ES2110397T3 - Circuito integrado con enlace de cubetas. - Google Patents

Circuito integrado con enlace de cubetas.

Info

Publication number
ES2110397T3
ES2110397T3 ES88305407T ES88305407T ES2110397T3 ES 2110397 T3 ES2110397 T3 ES 2110397T3 ES 88305407 T ES88305407 T ES 88305407T ES 88305407 T ES88305407 T ES 88305407T ES 2110397 T3 ES2110397 T3 ES 2110397T3
Authority
ES
Spain
Prior art keywords
source
silicide
cubet
connect
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88305407T
Other languages
English (en)
Inventor
Min-Liang Chen
Chung Wai Leung
Daniel Mark Wroge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2110397T3 publication Critical patent/ES2110397T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

CUANDO SE FABRICAN CIRCUITOS LOGICOS CMOS, POR EJEMPLO UN INVERSOR, ES CON FRECUENCIA NECESARIO CONECTAR LAS FUENTES DE LOS TRANSISTORES DE LOS CANALES P Y N A SUS CUBETAS RESPECTIVAS (N Y P, RESPECTIVAMENTE). LA TECNICA ANTERIOR EXIGIA BIEN UNA GRAN VENTANA DE CONTACTO CUBRIENDO TANTO LA FUENTE COMO LAS CUBETAS O BIEN DOS VENTANAS DE CONTACTO DE TAMAÑO ESTANDAR. LA TECNICA DESCRITA AQUI FORMA LA CONEXION UTILIZANDO LA MISMA CAPA DE SILICIURO (106,107,112,116) QUE SE FORMA EN LAS REGIONES FUENTE/DESCARGA, LA CUAL TAMBIEN FORMA UN SILICIURO DE PUERTA (108,117) EN EL PROCESO DE SILICIURO AUTOALINEADO. ASI, PUEDE EMPLEARSE UNA VENTANA CONVENCIONAL PARA CONECTAR LA UNION DE SILICIURO DE LA CUBETA (Y, POR LO TANTO, LAS REGIONES FUENTE/CUBETA) A UN CONDUCTO DE SUMINISTRO DE CORRIENTE (114,128). DE ESTA FORMA SE CONSIGUE AHORRAR ESPACIO Y MAYOR LIBERTAD PARA COLOCAR LA FUENTE ENERGETICA.
ES88305407T 1987-06-22 1988-06-14 Circuito integrado con enlace de cubetas. Expired - Lifetime ES2110397T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6523587A 1987-06-22 1987-06-22

Publications (1)

Publication Number Publication Date
ES2110397T3 true ES2110397T3 (es) 1998-02-16

Family

ID=22061276

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88305407T Expired - Lifetime ES2110397T3 (es) 1987-06-22 1988-06-14 Circuito integrado con enlace de cubetas.

Country Status (5)

Country Link
EP (1) EP0296747B1 (es)
JP (1) JPS6421950A (es)
KR (1) KR920003800B1 (es)
DE (1) DE3856086T2 (es)
ES (1) ES2110397T3 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69030822T2 (de) 1989-02-14 1997-11-27 Seiko Epson Corp Halbleitervorrichtung und Verfahren zu ihrer Herstellung
KR100214113B1 (ko) * 1993-05-11 1999-08-02 오가사와라 쇼헤이 터널라이너 그 제조방법 및 그 제조장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208773A (ja) * 1983-05-12 1984-11-27 Nec Corp 半導体装置の製造方法
JPS60120571A (ja) * 1983-12-05 1985-06-28 Hitachi Ltd 半導体集積回路装置
US4677739A (en) * 1984-11-29 1987-07-07 Texas Instruments Incorporated High density CMOS integrated circuit manufacturing process

Also Published As

Publication number Publication date
DE3856086T2 (de) 1998-04-09
KR920003800B1 (ko) 1992-05-14
DE3856086D1 (de) 1998-01-29
JPS6421950A (en) 1989-01-25
EP0296747A1 (en) 1988-12-28
KR890001201A (ko) 1989-03-18
EP0296747B1 (en) 1997-12-17

Similar Documents

Publication Publication Date Title
MY118563A (en) Level conversion circuit and semiconductor integrated circuit device employing the level conversion circuit
KR950034846A (ko) 반도체 집적 회로
EP0785578A3 (en) Circuit comprising complementary thin film transistors
KR860005233A (ko) 유리 집적 광학소자 및 제조방법
JPS57133712A (en) Constituting method of delay circuit in master slice ic
JPS5591162A (en) Semiconductor device
JPS6420666A (en) Power mos transistor structure
EP0183032A3 (en) High density cmos integrated circuit manufacturing process
DE3462641D1 (en) Method of making an integrated insulated-gate field-effect transistor having self-aligned contacts in respect of the gate electrode
EP0376065A3 (en) Semiconductor memory integrated circuit
ES2110397T3 (es) Circuito integrado con enlace de cubetas.
DE60237724D1 (de) Finfet sram-zelle mit invertierten finfet-dünnschichttransistoren
TW377493B (en) Semiconductor integrated circuit device
CA2101559A1 (en) Complementary logic input parallel (clip) logic circuit family
WO1999048100A3 (en) Semi-conductor device with a memory cell
TW338189B (en) CMOS output drive with P-channel substrate tracking for cold spare capability
DE3581789D1 (de) Mos-typ integrierte schaltung mit ladungs- und entladungstransistoren.
EP0231872A3 (en) Switching current source
JPS6439757A (en) Mos transistor resistor
DE50004916D1 (de) Zünder
CA2014296A1 (en) Integrated circuit
EP0632596A3 (en) Logic door with semiconductor transistors.
EP0381237A3 (en) Integrated semiconductor circuit with p and n channel mos transistors
HK68994A (en) Circuit arrangement in an integrated semiconductor circuit
ES2102091T3 (es) Acoplamiento permanente entre dos arboles.

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 296747

Country of ref document: ES