ES2578629T3 - Procedimiento de síntesis mejorado de nanotubos de carbono sobre multisoportes - Google Patents
Procedimiento de síntesis mejorado de nanotubos de carbono sobre multisoportes Download PDFInfo
- Publication number
- ES2578629T3 ES2578629T3 ES12810373.6T ES12810373T ES2578629T3 ES 2578629 T3 ES2578629 T3 ES 2578629T3 ES 12810373 T ES12810373 T ES 12810373T ES 2578629 T3 ES2578629 T3 ES 2578629T3
- Authority
- ES
- Spain
- Prior art keywords
- mixture
- fibers
- particles
- ntc
- articles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 239000002041 carbon nanotube Substances 0.000 title abstract 2
- 229910021393 carbon nanotube Inorganic materials 0.000 title abstract 2
- 238000003786 synthesis reaction Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 7
- 239000000203 mixture Substances 0.000 abstract 7
- 239000000835 fiber Substances 0.000 abstract 6
- 239000002245 particle Substances 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 150000001247 metal acetylides Chemical class 0.000 abstract 3
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000003054 catalyst Substances 0.000 abstract 2
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 abstract 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011874 heated mixture Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 238000011084 recovery Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000008096 xylene Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/164—Preparation involving continuous processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/443—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds
- H01B3/445—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds from vinylfluorides or other fluoroethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/22—Electronic properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/26—Mechanical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]
- Y10T428/292—In coating or impregnation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1161344 | 2011-12-08 | ||
| FR1161344A FR2983846B1 (fr) | 2011-12-08 | 2011-12-08 | Procede de synthese ameliore de nanotubes de carbone sur multi-supports |
| PCT/FR2012/052840 WO2013083931A1 (fr) | 2011-12-08 | 2012-12-07 | Procédé de synthèse amélioré de nanotubes de carbone sur multi-supports |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2578629T3 true ES2578629T3 (es) | 2016-07-28 |
Family
ID=47505235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES12810373.6T Active ES2578629T3 (es) | 2011-12-08 | 2012-12-07 | Procedimiento de síntesis mejorado de nanotubos de carbono sobre multisoportes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9779850B2 (enExample) |
| EP (1) | EP2788288B1 (enExample) |
| JP (1) | JP6422779B2 (enExample) |
| ES (1) | ES2578629T3 (enExample) |
| FR (1) | FR2983846B1 (enExample) |
| WO (1) | WO2013083931A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9987608B2 (en) | 2014-09-19 | 2018-06-05 | NanoSynthesis Plus, Ltd. | Methods and apparatuses for producing dispersed nanostructures |
| CN105347326B (zh) * | 2015-11-19 | 2017-07-28 | 南昌大学 | 一种碳纳米葫芦结构材料的制备方法 |
| JP6688932B1 (ja) * | 2019-08-21 | 2020-04-28 | Ｄ−Ｐｏｗｅｒ株式会社 | カーボンナノチューブ（ｃｎｔ）製造に使用する材料の供給装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7189430B2 (en) * | 2002-02-11 | 2007-03-13 | Rensselaer Polytechnic Institute | Directed assembly of highly-organized carbon nanotube architectures |
| US7981396B2 (en) * | 2003-12-03 | 2011-07-19 | Honda Motor Co., Ltd. | Methods for production of carbon nanostructures |
| US20070189953A1 (en) | 2004-01-30 | 2007-08-16 | Centre National De La Recherche Scientifique (Cnrs) | Method for obtaining carbon nanotubes on supports and composites comprising same |
| FR2927619B1 (fr) * | 2008-02-20 | 2011-01-14 | Commissariat Energie Atomique | Croissance de nanotubes de carbone sur substrats de carbone ou metalliques. |
| FR2939422B1 (fr) * | 2008-12-08 | 2011-05-06 | Centre Nat Rech Scient | Procede de synthese de nanotubes de carbone sur materiaux micrometriques longs et particulaires |
-
2011
- 2011-12-08 FR FR1161344A patent/FR2983846B1/fr active Active
-
2012
- 2012-12-07 WO PCT/FR2012/052840 patent/WO2013083931A1/fr not_active Ceased
- 2012-12-07 JP JP2014545337A patent/JP6422779B2/ja active Active
- 2012-12-07 ES ES12810373.6T patent/ES2578629T3/es active Active
- 2012-12-07 EP EP12810373.6A patent/EP2788288B1/fr active Active
- 2012-12-07 US US14/363,826 patent/US9779850B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2788288A1 (fr) | 2014-10-15 |
| EP2788288B1 (fr) | 2016-05-04 |
| JP2015507593A (ja) | 2015-03-12 |
| US20140343210A1 (en) | 2014-11-20 |
| US9779850B2 (en) | 2017-10-03 |
| WO2013083931A1 (fr) | 2013-06-13 |
| FR2983846A1 (fr) | 2013-06-14 |
| FR2983846B1 (fr) | 2014-01-31 |
| JP6422779B2 (ja) | 2018-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5839571B2 (ja) | 窒素原子がドープされたグラフェンフィルムを製造する方法 | |
| JP5407921B2 (ja) | グラフェン膜の製造方法 | |
| Xiang et al. | Acetylene-accelerated alcohol catalytic chemical vapor deposition growth of vertically aligned single-walled carbon nanotubes | |
| EP2340114A4 (en) | CARRIER CATALYZER FOR SYNTHESIS OF CARBON NANOTUBES, METHOD OF MANUFACTURING THEREOF AND CARBON NANOROES USING THEREOF | |
| ES2578629T3 (es) | Procedimiento de síntesis mejorado de nanotubos de carbono sobre multisoportes | |
| PE20110129A1 (es) | Procesos para convertir alcanos gaseosos en hidrocarburos liquidos | |
| GB2516372A (en) | High quality large scale single and multilayer graphene production by chemical vapor deposition | |
| AR079491A1 (es) | Metodos de sintesis de inhibidores del factor xa tal como el betrixaban y composiciones farmaceuticas que contienen la base libre de betrixaban o su sal sustancialmente pura. | |
| JP2009509338A5 (enExample) | ||
| EA200870558A1 (ru) | Способы получения стержней поликристаллического кремния высокой степени чистоты с использованием металлического средства-основы | |
| ATE544158T1 (de) | Kernbrennstoffmantelung mit hoher wärmeleitfähigkeit und prozess zu ihrer herstellung | |
| EA201100568A1 (ru) | Способ получения карбида кремния высокой чистоты из углеводородов и оксида кремния с помощью прокаливания | |
| CN104495814B (zh) | 一种插层式制备石墨烯的方法 | |
| EA201070910A1 (ru) | Способ и устройство для конверсии углеродсодержащего сырья | |
| MY156300A (en) | A chemical vapour deposition system and process | |
| RU2011133919A (ru) | Процесс получения поликристаллического кремния | |
| GB0509499D0 (en) | Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach | |
| Li et al. | Large-scale fabrication of high-performing single-crystal SiC nanowire sponges using natural loofah | |
| Liu et al. | Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow | |
| GB2476916A (en) | A process for producing carbon nanotubes (CNTs) | |
| JP2007191840A5 (enExample) | ||
| JP2011078946A5 (enExample) | ||
| RU2013119091A (ru) | Способ изготовления изделий из композиционного материала | |
| RU2012142223A (ru) | Пространственно-затрудненные амины | |
| JP2007045816A5 (ja) | カルバゾール誘導体、発光素子用材料として用いられるアントラセン誘導体の作製方法 |