufacturing method
JP6904194B2 (en) * 2017-09-22 2021-07-14 住友金属鉱山株式会社 Laminated body for wiring board and its manufacturing method
CN109244053B (en) * 2018-09-17 2020-04-14 上海交通大学 Composite structure for improving thermal mechanical reliability of TSV and manufacturing method thereof
US11823896B2 (en) * 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
KR20210000514A (en) * 2019-06-25 2021-01-05 삼성전기주식회사 Plating method for printed circuit board and printed circuit board
KR20210079767A (en) 2019-12-20 2021-06-30 삼성전자주식회사 Method of forming material layer, integrated circuit device and method of manufacturing integrated circuit device
WO2021142357A1 (en) * 2020-01-10 2021-07-15 Lam Research Corporation Tsv process window and fill performance enhancement by long pulsing and ramping

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JPH04187793A (en) 1990-11-20 1992-07-06 Fujitsu Ltd Semiconductor device and its production
AU5715594A (en) 1992-12-22 1994-07-19 K.I Chemical Research Center Polycationic polymer and polycationic bactericidal/algicidal agent
US6024856A (en) 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6946065B1 (en) * 1998-10-26 2005-09-20 Novellus Systems, Inc. Process for electroplating metal into microscopic recessed features
CA2359473A1 (en) 1999-01-21 2000-07-27 Atotech Deutschland Gmbh Method for electrolytically forming conductor structures from highly pure copper when producing integrated circuits
US6773893B1 (en) 2000-04-28 2004-08-10 The Trustees Of Columbia University In The City Of New York Human ABC1 promoter and assays based thereon
US6776893B1 (en) 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
US6432821B1 (en) * 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating
JP4148895B2 (en) * 2001-10-16 2008-09-10 新光電気工業株式会社 Hole copper plating method
US7316772B2 (en) 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
DE10311575B4 (en) 2003-03-10 2007-03-22 Atotech Deutschland Gmbh Process for the electrolytic metallization of workpieces with high aspect ratio holes
GB2418067B (en) * 2003-04-28 2007-02-14 Advanced Micro Devices Inc Method of electroplating copper over a patterned dielectric layer to enhance process uniformity of a subsequent CMP process
EP1553625B1 (en) * 2004-01-12 2014-05-07 Infineon Technologies AG Method for fabrication of a contact structure
DE602005022650D1 (en) * 2004-04-26 2010-09-16 Rohm & Haas Elect Mat Improved plating process
TWI400365B (en) 2004-11-12 2013-07-01 Enthone Copper electrodeposition in microelectronics
ATE484943T1 (en) 2006-03-30 2010-10-15 Atotech Deutschland Gmbh ELECTROLYTIC PROCESS FOR FILLING HOLES AND RECESSES WITH METALS
US20080006850A1 (en) 2006-07-10 2008-01-10 Innovative Micro Technology System and method for forming through wafer vias using reverse pulse plating
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP5484691B2 (en) 2008-05-27 2014-05-07 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method and semiconductor device
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EP2668317B1 (en) 2011-01-26 2017-08-23 MacDermid Enthone Inc. Process for filling vias in the microelectronics

Also Published As

Publication number Publication date
US10103029B2 (en) 2018-10-16
EP2668317A1 (en) 2013-12-04
CN103492617B (en) 2017-04-19
US10541140B2 (en) 2020-01-21
JP5981455B2 (en) 2016-08-31
KR101817823B1 (en) 2018-02-21
CN103492617A (en) 2014-01-01
EP2668317B1 (en) 2017-08-23
US20160254156A1 (en) 2016-09-01
US20140120722A1 (en) 2014-05-01
JP2014508859A (en) 2014-04-10
WO2012103357A1 (en) 2012-08-02
KR20140008517A (en) 2014-01-21

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