Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/93—Batch processes
  • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
  • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
  • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0093—Wafer bonding; Removal of the growth substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
  • H01L33/502—Wavelength conversion materials
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/52—Encapsulations
  • H01L33/56—Materials, e.g. epoxy or silicone resin
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/12—Passive devices, e.g. 2 terminal devices
  • H01L2924/1204—Optical Diode
  • H01L2924/12041—LED
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

• the present invention relates to an electronic device for capturing or transmitting a physical quantity.
• the invention also relates to a method of manufacturing an electronic device for capturing or transmitting a physical quantity.
• the light elements constituting the screen In the field of light display screens, the light elements constituting the screen must be arranged in a matrix fashion. The precision necessary for the formation of such a matrix increases as the resolution expected for the screens increases. It is known to produce the light-emitting diodes which constitute the light-emitting elements on a first support, for example a silicon or sapphire wafer, and to transfer them to a second support intended to form an integral part of the screen. The electrical connections which make it possible to supply the light-emitting diodes thus transferred electrically are made at the level of the second support.
• the electrical connection of the upper part of the light-emitting diodes and the electrical connection of their lower part remain difficult to achieve without risk of unintentional short-circuit, due to the distance between them which may be only a few tens of micrometers.
• thermocompression method is often used to create an electrical connection between the light elements and the second medium.
• a solution has performance that can be improved because it involves the use of a high temperature incompatible with the light conversion elements which can cover the light-emitting diodes of the light elements.
• the sensors and the transmitters of parameters or physical quantities must be arranged in a matrix fashion.
• the precision necessary for the formation of such a matrix increases as the resolution expected for the screens increases and the same problems as raised previously are highlighted.
• the The high topography of the sensors or transmitters concerned makes their integration over large surfaces more complex.
• the object of the present invention is to provide an electronic device and a manufacturing method making it possible to respond to all or part of the problems presented above.
• one aim is to provide a solution meeting at least one of the following objectives: allowing the supply of an electronic device for capturing or transmitting a physical quantity limiting the risks of short-circuit; enable the supply of an electronic device for capturing or transmitting a physical quantity at a lower cost; limit the risk of damage to light conversion elements; allow the supply of an electronic device for capturing or transmitting a physical quantity having large dimensions; allow the supply of an electronic device for capturing or transmitting a physical quantity having high performance.
• each active element having a thickness considered in a transverse direction oriented transversely to the lower support and each comprising a lower portion electrically connected to at least one of the lower conductive elements and an upper portion disposed on the side opposite to the lower support by with respect to the lower portion in the transverse direction, each active element comprising an active part capable of changing state when an external parameter external to said active part is applied to said active part;
• each active element is electrically connected to at least one of the upper conductive elements and each active element externally defines, depending on the thickness, at least one side wall which extends laterally around the active element; at least a first electrically insulating element is arranged between at least a part of said at least one side wall of at least two adjacent active elements arranged side by side on the support surface of the lower support so as to electrically insulate the walls from each other lateral separated by the first electrically insulating element; the first electrically insulating element is arranged between at least one of the upper conductive elements and at least one of the lower conductive elements such that said at least one upper conductive element and said at least one lower conductive element separated by the first element electrically insulating are electrically isolated from each other.
• At least one of the active elements comprises a control device capable of influencing at least one parameter associated with the active part of said active element.
• the active part of at least one of the active elements comprises a light emitting part capable of emitting at least one light radiation when the external parameter applied to the active part is an electrical quantity from at least one of the upper conductive elements and the lower conductive elements.
• control device is able to modulate at least one emission parameter relating to the light radiation capable of being emitted by the light emitting part.
• control device comprises at least one transistor.
• At least one of the upper conductive elements is formed, on the one hand, by a transparent electrical conductor in electrical contact with the light emitting part of the active element and having properties of transparency vis-à-vis the light radiation capable of being emitted by the emission part and, on the other hand, by a metallic electrical conductor in electrical contact with the transparent electrical conductor.
• the metallic electrical conductor of the upper conductive elements is arranged so as not to cover, at least in the transverse direction, the emission part of the active elements.
• the light emitting part of at least one of the active elements comprises at least one light emitting diode.
• said light-emitting diode is wire-shaped having micrometric dimensions and of which a main axis of extension is generally parallel to the transverse direction.
• At least two of the light emitting diodes of the light emitting part of at least one of the active elements are able to emit at least two light rays having different wavelengths.
• At least one of the light-emitting diodes of the light-emitting part of at least one of the active elements is surrounded at least in part by photoluminescent materials capable of transforming the light radiation. emitted by the corresponding light emitting diode.
• the active part of at least one of the active elements comprises a device for measuring said external parameter configured to change state when said external parameter is applied to said active part.
• control device determines the change of state of the measuring device of the active part and delivers an output signal representative of this determination between at least one of the upper conductive elements and one. lower conductive elements.
• At least one of the measurement devices is an electrical component selected from a sensor and a transducer.
• the active elements are obtained on an external support separate from the lower support prior to a transfer of said active elements to said lower support.
• the first electrically insulating element comprises a set of metallic particles coated in an electrically insulating material adapted so that the first electrically insulating element is able to vary between a first state of electrical insulation in which the first electrically insulating element does not undergo crushing pressure and where a majority of the metal particles do not touch each other and a second state of anisotropic electrical conductivity in which a majority of the metal particles are in electrical contact under the effect of a pressure d crushing applied in the transverse direction.
• the first electrically insulating element is arranged in a contact portion arranged between the lower portion of at least one of the active elements and at least one of the lower conductive elements connected with the lower portion.
• the lower portion of the active element being brought into electrical contact with the lower conductive element by the passage of the first electrically insulating element from its first state of electrical insulation to its second state of directional electrical conductivity by the application of pressure crushing on the contact portion by the active element and / or the lower support, in particular resulting from the action of an electrical bonding device on at least one element taken from the group comprising the active element and the support lower, so that all or part of the metal particles of the first electrically insulating element, located in the contact portion, provide the electrical connection between the lower portion of the active element and the lower conductive element.
• a second electrically insulating element distinct from the first electrically insulating element, is arranged between at least two adjacent active elements disposed side by side on the support surface of the lower support and between the upper conductive elements and the lower conductive elements so as to electrically isolate the members of at least one of the following two groups from one another:
• the metallic electrical conductor of at least one of the upper conductive elements is arranged between the second electrically insulating element and the transparent electrical conductor.
• At least one of the upper conductive elements delimits a local portion arranged at the level of the upper portion of the active element to which it is connected, said local portion of the upper electrical element being formed at the level of the upper portion of the active element to which it is connected. less in part by adaptive lithography.
• the external parameter is included in the group formed by a sound wave, a light radiation, an electromagnetic radiation, an electric current, a potential difference and a pressure wave.
• the invention also relates to the implementation of a method of manufacturing an electronic device for capturing or transmitting a physical quantity, the method comprising the following steps:
• E2 provide a plurality of active elements having a thickness considered in a transverse direction oriented transversely to the lower support and each comprising a lower portion capable of being electrically connected to at least one of the lower conductive elements, an upper portion disposed on the side opposite to the lower support with respect to the lower portion in the transverse direction and an active part capable of changing state when an external parameter external to said active part is applied to said active part, each active element supplied at step E2 ) delimiting externally, according to the thickness, at least one side wall which extends laterally around at least the lower portion and the upper portion;
• step E4) forming upper conductive elements electrically insulated from one another so that the upper portion of each active element is electrically connected to at least one of the upper conductive elements formed; at the end of step E4), the first electrically insulating element is further arranged between at least one of the upper conductive elements and at least one of the lower conductive elements so that said at least upper conductive element and said at least one lower conductive element separated by the first electrically insulating element are electrically isolated from each other.
• the active elements provided in step E2) are obtained on an external support different from the lower support prior to a transfer, implemented during step E2), of said active elements to the lower support .
• the first electrically insulating element comprises a set of metal particles coated in an electrically insulating material adapted so that the first electrically insulating element is able to vary between a first state of electrical insulation in which the first electrically insulating element does not undergo crushing pressure and where a majority of the metal particles do not touch each other and a second directional electrical conductivity state in which a majority of the metal particles are in electrical contact under the effect of a pressure d 'crushing step E3) comprising a sub-step E31) consisting in forming the first electrically insulating element in a contact portion arranged between the lower portion of at least one of the active elements and at least one of the elements lower conductors adapted to be connected with the lower portion of this active element; the method comprising a step E21) consisting in applying the crushing pressure on the contact portion by a relative movement between the active element and the lower support, the relative movement resulting from the action of an electrical bonding device on at least one element taken from the group comprising the active element and
• FIG. 1 is a schematic sectional view of several steps of a first example of a method of manufacturing a first embodiment of an electronic device according to the invention.
• FIG. 2 is a schematic sectional view of several steps of a second exemplary method of manufacturing a second embodiment of an electronic device according to the invention.
• FIG. 3 is a schematic sectional view of several steps of a third exemplary manufacturing method of a third embodiment of an electronic device according to the invention.
• FIG. 4 is a schematic sectional view of several steps of a fourth exemplary method of manufacturing a fourth embodiment of an electronic device according to the invention.
• FIG. 5 is a schematic sectional view of several steps of a fifth exemplary manufacturing method of a fifth embodiment of an electronic device according to the invention.
• FIG. 6 is a schematic sectional view of several steps of a sixth exemplary method of manufacturing a sixth embodiment of an electronic device according to the invention.
• FIG. 7 is a schematic top view of an example of an electronic device of the invention.
• the invention relates firstly to an electronic device 10 for light emission.
• this electronic device 10 can equally well be adapted for the capture or the emission of a physical quantity.
• capture is meant similarly a “measurement”.
• the physical quantity to be captured can be a pressure, a pressure wave, a sound wave, a humidity level, a temperature, an electromagnetic field, visible or invisible light radiation, an electric current or even a potential difference.
• the physical quantity to be emitted can be of the same nature as that to be captured or measured or of a different nature.
• the electronic device 10 first of all comprises a lower support 11.
• the lower support 11 is for example electrically insulating and formed by at least one glass plate.
• the lower support 11 can also be electrically conductive and formed by at least one metal plate.
• the lower support 11 can also comprise electrically conductive tracks insulated from one another and formed on the surface or inside the lower support 11.
• the lower support 11 can be formed in a crystalline or non-crystalline material and can also include active or non-crystalline components. passive, like transistors or memories.
• the lower support 11 can, for example, constitute a support for a light display screen.
• the electronic device 10 also comprises lower electrically conductive elements 12 electrically insulated from one another and formed at least in part on a support surface of the lower support 11.
• the lower conductive elements 12 can be formed by adaptive or non-adaptive photolithography and / or by etching. as well as by vacuum or wet deposition processes of metals such as for example copper, aluminum, silver, gold, titanium, palladium, nickel or alloys formed for example from these metals or multilayers with different layers of different metals chosen, for example, from the metals mentioned above.
• the electronic device 10 further comprises a plurality of active elements 13 having a thickness H considered in a transverse direction oriented transversely to the lower support 11.
• the thickness H of the active elements can be between 0.5 ⁇ m and 200 ⁇ m.
• the active elements 13 are obtained on an external support separate from the lower support 11 prior to a transfer of said active elements 13 to the lower support 11. This is advantageous because very often the active elements 13 require training conditions. specific, such as high temperatures above 500 ° C which could damage the lower support 11.
• the active elements 13 comprise a lower portion 13a electrically connected to at least one of the lower conductive elements 12.
• the term “electrically connected” is understood to mean “connected by direct physical contact” or “connected by indirect contact with an intermediary. one or more conductive elements ”such as for example an adhesive containing metallic particles or carbon nanotubes or else a pressure sensitive or temperature sensitive adhesive.
• the active elements 13 also include an upper portion 13b arranged on the side opposite the lower support 11 with respect to the lower portion 13a in the transverse direction.
• the lower portions 13a and the upper portions 13b may comprise one or more electrically conductive electrodes which promote contact with the lower conductive elements 12 and / or with the upper electrically conductive elements 14 mentioned below.
• the upper portion 13b of each active element 13 is electrically connected to at least one of the upper conductive elements 14.
• the upper portion 13b of the active element 13 comprises two electrodes, each being connected to an element. 14 different top conductor.
• Each active element 13 comprises an active part capable of changing state when an external parameter external to the active part is applied to the active part.
• the external parameter is, for example, a pressure, a pressure wave, a sound wave, a humidity level, a temperature, an electromagnetic field, visible or invisible light radiation, an electric current or a potential difference.
• Each active element 13 defines externally, along the thickness H, at least one side wall 13c which extends laterally around the active element 13.
• the electronic device 10 also comprises the upper electrically conductive elements 14, which are electrically insulated from each other.
• Each upper conductive element 14 is electrically connected to the upper portion 13b of at least one of the active elements 13.
• the term “electrically connected” is understood to mean “connected by direct physical contact” or else “connected by indirect contact with an intermediary. one or more intermediate conductive elements ”.
• the electronic device 10 further comprises a first electrically insulating element 16 which is arranged between at least a part of a side wall 13c of at least two adjacent active elements 13 arranged side by side on the support surface of the lower support 11.
• the first electrically insulating element 16 enables the side walls 13c separated from each other to be electrically insulated by the first electrically insulating element 16.
• the first electrically insulating element 16 is further arranged between at least one of the upper conductive members 14 and at least one of the lower conductive members 12 such that said at least one upper conductive member 14 and said at least one lower conductive member 12 separated by the first member electrically insulating 16 are electrically insulated from each other.
• a photonic glue or a conductive glue sensitive to heat, pressure, light, or an electric field can be used to create the electrical contact between the lower portion 13a of one of the active elements 13 and one of the conductors. lower 12.
• the lower portion 13a of the active elements 13 comprises at least one metal fixing element delimiting at least one part adapted to be fixed, by the application of a fixing pressure, to the lower conductive elements 12 of so as to establish the electrical connection between the lower portion 13a of the active element 13 and the lower electrical conductors 12.
• metallic fasteners are spikes, microtubes or even micropillars made of copper.
• the lower portion 13a of the active elements 13 is electrically connected to the lower conductive elements 12 by means of an adhesive comprising particles containing silver.
• the active elements 13 are connected to the lower conductive elements 12 before the formation of the first electrically insulating element 16.
• the first electrically insulating element 16 comprises a set of metal particles 16a, for example based on silver or else in nickel-gold alloy (Ni-Au), coated in a electrically insulating material 16b.
• This assembly is adapted so that the first electrically insulating element 16 can vary between a first state of electrical insulation in which the first electrically insulating element 16 does not undergo crushing pressure and where a majority of the metal particles 16a do not touch each other. pas and a second state of anisotropic electrical conductivity in which a majority of the metal particles 16a are in electrical contact under the effect of a crushing pressure applied in the transverse direction.
• the metal particles 16a are grouped together to touch each other and thus form an electrical contact and the remainder of the first electrically insulating element 16 is formed by the electrically insulating material 16b thus devoid of the metal particles 16a.
• the first electrically insulating element 16 is also formed in a contact portion arranged between the lower portion 13a of at least one of the active elements 13 and at least one lower conductive elements 12 connected with the lower portion 13a of this active element 13.
• the lower portion 13a of the active element 13 is brought into electrical contact with the lower conductive element 12 through the passage of the first electrically insulating element 16 from its first state of electrical insulation to its second state of directional electrical conductivity.
• This is made possible by the application of the crushing pressure, expressed in the figures by arrows in bold, on the contact portion by the active element 13 and / or the lower support 11.
• the application of the pressure crushing results from the action of an electrical bonding device on the active element 13 and / or the lower support 11.
• the metal particles 16a of the first electrically insulating element 16 located in the portion of contact, provide the electrical connection between the lower portion 13a of the active element 13 and the lower conductive element 12.
• the electrically insulating material 16b thus dissociated from the metal particles 16a surrounds the side walls 13c of the 'active element 13 and thus allows the electrical insulation between the lower conductive elements 12 and the upper conductive elements 14, as well as the electrical insulation of the active elements 13 between them at least laterally of course.
• the electrically insulating material 16b can be a resin, an oxide or even a polymer.
• the electrically insulating element 16 after spinning deposition or lamination can undergo chemical mechanical polishing so that, in the end, the upper portion 13b of the active elements 13 is not covered by a insulation and that the resumption of electrical contact of the upper conductive elements 14 is thus facilitated.
• At least one of the active elements 13 comprises a control device 19 capable of influencing at least one parameter associated with the active part of this active element 13.
• the control device 19 can thus comprise at least one transistor of CMOS and / or bipolar technology and / or of thin film transistor (TFT) type or any other technology such as Gan (mixture of gallium and nitrogen) or Gan on silicon. It can also include memories or passive components. It is for example supplied by a voltage or a current coming from the lower conductive elements 12 and / or the upper conductive elements 14.
• the active part of at least one of the active elements 13 comprises a light emitting part.
• the light emitting part is configured to be able to emit at least one light radiation or electromagnetic radiation when the external parameter applied to the active part is an electric current or a voltage resulting directly or indirectly from at least one. among the upper conductive elements 14 and the lower conductive elements 12.
• a control device control 19 it can for example make it possible to modulate at least one emission parameter relating to the light radiation capable of being emitted by the light emitting part.
• an emission parameter can be the light intensity, the light emission angle or the emitted color.
• the controller 19 is responsive to information transmitted optically.
• the control device 19 can thus integrate a photodiode making it possible to modulate the light intensity emitted by the active element 13 to which it is linked as a function of the information received on said integrated photodiode.
• the light emitting part of at least one of the active elements 13 comprises at least one light emitting diode.
• This light-emitting diode can be of wire form having micrometric or even nanometric dimensions, and has a main axis of extension generally parallel to the transverse direction mentioned above.
• the light emitting diode can also be of the two-dimensional type with a micrometric height.
• at least two of the light emitting diodes of the light emitting part of at least one of the active elements 13 are able to emit at least two light rays having different wavelengths.
• At least one of the light-emitting diodes of the light-emitting part of at least one of the active elements 13 is surrounded at least in part by photoluminescent materials capable of transforming the light radiation emitted by the corresponding light emitting diode.
• At least one of the upper conductive elements 14 is formed, on the one hand, by a transparent electrical conductor 14a in direct physical electrical contact, or indirectly with by means of conductive elements, with the light emitting part of the luminous active element 13 and, on the other hand, by a metallic electrical conductor 14b in electrical contact with the transparent electrical conductor 14a.
• the transparent electrical conductor 14a advantageously has properties of transparency with respect to the light or electromagnetic radiation capable of being emitted by the emission part.
• the metallic electrically conductive material 14b of the upper conductive elements 14 is arranged so as not to cover, at least in the transverse direction, the emission part of the active elements 13.
• a display screen can thus be manufactured with light-emitting diodes associated or not with a control device 19 and formed on an external substrate then transferred and electrically connected with the lower conductive elements 12 and the upper conductive elements 14, the electrical insulation between the different elements being provided by the first electrically insulating element 16.
• the active part of at least one of the active elements 13 comprises a device for measuring said external parameter, configured to change state when said external parameter is applied to said active part.
• at least one of the measuring devices is an electrical component chosen from among a sensor, a transducer, a photodiode, an ultrasonic sensor of the PMUT type from the English “Piezoelectric Micromachined Ultrasonic Transducers” or even CMUT from the English “Capacitive Micromachined Ultrasonic Transducers”.
• the control device 19 can determine the change of state of the measuring device of the active part and delivers an output signal representative of this determination between at least one of the conductive elements. upper 14 and one of the lower conductive elements 12. If the external physical quantity, equivalent to the external parameter, is a sound wave or a pressure wave or a pressure, the active element 13 thus configured can capture or measure this external parameter . A voltage and / or a current can thus be generated.
• An ultrasonic imager can thus be manufactured with transducers and ultrasonic sensors formed on an external substrate then transferred and electrically connected with the lower conductive elements 12 and the upper conductive elements 14, the electrical insulation between the various elements being provided by the first. electrically insulating element 16.
• a second electrically insulating element 17, distinct from the first electrically insulating element 16 is arranged between at least two adjacent active elements 13 arranged side by side. side on the support surface of the lower support 11 and between the upper conductive elements 14 and the lower conductive elements 12 so as to electrically insulate the adjacent active elements 13 from one another, separated from each other by the second electrically insulating element 17 and / or the elements upper conductors 14 and the lower conductive elements 12 separated from each other by the second electrically insulating element 17.
• the metallic electrical conductor 14b of at least one of the upper conductive elements 14 is arranged between the second electrically insulating element 17 and the transparent electric conductor 14a.
• At least one of the upper conductive elements 14 delimits a local portion arranged at the level of the upper portion 13b of the active element 13 to which it is connected, said local portion of the upper electrical element 14 being formed in the middle. less in part by adaptive lithography.
• An advantage of such electronic devices 10 also comes from the fact that it is possible to power the lower and upper electrical contacts on different topographic levels, which limits short circuits.
• Another advantage of such electronic devices 10 is that their implementation can be carried out with techniques which do not require high temperature and pressure. These techniques are also suitable for applications on large surfaces, for example greater than that of a commercially available silicon disc. This is advantageous for producing large-dimension light display devices or physical quantity capture devices involving many sensors, such as ultrasound imaging devices by echography.
• An additional advantage of such electronic devices 10 is that the resumption of electrical contact with the upper electrical contacts is facilitated.
• Another advantage of such electronic devices 10 is that the electrical efficiency of the contact pick-up at the higher level is improved because the voltage losses are attenuated.
• the invention also relates to a method of manufacturing an electronic device 10 for capturing or transmitting a physical quantity.
• the method is illustrated in Figures 1 to 6 and comprises the following steps:
• each active element 13 having a thickness H considered in a transverse direction oriented transversely to the lower support 11 and each comprising a lower portion 13a capable of being electrically connected to at least one of the lower conductive elements 12, an upper portion 13b disposed on the side opposite the lower support 11 relative to the lower portion 13a in the direction transverse and an active part capable of changing state when an external parameter external to the active part is applied to the active part, each active element 13 supplied in step E2) delimiting externally, according to the thickness H, at least a side wall 13c which extends laterally around at least the lower portion 13a and the upper portion 13b;
• the lower portion 13a of at least one of the active elements 13 is electrically connected to at least one of the lower conductive elements 12.
• the active elements 13 are formed and connected to the lower conductive elements 12 before all or part of the side walls 13c of the active elements 13 are surrounded by the first electrically insulating element 16.
• the first electrically insulating element 16 is first deposited in particular on the lower conductive elements 12.
• the active elements 13 are formed and are connected to the lower conductive elements 12, for example through the first electrically insulating element 16 as explained below or via a recess of the first insulating element 16 prior to the connection of the active elements 13 to the lower conductive elements.
• the first electrically insulating element 16 is further arranged between at least one of the upper conductive elements 14 and at least one of the lower conductive elements 12 of so that said at least upper conductive element 14 and said at least one lower conductive element 12 separated by the first electrically insulating element 16 are electrically insulated from each other. This makes it possible to limit short circuits between the different levels of conductive elements, for example during the formation of the electrically conductive elements 14.
• a planarization step can be carried out after step E3) in order to improve the making of contact at the level of the upper portion 13b of the active elements 13.
• the step of planarization can for example be carried out by the action of a chemical mechanical polishing device or with a dry etching based on reactive ions.
• the active elements 13 provided in step E2) are obtained on an external support different from the lower support 11 prior to a transfer, implemented during step E2), of said active elements 13 towards the lower support 11.
• This lower support 11 would for example not withstand high temperatures or would be too extensive to be compatible with the substrates allowing the formation of the active elements 13.
• the first electrically insulating element 16 formed in step E3) comprises a set of metal particles 16a coated in an electrically insulating material 16b suitable so that the first electrically insulating element 16 is able to vary between: a first state of electrical insulation in which the first electrically insulating element 16 does not undergo crushing pressure and where a majority of the metal particles 16a do not touch each other, and a second state of directional electrical conductivity in which a majority of the metal particles 16a are in electrical contact under the effect of a crushing pressure.
• Step E3) then comprises a step E31) consisting in forming the first electrically insulating element 16 in a contact portion arranged between the lower portion 13a of at least one of the active elements 13 and at least one of the elements lower conductors 12 capable of being connected with the lower portion 13a of this active element 13.
• Step E2) then also comprises a step E21) consisting in applying the crushing pressure to the contact portion by a relative movement of the active element 13 and the lower support 11.
• the relative movement results from the action of an electrical bonding device on at least one element taken from the group comprising the active element 13 and the lower support 11, so that all or part of the metal particles 16a of the first element electrically insulator 16, located in the contact portion, are in their second state of directional electrical conductivity thus ensuring the electrical connection between the lower portion 13a of the active element 13 and the lower conductive element 12.
• An advantage of this method is that the contact is formed only under the active element 13. This prevents parasitic welds from coming into contact with the side walls of the active elements 13 and creating short circuits.
• An advantage of this manufacturing process is that its implementation can be carried out with techniques that do not require high temperature and pressure. These techniques are also suitable for applications on large surfaces, which is advantageous for producing light display devices or imaging devices of large dimensions, for example of a dimension greater than that of a commercially available silicon disc. .

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• 2020
  • 2020-06-03 FR FR2005799A patent/FR3111236A1/fr active Pending
• 2021
  • 2021-05-31 KR KR1020227046356A patent/KR20230021028A/ko unknown
  • 2021-05-31 EP EP21734416.7A patent/EP4162527A1/de active Pending
  • 2021-05-31 CN CN202180057350.XA patent/CN116114076A/zh active Pending
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  • 2021-05-31 JP JP2022574200A patent/JP2023527903A/ja active Pending
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