ES2361212T8 - Procedimiento para preparar un electrodo transparente estable. - Google Patents

Procedimiento para preparar un electrodo transparente estable. Download PDF

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Publication number
ES2361212T8
ES2361212T8 ES08157959T ES08157959T ES2361212T8 ES 2361212 T8 ES2361212 T8 ES 2361212T8 ES 08157959 T ES08157959 T ES 08157959T ES 08157959 T ES08157959 T ES 08157959T ES 2361212 T8 ES2361212 T8 ES 2361212T8
Authority
ES
Spain
Prior art keywords
metal film
thin metal
prepare
procedure
ultra thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES08157959T
Other languages
English (en)
Other versions
ES2361212T3 (es
Inventor
Valerio Pruneri
Luis Martínez Montblanch
Stefano Giurgola
Paolo Vergani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institucio Catalana de Recerca i Estudis Avancats ICREA
Institut de Ciencies Fotoniques ICFO
Original Assignee
Institucio Catalana de Recerca i Estudis Avancats ICREA
Institut de Ciencies Fotoniques ICFO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institucio Catalana de Recerca i Estudis Avancats ICREA, Institut de Ciencies Fotoniques ICFO filed Critical Institucio Catalana de Recerca i Estudis Avancats ICREA
Application granted granted Critical
Publication of ES2361212T3 publication Critical patent/ES2361212T3/es
Publication of ES2361212T8 publication Critical patent/ES2361212T8/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Chemically Coating (AREA)
  • Liquid Crystal (AREA)
ES08157959T 2008-06-10 2008-06-10 Procedimiento para preparar un electrodo transparente estable. Active ES2361212T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP08157959A EP2133921B8 (en) 2008-06-10 2008-06-10 method to prepare a stable transparent electrode

Publications (2)

Publication Number Publication Date
ES2361212T3 ES2361212T3 (es) 2011-06-15
ES2361212T8 true ES2361212T8 (es) 2011-08-12

Family

ID=39929582

Family Applications (1)

Application Number Title Priority Date Filing Date
ES08157959T Active ES2361212T3 (es) 2008-06-10 2008-06-10 Procedimiento para preparar un electrodo transparente estable.

Country Status (8)

Country Link
US (1) US8623153B2 (es)
EP (1) EP2133921B8 (es)
KR (1) KR101621571B1 (es)
CN (1) CN102105989B (es)
AT (1) ATE498911T1 (es)
DE (1) DE602008005000D1 (es)
ES (1) ES2361212T3 (es)
WO (1) WO2009150169A1 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2581789B1 (en) 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
US9296183B2 (en) 2011-11-30 2016-03-29 Corning Incorporated Metal dewetting methods and articles produced thereby
US9023457B2 (en) 2011-11-30 2015-05-05 Corning Incorporated Textured surfaces and methods of making and using same
US20160002096A1 (en) 2014-07-02 2016-01-07 Corning Incorporated Silicon and silica nanostructures and method of making silicon and silica nanostructures
US9506890B2 (en) 2014-12-16 2016-11-29 Eastman Chemical Company Physical vapor deposited biosensor components
CN105449106B (zh) * 2015-12-28 2018-10-23 中国科学院重庆绿色智能技术研究院 一种基于超薄金属的透明电极及其制备方法
KR102451440B1 (ko) 2016-06-15 2022-10-05 이스트만 케미칼 컴파니 물리적 증착된 바이오센서 컴포넌트
JP7096816B2 (ja) 2016-09-16 2022-07-06 イーストマン ケミカル カンパニー 物理蒸着によって製造されるバイオセンサー電極
US11630075B2 (en) 2016-09-16 2023-04-18 Eastman Chemical Company Biosensor electrodes prepared by physical vapor deposition
EP3642605A1 (en) 2017-06-22 2020-04-29 Eastman Chemical Company Physical vapor deposited electrode for electrochemical sensors
KR102667756B1 (ko) 2021-10-18 2024-05-20 성균관대학교산학협력단 고분자 보호층을 포함하는 다층 투명 전극 및 이의 제조방법
CN116334546B (zh) * 2023-05-26 2023-10-20 江西兆驰半导体有限公司 一种电子束蒸镀超薄Ni金属的方法及倒装LED芯片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6602606B1 (en) * 1999-05-18 2003-08-05 Nippon Sheet Glass Co., Ltd. Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same
US6391724B1 (en) * 1999-12-24 2002-05-21 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric
JP4083396B2 (ja) * 2000-07-10 2008-04-30 独立行政法人科学技術振興機構 紫外透明導電膜とその製造方法
JP4403654B2 (ja) * 2000-11-16 2010-01-27 富士電機システムズ株式会社 薄膜太陽電池
US6696700B2 (en) * 2001-03-09 2004-02-24 National University Of Singapore P-type transparent copper-aluminum-oxide semiconductor
US6761986B2 (en) * 2001-04-06 2004-07-13 Rockwell Scientific Licensing, Llc Thin film infrared transparent conductor
KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지

Also Published As

Publication number Publication date
US20110114226A1 (en) 2011-05-19
US8623153B2 (en) 2014-01-07
WO2009150169A1 (en) 2009-12-17
DE602008005000D1 (de) 2011-03-31
KR101621571B1 (ko) 2016-05-16
ATE498911T1 (de) 2011-03-15
CN102105989B (zh) 2014-03-12
ES2361212T3 (es) 2011-06-15
EP2133921A1 (en) 2009-12-16
EP2133921B1 (en) 2011-02-16
CN102105989A (zh) 2011-06-22
KR20110046396A (ko) 2011-05-04
EP2133921B8 (en) 2011-10-05

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