EP4379088A1 - Susceptor bias adjustment apparatus and method, and semiconductor process device - Google Patents

Susceptor bias adjustment apparatus and method, and semiconductor process device Download PDF

Info

Publication number
EP4379088A1
EP4379088A1 EP22848360.8A EP22848360A EP4379088A1 EP 4379088 A1 EP4379088 A1 EP 4379088A1 EP 22848360 A EP22848360 A EP 22848360A EP 4379088 A1 EP4379088 A1 EP 4379088A1
Authority
EP
European Patent Office
Prior art keywords
base
bias adjustment
adjustment unit
impedance
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22848360.8A
Other languages
German (de)
English (en)
French (fr)
Inventor
Chao Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of EP4379088A1 publication Critical patent/EP4379088A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

Definitions

  • the present disclosure relates to the technical field of semiconductor technologies and, more particularly, to a base bias adjustment apparatus and method, and a semiconductor process device.
  • Plasma is widely used in the production process of semiconductor devices.
  • a radio frequency (RF) power source is used to excite process gases in a reaction chamber to generate plasma.
  • Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles interact with a wafer that is placed in the reaction chamber and is exposed to a plasma environment, causing various physical and chemical reactions on a wafer surface to complete wafer etching or other processes.
  • DC bias voltage Because electrons are lighter than positive ions, more electrons fall on the wafer surface than the positive ions in the same period of time, thus forming a negative direct current (DC) bias voltage on the wafer surface.
  • This negative DC bias voltage will attract positively charged ions and active reactive groups in the plasma to accelerate toward the wafer surface and bombard the wafer surface to achieve the desired process results.
  • a value of the DC bias voltage affects bombardment energy of the positive ions, which in turn affects certain process parameters (such as etching rate, deposition rate, etc.)
  • process parameters such as etching rate, deposition rate, etc.
  • a lower electrode RF power supply is used to load an RF excitation signal to a base to increase the negative DC bias voltage on the wafer and correspondingly increase ion energy.
  • FIG. 1 is a structural diagram of a physical vapor deposition (hereinafter referred to as PVD) device.
  • the PVD device includes a reaction chamber 01, and a target 02 provided on the top of the reaction chamber 01.
  • the target 02 is electrically connected to a radio frequency (RF) power supply and a direct current (DC) power supply (neither shown).
  • the target 02 is located inside the reaction chamber 01.
  • a base 03 for carrying a wafer 04 is provided below the target 02 in the reaction chamber 01.
  • the base 03 is electrically connected to the RF power supply 05 through a matcher 06.
  • the RF power supply 05 is used to load the negative bias voltage to the base 03. By changing an RF power output of the RF power supply 05, a bias voltage of the base 03 can be adjusted, thereby controlling parameters such as a deposition rate and film stress.
  • the RF power supply 05 only loads the negative bias voltage to the base 03, it may damage the wafer in some processes, resulting in a high wafer voltage forward (VF) value and a disqualified process result. Moreover, a process window of the PVD device is small and cannot meet different process needs.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and provides a base bias adjustment apparatus and method, and a semiconductor process device, which can meet different process requirements, thereby expanding a process window.
  • the base bias adjustment apparatus includes: a positive bias adjustment unit; a negative bias adjustment unit; and an anti-interference unit.
  • Aa first terminal of the positive bias adjustment unit is grounded, and a second terminal of the positive bias adjustment unit is electrically connected to a base for adjusting a bias voltage of the base to have a positive bias voltage at the base.
  • a first terminal of the negative bias adjustment unit is grounded, and a second terminal of the negative bias adjustment unit is electrically connected to the base through the anti-interference unit for adjusting the bias voltage of the base to have a negative bias voltage at the base.
  • the anti-interference unit is electrically connected between the negative bias adjustment unit and the base for suppressing a current from a circuit between the positive bias adjustment unit and the base from flowing into a circuit between the negative bias adjustment unit and the base, thereby facilitating simultaneous operation of the positive bias adjustment unit and the negative bias adjustment unit in a process.
  • the positive bias adjustment unit includes an impedance variable circuit.
  • One terminal of the impedance variable circuit is electrically connected to the base, and the other terminal of the impedance variable circuit is grounded.
  • the impedance variable circuit is used to adjust the bias voltage of the base by adjusting an impedance of the impedance variable circuit.
  • the impedance variable circuit includes at least one first variable capacitor, at least one variable inductor, or at least one first variable capacitor and at least one variable inductor that are electrically connected, an electrical connection between the at least one first variable capacitor and the at least one variable inductor including a parallel connection, a series connection, or a mixed connection.
  • the anti-interference unit includes a band stop filter or a digital filter.
  • the negative bias adjustment unit includes a radio frequency (RF) power supply and a matching circuit between the RF power supply and the base.
  • RF radio frequency
  • the matching circuit includes a first branch and a second branch, wherein one terminal of the first branch is electrically connected to an output terminal of the RF power supply, the other terminal of the first branch is grounded, and the first branch includes a second variable capacitor. Two terminals of the second branch are electrically connected to the output terminal of the RF power supply and the base respectively, the second branch includes a third variable capacitor, and the anti-interference unit is electrically connected to the second branch.
  • the matching circuit includes a first branch, a second branch, a third branch, and a fourth branch, wherein one terminal of the first branch is electrically connected to an output terminal of the RF power supply, the other terminal of the first branch is grounded, and the first branch includes a second variable capacitor.
  • Two terminals of the second branch are electrically connected to the output terminal of the RF power supply and one terminal of the fourth branch respectively, and the second branch includes a fixed capacitor.
  • One terminal of the third branch is electrically connected to the one terminal of the fourth branch, the other terminal of the third branch is grounded, and the third branch includes a third variable capacitor.
  • the other terminal of the fourth branch is electrically connected to the base through the anti-interference unit.
  • the base bias adjustment apparatus further includes a parameter acquisition unit and a control unit.
  • the parameter acquisition unit is used to acquire a current parameter value related to an impedance of the positive bias adjustment unit in real time, and send it to the control unit.
  • the control unit is used to control the positive bias adjustment unit to adjust a bias voltage of the base until the current parameter value is equal to the preset parameter value.
  • the parameter acquisition unit includes a voltage detection unit for detecting a current bias voltage of the base in real time and sending it to the control unit. According to the current bias voltage and a preset bias voltage, the control unit is used to control the positive bias adjustment unit to adjust the bias voltage of the base until the current bias voltage is equal to the preset bias voltage.
  • the parameter acquisition unit includes an impedance detection unit for detecting an input voltage and an input current of the positive bias adjustment unit in real time and sending it to the control unit.
  • the control unit is used to calculate an input impedance, and according to the input impedance and a preset impedance, the control unit is used to control the positive bias adjustment unit to adjust the bias voltage of the base until the input impedance is equal to the preset impedance.
  • the semiconductor process device includes a reaction chamber, a base provided in the reaction chamber, and a target provided on top of the reaction chamber.
  • the semiconductor process device further includes the disclosed base bias adjustment apparatus, and the base bias adjustment apparatus is electrically connected to the base to adjust a bias voltage of the base.
  • Another aspect of the present disclosure provides a base bias adjustment method being applied to the disclosed base bias adjustment apparatus.
  • the method includes: at S 1, during a process, obtaining the current parameter value related to the impedance of the positive bias adjustment unit; at S2, determining whether the current parameter value is equal to the preset parameter value, if equal, proceeding to S1, and if not equal, proceeding to S3; at S3, controlling the positive bias adjustment unit to adjust the bias voltage of the base until the current bias voltage is equal to the preset parameter value, and proceeding to S 1.
  • the positive bias adjustment unit includes the impedance variable circuit; the one terminal of the impedance variable circuit is electrically connected to the base, and the other terminal of the impedance variable circuit is grounded; the impedance variable circuit is used to adjust the bias voltage of the base by adjusting the impedance of the impedance variable circuit; the impedance variable circuit includes the at least one first variable capacitor, the at least one variable inductor, or the at least one first variable capacitor and the at least one variable inductor that are electrically connected.
  • S3 includes: at S31, driving a moving piece of the first variable capacitor to rotate in a first direction by a unit change amount; at S32, determining whether the current parameter value is equal to the preset parameter value; if equal, proceeding to S1; if not equal, proceeding to S33; at S33, determining whether a distance between a current position and an initial position of the moving piece of the first variable capacitor exceeds a preset threshold; if yes, proceeding to S34; if no, proceeding to S31; at S34, driving the moving piece of the first variable capacitor to rotate in a second direction by the unit change amount, the second direction being opposite to the first direction; at S35, determining whether the current parameter value is equal to the preset parameter value; if equal, proceeding to S1; if not equal, proceeding to S36; at S36, determining whether the distance between the current position and the initial position of the moving piece of the first variable capacitor exceeds the preset threshold; if yes, proceeding to S37; if no, proceeding to S34; and at S
  • the invention has the following beneficial effects.
  • the second terminal of the positive bias adjustment unit is electrically connected to the base
  • the second terminal of the negative bias adjustment unit is electrically connected to the base through the anti-interference unit.
  • the positive bias adjustment unit can cause the base to have a positive bias and the negative bias adjustment unit can cause the base to have a negative bias
  • the simultaneous use of the two can make the adjustment range of the base bias voltage larger, thereby expanding the process window to meet different process requirements.
  • FIG. 2 is a functional block diagram of an exemplary base bias adjustment device according to some embodiments of the present disclosure.
  • the base bias adjustment apparatus includes a positive bias adjustment unit 2, a negative bias adjustment unit 3, and an anti-interference unit 4.
  • a first terminal of the positive bias adjustment unit 2 is grounded, and a second terminal of the positive bias adjustment unit 2 is directly connected to a base 1.
  • Being directly connected refers to that only electrical wires are connected for electrical conduction between the positive bias adjustment unit 2 and the base 1, and no switching devices or other devices are arranged between them.
  • the positive bias voltage adjustment unit 2 and the base 1 are directly electrically connected.
  • the positive bias adjustment unit 2 is used to adjust a bias voltage of the base 1 and is able to apply a positive bias voltage to the base 1.
  • a first terminal of the negative bias adjustment unit 3 is grounded, and a second terminal of the negative bias adjustment unit 3 is connected to the base 1 through the anti-interference unit 4.
  • the negative bias adjustment unit 3 is used to adjust the bias voltage of the base 1 and is able to apply a negative bias voltage to the base 1.
  • the anti-interference unit 4 is connected to a circuit between the negative bias adjustment unit 3 and the base 1, and is used to suppress a current in a circuit between the positive bias adjustment unit 2 and the base 1 from flowing into the circuit between the negative bias adjustment unit 3 and the base 1.
  • the circuit between the positive bias voltage adjustment unit 2 and base 1 and the circuit between the negative bias voltage adjustment unit 3 and the base 1 are directly electrically connected, and both the positive bias voltage adjustment unit 2 and the negative bias voltage adjustment unit 3 are able to simultaneously adjust the bias voltage of the base 1.
  • both the positive bias voltage adjustment unit 2 and the negative bias voltage adjustment unit 3 are able to simultaneously adjust the bias voltage of the base 1.
  • the anti-interference unit 4 it can be ensured that the current from the circuit between the positive bias voltage adjustment unit 2 and the base 1 will not flow into the circuit between the negative bias voltage adjustment unit 3 and the base 1.
  • the circuit between the negative bias adjustment unit 3 and the base 1 is connected in parallel with the circuit between the positive bias adjustment unit 2 and the base 1.
  • the current from the base 1 will be shunted to the two circuits, affecting bias voltage adjustment of the base 1 through the positive bias voltage adjustment unit 2.
  • a desired bias value cannot be accurately adjusted.
  • the bias voltage adjustment of the base 1 through the positive bias adjustment unit 2 will not be affected by the negative bias adjustment unit 3.
  • the positive bias adjustment unit 2 and the negative bias adjustment unit 3 can be used simultaneously during the process. Adjustment range of a base bias voltage can be increased through simultaneous operation of both the positive bias adjustment unit 2 and the negative bias adjustment unit 3, thereby expanding a process window to meet various process requirements.
  • a bias value (i.e., bias voltage) of the base 1 is a sum of a preset positive bias value and a preset negative bias value. If the preset positive bias value is greater than the preset negative bias value, then an adjusted bias value of the base 1 is positive. If the preset positive bias value is less than the preset negative bias value, then the adjusted bias value of the base 1 is negative. In addition, if the positive bias voltage adjustment unit 2 is used alone, the adjusted bias value of the base 1 is positive. If the negative bias voltage adjustment unit 3 is used alone, the adjusted bias value of the base 1 is negative.
  • the use of the positive bias adjustment unit alone or the negative bias adjustment unit alone refers to using the positive bias adjustment unit alone or the negative bias adjustment unit alone to adjust the bias voltage of the base.
  • the circuit between the positive bias adjustment unit 2 and the base 1 and the circuit between the negative bias adjustment unit 3 and the base 1 are always connected.
  • the anti-interference unit 4 may be a band-stop filter or a digital filter, etc.
  • the anti-interference unit 4 is a band-stop filter.
  • the anti-interference unit 4 includes, for example, a fixed capacitor and a fixed inductor connected in parallel. By connecting the band-stop filter to the circuit between the negative bias adjustment unit 3 and the base 1, it ensures that an impedance of the circuit is infinite when a power output by the negative bias adjustment unit 3 can be normally loaded onto the base 1. Thus, the current from the circuit between the positive bias voltage adjustment unit 2 and the base 1 can be suppressed from flowing into the circuit between the negative bias voltage adjustment unit 3 and the base 1.
  • the anti-interference unit 4 can also adopt other suitable structures, as long as it can suppress the current from the circuit between the positive bias adjustment unit 2 and the base 1 from flowing into the circuit between the negative bias adjustment unit 3 and the base 1.
  • the positive bias adjustment unit 2 includes an impedance variable circuit 21.
  • a terminal of the impedance variable circuit 21 is electrically connected to the base 1, and the other terminal of the impedance variable circuit 21 is grounded.
  • the circuit 21 is used to adjust the bias voltage of the base 1 by adjusting an impedance of the variable impedance circuit 21.
  • the impedance variable circuit 21 may include at least one first variable capacitor, or at least one variable inductor, or at least one first variable capacitor and at least one variable inductor that are electrically connected.
  • the impedance variable circuit 21 includes a first variable capacitor 211. By adjusting a capacitance value of the first variable capacitor 211, the impedance of the variable impedance circuit 21 can be adjusted, thereby facilitating adjustment of the bias voltage of the base 1.
  • variable impedance circuit 21 may also include fixed capacitors and/or fixed inductors.
  • the impedance variable circuit 21 also includes a fixed inductor 212 that is connected in series to the variable capacitor 211.
  • the fixed inductor 212 and the variable capacitor 211 will produce series resonance, which can adjust a resonant frequency of the base 1 such that it will not be close to a resonant frequency of a system, thereby avoiding undesired resonance.
  • the negative bias adjustment unit 3 includes a matching circuit 31 and an RF power supply 32. By adjusting the power of the RF power supply 32, the bias voltage of the base 1 can be adjusted.
  • the RF power supply 32 may have an operating frequency at 13MHz or 2MHz.
  • the matching circuit 31 is used to make an input impedance of an impedance matching network (composed of passive components such as capacitors, inductors, etc. between the RF power supply 32 and the base 1) conjugately match an output impedance of the RF power supply 32, thereby reducing power reflection at a load terminal (base 1) and enabling the base 1 to obtain maximum power, that is, achieving impedance matching.
  • an impedance matching network composed of passive components such as capacitors, inductors, etc. between the RF power supply 32 and the base 1 conjugately match an output impedance of the RF power supply 32, thereby reducing power reflection at a load terminal (base 1) and enabling the base 1 to obtain maximum power, that is, achieving impedance matching.
  • the impedance matching network adopts, for example, an L-shaped impedance matching network.
  • the matching circuit 31 includes a first branch 311 and a second branch 312.
  • One terminal of the first branch 311 is electrically connected to an output terminal of the RF power supply 32, and the other terminal of the first branch 311 is grounded.
  • the first branch 311 includes a second variable capacitor 313.
  • Both terminals of the second branch 312 are electrically connected to the output terminal of the RF power supply 32 and the base 1, respectively.
  • the second branch 312 includes a third variable capacitor 314.
  • the adjusted input impedance of the impedance matching network and the adjusted output impedance of the RF power supply 32 can be conjugately matched, thereby achieving impedance matching.
  • the anti-interference unit 4 is connected to the second branch 312.
  • the anti-interference unit 4 may be disposed on the input terminal of the third variable capacitor 314.
  • the anti-interference unit 4 is a band-stop filter including a fixed capacitor and a fixed inductor that are connected in parallel. The anti-interference unit 4 makes an impedance of the second branch 312 infinite, such that the current from the base 1 can only flow into the variable impedance circuit 21, but cannot flow into the second branch 312.
  • FIG. 4A is a Smith chart showing a matching range of impedance matching of a matching circuit without a positive bias adjustment unit according to some embodiments of the present disclosure.
  • FIG. 4B is a Smith chart showing a matching range of impedance matching of a matching circuit with a positive bias adjustment unit according to some embodiments of the present disclosure.
  • the matching circuit has an operating frequency at 13MHz.
  • a range A enclosed by dots in FIG. 4A represents the matching range of impedance matching of the matching circuit without the positive bias adjustment unit.
  • Two ranges B enclosed by dots in FIG. 4B represent the matching range of impedance matching of the matching circuit with the positive bias adjustment unit.
  • the two ranges B respectively correspond to an upper limit and a lower limit of a capacitance value range of the first variable capacitor 211.
  • the range A and the two ranges B have a large overlapping area.
  • the positive bias adjustment unit has negligible impact on the matching range of impedance of the matching circuit. Therefore, the positive bias adjustment unit 2 and the negative bias adjustment unit 3 can be used simultaneously during the process, thereby expanding the adjustment range of the base bias voltage to meet different process requirements.
  • the impedance matching network adopts an L-shaped impedance matching network.
  • the present disclosure is not limited to this.
  • the impedance matching network can adopt any other type, which is not specifically limited by the present disclosure.
  • FIG. 5 is an equivalent circuit diagram of another exemplary base bias adjustment device according to some embodiments of the present disclosure.
  • the base bias adjustment device is an improvement on the base bias adjustment device in the first embodiment.
  • the base bias adjustment device further includes a parameter acquisition unit and a control unit 53.
  • the parameter acquisition unit is used to acquire in real time a current parameter value related to an impedance of the positive bias adjustment unit 2, and send it to the control unit 53.
  • the current parameter value related to the impedance is a current bias voltage of the base 1 or an input voltage value and an input current value of the positive bias adjustment unit 2 (from the base 1), etc.
  • the control unit 53 is used to control the positive bias voltage adjustment unit 2 to adjust the bias voltage of the base 1 according to the current parameter value and a preset parameter value, until the current parameter value is equal to the preset parameter value.
  • the base bias adjustment is automatically controlled.
  • the preset parameter value can be set in the process configuration in advance. Moreover, if the current parameter value is the current bias voltage of the base 1, then the preset parameter value is the preset bias voltage. If the current parameter value is the input voltage value and the input current value of the positive bias voltage adjustment unit 2, then the preset parameter value is a preset impedance value.
  • the power output by the RF power supply 32 can also be set in the process configuration in advance, and the power output by the RF power supply 32 can also be adjusted during the process. That is, during the process, the bias voltage of the base 1 can be adjusted by both the negative bias voltage adjustment unit 3 and the positive bias voltage adjustment unit 2 as long as a final bias voltage of the base 1 reaches a target bias voltage that meets the process requirements.
  • the parameter acquisition unit includes a voltage detection element 51, which is used to detect the current bias voltage of the base 1 in real time and send it to the control unit 53.
  • the control unit 53 is used to control the positive bias adjustment unit 2 to adjust the bias voltage of the base 1 according to the current bias voltage and the preset bias voltage until the current bias voltage is equal to the preset bias voltage.
  • the control unit 53 can drive a moving piece of the first variable capacitor 211 to rotate through a motor 52 to adjust the capacitance value of the first variable capacitor 211, such that the current in the impedance variable circuit 21 can be changed, and the bias voltage of the base 1 can be adjusted.
  • a control mode of the control unit 53 can be adjusted adaptively according to different structures of the positive bias adjustment unit 2.
  • impedance matching by the matching circuit 31 is a known process.
  • the voltage detection element is used to detect the input voltage value and the input current value at the input terminal of the matching circuit 31 in real time
  • the control unit 53 is used to drive the moving pieces of the second variable capacitor 313 and the third variable capacitor 314 to rotate using two motors (341, 342) to adjust the capacitance values of the two capacitors respectively according to the detected input voltage value and the detected input current value, thereby performing impedance matching.
  • FIG. 6 is an equivalent circuit diagram of another exemplary base bias adjustment device according to some embodiments of the present disclosure. Compared with the first and second embodiments, the base bias adjustment device in the third embodiment is different in the impedance variable circuit 21', which is different from the impedance variable circuit 21 in the first and second embodiments.
  • the impedance variable circuit 21' also includes the first variable capacitor 211.
  • the impedance of the variable impedance circuit 21 can be adjusted, thereby adjusting the bias voltage of the base 1.
  • fixed capacitors and/or fixed inductors can be configured in the impedance variable circuit 21 according to different process conditions and process requirements.
  • the impedance variable circuit 21' also includes a fixed inductor 212 connected in parallel with the first variable capacitor 211. The fixed inductor 212 and the first variable capacitor 211 will produce parallel resonance to adjust the resonant frequency of the base 1.
  • the impedance matching network adopts a ⁇ -type impedance matching network.
  • the matching circuit 31' includes a first branch 311, a second branch 312, a third branch 313, and a fourth branch 314.
  • One terminal of the first branch 311 is electrically connected to an output terminal of the RF power supply 32, the other terminal of the first branch 311 is grounded, and the first branch 311 includes a second variable capacitor 315.
  • Two terminals of the second branch 312 are electrically connected to the output terminal of the RF power supply 32 and one terminal of the fourth branch 314 respectively, and the second branch 312 includes a fixed capacitor 316.
  • One terminal of the third branch 313 is electrically connected to one terminal of the fourth branch 314, the other terminal of the third branch 313 is grounded, and the third branch 313 includes a third variable capacitor 317.
  • the other terminal of the fourth branch 314 is electrically connected to the base 1 through the anti-interference unit 4.
  • the anti-interference unit 4 is connected to the fourth branch 314.
  • the anti-interference unit 4 is a band-stop filter including a fixed capacitor and a fixed inductor that are connected in parallel.
  • the anti-interference unit 4 makes the impedance of the fourth branch 314 infinite, such that the current from the base 1 can only flow into the impedance variable circuit 21', but cannot flow into the fourth branch 314.
  • the impedance matching network adopts the ⁇ -type impedance matching network.
  • the present disclosure is not limited to this.
  • the impedance matching network can adopt any other type, for example, the L-shaped impedance matching network as shown in FIG. 4 .
  • FIG. 7 is an equivalent circuit diagram of another exemplary base bias adjustment device according to some embodiments of the present disclosure.
  • the base bias adjustment device in the fourth embodiment is similar to the base bias adjustment device in the second embodiment, and also includes a parameter acquisition unit and a control unit 53.
  • the parameter acquisition unit includes the voltage detection element 54.
  • the impedance detection element 54 is used to detect the input voltage value and the input current value of the positive bias adjustment unit 2 in real time, and send them to the control unit 53.
  • the control unit 53 is used to calculate the input impedance value according to the input voltage value and the input current value, and controls the positive bias voltage adjustment unit 2 to adjust the bias voltage of the base 1 based on the input impedance value and the preset impedance value until the input impedance value is equal to the preset impedance value.
  • the base bias adjustment is automatically controlled.
  • the control unit 53 drives the moving piece of the first variable capacitor 211 to rotate through the motor 52 to adjust the capacitance value of the first variable capacitor 211, such that the current in the impedance variable circuit 21 can be changed, and the bias voltage of the base 1 can be adjusted.
  • the impedance detection element 54 shown in FIG. 7 can also be applied to the base bias adjustment device shown in FIG. 5 and can replace the voltage detection element 51.
  • the voltage detection element 51 can also be applied to the base bias adjustment device shown in FIG. 7 and can replace the impedance detection element 54.
  • the present disclosure also provides a semiconductor process device.
  • the semiconductor process device includes a reaction chamber, a base provided in the reaction chamber, and a target provided on the top of the reaction chamber.
  • the semiconductor process device further includes a base bias adjustment device, which is electrically connected to the base and is used to adjust the bias voltage of the base.
  • the base bias adjustment device can be the base bias adjustment device provided by the embodiments of the present disclosure.
  • the positive bias adjustment unit and the negative bias adjustment unit can always maintain electrical conduction with the base at the same time. At the same time, it is ensured that the bias adjustment of the base by the positive bias adjustment unit will not be affected by the negative bias adjustment unit, that is, the positive bias adjustment unit and the negative bias adjustment unit can be used simultaneously during the process, and mutual interference between the two can be avoided.
  • the positive bias adjustment unit can cause the base to have a positive bias voltage
  • the negative bias adjustment unit can cause the base to have a negative bias voltage
  • the present disclosure also provides a base bias adjustment method.
  • the method can be applied to the base bias adjustment device provided in the second or the fourth embodiment.
  • the base bias adjustment device is as shown in FIG. 5 or FIG. 7 .
  • the base bias adjustment method includes the following processes.
  • the current parameter value related to the impedance is the current bias voltage of the base 1 or the input voltage value and the input current value of the positive bias voltage adjustment unit 2, etc.
  • the preset parameter values can be set in the process configuration in advance. Moreover, if the current parameter value is the current bias voltage of the base 1, then the preset parameter value is the preset bias voltage. If the current parameter value is the input voltage value and input current value of the positive bias voltage adjustment unit 2, then the preset parameter value is the preset impedance value.
  • the positive bias voltage adjustment unit 2 is controlled to adjust the bias voltage of the base 1 until the current bias value is equal to the preset parameter value, and then the method proceeds to the S1.
  • the parameter acquisition unit includes the voltage detection element 51.
  • the current bias voltage of the base 1 is detected in real time through the voltage detection element 51.
  • whether the current bias voltage is equal to the preset bias voltage is determined. If equal, the method proceeds to S1. If not equal, the method proceeds to S3.
  • the positive bias voltage adjustment unit 2 is controlled to adjust the bias voltage of the base 1 until the current bias voltage is equal to the preset bias voltage.
  • the parameter acquisition unit includes the impedance detection element 54.
  • the input voltage and the input current of the positive bias adjustment unit 2 are detected in real time through the impedance detection element 54.
  • the input impedance is calculated according to the input voltage and the input current, and the calculated input impedance is the current impedance. Whether the current impedance is equal to the preset impedance is determined. If equal, the method proceeds to S1. If not equal, the method proceeds to S3.
  • the positive bias voltage adjustment unit 2 is controlled to adjust the bias voltage of the base 1 until the current impedance is equal to the preset impedance.
  • the difference between the current impedance and the preset impedance is calculated, and the positive bias voltage adjustment unit 2 is controlled to adjust the bias voltage of the base 1 according to the difference until the current impedance is equal to the preset impedance.
  • the bias voltage of the base can be adjusted in real time during the process, such that the process requirements can be satisfied and process consistency can be ensured for different process chambers.
  • the base bias adjustment method provided in this embodiment can achieve automatic control of the base bias adjustment.
  • S3 further includes the following processes.
  • the moving piece of the first variable capacitor 211 is driven to rotate in a first direction by a unit change amount.
  • the unit change amount is an angle of each rotation of the moving piece of the first variable capacitor 211, that is, the angle change amount.
  • the capacitance value of the first variable capacitor 211 can be adjusted by the motor 52 driving the rotor of the first variable capacitor 211 to rotate.
  • the parameter acquisition unit includes the voltage detection element 51 shown in FIG. 5 , then the current parameter value is the current bias voltage, and the preset parameter value is the preset bias voltage. If the parameter acquisition unit includes the impedance detection element 54 shown in FIG. 7 , then the current parameter value is the current impedance, and the preset parameter value is the preset impedance.
  • the preset threshold is, for example, 5% of the angle value corresponding to the initial position of the moving piece of the first variable capacitor 211.
  • the moving piece of the first variable capacitor 211 is driven to rotate in a second direction by the unit change amount.
  • the second direction is opposite to the first direction.
  • the second terminal of the positive bias adjustment unit is electrically connected to the base
  • the second terminal of the negative bias adjustment unit is electrically connected to the base through the anti-interference unit.
  • the positive bias adjustment unit can cause the base to have a positive bias and the negative bias adjustment unit can cause the base to have a negative bias
  • the simultaneous use of the two can make the adjustment range of the base bias voltage larger, thereby expanding the process window to meet different process requirements.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
EP22848360.8A 2021-07-27 2022-07-20 Susceptor bias adjustment apparatus and method, and semiconductor process device Pending EP4379088A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110849800.0A CN113604788B (zh) 2021-07-27 2021-07-27 基座偏压调节装置和方法、半导体工艺设备
PCT/CN2022/106654 WO2023005755A1 (zh) 2021-07-27 2022-07-20 基座偏压调节装置和方法、半导体工艺设备

Publications (1)

Publication Number Publication Date
EP4379088A1 true EP4379088A1 (en) 2024-06-05

Family

ID=78338424

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22848360.8A Pending EP4379088A1 (en) 2021-07-27 2022-07-20 Susceptor bias adjustment apparatus and method, and semiconductor process device

Country Status (5)

Country Link
EP (1) EP4379088A1 (zh)
KR (1) KR20240001211A (zh)
CN (1) CN113604788B (zh)
TW (1) TW202306436A (zh)
WO (1) WO2023005755A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100541967C (zh) * 2007-05-29 2009-09-16 东南大学 一种串并联隔离无源电力滤波器
JP6450072B2 (ja) * 2014-01-15 2019-01-09 株式会社ダイヘン インピーダンス整合装置
CN203912292U (zh) * 2014-06-26 2014-10-29 京东方光科技有限公司 一种分段式调光电路及可调光照明设备
CN106702335B (zh) * 2015-11-13 2019-08-23 北京北方华创微电子装备有限公司 下电极及半导体加工设备
CN107180737B (zh) * 2016-03-11 2019-10-08 北京北方华创微电子装备有限公司 用于实现阻抗匹配和功率分配的装置及半导体加工设备
CN109119317B (zh) * 2017-06-23 2020-11-10 北京北方华创微电子装备有限公司 一种偏压调制方法、偏压调制系统和等离子体处理设备
CN107230981A (zh) * 2017-07-07 2017-10-03 华中科技大学 一种含谐波吸收器的串联混合型有源滤波器
CN109797371B (zh) * 2017-11-17 2021-10-15 北京北方华创微电子装备有限公司 基座偏压调节装置、半导体加工设备及薄膜制作方法
CN113604788B (zh) * 2021-07-27 2022-10-21 北京北方华创微电子装备有限公司 基座偏压调节装置和方法、半导体工艺设备

Also Published As

Publication number Publication date
TW202306436A (zh) 2023-02-01
WO2023005755A1 (zh) 2023-02-02
CN113604788A (zh) 2021-11-05
KR20240001211A (ko) 2024-01-03
CN113604788B (zh) 2022-10-21

Similar Documents

Publication Publication Date Title
CN105826154B (zh) 针对脉冲射频电源的阻抗匹配方法及装置
TWI614807B (zh) 電漿處理裝置
KR101993880B1 (ko) 플라즈마 처리 장치
JP6162016B2 (ja) プラズマ処理装置
JP6424024B2 (ja) プラズマ処理装置及びプラズマ処理方法
KR20160113983A (ko) 전원 시스템, 플라즈마 처리 장치 및 전원 제어 방법
US6642661B2 (en) Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
EP4379088A1 (en) Susceptor bias adjustment apparatus and method, and semiconductor process device
CN112259433B (zh) 阻抗匹配方法、阻抗匹配器和半导体工艺设备
WO2023043558A1 (en) Distortion current mitigation in a radio frequency plasma processing chamber
CN112616320B (zh) 等离子处理装置
US20220399184A1 (en) Plasma uniformity control in pulsed dc plasma chamber
CN109119317B (zh) 一种偏压调制方法、偏压调制系统和等离子体处理设备
JP2023507941A (ja) 半導体処理装置及び半導体処理装置の誘電体窓洗浄方法
US20230298856A1 (en) Apparatus and method for delivering a plurality of waveform signals during plasma processing
US20220392750A1 (en) Plasma excitation with ion energy control
CN110858530B (zh) 匹配网络、阻抗匹配器以及阻抗匹配方法
US20240194447A1 (en) Learning based tuning in a radio frequency plasma processing chamber
US20240079212A1 (en) Scanning impedance measurement in a radio frequency plasma processing chamber
CN218730791U (zh) 阻抗匹配器及半导体工艺设备
US20230253185A1 (en) Systems and Methods for Radiofrequency Signal Generator-Based Control of Impedance Matching System
WO2024123377A1 (en) Chamber impedance management in a processing chamber

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20231123

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR