ES261609A1 - Metodo para el tratamiento de un sëlido, mas en particular un material semiconductor - Google Patents

Metodo para el tratamiento de un sëlido, mas en particular un material semiconductor

Info

Publication number
ES261609A1
ES261609A1 ES0261609A ES261609A ES261609A1 ES 261609 A1 ES261609 A1 ES 261609A1 ES 0261609 A ES0261609 A ES 0261609A ES 261609 A ES261609 A ES 261609A ES 261609 A1 ES261609 A1 ES 261609A1
Authority
ES
Spain
Prior art keywords
substance
zone
assembly
relating
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0261609A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES261609A1 publication Critical patent/ES261609A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES0261609A 1959-10-13 1960-10-10 Metodo para el tratamiento de un sëlido, mas en particular un material semiconductor Expired ES261609A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244298 1959-10-13

Publications (1)

Publication Number Publication Date
ES261609A1 true ES261609A1 (es) 1960-12-01

Family

ID=19751976

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0261609A Expired ES261609A1 (es) 1959-10-13 1960-10-10 Metodo para el tratamiento de un sëlido, mas en particular un material semiconductor

Country Status (6)

Country Link
CH (1) CH442236A (enExample)
DE (1) DE1240816B (enExample)
ES (1) ES261609A1 (enExample)
FR (1) FR1270317A (enExample)
GB (1) GB962166A (enExample)
NL (1) NL244298A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (de) * 1962-11-15 1968-01-11 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung durch einkristallines Aufwachsen halbleitender Schichten mittels Transportreaktion
KR100599428B1 (ko) * 2000-03-23 2006-07-12 신닛테츠가가쿠 가부시키가이샤 승화 정제 방법 및 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (enExample) * 1951-03-07 1900-01-01
NL168491B (enExample) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen

Also Published As

Publication number Publication date
FR1270317A (fr) 1961-08-25
NL244298A (enExample)
DE1240816B (de) 1967-05-24
CH442236A (de) 1967-08-31
GB962166A (en) 1964-07-01

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