EP4081671A4 - Vorrichtung zur abscheidung dielektrischer optischer dünnschichten mithilfe von sputtering-plasmaquellen und quellen von energie-ionen - Google Patents

Vorrichtung zur abscheidung dielektrischer optischer dünnschichten mithilfe von sputtering-plasmaquellen und quellen von energie-ionen Download PDF

Info

Publication number
EP4081671A4
EP4081671A4 EP20964203.2A EP20964203A EP4081671A4 EP 4081671 A4 EP4081671 A4 EP 4081671A4 EP 20964203 A EP20964203 A EP 20964203A EP 4081671 A4 EP4081671 A4 EP 4081671A4
Authority
EP
European Patent Office
Prior art keywords
sources
deposition
help
thin films
optical thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20964203.2A
Other languages
English (en)
French (fr)
Other versions
EP4081671A1 (de
Inventor
Zdenek HUBICKA
Vítezslav STRANÁK
Martin CADA
JiRí OLEJNÍCEK
Miroslav Hrabovský
Petr Schovánek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Palacky University Olomouc
Original Assignee
Palacky University Olomouc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palacky University Olomouc filed Critical Palacky University Olomouc
Publication of EP4081671A1 publication Critical patent/EP4081671A1/de
Publication of EP4081671A4 publication Critical patent/EP4081671A4/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
EP20964203.2A 2020-12-03 2020-12-03 Vorrichtung zur abscheidung dielektrischer optischer dünnschichten mithilfe von sputtering-plasmaquellen und quellen von energie-ionen Pending EP4081671A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CZ2020/000053 WO2022117130A1 (en) 2020-12-03 2020-12-03 Device for deposition of dielectric optical thin films by the help of sputtering plasma sources and sources of energy ions

Publications (2)

Publication Number Publication Date
EP4081671A1 EP4081671A1 (de) 2022-11-02
EP4081671A4 true EP4081671A4 (de) 2023-09-27

Family

ID=81852799

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20964203.2A Pending EP4081671A4 (de) 2020-12-03 2020-12-03 Vorrichtung zur abscheidung dielektrischer optischer dünnschichten mithilfe von sputtering-plasmaquellen und quellen von energie-ionen

Country Status (2)

Country Link
EP (1) EP4081671A4 (de)
WO (1) WO2022117130A1 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ304493B6 (cs) * 2011-12-28 2014-05-28 Fyzikální ústav AV ČR, v.v.i. Způsob měření iontové distribuční funkce v nízkoteplotním plazmatu, měřicí systém pro provádění tohoto způsobu a sonda pro měřicí systém
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
CZ29907U1 (cs) * 2016-07-27 2016-10-25 Univerzita PalackĂ©ho Zařízení k vytváření tenkých depozičních vrstev pomocí nízkotlakého plazmatu
CZ33034U1 (cs) * 2019-05-09 2019-07-30 Univerzita PalackĂ©ho v Olomouci Zařízení pro měření hmotnosti iontů v nízkoteplotním plazmatu

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6238537B1 (en) 1998-08-06 2001-05-29 Kaufman & Robinson, Inc. Ion assisted deposition source
US6692850B2 (en) 2001-03-07 2004-02-17 Axsun Technologies, Inc. Controlled stress optical coatings for membranes
US7465681B2 (en) 2006-08-25 2008-12-16 Corning Incorporated Method for producing smooth, dense optical films
WO2008136174A1 (ja) * 2007-04-13 2008-11-13 Shinmaywa Industries, Ltd. 成膜装置
WO2009044473A1 (ja) * 2007-10-04 2009-04-09 Canon Anelva Corporation 高周波スパッタリング装置
CA2867451C (en) * 2013-10-28 2021-06-29 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
CZ306799B6 (cs) 2016-04-18 2017-07-12 Fyzikální ústav AV ČR, v.v.i. Způsob měření depozičního nízkotlakého plazmatu s využitím vlnové rezonance elektronové cyklotronové vlny a zařízení k provádění tohoto způsobu
CZ30018U1 (cs) 2016-09-27 2016-11-15 Fyzikální ústav AV ČR, v.v.i. Zařízení k řízení depozice tenkých vrstev ve vakuovém vícetryskovém plazmovém systému
CZ306980B6 (cs) 2016-09-27 2017-10-25 Fyzikální ústav AV ČR, v.v.i. Způsob řízení rychlosti depozice tenkých vrstev ve vakuovém vícetryskovém plazmovém systému a zařízení k provádění tohoto způsobu
CZ307505B6 (cs) 2017-10-04 2018-10-24 Univerzita PalackĂ©ho v Olomouci Způsob měření impedance deponované vrstvy ve výbojovém plazmatu a zařízení k provádění tohoto způsobu

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ304493B6 (cs) * 2011-12-28 2014-05-28 Fyzikální ústav AV ČR, v.v.i. Způsob měření iontové distribuční funkce v nízkoteplotním plazmatu, měřicí systém pro provádění tohoto způsobu a sonda pro měřicí systém
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
CZ29907U1 (cs) * 2016-07-27 2016-10-25 Univerzita PalackĂ©ho Zařízení k vytváření tenkých depozičních vrstev pomocí nízkotlakého plazmatu
CZ33034U1 (cs) * 2019-05-09 2019-07-30 Univerzita PalackĂ©ho v Olomouci Zařízení pro měření hmotnosti iontů v nízkoteplotním plazmatu

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HAJIHOSEINI HAMIDREZA ET AL: "The Effect of Magnetic Field Strength and Geometry on the Deposition Rate and Ionized Flux Fraction in the HiPIMS Discharge", PLASMA, vol. 2, no. 2, 13 May 2019 (2019-05-13), pages 201 - 221, XP093075106, DOI: 10.3390/plasma2020015 *
See also references of WO2022117130A1 *
STRANAK VITEZSLAV ET AL: "Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 115, no. 15, 21 April 2014 (2014-04-21), XP012184667, ISSN: 0021-8979, [retrieved on 19010101], DOI: 10.1063/1.4871635 *

Also Published As

Publication number Publication date
EP4081671A1 (de) 2022-11-02
WO2022117130A1 (en) 2022-06-09

Similar Documents

Publication Publication Date Title
EP4281215A4 (de) Einkristalline kathodenmaterialien mit mikrowellenplasmabearbeitung
EP3991197A4 (de) Hochgeschwindigkeitssynchronisierung von plasmaquellen-/vorspannungsleistungsabgabe
EP3228161A4 (de) Plasmaquelle mit einer makropartikelreduktionsbeschichtung und verfahren zur verwendung einer plasmaquelle mit einer makropartikelreduktionsbeschichtung zur abscheidung von dünnschichten und modifizierung von oberflächen
WO2010115128A3 (en) High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process
MX2012010842A (es) Deposicion auxliada por haz ionico de recubrimientos para lentes oftalmicas.
WO2012169747A3 (ko) 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
WO2010144761A3 (en) Ionized physical vapor deposition for microstructure controlled thin film deposition
WO2009117229A3 (en) Coaxial microwave assisted deposition and etch systems
EP4059064A4 (de) Physikalische dampfabscheidung von piezoelektrischen filmen
WO2014008484A3 (en) Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates
EP3969633A4 (de) Verfahren zur dünnschichtabscheidung in gräben
EP3971319A4 (de) Bedampfungsvorrichtung
EP4305469A4 (de) Durch physikalische dampfabscheidung abgeschiedene filme einer optischen titanoxidvorrichtung
EP4230763A4 (de) Rf-sputtervorrichtung zur steuerung der atomschicht einer dünnschicht
PH12013502181A1 (en) High power impulse magnetron sputtering method providing enhanced ionization of the sputtered particles and apparatus for its implementation
CA3285290A1 (en) Atmospheric plasma filter
Günther et al. High rate low pressure plasma-enhanced chemical vapor deposition for barrier and optical coatings
EP3520131A4 (de) Verfahren zur steuerung der abscheidungsrate von dünnschichten in einem plasmasystem mit mehreren düsen und vorrichtung zur durchführung des verfahrens
WO2012109523A3 (en) Deposition of thin films on energy sensitive surfaces
JP2007533856A5 (de)
TW201612344A (en) Sputtering device
EP4292122A4 (de) Abscheidung von dielektrischen schichten auf siliziumbasis
AU2022902159A0 (en) Plasma Coating with Particles
AU2019903902A0 (en) Plasma ion processing of substrates
AU2016232864A1 (en) Anode shield

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20220727

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: C23C0014540000

Ipc: H01J0037320000

A4 Supplementary search report drawn up and despatched

Effective date: 20230829

RIC1 Information provided on ipc code assigned before grant

Ipc: C23C 14/54 20060101ALI20230823BHEP

Ipc: H01J 37/32 20060101AFI20230823BHEP

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)