EP4364297A1 - Verbesserungen in bezug auf quantenberechnung - Google Patents

Verbesserungen in bezug auf quantenberechnung

Info

Publication number
EP4364297A1
EP4364297A1 EP22737969.0A EP22737969A EP4364297A1 EP 4364297 A1 EP4364297 A1 EP 4364297A1 EP 22737969 A EP22737969 A EP 22737969A EP 4364297 A1 EP4364297 A1 EP 4364297A1
Authority
EP
European Patent Office
Prior art keywords
dacs
dac
ion trap
trap according
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22737969.0A
Other languages
English (en)
French (fr)
Inventor
Zak David ROMASZKO
Iain Mcintosh Hunter
Harold Godwin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sussex
Universal Quantum Ltd
Original Assignee
University of Sussex
Universal Quantum Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sussex, Universal Quantum Ltd filed Critical University of Sussex
Publication of EP4364297A1 publication Critical patent/EP4364297A1/de
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/004Reconfigurable analogue/digital or digital/analogue converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66Digital/analogue converters

Definitions

  • the present invention relates to improvements in or relating to quantum computing, and in particular, to improved Digital to Analogue Converters (DACs) for optimised surface ion traps.
  • DACs Digital to Analogue Converters
  • Quantum computing in general, unlike so-called “classical computing”, relies on the quantum mechanical properties of particles or matter to produce or alter data.
  • the data may be represented by quantum bits or “qubits”, which is a two state quantum mechanical system. Unlike classical computing, the qubit may be in superposition of quantum states.
  • Another feature of quantum computing is the entanglement between qubits in which the state of one particle or atom is influenced by another particle or atom.
  • Quantum mechanical qubits are able to encode information as combinations of zeros and ones simultaneously. Such properties open numerous complex numerical applications that are traditionally difficult for classical computers. Examples include artificial Intelligence, image processing and recognition, cryptography, or secure communications and so on.
  • Zeeman split states can be revealed by the use of a magnetic field and the different electron levels used as the different qubit states and electrons moved between the levels using microwave radiation or lasers.
  • ion trap quantum computers In ion trap quantum computers surface ion traps are used to control ions used in quantum computation and surface electrodes are used to generate electric fields to manipulate and trap the ions suspended in free space. The surface electrode potentials of an ion-trap are in turn controlled by DACs. State-of-the-art quantum computers use many DACs of the same type, for example 16 bit DACs with a better than 1 MHz update rate.
  • the performance of surface ion traps can be considered in terms of meeting requirements for noise, bandwidth, power and resolution and a DAC is chosen for use which best fits these requirements across the entire surface ion trap.
  • Ion traps currently use the same DACs across the ion trap which have characteristics which suffice across the entire ion trap. They have sufficient bandwidth for the shuttling areas and low enough noise to allow the gate operations to be executed.
  • an ion trap comprising a plurality of electrodes and DACs, each electrode being controlled by a DAC, wherein a first set of DACs control the electrodes configured to trap an ion in a first area and a second set of DACs control the electrodes configured to trap an ion in a second area wherein the first set of DACs are configured to operate with low noise and the second set of DACs are configured to operate with a high bandwidth.
  • the first set of DACs may be a different type of DAC from the second set of DACs.
  • the first set of DACs may be configured to operate with low noise and low bandwidth and the second set of DACs may be configured to operate with a high bandwidth but resultantly have a larger noise profile.
  • a low noise DAC may have less than 10nV/rtHz or more particularly less than 5 nV/rtHz.
  • a high bandwidth DAC may have a bandwidth of 1 million updates per second (1 MSPS).
  • a DAC with the most suitable characterised may be selected. This also helps to minimise space because, in areas in which minimising noise is not so important, smaller DACs can be used. DACs with larger footprints may be used in areas where minimising noise is more critical.
  • an additional set of electrodes also configured to trap ions in the first area, a third set of DACs and each additional electrode being controlled by one of the third set of DACs, the third set of DACs being configured to operate with high bandwidth and high noise.
  • the additional electrodes may be interleaved with the plurality of electrodes. Thus the additional electrodes can be used for high speed applications and the original, first electrodes can be used for low noise and low bandwidth applications.
  • the first set of DACs may be the same type as the second set of DACs, each DAC having two modes of operation: a first mode with low noise and low bandwidth and a second mode with high noise and high bandwidth. Thus different modes of operation can be used for different applications.
  • Each DAC has an output and may comprise a first sub-DAC and a second sub-DAC, the output of the DAC being selected by one or more of an output switch connected to one or more of the sub-DACs, a power switch connected to one or more of the sub-DACs, and/or analogue summing of the sub-DACs.
  • the first sub-DAC may comprise capacitive architecture and the second sub-DAC may comprise resistive architecture.
  • the first sub-DAC may have no, or minimal, resistive elements so that it operates with very low noise.
  • the second sub-DAC may have no, or minimal capacitive elements. The second sub-DAC may therefore operate fast and occupy only a small area, but consequently generate more noise..
  • the first sub-DAC and the second sub-DAC may take different formats.
  • the DAC may comprise a precision code portion for operating in the first mode with low noise and low bandwidth and a second fast code portion for operating in the second mode with high noise and high bandwidth, the surface ion trap further comprising a switch for switching between the precision code portion and the fast code portion.
  • the first mode may comprise a feedback loop which avoids drift in low noise, low bandwidth applications.
  • the feedback loop may comprises a proportional integrative derivative controller configured to control the output to a reference output.
  • the DAC may use selectable compensation and/or a variable gain stage.
  • the ion trap may be a surface ion trap.
  • an ion trap quantum computer comprising an ion trap as described above.
  • the DAC can be selected according to the purpose and design requirements (such as footprint size, noise and speed) of the region. There is a balance between the noise, the bandwidth, the power and the footprint size. For example, in gate regions in which noise reduction is important a low noise DAC may be used. Low noise DACs often have a larger footprint. Conversely, in shuttling areas only a small area may be available and a high bandwidth DAC may be used. There may be a higher noise associated with such a DAC but, in the shuttling areas, this may be acceptable.
  • Figure 1 shows a schematic representation of an x-junction device in a trapped ion quantum computer, with DACs tailored to the specific use for a given area;
  • Figure 2 shows a schematic representation of two DACs being used independently in the same area
  • Figure 3A depicts a potential energy plot for two DACs operating independently in the same area
  • Figure 3B depicts a potential energy plot for two DACs operating independently in the same area
  • FIG. 4 shows a dual electrode scheme with the shuttling control DAC having a series of fast switches to references
  • Figures 5 shows a surface view of a surface ion trap with several pairs of axial electrodes
  • Figure 6 shows a surface view of a surface ion trap with interleaved electrode pairs
  • Figure 7 shows a single hybrid DAC architecture for achieving precision or high speed
  • Figure 8 shows a single hybrid DAC architecture for achieving high speed and low drift
  • Figure 9 shows a scheme for selectable compensation in the output stage
  • Figure 10 shows a scheme for using a variable gain stage in the feedback loop.
  • FIG. 1 there is an example depicting different DACs being used in different areas of a quantum computer, according to the present invention.
  • Figure 1 shows an x-junction device 12 in a trapped ion quantum computer 10.
  • the x-junction device 12 is divided into areas.
  • the areas of the x-junction device 12 can be divided into crystal operations 14, junction shuttling 16, logic region/ gate zone 18 and linear shuttling 20 depending on the function being carried out in each area.
  • Each area of the x-junction device 12 has different requirements for noise, bandwidth, drift, linearity, resolution and power consumption.
  • the x-junction 12 comprises a plurality of electrodes 22 configured to trap an ion in an area of the x-junction device 12. Each electrode 22 is driven by a DAC to carry out the function of the area of the x-junction device 12.
  • Dividing the x-junction device 12 into areas depending on the requirements for that area of the device facilitates the selection of a DAC which can achieve the best performance in each area of the device.
  • an x shaped junction is depicted here, the junction does not need to be x shaped and could be divided into areas simply by function of the electrodes.
  • the logic region 18 of the x-junction device 12 requires low noise and high resolution, and a 16-bit DAC with a low noise level - for example below 100nV/rtFlz and preferably below 10nV/rtFlz or in particular 5nV/rtFlz.
  • the level can be selected to best meet the requirements in this area of the x-junction device 12.
  • An example DAC would be AD5791 which has 20 bit resolution with a 7.5nV/rtHz noise spectral density which is 7.5pV RMS over 1MHz bandwidth. The AD5791 settles within 1 ps to 0.02% and has a 1 MSPS update rate. .
  • the linear shuttling 20 and junction shuttling 16 areas of the x- junction device 12 require high bandwidth and lower resolution. These areas may preferably have an update rate greater than 1 million updates per second.
  • One example is an 8-bit DAC with a 100 MHz bandwidth which can be selected to most appropriately meet the requirements for electrode control in these areas of the device.
  • An example DAC for the linear shuttling area or the junction shuttling may be a LTC1668 which has 10ns settling with 50MSPS update rate, 16 bit resolution and 50pA/rtHz noise.
  • Dividing the x-junction device 12 into areas with sets of DACs configured to operate with certain performance characteristics can lower the power consumption of the quantum computer, whilst optimising the use of space on the silicon chip. However, shuttling will still occur in the logic region and it is therefore desirable to optimise the properties.
  • a scheme as shown in Figure 2 can be used to achieve further increases in performance in surface ion traps which require a dual functionality such as shuttling speed and low noise quantum operations.
  • a scheme as shown in Figure 2 can be implemented in a gate zone/logic region 18 of a device for example, which requires shuttling in the gate-zone area, and therefore requires a high bandwidth for shuttling in addition to a low noise and high resolution.
  • Figure 2 shows two DACs 26 and 28 with independent DAC outputs.
  • a selection mechanism 24 enables the selection of a DAC which can best meet the requirements for the task to be performed, and can achieve the best control over the position of ions.
  • the first DAC 26 may have a capacitive architecture and thus be used for applications in which low noise is required. In particular, the first DAC has no resistive portion and therefore very quiet.
  • the second DAC may have a resistive architecture and thus be used for application in which a high bandwidth is required.
  • the selection mechanism 24 enables the electric field at the ion position to be generated from either or both of the two independent DAC outputs.
  • the selection mechanism 24 can be, but is not limited to, an output which connects or disconnects the DACs as required; a power switch which enables or disables the DAC outputs as required; an analogue summing circuit with appropriately weighted DAC outputs; an e-field summing which divides the electrode area into two separate interleaved areas; or can be part of the DAC design itself such as in a hybrid DAC.
  • the selection mechanism 24 can be one or more of these mechanisms in combination.
  • Figure 3 depicts potential energy plots for a scheme with two independently operable DACs as shown in Figure 2.
  • Figure 3A depicts an example in which a first DAC ‘DAC’1 is a high speed DAC and is set to 0V everywhere.
  • a second DAC ‘DAC 2’ which is a low noise DAC results in a potential well in the sum potential in the gate-zone/logic region 18.
  • Figure 3B shows the potential energy plot when shuttling into and out of the gate zone/logic region 18 is performed by adjusting the DAC 1 output. The sum potential shifts to the right. The potential well created by DAC 2 does not change, and as such there is no bandwidth requirement imposed on DAC 2.
  • the selection mechanism 24 is an output switch, the DAC not in use can be temporarily switched off, or disconnected from the ion to avoid contribution of noise.
  • a power switch can be used to de power the DAC not in use.
  • the DAC selection mechanism 24 can be included in the DAC design itself which can prevent the need to separately and independently silence the inactive DAC.
  • DACs can have an internal switch which alters the DAC architecture and prevent the contribution of the DAC not in use. In some embodiments, a switch is undesirable owing to switching noise or charge injection.
  • DACs can be configured such that the noise output is code dependant, and the idle state during a quantum operation is at the lowest noise level. This is typical of DACs where the output noise is dominated by the input reference noise, and is therefore reduced with codes which produce smaller fractions of the reference as outputs.
  • FIG. 4 shows a scheme in which a shuttling control DAC is implemented as a series of fast switches to references, and the gatezone DAC as a static filtered reference voltage.
  • the electrodes are arranged so that the Qubit sees the field sum of the two outputs.
  • Figure 5 shows a surface view of the surface ion trap with several pairs of axial electrodes.
  • Figure 6 shows a surface view of the surface ion trap with single axial position electrodes replaced with interleaved electrode pairs.
  • any other arbitrary electrode shape which achieves the desired effect of summing the e-field at the ion may be used.
  • Figure 7 shows a scheme for a hybrid DAC with a bespoke architecture, in which the selection mechanism is included in the DAC design itself.
  • Figure 7 shows an example in which a location requires a precision or a high speed DAC at various times.
  • a single hybrid DAC architecture is created by combining a precision code and a fast code.
  • FIG 8 shows another scheme for a hybrid DAC architecture, for a location which requires high speed or low drift at various times.
  • This scheme includes a proportional integral derivative (PID) controller and a low speed feedback loop.
  • PID proportional integral derivative
  • the low speed feedback loop checks the level back to the reference input, and facilitates adjustment.
  • Figure 9 shows an additional scheme for a hybrid DAC architecture, using selectable compensation in the output stage.
  • Figure 10 shows a method using a variable gain stage in the feedback loop (using open loop gain of amplifier). This would also be possible using switchable filters.

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Computing Systems (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
EP22737969.0A 2021-06-30 2022-06-30 Verbesserungen in bezug auf quantenberechnung Pending EP4364297A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2109471.9A GB2608987A (en) 2021-06-30 2021-06-30 Improvements in or relating to quantum computing
PCT/GB2022/051688 WO2023275556A1 (en) 2021-06-30 2022-06-30 Improvements in or relating to quantum computing

Publications (1)

Publication Number Publication Date
EP4364297A1 true EP4364297A1 (de) 2024-05-08

Family

ID=77179690

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22737969.0A Pending EP4364297A1 (de) 2021-06-30 2022-06-30 Verbesserungen in bezug auf quantenberechnung

Country Status (5)

Country Link
EP (1) EP4364297A1 (de)
CN (1) CN118104138A (de)
AU (1) AU2022303449A1 (de)
GB (1) GB2608987A (de)
WO (1) WO2023275556A1 (de)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11037776B1 (en) * 2019-12-17 2021-06-15 Honeywell International Inc. Apparatuses, systems, and methods for ion traps

Also Published As

Publication number Publication date
GB2608987A (en) 2023-01-25
AU2022303449A1 (en) 2024-02-15
GB202109471D0 (en) 2021-08-11
WO2023275556A1 (en) 2023-01-05
CN118104138A (zh) 2024-05-28

Similar Documents

Publication Publication Date Title
US6507295B2 (en) Method to reduce glitch energy in digital-to-analog converter
US8441382B2 (en) Current steering DAC with switched cascode output current source/sink
US7459966B2 (en) Offset adjusting circuit and operational amplifier circuit
US8558727B2 (en) Compensated current cell to scale switching glitches in digital to analog convertors
EP1257060B1 (de) Digital-Analog-Wandler mit Stromquellenanordnung
CN104052444A (zh) 具有快速接通的自举开关电路
CN104426546A (zh) 线性和dc精确前端dac和输入结构
AU2022303449A1 (en) Improvements in or relating to quantum computing
CN112805923A (zh) 连续时间σ-δ模数转换器
CN114747137A (zh) 低功耗运算放大器微调偏移电路系统
TW201828607A (zh) 數位類比轉換器
TWI359560B (en) Rail-to-rail amplified circuit and semiconductor d
US11509319B2 (en) Low integral non-linearity digital-to-time converter for fractional-N PLLS
CN115333535A (zh) 具有增益选择的缓冲器
GB2609443A (en) Improvements in or relating to quantum computing
EP3420639A1 (de) Digital-analog-wandler und verfahren zur digital-analog-wandlung
CN108259026A (zh) 一种相位插值器电路及其提升线性度的方法
WO2023037124A1 (en) Improvements in or relating to quantum computing
US6466148B1 (en) D/A conversion method and D/A converter
JPH03928B2 (de)
Catania et al. Analog gates for a VLSI fuzzy processor
GB2610595A (en) Improvements in or relating to quantum computing
US20240006092A1 (en) Method and circuitry to apply an individual dc offset to electrodes on a large-scale ion trap quantum computer
EP4377851A1 (de) Verbesserungen in bezug auf quantenberechnung
US10673449B1 (en) Digital-to-analog converter with glitch-irrelevant reference voltage to increase linearity

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20231219

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR