ES2361212T8 - Procedimiento para preparar un electrodo transparente estable. - Google Patents
Procedimiento para preparar un electrodo transparente estable. Download PDFInfo
- Publication number
- ES2361212T8 ES2361212T8 ES08157959T ES08157959T ES2361212T8 ES 2361212 T8 ES2361212 T8 ES 2361212T8 ES 08157959 T ES08157959 T ES 08157959T ES 08157959 T ES08157959 T ES 08157959T ES 2361212 T8 ES2361212 T8 ES 2361212T8
- Authority
- ES
- Spain
- Prior art keywords
- metal film
- thin metal
- prepare
- procedure
- ultra thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Non-Insulated Conductors (AREA)
- Chemically Coating (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08157959A EP2133921B8 (en) | 2008-06-10 | 2008-06-10 | method to prepare a stable transparent electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES2361212T3 ES2361212T3 (es) | 2011-06-15 |
| ES2361212T8 true ES2361212T8 (es) | 2011-08-12 |
Family
ID=39929582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES08157959T Active ES2361212T3 (es) | 2008-06-10 | 2008-06-10 | Procedimiento para preparar un electrodo transparente estable. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8623153B2 (es) |
| EP (1) | EP2133921B8 (es) |
| KR (1) | KR101621571B1 (es) |
| CN (1) | CN102105989B (es) |
| AT (1) | ATE498911T1 (es) |
| DE (1) | DE602008005000D1 (es) |
| ES (1) | ES2361212T3 (es) |
| WO (1) | WO2009150169A1 (es) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2581789B1 (en) | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| US9296183B2 (en) | 2011-11-30 | 2016-03-29 | Corning Incorporated | Metal dewetting methods and articles produced thereby |
| US9023457B2 (en) | 2011-11-30 | 2015-05-05 | Corning Incorporated | Textured surfaces and methods of making and using same |
| US20160002096A1 (en) | 2014-07-02 | 2016-01-07 | Corning Incorporated | Silicon and silica nanostructures and method of making silicon and silica nanostructures |
| US9506890B2 (en) | 2014-12-16 | 2016-11-29 | Eastman Chemical Company | Physical vapor deposited biosensor components |
| CN105449106B (zh) * | 2015-12-28 | 2018-10-23 | 中国科学院重庆绿色智能技术研究院 | 一种基于超薄金属的透明电极及其制备方法 |
| KR102451440B1 (ko) | 2016-06-15 | 2022-10-05 | 이스트만 케미칼 컴파니 | 물리적 증착된 바이오센서 컴포넌트 |
| JP7096816B2 (ja) | 2016-09-16 | 2022-07-06 | イーストマン ケミカル カンパニー | 物理蒸着によって製造されるバイオセンサー電極 |
| US11630075B2 (en) | 2016-09-16 | 2023-04-18 | Eastman Chemical Company | Biosensor electrodes prepared by physical vapor deposition |
| EP3642605A1 (en) | 2017-06-22 | 2020-04-29 | Eastman Chemical Company | Physical vapor deposited electrode for electrochemical sensors |
| KR102667756B1 (ko) | 2021-10-18 | 2024-05-20 | 성균관대학교산학협력단 | 고분자 보호층을 포함하는 다층 투명 전극 및 이의 제조방법 |
| CN116334546B (zh) * | 2023-05-26 | 2023-10-20 | 江西兆驰半导体有限公司 | 一种电子束蒸镀超薄Ni金属的方法及倒装LED芯片 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602606B1 (en) * | 1999-05-18 | 2003-08-05 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same |
| US6391724B1 (en) * | 1999-12-24 | 2002-05-21 | Hyundai Electronics Industries Co., Ltd. | Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric |
| JP4083396B2 (ja) * | 2000-07-10 | 2008-04-30 | 独立行政法人科学技術振興機構 | 紫外透明導電膜とその製造方法 |
| JP4403654B2 (ja) * | 2000-11-16 | 2010-01-27 | 富士電機システムズ株式会社 | 薄膜太陽電池 |
| US6696700B2 (en) * | 2001-03-09 | 2004-02-24 | National University Of Singapore | P-type transparent copper-aluminum-oxide semiconductor |
| US6761986B2 (en) * | 2001-04-06 | 2004-07-13 | Rockwell Scientific Licensing, Llc | Thin film infrared transparent conductor |
| KR100505536B1 (ko) * | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스 |
| KR20060085465A (ko) * | 2005-01-24 | 2006-07-27 | 삼성전자주식회사 | 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지 |
-
2008
- 2008-06-10 EP EP08157959A patent/EP2133921B8/en not_active Not-in-force
- 2008-06-10 ES ES08157959T patent/ES2361212T3/es active Active
- 2008-06-10 AT AT08157959T patent/ATE498911T1/de not_active IP Right Cessation
- 2008-06-10 DE DE602008005000T patent/DE602008005000D1/de active Active
-
2009
- 2009-06-10 WO PCT/EP2009/057148 patent/WO2009150169A1/en active Application Filing
- 2009-06-10 KR KR1020107028959A patent/KR101621571B1/ko active IP Right Grant
- 2009-06-10 CN CN200980128591.8A patent/CN102105989B/zh not_active Expired - Fee Related
- 2009-06-10 US US12/997,011 patent/US8623153B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110114226A1 (en) | 2011-05-19 |
| US8623153B2 (en) | 2014-01-07 |
| WO2009150169A1 (en) | 2009-12-17 |
| DE602008005000D1 (de) | 2011-03-31 |
| KR101621571B1 (ko) | 2016-05-16 |
| ATE498911T1 (de) | 2011-03-15 |
| CN102105989B (zh) | 2014-03-12 |
| ES2361212T3 (es) | 2011-06-15 |
| EP2133921A1 (en) | 2009-12-16 |
| EP2133921B1 (en) | 2011-02-16 |
| CN102105989A (zh) | 2011-06-22 |
| KR20110046396A (ko) | 2011-05-04 |
| EP2133921B8 (en) | 2011-10-05 |
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