EP4018492A1 - Procédé de mise en contact électroconductrice d'un composant optoélectronique comportant au moins une couche de protection et composant optoélectronique muni d'un telle mise en contact - Google Patents

Procédé de mise en contact électroconductrice d'un composant optoélectronique comportant au moins une couche de protection et composant optoélectronique muni d'un telle mise en contact

Info

Publication number
EP4018492A1
EP4018492A1 EP20780556.5A EP20780556A EP4018492A1 EP 4018492 A1 EP4018492 A1 EP 4018492A1 EP 20780556 A EP20780556 A EP 20780556A EP 4018492 A1 EP4018492 A1 EP 4018492A1
Authority
EP
European Patent Office
Prior art keywords
electrically conductive
optoelectronic component
protective layer
busbar
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20780556.5A
Other languages
German (de)
English (en)
Inventor
Michael Eritt
Christian Kirchhof
Susanne Müller
Ingrid PANICKE
Christian WISINGER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heliatek GmbH
Original Assignee
Heliatek GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliatek GmbH filed Critical Heliatek GmbH
Publication of EP4018492A1 publication Critical patent/EP4018492A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to a method for electrically conductive contacting of an optoelectronic component having at least one protective layer, as well as an optoelectronic component with such contacting.
  • Optoelectronics is made up of the fields of optics and semiconductor electronics. In particular, it includes systems and methods that enable the conversion of electronically generated energies into light emission or convert light emissions into energy.
  • Optoelectronic components in particular organic photovoltaic elements (OPVs) and organic light emitting diodes (OLED), generate electrical energy or convert electrical energy into light emissions, which have to be led out of or into the photovoltaic element for further use.
  • So-called busbars also called busbars, are required for this, which must meet the requirements of a flexible photovoltaic element. Busbars represent a point in an optoelectronic component at which the converted energy is bundled and passed on in the form of electrical currents.
  • busbars In the field of photovoltaic elements, busbars are known which are applied to the front or the rear of the photovoltaic elements. The dimensions of the cross section of a busbar depend on the current to be transmitted.
  • photovoltaic elements are provided with a protective layer or encapsulated to protect them from external influences, in particular to protect them mechanically and against environmental influences, for example moisture or diffusion of oxygen.
  • the busbars are arranged under the protective layer. To generate electrical energy from photovoltaic elements through the protective layer lead out, the busbars lying within the protective layer have to be electrically conductively contacted through the protective layer.
  • WO2009 / 13468A1 discloses a contacting method for optoelectronic components, the contacting being carried out by means of drilling or milling. In this case, after a complete lamination of the optoelectronic component, a specific area of the lamination layer is completely pierced or removed, and the exposed contact area is contacted by means of a connection element that can be tapped from the outside.
  • DE102007052972A1 discloses a method for connecting thin metal layers on polymeric carriers, for example solar cells, using a laser beam to open a polymer layer and then riveting the thin metal layers to connect the metal layers.
  • a laser with different energies and time control of the applied laser energy is used to make the opening in the polymer carrier film and to rivet the thin metal layers.
  • JP2015154049A discloses a flexible thin-film solar cell with a protective layer on the front side and a protective layer on the rear side of the solar cell, with a connection element and a connection connection which is connected to the connection element.
  • the connection connection is connected to a connection terminal, which is arranged on a side surface of the solar cell, in order to draw the electrical current, the connection terminal having a smaller thickness compared to the layer thickness of the solar cell.
  • US20110308562A1 discloses a junction box for photovoltaic elements with a protective layer, the junction box Has contact points which are designed to pierce a protective layer and thereby form an electrically conductive contact with the photovoltaic element having the protective layer.
  • a disadvantage of the prior art is that known methods for electrically conductive contacting of optoelectronic components with at least one protective layer impair the function of the protective layer and / or at least partially damage the underlying elements. Furthermore, the known methods are in particular not suitable for a roll-to-roll process for the production of photovoltaic elements.
  • the invention is therefore based on the object of providing a method for electrically conductive contacting of an optoelectronic component having at least one protective layer, the disadvantages mentioned not occurring, and in particular simple and reliable electrical contacting of an optoelectronic component with at least one protective layer, in particular in one Roll-to-roll method is provided, wherein in particular the function of the at least one protective layer and / or elements arranged underneath is not impaired, in particular these are not damaged.
  • the object is achieved in particular by providing a method for electrically conductive contacting of an optoelectronic component having at least one protective layer, in particular a flexible optoelectronic component.
  • the method comprises the following method steps: a) providing the one having the at least one protective layer Optoelectronic component, the optoelectronic component having at least one busbar which is arranged under the at least one protective layer, b) forming at least one opening by means of laser ablation with at least one laser beam in the at least one protective layer, the wavelength range of the laser being 8 pm to 12 pm , wherein at least one busbar arranged under the at least one protective layer is partially exposed so that the at least one busbar is not damaged, c) introducing a low-melting solder into the at least one opening of the at least one protective layer, and aligning and fixing a flexible electrically conductive element on a side of the at least one opening opposite the at least one busbar, and d) forming at least one electrically conductive connecting element in the at
  • the electrically conductive element is coated on the outside at least in regions with an insulating layer.
  • the at least one opening is formed in the protective layer by means of laser ablation in such a way that electrically conductive contact between the busbar and the electrically conductive element is possible.
  • parameters preferably an energy density, a pulse duration, a pulse shape, a pulse frequency and / or a wavelength of the at least one laser beam, depending on the material and the Layer thickness of the at least one protective layer adapted.
  • a continuous laser is used.
  • a pulsed laser is used.
  • the pulse duration of the laser in step b) is less than 60 ps, preferably less than 40 ps, preferably less than 20 ps, preferably less than 10 ps, preferably less than 8 ps, preferably less than 6 ps, or preferably less than 4 ps.
  • the wavelength range of the laser in step b) is 8 pm to 12 pm, preferably 9 pm to 12 pm, preferably 10 pm to 12 pm, preferably 11 pm to 12 pm, preferably 8 pm to 11 pm, preferably 8 pm to 10 pm, preferably 8 pm to 9 pm, preferably 9 pm to 11 pm, preferably 9 pm to 10 pm, or preferably 10 pm to 11 pm.
  • parameters are adapted depending on the material and the dimensions of the connecting element to be formed, so that the inductive soldering causes the formation of the connecting element for electrically conductive contacting of the at least one busbar and the electrically Conductive element guaranteed, and the at least one busbar and the layer system is not damaged.
  • evaporated material is extracted.
  • an energy density of the at least one laser beam during the laser ablation in step b) is adapted during the ablation as a function of an ablation depth of the at least one protective layer.
  • the cycle time of the laser ablation in step b) is less than 4s, preferably less than 2s, and / or the cycle time of the inductive soldering in step d) is less than 10s, preferably less than 4s.
  • the at least one opening in step b) is introduced into the at least one protective layer on a side of the optoelectronic component that is intended to be facing away from the sun, preferably a solar cell.
  • a busbar a so-called busbar, is understood to mean in particular an arrangement that is electrically conductively connected for electrical contact as a central distributor of electrical energy to incoming and outgoing lines, preferably with at least one electrode and / or at least one counter electrode.
  • the busbar is designed in particular in a planar manner as a band, strip, plate or as a metal layer.
  • the at least one busbar has a layer thickness of 10 ⁇ m to 500 ⁇ m, preferably 100 ⁇ m to 500 ⁇ m, preferably 10 ⁇ m to 200 ⁇ m, preferably 10 ⁇ m to 100 ⁇ m, preferably 10 ⁇ m to 50 ⁇ m , or preferably from 20 pm to 40 pm.
  • the at least one busbar has a low degree of absorption for heat and / or a high reflection of the wavelength of the at least one laser beam, so that the at least one busbar is only slightly heated during the laser ablation in step b).
  • An optoelectronic component is understood to mean, in particular, a photovoltaic element.
  • a photovoltaic element is understood to mean, in particular, a photovoltaic cell, in particular a solar cell.
  • the photovoltaic element is preferably composed of several photovoltaic cells which can be connected in series or in parallel. The plurality of photovoltaic cells can be arranged and / or connected in different ways in the optoelectronic component.
  • the optoelectronic component in particular the photovoltaic element, comprises at least one electrode, a counter electrode, and a layer system with at least one photoactive layer, the layer system being arranged between the two electrodes, and the at least one busbar at least partially on the Electrode and / or the counter electrode is electrically conductively contacted.
  • the electrode, the layer system and the counter-electrode are laser-structured so that the electrode and / or the counter-electrode can each be electrically conductively contacted from a side of the optoelectronic component that is intended to be turned away from the sun or from a side of the optoelectronic component intended to be facing the sun.
  • the electrically conductive contacting of different potentials on a plane of the optoelectronic component in particular a plane parallel to the extension of the layer system, via at least one busbar is possible.
  • two busbars are arranged on the electrode and / or the counter electrode, a first busbar being assigned to a first potential and a second busbar to a second potential.
  • the flexible optoelectronic component is a flexible photovoltaic element, in particular a flexible organic photovoltaic element.
  • a flexible optoelectronic component is understood to mean, in particular, an optoelectronic component that can be bent and / or stretched in a specific area.
  • the photovoltaic element has a cell with at least one photoactive layer, in particular a CIS, CIGS, GaAs, or Si cell, a perovskite cell or an organic photovoltaic element (OPV), a so-called organic solar cell .
  • An organic photovoltaic element is understood to mean, in particular, a photovoltaic element with at least one organic photoactive layer, in particular a polymeric organic photovoltaic element or an organic photovoltaic element based on small molecules.
  • the photovoltaic element is particularly preferably a flexible organic photovoltaic element based on small molecules.
  • the photoactive layer of the layer system comprises small molecules which can be evaporated in a vacuum. In a preferred embodiment, at least the photoactive layer of the layer system is vapor-deposited in a vacuum.
  • Small molecules include, in particular, non-polymeric organic molecules with monodisperse molar masses between 100 and 2000 g / mol understood, which are present under normal pressure (air pressure of the atmosphere surrounding us) and at room temperature in the solid phase.
  • the small molecules are photoactive, whereby photoactive is understood to mean that the molecules change their charge state and / or their polarization state when light is introduced.
  • a protective layer is understood to mean, in particular, a barrier layer to prevent the permeability of external influences, in particular atmospheric oxygen and / or moisture, a protective layer to increase mechanical resistance, in particular scratch resistance, and / or a filter layer, preferably a layer with a UV filter .
  • An element arranged under a protective layer is understood to mean in particular an element that is arranged on the protective layer in such a way that it is protected from external influences by the protective layer.
  • the optoelectronic component has at least one protective layer on the front side and at least one protective layer on the rear side of the optoelectronic component.
  • at least one of the at least one protective layer on the front side is glued to one of the at least one protective layer on the rear side.
  • a front side of an optoelectronic component is understood to mean in particular a side of the optoelectronic component that is intended to be facing the sun. Accordingly, a rear side of an optoelectronic component is understood to mean in particular a side of the optoelectronic component that is intended to be facing away from the sun.
  • the optoelectronic component has an encapsulation comprising at least one protective layer, which encloses the optoelectronic component in a diffusion-tight manner, that is to say seals it.
  • the encapsulation is a polymer encapsulation.
  • the optoelectronic component is electrically conductively contacted with the electrically conductive element from the side facing away from the sun as intended.
  • the electrically conductive element is arranged directly on the at least one protective layer. In an alternatively preferred embodiment, the electrically conductive element is arranged on an electrically conductive connecting layer applied to the at least one protective layer.
  • the electrically conductive element is designed as a cross connector.
  • a functional layer preferably a colored layer, a filter layer and / or an adhesive layer, is at least partially arranged between the at least one protective layer and the electrically conductive element.
  • the functional layer is applied to the at least one protective layer by means of a roll-to-roll method.
  • the flexible electrically conductive element is fixed in step c) and / or d) on a side of the at least one opening opposite the at least one busbar.
  • the flexible is electrical
  • the conductive element is fixed in step c) on a side of the at least one opening opposite the at least one busbar by means of a fixing tape, preferably an adhesive tape.
  • the electrically conductive element is fixed in step c) and / or d) on a side of the at least one opening opposite the at least one busbar by the application of pressure.
  • a connecting material in particular an adhesive, is attached between the at least one busbar and the at least one protective layer, the at least one protective layer and the at least one busbar preferably being connected in a form-fitting manner.
  • the connecting material is at least largely transparent to visible light.
  • the optoelectronic component has two protective layers arranged one above the other, preferably three protective layers arranged one above the other, or preferably four protective layers arranged one above the other.
  • at least one connecting material in particular an adhesive, is arranged between the protective layers, it being possible for the type of the at least one connecting material to differ between the individual protective layers.
  • the at least one protective layer is formed from a film or a coating, preferably from a lacquer or a polymer.
  • the at least one protective layer is composed of at least one front side film and at least one rear side film of the optoelectronic component educated. In a preferred embodiment, the at least one protective layer is designed as an encapsulation.
  • the at least one busbar is covered by the at least one protective layer, so that the at least one busbar does not extend beyond the protective layer, and thus cannot be electrically contacted outside the at least one protective layer via cables.
  • a uniform heat input is understood to mean, in particular, a soldering point that is heated uniformly from all sides during inductive soldering, in particular in order to achieve as uniform a temperature distribution as possible in the soldering point.
  • a low-melting solder is understood in particular to be a solder which melts below a certain temperature at which at least the electrode and the layer system of the optoelectronic component are not damaged; the low-melting solder is preferably soldered without flux.
  • the method according to the invention for electrically conductive contacting of an optoelectronic component having at least one protective layer has advantages compared to the prior art.
  • a simple and reliable electrically conductive contacting of the optoelectronic component is advantageously ensured. Damage to the layer system and / or the electrodes is advantageously avoided.
  • the heat input is advantageously limited in time and also thermally, as a result of which damage to the adjacent layer system is avoided.
  • the busbars, in particular the busbars designed as thin metal layers, and the between the electrode and / or the counter electrode and the at least one busbar arranged electrically conductive connecting material is not damaged.
  • the diffusion tightness of the at least one protective layer is advantageously not reduced.
  • the method is advantageously particularly inexpensive.
  • the method can advantageously be carried out in a roll-to-roll method.
  • mechanical stresses between the at least one busbar and the electrically conductive element and thereby cracking are avoided by a contactless and uniform introduction of heat.
  • no cable is required for electrically conductive contact between the at least one busbar and the junction box.
  • a plurality of busbars, in particular a plurality of connecting elements can advantageously be connected via an electrically conductive contact.
  • only one junction box is required for electrically conductive contacting of the optoelectronic component.
  • a precise repeatability and a high degree of automation with short cycle times are advantageously possible.
  • a junction box can advantageously be easily integrated in different areas of the optoelectronic component.
  • the number of potential weak points in the integration of the junction box is advantageously reduced.
  • the photovoltaic element can advantageously be fastened to a surface in a form-fitting manner with such a contact.
  • the at least one electrically conductive element is electrically conductively connected to a junction box, the junction box being arranged on the optoelectronic component, preferably in an area remote from a corner of the optoelectronic component.
  • the junction box is arranged directly on the surface of the optoelectronic component. In a preferred embodiment, the junction box is arranged on an edge of the at least one protective layer and / or the encapsulation of the optoelectronic component. In a preferred embodiment, the junction box is glued to the surface of the optoelectronic component.
  • a junction box is understood to mean, in particular, an element for connecting the optoelectronic component to an electrical circuit.
  • the junction box is used in particular for the electrically conductive connection of at least one busbar arranged under the at least one protective layer of the optoelectronic component to an electrical circuit.
  • the junction box is arranged on a region of the optoelectronic component without a layer system, in particular without a photoactive layer. This avoids degradation processes in the photoactive layer.
  • the laser medium of the at least one laser beam in step b) is CO2.
  • step c) a solder preform is introduced into the at least one opening.
  • the solder preform is formed from the low-melting solder.
  • the at least one opening has a cross-sectional area of 0.1 to 75 mm 2 , preferably 1 to 30 mm 2 , with a contact area of the connecting element with the at least one busbar and / or with the electrical conductive element is smaller than the surface of the busbar facing the connecting element.
  • the at least one opening has a cross-sectional area of 0.1 to 75 mm 2 , preferably 0.1 to 30 mm 2 , preferably 1 to 75 mm 2 , preferably 1 to 30 mm 2 , preferably 1 up to 10 mm 2 , preferably from 0.1 to 10 mm 2 , preferably from 20 to 50 mm 2 , or preferably from 10 to 30 mm 2 .
  • the opening is formed in a circular shape, but in an alternatively preferred embodiment, the opening can be formed in another polygonal shape or in an elliptical shape, in particular a square, triangular, hexagonal or octagonal shape.
  • the at least one opening has a diameter of 10 ⁇ m to 5 mm, preferably 100 ⁇ m to 5 mm, 1 mm to 5 mm, preferably 1 mm to 2 mm, preferably 10 ⁇ m to 1 mm, preferably from 100 pm to 1 mm, or preferably from 10 pm to 100 pm.
  • the connecting element has a cross-sectional area 0.1 to 75 mm 2 , preferably 0.1 to 30 mm 2 , preferably 1 to 75 mm 2 , preferably 1 to 30 mm 2 , preferably 1 to 10 mm 2 , preferably from 0.1 to 10 mm 2 , preferably from 20 to 50 mm 2 , or preferably from 10 to 30 mm 2 .
  • the connecting element is formed in a circular shape, but in an alternatively preferred embodiment the opening can be formed in another polygonal shape or in an elliptical shape, in particular a square, triangular, hexagonal or octagonal shape.
  • the connecting element has a diameter of 10 ⁇ m to 5 mm, preferably 100 ⁇ m to 5 mm, preferably 1 mm to 5 mm, preferably 1 mm to 2 mm, preferably from 10 pm to 1 mm, preferably from 100 pm to 1 mm, or preferably from 10 pm to 100 pm.
  • Cross-sectional area of the at least one opening at least largely the cross-sectional area of the connecting element.
  • the low-melting solder for forming the connecting element is selected from the group consisting of bismuth, copper, silver and tin, and an alloy of at least one of these elements.
  • the low-melting solder for forming the connecting element is formed from tin and bismuth or an alloy thereof, preferably from tin, bismuth, copper and silver.
  • the low-melting solder has impurities on further elements in an amount of a maximum of 5% by weight, preferably of a maximum of 2% by weight.
  • the at least one protective layer is formed from a film, in particular a light-permeable film.
  • the at least one protective layer is made of ethylene tetrafluoroethylene (ETFE), ethylene vinyl acetate (EVA), polycarbonate (PC), polyethylene (PE), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polypropylene (PP), or thermoplastic polyurethane (TPU).
  • ETFE ethylene tetrafluoroethylene
  • EVA ethylene vinyl acetate
  • PC polycarbonate
  • PE polyethylene
  • PEN polyethylene naphthalate
  • PET polyethylene terephthalate
  • PMMA polymethyl methacrylate
  • PP polypropylene
  • TPU thermoplastic polyurethane
  • At least one connecting material is arranged between the at least one protective layer and the at least one busbar, preferably an adhesive, the at least one opening in step b) in the at least one protective layer and in the at least one Protective layer arranged connecting material is formed.
  • the connecting material is positively connected to the at least one protective layer and / or the at least one busbar.
  • the connecting material is an at least largely translucent adhesive.
  • the electrically conductive contacting of the at least one busbar with the electrically conductive element and the electrically conductive element with the junction box is carried out without a cable.
  • the electrically conductive contact between the electrically conductive element and the junction box is carried out via at least one cable.
  • the at least one protective layer has a layer thickness of 10 gm to 500 gm, preferably 100 gm to 500 gm, preferably 10 gm to 100 gm, preferably 10 gm to 50 gm, or preferably 20 gm to 40 gm gm.
  • the electrically conductive element is designed as a plate or a strip, the plate or the strip preferably having a layer thickness of 10 gm to 100 gm, preferably 10 gm to 60 gm, or as a Wire is formed, the wire preferably having a cross-sectional area of 0.1 mm 2 to 2 mm 2 , preferably from 0.5 mm 2 to 1 mm 2 .
  • the electrically conductive element has a layer thickness of 10 gm to 500 gm, 10 gm to 200 gm, preferably 100 gm to 200 gm, preferably 10 gm to 100 gm, preferably 10 gm to 60 gm, or preferably from 20 gm to 40 gm.
  • the electrically conductive element has a cross-sectional area of 0.1 mm 2 to 2 mm 2 , preferably 0.1 mm 2 to 1.5 mm 2 , preferably 0.2 mm 2 to 1.5 mm 2 , preferably from 0.5 mm 2 to 1.5 mm 2 , preferably from 0.2 mm 2 to 1 mm 2 , or preferably from 0.5 mm 2 to 1 mm 2 .
  • the at least one busbar is designed as a metal layer made of at least one metal or an alloy thereof, preferably made of copper and tin, the at least one busbar and the electrically conductive element preferably being made of the same material .
  • the at least one busbar is materially connected to the connecting element and / or the electrically conductive element is connected to the connecting element.
  • a sealing material is applied in and / or on the opening having the connecting element, so that the at least one opening is sealed with the connecting element.
  • the at least one electrically conductive element is electrically conductively connected to a junction box, the junction box being arranged on the optoelectronic component.
  • At least one connection opening is included in step e) by means of laser ablation at least one laser beam in the at least one protective layer, preferably from the side of the optoelectronic component having the at least one protective layer, which is directed towards the sun, with the electrically conductive element obtained in step d), the wavelength range of the laser being 8 pm to 12 pm, the behind the at least one protective layer on the intended side facing away from the sun is partially exposed electrically conductive element, so that the electrically conductive element is not damaged.
  • the at least one connection opening in step e) is introduced into an insulating layer of the electrically conductive element on a side of the optoelectronic component that is intended to be remote from the sun, preferably a solar cell.
  • step e) The implementation of the laser ablation in step e) with the associated parameters essentially corresponds to that of step b).
  • parameters preferably an energy density, a pulse duration, a pulse shape, a pulse frequency and / or a wavelength of the at least one laser beam, depending on the material and the layer thickness, are used to form the at least one connection opening by means of laser ablation in step e) adapted to the at least one protective layer.
  • the laser medium of the at least one laser beam in step e) is CO2.
  • the at least one connection opening has a cross-sectional area of 0.1 to 75 mm 2 , preferably 1 to 40 mm 2 , or preferably 1 to 30 mm 2 .
  • a solder is introduced into the at least one connection opening of the at least one protective layer formed in step e) in step f), and the connection box is aligned and fixed on a side of the at least one connection opening opposite the electrically conductive element and in a step g) an electrically conductive connection element is formed in the at least one connection opening by means of inductive soldering, so that the electrically conductive element and the connection box are electrically conductively contacted via the at least one connection element.
  • the junction box is fixed on a side of the at least one connection opening opposite the electrically conductive element in step f) and / or step g).
  • the at least one connection opening in step e) is introduced into the at least one protective layer on a side of the optoelectronic component that is intended to face the sun, preferably a solar cell.
  • connection element by means of inductive soldering in step g), parameters are adapted as a function of the material and the dimensions of the connection element to be formed.
  • a solder preform is introduced into the at least one opening in step f).
  • the junction box has the solder preform.
  • the connection box, in particular connection lines of the connection box is materially connected to the connection element in step g).
  • the connection element has a cross-sectional area of 0.1 to 75 mm 2 , preferably 1 to 40 mm 2 , or preferably 1 to 30 mm 2 .
  • solder for forming the connection element is selected from the group consisting of bismuth, copper, silver and tin, and an alloy of at least one of these elements.
  • the electrically conductive element and the junction box are contacted in an electrically conductive manner directly via the connection element, in particular no additional cable being arranged between the electrically conductive element and the junction box for electrically conductive contacting.
  • a sealing material is applied and / or entered in and / or on the connection opening having the connection element, so that the at least one connection opening is sealed with the connection element, this is preferred Sealing material a silicone and / or a resin.
  • the junction box is connected in an electrically conductive manner to the electrically conductive element by means of a plug connection.
  • the junction box can be installed reversibly on the optoelectronic component particularly easily, in particular at the location where the optoelectronic component is installed.
  • the junction box has a diode.
  • Organic photovoltaic elements in particular organic solar cells, consist of a sequence of thin layers with at least one photoactive layer, which are preferably evaporated in a vacuum or processed from a solution.
  • the electrical connection can be made by metal layers, transparent conductive oxides and / or transparent conductive polymers.
  • the vacuum vapor deposition of the organic layers is particularly advantageous in the production of multilayer solar cells, in particular tandem or triple cells.
  • the photovoltaic element in particular the organic photovoltaic element, is formed from at least one cell.
  • the cell is a single, tandem or multiple cell. Tandem and multiple cells consist of at least two cells which are arranged one above the other between the electrodes, each cell having at least one photoactive layer.
  • each cell preferably has its own electrode and counter electrode.
  • the series connection is made by electrically connecting the electrode of one cell to the counter electrode of the next cell.
  • the optoelectronic component is additionally provided with a barrier layer and / or additionally encapsulated with a barrier layer in order to minimize degradation due to external influences.
  • the method for electrically conductive contacting of an optoelectronic component is used in a roll-to-roll method.
  • the object of the present invention is also achieved by providing an optoelectronic component, in particular a flexible optoelectronic component, with at least one protective layer and with at least one busbar, which is arranged under the at least one protective layer of the optoelectronic component, preferably produced by a method according to the invention is, in particular according to one of the embodiments described above.
  • the optoelectronic component has at least one electrically conductive contact, the at least one electrically conductive contact making electrically conductive contact with the at least one busbar by means of an electrically conductive connecting element with a flexible, electrically conductive element, and the optoelectronic component preferably being connected to a junction box.
  • this results in particular in the advantages that have already been described in connection with the method for electrically conductive contacting of an optoelectronic component having at least one protective layer.
  • the electrically conductive element is arranged directly on the at least one protective layer. In an alternatively preferred embodiment, the electrically conductive element is arranged on a connection layer applied to the at least one protective layer.
  • the at least one busbar is arranged on an electrode or a counter electrode. In a preferred embodiment, the at least one busbar is arranged on a side of the optoelectronic component, in particular a photovoltaic element, which is intended to be facing away from the sun. In a preferred embodiment, the at least one busbar is arranged at least largely over the width or length of the layer system, which leads the two poles, including the minus and plus poles of the photovoltaic element, to a connection point.
  • the at least one busbar is applied directly to the electrode or the counter electrode.
  • an electrically conductive layer is arranged between the at least one busbar and the electrode or the counter electrode.
  • At least one connecting material is arranged between the at least one protective layer and the at least one busbar, preferably an adhesive, the at least one opening being formed in the at least one protective layer and in the connecting material arranged on the at least one protective layer is.
  • the at least one connecting material is arranged over the entire extent of the at least one protective layer.
  • the flexible optoelectronic component is a flexible solar cell, with an electrode, a counter electrode, and a layer system with at least one photoactive layer, the layer system being arranged between the two electrodes, and the at least one busbar is at least partially electrically conductively contacted on the electrode and / or the counter-electrode.
  • a first busbar makes electrically conductive contact with at least one electrode and a second busbar makes electrically conductive contact with at least one counter electrode, the first Busbar leads to a first electrically conductive element and the second busbar leads to a second electrically conductive element, the two electrically conductive elements preferably being electrically conductively connected to the junction box.
  • the junction box is arranged in a region remote from an edge of the optoelectronic component. In an alternatively preferred embodiment, the junction box is arranged on an edge of the at least one protective layer and / or the encapsulation of the optoelectronic component.
  • the junction box is arranged on the front side of the solar cell, in particular in an area on an edge of the solar cell. In an alternative embodiment of the invention, the junction box is arranged on the front side of the solar cell, in particular in an area remote from the layer system of the optoelectronic component.
  • the junction box is arranged on the side of the solar cell that is intended to be facing away from the sun. In an alternative preferred embodiment, the junction box is arranged on the side of the solar cell that is intended to be turned away from the sun.
  • the electrically conductive element connects at least two busbars in an electrically conductive manner, preferably busbars from different cells, and leads them to the junction box.
  • the junction box is arranged on a side of the optoelectronic component, preferably a solar cell, facing the sun, and the electrically conductive element is arranged on one
  • the side of the optoelectronic component, preferably a solar cell, facing away from the sun is arranged.
  • FIG. 1 shows a schematic illustration of an exemplary embodiment of a method for electrically conductive contacting of an optoelectronic component having at least one protective layer in a flow diagram
  • FIG. 2 shows a schematic illustration of an exemplary embodiment of an optoelectronic component having a protective layer with an electrically conductive contact in a side view
  • FIG. 3 shows schematic representations of two exemplary embodiments of an optoelectronic component having a protective layer with an electrically conductive contact in a top view.
  • FIG. 1 shows a schematic illustration of an exemplary embodiment of a method for electrically conductive contacting of an optoelectronic component 10 having at least one protective layer 7 in a flow diagram.
  • the optoelectronic component 10 in particular a photovoltaic element, comprises at least one electrode 6, a counter electrode 5, and a layer system 4 with at least one photoactive layer, the layer system 4 being arranged between the two electrodes 5, 6 and the at least one busbar 1 is at least partially contacted in an electrically conductive manner on the electrode 6 and / or the counter-electrode 5.
  • the method for electrically conductive contacting of the optoelectronic component 10 having at least one protective layer 7, in particular a flexible optoelectronic component 10 comprises the following method steps: a) providing the optoelectronic component 10 having the at least one protective layer 7, the optoelectronic component 10 having at least one busbar 1 which is arranged under the at least one protective layer 7, b) forming at least an opening 8 by means of laser ablation with at least one laser beam in the at least one protective layer 7, the wavelength range of the laser being 8 pm to 12 pm, with at least one busbar 1 arranged under the at least one protective layer 7 being partially exposed so that the at least one busbar 1 is not damaged, c) introducing a low-melting solder into the at least one opening 8 of the at least one protective layer 7, and aligning and fixing a flexible electrically conductive element 2 on one of the at least one busbar 1 opposite Side of the at least one opening 8, and d) forming an electrically conductive connecting element 11 in the at least one opening 8 by means
  • the busbars in particular the busbars designed as thin metal layers, and the electrically conductive connecting material arranged between the electrode and / or the counter-electrode and the at least one busbar are advantageously not damaged.
  • the heat input is advantageously limited in time and also thermally, as a result of which damage to the adjacent layer system is avoided.
  • several connecting elements in particular several busbars, can be connected via an electrically conductive contact get connected. The method is advantageously in one
  • the parameters of the laser ablation are set depending on the material and the layer thickness of the at least one protective layer 7 in such a way that the laser ablation of the protective layer 7 denotes Removal of the protective layer 7 to expose the busbar 1 without damaging the at least one busbar and the layer system 4 is guaranteed.
  • the parameters of the inductive soldering are set depending on the material and dimensions of the connecting element 11 to be formed in such a way that the inductive soldering ensures the formation of the connecting element 11 for electrically conductive contacting of the at least one busbar 1 and the electrically conductive element 2, and the at least a busbar 1 and the layer system 4 are not damaged.
  • the electrode 6, the counterelectrode 5 and the layer system 4 are laser-structured, so that the electrode 6 and / or the counterelectrode 5 each from a side of the optoelectronic component 10 as intended facing away from the sun or from a side of the optoelectronic component 10 as intended, facing away from the sun a busbar 1 can be contacted in an electrically conductive manner.
  • the electrically conductive contacting of different potentials on a plane of the optoelectronic component 10, in particular a plane parallel to the extent of the layer system 4, via at least one busbar 1 is possible.
  • two busbars 1 are arranged on the electrode 6 and / or the counter electrode 5.
  • the at least one electrically conductive element 2 is electrically conductively connected to a junction box 3, the junction box 3 being arranged on the optoelectronic component 10, preferably in an area remote from a corner of the optoelectronic component 10.
  • the laser medium of the at least one laser beam in step b) is CO2.
  • a solder preform is introduced into the at least one opening 8 in step c).
  • the at least one opening 8 has a cross-sectional area of 0.1 to 75 mm 2 , preferably 1 to 30 mm 2 , with a contact surface of the connecting element 11 with the at least one busbar 1 and / or with the The electrically conductive element 2 is smaller than the surface of the at least one busbar 1 facing the connecting element 11.
  • the cross-sectional area of the at least one opening corresponds to the cross-sectional area of the connecting element.
  • the low-melting solder for forming the connecting element 11 is selected from the group consisting of bismuth, copper, silver and tin, and an alloy of at least one of these elements.
  • At least one connecting material 9 is arranged between the at least one protective layer 7 and the at least one busbar 1, preferably an adhesive, the at least one opening 8 being formed in step b) in the at least one protective layer 7 and in the connecting material 9 arranged on the at least one protective layer 7.
  • the connecting material 9 shown in FIG. 2 is also formed as an alternative.
  • the electrically conductive element 2 is designed as a plate or a strip, the plate or the strip preferably having a layer thickness of 10 ⁇ m to 100 ⁇ m, preferably from 10 ⁇ m to 60 ⁇ m, or designed as a wire , the wire preferably having a cross-sectional area of 0.1 mm 2 to 2 mm 2 , preferably of 0.5 mm 2 to 1 mm 2 .
  • the at least one busbar 1 is designed as a metal layer made of at least one metal or an alloy thereof, preferably made of copper and tin, the at least one busbar 1 and the electrically conductive element 2 preferably being made of the same material .
  • the electrically conductive element 2 is coated on the outside at least in regions with an insulating layer 13.
  • step d) for the electrically conductive connection of the junction box 3 to the electrically conductive element 2 of the optoelectronic component 10 having the at least one protective layer 7, according to step d), at least one connection opening is made in step e) by means of laser ablation with at least one laser beam in the at least one protective layer 7, preferably from the side of the optoelectronic component 10 having the at least one protective layer 7, which is directed towards the sun, with the step in step d) formed electrically conductive element 2 obtained, wherein the wavelength range of the laser is 8 pm to 12 pm, whereby the electrically conductive element 2 arranged behind the at least one protective layer 7 on the side facing away from the sun is partially exposed, so that the electrically conductive 2 element is not damaged.
  • a solder is introduced into the at least one connection opening formed in step e) of the at least one protective layer 7 in step f), and the connection box 3 on a side of the at least one connection opposite the electrically conductive element 2 -Opening aligned and fixed, and in a step g) an electrically conductive connection element 12 is formed in the at least one connection opening by means of inductive soldering, so that electrically conductive contact is made between the electrically conductive element 2 and the connection box 3 via the at least one connection element 12 .
  • the method is used for electrically conductive contacting of an optoelectronic component 10 in a roll-to-roll method.
  • FIG. 2 shows a schematic illustration of an exemplary embodiment of an optoelectronic component 10 having a protective layer 7 with an electrically conductive contact in a side view. Identical and functionally identical elements are provided with the same reference numerals, so that in this respect reference is made to the preceding description.
  • the optoelectronic component 10 in particular a flexible optoelectronic component 10, has at least one protective layer 7 and at least one busbar 1, which is arranged under the at least one protective layer 7 of the optoelectronic component 10. Furthermore, the optoelectronic component 10 has at least one electrically conductive one Contacting, in particular produced according to a method according to the invention, for electrically conductive contacting of the optoelectronic component 10 having at least one protective layer 7, the at least one electrically conductive contacting the at least one busbar 1 electrically by means of an electrically conductive connecting element 11 with a flexible electrically conductive element 2 conductively contacted.
  • the at least one electrically conductive element 2 is electrically conductively connected to a junction box 3, the junction box 3 being arranged on the optoelectronic component 10.
  • the junction box 3 is arranged in a region remote from a corner of the optoelectronic component 10.
  • At least one connecting material 9, preferably an adhesive, is arranged between the at least one protective layer 7 and the at least one busbar 1.
  • the flexible optoelectronic component 10 is a flexible solar cell, and has an electrode 6, a counter electrode 5, and a layer system 4 with at least one photoactive layer, the layer system 4 being arranged between the two electrodes 5, 6 , and wherein the at least one busbar 1 is at least partially connected to the electrode 6 and / or the counter electrode 5 is electrically conductively contacted.
  • the basic structure of a solar cell is represented by the two electrodes 5, 6 and the layer system 4 arranged between them.
  • the layer system 4 can be designed in different ways, in particular have a different number of absorber materials and / or a different number of photoactive layers.
  • the production of the optoelectronic component 10, in particular a photovoltaic element with a layer system 4 can be carried out by evaporation in a vacuum, with or without carrier gas, or processing from a solution or suspension, for example during coating or printing. Individual layers can also be applied by sputtering. It is preferred to produce the layers by evaporating the small molecules in a vacuum.
  • a first busbar 1 makes electrically conductive contact with the at least one electrode 6 and a second busbar 15 contacts the at least one counterelectrode 5 in an electrically conductive manner, the first busbar 1 leading to a first electrically conductive element 2 and the second busbar 15 leads to a second electrically conductive element 16, and wherein the two electrically conductive elements 2, 16 are preferably connected to the junction box 3 in an electrically conductive manner.
  • the optoelectronic component 10 is a flexible optoelectronic component 10, in particular a flexible solar cell.
  • the flexible solar cell is in particular an organic solar cell with at least one photoactive layer based on small molecules, but the use of other flexible organic solar cells is also conceivable.
  • the junction box 3 is on a side of the intended facing the sun optoelectronic component 10, preferably a solar cell, and the electrically conductive element 2 is arranged on a side of the optoelectronic component 10, preferably a solar cell, which is intended to be remote from the sun.
  • a functional layer 14, preferably a color layer, a filter layer and / or an adhesive layer, can be arranged at least partially between the at least one protective layer 7 and the electrically conductive element 2.
  • FIG. 3 shows schematic representations of two exemplary embodiments of an optoelectronic component 10 having a protective layer 7 with an electrically conductive contact in a top view. Identical and functionally identical elements are provided with the same reference numerals, so that in this respect reference is made to the preceding description.
  • two busbars 1, 15 are arranged on an electrode 6 and / or a counter electrode 5, a first busbar 1 being assigned to a first potential and a second busbar 15 to a second potential.
  • the electrode 6, the counterelectrode 5 and the layer system 4 are laser-structured, the electrode 6 and / or the counterelectrode 5 each making electrically conductive contact with the busbars 1, 15 from a side of the optoelectronic component 10 that is intended to be turned away from the sun or from a side of the optoelectronic component 10 that is intended to be facing the sun are.
  • FIG. 3A there are two electrically conductive contacts which are produced by a method according to the invention for electrically conductive contacting of the optoelectronic component 10 having the at least one protective layer 7 in accordance with steps a) to d).
  • the busbar 1 is connected to an electrically conductive element 2 via a Connecting element 11 and the busbar 15 are electrically conductively connected to an electrically conductive element 16 via a connecting element 11.
  • the electrically conductive elements 2, 16 are coated on the outside at least in some areas with an insulating layer 13.
  • two connection openings are provided by means of laser ablation with at least one laser beam in the at least one protective layer 7, preferably from the side of the optoelectronic component 10 having the at least one protective layer that is intended to be facing the sun , formed according to step e), wherein the wavelength range of the laser is 8 pm to 12 pm.
  • the electrically conductive elements 2, 16 arranged behind the at least one protective layer 7 on the intended side facing away from the sun are thereby partially exposed, so that the electrically conductive elements 2, 16 are not damaged.
  • electrically conductive connection elements 12 are formed in the two connection openings in the two connection openings of the at least one protective layer 7, so that the electrically conductive elements 2, 16 and the connection box 3 are electrically connected via the two connection elements 12 are conductively contacted.
  • the junction box 3 is located partially behind the at least one protective layer 7 when viewed from above.
  • FIG. 3B there are two electrically conductive contacts which are produced by a method according to the invention for electrically conductive contacting of the optoelectronic component 10 having the at least one protective layer 7 in accordance with steps a) to d).
  • the busbar 1 is connected in an electrically conductive manner to an electrically conductive element 2 via a connecting element 11 and the busbar 15 is connected to an electrically conductive element 16 via a connecting element 11.
  • the electrically conductive elements 2, 16 are coated on the outside at least in some areas with an insulating layer 13.
  • the electric Conductive elements 2, 16 are designed in the form of a wire or a narrow strip, guided on the surface of the optoelectronic component 10 to a junction box 3, and connected to the junction box 3 in an electrically conductive manner.
  • the electrically conductive elements 2, 16 are coated on the outside at least in some areas with an insulating layer 13.
  • the electrically conductive elements 2, 16 are routed to the junction box 3 on the side of the optoelectronic component 10 that is intended to face away from the sun.
  • the electrically conductive elements 2, 16 are routed to the junction box 3 on the side of the optoelectronic component 10 that is intended to face away from the sun.
  • the electrically conductive elements 2, 16 are routed to the junction box 3 on the side of the optoelectronic component 10 that is intended to face away from the sun.
  • the electrically conductive elements 2, 16 are routed to the junction box 3 on the side of the optoelectronic component 10 that is intended to face away from the sun.
  • Elements 2, 16 according to steps e) to g) through an edge region of the at least one protective layer 7, in particular an area on which no layer system 4 is arranged, to the side of the optoelectronic component 10 that is intended to be facing the sun and / or there with the Junction box 3 are electrically connected.
  • the junction box 3 is located partially behind the at least one protective layer 7 when viewed from above.

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  • Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

L'invention concerne un procédé de mise en contact électroconductrice d'un composant optoélectronique (10) comportant au moins une couche de protection (7), a) le composant optoélectronique (10) qui présente ladite au moins une couche de protection (7) étant fourni, le composant optoélectronique (10) comportant au moins une barre omnibus (1) qui est agencée en-dessous de ladite au moins une couche de protection (7), b) au moins une ouverture (8) étant ménagée dans ladite au moins une couche de protection (7), par ablation par laser au moyen d'au moins un faisceau laser, la gamme de longueurs d'onde du laser se situant entre 8 et 12 pm, au moins une barre omnibus (1) agencée en-dessous de ladite au moins une couche de protection (7) étant en partie dégagée, de sorte que ladite au moins une barre omnibus (1) n'est pas endommagée, c) un métal d'apport de brasage à faible point de fusion étant introduit dans ladite au moins une ouverture (8) de ladite au moins une couche de protection (7), et un élément électroconducteur souple (2) étant orienté et fixé sur une face de ladite au moins une ouverture (8), située à l'opposé de ladite au moins une barre omnibus (1), et d) un élément de liaison (11) électroconducteur étant introduit dans ladite au moins une ouverture (8), par brasage par induction avec un apport régulier de chaleur, de sorte que l'élément électroconducteur (2) et ladite au moins une barre omnibus (1) sont mis en contact électroconducteur par l'intermédiaire dudit au moins un élément de liaison (11).
EP20780556.5A 2019-08-19 2020-08-18 Procédé de mise en contact électroconductrice d'un composant optoélectronique comportant au moins une couche de protection et composant optoélectronique muni d'un telle mise en contact Pending EP4018492A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019122213.3A DE102019122213A1 (de) 2019-08-19 2019-08-19 Verfahren zur elektrisch leitenden Kontaktierung eines mindestens eine Schutzschicht aufweisenden optoelektronischen Bauelements und optoelektronisches Bauelement mit einer solchen Kontaktierung
PCT/DE2020/100720 WO2021032250A1 (fr) 2019-08-19 2020-08-18 Procédé de mise en contact électroconductrice d'un composant optoélectronique comportant au moins une couche de protection et composant optoélectronique muni d'un telle mise en contact

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EP4018492A1 true EP4018492A1 (fr) 2022-06-29

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US (1) US20220285641A1 (fr)
EP (1) EP4018492A1 (fr)
JP (1) JP2022545438A (fr)
KR (1) KR20220047819A (fr)
CN (1) CN114467185A (fr)
DE (1) DE102019122213A1 (fr)
WO (1) WO2021032250A1 (fr)

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DE102020131743A1 (de) * 2020-11-30 2022-06-02 Heliatek Gmbh Photovoltaisches Element mit mindestens einer photovoltaischen Zelle und mit einer Rückseitenbarriere

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CH647908A5 (de) * 1979-06-05 1985-02-15 Siemens Ag Albis Verfahren und anordnung zum kontaktieren der leiterbahnen von leiterplatten mit kontaktstiften.
US4443652A (en) * 1982-11-09 1984-04-17 Energy Conversion Devices, Inc. Electrically interconnected large area photovoltaic cells and method of producing said cells
US4685608A (en) * 1985-10-29 1987-08-11 Rca Corporation Soldering apparatus
GB0714241D0 (en) 2007-07-20 2007-08-29 Univ Wageningen Light blight resistances genes and methods
DE102007052972A1 (de) * 2007-11-07 2009-05-14 Solarion Ag Verfahren und Mittel zum Verbinden dünner Metallschichten
EP2113945A1 (fr) * 2008-04-30 2009-11-04 3S Swiss Solar Systems AG Procédé de fabrication d'une mise en contact de cellules solaires
EP2449602A2 (fr) * 2009-06-29 2012-05-09 Reis Group Holding GmbH & Co. KG Procédé de dénudation d'un contact électrique
DE102010027747A1 (de) * 2010-04-14 2011-10-20 Robert Bosch Gmbh Verfahren zur Herstellung eines Photovoltaikmoduls mit rückseitenkontaktierten Halbleiterzellen und Photovoltaikmodul
AT12058U1 (de) * 2010-04-27 2011-09-15 Austria Tech & System Tech Verfahren zum kontaktieren eines photovoltaischen moduls mit einem anschlussgehäuse sowie system bestehend aus einem photovoltaischen modul und einem anschlussgehäuse
US20110308562A1 (en) 2010-06-22 2011-12-22 Miasole Photovoltaic module electrical connectors
US20120152349A1 (en) * 2010-12-17 2012-06-21 Solopower, Inc. Junction box attachment for photovoltaic thin film devices
PL2618381T3 (pl) * 2012-01-18 2014-10-31 Eppstein Tech Gmbh Układ zespolony do zastosowania fotowoltaicznego ze stroną tylną z folii metalowej
US20140060622A1 (en) * 2012-08-31 2014-03-06 Primestar Solar, Inc. Direct connection of lead bar to conductive ribbon in a thin film photovoltaic device
US10090430B2 (en) * 2014-05-27 2018-10-02 Sunpower Corporation System for manufacturing a shingled solar cell module
DE102013013829A1 (de) * 2013-08-21 2015-02-26 Mühlbauer Ag Anschlussadapter für Photovoltaik-Halbzeuge zur Herstellung von Solarprodukten
JP2015154049A (ja) 2014-02-19 2015-08-24 三菱化学株式会社 薄膜太陽電池モジュール

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US20220285641A1 (en) 2022-09-08
DE102019122213A1 (de) 2021-02-25
CN114467185A (zh) 2022-05-10
WO2021032250A1 (fr) 2021-02-25
JP2022545438A (ja) 2022-10-27

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