EP4018154A1 - Diffraktives optisches element für ein prüfinterferometer - Google Patents
Diffraktives optisches element für ein prüfinterferometerInfo
- Publication number
- EP4018154A1 EP4018154A1 EP20764950.0A EP20764950A EP4018154A1 EP 4018154 A1 EP4018154 A1 EP 4018154A1 EP 20764950 A EP20764950 A EP 20764950A EP 4018154 A1 EP4018154 A1 EP 4018154A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- test
- structures
- profile
- optical element
- diffractive optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
- G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
- G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02034—Interferometers characterised by particularly shaped beams or wavefronts
- G01B9/02038—Shaping the wavefront, e.g. generating a spherical wavefront
- G01B9/02039—Shaping the wavefront, e.g. generating a spherical wavefront by matching the wavefront with a particular object surface shape
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/005—Testing of reflective surfaces, e.g. mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/025—Testing optical properties by measuring geometrical properties or aberrations by determining the shape of the object to be tested
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0271—Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
- G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/32—Holograms used as optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/26—Processes or apparatus specially adapted to produce multiple sub- holograms or to obtain images from them, e.g. multicolour technique
- G03H1/30—Processes or apparatus specially adapted to produce multiple sub- holograms or to obtain images from them, e.g. multicolour technique discrete holograms only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B2005/1804—Transmission gratings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/0005—Adaptation of holography to specific applications
- G03H2001/0033—Adaptation of holography to specific applications in hologrammetry for measuring or analysing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/0005—Adaptation of holography to specific applications
- G03H2001/0072—Adaptation of holography to specific applications for wavefront conjugation wherein the hologram generates a wavefront conjugating a predetermined object, e.g. null testing, positioning, comparative holography
Definitions
- the invention relates to a diffractive optical element for a test interferometer for measuring a shape of an optical surface, such a test interferometer, a calibration method for calibrating a diffractive optical element, a measuring method for measuring a shape of an optical surface, and a method for producing diffractive optical elements.
- Microlithography is used to manufacture microstructured components, such as integrated circuits or LCDs.
- the microlithography process is carried out in what is known as a projection exposure system, which comprises an illumination device and a projection objective.
- mirrors are used as optical components for the imaging process.
- a highly accurate test of the mirror surfaces takes place in particular in a test interferometer in which a diffractive optical element in the form of a computer-generated hologram (CGH) is used to adapt the test wave to a nominal shape of the mirror surface to be tested.
- CGH computer-generated hologram
- a diffractive optical element for a test interferometer for measuring a shape of an optical surface which comprises: diffractive shape measurement structures which are arranged on a useful surface of the diffractive optical element and configured to do so when the diffractive optical element is arranged Elements in the test interferometer to generate a test wave for irradiation on the optical surface to be measured, as well as at least one test field which is configured to measure several profile properties of test structures contained in the test field.
- the profile properties characterize a profile profile of the test structures extending transversely to the usable area and include a flank angle of the profile profile of the test structures, a profile depth of the test structures and a depth of a micro trench that occurs in a bottom area of a trench-shaped profile of the test structures.
- the test field is arranged at a location on the usable surface instead of the diffractive shape measurement structures in such a way that it is surrounded by several of the diffractive shape measurement structures.
- the wording, according to which the test field is surrounded by several of the diffractive shape measurement structures, means that the diffractive shape measurement structures are arranged at least at an angle of 180 °, in particular at an angle of 360 °, around the test field.
- the diffractive shape measurement structures can surround the test field over the entire surface or can also be arranged in surface areas around the test field in such a way that gaps remain between the surface areas.
- test fields of this type are each arranged at locations on the usable area instead of the diffractive shape measurement structures that the respective test field is surrounded by several of the diffractive shape measurement structures.
- the profile properties that characterize a profile course of the test structures running transversely to the usable area each represent a geometric property of the test structures.
- test structures mentioned makes it possible to measure the profile properties of the test structures contained therein with a high degree of measurement accuracy, and from this a corresponding profile property for the diffractive shape measurement structures derive and thus determine the geometric properties of the diffractive shape measurement structures with a high degree of accuracy.
- shape measurement structures are diffractive is to be understood as meaning that they have a diffractive property in relation to the wavelength of the test wave used in the test interferometer.
- the profile depth is also often referred to as the etching depth, since the profile shape is mostly formed by etching processes.
- a micro trench which is often also referred to by the English term “m-trench”, represents a substructure compared to the main trench represented by the trench-shaped profile, i.e. it is significantly smaller than the main trench.
- the usable area is arranged on an upper side of the diffractive optical element, the upper side comprises a central area comprising at least 50% of its area, and the test field is arranged in the central area.
- the central area of the upper side defined in this way is thus completely surrounded by an edge area.
- test fields in particular at least 10 test fields, at least 50 test fields or at least 100 test fields, are arranged at several locations on the usable area instead of the diffractive shape measurement structures in such a way that the respective test field is surrounded by several of the diffractive shape measurement structures.
- the shape measurement structures and the test fields are each arranged at several locations on the usable area, i.e. they are each arranged over the usable area. The locations at which the shape measurement structures are arranged differ from the locations at which the test fields are arranged.
- test structures and the shape measurement structures each have a structure pattern extending along the usable area and a profile profile extending transversely to the usable area, which is characterized by at least one profile property, the structure pattern of the test structures being configured in such a way that one at A measurement accuracy that can be achieved when measuring the profile property of the test structures is increased compared to a further measurement accuracy that can be achieved when measuring the profile property of the shape measurement structures.
- the profile shape measurement of the shape measurement structures relates to the measurement of the profile shape of the shape measurement structures, which also extends transversely to the usable area.
- the measurement accuracy that can be achieved in each case in the profile shape measurement of the test structures and the shape measurement structures relates to the same measurement method. Increased measurement accuracy is understood to mean that the maximum deviation of the measured shape from the actual shape is reduced.
- the test fields each comprise a set of test structures, the structure patterns of the test structures in each set being similar, in particular identical. That is, the structure patterns of the test structures in the set of a first test field are also contained in the same or identical form in the set of another test field.
- a similar shape is to be understood as meaning that an essential structural parameter remains the same or varies by a maximum of +/- 10%, while another parameter of the test structures can vary to a greater extent.
- the test structures of the individual test fields can remain the same in terms of their periodicity, while the degree of surface occupancy of the test structures is varied from test field to test field, for example by changing the line width.
- structure patterns of different test structures of a respective test field are configured for measuring different profile properties of the test structures.
- the structure pattern of a first type of test structures of the respective test field is for measuring a first property of the profile shape of the first type of test structures
- the structure pattern of a second type of test structures of the respective test field is for measuring the second property of the profile shape of the test structures, etc. configured.
- a structure pattern of the test structures is configured for a measurement by means of a diffraction measuring stand.
- the structure pattern of the test structures is configured in such a way that a measurement of the at least one profile property of the test structures is possible by means of a diffraction measurement stand, in particular the structure pattern is optimized for measurement by means of a diffraction measurement stand.
- the shape of the test structures can be designed in such a way that the at least one profile property to be measured can be measured with a higher degree of accuracy by means of a diffraction measurement stand than by means of other measurement methods.
- the test structures are diffractive test structures with regard to the wavelength used by the diffraction measuring stand.
- a structure pattern of the test structures is configured for measurement by means of a scanning probe microscope.
- a scanning probe microscope also referred to as SPM, can be designed as an atomic force microscope or as an atomic force microscope (AFM).
- the structure pattern of the test structures is configured in such a way that it is possible to measure at least one property of the profile shape of the test structures by means of a scanning probe microscope, in particular the structure pattern is optimized for measurement by means of a scanning probe microscope.
- the shape of the test structures can be designed in such a way that the at least one property of the profile shape to be measured can be measured with a higher accuracy using a scanning probe microscope than using other measuring methods.
- a structure pattern of the test structures is configured both for measurement by means of a diffraction measuring stand and for measurement by means of a scanning probe microscope.
- test structures of the test field include at least one structure pattern which is configured for measurement by means of a diffraction measuring stand, and at least one further structure pattern which is configured for measurement by means of a scanning probe microscope.
- a structure pattern of the test structures has periodically repeating and identically aligned edges, the periodicity of the edges being below a resolution of a diffraction measuring stand operated with visible light.
- the resolution of a diffraction measuring stand operated with visible light is below 300 pm, in particular below 100 pm, below 50 pm or below 10 pm.
- the periodically repeating edges are spaced between 100 nm and 1 pm.
- the periodically repeating edges can be the edges of periodically arranged parallel straight lines, each pointing in the same direction. That is to say, the lines are parallel to one another and, according to one embodiment, have a periodicity between 100 nm and 2 pm, in particular between 300 nm and 1000 nm, for example approximately 500 nm.
- the ratio of the line width to the space between the lines can vary from 1: 1 to 1:10. With a width-to-space ratio of 1: 1, the periodicity of the line pattern is twice as large as the respective line width.
- the line width can be at most 1000 nm, at most 500 nm, at most 300 nm, at most 200 nm or at most 50 nm.
- the test fields each contain a plurality of structure patterns which differ in different combinations of the parameters mentioned above.
- the various structure patterns have different edge periodicities, for example one structure pattern can have an edge periodicity of 100 nm, a second of 500 nm and a third of 1 pm, etc.
- structure patterns with width-to-space ratios etc. differing from one another can be contained in the test fields.
- the periodically repeating edges can also be the edges, pointing in the same direction, of periodically arranged parallel lines having regular interruptions.
- the interruptions can be alternately offset from line to line in the direction of the line, so that a brick pattern results.
- the edge periodicity is less than 4 pm, in particular less than 1 pm or less than 400 nm.
- test fields each comprise further test structures with likewise periodically repeating and identically oriented edges, the edges of the further test structures being oriented transversely, in particular perpendicular, to the edges of the first test structures.
- test structures have periodically arranged two-dimensional structures.
- These can be, for example, rectangular structures, in particular the brick pattern mentioned above, or structures with line segments arranged perpendicular to one another, such as structures in the shape of the letter "F".
- the test field comprises an unstructured test field section or the test fields each comprise an unstructured test field section, the diffractive optical element at least in the area of the unstructured test field section has an anti-reflective coating.
- the antireflection coating is arranged on the rear side of the diffractive optical element, ie on that side of the diffractive optical element which is opposite the useful side of the diffractive optical element having the diffractive shape measurement structures.
- the test field or the test fields each have a test field section with shape measurement structures serving for a control.
- This test field section is also referred to as the background window. It is used for a control measurement to determine whether the region in which the relevant test field is arranged on the diffractive optical element is representative of the locations of the usable area which contain the shape measurement structures used for the measurement with the test interferometer.
- a shape measurement structure provided for measurement with the test interferometer can be measured in the closest possible vicinity of the reference test field section using the measurement method of choice, such as by measurement in the diffraction measurement stand or measurement using a scanning probe microscope.
- the shape measurement structures mentioned above are then measured in the reference test field section of the test field using the same measurement method. By comparing the measurement results, it can be ensured that the measurements in the test field are representative of the shape measurement structures provided for measurement with the test interferometer.
- the test field or the test fields each comprise a test field section serving as a reference with reference structures that can be resolved by means of an optical microscope.
- These reference structures can include markings by means of which a correct alignment of the test fields can be checked both with regard to rotation and also with regard to translation.
- the reference structures can each include an identification number for the unambiguous assignment of the measurements taken with respect to a specific test field to the design properties of the test structures on which the measurements are based.
- a test interferometer for measuring a shape of an optical surface is provided which comprises a diffractive optical element in one of the embodiments or variants described above.
- test interferometer comprises an interferometry module for generating an interference pattern by superimposing a reference wave with the test wave generated by means of the diffractive shape measurement structures after its interaction with the optical surface, as well as an evaluation device for determining the shape of the optical surface by evaluating the interferogram taking into account at least one previously determined Calibration value of the diffractive optical element.
- a calibration method for calibrating a diffractive optical element with diffractive shape measurement structures which are arranged on a useful surface of the diffractive optical element and each configured to generate a test wave when the diffractive optical element is arranged in a test interferometer configured to measure a shape of an optical surface To generate radiation on the optical surface to be measured.
- the calibration method according to the invention comprises arranging the diffractive optical element in a measuring device and measuring test fields arranged at several locations on the usable area, each of which has test structures with a profile course extending transversely to the usable area, in order to determine several profile properties of the test structures relating to the profile course.
- the profile properties include a flank angle of the profile profile of the test structures, a profile depth of the test structures and a depth of a micro trench which occurs in a bottom region of a trench-shaped profile of the test structures.
- the calibration method according to the invention comprises a determination of a calibration value used to calibrate the shape measurement structures when measuring the optical surface from the profile properties determined. The calibration value can then be taken into account when measuring the shape of the optical surface in the test interferometer, in which the test wave used is generated by means of the shape measurement structures.
- the calibration value is determined in particular by simulation calculation using Maxwell's equations.
- the profile depth is also often referred to as the etching depth, since the profile shape is mostly formed by etching processes.
- a micro trench which is often referred to by the English term “m-trench”, represents a substructure in comparison to the main trench represented by the trench-shaped profile, ie it is significantly smaller than the main trench.
- the diffractive optical element calibrated in the calibration method is configured according to one of the embodiments or embodiment variants described above.
- the measuring device comprises a diffraction measuring stand; when measuring the test fields, several test waves, each differing in at least one optical parameter, are radiated onto the test fields and at least one of the profile properties is determined by evaluating intensity distributions of the test waves recorded by means of the diffraction measuring stand Interaction with the test fields determined.
- the different test waves differ in their wavelength and / or their polarization.
- the wavelengths are between 300 nm and 800 nm.
- test waves with at least 4, for example 7 to 12, wavelengths and 2 to 4 different polarization directions are used.
- 7 different wavelengths and 4 different polarization directions approximately 0 °, 45 °, 90 ° and 135 °
- 28 test waves with different optical parameters each are radiated onto the test fields.
- the measuring device comprises a scanning probe microscope.
- the profile properties also include a structure width of the test structures.
- At least one contour property of the test structures ie a shape property of a structure pattern extending along the useful surface and formed by the test structures, is determined in the calibration method and a further calibration value for calibrating the shape measurement structures is determined therefrom.
- a contour property describes a deviation of the plan view contour from a required target contour, in particular anisotropic deviations therefrom.
- the profile properties include a structure width of the test structures.
- the transmission or reflection properties of unstructured areas (effect of an antireflection layer) of the diffractive optical element are also determined from the test fields in the calibration method.
- the test fields are measured by means of several different measurement methods and the profile properties are determined by calculating the measurement results determined by means of the different measurement methods.
- the different measurement methods can include the method described above for determining the at least one of the profile properties by means of intensity distributions recorded by means of a diffraction measuring stand, as well as the method for determining the at least one of the profile properties by means of a scanning probe microscope.
- Other measurement methods that can be used here include transmission electron measurements (TEM), measurements with a scanning near-field microscope, such as a so-called TSOM (Through Focus Scanning Optical Microscope), X-ray measurements (XRT) as well as scatterometric methods such as goniometry, ellipsometry, reflectometry etc. carried out independently of the diffraction measurement stand
- the calculation of the measurement results determined by means of the various measurement methods can, for example, be done by means of the “Improving optica! measurement uncertainty with combined multitool metrology using a Bayesian approach ", Applied Optics, Vol. 51, no. 25, September 2012, pages 6196-6206 described Bayesian approach, by means of iterating back and forth and / or by means of a parameter separation. Furthermore, a common comprehensive model can be used for the various measurement methods.
- a measuring method for measuring a shape of an optical surface comprises the following steps: determining a calibration value of a diffractive optical element by means of the calibration method in one of the embodiments or design variants described above, generating a test wave by means of the shape measurement structures of the diffractive optical element Recording an interferogram generated by superimposing a reference wave on the test wave after interaction with the optical surface, and determining the shape of the optical surface by evaluating the recorded interferogram taking into account the calibration value.
- a method for producing diffractive optical elements for a test interferometer for measuring a shape of an optical surface comprises the steps: production of the diffractive optical elements each with diffractive shape measurement structures, which are arranged on a useful surface of the respective diffractive optical element and configured to produce a test wave for inputting a test wave when the respective diffractive optical element is arranged in the test interferometer.
- the method according to the invention comprises measuring the test fields of the diffractive optical elements in order to monitor the stability of the manufacturing process.
- the test field or test fields are designed identically on the various diffractive optical elements.
- the respective test field is configured to measure at least one geometric property of test structures contained in the test field.
- the diffractive optical elements produced in the manufacturing process can in particular be present in the above-described embodiments or design variants of the diffractive optical element according to the invention.
- FIG. 1 shows an embodiment of a diffractive optical element with diffractive shape measurement structures arranged on a usable area and test fields distributed over the usable area in a top view
- FIG. 2 shows a detail of an embodiment of a structure pattern of the diffractive shape measurement structures according to FIG. 1 in plan view
- 3 shows a cross section through the diffractive shape measurement structures from FIG. 2 along the line III-III
- FIG. 4 shows an embodiment of one of the test fields according to FIG. 1 in a top view with a large number of test field sections
- FIG. 5a shows an embodiment of one of the test field sections according to FIG. 4 in the form of a so-called horizontal line test field section in plan view
- FIG. 5b shows an embodiment of one of the test field sections according to FIG. 4 in the form of a so-called vertical line test field section in a top view
- FIG. 5c shows an embodiment of one of the test field sections according to FIG. 4 in the form of a so-called brick pattern test field section in plan view
- FIG. 5d shows an embodiment of one of the test field sections according to FIG. 4 in the form of a first so-called F-pattern test field section in a top view
- FIG. 5e shows an embodiment of one of the test field sections according to FIG. 4 in the form of a second so-called F-pattern test field section in plan view, FIG.
- 5f shows a cross-sectional view of the diffractive optical element according to FIG. 4 in the area of an unstructured test field section
- FIG. 6 shows an embodiment of a test interferometer for measuring a shape of an optical surface using the diffractive optical element according to FIG. 1,
- FIG. 7 shows an embodiment of a diffraction measuring stand for measuring profile properties of test structures in the test fields of the diffractive optical element according to FIG. 1
- 8 shows an embodiment of a scanning probe microscope for measuring profile properties of test structures in the test fields of the diffractive optical element according to FIG. 1
- FIG. 9a shows a further detail of an embodiment of a structure pattern of the diffractive shape measurement structures according to FIG. 1 in a top view
- FIG. 9b shows a cross-section through the diffractive shape measurement structures according to FIG. 9a along the line B-B ‘,
- 10a shows an embodiment of a structure pattern of test structures of one of the test field sections according to FIG. 4 in a top view
- FIG. 10b shows a cross section through the test structures according to FIG. 10a along the line B-B ‘,
- FIG. 11 shows an illustration of a relationship between the depth and the width of a trench of a test structure
- FIG. 12a shows an embodiment of a further structure pattern of test structures of one of the test field sections according to FIG. 4 in plan view
- FIG. 12b shows a cross section through the test structures according to FIG. 12a along the line B-B ‘,
- FIG. 13a shows an example of a transmission behavior of the diffractive optical element with respect to a test radiation irradiated in the diffraction measuring stand according to FIG. 7,
- 13b shows a distribution of flank angles of a test structure, determined by means of the diffraction measuring stand according to FIG. 7, before and after correction based on the transmission behavior according to FIG. 13a
- 14a an illustration of a rectangular structure with a first type of contour deviation from its nominal shape
- 14c shows an illustration of a rectangular structure with a third type of contour deviation from its nominal shape, as well as
- 15 shows a flow diagram to illustrate an exemplary embodiment of a calculation of measurement results determined by means of different measurement methods.
- a Cartesian xyz coordinate system is indicated in the drawing, from which the respective positional relationship of the components shown in the figures results.
- the z-direction runs perpendicular to the plane of the drawing out of this, the x-direction to the right and the y-direction upwards.
- 1 shows an embodiment of a diffractive optical element 10 in the form of a computer-generated hologram (CGH).
- the diffractive optical element 10 is used to measure a shape of an optical surface 102 of a test object 104 by means of a test interferometer 100, as explained in more detail below with reference to FIG. 6.
- the diffractive optical element 10 comprises diffractive shape measurement structures 16 in the form of CGH structures, which are arranged on a useful surface 14 of the diffractive optical element 10.
- the usable area 14 extends over a large part of a surface 12 of the diffractive optical element 10.
- the diffractive optical element 10 is configured as a circular disk and the surface 12 corresponds to the top of the circular disk.
- the usable area 14 is elliptical, the small semiaxis being oriented in the x direction so that the left and right edge sections of the surface 12 do not belong to the usable area 14.
- the usable area 14 is completely covered by the diffractive shape measurement structures 16, with the exception of areas provided for the test fields 18.
- the test fields 18, also referred to as markers, are arranged at a multiplicity of locations on the usable area 14, some of the test fields 18 having a regular arrangement.
- so-called forbidden areas 22 and preferred areas 20 are also defined on the usable area 14. While no test fields 14 are arranged in the forbidden areas 22, test fields 14 are particularly preferred or are arranged in a particularly high density in the preferred areas 20. The exact structure of the test fields 14 is explained in more detail below with reference to FIGS. 4 and 5.
- the test interferometer 100 is a highly coherent interferometer in the form of a Fizeau interferometer executed.
- the test interferometer 100 comprises a test radiation source 106 for generating a test radiation 108, for example in the visible wavelength range.
- the test radiation source 105 can for example comprise a laser such as a helium-neon laser.
- the test radiation 108 propagates along an optical axis 110 of the test interferometer 100 and initially passes through a beam splitter 112.
- the test radiation 108 then hits a focusing lens in order to convert the test radiation 108 into a plane wave, which then hits a reference element 116 in the form of a Fizeau element with a Fizeau surface 118. Part of the test radiation 108 is reflected on the Fizeau surface 118 as a reference wave 120.
- the portion of the test radiation 108 passing through the Fizeau surface 118 has a plane wavefront in the present example and is referred to below as incoming test radiation 108s.
- the incoming test radiation 108i then passes through the diffractive optical element 10.
- the wavefront of the test radiation 108i is adapted to a nominal shape of the surface 102 of the test object 104 by the diffractive shape measurement structures 16 arranged thereon.
- the resulting wave is referred to here as test wave 122.
- the test wave 122 with the adapted wavefront is then reflected on the surface 102 to be measured.
- the reflected test wave 122r runs back in the beam path of the incoming test radiation 108i in the opposite direction, passes through the diffractive optical element 10 and the reference element 116 and is thereupon by the beam splitter 112 together with the reference wave 120 via a diaphragm 124 and an eyepiece 126 onto the surface a detector camera 128 steered.
- the arrangement of the reference element 116, the focusing lens 114, the beam splitter 112, the diaphragm 124 and the eyepiece 126 is also referred to in this text as the interferometry module 127.
- the reference element 116 is connected to a displacement unit, for example in the form of a piezo element.
- the displacement unit allows the reference element 116 to be displaced in the direction of the optical axis 110 by fractions of the wavelength of the test radiation 108. By shifting in this way, the phase of the reference wave 120 can be varied. This has the consequence that the intensity distributions generated on the detector camera 128 are changed. The intensity distributions resulting for different positions of the reference element 116 are recorded by the detector camera 128 and evaluated in an evaluation device 130.
- Calibration values 86 of the diffractive optical element 10 determined in advance are taken into account by the evaluation device 130.
- the calibration values 86 relate to profile properties 36 of the diffractive shape measurement structures 16, which characterize a profile profile 26 of the shape measurement structures 16 extending transversely to the useful surface 14.
- the procedure for determining the calibration values 130 is explained in detail below.
- the result of the evaluation of the recorded intensity distributions is the deviation of the actual shape of the optical surface 102 from its desired shape, from which the actual shape of the optical surface 102 is then derived.
- the structure pattern 24 is understood to be the pattern recognizable in plan view of the diffractive shape measurement structures 16.
- the structure pattern 24 of the diffractive shape measurement structures 16 is essentially formed by a pattern of horizontal lines, the respective shape of which is distorted in an irregular manner.
- the structure pattern 24 of the diffractive shape measurement structures 16 can, according to one embodiment, be configured as a simply coded CGH pattern for generating the test wave 122 from the incoming test radiation 108i in the test interferometer 100 configured as a Fizeau interferometer according to FIG. 6. According to further In embodiments, the structure pattern 24 can also be configured as a multi-coded CGH pattern. In the case of such a multi-coded CGH pattern, the structure pattern 24 contains a superposition of several CGH patterns, so that the incoming test radiation 108i is converted into a plurality of outgoing waves at the same time in each case in the first diffraction order.
- the outgoing waves can also include calibration waves and possibly also a reference wave when using an interferometer type with a reference mirror downstream of the diffractive optical element 10.
- the structure pattern 24 is configured as a five-way-coded CHG structure pattern for generating the test wave 122, a reference wave and three calibration waves.
- FIG. 3 shows a cross section through the diffractive shape measurement structures 16 along the line III-III 'in FIG. 2 and thus a profile profile 26 of the relevant part of the shape measurement structures 16 that extends transversely to the useful surface 14.
- the profile profile 26 essentially shows the profile of a along the trench 28 running in the x direction.
- the trench 28 has side walls, also called flank areas 30, and a bottom area 32.
- the width d of the trench 28 at the level of the surface 12 is denoted by the reference symbol 37.
- the level difference between the surface 12 of the diffractive optical element 12 and the base region 32 is called the profile depth dp (reference numeral 36-1) or etching depth for the illustrated case in which the trench 28 was produced by etching in the material 19 of the diffractive optical element 10 , designated.
- the material 19 can for example be a quartz glass.
- flank areas 30 of the trench 28 do not run completely perpendicular, but are each inclined by a flank angle relative to the perpendicular to the surface 12, the flank angle of the left flank area 30 being denoted by cn (reference numeral 36-2) and the flank angle of the right flank area 30 denoted by 02 (reference number 36-3). Furthermore, the etching process used has the undesirable side effect that Form micro trenches 34 at the transition between the flank areas 30 and the bottom area 32.
- profile properties 36 of the profile profile 26 of the shape measurement structures 26 are parameters with which manufacturing deviations of the real profile profile 26 of the shape measurement structures 26 from their nominal profile can be characterized. However, these manufacturing deviations lead to undesired errors in the wavefront of test wave 122 in test interferometer 100 according to FIG. 6.
- Test fields 18 mentioned in FIG. 1 are provided on the useful surface 14 of the diffractive optical element 10.
- the test fields 18 enable the profile properties 36 of the shape measurement structures 26 to be estimated as precisely as possible using the test structures 38 contained therein and to provide them to the evaluation device 130 of the test interferometer 100 for error correction when determining the shape of the optical surface 102.
- test fields 18 An embodiment of one of the test fields 18 is shown in plan view in FIG. This is configured as a matrix of test field sections 40 arranged in five rows and five columns. Further embodiments of the test fields 18 can also include matrices of more or fewer rows and columns.
- the test field sections 40 have rectangular, especially square, shape and are designated according to the scheme 40-SZ, where “S” stands for the relevant column and “Z” for the relevant row in the matrix.
- the test field section designated with “H1” in FIG. 4 is designated with the reference symbol 40-21.
- the side lengths of the test fields 18 are in the range from 0.1 mm to 3 mm, in particular in the range from 0.5 mm to 1.5 mm.
- FIG. 5a shows the test field section 40-21 labeled “H1” in FIG. 4 in a top view.
- this is configured as a so-called horizontal line test field section and includes test structures 38
- their structure pattern 39 comprises parallel straight lines 42 arranged periodically horizontally in plan view, ie in the x direction.
- the lines 42 are separated by respective spaces 44.
- the lines 42 each have an upper edge 46-1 and a lower edge 46-2.
- the structure pattern 39 of the horizontal line test field section 40-21 with the upper edges 46-1 and the lower edges 46-2 in each case includes periodically repeating, identically aligned edges.
- the periodicity of the edges 46-1 and 46-2 is characterized in FIG. 5a by the period p and, according to one embodiment, lies below the resolution of a diffraction measuring stand 60 operated with visible light and explained in more detail below with reference to FIG. 7.
- the resolution according to one embodiment, such a diffraction measuring stand is below 300 pm, in particular below 100 pm, below 50 pm or below 10 pm.
- the periodicity of the edges 46-1 and 46-2 can be between about 100 nm and 1 pm, in particular between 300 nm and 800 nm, for example at about 500 nm, according to different design variants.
- the ratio of the respective width of the lines 42 and the respective width of the spaces 44, the so-called width / gap ratio, can vary between 1: 1, as shown in FIG. 5a, and 1:10.
- the test field sections marked in FIG. 4 with “H2”, “H3”, “H4”, “H5”, “H6”, “H7” and “H8” comprise periodically arranged parallel ones straight lines 42 of the type shown in FIG. 5a with different width / gap ratios and / or different periodicities p, in particular they can include lines 42 of different widths with the same periodicity.
- a profile profile 58 of the relevant part of the test structures 38 results, which structurally corresponds to the profile profile 58 shown in FIG. 3 of the relevant part of the shape measurement structures 16. That is, the profile of the sequence of intermediate space 44, line 42 and further intermediate space 44 along line III-IIG according to FIG. 5a is also the profile of a trench 28 running along the x direction. This trench 28 also has flank regions 30, a Bottom area 32 and micro-trenches 34.
- the corresponding profile properties 36 in particular the profile depth 36-1 of the trench 28, the flank angles 36-2 and 36-3 and the depth 36-4 of the micro-trenches 34, can thus also be determined for the test structures 38 and as an approximate estimate of the corresponding profile properties 36 of the shape measurement structures 16 arranged in the vicinity of the relevant test field 18 can be used.
- FIG. 5b shows the test field section 40-11 labeled “V1” in FIG. 4 in a top view.
- the vertical line test field sections comprise test structures 38, the respective structure pattern 39 of which comprises parallel straight lines 42 arranged periodically vertically, ie in the y direction, in a top view.
- the structure pattern 39 according to FIG. 5b is obtained by rotating the structure pattern 39 according to FIG. 5a by 90 °.
- test structures 38 according to FIG. 5b are viewed in cross section along the line III-IIG running in the x direction, the profile profile 58 shown in FIG. 3 in the yz cross-sectional plane results analogously for the xz cross-sectional plane.
- the in Fig. 4 with “V2", “V3”, “V4", “V5", “V6” and “V7
- the test field sections marked include periodically arranged parallel straight lines 42 of the type shown in FIG. 5b with different width / gap ratios and different periodicities p.
- FIG. 5c shows the test field section 40-22 labeled “B1” in FIG. 4 in a top view.
- the test field section 40-22 comprises rows, arranged in the horizontal direction, of periodically arranged two-dimensional structures in the form of rectangular structures 50 or brick-shaped structures. These rows are repeated in the y-direction, interrupted by linear spaces 44, with successive rows each being offset in the x-direction, so that a brick pattern results.
- the structure pattern according to FIG. 5c also corresponds to the line pattern according to FIG. 5a with the difference that regular interruptions 48 are provided in the lines 42.
- test field sections marked “B2”, “B2” and “B4” in FIG. 4 each comprise brick patterns of the type shown in FIG. 5a, but differ therefrom in particular in the orientation of the lines 42, the periodicity of the lines 42, the lines / Gap ratio, the periodicity of the breaks 48 and / or the displacement pattern of the rows of tiles.
- FIGS. 5d and 5e show the test field sections 40-33 and 40-43 identified in FIG. 4 with “F1” and “F2” in a top view.
- These test field sections as well as the test field section marked with “F3” are configured as so-called F-sample test field sections and for this purpose comprise periodically arranged 2-dimensional structures in the form of the letter “F”.
- the structure patterns 39 in the various F-pattern test field sections can differ by periodicity, spacing and size of the letter "F", as is the case between the structure patterns 39 of FIGS. 5d and 5e, and / or the orientation of the letter "F” distinguish.
- the structure patterns 39 of the test structures 38 in the individual test field sections 40 of the test fields 18 described above are specifically selected so that some or all of the aforementioned profile properties 36 can be measured with a particularly high measurement accuracy by means of a measuring device provided for this purpose.
- the structure patterns 39 of the test structures 38 are configured in such a way that some or all of the profile properties 36 can be measured by means of the measuring device provided for this purpose with a measurement accuracy that is greater than a measurement accuracy that can be achieved when measuring the corresponding profile properties 36 of the shape measurement structures 16.
- the above-mentioned diffraction measuring stand 60 and a scanning probe microscope 84 explained in more detail below with reference to FIG. 8 come into consideration as a measuring device for measuring the profile properties 36.
- the tile pattern test field sections marked with “B1” to “B4” in Fig. 4 (cf. Fig. 5c) and the F-pattern test field sections marked “F1” to “F3” are not only suitable for measuring the profile properties characterizing the profile profile 58 running transversely to the useful surface 14, but also for measuring one or more contour properties of the test structures 38.
- the measured contour properties of the test structures 38 can be transferred to the shape measurement structures 16 in question. This takes place analogously to the transmission of the profile properties 36 described below.
- a contour property is to be understood as a shape property of a structural pattern of the test structures 38 extending along the useful surface 14, as explained below by way of example with reference to FIGS. 14a to 14c.
- FIGS. 14a to 14c show different actual shapes 50a of a rectangular structure 50 according to FIG. 5c, which differ from a desired shape 50s of the rectangular structure 50 in different ways. These deviations are classified as contour properties.
- the actual shape 50a differs from the nominal shape 50s by an isotropic shift of the Rectangular edges and a rounding of the corners.
- the edge offset is dependent on its immediate surroundings. Furthermore, the corner rounding is more pronounced.
- 14c shows a particularly pronounced example of an anisotropic edge offset.
- top and bottom edges are further out of place than the left and right edges.
- the rounded corners and edge displacements that can be seen in FIGS. 14a to 14c are typically due to diffusion and so-called proximity effects of the lithographic component in the manufacture of the diffractive optical element 10.
- An embodiment of the structure pattern 39 according to FIG. 5a or FIG. 5b with lines and spaces with a periodicity of approximately 500 nm and a width / gap ratio of 1: 1 is particularly suitable for examining the flank shape of the test structures 38 by means of the diffraction measuring stand 60.
- Intensity values, which are determined by means of the diffraction measuring stand 60 for this embodiment of the structure pattern 39, show a high correlation to the flank shape of the test structures 38.
- the flank angles 36-2 and 36-3 of the profile course 58 can thus be derived with high accuracy from the relevant intensity values .
- 2-dimensional structures of higher complexity such as in the brick pattern test field sections according to FIG. 5c or the F-pattern test field sections according to FIG. 5d or FIG. 5e, serves in particular to provide geometric shapes in the structure patterns 39 of FIG Test structures 38 which, in addition to the straight line pattern, approximate other geometric shapes contained in the structure pattern 24 of the shape measurement structures 16.
- the rectangular structures 50 from the tile pattern test field section according to FIG. 5c and the F structures 52 according to FIGS. 5d and 5f are suitable for simulating island-shaped structures or transitions between structure elements oriented perpendicular to one another in the structure pattern 24 of the shape measurement structures.
- FIG. 5f shows the diffractive optical element 10 in the region of the test field section 40-34 according to FIG. 4, which is configured as an unstructured test field section.
- the diffractive shape measurement structures 16 are arranged on what is known as a useful side 55 of the disk-shaped diffractive optical element 10.
- an antireflection coating 56 is applied to the rear side 57 of the diffractive optical element 10, which is opposite the useful side 55. This is adapted to the wavelength of the test radiation 108i radiated onto the diffractive optical element 10 in the test interferometer 100, ie the antireflective coating 56 is configured in such a way that almost no intensity is lost when the test radiation 108 enters the diffractive optical element 10 on its rear side .
- test radiation 64 with a different wavelength is radiated onto diffractive optical element 10 when measuring test fields 18 by means of diffraction measuring stand 60 explained in more detail below with reference to FIG. 7, the effect of anti-reflective coating 56 changes reflected on the rear side 57 of the diffractive optical element 10 (reflected test radiation 64r).
- the intensity of the transmitted test radiation 64t is correspondingly reduced.
- the anti-reflective coating 56 can, depending on the wavelength of the test radiation 64, furthermore have a reflection-reducing effect (destructive interference) or even a reflection-enhancing effect (constructive interference) compared to the reflection on the rear side 57 without an anti-reflective coating 56.
- the unstructured test field section 40-34 is now used in the diffraction measurement stand 60 to determine the influence of the antireflection coating 56 on the intensity of the transmitted test radiation 64t.
- a measurement of the unstructured test field section 40-34 and a corresponding measurement without an arrangement of the diffractive optical element 10 for the different wavelengths of the test radiation 64 are carried out in the diffraction measurement stand 60. From this, using Fresnel's research the corresponding effect of the anti-reflective coating 56 on the measurements of other test field sections 40 of the test fields 18 is determined and taken into account accordingly in the evaluation of these measurements.
- FIG. 13a shows an example of the transmission behavior of the test radiation 64 of a specific wavelength used by the diffraction measuring stand 60 on test fields 18 of the diffractive optical element 10 (see FIG. 1), which are arranged along a line running in the x direction.
- the respective transmission value T was determined on the basis of the respective test field section 40-34 of the relevant test fields 18.
- FIG. 13 a shows a distribution of flank angles a (36-2 or 36-3 according to FIG. 3) determined by evaluating the measurements carried out by means of the diffraction measuring stand 60 with the mentioned wavelength before and after correction based on the transmission behavior from FIG 13a.
- test field 18 shown in FIG. 4 comprises a control test field section 40-32 marked with the letter “K”.
- This contains so-called control structures, which correspond to the shape measuring structures 16 arranged in the usable area 14.
- control structures which correspond to the shape measuring structures 16 arranged in the usable area 14.
- a section of the pattern of the useful surface 16 with the shape measurement structures 16 is arranged in the control test field section 40-32.
- the control test field section 40-32 which can also be referred to as a background window, is used in the diffraction measurement stand 60 or the scanning probe microscope 84 for a control measurement to determine whether the region in which the test field 18 in question is arranged on the diffractive optical element 10 is representative for the regions of the useful surface 14 adjoining the relevant test field 18, so that the profile properties 36 determined on the test structures 38 by measuring the test field 18 can be transferred to the relevant shape measurement structures 16.
- the test field 18 shown in FIG. 4 comprises a so-called reference test field section 40-14.
- This test field section comprises reference structures 54 that can be resolved by means of an optical microscope. These reference structures 54 can comprise markings from which a correct adjustment of the test fields can be checked with regard to both rotation and translation.
- the reference structures 54 can each include an identification number for the unambiguous assignment of the measurements taken with regard to a specific test field 18 to design properties of the test structures 38 on which the measurements are based.
- the information from the reference test field section 40-14 is used in particular when measuring the diffractive optical element 10 by means of the scanning probe microscope 84 described in more detail below.
- Fig. 7 shows an embodiment of the above-mentioned diffraction measurement stand 60 for measuring the profile properties 36 of the test structures 38 in the test fields 18 of the diffractive optical element 10.
- the diffraction measurement stand 60 includes a tunable test radiation source 62 for generating the aforementioned test radiation 64, which is monochromatic is with a wavelength that can be set in the wavelength range between approx. 300 nm and 800 nm.
- the diffraction measuring stand 60 comprises a first focusing lens 66 for focusing the test radiation 64 provided by the test radiation source 62, a polarizer 68 arranged near the focal point of the first focusing lens 66 for polarizing the test radiation 64 and a second focusing lens 70 for the full-area irradiation of the test radiation 64 in the form of a flat test wave 72 onto the diffractive optical element 10 to be measured with regard to the profile properties 36.
- the test wave 72 is transmitted via two Fourier optics 74 and 80 (the second Fourier optics 80 in FIG. 7 being symbolized by two lenses) to a flat-measuring detector 82, which is designed as a CCD sensor, for example can, steered.
- a flat-measuring detector 82 which is designed as a CCD sensor, for example can, steered.
- One between the two The aperture stop 76 arranged in the Fourier optics 74 and 80 serves to eliminate radiation of a higher order of diffraction than the zeroth order of diffraction.
- the detector 82 is used to supply spatially resolved information about the brightness or intensity distribution provided by the diffractive optical element 10 in the zeroth diffraction order.
- the procedure for measuring the profile properties 36 of the test structures 38 by means of the diffraction measuring stand 60 according to FIG. 7 is as follows: One after the other, by appropriately manipulating the tunable test radiation source 62 and arranging different variants of the polarizer 68, test waves 72 with different combinations of different wavelengths and different polarization settings are created irradiated onto the diffractive optical element 10. Depending on the polarization properties of the polarizer 68, a suitable analyzer 68 is arranged.
- 7 to 12 different wavelengths are combined with 2 to 4 different polarization settings.
- the wavelengths used are preferably between 300 nm and 800 nm; for example, the wavelengths 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm and 800 nm can be used become.
- the polarization directions 0 °, 45 °, 90 ° and 135 °, for example, can be used as polarization settings.
- test waves 72 with 11 ⁇ 4, ie 44 different combinations of wavelength and polarization settings are radiated onto the diffractive optical element.
- the detector 82 of the diffraction measuring stand 60 records an associated intensity distribution which contains the intensity values assigned to the individual test field sections 40 of all the intensity values assigned to the surface 12 of the diffractive optical element 10.
- an evaluation device 83 all of the intensity values of all recorded intensity distributions assigned to the individual test field sections 40 are processed, taking into account the design information of the various structural patterns 24 according to FIGS. 5a to 5e in the individual test field sections 40 by means of an evaluation algorithm.
- This processing results in profile properties 36 of the profile courses 58 of the test structures 38, in particular the respective profile depth 36-1, the respective flank angles 36-2 and 36-3 and the respective depth 36-4 of micro-trenches 34 in the profile courses 58 in the various test field sections 40 contained test structures 38.
- Further profile properties 36 of the profile courses 58 which can be determined as a result of the evaluation of the intensity distributions include, for example, so-called “nodging” or so-called “trenching”, in which lower corners in the profile run 58 are indented or rounded.
- material properties of the diffractive optical element 12 such as variations in the refractive index, surface roughness or the contour properties of the test structures 38 explained above, can also be determined by means of the evaluation.
- the structure widths of the test structures can also be determined.
- the evaluation device 83 uses an evaluation algorithm based on rigorous calculations to determine the aforementioned calibration values 86 with respect to the shape measurement structures 16 contained on the useful surface 14 of the diffractive optical element 10.
- the profile properties 36 which profile properties 36 were determined with respect to the individual test fields 18 distributed over the useful area 14, each assigned to shape measurement structures 16 which are arranged in regions of the useful area 14 adjacent to the respective test field 18.
- the local assignment of the profile properties assigned to the shape measurement structures 16 can also be determined by interpolation of the profile properties determined on the individual test fields 18.
- the evaluation device 83 uses a relationship determined on the basis of the test fields 18 between the depth dp and the width b of a trench 28 (cf. FIG. 3). While this relationship can in principle be based on any function, the trench depth dp is often greater the greater the width b of the trench 28, as illustrated in FIG. 11. This effect occurs, among other things, in etching processes on the length scale of a few 100 nm.
- the resolution of the diffraction measuring stand 60 is above 10 miti, an immediate detection of the effect is not possible.
- the horizontal line test field sections 40-21, 40-31, 40-41, 40-51, 40-52, 40-53, 40-54, 40-55 and the vertical line test field sections 40-11, 40-12, 40-13, 40-15, 40-25, 40-35, 40-45 regularly arranged lines 42 of different widths.
- the scanning probe microscope 84 (also referred to as SPM), already mentioned above as an alternative measuring device for measuring the profile properties 36 of the test structures 38, is described.
- the scanning probe microscope 84 is an atomic force microscope or an atomic force microscope (also referred to as AFM).
- a measuring head 89 is built into the scanning probe microscope 84.
- the measuring head 89 is fastened to a frame of the scanning probe microscope 84 (not shown in FIG. 8) by means of a holding device 87.
- the frame allows the diffractive optical element 10 to be positioned at any point, in any orientation.
- the holding device 87 can be rotated about its longitudinal axis, which runs in the horizontal direction.
- a piezo actuator 88 is attached to the holding device 87 of the measuring head 89 and enables the free end of the piezo actuator 88 to be moved in three spatial directions (not shown in Fig. 8).
- a bending beam is attached, which in the following, as is customary in the technical field, is called cantilever 90.
- the cantilever 90 has a holding plate (not shown in FIG. 8) for fastening to the piezo actuator 88.
- the end of the cantilever 90 opposite the holding plate carries a measuring probe 92.
- the measuring probe 92 is pyramidal or conical at its free end.
- the measuring probe 92 can also be designed, for example, cylindrical or, conversely, conical or hammer-like (also referred to as “reentrant”).
- the cantilever 90 and the measuring probe 92 can be made in one piece.
- the cantilever 90 and the measuring probe 92 can be made from a metal such as tungsten, cobalt, iridium, a metal alloy, or from a semiconductor such as silicon or silicon nitride. It is also possible to manufacture the cantilever 90 and the measuring probe 92 as two separate components and then to connect them to one another. This can be done for example by gluing. In particular, the measuring probe 92 can also be produced in two separate steps.
- the diffractive optical element 10 to be measured is fixed on a sample table 94. This can be done, for example, by placing the diffractive optical element 10 on support points of the sample table 94 in a vacuum or high vacuum environment.
- the sample table 94 can be moved in three spatial directions relative to the measuring head 96 of the scanning probe microscope 84 by a positioning system 96. Furthermore, the sample table 94 can be rotated about the normal of the diffractive optical element 10 (not shown in FIG.
- the positioning system 96 is in the form of several rer micromanipulators executed. Furthermore or alternatively, the positioning system 96 can be equipped with stepper motors and / or linear drives for moving the diffractive optical element 10.
- An alternative embodiment of the positioning system 96 could be piezo actuators.
- the positioning system 96 is controlled by signals from a control device. In an alternative embodiment, the control device does not move the sample table 94, but the holding device of the measuring head 89 of the scanning probe microscope 84. It is also possible for the control device to roughly position the diffractive optical element 10 serving as a sample in height (z-direction) and the piezo actuator 88 of the measuring head 89 adjusts the height of the scanning probe microscope 84 precisely.
- the relative movement between the sample and the measuring probe 92 can be divided between the positioning system 96 and the piezo actuator 88.
- the positioning system 96 carries out the movement of the sample in the sample plane (xy plane) and the piezo actuator 88 enables the movement of the measuring probe 92 in the direction of the sample normal.
- the scanning probe microscope 92 can be operated in a one-dimensional or a two-dimensional measuring mode.
- the measuring probe 92 scans the sample line-like in a predetermined measuring direction, with a high spatial resolution in the scanning direction and a comparatively low spatial resolution transversely to the scanning direction due to the selected line spacing (typically a spatial resolution smaller by a factor of 100).
- the line spacing is reduced in such a way that a high spatial resolution is also achieved transversely to the scanning direction, for example a spatial resolution that is only a factor of 10 lower than in the scanning direction.
- the two-dimensional measurement mode is significantly more time-consuming than the one-dimensional measurement mode and is therefore avoided if possible.
- the one-dimensional measuring mode scanning is preferably carried out perpendicular to the plane defined by the axes of symmetry of the cantilever 90 and the measuring probe 92, thereby reducing measuring artifacts.
- the measuring probe is preferably moved quickly perpendicular to that axis of symmetry, while the slower movement takes place perpendicular to it.
- FIG. 9a shows a further section, which differs from the section shown in FIG. 2, of an embodiment of a structure pattern 24 of the diffractive shape measurement structures 16 extending along the useful surface 14.
- the structures which are trench-shaped in cross section, in this case have very irregular shapes with flank areas of different orientation . If the structural pattern shown is now measured by means of the scanning probe microscope 84 described above in the one-dimensional measuring mode with a horizontal scanning direction (in the x direction) along the scanning line B-B ‘, the profile profile 26 shown in FIG. 9b results.
- the exact structure of the profile course 26 is, however, highly dependent on the exact position of the scan line in the y-direction. Furthermore, the flank angles of the measured profile profile 26 are falsified by the pyramid-like or cone-like shape of the measuring probe 92. The extent of the falsification, however, depends on the orientation of the flank areas 30 in the xy plane, i.e. very precise knowledge of the flank orientation along the scan line is necessary to precisely calculate the influence of the shape of the measuring probe 92. Because of these measurement uncertainties, the measurement results determined when measuring the structure pattern 16 of real shape measurement structures 16 in the one-dimensional measurement mode of the scanning probe microscope 84 are mostly too imprecise for the purpose of correcting the surface measurement in the test interferometer 100. The measurement in the two-dimensional measurement mode, on the other hand, is often too complex.
- FIG. 10b shows, along the scan line BB ', the profile course 58 of the structure pattern 39 shown in FIG. 10a in the form of vertical straight lines. Since in this case the orientation of the flank areas 30 varies independently of the position of the scan line in the y direction and also not along the scan line, the influence of the shape of the measuring probe 92 can be calculated very precisely from the measured profile profile 58.
- the relationship between the depth dp and the width b of a trench 28 described above with reference to FIG. 11 can be established by appropriate measurement of the relevant profiles in the horizontal line test field sections 40-21, 40-31, 40-41, 40-51 , 40-52, 40-53, 40-54, 40-55 and the vertical line test field sections 40-11, 40-12, 40-13, 40-15, 40-25, 40-35, 40-45 can be determined by means of the scanning probe microscope 84 with particularly great accuracy.
- the reference test field section 40-14 is preferably used for the correct adjustment of the corresponding test fields 18.
- FIG. 12a shows a detail from a further embodiment of a test field section 40 which essentially has the inverse structure of the tile pattern test field section 40-22 shown in FIG. 5c and rotated by 90 °.
- the rectangular structures 50 in the structure pattern according to FIG. 12a are surrounded by trenches 18.
- FIG. 12b shows the profile profile 58 measured by means of the scanning probe microscope 84 along the line BB 'in FIG. 12a. It can be clearly seen here that the trench depth in the intersection areas between vertical and horizontal Trench sections is largest, while it has a minimum 98 halfway between the intersection areas due to the narrow trench width prevailing there.
- the signature of the trench depth shown can be measured very precisely with the scanning probe microscope 84 and the corresponding relationship with the design of the structure pattern can be used when determining the calibration values 86 of the shape measurement structures 16.
- the profile properties 36 can, as in the measurement using the diffraction measuring stand 60, the profile depth 36-1, the respective flank angles 36-2 and 36-3 and the respective depth 36-4 of micro-trenches in the profile courses 58 of the test structures contained in the various test field sections 40 38 included.
- Further profile properties 36 of the profile courses 58 which can be determined using the scanning probe microscope 84, include, for example, the “nodging” or “trenching” already explained with reference to the diffraction measuring stand 60.
- material properties of the diffractive optical element 12 in terms of surface roughness or also with regard to contour properties of the test structures 38 can be determined with the aid of the scanning probe microscope 84.
- the structure widths of the test structures can also be determined. Analogous to the mode of operation of the evaluation device 83 of the diffraction measuring stand 60, the evaluation device 83 shown in FIG. 8 determines the calibration values 86 from the determined profile properties 36 with respect to the shape measurement structures 16 contained on the useful surface 14 of the diffractive optical element 10.
- At least some of the vertical line test field sections 40-11, 40-12, 40-13, 40-15, 40-25, 40-35, 40-45, of the horizontal line test field sections 40-21 , 40-31, 40-41, 40-51, 40-52, 40-53, 40-54, 40-55, the tile pattern test field sections 40-22, 40-42, 40-23, 40-24 and of the F-pattern test field sections 40-33, 40-43, 40-44 are measured both by means of the diffraction measuring stand 60 and by means of the scanning probe microscope 84 as described above.
- the profile properties 36 of the profile courses 58 of the test structures 38 are determined from the measurement results, possibly with suitable consideration of the control test field section 40-32, the unstructured test field section 40-34 and the above-described relationships between the design dimensions of the corresponding structure pattern and the trench depth.
- the test fields are measured by means of several different measurement methods, in the present case by means of the measurement methods based on the diffraction measurement stand 60 and the scanning probe microscope 84, and the profile properties 36 are determined by calculating the measurement results determined by means of the different measurement methods.
- TEM transmission electron measurements
- TSOM Thin Film Optics
- XRT X-ray measurements
- scatterometric methods carried out independently of the diffraction measurement stand like goniometry, ellipsometry, reflectometry etc.
- the calculation of the measurement results determined by means of the various measurement methods can be carried out, for example, by means of the “Improving optical measurement uncertainty with combined multitool metrology using a Bayesian approach”, Applied Optics, Vol. 51, No. 25, September 2012, pages 6196-6206 described Bayesian approach, by means of back and forth iteration and / or by means of a parameter separation.
- a common comprehensive model can be used for the various measurement methods.
- the first data set is determined by a theoretical prediction or a calculation with regard to diffraction efficiencies for various parameters ⁇ Pi ⁇ i.
- the second data set comprises weights w (x, y) which are determined by measuring the diffraction efficiencies (referred to above as intensity values) by means of the diffraction measuring stand 60, data processing and a corresponding estimation of the weights w (x, y).
- the third data set comprises weights w (x, y), which are determined by determining measured values with the alternative measurement method, such as the measurement method carried out by means of the scanning probe microscope 84, data processing and corresponding estimation of the weights w (x, y).
- Data processing is usually necessary because the measuring equipment typically does not measure the relevant parameters directly, but only measures related data. For example, the scanning probe microscope 84 measures relative changes in height and absolute etching depths can then be derived from an external calibration sample.
- the diffraction measuring stand 60 measures twice, with and without a diffractive optical element 10 in the beam path; the resulting diffraction efficiency is the quotient of these two measurements.
- the estimation of the weights of the measurement information is carried out in order to correctly take into account the different measurement accuracy of the hybrid use of several measurement devices.
- the scanning probe microscope 84 can be used because it can predict the etching depth particularly precisely, whereas micro-trenches can only be measured very roughly with the scanning probe microscope.
- the weight is chosen to be reciprocal to the measurement error, ie , Where-
- DRi at x, y indicates the location on the diffractive optical element 10 and APider is the measurement error of the i-th parameter.
- the result of the calculation of the three data sets by means of non-linear adaptation using the least squares method are values for the parameters ⁇ Pi ⁇ i as a function of the location on the diffractive optical element 10.
- the adaptation using the least squares method (also known as “Non -linear least square fit ”) is a form of non-linear regression in which the weighted squares of the differences between the individual measurement channels are minimized:
- w (x, y; l, p) stands for the weight at the location (x, y) of the diffractive optical element 10 for the measurement under the wavelength l and the polarization p.
- Im (x, y; l, p) stands analogously with respect to x, y, l, p for the measured intensity in zeroth Diffraction order.
- IR (X, Y; l, p; ⁇ Pi (x, y) ⁇ i) stands for the calculated intensity with variation of the manufacturing parameters Pi of the diffractive optical element 10 at this location.
- the second part represents the use of a second measuring means which, for example, like the scanning probe microscope 84, has direct access to the geometric parameters Pi.
- Pi w (xo, yo; x, y) describes the possibility that such a measurement of the parameters Pi did not take place at the location (x, y) at which the reconstruction was carried out, but at a somewhat more distant test field 18 at position (xo , yo) happened.
- Pi m stands for the measured value of the parameter, while Pi, analogous to occurrence in IR, is a variation parameter of the fit.
- profile flank angle In particular, the case of asymmetrical flank angles, for example left flank 85 ° and right flank 95 (overhang), cannot be detected with respect to the sign (ie whether left or right flank overhangs) in the zeroth diffraction order for reasons of symmetry.
- the sign In the phase, ie for the diffraction order, which is used by the shape measurement structures, the sign is decisive.
- the measurement in the marker can be carried out using a scanning probe microscope, in particular by means of AFM, correctly determine the sign. When viewed together, horizontal and vertical line structures also help to detect a pronounced tilt along the CGH radius.
- test shaft 74 test shaft 74 first focusing lens 76 aperture diaphragm 78 analyzer 80 second Fourier optics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Geometry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019212520.4A DE102019212520A1 (de) | 2019-08-21 | 2019-08-21 | Diffraktives optisches Element für ein Prüfinterferometer |
| PCT/EP2020/072749 WO2021032589A1 (de) | 2019-08-21 | 2020-08-13 | Diffraktives optisches element für ein prüfinterferometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4018154A1 true EP4018154A1 (de) | 2022-06-29 |
Family
ID=72322422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP20764950.0A Pending EP4018154A1 (de) | 2019-08-21 | 2020-08-13 | Diffraktives optisches element für ein prüfinterferometer |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12235097B2 (de) |
| EP (1) | EP4018154A1 (de) |
| CN (1) | CN114502914B (de) |
| DE (1) | DE102019212520A1 (de) |
| WO (1) | WO2021032589A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3502695A1 (de) * | 2017-12-22 | 2019-06-26 | IMEC vzw | Verfahren und vorrichtung zur kardiomyozytenbewertung |
| DE102021211963A1 (de) | 2021-10-25 | 2022-12-29 | Carl Zeiss Smt Gmbh | Verfahren sowie interferometrische Messanordnung zur Bestimmung der Oberflächenform eines Prüflings |
| DE102021213383A1 (de) * | 2021-11-29 | 2023-06-01 | Carl Zeiss Smt Gmbh | Computer-generiertes Hologramm (CGH), sowie Verfahren zur Auslegung eines CGH |
| CN115700407B (zh) * | 2022-11-17 | 2025-11-04 | 湖北久之洋红外系统股份有限公司 | 基于计算全息的离轴三反光学系统共基准装调方法及装置 |
| CN119085479B (zh) * | 2024-11-11 | 2025-03-04 | 浙江大学杭州国际科创中心 | 一种反射式点衍射干涉仪以及面型测量方法 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5671050A (en) * | 1994-11-07 | 1997-09-23 | Zygo Corporation | Method and apparatus for profiling surfaces using diffracative optics |
| JPH0989535A (ja) * | 1995-09-19 | 1997-04-04 | Canon Inc | 面形状計測方法 |
| US6312373B1 (en) * | 1998-09-22 | 2001-11-06 | Nikon Corporation | Method of manufacturing an optical system |
| KR100449711B1 (ko) | 2001-12-21 | 2004-09-22 | 삼성전자주식회사 | 오목면과 홀로그램을 가지는 비구면 측정장치 및 방법 |
| US7804994B2 (en) | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US7352453B2 (en) | 2003-01-17 | 2008-04-01 | Kla-Tencor Technologies Corporation | Method for process optimization and control by comparison between 2 or more measured scatterometry signals |
| US8267981B2 (en) | 2003-06-10 | 2012-09-18 | Depuy Mitek, Inc. | Suture anchor with improved drive head |
| US20060274325A1 (en) * | 2005-05-23 | 2006-12-07 | Carl Zeiss Smt Ag | Method of qualifying a diffraction grating and method of manufacturing an optical element |
| WO2008110239A1 (en) * | 2007-03-15 | 2008-09-18 | Carl Zeiss Smt Ag | Diffractive component, interferometer arrangement, method for qualifying a dual diffraction grating, method of manufacturing an optical element, and interferometric method |
| US7511835B2 (en) * | 2007-04-12 | 2009-03-31 | Tokyo Electron Limited | Optical metrology using a support vector machine with simulated diffraction signal inputs |
| DE102007018048A1 (de) | 2007-04-13 | 2008-10-16 | Michael Schwertner | Verfahren und Anordnung zur optischen Abbildung mit Tiefendiskriminierung |
| WO2009006919A1 (en) * | 2007-07-09 | 2009-01-15 | Carl Zeiss Smt Ag | Method of measuring a deviation an optical surface from a target shape |
| DE102008049751A1 (de) | 2008-10-01 | 2010-04-08 | Carl Zeiss Industrielle Messtechnik Gmbh | Verfahren zum Vermessen eines Werkstücks, Kalibrierverfahren sowie Koordinatenmessgerät |
| US8269981B1 (en) * | 2009-03-30 | 2012-09-18 | Carl Zeiss Smt Gmbh | Method and an apparatus for measuring a deviation of an optical test surface from a target shape |
| KR101124018B1 (ko) * | 2009-12-15 | 2012-03-23 | 인하대학교 산학협력단 | 비구면 렌즈 측정장치 |
| US9116504B2 (en) | 2010-09-07 | 2015-08-25 | Dai Nippon Printing Co., Ltd. | Scanner device and device for measuring three-dimensional shape of object |
| WO2012151288A1 (en) | 2011-05-03 | 2012-11-08 | Applied Materials Israel, Ltd. | Multi-spot collection optics |
| US9311431B2 (en) | 2011-11-03 | 2016-04-12 | Kla-Tencor Corporation | Secondary target design for optical measurements |
| US20130245985A1 (en) | 2012-03-14 | 2013-09-19 | Kla-Tencor Corporation | Calibration Of An Optical Metrology System For Critical Dimension Application Matching |
| NL2011000A (en) | 2012-07-23 | 2014-01-27 | Asml Netherlands Bv | Inspection method and apparatus, lithographic system and device manufacturing method. |
| US9234741B2 (en) * | 2014-04-01 | 2016-01-12 | Dmetrix, Inc. | Interferometric apparatus with computer-generated hologram for measuring non-spherical surfaces |
| WO2016123552A1 (en) | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
| DE102015202676B4 (de) * | 2015-02-13 | 2016-09-22 | Carl Zeiss Smt Gmbh | Interferometrische Messvorrichtung |
| DE102015207002B4 (de) * | 2015-04-17 | 2016-10-27 | Carl Zeiss Smt Gmbh | Verfahren zur Charakterisierung einer diffraktiven optischen Struktur |
| US9995689B2 (en) | 2015-05-22 | 2018-06-12 | Nanometrics Incorporated | Optical metrology using differential fitting |
| DE102015209490A1 (de) | 2015-05-22 | 2016-11-24 | Carl Zeiss Smt Gmbh | Interferometrische Messanordnung |
| EP3944022B1 (de) | 2015-11-05 | 2023-10-11 | Carl Zeiss SMT GmbH | Verfahren und vorrichtung zur charakterisierung eines durch wenigstens einen lithographieschritt strukturierten wafers |
| DE102016213925A1 (de) * | 2016-07-28 | 2018-02-01 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers |
| DE102015221772A1 (de) | 2015-11-05 | 2017-05-11 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Charakterisierung eines durch wenigstens einen Lithographieschritt strukturierten Wafers |
| CN110462523B (zh) | 2017-03-23 | 2022-02-11 | Asml荷兰有限公司 | 结构的不对称性监视 |
| FR3064760B1 (fr) * | 2017-03-28 | 2019-08-16 | Office National D'etudes Et De Recherches Aerospatiales | Interferometre holographique numerique a deux faisceaux de reference pour analyser un milieu transparent |
| DE102018200568A1 (de) * | 2018-01-15 | 2018-03-01 | Carl Zeiss Smt Gmbh | Verfahren zum Kalibrieren eines zur Charakterisierung einer diffraktiven Struktur bestimmten Beugungsmessstandes |
-
2019
- 2019-08-21 DE DE102019212520.4A patent/DE102019212520A1/de active Pending
-
2020
- 2020-08-13 EP EP20764950.0A patent/EP4018154A1/de active Pending
- 2020-08-13 WO PCT/EP2020/072749 patent/WO2021032589A1/de not_active Ceased
- 2020-08-13 CN CN202080068030.XA patent/CN114502914B/zh active Active
-
2022
- 2022-02-18 US US17/675,516 patent/US12235097B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114502914B (zh) | 2025-04-29 |
| US20220170735A1 (en) | 2022-06-02 |
| US12235097B2 (en) | 2025-02-25 |
| DE102019212520A1 (de) | 2021-02-25 |
| CN114502914A (zh) | 2022-05-13 |
| WO2021032589A1 (de) | 2021-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP4018154A1 (de) | Diffraktives optisches element für ein prüfinterferometer | |
| EP3256835B1 (de) | Prüfvorrichtung sowie verfahren zum prüfen eines spiegels | |
| DE102017205629B4 (de) | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich | |
| DE102009019140B4 (de) | Verfahren zum Kalibrieren einer Positionsmessvorrichtung und Verfahren zum Vermessen einer Maske | |
| WO2008012091A2 (de) | Verfahren und vorrichtung zum bestimmen einer abweichung einer tatsächlichen form von einer sollform einer optischen oberfläche | |
| DE102011083774B4 (de) | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern | |
| DE102017212848A1 (de) | Verfahren und Vorrichtung zum Kompensieren von Defekten eines Maskenrohlings | |
| DE102016223967A1 (de) | Systeme und Verfahren zum Charakterisieren einer verfahrensinduzierten Waferform für die Prozesskontrolle unter Verwendung von CGS-Interferometrie | |
| DE102016212477A1 (de) | Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems | |
| DE102018209175B4 (de) | Computer-generiertes Hologramm (CGH), interferometrische Prüfanordnung, sowie Verfahren zur Charakterisierung der Oberflächenform eines optischen Elements | |
| DE102011005881A1 (de) | Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie | |
| WO2019101419A1 (de) | Verfahren und vorrichtung zur kalibrierung einer diffraktiven messstruktur | |
| DE102010038748A1 (de) | Verfahren zur Herstellung eines Spiegels mit wenigstens zwei Spiegelflächen, Spiegel einer Projektionsbelichtungsanlage der Mikrolithographie und Projektionsbelichtungsanlage | |
| DE102007000981A1 (de) | Vorrichtung und Verfahren zum Vermessen von Strukturen auf einer Maske und zur Berechnung der aus den Strukturen resultierenden Strukturen in einem Photoresist | |
| DE2758149C2 (de) | Interferometrisches Verfahren mit λ /4-Auflösung zur Abstands-, Dicken- und/oder Ebenheitsmessung | |
| DE102016204535A1 (de) | Messmikroskop zur Vermessung von Masken für lithographische Verfahren sowie Messverfahren und Kalibrierverfahren hierfür | |
| DE102020207946A1 (de) | Messvorrichtung zur interferometrischen Bestimmung einer Oberflächenform | |
| DE102011005826A1 (de) | Optische Vorrichtung | |
| DE102018202637A1 (de) | Verfahren zur Bestimmung einer Fokuslage einer Lithographie-Maske und Metrologiesystem zur Durchführung eines derartigen Verfahrens | |
| DE102013211403A1 (de) | Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske | |
| DE102019208029A1 (de) | Messvorrichtung zur interferometrischen Bestimmung einer Form einer optischen Oberfläche eines Testobjekts | |
| DE102020208883B4 (de) | Verfahren und Computerprogramm zur Reparatur einer Maske für die Lithographie | |
| DE102007021953B4 (de) | Interferometrische Messvorrichtung zum Vermessen einer Oberfläche eines Prüflings | |
| DE102021200109A1 (de) | Verfahren zur flächenhaften Bestimmung einer Karte wenigstens eines Strukturpara-meters einer strukturierten Oberfläche eines diffraktiven optischen Elements | |
| DE102023203731A1 (de) | Vorrichtung und Verfahren zur Überprüfung eines Bauteils sowie Lithografiesystem |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
| PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
| 17P | Request for examination filed |
Effective date: 20220318 |
|
| AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
| DAV | Request for validation of the european patent (deleted) | ||
| DAX | Request for extension of the european patent (deleted) | ||
| STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
| 17Q | First examination report despatched |
Effective date: 20231113 |