ES2130576T3 - Procedimiento y aparato de formacion de un gas excitado. - Google Patents

Procedimiento y aparato de formacion de un gas excitado.

Info

Publication number
ES2130576T3
ES2130576T3 ES95902837T ES95902837T ES2130576T3 ES 2130576 T3 ES2130576 T3 ES 2130576T3 ES 95902837 T ES95902837 T ES 95902837T ES 95902837 T ES95902837 T ES 95902837T ES 2130576 T3 ES2130576 T3 ES 2130576T3
Authority
ES
Spain
Prior art keywords
treatment
gaseous
mixture
excited
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95902837T
Other languages
English (en)
Inventor
Thierry Sindzingre
Stephane Rabia
Francois Coeuret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Original Assignee
Air Liquide SA
LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide SA, LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude filed Critical Air Liquide SA
Application granted granted Critical
Publication of ES2130576T3 publication Critical patent/ES2130576T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes

Abstract

LA INVENCION SE REFIERE A LA UTILIZACION, PARA FORMAR UN DEPOSITO DE UNA PELICULA QUE CONTIENE SILICIO SOBRE UN SUBSTRATO NO METALICO (1), DE AL MENOS UN APARATO CORRIENTE ABAJO (4) DE FORMACION DE ESPECIES GASEOSAS EXCITADAS O INESTABLES, EN EL QUE SE TRANSFORMA UNA MEZCLA GASEOSA INICIAL DE TRATAMIENTO (7), SIENDO EL APARATO EL ASIENTO DE UNA DESCARGA ELECTRICA CREADA ENTRE UN PRIMER ELECTRODO (14) Y UN SEGUNDO ELECTRODO (17), QUE SE EXTIENDEN SEGUN UNA DIRECCION PRINCIPAL ALARGADA, ATRAVESANDO LA MEZCLA GASEOSA INICIAL DE TRATAMIENTO LA DESCARGA TRANSVERSALMENTE A LOS ELECTRODOS Y A ESTA DIRECCION PRINCIPAL, LA MEZCLA GASEOSA PRIMARIA DE TRATAMIENTO (8) QUE SE OBTIENE A LA SALIDA (6) DE GASES DE DICHO APARATO, QUE COMPRENDE ESPECIES GASEOSAS EXCITADAS O INESTABLES Y QUE ESTA SUSTANCIALMENTE DESPROVISTO DE ESPECIES ELECTRICAMENTE CARGADAS, FORMANDO CON UNA MEZCLA GASEOSA ADYACENTE DE TRATAMIENTO (9,10) QUE COMPRENDE AL MENOS UN PRECURSOR GASEOSO DE SILICIO Y QUE NO HA TRANSITADO POR DICHOAPARATO, LA ATMOSFERA GASEOSA DE TRATAMIENTO (30) QUE SE PONE EN CONTACTO CON EL SUBSTRATO PARA REALIZAR EL DEPOSITO.
ES95902837T 1993-12-15 1994-12-07 Procedimiento y aparato de formacion de un gas excitado. Expired - Lifetime ES2130576T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9315111A FR2713667B1 (fr) 1993-12-15 1993-12-15 Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat non métallique.

Publications (1)

Publication Number Publication Date
ES2130576T3 true ES2130576T3 (es) 1999-07-01

Family

ID=9453985

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95902837T Expired - Lifetime ES2130576T3 (es) 1993-12-15 1994-12-07 Procedimiento y aparato de formacion de un gas excitado.

Country Status (8)

Country Link
US (1) US5807614A (es)
EP (1) EP0734461B1 (es)
JP (1) JPH09506671A (es)
DE (1) DE69418058T2 (es)
DK (1) DK0734461T3 (es)
ES (1) ES2130576T3 (es)
FR (1) FR2713667B1 (es)
WO (1) WO1995016801A1 (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US6365235B2 (en) * 1995-11-13 2002-04-02 Tepla Ag Surface treatment method and device therefor
US5861190A (en) * 1996-03-25 1999-01-19 Hewlett-Packard Co. Arrangement for growing a thin dielectric layer on a semiconductor wafer at low temperatures
US5900317A (en) * 1996-09-13 1999-05-04 Minnesota Mining & Manufacturing Company Flame-treating process
US6110544A (en) * 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
US6194036B1 (en) * 1997-10-20 2001-02-27 The Regents Of The University Of California Deposition of coatings using an atmospheric pressure plasma jet
FR2789698B1 (fr) * 1999-02-11 2002-03-29 Air Liquide Procede et installation pour former un depot d'une couche sur un substrat
DE29919142U1 (de) * 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik G Plasmadüse
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6896968B2 (en) * 2001-04-06 2005-05-24 Honeywell International Inc. Coatings and method for protecting carbon-containing components from oxidation
US6776330B2 (en) 2001-09-10 2004-08-17 Air Products And Chemicals, Inc. Hydrogen fluxless soldering by electron attachment
US7387738B2 (en) * 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7079370B2 (en) * 2003-04-28 2006-07-18 Air Products And Chemicals, Inc. Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US20050221618A1 (en) * 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
US7434719B2 (en) * 2005-12-09 2008-10-14 Air Products And Chemicals, Inc. Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment
TW200814170A (en) * 2006-09-13 2008-03-16 Ind Tech Res Inst Method of adjusting surface characteristic of a substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774062A (en) * 1987-01-13 1988-09-27 Alten Corporation Corona discharge ozonator
JPH02148715A (ja) * 1988-11-29 1990-06-07 Canon Inc 半導体デバイスの連続形成装置
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
JP3063769B2 (ja) * 1990-07-17 2000-07-12 イーシー化学株式会社 大気圧プラズマ表面処理法
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルｃｖｄ法による高速成膜方法
FR2692730B1 (fr) * 1992-06-19 1994-08-19 Air Liquide Dispositif de formation de molécules gazeuses excitées ou instables et utilisations d'un tel dispositif.

Also Published As

Publication number Publication date
FR2713667B1 (fr) 1996-01-12
DE69418058T2 (de) 1999-09-02
EP0734461B1 (fr) 1999-04-21
US5807614A (en) 1998-09-15
EP0734461A1 (fr) 1996-10-02
DK0734461T3 (da) 1999-05-31
FR2713667A1 (fr) 1995-06-16
DE69418058D1 (de) 1999-05-27
WO1995016801A1 (fr) 1995-06-22
JPH09506671A (ja) 1997-06-30

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