EP4292132A1 - Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif - Google Patents

Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif

Info

Publication number
EP4292132A1
EP4292132A1 EP22753113.4A EP22753113A EP4292132A1 EP 4292132 A1 EP4292132 A1 EP 4292132A1 EP 22753113 A EP22753113 A EP 22753113A EP 4292132 A1 EP4292132 A1 EP 4292132A1
Authority
EP
European Patent Office
Prior art keywords
region
source
gate
distance
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP22753113.4A
Other languages
German (de)
English (en)
Inventor
Saptharishi Sriram
Jia GUO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Wolfspeed Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/172,669 external-priority patent/US20210167199A1/en
Application filed by Wolfspeed Inc filed Critical Wolfspeed Inc
Publication of EP4292132A1 publication Critical patent/EP4292132A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors

Definitions

  • the disclosure relates to microelectronic devices and more particularly to gallium nitride high-electron mobility transistors with buried p-type layers.
  • the disclosure also relates to a process of making microelectronic devices and more particularly to a process of making gallium nitride high-electron mobility transistors with buried p-type layers.
  • GaN HEMTs Group Ill-Nitride based or gallium nitride (GaN) based high-electron mobility transistors (HEMTs) are very promising candidates for high power radiofrequency (RF) applications, both in discrete and MMIC (Monolithic Microwave Integrated Circuit) forms.
  • Current GaN HEMT designs use buffer layers that include traps to achieve desired breakdown. However, these traps cause memory effects that adversely affect performance. In particular, these designs show some trapping associated with what is called a “gate lag effect.” The gate lag effect may be particularly prevalent at high negative gate voltages.
  • One general aspect includes an apparatus that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source electrically coupled to the group Ill-Nitride barrier layer; a gate electrically coupled to the group Ill-Nitride barrier layer; a drain electrically coupled to the group Ill-Nitride barrier layer; and a p-region being arranged at least in the substrate, where the p- region extends toward a source side of the substrate; and where the p-region extends toward a drain side of the substrate.
  • One general aspect includes a method of making a device that includes providing a substrate; providing a group Ill-Nitride buffer layer on the substrate; providing a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; electrically coupling a source to the group Ill-Nitride barrier layer; electrically coupling a gate to the group Ill-Nitride barrier layer; electrically coupling a drain to the group Ill-Nitride barrier layer; and providing a p- region being arranged at least in the substrate, where the p-region extends toward a source side of the substrate; and where the p-region extends toward a drain side of the substrate.
  • One general aspect includes an apparatus that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source electrically coupled to the group Ill-Nitride barrier layer; a gate electrically coupled to the group Ill-Nitride barrier layer; a drain electrically coupled to the group Ill-Nitride barrier layer; and a p-region being arranged at least in the substrate, where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • One general aspect includes a method of making a device that includes providing a substrate; providing a group Ill-Nitride buffer layer on the substrate; providing a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; electrically coupling a source to the group Ill-Nitride barrier layer; electrically coupling a gate to the group Ill-Nitride barrier layer; electrically coupling a drain to the group Ill-Nitride barrier layer; and providing a p- region being arranged at least in the substrate, where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • One general aspect includes an apparatus, that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer may include a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source on the group Ill-Nitride barrier layer; a drain on the group Ill-Nitride barrier layer; a gate on the group Ill-Nitride barrier layer between the source and the drain; a p-region being arranged at least in the substrate; and where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • Figure 1 shows a cross-sectional view of one aspect of a transistor according to the disclosure.
  • Figure 2 shows a cross-sectional view of an aspect of a transistor according to the disclosure.
  • Figure 3 illustrates a semiconductor device that may include a plurality of unit cell transistors in accordance with an aspect of the disclosure.
  • Figure 4 is a schematic cross-sectional view taken along line IV-IV of Figure 3.
  • Figure 5 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 6 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 7 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 8 shows a cross-sectional view of another aspect of a transistor according to the disclosure.
  • Figure 9 shows a cross-sectional view of another aspect of a transistor according to the disclosure.
  • Figure 10 shows a cross-sectional view of another aspect of a transistor according to the disclosure.
  • Figure 11 shows a process for making a transistor according to the disclosure. DETAILED DESCRIPTION OF THE DISCLOSURE
  • Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
  • the characteristics of the semiconductor material from which a transistor is formed may also affect operating parameters.
  • the electron mobility, saturated electron drift velocity, electric breakdown field, and thermal conductivity may have an effect on a transistor's high frequency and high power characteristics.
  • Electron mobility is the measurement of how rapidly an electron is accelerated to its saturated velocity in the presence of an electric field.
  • semiconductor materials which had a high electron mobility, were preferred because more current could be developed with a lesser field, resulting in faster response times when a field is applied.
  • Saturated electron drift velocity is the maximum velocity that an electron can obtain in the semiconductor material. Materials with higher saturated electron drift velocities are preferred for high frequency applications because the higher velocity translates to shorter times from source to drain.
  • Electric breakdown field is the field strength at which breakdown of the Schottky junction and the current through the gate of the device suddenly increases.
  • a high electric breakdown field material is preferred for high power, high frequency transistors because larger electric fields generally can be supported by a given dimension of material. Larger electric fields allow for faster transients as the electrons can be accelerated more quickly by larger electric fields than by smaller ones.
  • Thermal conductivity is the ability of the semiconductor material to dissipate heat. In typical operations, all transistors generate heat. In turn, high power and high frequency transistors usually generate larger amounts of heat than small signal transistors. As the temperature of the semiconductor material increases, the junction leakage currents generally increase and the current through the field effect transistor generally decreases due to a decrease in carrier mobility with an increase in temperature. Therefore, if the heat is dissipated from the semiconductor, the material will remain at a lower temperature and be capable of carrying larger currents with lower leakage currents.
  • the disclosure includes both extrinsic and intrinsic semiconductors.
  • Intrinsic semiconductors are undoped (pure).
  • Extrinsic semiconductors are doped, meaning an agent has been introduced to change the electron and hole carrier concentration of the semiconductor at thermal equilibrium.
  • Both p-type and n-type semiconductors are disclosed, with p-types having a larger hole concentration than electron concentration, and n-types having a larger electron concentration than hole concentration.
  • Silicon carbide (SiC) has excellent physical and electronic properties, which should theoretically allow production of electronic devices that can operate at higher temperatures, higher power, and higher frequency than devices produced from silicon (Si) or gallium arsenide (GaAs) substrates.
  • the transistor of the disclosure comprises Si, GaAs or other suitable substrates.
  • GaN based HEMTs are very promising candidates for high power RF applications, both in discrete and MMIC forms.
  • GaN HEMT designs may use buffer layers that include traps to achieve desired breakdown. However, these traps may cause memory effects that adversely affect performance.
  • structures with buried p layers may be utilized to enable obtaining breakdown with minimal trapping. These devices show reduction and/or elimination of drain lag effect and the part of trapping associated with that effect. However, they still show some trapping associated with what is called a “gate lag effect,” particularly at high negative gate voltages.
  • the methods proposed here enable GaN HEMT devices to be implemented without trapping effects or with reduced trapping effects.
  • the proposed structure can be fabricated with currently available tools and techniques.
  • the methods described here will allow significant improvements in the performance of both commercial and defense applications. They may also enable in the future devices for low noise applications.
  • Possible aspects may include:
  • Another aspect is to have a contact to the p-layer at the ends as above, but not connect it to the gate metal. Instead, a separate contact pad may be provided for this connection. A negative voltage may be applied to this terminal. The applied negative voltage may be more negative than the negative gate bias.
  • a third aspect may be similar to aspect 2 above and may further include an RF choke configuration to prevent flow of RF current through this terminal.
  • Figure 1 shows a cross-sectional view of an aspect of a transistor according to the disclosure.
  • Figure 1 shows a cross-sectional view of a transistor 100.
  • the transistor 100 may include a substrate layer 102.
  • the substrate layer 102 may be made of Silicon Carbide (SiC).
  • the substrate layer 102 may be a semi-insulating SiC substrate, a p-type substrate, an n-type substrate, and/or the like.
  • the substrate layer 102 may be very lightly doped.
  • the background impurity levels may be low.
  • the background impurity levels may be 1 E15/cm 3 or less.
  • the substrate layer 102 may be formed of SiC selected from the group of 6H, 4H, 15R, 3C SiC, or the like.
  • the substrate layer 102 may be formed of SiC that may be semi-insulating and doped with vanadium or any other suitable dopant or undoped of high purity with defects providing the semi-insulating properties.
  • the substrate layer 102 may be GaAs, GaN, or other material suitable for the applications described herein.
  • the substrate layer 102 may include sapphire, spinel, ZnO, silicon, or any other material capable of supporting growth of Group Ill-nitride materials.
  • the substrate layer 102 may include a planer upper surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis).
  • the substrate layer 102 may include a planer lower surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis). Where upper and lower are defined along the Y axis.
  • the transistor 100 may include a buried p-region or p-type material layer 106 that may be formed within the substrate layer 102.
  • the p-type material layer 106 may be provided solely in the substrate layer 102, extend from the substrate layer 102 to epitaxial layers within the transistor 100, or located solely in the epitaxial layers of the transistor 100.
  • the dopants can be incorporated into the epitaxial layers by ion implantation alone, through epitaxial growth, or a combination of both.
  • the p-type material layer 106 can span multiple layers and include multiple areas of different or graded p-doping.
  • the p-type material layer 106 may also be formed below the barrier layer 108 between the barrier layer 108 and the substrate layer 102 and/or within the substrate layer 102.
  • the substrate layer 102 may include the p-type material layer 106.
  • the p-type material layer 106 may be formed by ion implantation of aluminum (Al) and annealing. In other aspects, the p-type material layer 106 may be formed by ion implantation of boron, gallium, or any other material that may form a p-type layer or a combination of these. In one aspect, the p-type material layer 106 may be formed by implantation and annealing of Al prior to the growth of any GaN layers.
  • the ion implementation may utilize channeling implants. In one aspect, the channeling implants may include aligning the ion beam to the substrate layer 102. Alignment of the ion beam may result in increased implanting efficiency.
  • aspects of the disclosure may utilize implant channeling to controllably form implanted regions of the p-type material layer 106 in silicon carbide implementations of the substrate layer 102 that are highly uniform by depth and also result in reduced lattice damage.
  • Channeling is experienced when ions are implanted along a crystal axis of the substrate layer 102.
  • the atoms in the crystal lattice appear to "line up" relative to the direction of implantation, and the implanted ions appear to travel down the channels created by the crystal structure to form the p-type material layer 106. This reduces the likelihood of collisions between the implanted ions and the atoms in the crystal lattice.
  • the depth of the implant of the p-type material layer 106 may be greatly increased.
  • channeling occurs in silicon carbide when the direction of implantation is within about ⁇ .2° of a crystallographic axis of the silicon carbide crystal.
  • the implantation may be greater than ⁇ .2° of the crystallographic axis of the silicon carbide crystal, however the implantation may be less effective.
  • the direction of implantation is more than about ⁇ .2° of a crystallographic axis of the silicon carbide crystal, the atoms in the lattice may appear to be randomly distributed relative to the direction of implantation, which may reduce channeling effects.
  • the term "implant angle” refers to the angle between the direction of implantation and a crystallographic axis, such as the c-axis or ⁇ 0001 > axis, of the semiconductor layer into which ions are implanted.
  • an implant angle of less than about 2° relative to the c-axis of a silicon carbide layer may be expected to result in channeling.
  • other implant angles may be utilized as well.
  • the implant energy may be 20keV to 80keV, 80keV to 120keV, 120keV to 160keV, 160keV to 200keV, 200keV to 240keV,
  • the implant dose may be 6E13cm 2 to 8E13cm 2 , 8E13cm 2 to 1.2E13cm 2 , 1 2E13cm 2 to 1 6E13cm 2 , 1.6E13cm 2 to 2E13cm 2 , .6E13cm 2 to2E13cm 2 , and/or 8E13cm 2 to 1.2E13cm 2 .
  • the p-type material layer 106 may be formed by implantation of other materials such as Boron (B), Gallium (Ga), and/or the like, and may be followed by a high temperature anneal.
  • the ion implantation may result in the p-type material layer 106 being a deep layer. In one aspect, the ion implantation may result in the p- type material layer 106 having a thickness of 1 pm or less. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .7 pm or less. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .5 pm or less. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .3 pm to .5 pm.
  • the ion implantation may result in the p-type material layer 106 having a thickness of .2 pm to .6 pm. In one aspect, the ion implantation may result in the p- type material layer 106 having a thickness of .4 pm to .6 pm. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .6 pm to .8 pm. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .6 pm to 1.6 pm. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .6 pm to 2.1 pm.
  • the ion implantation may result in the p-type material layer 106 having a thickness of 1 pm to 5 pm.
  • the p-type material layer 106 implantation and/or doping may be in the range of 5E15 to 5E17 per cm 3 and extend to depths up to 5 pm.
  • the ion implantation may result in the p-type material layer 106 having a thickness of .05% to .3% of a thickness of the substrate layer 102. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .05% to .1% of a thickness of the substrate layer 102. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .1% to .15% of a thickness of the substrate layer 102. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .15% to .2% of a thickness of the substrate layer 102.
  • the ion implantation may result in the p-type material layer 106 having a thickness of .2% to .25% of a thickness of the substrate layer 102. In one aspect, the ion implantation may result in the p-type material layer 106 having a thickness of .25% to .3% of a thickness of the substrate layer 102.
  • the p-type material layer 106 may be implanted within the substrate layer 102 and may be subsequently annealed. Annealing may allow for the implantation to be activated. In one aspect, a masking layer material may be utilized during implantation. In some aspects, during annealing of the p-type material layer 106, a cap layer material may be used to cover the wafer surface to prevent dissociation of the substrate at high temperatures. Once the p-type material layer 106 has been formed, the masking layer material may be removed. Annealing may be performed at a temperature range of 1500 - 1850°C for 5 minutes - 30 minutes. Other annealing time and temperature profiles are contemplated as well.
  • the substrate layer 102 may be made of a p-type material SiC substrate. Further in this aspect, the substrate layer 102 being a p-type material SiC substrate may be subsequently subjected to the processes as described herein including implantation of additional p-type layers.
  • the p-type material layer 106 may be neutralized to limit the length of the p-type material layer 106. In one aspect, neutralizing may include implantation of impurities. In one aspect, neutralizing the p-type material layer 106 may include absorbing the charge of the p-type material layer 106 with a material of opposite polarity.
  • the p-type material layer 106 may be formed by growing the p-type material layer 106. Growth may be epitaxial, for example. To limit the length of the p-type material layer 106, the p-type material layer 106 may be etched or otherwise neutralized. In aspects of the transistor 100 of the disclosure, the substrate layer 102 may be etched and the p- type material layer 106 may be formed by growing the p-type material layer 106. In one aspect, the growth may be epitaxial.
  • the p-type material layer 106 may be an epitaxial layer and may be GaN. In some aspects, the p-type material layer 106 may be an epitaxial layer and may be GaN and the p-type material layer 106 may include magnesium (Mg), carbon (C), and/or Zinc. In some aspects, the p-type material layer 106 may be an epitaxial layer and may be GaN and the p-type material layer 106 may include implantation of magnesium (Mg), carbon (C), and/or Zinc.
  • the substrate layer 102 may be etched and the p-type material layer 106 may be formed by growing the p-type material layer 106.
  • the growth may be epitaxial.
  • the p-type material layer 106 may be an epitaxial layer formed of SiC. In some aspects, the p-type material layer 106 may be an epitaxial layer and may be SiC and the p-type material layer 106 may include Al and/or Br. In some aspects, the p-type material layer 106 may be an epitaxial layer and may be SiC and the p-type material layer 106 may include implantation of Al and/or Br.
  • the p-type material layer 106 may be a graded layer. In one aspect, the p-type material layer 106 may be a step-graded layer. In one aspect, the p-type material layer 106 may be multiple layers. In one aspect, the p-type material layer 106 may be a graded layer. In one aspect, the p-type material layer 106 may be a step-graded layer. In one aspect, the p-type material layer 106 may be multiple layers.
  • the p-type material layer 106 may include a planer upper surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis).
  • the p-type material layer 106 may include a planer lower surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis). Where upper and lower are defined along the Y axis.
  • a nucleation layer 136 may be formed on the substrate layer 102 to reduce a lattice mismatch between the substrate layer 102 and a next layer in the transistor 100.
  • the nucleation layer 136 may be formed directly on the substrate layer 102.
  • the nucleation layer 136 may be formed on the substrate layer 102 with intervening layer(s), such as SiC epitaxial layer(s) formed on a SiC implementation of the substrate layer 102.
  • the nucleation layer 136 may be formed on the substrate layer 102 using known semiconductor growth techniques such as Metal Oxide Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Molecular Beam Epitaxy (MBE), or the like.
  • MOCVD Metal Oxide Chemical Vapor Deposition
  • HVPE Hydride Vapor Phase Epitaxy
  • MBE Molecular Beam Epitaxy
  • the nucleation layer is Aluminum Nitride (AIN) or Aluminum Gallium Nitride (AIGaN), such as undoped AIN or AIGaN.
  • a buffer layer 104 may be formed directly on the nucleation layer 136 or on the nucleation layer 136 with intervening layer(s).
  • the buffer layer 104 is formed of GaN.
  • the buffer layer 104 or portions thereof may be doped with dopants, such as, Fe and/or C or alternatively can be wholly or partly undoped.
  • the buffer layer 104 is directly on the substrate layer 102.
  • the buffer layer 104 may include a planer upper surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis).
  • the buffer layer 104 may include a planer lower surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis). Where upper and lower are defined along the Y axis.
  • the buffer layer 104 may include an upper portion of high purity GaN and the buffer layer 104 may also include a lower portion that may form an AIGaN back barrier to achieve better electron confinement.
  • the lower portion that forms the back barrier may be AIGaN of n type.
  • the back barrier construction may be implemented in any of the aspects of the disclosure.
  • the buffer layer 104 may be high purity GaN. In one aspect, the buffer layer 104 may be high purity GaN that may be a low-doped n-type. In one aspect, the buffer layer 104 may also use a higher band gap Group Ill-nitride layer as a back barrier, such as an AIGaN back barrier, on the other side of the buffer layer 104 from a barrier layer 108 to achieve better electron confinement.
  • a back barrier such as an AIGaN back barrier
  • the buffer layer 104 may have a buffer layer thickness defined as a distance between an upper surface of the substrate layer 102 and a lower surface of the barrier layer 108. In one aspect, the buffer layer thickness may be less than .8 microns, less than .7 microns, less than .6 microns, less than .5 microns, or less than .4 microns.
  • the buffer layer thickness may have a range of .8 microns to .6 microns, .7 microns to .5 microns, .6 microns to .4 microns, .5 microns to .3 microns, .4 microns to .2 microns, or .7 microns to .3 microns.
  • the transistor 100 may have an intervening layer(s) thickness defined as a length between an upper surface of the substrate layer 102 and a lower surface of the barrier layer 108.
  • the intervening layer(s) thickness may be less than .8 microns, less than .7 microns, less than .6 microns, less than .5 microns, or less than .4 microns.
  • the intervening layer(s) thickness may have a range of .8 microns to .6 microns, .7 microns to .5 microns, .6 microns to .4 microns, .5 microns to .3 microns, or .4 microns to .2 microns.
  • the barrier layer 108 may be formed on the buffer layer 104.
  • the barrier layer 108 may be formed directly on the buffer layer 104, and in other aspects, the barrier layer 108 is formed on the buffer layer 104 with intervening layer(s).
  • the barrier layer 108 may be AIGaN, and in another aspect the barrier layer 108 is AIN. In one aspect, the barrier layer 108 may be undoped. In one aspect, the barrier layer 108 may be doped. In one aspect, the barrier layer 108 may be an n-type material. In some aspects, the barrier layer 108 may have multiple layers of n-type material having different carrier concentrations. In one aspect, the barrier layer 108 may be a Group Ill-nitride or a combination thereof.
  • the barrier layer 108 may include a planer upper surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis).
  • the barrier layer 108 may include a planer lower surface that is generally parallel to an X axis as illustrated in Figure 1 and/or is generally parallel to an Z axis (perpendicular to the X axis and the Y axis). Where upper and lower are defined along the Y axis.
  • a bandgap of the buffer layer 104 may be less than a bandgap of the barrier layer 108 to form a two-dimensional electron gas (2DEG) at a heterointerface 152 between the buffer layer 104 and barrier layer 108 when biased at an appropriate level.
  • a bandgap of the buffer layer 104 that may be GaN may be less than a bandgap of the barrier layer 108 that may be AIGaN to form the two-dimensional electron gas (2DEG) at a heterointerface 152 between the buffer layer 104 and barrier layer 108 when biased at an appropriate level.
  • the heterointerface 152 may be between the barrier layer 108 and the buffer layer 104.
  • source 110 and drain 112 electrodes may be formed making ohmic contacts such that an electric current flows between the source 110 and the drain 112 electrodes via a two- dimensional electron gas (2DEG) induced at the heterointerface 152 between the buffer layer 104 and barrier layer 108 when a gate 114 electrode is biased at an appropriate level.
  • the heterointerface 152 may be in the range of .005 pm to .007 pm, .007 pm to .009 pm, and .009 pm to .011 pm.
  • the source 110, the drain 112 and the gate 114 may be formed on the barrier layer 108.
  • the source 110, the drain 112, and/or the gate 114 may be arranged directly on the barrier layer 108 or may be on intervening layer(s) on the barrier layer 108, such as an AIGaN layer on an AIN barrier layer. Other or additional intervening layers are possible.
  • a spacer layer 116 of SiN, AIO, SiO, S1O2, AIN, or the like or combinations thereof can be provided on the barrier layer 108 or other intervening layers.
  • the barrier layer 108 may include a region 164 under the source 110 and/or the drain 112 that is a N+ material.
  • the barrier layer 108 may include a region 164 under the source 110 and/or drain 112 that is Si doped.
  • the n-type dopants in the region 164 are implanted.
  • the source 110, the drain 112 and the gate 114 may be formed on the buffer layer 104.
  • the source 110, the drain 112, and/or the gate 114 may be arranged directly on the buffer layer 104 or may be on intervening layer(s) on the buffer layer 104, such as an AIGaN layer on an AIN barrier layer.
  • the buffer layer 104 may include a region 164 under the source 110 and/or the drain 112 that is a N+ material.
  • the buffer layer 104 may include a region 164 under the source 110 and/or drain 112 that is Si doped.
  • the n-type dopants in the region 164 are implanted.
  • the source 110 and the drain 112 may be symmetrical with respect to the gate 114. In some switch device application aspects, the source 110 and the drain 112 may be symmetrical with respect to the gate 114.
  • the source 110 and the drain 112 may be asymmetrical with respect to the gate 114.
  • the gate 114 may be a T-shaped gate. In one aspect, the gate 114 may be a non-T shaped gate.
  • a spacer layer 116 may be arranged on the barrier layer 108, on a side opposite the buffer layer 104, adjacent the gate 114, the drain 112 and the source 110.
  • the spacer layer 116 may be a passivation layer made of SiN, AIO, SiO, S1O2, AIN, or the like, or a combination incorporating multiple layers thereof.
  • the spacer layer 116 is a passivation layer made of SiN.
  • the spacer layer 116 can be deposited using MOCVD, plasma chemical vapor deposition (CVD), hot-filament CVD, or sputtering.
  • the spacer layer 116 may include deposition of ShN4.
  • the spacer layer 116 forms an insulating layer. In one aspect, the spacer layer 116 forms an insulator. In one aspect, the spacer layer 116 may be a dielectric. In one aspect, a spacer layer 116 may be provided on the barrier layer 108. In one aspect, the spacer layer 116 may include non-conducting material such as a dielectric. In one aspect, the spacer layer 116 may include a number of different layers of dielectrics or a combination of dielectric layers. In one aspect, the spacer layer 116 may be many different thicknesses, with a suitable range of thicknesses being approximately 0.05 to 2 microns.
  • the gate 114 may be deposited in a channel formed in the spacer layer 116, and a T-gate may be formed using semiconductor processing techniques understood by those of ordinary skill in the art. Other gate configurations are possible.
  • the substrate layer 102 may be silicon carbide and include a carbon face.
  • the substrate layer 102 may be silicon carbide and include a carbon face arranged adjacent the buffer layer 104.
  • the substrate layer 102 may be silicon carbide and include a carbon face and the substrate layer 102 may be flipped so as to be arranged adjacent the buffer layer 104.
  • the buffer layer 104 may be GaN having a nitrogen face adjacent the carbon face of the substrate layer 102.
  • the buffer layer 104 may be GaN having alternating GaN and N layers with a N layer and/or a nitrogen face adjacent the carbon face of the substrate layer 102.
  • the buffer layer 104 may include nonpolar GaN. In one aspect, the buffer layer 104 may include semipolar GaN. In one aspect, the buffer layer 104 may include hot wall epitaxy. In one aspect, the buffer layer 104 may include hot wall epitaxy having a thickness in the range of .15 microns to .25 microns, .2 microns to .3 microns, .25 microns to .35 microns, .3 microns to .35 microns, .35 microns to .4 microns, .4 microns to .45 microns, .45 microns to .5 microns, .5 microns to .55 microns, or .15 microns to .55 microns.
  • the p-type material layer 106 may help avoid breakdowns and problems with material impurities. For example, without a p-type material layer 106, the transistor 100 may need impurities, which do not discharge well.
  • the p-type material layer 106 may be formed beneath the gate 114, and may extend toward the source 110 and the drain 112 of the device.
  • the buffer layer 104 may be designed to be of the high purity type where the Fermi level is in the upper half of the bandgap, which minimizes slow trapping effects normally observed in GaN HEMTs. In this regard, the traps under the Fermi level are filled always and thus slow transients may be prevented.
  • the buffer layer 104 may be as thin as possible consistent with achieving good crystalline quality. Applicants have already demonstrated 0.4 pm layers with good quality.
  • MOCVD Metalorganic Chemical Vapor Deposition
  • HVPE Hydride Vapor Phase Epitaxy
  • MBE Molecular Beam Epitaxy
  • the buffer layer 104 may be formed with Lateral Epitaxial Overgrowth (LEO).
  • LEO can, for example, improve the crystalline quality of GaN layers.
  • the layer upon which each epitaxial layer is grown may affect the characteristics of the device. For example, LEO may reduce dislocation density in epitaxial GaN layers.
  • the transistor 100 may include a second spacer layer 117 that may be formed on the spacer layer 116 and the gate 114.
  • the transistor 100 may include a field plate 132.
  • the transistor 100 may include a connection 154 to the field plate 132.
  • Figure 2 shows a cross-sectional view of an aspect of a transistor according to the disclosure.
  • the p-type material layer 106 may not extend over the entire area of the transistor 100.
  • the p-type material layer 106 may be selectively arranged as described herein, the p-type material layer 106 may be arranged over the entire length and selectively removed as described herein, the p-type material layer 106 may be arranged over the entire length and selectively electrically neutralized as described herein, or the like. Accordingly, the specific constructions of the p-type material layer 106 described below encompass any of these processes that result in the p-type material layer 106 having an operating construction and arrangement as noted below.
  • the length and/or size of the p-type material layer 106 does not include a part that is partially electrically neutralized, partially etched, or the like.
  • the length and/or size of the p-type material layer 106 may depend on the application of the transistor 100, requirements for the transistor 100, and the like. Limiting a length of the p-type material layer 106 reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the p-type material layer 106 may be present in limited areas as described in further detail below.
  • the p-type material layer 106 may be present in a gate - source region.
  • the p- type material layer 106 may be present in a gate - source region and also partly under the gate 114.
  • the p-type material layer 106 may be arranged at least partially under the gate 114 and/or the source 110.
  • the p- type material layer 106 may be arranged at least partially under the gate 114 and/or and not arranged under the source 110.
  • the p-type material layer 106 may be arranged at least partially vertically under the gate 114 along the y-axis and may extend along the x-axis partially toward the source 110 and the drain 112. In this aspect, no portion of the p-type material layer 106 may be located vertically along the y-axis below the source 110; and no portion of the p-type material layer 106 may be located vertically along the y-axis below the source 110. In this aspect, a portion of the substrate layer 102 may be free of the p-type material layer 106 on a source side of the transistor 100; and a portion of the substrate layer 102 may be free of the p-type material layer 106 on a drain side of the transistor 100.
  • a source side of the transistor 100 is defined as a side of the transistor 100 extending from the gate 114 toward and past the source 110 as illustrated in Figure 2; and a drain side of the transistor 100 is defined as a side of the transistor 100 extending from the gate 114 toward and past the drain 112 as illustrated in Figure 2.
  • the p-type material layer 106 may be arranged at least partially vertically under the gate 114 along the y-axis and may extend along the x-axis partially toward the source 110 and the drain 112. In this aspect, only a portion of the p-type material layer 106 may be located vertically along the y-axis below the source 110; and no portion of the p-type material layer 106 may be located vertically along the y-axis below the source 110. In this aspect, a portion of the substrate layer 102 may not include the p-type material layer 106 located vertically along the y-axis below the source 110.
  • a portion of the substrate layer 102 may be free of the p-type material layer 106 on a source side of the transistor 100; and a portion of the substrate layer 102 may be free of the p-type material layer 106 on a drain side of the transistor 100.
  • the p-type material layer 106 may be arranged at least partially vertically under the gate 114 along the y-axis and may extend along the x-axis partially toward the source 110 and the drain 112. In this aspect, a portion of the p-type material layer 106 may be located vertically along the y-axis entirely below the source 110; and no portion of the p-type material layer 106 may be located vertically along the y-axis below the drain 112. In this aspect, a portion of the substrate layer 102 may not include the p-type material layer 106 located vertically along the y-axis past the source 110. In this aspect, a portion of the substrate layer 102 may be free of the p-type material layer 106 on a source side of the transistor 100; and a portion of the substrate layer 102 may be free of the p-type material layer
  • the p-type material layer 106 may be arranged vertically under the gate 114 along the y-axis and may extend along the x-axis partially toward the source 110 and the drain 112. In this aspect, a portion of the p- type material layer 106 may be located vertically along the y-axis entirely below the source 110; and no portion of the p-type material layer 106 may be located vertically along the y-axis below the source 110. In this aspect, a portion of the substrate layer 102 may not include the p-type material layer 106 located vertically along the y-axis past the source 110.
  • a portion of the substrate layer 102 may be free of the p-type material layer 106 on a source side of the transistor 100; and a portion of the substrate layer 102 may be free of the p-type material layer 106 on a drain side of the transistor 100.
  • the gate 114 may have a width LG along a lower surface of the gate 114 that is adjacent the barrier layer 108 that is parallel to the X axis.
  • the width LG may extend from one lower corner of the gate 114 to the other lower corner of the gate 114.
  • the definition of the width LG is illustrated in Figure 2.
  • the width LG may be between .05 pm and .6 pm, .5 pm and .6 pm, .4 pm and .5 pm, .3 pm and .4 pm, .2 pm and .3 pm, .1 pm and .2 pm, or .1 pm and .05 pm in length along the x-axis.
  • a width of the gate 114 above a lower surface may be greater than the width LG as illustrated in Figure 2.
  • the distance from the gate 114 to the source 110 may be defined as distance LGS.
  • the distance LGS may be defined as a distance from a lower corner of the gate 114 on a source side to a lower corner of the source 110 on a gate side.
  • the definition of the distance LGS is illustrated in Figure 2.
  • the distance from the gate 114 to the drain 112 may be defined as the distance LGD.
  • the distance LGD may be defined as a distance from a lower corner of the gate 114 on a drain side to a lower corner of the drain 112 on a gate side.
  • the definition of the distance LGD is illustrated in Figure 2.
  • the p-type material layer 106 may extend laterally along the x-axis from at least beneath the lower corner of the gate 114 on a source side toward the source 110 a distance LGPS.
  • the definition of the distance LGPS is illustrated in Figure 2.
  • the distance LGPS may be between 1 pm and 6 pm, 5 pm and 6 pm, 4 pm and 5 pm, 3 pm and 4 pm, 2 pm and 3 pm, or 1 pm and 3 pm in length along the x-axis.
  • the p-type material layer 106 may extend laterally along the x-axis from at least beneath the lower corner of the gate 114 on a drain side toward the drain 112 a distance LGPD.
  • the distance LGPD may be between .1 pm and .6 pm, .5 pm and .6 pm, .4 pm and .5 pm, .3 pm and .4 pm, .2 pm and .3 pm, or .1 pm and .3 pm in length along the x-axis.
  • a length of the p-type material layer 106 may be a sum of the distance LGPD, the width LG, and the distance LGPS.
  • a length of the p-type material layer 106 reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the length LGPS may be 100% to 700% of LG, 100% to 200% of LG, 200% to 300% of LG, 300% to 400% of LG, 400% to 500% of LG, 500% to 600% of LG, or 600% to 700% of LG.
  • the length LG may be 10% to 180% of LGPD, 10% to 20% of LGPD, 20% to 30% of LGPD, 30% to 40% of LGPD, 40% to 50% of LGPD, 50% to 60% of LGPD, 60% to 70% of LGPD, 70% to 80% of LGPD, 80% to 90% of LGPD, 90% to 100% of LGPD, 100% to 110% of LGPD, 110% to 120% of LGPD, 110% to 130% of LGPD, 130% to 140% of LGPD, 140% to 150% of LGPD, 150% to 160% of LGPD, 160% to 170% of LGPD, or 170% to 180% of LGPD.
  • the length LGS may be 10% to 180% of LGPS, 10% to 20% of LGPS, 20% to 30% of LGPS, 30% to 40% of LGPS, 40% to 50% of LGPS, 50% to 60% of LGPS, 60% to 70% of LGPS, 70% to 80% of LGPS, 80% to 90% of LGPS, 90% to 100% of LGPS, 100% to 110% of LGPS, 110% to 120% of LGPS, 110% to 130% of LGPS, 130% to 140% of LGPS, 140% to 150% of LGPS, 150% to 160% of LGPS, 160% to 170% of LGPS, or 170% to 180% of LGPS.
  • the length LG may be 10% to 180% of LGPD, 10% to 20% of LGPD, 20% to 30% of LGPD, 30% to 40% of LGPD, 40% to 50% of LGPD, 50% to 60% of LGPD, 60% to 70% of LGPD, 70% to 80% of LGPD, 80% to 90% of LGPD, 90% to 100% of LGPD, 100% to 110% of LGPD, 110% to 120% of LGPD, 110% to 130% of LGPD, 130% to 140% of LGPD, 140% to 150% of LGPD, 150% to 160% of LGPD, 160% to 170% of LGPD, or 170% to 180% of LGPD.
  • the p-type material layer 106 may be under .6 pm in thickness. In some aspects, the p-type material layer 106 may be under .5 pm in thickness. In some aspects, the p-type material layer 106 may be under .4 pm in thickness. In some aspects, the p-type material layer 106 may be under .3 pm in thickness. In some aspects, the p-type material layer 106 may be under .2 pm in thickness. In some aspects, the p-type material layer 106 may be between .1 and .6 pm in thickness. In some aspects, the p-type material layer 106 may be between .5 and .6 mih in thickness.
  • the p-type material layer 106 may be between .4 and .5 pm in thickness. In some aspects, the p-type material layer 106 may be between .3 and .4 pm in thickness. In some aspects, the p-type material layer 106 may be between .2 and .3 pm in thickness. In some aspects, the p-type material layer 106 may be between .1 and .3 pm in thickness. In some aspects, the p-type material layer 106 may be between .05 and .25 pm in thickness. In some aspects, the p-type material layer 106 may be between .15 and .25 pm in thickness.
  • a part of a source side of the substrate layer 102 may be free of the p-type material layer 106. In one or more aspects, a part of a drain side of the substrate layer 102 may be free of the p-type material layer 106. In one or more aspects, a part of a source side of the substrate layer 102 may be free of the p-type material layer 106 and a part of a drain side of the substrate layer 102 may be free of the p-type material layer 106. In one or more aspects, the p-type material layer 106 may be arranged under and across a length of the gate 114 and may extend toward the source 110 and the drain 112.
  • a distance LGD may be a distance from a lower corner of the gate 114 on the drain 112 side to a lower corner of the drain 112 on a gate side;
  • a distance LGS may be a distance from a lower corner of the gate 114 on the source 110 side to a lower corner of the source 110 on a gate side; and the distance LGD may be greater than the distance LGS.
  • a distance LGPS may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the source 110 side toward the source 110; a distance LGPD may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the drain 112 side toward the drain 112; and the distance LGPS may be equal to the distance LGPD.
  • a distance LGPS may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the source 110 side toward the source 110; a distance LGPD may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the drain 112 side toward the drain 112; and the distance LGPS may be greater than the distance LGPD.
  • a distance LGPS may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the source 110 side toward the source 110; a distance LGPD may define a length of a portion of the p-type material layer 106 from a lower corner of the gate 114 on the drain 112 side toward the drain 112; and the distance LGPD may be greater than the distance LGPS.
  • the p-type material layer 106 may extend toward the source 110 but does not vertically overlap the source 110. In one or more aspects, the p-type material layer 106 may vertically overlap the source 110. In one or more aspects, the p-type material layer 106 may extend toward the drain 112 but does not vertically overlap the drain 112. In one or more aspects, the p-type material layer 106 may vertically overlap the drain 112. In one or more aspects, the p-type material layer 106 may be electrically connected to the gate 114. In one or more aspects, the gate 114 may be electrically connected to any external circuit or voltage. In one or more aspects, the p-type material layer 106 may have no direct electrical connections. In one or more aspects, the p-type material layer 106 may be electrically connected to the source 110.
  • part of the voltage from a drain 112 to a source 110 may be dropped in the p-type material layer 106 region. This may also deplete the channel in the lateral direction. The lateral depletion may reduce the lateral field and increase breakdown voltage. Alternatively, a more compact structure can be obtained for a required breakdown voltage.
  • the p-type material layer 106 may eliminate the need to have C or Fe doping of the buffer needed to sustain the applied drain voltage. Elimination of C and Fe leads to decreased current reduction under operating conditions (no trapping). Moreover, in some aspects the p-type material layer 106 may support the field.
  • the p-type material layer 106 may also be configured to have a varying doping and/or implantation profile perpendicular to the surface. In some aspects, the p-type material layer 106 may also be configured to have a varying profile perpendicular to the surface extending into the cross-sectional views of the Figures. The profile may be optimized to achieve desired breakdown voltage, device size, switching time, and the like.
  • Figure 3 illustrates a semiconductor device that may include a plurality of unit cell transistors in accordance with an aspect of the disclosure.
  • aspects of the disclosure may include a semiconductor device 400 that may include a plurality of the transistor 100.
  • the transistor 100 may be one of a plurality of unit cells 430 implemented in the semiconductor device 400.
  • Figure 3 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 3 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 3 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the semiconductor device 400 may include a gate bus 402 that may be connected to a plurality of gate fingers 406 that may extend in parallel in a first direction (e.g., the Z-direction indicated in Figure 3) that connect to or form part of the gate 114.
  • a source bus 410 may be connected to a plurality of parallel ones of source contacts 416 that connect to or form part of the source 110.
  • the source bus 410 may be connected to a ground voltage node on an underside of the semiconductor device 400.
  • a drain bus 420 may be connected to a plurality of drain contacts 426 that connect to or form part of the drain 112.
  • each gate finger 406 may run along the Z-direction between a pair of adjacent ones of the source contact 416 and the drain contact 426.
  • the semiconductor device 400 may include a plurality of unit cells 430, where each one of the plurality of unit cells 430 includes an implementation of the transistor 100.
  • One of the plurality of unit cells 430 is illustrated by the dashed Box in Figure 3, and includes a gate finger 406 that extends between adjacent ones of the source contact 416 and the drain contact 426.
  • gate width refers to the distance by which the gate finger 406 overlaps with its associated one of the source contact 416 and drain contact 426 in the Z-direction. That is, “width” of a gate finger 406 refers to the dimension of the gate finger 406 that extends in parallel to and adjacent an implementation of the source contact 416 and the drain contact 426 (the distance along the Z-direction).
  • Each of the plurality of unit cells 430 may share one of the source contact 416 and/or the drain contact 426 with one or more adjacent ones of the plurality of unit cells 430. Although a particular number of the of the plurality of unit cells 430 is illustrated in Figure 3, it will be appreciated that the semiconductor device 400 may include more or less of the plurality of unit cells 430.
  • Figure 4 is a schematic cross-sectional view taken along line IV-IV of Figure 3.
  • the semiconductor device 400 may include a semiconductor structure 440 that includes the substrate layer 102, the buffer layer 104, the barrier layer 108, and/or the like as described herein.
  • the source contact 416 and the drain contact 426 may be on the barrier layer 108 as described herein.
  • the gate fingers 406 may be on the substrate layer 102 between the source contacts 416 and the drain contacts 426 as described herein. While the gate fingers 406, the source contact 416, and the drain contacts 426 are all shown schematically in Figure 3 and Figure 4 as having a similar "dimension," it will be appreciated that each may have different shapes and dimensions consistent with the disclosure.
  • Figure 5 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 5 illustrates a configuration of the transistor 100 and/or the semiconductor device 400 in order to reduce and/or eliminate trapping within the transistor 100 associated with “gate lag effect.”
  • the gate lag affect may occur particularly at high negative gate voltages.
  • Figure 5 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 5 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 5 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the p-type material layer 106 may be electrically connected at one end of the gate fingers 406, at both ends of the gate fingers 406, at one end of a plurality of the gate fingers 406, at both ends of a plurality of the gate fingers 406, at one end of every one of the gate fingers 406, at both ends of every one of the gate fingers 406, and/or the like.
  • the p-type material layer 106 may be electrically connected at one end of the gate 114, at both ends of the gate 114, at one end of a plurality of the gate 114, at both ends of a plurality of the gate 114, at one end of every one of the gate 114, at both ends of every one of the gate 114, and/or the like.
  • the gate 114 and/or the gate fingers 406 may be connected to the p-type material layer 106 with a connection 550.
  • the connection 550 may be achieved by etching down to the p-type material layer 106 near one or more of the ends of the gate fingers 406 and/or the gate 114 and making a metal contact to the p-type material layer 106. This metal may then be connected to the gate 114 and/or the gate fingers 406 metal electrically.
  • the connection 550 may be implemented at least in part as a via.
  • the via may extend through one or more layers of the transistor 100.
  • the via may extend through one or more of the second spacer layer 117, the spacer layer 116, the barrier layer 108, the buffer layer 104, and/or the like.
  • connection 550 may have a p-type material contact on the p-type material layer 106.
  • the p-type material contact may be formed on the p-type material layer 106 in a recess provided in the buffer layer 104, the barrier layer 108, and/or the like.
  • the p-type material contact may be electrically coupled to the p-type material layer 106.
  • the recess may extend down to the p-type material layer 106 to allow for the p-type material contact to be created there.
  • the recess may be formed by etching the buffer layer 104, the barrier layer 108, and/or the like, and may also use a material to define the recess. The material may be removed after the recess has been created.
  • connection 550 may include a connection to the p-type material layer 106, to the gate 114, and/or to the gate fingers 406.
  • connection 550 or portions thereof may extend from the p-type material layer 106 and/or the p-type material contact in the recess formed in the transistor 100 and may extend up to the gate 114 and/or to the gate fingers 406.
  • connection 550 and/or the p-type material contact may be electrically coupled to the p-type material layer 106.
  • the recess may be configured as a partial recess, partial trench, or the like in a surface of the transistor 100.
  • a region or area under or adjacent the p-type material contact may be implanted and/or doped with p-dopants to form an electrical connection with the p- type material layer 106.
  • the layer may be an epitaxial material on which is provided the p-type material contact.
  • connection 550 may include a conductive material, many different conductive materials, a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the materials may include one or more of titanium, gold, nickel, or the like.
  • Figure 6 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 6 illustrates a configuration of the transistor 100 in order to reduce and/or eliminate trapping within the transistor 100 associated with “gate lag effect.”
  • the gate lag affect may occur particularly at high negative gate voltages.
  • Figure 6 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 6 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 6 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the transistor 100 may include a connection 650.
  • the connection 650 may be achieved by etching down to the p-type material layer 106 near the ends of the gate fingers 406 and making a metal contact to the p-type material layer 106.
  • the connection 650 may be implemented at least in part as a via.
  • the via may extend through one or more layers of the transistor 100.
  • the via may extend through one or more of the second spacer layer 117, the spacer layer 116, the barrier layer 108, the buffer layer 104, and/or the like.
  • the connection 650 may include a contact 652 electrically connected to receive an external signal or bias. In one aspect, a negative voltage may be applied to the contact 652.
  • the applied negative voltage may be more negative than a negative gate bias. In one aspect, the applied negative voltage may be - 5 V to - 75 V, - 5 V to - 15 V, - 15 V to - 25 V, - 25 V to - 35 V, - 35 V to - 45 V, - 45 V to - 55 V, - 55 V to - 65 V, and/or - 65 V to - 75 V.
  • connection 650 may be arranged at one end of the gate fingers 406, at both ends of the gate fingers 406, at one end of a plurality of the gate fingers 406, at both ends of a plurality of the gate fingers 406, at one end of every one of the gate fingers 406, at both ends of every one of the gate fingers 406, and/or the like.
  • connection 650 may be arranged at one end of the gate 114, at both ends of the gate 114, at one end of a plurality of the gate 114, at both ends of a plurality of the gate 114, at one end of every one of the gate 114, at both ends of every one of the gate 114, and/or the like.
  • connection 650 may have a p-type material contact on the p-type material layer 106.
  • the p-type material contact may be formed on the p-type material layer 106 in a recess provided in the buffer layer 104, the barrier layer 108, and/or the like.
  • the p-type material contact may be electrically coupled to the p-type material layer 106.
  • the recess may extend down to the p-type material layer 106 to allow for the p-type material contact to be created there.
  • the recess may be formed by etching the buffer layer 104, the barrier layer 108, and/or the like, and may also use a material to define the recess. The material may be removed after the recess has been created.
  • connection 650 may include a connection to the p-type material layer 106 and/or the contact 652.
  • connection 650 or portions thereof may extend from the p-type material contact in the recess formed in the transistor 100 and may extend up to the contact 652.
  • connection 650, the contact 652, and/or the p-type material contact may be electrically coupled to the p-type material layer 106.
  • the recess may be configured as a partial recess, partial trench, or the like in a surface of the transistor 100.
  • a region or area under or adjacent the p-type material contact may be implanted and/or doped with p-dopants to form an electrical connection with the p-type material layer 106.
  • the layer may be an epitaxial material on which is provided the p-type material contact.
  • the contact 652 may be configured as a contact pad.
  • the p-type material layer 106 through the connection 650 and/or the contact 652 may receive its own bias and signals.
  • the p-type material layer 106 may be used to modulate characteristics of the transistor 100.
  • the connection 650 and/or the contact 652 may include a conductive material, many different conductive materials, a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the materials may include one or more of titanium, gold, nickel, or the like.
  • connection 650 may be a metallic connection that extends from the p-type material contact to the contact 652.
  • the contact 652 may be a buried contact pad. In this regard, the contact 652 may be buried in any one of the above-noted structures of the transistor 100.
  • the contact 652 may be arranged on the barrier layer 108. In one aspect, the contact 652 may be arranged directly on the barrier layer 108. In one aspect, the contact 652 may be arranged on a spacer layer 116 on the barrier layer 108. In one aspect, the contact 652 may be separate and separated from the gate 114, the source 110, and/or the drain 112.
  • Figure 7 illustrates a top view of one aspect of a transistor according to the disclosure.
  • Figure 7 illustrates a configuration of the transistor 100 in order to reduce and/or eliminate trapping within the transistor 100 associated with “gate lag effect.”
  • the gate lag affect may occur particularly at high negative gate voltages.
  • Figure 7 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 7 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 7 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the transistor 100 may include the connection 650 and/or the contact 652 as described with reference to Figure 6.
  • Figure 7 illustrates that the transistor 100 may further include a radiofrequency circuit 702.
  • the radiofrequency circuit 702 may be configured to prevent flow of RF current through the connection 650 and/or the contact 652.
  • the radiofrequency circuit 702 may be configured as a radiofrequency choke.
  • the radiofrequency circuit 702 may be implemented as one or more resistors, one or more capacitors, one or more inductors, one or more resistor circuits, one or more capacitor circuits, one or more inductor circuits, and/or the like.
  • the radiofrequency circuit 702 may connect to the contact 652 and also connect to a negative voltage bias in series with an inductor; and one end of the inductor may connect to ground in series with a capacitor.
  • the applied negative voltage may be - 5 V to - 75 V, - 5 V to - 15 V, - 15 V to - 25 V, - 25 V to - 35 V, - 35 V to - 45 V, - 45 V to - 55 V, - 55 V to - 65 V, and/or - 65 V to - 75 V.
  • the radiofrequency circuit 702 may be implemented as an integrated passive devices (I PD) and/or Integrated Passive Components (I PC).
  • the radiofrequency circuit 702 implemented as an I PD may implement or support various radio frequency (RF) passive devices.
  • the radiofrequency circuit 702 implemented as an IPD may implement or support various functional technology including providing one or more of resistance, inductance, capacitance, impedance matching circuits, matching circuits, input matching circuits, output matching circuits, harmonic filters, harmonic terminations, couplers, baluns, power combiners, power dividers, radio frequency (RF) circuits, radial stub circuits, transmission line circuits, fundamental frequency matching circuits, baseband termination circuits, second order harmonic termination circuits, and the like.
  • the radiofrequency circuit 702 implemented as an IPD may implement or support various functional technology as input, output, and/or intrastage functions to the active region, an RF circuit, and/or the like.
  • the radiofrequency circuit 702 implemented as an IPD may refer to implementations that they include an integrated circuit, which may be semiconductor based, and may include a number of passive devices. A custom circuit topology may be provided by the IPD.
  • the radiofrequency circuit 702 implemented as an IPD may be used to provide some or all of the passive components for an impedance matching circuit, a matching circuit, an input matching circuit, an output matching circuit, a harmonic filter, a harmonic termination, a coupler, a balun, a power combiner, a power divider, a radio frequency (RF) circuit, a radial stub circuit, a transmission line circuit, a fundamental frequency matching circuit, a baseband termination circuit, a second order harmonic termination circuit, and the like.
  • RF radio frequency
  • Figure 8 shows a cross-sectional view of another aspect of a transistor according to the disclosure.
  • Figure 8 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 8 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 8 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • Figure 8 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 8 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 8 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • Figure 8 further illustrates implementation of the second spacer layer 117.
  • the second spacer layer 117 may be provided over the gate 114 and/or the spacer layer 116.
  • the second spacer layer 117 may be a passivation layer made of SiN, AIO, SiO, S1O2, AIN, or the like, or a combination incorporating multiple layers thereof.
  • the second spacer layer 117 is a passivation layer made of SiN.
  • the second spacer layer 117 can be deposited using MOCVD, plasma chemical vapor deposition (CVD), hot-filament CVD, or sputtering.
  • the second spacer layer 117 may include deposition of S13N4.
  • the second spacer layer 117 forms an insulating layer.
  • the second spacer layer 117 forms an insulator.
  • the second spacer layer 117 may be a dielectric.
  • a second spacer layer 117 may be provided on the spacer layer 116.
  • Figure 9 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 9 may include the p-type material layer 106 as described above.
  • Figure 9 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 9 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 9 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • Figure 9 further illustrates implementation of the field plate 132.
  • the field plate 132 may be arranged on the second spacer layer 117 between the gate 114 and drain 112. In one aspect, the field plate 132 may be deposited on the second spacer layer 117 between the gate 114 and the drain 112.
  • the field plate 132 may be electrically connected to one or more other components in the transistor 100. In one aspect, the field plate 132 may not be electrically connected to any other components of the transistor 100. In some aspects, the field plate 132 may be adjacent the gate 114 and a second spacer layer 117 of dielectric material may be included at least partially over the gate 114 to isolate the gate 114 from the field plate 132. In some aspects, the field plate 132 may overlap the gate 114 and a second spacer layer 117 of dielectric material may be included at least partially over the gate 114 to isolate the gate 114 from the field plate 132.
  • the field plate 132 may extend different distances from the edge of the gate 114, with a suitable range of distances being approximately 0.1 to 2 microns.
  • the field plate 132 may include many different conductive materials with a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the field plate 132 may include titanium, gold, nickel, titanium/gold, nickel/gold, or the like.
  • the field plate 132 may be formed on the second spacer layer 117 between the gate 114 and the drain 112, with the field plate 132 being in proximity to the gate 114 but not overlapping the gate 114.
  • a space between the gate 114 and field plate 132 may be wide enough to isolate the gate 114 from the field plate 132, while being small enough to maximize a field effect provided by the field plate 132.
  • the field plate 132 may reduce a peak operating electric field in the transistor 100. In certain aspects, the field plate 132 may reduce the peak operating electric field in the transistor 100 and may increase the breakdown voltage of the transistor 100. In certain aspects, the field plate 132 may reduce the peak operating electric field in the transistor 100 and may reduce trapping in the transistor 100. In certain aspects, the field plate 132 may reduce the peak operating electric field in the transistor 100 and may reduce leakage currents in the transistor 100.
  • the spacer layer 116 is formed on the barrier layer 108 and on the gate 114.
  • the field plate 132 can be formed directly on the spacer layer 116.
  • Other multiple field plate configurations are possible with the field plate 132 overlapping or non-overlapping with the gate 114 and/or multiple field plates 132 being used.
  • Figure 10 shows a cross-sectional view of another aspect of a transistor according to the disclosure.
  • Figure 10 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 10 may include the p-type material layer 106 as described above.
  • Figure 10 further illustrates implementation of the field plate 132 that may be electrically connected to the source 110 through a connection 154.
  • Figure 10 illustrates a transistor 100 that may include any one or more aspects of the disclosure described herein.
  • the transistor 100 of Figure 10 may include the p-type material layer 106 as described above.
  • the transistor 100 of Figure 10 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • connection 154 may be formed on the spacer layer 116 and/or the second spacer layer 117 to extend between the source 110 and the field plate 132.
  • the connection 154 may include a conductive material, many different conductive materials, a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the materials may include one or more of titanium, gold, nickel, or the like.
  • the transistor 100 of Figure 10 illustrates the field plate 132 connected to the source 110 through the connection 154 (source - field plate interconnect).
  • the connection 154 may be formed on the spacer layer 116 and/or the second spacer layer 117 to extend between the field plate 132 and the source 110.
  • the connection 154 may be formed with the field plate 132 during the same manufacturing step.
  • a plurality of the connection 154 may be used.
  • a plurality of the field plates 132 may be used.
  • a plurality of the field plates 132 may be used and each of the plurality of field plates 132 may be stacked with a dielectric material therebetween.
  • connection 154 may include a conductive material, many different conductive materials, a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the materials may include one or more of titanium, gold, nickel, or the like.
  • the gate 114 may be formed of platinum (Pt), nickel (Ni), and/or gold (Au), however, other metals known to one skilled in the art to achieve the Schottky effect, may be used.
  • the gate 114 may include a Schottky gate contact that may have a three- layer structure. Such a structure may have advantages because of the high adhesion of some materials.
  • the gate 114 may further include an overlayer of highly conductive metal.
  • the gate 114 may be configured as a T- shaped gate.
  • one or more metal overlayers may be provided on one or more of the source 110, the contact 652, the drain 112, and the gate 114.
  • the overlayers may be Au, Silver (Ag), Al, Pt, Ti, Si, Ni, Al, and/or Copper (Cu). Other suitable highly conductive metals may also be used for the overlayers.
  • the metal overlayer may electrically couple to the contact 652.
  • the source 110, the contact 652, the drain 112, and the gate 114 may include Au, Silver (Ag), Al, Pt, Ti, Si, Ni, Al, and/or Copper (Cu). Other suitable highly conductive metals may also be used.
  • a second buffer layer may be deposited or grown on a first implementation of the buffer layer 104 on a side of the first implementation of the buffer layer 104 opposite of the substrate layer 102.
  • the second buffer layer may be formed directly on the first implementation of the buffer layer 104.
  • the second buffer layer may be a high-purity material such as Gallium Nitride (GaN), AIN, or the like.
  • the second buffer layer may be a high-purity GaN.
  • the second buffer layer may be a high-purity AIN.
  • the second buffer layer may be a p- type material or n-type material.
  • the second buffer layer may be undoped.
  • the contacts of the source 110, the gate 114, and/or the drain 112 may include Al, Ti, Si, Ni, and/or Pt.
  • the contact 652 may include Al, Ti, Si, Ni, and/or Pt.
  • the material of the contacts of the source 110, the gate 114, and/or the drain 112 may be the same material as the contact 652. In this aspect, utilizing the same material may be beneficial in that manufacturing may be easier, simplified, and/or less costly. In other aspects, the material of the contacts of the source 110, the gate 114, the drain 112, and the contact 652 may be different.
  • Figure 11 shows a process for making a transistor according to the disclosure.
  • Figure 11 shows an exemplary process 500 for making the transistor 100 of the disclosure.
  • the process 500 is merely exemplary and may be modified consistent with the various aspects disclosed herein.
  • the process 500 may include any one or more aspects of the disclosure described herein.
  • the process 500 may include making the p- type material layer 106 as described above.
  • the process 500 implements a length of the p-type material layer 106 as described herein that reduces gate lag effect, avoids adverse effects on RF performance for certain transistor applications, and/or the like.
  • the process 500 may begin at step 502 by forming a substrate layer 102.
  • the substrate layer 102 may be formed consistent with the disclosure.
  • the substrate layer 102 may be made of Silicon Carbide (SiC).
  • the substrate layer 102 may be a semi-insulating SiC substrate, a p-type substrate, an n-type substrate, and/or the like.
  • the substrate layer 102 may be very lightly doped.
  • the background impurity levels may be low.
  • the background impurity levels may be 1 E15/cm 3 or less.
  • the substrate layer 102 may be formed of SiC selected from the group of 6H, 4H, 15R, 3C SiC, or the like.
  • the substrate layer 102 may be GaAs, GaN, or other material suitable for the applications described herein.
  • the substrate layer 102 may include sapphire, spinel, ZnO, silicon, or any other material capable of supporting growth of Group Ill-nitride materials.
  • the process 500 may include a step 504 of forming the p-type material layer 106.
  • the p-type material layer 106 may be formed as described in the disclosure. This may include implanting Al into the substrate layer 102 to form the p- type material layer 106 in the substrate layer 102.
  • the p-type material layer 106 may be formed by ion implantation of Al and annealing.
  • the p-type material layer 106 may be formed by implantation and annealing of Al prior to the growth of any GaN layers.
  • the ion implementation may utilize channeling implants.
  • the channeling implants may include aligning the ion beam to the substrate layer 102.
  • the process 500 may further include implanting Al into the substrate layer 102 to form the p-type material layer 106 in the substrate layer 102. Thereafter, the substrate layer 102 may be annealed as defined herein.
  • the process 500 may include a step 506 of forming the buffer layer 104 on the substrate layer 102.
  • the buffer layer 104 may be grown or deposited on the substrate layer 102 as described in the disclosure.
  • the buffer layer 104 may be GaN.
  • the buffer layer 104 may be formed with LEO.
  • a nucleation layer 136 may be formed on the substrate layer 102 and the buffer layer 104 may be formed at step 506 on the nucleation layer 136.
  • the buffer layer 104 may be grown or deposited on the nucleation layer 136.
  • the buffer layer 104 may be GaN.
  • the buffer layer 104 may be formed with LEO.
  • the barrier layer 108 may be formed on the buffer layer 104.
  • the barrier layer 108 may be formed as described in the disclosure.
  • the barrier layer 108 may be an n-type conductivity layer or may be undoped.
  • the barrier layer 108 may be AIGaN.
  • a recess may be created by removing at least part of the barrier layer 108 and at least part of the buffer layer 104.
  • the process 500 for forming the connection 550 and/or the connection 650 may include removing any material above the p-type material layer 106, exposing the p- type material layer 106 on a side opposite of the substrate layer 102.
  • the connection 550 and/or the connection 650 may be created by removing at least part of the barrier layer 108 and at least part of the buffer layer 104.
  • the recess formation process may remove any material above the p-type material layer 106 within a portion of a region associated with the source 110, exposing the p-type material layer 106 on a side opposite of the substrate layer 102.
  • the contact 652 may be formed. Once the p- type material layer 106 is exposed, nickel or another suitable material may be evaporated to deposit the contact 652. The nickel or another suitable material may be annealed to form an ohmic contact, for example.
  • the contacts of the contact 652 may include Al, Ti, Si, Ni, and/or Pt. Such a deposition and annealing process may be carried out utilizing conventional techniques known to those of skill in the art. For example, an ohmic contact for the contact 652 may be annealed at a temperature of from about 600° C. to about 1050° C.
  • a metal overlayer may electrically couple the contact 652 of the p-type material layer 106 to the source 110. Doing this may maintain the conductivity of the p-type materia! layer 106 and the source 110 at the same potential.
  • the radiofrequency circuit 702 may be created and connected to the contact 652.
  • the radiofrequency circuit 702 may include one or more resistors, one or more capacitors, one or more inductors, one or more resistor circuits, one or more capacitor circuits, one or more inductor circuits, and/or the like as described herein. Additionally or alternatively, the radiofrequency circuit 702 may include any other features as set forth by the disclosure.
  • the source 110 may be arranged on the barrier layer 108.
  • the source 110 may be an ohmic contact of a suitable material that may be annealed.
  • the source 110 may be annealed at a temperature of from about 500° C. to about 800° C. for about 2 minutes. However, other times and temperatures may also be utilized. Times from about 30 seconds to about 10 minutes may be, for example, acceptable.
  • the source 110 may include Al, Ti, Si, Ni, and/or Pt.
  • a region 164 under the source 110 that is a N+ material may be formed in the barrier layer 108.
  • a region 164 under the drain 112 may be Si doped.
  • the drain 112 may be arranged on the barrier layer 108. Like the source 110, the drain 112 may be an ohmic contact of Ni or another suitable material, and may also be annealed in a similar fashion. In one aspect, an n+ implant may be used in conjunction with the barrier layer 108 and the contacts are made to the implant. In one aspect, a region 164 under the drain 112 that is a N+ material may be formed in the barrier layer 108. In one aspect, a region 164 under the drain 112 may be Si doped.
  • the gate 114 may be arranged on the barrier layer 108 between the source 110 and the drain 112.
  • a layer of Ni, Pt, AU, or the like may be formed for the gate 114 by evaporative deposition or another technique.
  • the gate structure may then be completed by deposition of Pt and Au, or other suitable materials.
  • the contacts of the gate 114 may include Al, Ti, Si, Ni, and/or Pt.
  • the spacer layer 116 may be formed.
  • the spacer layer 116 may be a passivation layer, such as SiN, AIO, SiO, S1O2, AIN, or the like, or a combination incorporating multiple layers thereof, which may be deposited over the exposed surface of the barrier layer 108.
  • the source 110 and the drain 112 electrodes may be formed making ohmic contacts such that an electric current flows between the source 110 and drain 112 electrodes via a two-dimensional electron gas (2DEG) induced at the heterointerface 152 between the buffer layer 104 and barrier layer 108 when a gate 114 electrode is biased at an appropriate level.
  • 2DEG two-dimensional electron gas
  • the source 110 may be electrically coupled to the barrier layer 108
  • the drain 112 may be electrically coupled to the barrier layer 108
  • the gate 114 may be electrically coupled to the barrier layer 108 such that an electric current flows between the source 110 and the drain 112 via a two-dimensional electron gas (2DEG) induced at the heterointerface 152 between the buffer layer 104 and the barrier layer 108 when the gate 114 electrode is biased at an appropriate level.
  • 2DEG two-dimensional electron gas
  • the source 110 may be electrically coupled to the transistor 100
  • the drain 112 may be electrically coupled to the transistor 100
  • the gate 114 may be electrically coupled to the transistor 100 such that an electric current flows between the source 110 and the drain 112 via a two-dimensional electron gas (2DEG) induced at the heterointerface 152 between the buffer layer 104 and the barrier layer 108 when a gate 114 is biased at an appropriate level.
  • the gate 114 may control a flow of electrons in the 2DEG based on a signal and/or bias placed on the gate 114.
  • the transistor 100 can be normally on or the transistor 100 can be normally off with no bias or signal on the gate.
  • the heterointerface 152 may be in the range of .005 pm to .007 pm, .007 pm to .009 pm, and .009 pm to .011 pm.
  • the gate 114 may extend on top of a spacer or the spacer layer 116.
  • the spacer layer 116 may be etched and the gate 114 deposited such that the bottom of the gate 114 is on the surface of barrier layer 108.
  • the metal forming the gate 114 may be patterned to extend across spacer layer 116 so that the top of the gate 114 forms a field plate 132.
  • a second spacer layer 117 may be formed and a field plate 132 may be arranged on top of the second spacer layer 117 and may be separated from the gate 114.
  • the field plate 132 may be deposited on the second spacer layer 117 between the gate 114 and the drain 112.
  • the field plate 132 may include many different conductive materials with a suitable material being a metal, or combinations of metals, deposited using standard metallization methods.
  • the field plate 132 may include titanium, gold, nickel, titanium/gold, nickel/gold, or the like.
  • connection 154 may be formed with the field plate 132 during the same manufacturing step (see Figure 10).
  • a plurality of the field plates 132 may be used.
  • a plurality of the field plates 132 may be used and each of the plurality of field plates 132 may be stacked with a dielectric material therebetween.
  • the field plate 132 extends toward the edge of gate 114 towards the drain 112.
  • the field plate 132 extends towards the source 110.
  • the field plate 132 extends towards the drain 112 and towards the source 110.
  • the field plate 132 does not extend toward the edge of gate 114.
  • the structure may be covered with a dielectric spacer layer such as silicon nitride.
  • the dielectric spacer layer may also be implemented similar to the spacer layer 116.
  • the cross-sectional shape of the gate 114, shown in the Figures is exemplary.
  • the cross-sectional shape of the gate 114 in some aspects may not include the T-shaped extensions.
  • Other constructions of the gate 114 may be utilized, for example, the construction of the gate 114 illustrated in Figure 8 or Figure 1.
  • connection 550 may be formed.
  • the connection 550 may be formed to extend between the p-type material layer 106 and the gate 114.
  • the connection 154 may be formed.
  • the field plate 132 may be electrically connected to the source 110 with the connection 154.
  • the connection 154 may be formed on the second spacer layer 117 to extend between the field plate 132 and the source 110.
  • the steps of process 500 may be performed in a different order consistent with the aspects described above. Moreover, the process 500 may be modified to have more or fewer process steps consistent with the various aspects disclosed herein.
  • the transistor 100 may be implemented with only the p-type material layer 106. In one aspect of the process 500, the transistor 100 may be implemented with the p-type material layer 106 and the p-type material layer 106. In one aspect of the process 500, the transistor 100 may be implemented with only the p-type material layer 106.
  • the p-type material layer 106 may be doped as highly as possible with minimum achievable sheet resistance. In one aspect, the p-type material layer 106 may have an implantation concentration less than 10 19 . In one aspect, the p-type material layer 106 may have an implantation concentration less than 10 20 . In one aspect, the p-type material layer 106 may have an implantation concentration of 10 17 - 10 20 , 10 19 - 10 20 , 10 18 - 10 19 , or 10 17 - 10 18 . In one aspect, the p-type material layer 106 may have an implantation concentration 10 19 or greater. In one aspect, the p-type material layer 106 may have an implantation concentration of 10 18 - 10 20 , 10 18 - 10 19 , or 10 19 - 10 20 .
  • the p-type material layer 106 doping may be less than 1 E17 cm 3 . In one aspect, the p-type material layer 106 doping may be less than 2E17 cm 3 . In one aspect, the p-type material layer 106 doping may be less than 6E17 cm 3 . In one aspect, the p-type material layer 106 doping may be less than 2E18 cm 3 . In one aspect, the p-type material layer 106 doping may be in the range of 5E15 to 5E17 per cm 3 . In these aspects, the p-type material layer 106 doping concentration may be greater than a doping concentration of the p-type material layer 106.
  • the disclosure has presented a solution to addressing gate lag effect in Group-Ill nitride HEMTs and improving the performance of such devices. Additionally, the disclosure has presented a solution to addressing traps that cause memory effects that adversely affect performance. Moreover, the disclosure has set forth a simpler alternative solution to forming p-type layers in HEMTs.
  • the disclosed structure can be readily fabricated with currently available techniques. Moreover, the disclosed use of a high-purity material minimizes drain lag effects. Additionally, the disclosed p-type material layer provides a retarding electric field to obtain good electron confinement with low leakage. Additionally, aspects of this disclosure have described in detail variations of transistors with p-type layers and the ways those p-type layers are formed. The disclosed transistors maximize RF power, allow for efficient discharge, and maximize breakdowns.
  • transistors such as GaN HEMTs, fabricated on high resistivity substrates may be utilized for high power RF (radio frequency) amplifiers, for high power radiofrequency (RF) applications, and also for low frequency high power switching applications.
  • RF radio frequency
  • RF radiofrequency
  • the advantageous electronic and thermal properties of GaN HEMTs also make them very attractive for switching high power RF signals.
  • the disclosure has described a structure with a buried p-layer under the source region to obtain high breakdown voltage in HEMTs for various applications including power amplifiers while at the same time eliminating drifts in device characteristics arising from trapping in the buffer and/or semi-insulating substrates.
  • Use of buried p-layers may also be important in HEMTs for RF switches to obtain high breakdown voltage and good isolation between the input and output.
  • One example includes an apparatus that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source electrically coupled to the group Ill-Nitride barrier layer; a gate electrically coupled to the group Ill-Nitride barrier layer; a drain electrically coupled to the group Ill-Nitride barrier layer; and a p-region being arranged at least in the substrate, where the p-region extends toward a source side of the substrate; and where the p-region extends toward a drain side of the substrate.
  • the above-noted Example may further include any one or a combination of more than one of the following aspects.
  • the apparatus of the above- noted example where: a part of the source side of the substrate is free of the p- region; and a part of the drain side of the substrate is free of the p-region.
  • the apparatus of the above-noted example where: a portion of the substrate includes the p-region located vertically below the source; and another portion of the substrate does not include the p-region located vertically below the source.
  • the substrate does not include the p-region located vertically below the source; and the substrate does not include the p-region located vertically below the drain.
  • the apparatus of the above-noted example further includes a connection to the p-region that is electrically connected to the gate.
  • the apparatus of the above-noted example further includes a connection to the p-region that is electrically connected to a contact to receive an external signal or bias.
  • the apparatus of the above-noted example further includes a connection to the p-region that is electrically connected to a contact that is electrically connected to a radiofrequency circuit.
  • the apparatus of the above-noted example further includes a field plate, where the p-region is implanted.
  • the apparatus of the above-noted example further includes a field plate, where the field plate is electrically coupled to said source.
  • a distance LGD is a distance from a lower corner of the gate on the drain side to a lower corner of the drain on a gate side
  • a distance LGS is a distance from a lower corner of the gate on the source side to a lower corner of the source on a gate side
  • the distance LGD greater than the distance LGS.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPS being equal to the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPS greater than the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPD greater than the distance LGPS.
  • the apparatus of the above-noted example where the p-region extends toward the source but does not vertically overlap the source.
  • the apparatus of the above-noted example where the p-region is electrically connected to the gate.
  • the apparatus of the above-noted example where the gate is electrically connected to any external circuit or voltage.
  • the apparatus of the above- noted example where the p-region includes no direct electrical connections.
  • One example includes a method of making a device that includes providing a substrate; providing a group Ill-Nitride buffer layer on the substrate; providing a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; electrically coupling a source to the group Ill-Nitride barrier layer; electrically coupling a gate to the group Ill-Nitride barrier layer; electrically coupling a drain to the group Ill-Nitride barrier layer; and providing a p- region being arranged at least in the substrate, where the p-region extends toward a source side of the substrate; and where the p-region extends toward a drain side of the substrate.
  • the above-noted Example may further include any one or a combination of more than one of the following aspects.
  • the method of making the device of the above-noted example where: a part of the source side of the substrate is free of the p-region; and a part of the drain side of the substrate is free of the p- region.
  • the method of making the device of the above-noted example where: a portion of the substrate includes the p-region located vertically below the source; and another portion of the substrate does not include the p-region located vertically below the source.
  • the substrate does not include the p-region located vertically below the source; and the substrate does not include the p-region located vertically below the drain.
  • the method of making the device of the above-noted example further includes forming the p-region such that no portion of the p-region is located vertically below the drain.
  • the method of making the device of the above-noted example further includes forming a connection to the p-region that is electrically connected to the gate.
  • the method of making the device of the above-noted example further includes forming a connection to the p-region that is electrically connected to a contact to receive an external signal or bias.
  • the method of making the device of the above- noted example further includes forming a connection to the p-region that is electrically connected to a contact that is electrically connected to a radiofrequency circuit.
  • the method of making the device of the above-noted example further includes implanting the p-region.
  • the method of making the device of the above- noted example further includes providing a field plate.
  • the method of making the device of the above-noted example further includes providing a field plate, where the field plate is electrically coupled to said source.
  • the method of making the device of the above-noted example where the p-region is arranged under and across a length of the gate and extends toward the source and the drain.
  • a distance LGD is a distance from a lower corner of the gate on the drain side to a lower corner of the drain on a gate side
  • a distance LGS is a distance from a lower corner of the gate on the source side to a lower corner of the source on a gate side
  • the distance LGD greater than the distance LGS
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPS being equal to the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPS greater than the distance LGPD
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPD greater than the distance LGPS.
  • the method of making the device of the above-noted example where the p-region is electrically connected to the source.
  • One example includes an apparatus, that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source electrically coupled to the group Ill-Nitride barrier layer; a gate electrically coupled to the group Ill-Nitride barrier layer; a drain electrically coupled to the group Ill-Nitride barrier layer; and a p-region being arranged at least in the substrate, where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • the above-noted Example may further include any one or a combination of more than one of the following aspects.
  • the apparatus of the above- noted example where: a portion of the substrate includes the p-region located vertically below the source; and another portion of the substrate does not include the p-region located vertically below the source.
  • the apparatus of the above-noted example where: the substrate does not include the p-region located vertically below the source; and the substrate does not include the p-region located vertically below the drain.
  • the p-region is structured and arranged such that no portion of the p-region is located vertically below the drain.
  • the apparatus of the above-noted example includes a connection to the p-region that is electrically connected to the gate.
  • the apparatus of the above- noted example includes a connection to the p-region that is electrically connected to a contact to receive an external signal or bias.
  • the apparatus of the above-noted example includes a connection to the p-region that is electrically connected to a contact that is electrically connected to a radiofrequency circuit.
  • the apparatus of the above-noted example includes a field plate, where the p-region is implanted.
  • the apparatus of the above-noted example includes a field plate, where the field plate is electrically coupled to said source.
  • a distance LGD is a distance from a lower corner of the gate on the drain side to a lower corner of the drain on a gate side
  • a distance LGS is a distance from a lower corner of the gate on the source side to a lower corner of the source on a gate side
  • the distance LGD greater than the distance LGS.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPS being equal to the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPS greater than the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPD greater than the distance LGPS.
  • the apparatus of the above-noted example where the p-region includes no direct electrical connections.
  • One example includes a method of making a device that includes providing a substrate; providing a group Ill-Nitride buffer layer on the substrate; providing a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; electrically coupling a source to the group Ill-Nitride barrier layer; electrically coupling a gate to the group Ill-Nitride barrier layer; electrically coupling a drain to the group Ill-Nitride barrier layer; and providing a p- region being arranged at least in the substrate, where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • the above-noted Example may further include any one or a combination of more than one of the following aspects.
  • the method of making the device of the above-noted example further includes forming the p-region such that no portion of the p-region is located vertically below the drain.
  • the method of making the device of the above-noted example further includes forming a connection to the p-region that is electrically connected to the gate.
  • the method of making the device of the above- noted example further includes forming a connection to the p-region that is electrically connected to a contact to receive an external signal or bias.
  • the method of making the device of the above-noted example further includes forming a connection to the p-region that is electrically connected to a contact that is electrically connected to a radiofrequency circuit.
  • the method of making the device of the above-noted example further includes implanting the p-region.
  • the method of making the device of the above-noted example further includes providing a field plate.
  • the method of making the device of the above-noted example further includes providing a field plate, where the field plate is electrically coupled to said source.
  • a distance LGD is a distance from a lower corner of the gate on the drain side to a lower corner of the drain on a gate side
  • a distance LGS is a distance from a lower corner of the gate on the source side to a lower corner of the source on a gate side
  • the distance LGD greater than the distance LGS
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPS being equal to the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPS greater than the distance LGPD
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPD greater than the distance LGPS.
  • the method of making the device of the above-noted example where the p-region is electrically connected to the source.
  • One example includes an apparatus, that includes a substrate; a group Ill-Nitride buffer layer on the substrate; a group Ill-Nitride barrier layer on the group Ill-Nitride buffer layer, the group Ill-Nitride barrier layer includes a higher bandgap than a bandgap of the group Ill-Nitride buffer layer; a source on the group Ill-Nitride barrier layer; a drain on the group Ill-Nitride barrier layer; a gate on the group Ill-Nitride barrier layer between the source and the drain; a p-region being arranged at least in the substrate; and where a part of a source side of the substrate is free of the p-region; and where a part of a drain side of the substrate is free of the p-region.
  • the above-noted Example may further include any one or a combination of more than one of the following aspects.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPS being equal to the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source; a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain; and the distance LGPS greater than the distance LGPD.
  • a distance LGPS defines a length of a portion of the p-region from a lower corner of the gate on the source side toward the source
  • a distance LGPD defines a length of a portion of the p-region from a lower corner of the gate on the drain side toward the drain
  • the distance LGPD greater than the distance LGPS.
  • the apparatus of the above-noted example where the p-region includes no direct electrical connections.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'invention concerne un appareil pour résoudre un effet de retard de grille et/ou d'autres performances négatives qui comprend un substrat; une couche tampon au nitrure du groupe III sur le substrat; une couche barrière au nitrure du groupe III sur la couche tampon au nitrure du groupe III, la couche barrière au nitrure du groupe III pouvant comprendre une bande interdite plus élevée qu'une bande interdite de la couche tampon au nitrure du groupe III; une source couplée électriquement à la couche barrière au nitrure du groupe III; une grille couplée électriquement à la couche barrière au nitrure du groupe III; un drain couplé électriquement à la couche barrière au nitrure du groupe III; et une région p étant disposée au moins dans le substrat. Plus particulièrement, la région p s'étend vers un côté source du substrat; et la région p s'étend vers un côté drain du substrat.
EP22753113.4A 2021-02-10 2022-01-20 Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif Pending EP4292132A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/172,669 US20210167199A1 (en) 2016-06-24 2021-02-10 Group iii-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
PCT/US2022/013085 WO2022173571A1 (fr) 2021-02-10 2022-01-20 Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif

Publications (1)

Publication Number Publication Date
EP4292132A1 true EP4292132A1 (fr) 2023-12-20

Family

ID=82837976

Family Applications (1)

Application Number Title Priority Date Filing Date
EP22753113.4A Pending EP4292132A1 (fr) 2021-02-10 2022-01-20 Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif

Country Status (5)

Country Link
EP (1) EP4292132A1 (fr)
JP (1) JP2024507153A (fr)
KR (1) KR20230137469A (fr)
CN (1) CN117121211A (fr)
WO (1) WO2022173571A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100576708B1 (ko) * 2003-12-05 2006-05-03 한국전자통신연구원 화합물 반도체 고주파 스위치 소자
US10032775B2 (en) * 2015-05-29 2018-07-24 Rohde & Schwarz Gmbh & Co. Kg Switching device for switching radio frequency signals
US9917578B2 (en) * 2016-02-19 2018-03-13 Infineon Technologies Austria Ag Active gate-source capacitance clamp for normally-off HEMT
US10192980B2 (en) * 2016-06-24 2019-01-29 Cree, Inc. Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US10937873B2 (en) * 2019-01-03 2021-03-02 Cree, Inc. High electron mobility transistors having improved drain current drift and/or leakage current performance

Also Published As

Publication number Publication date
JP2024507153A (ja) 2024-02-16
WO2022173571A8 (fr) 2023-02-16
WO2022173571A1 (fr) 2022-08-18
CN117121211A (zh) 2023-11-24
KR20230137469A (ko) 2023-10-04

Similar Documents

Publication Publication Date Title
US20240105829A1 (en) Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same
US20210167199A1 (en) Group iii-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same
US10192980B2 (en) Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
US11430882B2 (en) Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
JP7543452B2 (ja) 埋込みｐ型層を有する第ＩＩＩ族窒化物高電子移動度トランジスタおよびその作製プロセス
CN115244683A (zh) 共享结构特征的iii族hemt和电容器
US10840334B2 (en) Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
WO2022245886A1 (fr) Procédés de fabrication de transistors à haute mobilité d'électrons présentant une performance améliorée
EP4342000A1 (fr) Transistors au nitrure de groupe iii avec structures de barrière arrière et couches de type p enterrées et procédés associés
US11929428B2 (en) Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same
US20220367695A1 (en) Circuits and group iii-nitride transistors with buried p-layers and controlled gate voltages and methods thereof
US20230197841A1 (en) Group iii-nitride high-electron mobility transistors with a buried conductive material layer and process for making the same
EP4292132A1 (fr) Transistors à mobilité d'électrons élevée au nitrure du groupe iii et procédé de fabrication y relatif
US20240274507A1 (en) Vias for Semiconductor Devices Formed from Multiple Etching

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20230818

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)