Classifications

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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
  • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
  • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
  • C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
  • C04B35/628—Coating the powders or the macroscopic reinforcing agents
  • C04B35/62844—Coating fibres
  • C04B35/62857—Coating fibres with non-oxide ceramics
  • C04B35/6286—Carbides
  • C04B35/62863—Silicon carbide
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
  • C04B35/628—Coating the powders or the macroscopic reinforcing agents
  • C04B35/62844—Coating fibres
  • C04B35/62857—Coating fibres with non-oxide ceramics
  • C04B35/62865—Nitrides
  • C04B35/62868—Boron nitride
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
  • C04B35/628—Coating the powders or the macroscopic reinforcing agents
  • C04B35/62844—Coating fibres
  • C04B35/62857—Coating fibres with non-oxide ceramics
  • C04B35/62865—Nitrides
  • C04B35/62871—Silicon nitride
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
  • C04B35/628—Coating the powders or the macroscopic reinforcing agents
  • C04B35/62884—Coating the powders or the macroscopic reinforcing agents by gas phase techniques
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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
  • C04B35/71—Ceramic products containing macroscopic reinforcing agents
  • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
  • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/04—Coating on selected surface areas, e.g. using masks
  • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/32—Carbides
  • C23C16/325—Silicon carbide
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/342—Boron nitride
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/345—Silicon nitride
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
  • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45519—Inert gas curtains
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
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  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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  • C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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  • C04B2235/5216—Inorganic
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  • C04B2235/52—Constituents or additives characterised by their shapes
  • C04B2235/5208—Fibers
  • C04B2235/5252—Fibers having a specific pre-form
• • C—CHEMISTRY; METALLURGY
  • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
  • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
  • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
  • C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
  • C04B2235/614—Gas infiltration of green bodies or pre-forms

Definitions

• the present invention relates to the general field of processes for depositing a coating on a carbon or silicon carbide wire by coupling with a microwave field in the presence of a coating precursor in the vapor state.
• Ceramic matrix composite materials known for their good mechanical properties which make them suitable for constituting structural elements and for maintaining these properties at high temperatures, constitute a viable alternative to traditional metal parts. Their reduced mass compared to their metallic equivalent makes them the parts of choice to meet the problems of increasing efficiency and reducing polluting emissions from engines in the aeronautical field.
• CMC material parts include a fibrous reinforcement generally in the form of a woven textile, which is densified by a ceramic matrix.
• the fibrous reinforcement can comprise long filaments, generally grouped together in the form of threads, the orientation of which can be adapted to the main directions of stress on the part during its use.
• the preform intended to form the fibrous reinforcement must be woven from yarns to the dimensions of the piece (for example by two-dimensional or three-dimensional weaving), using a suitable loom.
• threads in the fiber preform which are coated with an interphase, prior to the densification of the preform is known to use threads in the fiber preform which are coated with an interphase, prior to the densification of the preform.
• CVI chemical Vapor Infiltration
• the present invention relates to a process for treating a carbon or ceramic wire comprising at least the formation of a coating on the wire in a reaction zone of a reactor by heating a segment of the wire in the presence of a gas phase in a microwave field, characterized in that the gas phase comprises a mixture of a diluent gas and a coating precursor in the vapor state, and in that the gas phase is formed at least by introducing diluent gas in the reactor and mixing the diluent gas introduced with the coating precursor in the reactor before the reaction zone.
• a “thread segment” here corresponds to a certain length of thread, in other words, the segment extends along the length or the longest dimension of the thread.
• a yarn can comprise several filaments, a yarn segment can comprise several filaments.
• the segment of the wire is heated, in the reaction zone, by direct coupling via microwaves, which makes it possible to bring its surface to a temperature sufficient to form the coating from the coating precursor in the vapor state .
• the wire segment is heated as a whole, which allows a homogeneous and rapid formation of the coating on the latter with a limited amount of energy because the wire segment is heated directly by the microwave field.
• the invention proposes supplying diluent gas which mixes with the precursor in the reactor before the reaction zone.
• the use of the diluent gas makes it possible to dilute the rate of reagent and to control the kinetics of deposition so as to obtain a more homogeneous deposition.
• the gas The diluent can, when it is introduced, be mixed with the coating precursor while it is in the liquid state or already in the vapor state.
• the diluent gas reacts with excess carbon from the coating precursor before the reaction zone and/or with excess carbon from the coating formed in the reaction zone.
• the diluent gas can thus be reactive with respect to the precursor and/or the coating in order to consume the excess carbon causing a deviation from the stoichiometry desired for the coating.
• This reaction can be an oxidation reaction or preferably a reduction reaction.
• the reactive diluent gas may comprise dihydrogen (H 2 ) or ammonia (NH 3 ). In this case, a reduction reaction is carried out to consume the excess carbon.
• dihydrogen may be preferred over ammonia for the case of a silicon carbide coating for example, because it makes it possible to avoid any risk of parasitic nitriding of the coating formed on the wire.
• ammonia may be preferred over dihydrogen, this is the case for example in the case of a boron nitride coating because the ammonia provides additional nitrogen to adjust the stoichiometry of the coating formed.
• a reactive diluent gas comprising dioxygen, a nitrogen oxide, for example N 2 O, or a carbon oxide, for example CO or CO 2 .
• Such oxidation can be implemented in the case of the formation of an oxide coating.
• the diluent gas is inert with respect to the coating precursor and/or with respect to the coating formed in the reaction zone.
• the inert diluent gas may comprise dinitrogen (N 2 ) or argon (Ar).
• the diluent gas comprises a mixture of at least one reactive gas and at least one inert gas.
• the formation of the gas phase comprises the evaporation of the liquid coating precursor in the reactor by contact with a hot portion of the wire adjacent to the segment present in the microwave field.
• the portion of the wire adjacent to the coating is heated by conduction and radiation from the wire segment present in the microwave field.
• the diluent gas can be mixed with the liquid coating precursor during its introduction into the reactor.
• Such a characteristic is advantageous because it promotes the evaporation of the liquid coating precursor and its entrainment in the reaction zone and makes it possible to modulate the flow rate of precursor in the reaction zone.
• the diluent gas is mixed with the coating precursor in the vapor state when it is introduced into the reactor.
• the invention is however not limited to vaporization of the coating precursor in the liquid state carried out in the reactor.
• the formation of the gas phase comprises the introduction of the coating precursor in the vapor state into the reactor and the mixing of the diluent gas with the coating precursor in the vapor state thus introduced.
• the volume fraction of diluent gas in the gas phase is greater than or equal to the volume fraction of coating precursor in the vapor state in the gas phase, for example greater than or equal to twice this volume fraction.
• Such a characteristic advantageously makes it possible to further improve the homogeneity of the coating obtained on the wire.
• the volume fraction of coating precursor in the vapor state in the gas phase can be between 15% and 75%, preferably between 25% and 50%, and the volume fraction of diluent gas in the gas phase can be between 25% and 85%, preferably between 50% and 75%.
• the yarn can be set in motion in the reactor during its treatment.
• the segment upon heating the wire segment, the segment may be in a first position, and the method may further include moving the wire so as to position the segment in a second position in which the segment is out of the micro-field. waves.
• the method can include a step of moving the wire in the microwave field and in the reactor. This advantageous arrangement makes it possible to form the coating over the entire length of the wire more easily.
• the scrolling of the wire can be carried out in a way continuous, that is to say uninterrupted during the deposition, or step by step, that is to say that the wire is stopped during the deposition and then moved so as to position a second segment in the reaction zone after deposition on a first section.
• the coating precursor is a silicon carbide (SiC) precursor.
• the coating precursor is a boron nitride (BN) precursor.
• Boron nitride is an interphase material, that is to say having a function of debrittlement of the composite material which favors the deviation of any cracks reaching the interphase after having propagated in the matrix, preventing or delaying the breakage of wires by such cracks.
• the coating precursor is a precursor of silicon nitride (Si3N 4 ).
• the coating formed on the wire can be a ceramic coating, for example carbide or nitride, for example boron carbide, boron nitride or silicon nitride.
• the wire is set in motion in the reactor, and the segment of wire covered with the coating is transported to an additional treatment zone separate from the reaction zone where it undergoes a heat treatment.
• the temperature imposed in the additional treatment zone may be greater than or equal to the temperature in the reaction zone.
• the temperature imposed in the additional treatment zone can be greater than or equal to 1100°C, for example 1200°C. This temperature can for example be between 1100°C and 1700°C, for example between 1200°C and 1500°C.
• the heat treatment can lead to dehydrogenation of the coating covering the yarn. This may be the case, for example, when the coating formed is of silicon carbide if the chosen precursor leads to a coating with an excess of hydrogen.
• the heat treatment can lead to crystallization or stabilization of the coating covering the wire, this is the case for example when the coating formed is boron nitride. Stabilization of the coating means that the coating is made less sensitive to air.
• the invention also relates to a method for manufacturing a part made of composite material, comprising:
• the matrix may be at least partially ceramic, for example predominantly in ceramic volume.
• FIG. 1 schematically represents a device for implementing a first example of a method according to the invention.
• FIG. 2 schematically represents a device for implementing a second example of a method according to the invention.
• FIG. 3 schematically represents a device for implementing a third example of a method according to the invention.
• FIG. 4 schematically represents a device for implementing a fourth example of a method according to the invention.
• Figure 5 is a photograph of a section of a coated yarn obtainable within the scope of the invention.
• Figure 6 is a photograph of a section of another coated yarn obtainable within the scope of the invention.
• FIG. 1 a device 100 for implementing an example of a method according to the invention.
• the coating precursor 140 is present in the liquid state in the reactor 120 and the diluent gas 200a, 200b is directly injected into the liquid precursor 140.
• the device 100 comprises a microwave generator 110, a reactor 120, and a scrolling device (not shown) which makes it possible to move the wire 150 through the reactor 120.
• the wire 150 treated is made of carbon or ceramic, for example of silicon carbide.
• the material of the wire 150 is chosen so as to couple with the microwave field in the reaction zone 115 in order to cause its heating.
• the wire 150 can be made of silicon carbide having an oxygen content less than or equal to 1% in atomic percentage. It is for example possible to use a yarn of the Hi-Nicalon type S type marketed by the Japanese company NGS. It will be noted that the treated wire 150 may or may not already be coated with another material.
• the microwave generator 110 here comprises a resonator 111 defining a resonant cavity 112, the resonator 111 is connected to a wave generator (not shown).
• the resonant cavity 112 is traversed by a microwave field.
• the microwave field can be characterized by its power (or amplitude) and its frequency, which those skilled in the art can easily determine to obtain a surface temperature of the wire suitable for forming the coating from a given coating precursor.
• the microwave field may have a main frequency between 2.35 GHz and 2.55 GHz.
• the use of a microwave generator with a main frequency of 2.45 GHz allows the heating of a wire made up of around 500 silicon carbide filaments. The heating is then done in a very localized manner only on the wire: the heating is then qualified as direct coupling in a cold-wall reactor.
• the reactor 120 can be made of a material transparent to microwaves, for example quartz.
• the reactor 120 may have the shape of a tube, having for example a U-shape.
• the reactor 120 may have having a base part (here a horizontal part) 121, a first branch (here a first vertical part) 122 and a second branch (here a second vertical part) 123, each of the vertical parts 122 and 123 being connected to the horizontal part 121.
• the first vertical part 122 can be connected to a first end of the horizontal part 121 and the second vertical part 123 at a second end of the horizontal part 121, opposite the first end.
• the second vertical part 123 of the reactor 120 is here present at least partly in the resonant cavity 112 of the resonator 111, that is to say that it crosses the resonator 111.
• the part of the reactor 120 present in the resonant cavity 112 forms the reaction zone 115.
• the wire 150 can be placed at an antinode of the microwave field in the zone reaction 115. Only a branch or a vertical part 123 of the reactor 120 can be present in the microwave field.
• the shape of the reactor 120 makes it possible to introduce a liquid precursor 140.
• the level of liquid can be regulated by adding precursor in one of the two vertical parts 122 and 123, for example in the first vertical part 122 using a dropping funnel 143 connected to reactor 120 as in the non-limiting example shown.
• the amount of liquid can be regulated manually or controlled by a sensor at the level of the precursor and an automated precursor supply device. In the latter case, it is possible to use a liquid flowmeter connected upstream to a pressurized canister, the regulation of the level being able to be done by an optical sensor of the level of liquid in the part 122, said sensor controlling the regulation valve of the flowmeter.
• the reactor 120 can be provided with a purge valve 126 in order to evacuate the precursor 140 at the end of the deposition.
• the meniscus 145 of the precursor 140 is located below the resonant cavity 112 or below the reaction zone 115. In particular, there is no liquid precursor 140 in the reaction zone 115 in the example illustrated.
• a portion of wire 156a contiguous to the segment 156 of wire present in the microwave field is heated by thermal conduction.
• the portion 156a brought into contact with the liquid precursor 140 allows its evaporation at the level of the meniscus 145.
• the precursor 140 thus evaporated spreads towards the reaction zone 115 to carry out the deposition on the wire.
• Pumping can be performed to force this natural propagation of the precursor 140 towards the reaction zone 115.
• the coating is formed from the gaseous phase in the reaction zone by chemical vapor infiltration, the coating covering the surface of the filaments forming the wire 150 and being deposited in the inter-filament spaces.
• the distance d from the meniscus 145 to the reaction zone 115 can be greater than or equal to 1 cm, for example greater than or equal to 5 cm, for example between 1 cm and 15 cm, for example between 5 cm and 15 cm. This distance may depend on the temperature imposed on the wire in the reaction zone, as will be detailed below.
• the reactor 120 is further provided with two centering devices 125 present respectively at the two junctions between the horizontal part 121 and the two vertical parts 122 and 123 of the reactor 120.
• the centering devices 125 can take the form of rollers provided with a groove (not visible in the figures) which have the function of keeping the wire 150 centered in the reactor 120.
• the centralizers 125 are present inside the reactor 120.
• the second vertical part 123 and the horizontal part 121 each include at least one additional centering device 124a and 124b. All or part of the additional centering devices 124a and 124b can locally narrow the section of the reactor 120. One could also add an additional centering device (not shown) in the first vertical part 122.
• the device is provided with a scrolling device which may comprise a first mandrel (not shown) from which the yarn 150 can be unwound, the first mandrel can be a storage mandrel for the yarn 150 before it is coated, and a second mandrel (not shown) on which the wire 150 can be wound once coated.
• the wire may be continuous, extending continuously between the first mandrel and the second mandrel through reactor 120. Wire 150 may be moved through reactor 120 during the process. A segment to be treated of the wire 150 can thus circulate in the reactor 120 from the first mandrel to the second mandrel. Centering elements 125 and 124a-b of wire 150 in reactor 120 reduce the risk of wire 150 touching the wall of reactor 120. Scroll the wire 150 in the device 100 continuously or step by step.
• the running of the wire 150 can be controlled as a function of the process parameters, and in particular of the deposition kinetics, in order to finely control the thickness of the coating deposited.
• the wire 150 circulates in the reactor 120 and is partly immersed in the liquid precursor 140.
• the movement of the wire can be continuous (uninterrupted) or step by step.
• a segment 156 of the treated wire initially circulates in the first vertical part 122 without being immersed in the liquid precursor 140, the segment is then immersed in the liquid precursor 140 in the first vertical part 122, then remains immersed in the liquid precursor 140 in the horizontal part 121 and in part of the second vertical part 123.
• the segment of the wire 150 then leaves the liquid precursor 140 to be routed to the reaction zone 115 where the coating is formed on its surface from the phase gas under microwave field.
• the liquid precursor 140 is here evaporated by thermal conduction along the wire from the segment 156 heated in the reaction zone 115 to the meniscus 145.
• the reactor 120 is provided with at least one introduction channel 154a, 154b of a diluent gas 200a, 200b.
• the reactor 120 is here provided with several channels 154a, 154b for introducing the diluent gas 200a, 200b.
• the diluent gas 200a and 200b introduced into each can be identical or different, for example the diluent gas 200a can be reactive and the diluent gas 200b inert.
• the channel or channels 154a, 154b open out under the meniscus 145 of precursor 140 liquid.
• the channel(s) 154a, 154b can be carried by the second vertical part 123 and emerge therein.
• the channel or channels 154a, 154b can be located below the reaction zone 115.
• the diluent gas 200a, 200b mixes directly with the liquid precursor 140, as illustrated in the example of the 1.
• the diluent gas 200a, 200b is here brought into contact with the liquid precursor 140 during its introduction into the reactor 120.
• the diluent gas 200a, 200b can be introduced into the second vertical part 123.
• the mixture of the diluent gas 200a , 200b and the precursor 140 can take place in the second vertical part 123.
• the mixing of the diluent gas 200a, 200b and the precursor 140 can take place in a zone of displacement of the wire 150.
• the mixing of the diluent gas 200a, 200b and of the precursor 140 can take place below the reaction zone 115.
• the diluent gas 200a, 200b bubbles in the liquid precursor 140 present in the reactor 120.
• the mixture between the diluent gas 200a, 200b and the precursor 140 is realized separated before the arrival of the gaseous phase in the reaction zone 115.
• the distance separating the mixing zone between the precursor and the diluent gas and the reaction zone can be less than or equal to 15 cm, and for example between 1 cm and 15 cm.
• the diluent gas 200a, 200b is first mixed with the liquid precursor 140, which is then evaporated so as to obtain the gaseous phase comprising a mixture of the diluent gas and the coating precursor at the vapor state, this gaseous phase then propagates towards the reaction zone 115 and is introduced into this zone 115 so as to form the coating on the treated yarn.
• the diluent gas is separate from the vaporous coating precursor.
• the reaction zone 115 is in particular devoid of liquid coating precursor, the coating precursor being there only in vapor form in the example illustrated.
• the reactor does not have a heating system at the level of the liquid precursor 140.
• the system can nevertheless include a device for regulating the temperature (not shown) of the liquid precursor 140 in order to maintain it at a moderate temperature if this is desired depending on the precursor used, for example less than or equal to 20°C.
• the diluent gas 200a, 200b can be reactive or inert with respect to the precursor 140.
• the diluent gas 200a, 200b can react with the carbon of the coating precursor in order to consume the excess carbon compared to the stoichiometry desired for deposition before introduction of the coating precursor in the vapor state into the reaction zone 115.
• This reaction can take place in the gas phase before its introduction into the reaction zone 115, the diluent gas 200a, 200b reacting with the excess carbon of the precursor vapor coating.
• the diluent gas 200a, 200b can react with the excess carbon of the coating formed in the reaction zone 115.
• the reactive diluent gas 200a, 200b can be hydrogen or ammonia.
• the inert diluent gas 200a, 200b can be dinitrogen or argon.
• the liquid coating precursor 140 can be a silicon carbide precursor.
• precursor 140 may comprise one or more silicon atoms, one or more carbon atoms and optionally hydrogen.
• precursor 140 may comprise at least one Si—C bond, and optionally at least one Si—H bond and/or at least one Si—Si bond.
• usable silicon carbide precursors 140 mention may be made of 1,3,5 Trisilacyclohexane (TSCH), hexamethyldisilane (HMDS) or even triethylsilane.
• TSCH 1,3,5 Trisilacyclohexane
• HMDS hexamethyldisilane
• the temperature of the wire 150 in the reaction zone 115 can be between 800° C. and 1300° C., for example between 950° C. and 1200° C.
• coating precursor 140 may be a boron nitride precursor.
• the precursor 140 may comprise one or more boron atoms, one or more nitrogen atoms and hydrogen, and optionally one or more carbon atoms.
• Precursor 140 can be an aminoborane.
• Precursor 140 may comprise at least one B-N bond and optionally at least one N-C bond and/or at least one B-C bond.
• precursor 140 of boron nitride that can be used, mention may be made of tris(dimethylamino)borane (TDMAB) or triethylaminoborane (TEAB) optionally mixed with ammonia NH3.
• TDMAB tris(dimethylamino)borane
• TEAB triethylaminoborane
• the use of TDMAB can advantageously be accompanied by the use of a diluent gas reactive with the carbon in order to consume the excess carbon.
• the temperature of the wire 150 in the reaction zone 115 can be between 900° C. and 1500° C., for example between 1200° C. and 1400° C.
• the portion of the reactor 120 between the meniscus 145 and the reaction zone 115 can be placed under negative pressure to promote the evaporation of the precursor towards the reaction zone 115.
• the pressure in this portion can nevertheless remain greater than or equal to the vapor pressure of the precursor. to the temperature at the level of the meniscus 145, in order to avoid too rapid evaporation of the precursor.
• the pressure in this portion can generally range from 1 mbar to 3 bar. The choice of the pressure to be imposed as a function of the precursor used falls within the general knowledge of those skilled in the art.
• the pressure in the reactor can be greater than or equal to 3 mbar at 30°C or greater than or equal to 160 mbar at 100°C.
• the pressure in the reactor can for example be greater than or equal to 3 mbar at 75°C or greater than or equal to 16 mbar at 96°C.
• the pressure in the reactor can for example be greater than or equal to 125 mbar at 50°C.
• the flow rate of diluent gas introduced into the reactor 120 can be greater than or equal to the flow rate of precursor 140 evaporated or introduced into the reaction zone 115, for example greater than or equal to twice this flow rate. This makes it possible to obtain a gas phase having a volume fraction of diluent gas greater than or equal to the volume fraction of precursor in the vapor state.
• the reactor 120 also comprises additional inlet 157a, 157c and gas outlet 159a, 159c channels downstream of the reaction zone 115.
• the segment 156 passes successively into the reaction zone 115 then at the level of these channels 157a, 157c and 159a, 159c.
• a buffer gas for example dinitrogen or argon, can be introduced through the channels 157a, 157b and 157c and 159a, 159b and 159c in order to avoid any risk of parasitic deposit at the mandrels of the running device.
• the gas outlets 159a-159c make it possible to evacuate the buffer gas introduced as well as any residual vapor phase precursor.
• each of the two vertical parts 122 and 123 can comprise at least one pair of inlet channel 157a-c and outlet channel 159a-c.
• the example of reactor 120 illustrated comprises a first pair of inlet 157a and outlet 159a of buffer gas located between the reaction zone 115 and a centering device 124a, a second pair of inlet channel 157b and outlet channel 159b of gas buffer located on the vertical part 122 upstream of the reaction zone 115 and a third pair of buffer gas inlet channel 157c and outlet channel 159c located downstream of the centering device 124a. Note in particular a reduction in the passage section at the level of the centering device 124a, downstream of the reaction zone 115.
• the reduction of the passage section is not necessarily ensured by the addition of a specific part 124a and can simply be obtained by a local modification of the diameter of the tube forming the reactor. In a variant not shown, the system does not have this passage section reduction.
• device 101 in FIG. 2 uses the same structure as device 100 in FIG. 1 but completes it in particular by adding an additional heat treatment zone 210.
• the parts identical to device 100 of FIG. 1 carry the same reference symbols and are not described again for reasons of brevity.
• the reactor 220 of FIG. 2 is thus equipped with an additional treatment zone 210 which is distinct from the reaction zone 115 and downstream from the latter.
• the segment 156 of treated wire passes successively through the reaction zone 115 then through the additional treatment zone 210 where it undergoes a heat treatment.
• This zone 210 can thus be provided with heating means, it is again possible to use microwave heating but those skilled in the art will recognize that other heating means are possible.
• the temperature imposed during the heat treatment in zone 210 can be greater than or equal to the temperature in reaction zone 115.
• the temperature in zone 210 can be greater than or equal to 1100° C., for example greater than or equal to 1200° C. This temperature can be between 1100°C and 1700°C, for example between 1200°C and 1500°C.
• the heat treatment carried out in zone 210 can result in dehydrogenation, crystallization or stabilization of the coating formed in reaction zone 115. It is possible, for example, to carry out, in zone 210, crystallization or stabilization. of a coating of boron nitride by imposing on the wire a temperature of between 1200°C and 1500°C. As a variant, it is possible to carry out a heat treatment for the dehydrogenation of a silicon carbide coating by imposing on the wire 150 a temperature of between 1100° C. and 1500° C.
• the reactor 220 is also provided with an inlet 157d and an outlet 159d for buffer gas on either side of the zone 210 in order to inert this zone and avoid parasitic deposits.
• a reactive gas can be introduced through the inlet 157d allowing the dehydrogenation of the coating formed in the reaction zone 115.
• FIG. 2 illustrates an additional treatment zone 210 distinct and offset from the reaction zone 115 along the direction of movement of the wire 150. Nevertheless, the scope of the invention is not departed from when the reaction zone 115 is heated to a sufficient temperature to both carry out the deposit on the wire as well as a heat treatment for modifying this deposit, for example dehydrogenation, crystallization or stabilization as carried out in zone 210. In the latter case, given the high temperatures imposed in the reaction zone 115, it may be advantageous to spare a sufficient distance d between the reaction zone 115 and the precursor meniscus 145, in order to carry out the desired additional treatment without disturbing the evaporation of the precursor by thermal conduction along the wire. By way of example, this distance may be greater than or equal to 5 cm, for example between 5 cm and 15 cm.
• FIG. 3 which will now be described, relates to a device 102 in which the diluent gas is mixed directly with the precursor in the vapor state. Parts identical to those described above are omitted for reasons of brevity.
• the reactor 320 illustrated in FIG. 3 comprises at least one diluent gas introduction channel 254a, 254b which opens between the meniscus 145 and the reaction zone 115.
• the diluent gas no longer bubbles in the liquid precursor 140 but is mixed with the precursor in the vapor state upstream of the reaction zone 115 after the evaporation of the liquid precursor 140 in the reactor 320.
• the diluent gas is here introduced above the liquid precursor meniscus 140.
• the gaseous phase obtained after this mixture then propagates to the reaction zone 115 to form the coating.
• an additional treatment zone 210 can be added downstream of the reaction zone 115 as described in FIG. 2.
• the variant of FIG. 4 relates to the case where the precursor is directly introduced in the vapor state into the reactor.
• the diluent gas 200a, 200b is injected into the reactor 420 and mixed directly with a flow of precursor in the vapor state 240.
• the pressure in the reactor 420 can be between 1 mbar and 3 bars.
• the flow rate of diluent gas 200a, 200b introduced into the reactor 420 may be greater than or equal to the flow rate of precursor 240 in the vapor state introduced into the reactor 420, for example greater than or equal to twice this flow rate of precursor introduced into the reactor 420. This makes it possible to obtain a gas phase having a volume fraction of diluent gas greater than or equal to the volume fraction of the precursor in the vapor phase.
• the figures illustrate devices 100-103 in which a single yarn 150 is treated but the invention also applies to simultaneous treatment of a plurality of yarns in the reactor.
• the treatment of a wire can, moreover, comprise several passages of the wire in the reactor so as to deposit each time an additional coating on the coating formed during the preceding passage.
• the coating thus deposited can be monomaterial or multimaterial.
• there is no liquid precursor in the reaction zone however the scope of the invention is not departed from when liquid precursor is present in the reaction zone in addition to the gaseous phase introduced into this zone.
• the method can continue by manufacturing a part in composite material from several wires coated in the manner described above.
• the manufacture of the part may thus include the manufacture of a fiber preform, intended to form the fiber reinforcement of the part, from a plurality of coated yarns.
• the fibrous preform can be obtained by weaving, for example by three-dimensional weaving, of the coated yarns.
• An interlock weave weave can be used, for example.
• the porosity of the fibrous preform can then be filled with a die in order to obtain the composite material part.
• the matrix may be an at least partially ceramic matrix. In a manner known per se, this matrix can be formed by chemical vapor infiltration or by a melt infiltration technique (“Melt-Infiltration”; “MI”).
• MI melt infiltration
• the matrix may include silicon carbide.
• the part obtained can be a part of a turbomachine, for example of an aeronautical turbomachine or an industrial turbomachine.
• the part obtained can be a turbine part.
• the part obtained can be a turbomachine blade, for example a turbine blade.
• the piece obtained can alternatively be a sector of a turbine ring.
• Example 1 deposit of silicon carbide
• FIG. 1 A test was carried out using the device 100 illustrated in FIG. 1.
• the precursor used was HMDS, the temperature of the reaction zone 115 was maintained at 1070° C. for 3 minutes. Nitrogen was used as the diluent gas 200a, 200b. The volume fractions of diluent gas and precursor in the gas phase were each 50%. The deposition of SiC is effective with kinetics in the reaction zone of 500 ⁇ m/min.
• the thread was static.
• Figure 5 is a cross-sectional view of the resulting coated yarn.
• Example 2 deposition of boron nitride
• FIG. 1 A test was carried out using the device 100 illustrated in FIG. 1.
• the precursor used was TDMAB, the temperature of the reaction zone 115 was maintained at 1270° C. for 12 minutes.
• Nitrogen was used as the diluent gas 200a, 200b.
• the volume fractions of diluent gas and precursor in the gas phase were each 50%.
• the deposition of BN is effective with a kinetics in the reaction zone of 1.7 ⁇ m/min.
• the thread was static.
• a composite material part was then formed from the coated wires obtained.
• Figure 6 is a cross-sectional view of the resulting coated yarn.

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