ES253851A1 - Aparato repetidor semiconductor - Google Patents

Aparato repetidor semiconductor

Info

Publication number
ES253851A1
ES253851A1 ES0253851A ES253851A ES253851A1 ES 253851 A1 ES253851 A1 ES 253851A1 ES 0253851 A ES0253851 A ES 0253851A ES 253851 A ES253851 A ES 253851A ES 253851 A1 ES253851 A1 ES 253851A1
Authority
ES
Spain
Prior art keywords
repeater apparatus
zones
semiconductor
low resistance
resistance electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0253851A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES253851A1 publication Critical patent/ES253851A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/86—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of Schottky-barrier gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
ES0253851A 1958-12-11 1959-11-17 Aparato repetidor semiconductor Expired ES253851A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779593A US3061739A (en) 1958-12-11 1958-12-11 Multiple channel field effect semiconductor

Publications (1)

Publication Number Publication Date
ES253851A1 true ES253851A1 (es) 1960-03-01

Family

ID=25116917

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0253851A Expired ES253851A1 (es) 1958-12-11 1959-11-17 Aparato repetidor semiconductor

Country Status (8)

Country Link
US (1) US3061739A (en, 2012)
BE (1) BE584466A (en, 2012)
CH (1) CH397868A (en, 2012)
DE (1) DE1152185B (en, 2012)
ES (1) ES253851A1 (en, 2012)
FR (1) FR1242628A (en, 2012)
GB (1) GB941368A (en, 2012)
NL (1) NL245195A (en, 2012)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210696A (en) * 1961-02-10 1965-10-05 Westinghouse Electric Corp Bridged-t filter
US3187606A (en) * 1961-06-05 1965-06-08 Burroughs Corp Fabricating tool and technique
US3192398A (en) * 1961-07-31 1965-06-29 Merck & Co Inc Composite semiconductor delay line device
US3122655A (en) * 1961-12-27 1964-02-25 James J Murray Solid state reactive phase lagging device
US3255360A (en) * 1962-03-30 1966-06-07 Research Corp Field-effect negative resistor
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
NL299194A (en, 2012) * 1962-10-15
NL299821A (en, 2012) * 1962-10-31 1900-01-01
US3173102A (en) * 1962-12-06 1965-03-09 Jr Walter Loewenstern Solid state multiple stream travelling wave amplifier
NL301882A (en, 2012) * 1962-12-17
US3149765A (en) * 1963-05-28 1964-09-22 Western Electric Co Apparatus for removing waffrs from semiconductor slices
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
US3292129A (en) * 1963-10-07 1966-12-13 Grace W R & Co Silicon thermistors
US3343114A (en) * 1963-12-30 1967-09-19 Texas Instruments Inc Temperature transducer
US3340490A (en) * 1965-10-21 1967-09-05 Texas Instruments Inc Thermistor
US4364021A (en) * 1977-10-07 1982-12-14 General Electric Company Low voltage varistor configuration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL79529C (en, 2012) * 1948-09-24
NL154165C (en, 2012) * 1949-10-11
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
DE1039646B (de) * 1953-10-19 1958-09-25 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mehreren UEbergaengen zwischen Zonen unterschiedlichen Leitungstyps
BE552928A (en, 2012) * 1957-03-18

Also Published As

Publication number Publication date
GB941368A (en) 1963-11-13
FR1242628A (fr) 1960-09-30
NL245195A (en, 2012)
DE1152185B (de) 1963-08-01
US3061739A (en) 1962-10-30
BE584466A (fr) 1960-03-01
CH397868A (fr) 1965-08-31

Similar Documents

Publication Publication Date Title
ES253851A1 (es) Aparato repetidor semiconductor
ES397416A1 (es) Un dispositivo semiconductor.
DE1498600B1 (de) Selbstabdichtender, durchstechbarer Stöpsel aus elastomerem Material
OA01146A (fr) Convertisseur de tension à transistors.
DK117722B (da) Halvlederkomponent med mindst to felteffekttransistorer ned isoleret styreelektrode.
CH417655A (de) Wärmeempfindliches Kopiermaterial
AT253565B (de) Schaltungsanordnung mit Feldeffekttransistor
ES321146A1 (es) Un dispositivo semiconductor.
ES402165A1 (es) Un dispositivo semiconductor monolitico.
AT315240B (de) Feldeffekttransistor mit isolierter Torelektrode
ES294527A1 (es) Un dispositivo transistor de efecto de campo
CH365143A (de) Halbleiteranordnung mit vier Schichten von abwechselnd gegensätzlichem Leitfähigkeitstyp
FR1230061A (fr) Circuits électriques à transistors
AT336080B (de) Halbleiteranordnung mit wenigstens zwei feldeffektransistoren mit isolierter torelektrode
AT329115B (de) Halbleiteranordnung mit versenktem isoliermuster und an dieses grenzender dotierter zone
AT331859B (de) Feldeffekttransistor mit isolierter torelektrode
GB1058753A (en) Improvements relating to solid state devices
FR1355153A (fr) Matière luminescente perfectionnée, et appareils utilisant cette matière
ES213426A1 (es) Un dispositivo transistor
ES304054A1 (es) Dispositivo semiconductor
FR1426884A (fr) Perfectionnements à la technologie des transistors
BE770550A (fr) Agencement de diffusion de matieres de dopage dans des rondelles de matiere semiconductrice
FR1421553A (fr) Composition antifriction et ses applications
AT209384B (de) Halbleiteranordnung, insbesondere Transistor, mit dicht nebeneinanderliegenden Kontaktanschlüssen
ES459157A1 (es) Perfeccionamientos en aparatos multiplicadores de se/ales electricas.