EP4000092A1 - Optoelektronische vorrichtung, in der die pixel leuchtdioden enthalten, die mehrere farben emittieren, und herstellungsverfahren - Google Patents
Optoelektronische vorrichtung, in der die pixel leuchtdioden enthalten, die mehrere farben emittieren, und herstellungsverfahrenInfo
- Publication number
- EP4000092A1 EP4000092A1 EP20747046.9A EP20747046A EP4000092A1 EP 4000092 A1 EP4000092 A1 EP 4000092A1 EP 20747046 A EP20747046 A EP 20747046A EP 4000092 A1 EP4000092 A1 EP 4000092A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- primary
- semiconductor portion
- layer
- sub
- tertiary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000003086 colorant Substances 0.000 title description 11
- 230000004308 accommodation Effects 0.000 claims abstract description 187
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000004065 semiconductor Substances 0.000 claims description 354
- 230000005855 radiation Effects 0.000 claims description 101
- 230000015572 biosynthetic process Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 24
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000846 In alloy Inorganic materials 0.000 claims description 5
- 229910001199 N alloy Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 239
- 150000001875 compounds Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010292 electrical insulation Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- -1 hafnium nitride Chemical class 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910020056 Mg3N2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
Definitions
- the present invention relates to an optoelectronic device comprising a plurality of pixels each comprising at least one primary sub-pixel comprising at least one primary light-emitting diode capable of emitting a first light radiation having substantially a first wavelength and formed on a support face d 'a substrate.
- the invention also relates to a method of manufacturing an optoelectronic device comprising a plurality of pixels, in which the formation of said plurality of pixels comprises the implementation of a first phase consisting, for each pixel, in forming at least one primary sub-pixel comprising at least one primary light-emitting diode capable of emitting a first light radiation having substantially a first wavelength and formed on a support face of a substrate.
- the invention finds an application in particular in display screens or image projection systems.
- optical device is meant here a device suitable for converting an electrical signal into electromagnetic radiation to be emitted, in particular light.
- optoelectronic devices comprising light-emitting diodes, also known by the acronym LED for “Light Emitting Diode” according to the established English terminology, formed on a support face of a substrate.
- each light-emitting diode comprises an active material that may or may not use quantum wells, a semiconductor portion doped according to a first type of doping to play the role of a P-doped junction and a semiconductor portion doped according to a second type of doping to play the role of junction doped N.
- Each light-emitting diode can be formed on the basis of three-dimensional wire semiconductor micrometric or even nanometric elements, themselves at least partially obtained by growth by epitaxy or by organometallic vapor deposition (MOCVD) or by plasma-assisted deposition (PECVD). ).
- Light-emitting diodes are typically formed based on a semiconductor material comprising for example elements from column III and from column V of the periodic table, such as a III-V compound, in particular gallium nitride (GaN) , indium gallium nitride (InGaN) or aluminum gallium nitride (AIGaN).
- a III-V compound in particular gallium nitride (GaN) , indium gallium nitride (InGaN) or aluminum gallium nitride (AIGaN).
- the architecture of three-dimensional light-emitting diodes may be of the “core-shell” type with a first semiconductor portion doped according to a first type of doping and of wire form, an active semiconductor portion covering this first part and a second semiconductor portion doped according to a second. type of doping and covering the active portion.
- the first portion is considered to be the “heart” and the active portion and the second doped portion form the “shell” since they surround the first portion.
- a second known architecture is called an “axial structure”.
- the first semiconductor portion doped according to a first type of doping, the active portion and the second semiconductor portion doped according to a second type of doping are stacked in whole or in part along the longitudinal axis of the light-emitting diode.
- optoelectronic devices comprising a matrix of light emitting diodes having a certain emission surface through which the light radiation emitted by the light emitting diodes is transmitted.
- Such optoelectronic devices can in particular be used in the constitution of display screens or image projection systems, where the matrix of light-emitting diodes in fact defines a matrix of luminous pixels where each pixel traditionally comprises at least one sub- pixel to generate each color, the subpixel itself containing at least one light emitting diode.
- a given sub-pixel can for example contain up to 100,000 light-emitting diodes.
- the optoelectronic device can be organized into independent pixels.
- each pixel conventionally comprises:
- At least one sub-pixel formed of at least one light-emitting diode capable of directly generating, or of transmitting via a suitable color converter, red light.
- each pixel comprises at least one light-emitting diode capable of emitting blue light, at least one light-emitting diode capable of emitting green light and at least one light-emitting diode capable of emitting red light.
- the light-emitting diodes which are able to emit light in a given color are manufactured on the same substrate, this being repeated separately for the three colors. Then each substrate is cut in order to delimit individual devices. Each pixel is then obtained by mechanical reconstruction in order to associate such individual devices so as to have the three colors.
- Another solution consists in providing that the light-emitting diodes are adapted to emit light in blue colors. So that the light pixel can emit in green colors and / or in red colors, the latter can include photoluminescent pads playing the role of color converter. These photoluminescent spots are usually formed from a suitable binding matrix.
- each pixel can directly generate lights of different colors, in particular blue, green and red, and in particular from GaN, InGaN or AIGaN type materials which do not require no change in training technique from one sub-pixel to another and from one pixel to another.
- Another major difficulty is that the diameter of the light-emitting diodes influences the color of the light radiation emitted by them.
- a light emitting diode emitting red or green light will generally have a larger diameter than a light emitting diode emitting blue light.
- Another difficulty is that light-emitting diodes of small diameter have significant structural defects at their top end, in particular due to atomic mesh disagreements.
- the light intensity emitted by nanoscale wire light emitting diodes also decreases drastically as the size of wire light emitting diodes is reduced.
- the object of the present invention is to respond to all or part of the problems presented above.
- one goal is to provide a solution meeting at least one of the following objectives:
- an optoelectronic device comprising a plurality of pixels each comprising at least one primary sub-pixel comprising at least one primary light-emitting diode capable of emitting a first light radiation having substantially a first wavelength and formed on a support face of a substrate, each primary light-emitting diode comprising:
- first primary semiconductor portion electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and P-type doping, the first primary semiconductor portion having a generally wire shape elongated along a longitudinal axis A extending in a first direction a generally perpendicular to the support face of the substrate, the first primary semiconductor portion comprising a top end a opposite to a proximal end of the first primary semiconductor portion turned towards the support face of the substrate,
- At least one primary mesh parameter accommodation layer arranged at least on and in contact with the top end a of the first primary semiconductor portion
- a second primary active semiconductor portion formed by epitaxial growth from the primary lattice parameter accommodation layer, the second primary active semiconductor portion being arranged at least on, and in contact with, the lattice parameter accommodation layer primary,
- a third primary semiconductor portion electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping and arranged at least on, and in contact with, the second primary active semiconductor portion,
- the second primary active semiconductor portion is configured so as to emit said first light radiation when at least one of the first and second electrodes is energized
- the primary lattice parameter accommodation layer has, at least at its interface with the second primary active semiconductor portion, a first primary lattice parameter difference of between 2.12% and 0.93% with respect to the second semiconductor portion primary active.
- the primary mesh parameter accommodation layer has, at least at its interface with the first primary semiconductor portion, a second primary mesh parameter difference of between 1.07% and 2.17% relative to to the first primary semiconductor portion.
- the primary mesh parameter accommodation layer comprises at least one primary mesh parameter accommodation sublayer of a first nature configured such that the first light radiation capable of be emitted by the second primary active semiconductor portion formed on, and in contact with, said primary sub-layer for accommodating lattice parameters of a first nature is generally blue in color by being made up of light rays having essentially lengths d 'waves between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm.
- the primary sub-layer for accommodating lattice parameters of a first nature has, at least at its interface with the first primary semiconductor portion, a third difference in primary lattice parameters of between 1.07% and 0.65% with respect to the lattice parameters of the first primary semiconductor portion.
- the primary sub-layer for accommodating lattice parameters of a first nature contains a first alloy of aluminum, gallium, indium and nitrogen, in particular containing a proportion of gallium decreasing in the first direction and in a direction opposite to the top end of the first primary semiconductor portion.
- the primary mesh parameter accommodation layer comprises at least one primary mesh parameter accommodation sublayer of a second nature configured so that the first light radiation capable of be emitted by the second primary active semiconductor portion formed on, and in contact with, said primary sub-layer for accommodating lattice parameters of a second nature is generally green in color by being made up of light rays having essentially lengths d 'waves between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm.
- the primary sub-layer for accommodating mesh parameters of a second nature is arranged at least on, and in contact with, the primary sub-layer for accommodating mesh parameters.
- the primary sub-layer for accommodating lattice parameters of a second nature contains a second alloy of gallium, indium and nitrogen, in particular containing a decreasing proportion of indium according to the first direction and in the direction opposite to the top end of the first primary semiconductor portion.
- the primary mesh parameter accommodation layer comprises at least one primary mesh parameter accommodation sublayer of a third nature configured so that the first light radiation capable of be emitted by the second primary active semiconductor portion formed on, and in contact with, said primary sub-layer for accommodating lattice parameters of a third nature is generally red in color, consisting of light rays having essentially lengths d 'waves between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.
- the primary sub-layer for accommodating lattice parameters of a third nature is arranged at least on, and in contact with, the primary sub-layer for accommodating lattice parameters d 'a second nature and in which the primary sub-layer for accommodating lattice parameters of a third nature has, at least at its interface with the primary sub-layer for accommodating lattice parameters of a second nature, a fifth difference in primary mesh parameters of between 1.25% and 1.75% with respect to the mesh parameters of the primary sub-layer for accommodating mesh parameters of a second nature.
- the primary sub-layer for accommodating mesh parameters of a third nature contains a third alloy of gallium, indium and nitrogen.
- each pixel comprises at least one secondary sub-pixel comprising at least one secondary light-emitting diode capable of emitting a second light radiation having substantially a second wavelength different from the first. wavelength and formed on the support face of the substrate, each secondary light-emitting diode comprising:
- the first secondary semiconductor portion offset with respect to the first primary semiconductor portion in a general plane parallel to the support face, electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and doping of type P, the first secondary semiconductor portion having a generally wire shape elongated along a longitudinal axis A extending in the first direction, the first secondary semiconductor portion comprising a top end opposite to a proximal end of the first secondary semiconductor portion facing towards the support face of the substrate,
- At least one secondary lattice parameter accommodation layer arranged at least on, and in contact with, the top end of the first secondary semiconductor portion
- a second secondary active semiconductor portion formed by epitaxial growth from the secondary lattice parameter accommodation layer, the second secondary active semiconductor portion being arranged at least on, and in contact with, the lattice parameter accommodation layer secondary, a third secondary semiconductor portion electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping and arranged at least on, and in contact with, the second secondary active semiconductor portion,
- the second secondary active semiconductor portion is configured so as to emit said second light radiation when at least one of the first and second electrodes is energized
- the secondary lattice parameter accommodation layer exhibits, at least at its interface with the second active secondary semiconductor portion, a first secondary lattice parameter difference of between 3.51% and 0.30% with respect to the second semiconductor portion secondary active.
- said at least one secondary mesh parameter accommodation layer comprises at least one of the following sublayers:
- a secondary sub-layer for accommodating lattice parameters of a first nature configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion formed on, and in contact with, said secondary sub-layer of accommodation of mesh parameters of a first nature is generally blue in color by being made up of light rays having essentially wavelengths between the first minimum value equal at 440 nm and the first maximum value equal to 500 nm,
- a secondary sub-layer for accommodating lattice parameters of a second nature configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion formed on, and in contact with, said secondary sub-layer of accommodation of mesh parameters of a second nature is generally green in color, consisting of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm,
- a secondary sub-layer for accommodating mesh parameters of a third nature configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion formed on and in contact with said secondary sub-layer of accommodation of mesh parameters of a third nature is generally red in color, consisting of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- each pixel comprises at least one tertiary sub-pixel comprising at least one secondary light-emitting diode capable of emitting a third light radiation having substantially a third wavelength different from the first wavelength and of the second wavelength and formed on the support face of the substrate, each tertiary light-emitting diode comprising:
- first tertiary semiconductor portion offset with respect to the first primary semiconductor portion and with respect to the first secondary semiconductor portion in a general plane parallel to the support face electrically connected to a first electrode and doped according to a first type of doping chosen from among an N-type doping and a P-type doping, the first tertiary semiconductor portion having a generally wire shape elongated along a longitudinal axis A extending in the first direction, the first tertiary semiconductor portion having a top end opposite a proximal end of the first tertiary semiconductor portion facing the substrate support face,
- At least one tertiary mesh parameter accommodation layer arranged at least on, and in contact with, the top end of the first tertiary semiconductor portion
- a second tertiary active semiconductor portion formed by epitaxial growth from the tertiary lattice parameter accommodation layer, the second tertiary active semiconductor portion being arranged at least on, and in contact with, the parameter accommodation layer of tertiary mesh,
- a third tertiary semiconductor portion electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping and arranged at least on, and in contact with, the second active tertiary semiconductor portion,
- the second tertiary active semiconductor portion is configured so as to emit said third light radiation when at least one of the first and second electrodes is energized
- the tertiary lattice parameter accommodation layer has, at least at its interface with the second active tertiary semiconductor portion, a first tertiary lattice parameter difference of between 4.39% and 1.21% relative to the second semiconductor portion active tertiary.
- said at least one tertiary mesh parameter accommodation layer comprises at least one of the following sublayers:
- a tertiary sub-layer for accommodating lattice parameters of a first nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed on, and in contact with, said tertiary sub-layer of accommodation of lattice parameters of a first nature is generally blue in color, consisting of light rays having essentially wavelengths between the first minimum value equal to 440 nm and the first maximum value equal to 500 nm,
- a tertiary sub-layer for accommodating lattice parameters of a second nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed on, and in contact with, said tertiary sub-layer of accommodation of mesh parameters of a second nature is globally green in color by being made up of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm,
- a tertiary sub-layer for accommodating mesh parameters of a third nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed on, and in contact with, said tertiary sub-layer of accommodation of lattice parameters of a third nature is generally red in color, consisting of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- the invention also relates to the implementation of a method of manufacturing an optoelectronic device comprising a plurality of pixels, wherein forming said plurality of pixels comprises performing a first phase consisting, for each pixel, in forming at least one primary sub-pixel comprising at least one primary light-emitting diode capable of emitting a first light radiation having substantially a first wavelength and formed on a support face of a substrate, the first phase comprising the steps following:
- step a forming at least one accommodation layer of primary mesh parameters at least on, and in contact with, the top end of the first primary semiconductor portion formed in step a;
- step b forming a second primary active semiconductor portion by epitaxial growth from the primary lattice parameter accommodation layer formed in step b, the second primary active semiconductor portion being arranged on, and in contact with, the accommodation layer of primary mesh parameters; d) formation of a third primary semiconductor portion intended to be electrically connected to a second electrode and doped according to a second type doping opposite to the first type of doping, at least on, and in contact with, the second primary active semiconductor portion;
- the second primary active semiconductor portion formed in step c being configured so as to emit said first light radiation when at least one of the first and second electrodes is energized;
- the primary mesh parameter accommodation layer formed in step b) has, at least at its interface with the second primary active semiconductor portion formed in step c), a first primary mesh parameter difference between 2.12 % and 0.93% with respect to the second primary active semiconductor portion.
- step b) comprises at least one of the following sub-steps:
- step bl formation of at least one primary sub-layer for accommodating lattice parameters of a first nature configured so that the first light radiation capable of being emitted by the second primary active semiconductor portion formed in step c ) on, and in contact with, said primary sub-layer for accommodating lattice parameters of a first nature is generally blue in color by being formed of light rays having essentially wavelengths between a first minimum value equal at 440 nm and a first maximum value equal to 500 nm;
- step b2) formation of a primary second-nature mesh parameter accommodation sublayer, the second-nature mesh parameter accommodation primary sublayer configured so that the first light radiation capable of being emitted by the second primary active semiconductor portion formed in step c) on, and in contact with, said primary sub-layer for accommodating lattice parameters of a second nature is generally green in color, consisting of light rays essentially having wavelengths between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm;
- step b3) forming at least one primary sub-layer for accommodating lattice parameters of a third nature configured such that the first light radiation capable of being emitted by the second primary active semiconductor portion formed in step c ) on, and in contact with, said primary sub-layer for accommodating mesh parameters of a third nature, namely generally red in color, consisting of light rays having essentially wavelengths between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.
- the formation of said plurality of pixels comprises the implementation of a second phase essentially simultaneously with the first phase and consisting, for each pixel, in forming at least one secondary sub-pixel comprising at least a secondary light-emitting diode capable of emitting a second light radiation having substantially a second wavelength different from the first wavelength and formed on the support face of the substrate, the second phase comprising the following steps:
- step e) forming, on the support face of the substrate, a first secondary semiconductor portion offset with respect to the first primary semiconductor portion in a general plane parallel to the support face, intended to be electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and P-type doping, the first secondary semiconductor portion having a generally wire shape elongated along a longitudinal axis A extending in the first direction, the first secondary semiconductor portion comprising an end top opposite to a proximal end of the first secondary semiconductor portion facing the support face of the substrate, step e) being carried out at the same time and with the same technique as step a);
- step g) forming a second secondary active semiconductor portion by epitaxial growth from the secondary lattice parameter accommodation layer formed in step f), the second secondary active semiconductor portion being arranged on, and in contact with, the secondary mesh parameter accommodation layer, step g) being carried out at the same time and with the same technique as step c);
- a third secondary semiconductor portion intended to be electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping, at least on, and in contact with, the second secondary active semiconductor portion;
- the second secondary active semiconductor portion formed in step g) being configured to emit said second light radiation when at least one of the first and second electrodes is energized;
- the secondary lattice parameter accommodation layer being formed in step f) has, at least at its interface with the second secondary active semiconductor portion formed in step g), a first difference in secondary lattice parameters of between 3.51% and 0.30% with respect to the second secondary active semiconductor portion.
- step f) comprises at least one of the following sub-steps:
- step fl formation of at least one secondary sub-layer for accommodating lattice parameters of a first nature configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion formed in step g ) on, and in contact with, said secondary sub-layer of accommodation of mesh parameters of a first nature is generally blue in color by being made up of light rays having essentially wavelengths between the first minimum value equal at 440 nm and the first maximum value equal to 500 nm, the secondary lattice parameter accommodation sublayer of a first nature being similar in composition and thickness to the primary lattice parameter accommodation sublayer of a first nature and step f1) being carried out at the same time and by the same technique as step b1);
- step f2) formation of a secondary sub-layer for accommodating lattice parameters of a second nature configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion formed in step g) on , and in contact with, said secondary sub-layer for accommodating lattice parameters of a second nature is generally green in color, consisting of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm, the secondary sub-layer of accommodation of mesh parameters of a second nature being similar in composition and thickness to the primary sub-layer of accommodation of mesh parameters of a second nature and step f2) being carried out at the same time and by the same technique as step b2);
- step f3) formation of at least one secondary sub-layer for accommodating mesh parameters of a third nature configured so that the second light radiation capable of being emitted by the second portion secondary active semiconductor formed in step g) on, and in contact with, said secondary sub-layer for accommodating lattice parameters of a third nature is generally red in color, consisting of light rays having essentially lengths d 'waves between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm, the secondary sub-layer for accommodating lattice parameters of a third nature being similar in composition and thickness to the sub-layer primary layer for accommodation of mesh parameters of a third nature and step f3) being carried out at the same time and by the same technique as step b3).
- the formation of said plurality of pixels comprises the implementation of a third phase essentially simultaneously with the first phase and the second phase and consisting, for each pixel, in forming at least one sub- tertiary pixel comprising at least one tertiary light-emitting diode capable of emitting a third light radiation having substantially a third wavelength different from the first wavelength and from the second wavelength and formed on the support face of the substrate, the third phase comprising the following stages:
- step i) formation, on the support face of the substrate, of a first tertiary semiconductor portion offset with respect to the first primary semiconductor portion and with respect to the first secondary semiconductor portion in a general plane parallel to the support face, intended to be connected electrically to a first electrode and doped according to a first type of doping chosen from N-type doping and P-type doping, the first tertiary semiconductor portion having a generally wire shape elongated along a longitudinal axis A extending in the first direction , the first tertiary semiconductor portion comprising a top end opposite to a proximal end of the first tertiary semiconductor portion facing the support face of the substrate, step i) being carried out at the same time and with the same technique as step a ) and that step e);
- step i) forming at least one tertiary lattice parameter accommodation layer at least on, and in contact with, the top end of the first tertiary semiconductor portion formed in step i);
- step k) formation of a second tertiary active semiconductor portion by epitaxial growth from the tertiary lattice parameter accommodation layer formed in step j), the second tertiary active semiconductor portion being arranged on, and in contact with, the accommodation layer of tertiary mesh parameters, step k) being carried out at the same time and with the same technique as step c) and as step g);
- the second tertiary active semiconductor portion formed in step k) being configured so as to emit said third light radiation when at least one of the first and second electrodes is energized;
- the tertiary lattice parameter accommodation layer being formed in step j) has, at least at its interface with the second tertiary active semiconductor portion formed in step k), a first difference in tertiary lattice parameters of between 4.39% and 1.21% with respect to the second secondary active semiconductor portion.
- step j) comprises at least one of the following sub-steps:
- tertiary sub-layer for accommodating lattice parameters of a first nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed in step k ) on, and in contact with, said tertiary sub-layer of accommodation of mesh parameters of a first nature is generally blue in color by being made up of light rays having essentially wavelengths between the first minimum value equal to at 440 nm and the first maximum value equal to 500 nm, the tertiary lattice parameter accommodation sublayer of a first nature being similar in composition and thickness to the primary lattice parameter accommodation sublayer of a first nature and to the secondary sub-layer of accommodation of mesh parameters of a first nature and step jl) being carried out at the same time and by the same technique as e step b1) and that step fi);
- a tertiary sub-layer for accommodating lattice parameters of a second nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed in step k) on , and in contact with, said tertiary sub-layer for accommodating lattice parameters of a second nature is generally green in color, consisting of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm, the tertiary sub-layer for accommodating mesh parameters of a second nature being similar in composition and in thickness to the primary sub-layer of accommodation of mesh parameters of a second nature and the secondary sub-layer of accommodation of mesh parameters of a second nature and step j2) being carried out at the same time and by the same technique as step b2) and as step f2);
- tertiary sub-layer for accommodating lattice parameters of a third nature configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion formed in step k ) on, and in contact with, said tertiary sub-layer for accommodating lattice parameters of a third nature is generally red in color, consisting of light rays having essentially wavelengths between the third minimum value equal to at 570 nm and the third maximum value equal to 680 nm, the tertiary lattice parameter accommodation sublayer of a third nature being similar in composition and thickness to the primary lattice parameter accommodation sublayer of a third nature and to the secondary sub-layer of accommodation of mesh parameters of a third nature and step j3) being carried out at the same time and by the same techn ic as step b3) and as step f3).
- FIG. 1 shows a schematic view of a cross section of a light-emitting diode of “heart-shell” type architecture according to a first embodiment of the invention.
- FIG. 2 represents a schematic view of a cross section of a light-emitting diode of the “axial” type according to a first embodiment of the invention.
- FIG. 3 shows a schematic view of a cross section of a light-emitting diode of the “axial” type according to a second embodiment of the invention.
- FIG. 4 shows a schematic view of a cross section of a light-emitting diode of the “axial” type according to a third embodiment of the invention.
- FIG. 5 represents a schematic view of a cross section of a light-emitting diode of the “axial” type according to a fourth embodiment of the invention.
- FIG. 6 represents a schematic view of a step of a manufacturing process according to the invention of a primary sub-pixel comprising a primary light-emitting diode, of a secondary sub-pixel comprising a secondary light-emitting diode and of a sub-pixel.
- -tertiary pixel including a tertiary light emitting diode, seen in cross section.
- FIG. 7 represents a schematic view of an additional step of a method of manufacturing according to the invention of a primary sub-pixel comprising a primary light-emitting diode, a secondary sub-pixel comprising a secondary light-emitting diode and a Tertiary subpixel comprising a tertiary light emitting diode, viewed in cross section.
- FIG. 8 represents a schematic view of another step of a method of manufacturing according to the invention of a primary sub-pixel comprising a primary light-emitting diode, a secondary sub-pixel comprising a secondary light-emitting diode and a Tertiary subpixel comprising a tertiary light emitting diode, viewed in cross section.
- FIG. 9 represents a schematic view of an additional step of a method of manufacturing according to the invention of a primary sub-pixel comprising a primary light-emitting diode, of a secondary sub-pixel comprising a secondary light-emitting diode and of a Tertiary subpixel comprising a tertiary light emitting diode, viewed in cross section.
- each of the accompanying figures represents only an assembly comprising a few light emitting diodes 111, 121, 131.
- the number of light emitting diodes per sub-pixel 11a, 11b, 11c and the number of pixels are not, however, limited.
- the invention relates firstly to an optoelectronic device 10, comprising a plurality of pixels 11 each comprising at least one primary sub-pixel 11a comprising at least one primary light-emitting diode 111 capable of emitting a first light radiation having substantially a first length d wave and formed on a support face 110 of a substrate 101.
- a particularly targeted application is the supply of an image display screen or of an image projection device.
- the manufacturing methods can relate to other applications, in particular the detection or measurement of electromagnetic radiation or else photovoltaic applications.
- the optoelectronic device 10 is obtained starting from a substrate 101, having a support face 110, which is an element common to the various embodiments.
- the substrate 101 is constituted, for example, by a stack of a monolithic layer (not shown), of a lower electrode layer (not shown) which can be a seed layer or so-called conductive nucleation layer and of a first layer. electrical insulation (not shown).
- a monolithic layer not shown
- a lower electrode layer not shown
- electrical insulation not shown
- the support face 110 of the substrate 101 is constituted for example by the exposed face of said first electrical insulation layer or of the nucleation layer.
- the monolithic layer can be formed in a semiconductor material doped or not, for example I ⁇ I2O3 or silicon or germanium, and more particularly monocrystalline silicon. It can also be formed from sapphire or even from a III-V semiconductor material, for example GaN. It may alternatively be a silicon-on-insulator or “SOI” type substrate for “Silicon On Insulator” according to the established English terminology. Alternatively, the monolithic layer can be formed from an electrically insulating material.
- the lower electrode layer can serve as a seed layer for the growth of light emitting diode portions.
- the electrode layer lower can be continuous or discontinuous.
- the material composing the lower electrode layer can be a nitride, a carbide or a boride of a transition metal from column IV, V or VI of the Periodic Table of the Elements or a combination of these compounds.
- the layer of the lower electrode can be made of aluminum nitride, aluminum oxide, boron, boron nitride, titanium, titanium nitride, tantalum, tantalum nitride.
- the lower electrode layer can be doped and of the same type of conductivity as that of the semiconductor elements intended to grow, and have a thickness for example between 1 nm and 200 nm, preferably between 10 nm and 50 nm.
- the lower electrode layer may be composed of an alloy or of a stack of at least one material mentioned in the list above.
- Said first electrically insulating layer may include a first intermediate insulating layer which covers said lower electrode layer. It forms a growth mask allowing the epitaxial growth, for example, of the various light-emitting diodes 111, 121, 131 from through openings opening locally on the surfaces of the lower electrode layer. Said first electrical insulation layer also participates in providing electrical insulation between the first lower electrodes (not shown) and the second upper electrodes (not shown).
- the first intermediate insulating layer is made of at least one dielectric material (s) such as, for example, a silicon oxide (for example S1O 2 or SiON) or a silicon nitride (for example S1 3 N 4 or SiN) or silicon oxynitride, an aluminum oxide (e.g.
- the thickness of the first intermediate insulating layer may be between 5 nm and 1 ⁇ m, preferably between 20 nm and 500 nm, for example equal to approximately 100 nm.
- Said first layer of electrically insulating material may further comprise a second electrically intermediate insulating layer (not shown) which covers the first lower electrodes and participates in providing electrical insulation between the first lower electrodes and the second upper electrodes.
- Said second electrically intermediate insulating layer may also cover the growth mask formed by the first layer intermediate insulator.
- the second intermediate insulating layer can be made of a dielectric material identical to or different from that of the growth mask, such as, for example, a silicon oxide (for example S1O 2 ) or a silicon nitride (for example S1 3 N 4 or SiN), or even a silicon oxynitride, an aluminum oxide (for example Al 2 O 3 ) or a hafnium oxide (for example HfCh).
- the thickness of the second intermediate insulating layer may be between 5 nm and 1 ⁇ m, preferably between 20 nm and 500 nm, for example equal to approximately 100 nm.
- At least one light-emitting diode 111 capable of emitting a first light radiation having substantially a first wavelength is formed on the substrate 101.
- Each light-emitting diode 111 has a substantially wire shape elongated along a longitudinal axis A extending in a first direction 111a generally perpendicular to the support face 110 of the substrate 101.
- Each light emitting diode 111 comprises at least a first primary semiconductor portion 112 electrically connected to a first electrode.
- each light-emitting diode is connected to a first lower electrode, formed in the substrate (not shown and which may be the seed layer), continuous or not.
- the first primary semiconductor portion 112 is doped according to a first type of doping chosen from N-type doping and P-type doping.
- the first primary semiconductor portion 112 has a generally wire shape elongated along the longitudinal axis A extending along a first direction 111a generally perpendicular to the support face 110 of the substrate 101.
- the first primary semiconductor portion 112 is therefore of three-dimensional shape, according to micrometric or nanometric dimensions.
- the first primary semiconductor portion 112 has a substantially wire, conical or frustoconical shape.
- the terms “three-dimensional” or “wireframe” or “frustoconical” or “conical” are equivalent.
- the first primary semiconductor portion 112 includes a top end 112a opposite to a proximal end of the first primary semiconductor portion 112 facing the support face 110 of the substrate 101.
- the first primary semiconductor portion 112 may be, at least in part, formed from group IV semiconductor materials such as silicon or germanium or else mainly comprising a III-V compound, for example III-N compounds.
- group IV semiconductor materials such as silicon or germanium or else mainly comprising a III-V compound, for example III-N compounds.
- Group III include gallium, indium or aluminum.
- III-N compounds are GaN, AIN, InGaN or AlInGaN.
- Other elements of group V can also be used, for example, phosphorus, arsenic or antimony.
- the elements in compound III-V can be combined with different mole fractions.
- the first primary semiconductor portion 112 can equally well be formed from semiconductor materials predominantly comprising a II-VI compound.
- the dopant may be chosen, in the case of a III-V compound, from the group comprising a type P dopant of group II, for example magnesium, zinc, cadmium or mercury, a dopant of the P type of group IV, for example carbon, or an N-type dopant of group IV, for example silicon, germanium, selenium, sulfur, terbium or tin.
- a type P dopant of group II for example magnesium, zinc, cadmium or mercury
- a dopant of the P type of group IV for example carbon
- an N-type dopant of group IV for example silicon, germanium, selenium, sulfur, terbium or tin.
- the cross section of the first primary semiconductor portion 112 may have different shapes such as, for example, an oval, circular or polygonal shape (for example square, rectangular, triangular, hexagonal).
- the various layers or sublayers making up the light-emitting diodes 111, 121, 131 can be obtained by any technique of a person skilled in the art such as, for example: chemical vapor deposition (CVD) for Chemical Layer Deposition, an atomic layer deposition (ALD) for Atomic Layer Deposition, or physical vapor deposition (PVD) for Physical Vapor Deposition but preferably by epitaxy (for example MBE, MOVPE).
- CVD chemical vapor deposition
- ALD atomic layer deposition
- PVD physical vapor deposition
- epitaxy for example MBE, MOVPE
- each light-emitting diode 111 comprises at least one primary mesh parameter accommodation layer 113 arranged at least on, and in contact with, the top end 112a of the first primary semiconductor portion 112.
- each light-emitting diode 111 comprises at least a second primary active semiconductor portion 114 formed by epitaxial growth from the primary mesh parameter accommodation layer 113.
- This second primary active semiconductor portion 114 is arranged at least on, and in contact with, the primary mesh parameter accommodation layer 113.
- each light emitting diode 111 comprises at least a third primary semiconductor portion 115 electrically connected to a second electrode.
- This third primary semiconductor portion 115 is doped according to a second type of doping opposite to the first type of doping. It is arranged at least on, and in contact with, the second primary active semiconductor portion 114.
- This third primary semiconductor portion 115 is, in one example, identical for at least all the primary and secondary and tertiary light-emitting diodes composing at least one sub. -pixel.
- This third primary semiconductor portion 115 may be formed from group IV semiconductor materials such as silicon or germanium or else mainly comprising a III-V compound, for example III - N compounds. Examples of group III include gallium, indium or aluminum.
- III-N compounds are GaN, AIN, InGaN or AlInGaN.
- Other elements of group V can also be used, for example, phosphorus, arsenic or antimony.
- the elements in compound III-V can be combined with different mole fractions.
- the first primary semiconductor portion 112 can equally well be formed from semiconductor materials predominantly comprising a II-VI compound.
- the dopant may be chosen, in the case of a III-V compound, from the group comprising a type P dopant of group II, for example magnesium, zinc, cadmium or mercury, a dopant of the P type of group IV, for example carbon, or an N-type dopant of group IV, for example silicon, germanium, selenium, sulfur, terbium or tin.
- a type P dopant of group II for example magnesium, zinc, cadmium or mercury
- a dopant of the P type of group IV for example carbon
- an N-type dopant of group IV for example silicon, germanium, selenium, sulfur, terbium or tin.
- the second electrode is preferably transparent and can be formed in one example of a transparent conductive oxide such as doped tin oxide or even doped zinc oxide covered or not partially covered by a metal electrode layer.
- the second primary active semiconductor portion 114 is configured so as to emit said first light radiation when at least one of the first and second electrodes is supplied.
- the color emitted or in other words the wavelength emitted from the second primary active semiconductor portion 114 is in particular dependent on its indium concentration.
- the second primary active semiconductor portion 114 may include means for confining the electric charge carriers, such as single or multiple quantum wells. She consists for example of an alternation of layers of GaN and InGaN having respective thicknesses of 5 to 20 nm (for example 8 nm) and of 1 to 15 nm (for example 2.5 nm).
- the GaN layers can be doped, for example of N or P type.
- the active layer can comprise a single layer of InGaN, for example with a thickness greater than 10 nm.
- the primary lattice parameter accommodation layer 113 has, at least at its interface with the second primary active semiconductor portion 114, a first primary lattice parameter difference of between 2.32% and 0.93% relative to the second active semiconductor portion primary 114.
- the primary lattice parameter accommodation layer 113 thus configured makes it possible to serve as a basis for the epitaxial growth of a second primary active semiconductor portion 114 whose indium concentration will be at least in part determined by the first lattice parameter difference.
- primary of the primary mesh parameter accommodation layer 113 with respect to the second primary active semiconductor portion 114. This is notably due to the general fact that a change in indium concentration in a second primary active semiconductor portion 114 involves a change of lattice parameter of said second primary active semiconductor portion 114.
- the atomic species having lattice parameters too far apart from the lattice parameters of the layer of accommodation of primary mesh parameters 113 will be immediately deso rbés.
- only the alloy forming the second primary active semiconductor portion 114 having the chosen indium concentration will be able to grow and form perennially on the primary lattice parameter accommodation layer 113.
- this makes it possible to obtain second primary active semiconductor portions 114 emitting a wavelength chosen independently of the diameter of the primary light-emitting diodes 111.
- this also makes it possible to obtain in the same reactor, in a single phase, second active semiconductor portions having different indium contents and therefore emitting at different wavelengths.
- the primary mesh parameter accommodation layer 113 is formed in a material having a mesh parameter difference of between 2% and 2.5% relative to a second primary active semiconductor portion 114, a proportion of which is indium is between 13% and 20%.
- a second primary active semiconductor portion 114 thus obtained is capable of emitting a first radiation of between 440 and 500 nm and corresponding to light radiation generally blue in color.
- the primary lattice parameter accommodation layer 113 is formed in a material having a lattice parameter difference of between 1.5% and 2% relative to a second primary active semiconductor portion 114, a proportion of which is indium is between 20% and 27%.
- a second primary active semiconductor portion 114 obtained by epitaxy from this primary mesh parameter accommodation layer 113 is able to emit radiation of between 500 and 570 nm and corresponding to light radiation generally green in color.
- the primary lattice parameter accommodation layer 113 is formed in a material having a lattice parameter difference of between 1% and 1.5% relative to a second primary active semiconductor portion 114, a proportion of which is indium is between 27% and 40%.
- a second primary active semiconductor portion 114 obtained by epitaxy from this primary lattice parameter accommodation layer 113 is capable of emitting radiation of between 570 and 680 nm and corresponding to light radiation that is generally red in color.
- the primary lattice parameter accommodation layer 113 may have, in one example, at least at its interface with the first primary semiconductor portion 112, a second primary lattice parameter difference of between 1.07% and 2.17% relative to the first primary semiconductor portion 112.
- the second primary lattice parameter difference of 1.07% corresponds to a lattice parameter difference between GaN and Alo . 1Gao.9N
- the second primary mesh parameter difference of 2.17% corresponds to a mesh parameter difference between GaN and lno.2Gao.8N.
- This can be advantageous so that the primary lattice parameter accommodation layer 113 exhibits little or no defects during its formation from the first primary semiconductor portion 112.
- the primary mesh parameter accommodation layer 113 may be advantageous to create an atomic concentration gradient in the primary mesh parameter accommodation layer 113.
- this makes it possible to gradually adapt the lattice parameters between the first primary semiconductor portion 112 through the primary lattice parameter accommodation layer 113 up to the second primary active semiconductor portion 114. The stresses are thus reduced and the dislocations avoided.
- the notion of “primary” refers only to a first sub-pixel of a given pixel, this first sub-pixel being intended to emit light according to a first color.
- the concept of “secondary” refers only to a second sub-pixel of the pixel, this second sub-pixel being intended to emit light according to a second color different from the first color.
- the concept of “tertiary” refers only to a third sub-pixel of the pixel, this third sub-pixel being intended to emit light according to a third color different from the first color and from the second color.
- the terms “primary”, “secondary” and “tertiary” do not induce any notion of order of manufacture or order of importance between the different sub-pixels.
- the primary mesh parameter accommodation layer 113 comprises at least one primary sub-layer for accommodation of mesh parameters of a first nature 113a. It is configured so that the second primary active semiconductor portion 114, formed on and in contact with said primary sub-layer for accommodating lattice parameters of a first nature 113a, is capable of emitting a first light radiation, generally of blue color consisting of light rays having essentially wavelengths between a first minimum value equal to 440 nm and a first maximum value equal to 500 nm.
- the primary lattice parameter accommodation sublayer of a first nature 113a has, at least at its interface with the first primary semiconductor portion 112, a third primary lattice parameter difference of between 1.07% and 0.65% with respect to the lattice parameters of the first primary semiconductor portion 112.
- the primary sub-layer for accommodating lattice parameters of a first nature 113a contains a first alloy of aluminum, gallium, indium and nitrogen, in particular containing a proportion of gallium which decreases according to the first direction 111a and in a direction opposite to the top end 112a of the first primary semiconductor portion 112.
- the primary mesh parameter accommodation layer 113 comprises at least one primary sub-layer for accommodation of mesh parameters of a second nature 113b.
- the first light radiation capable of being emitted by the second primary active semiconductor portion 114 formed on and in contact with said primary sub-layer for accommodating lattice parameters of a second nature 113b is generally green in color, being made up of light rays having essentially wavelengths between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm.
- the primary second-nature mesh parameter accommodation sublayer 113b is arranged at least on, and in contact with, the first-type mesh parameter accommodation primary sublayer 113a.
- the primary sub-layer for accommodation of mesh parameters of a second nature 113b has, at least at its interface with the primary sub-layer for accommodation of mesh parameters of a first type 113a, a fourth difference in parameters of primary mesh between 1.71% and 3.22% with respect to the mesh parameters of the primary sub-layer for accommodating mesh parameters of a first nature 113a.
- the primary sub-layer for accommodating lattice parameters of a second nature 113b contains a second alloy of gallium, indium and nitrogen, in particular containing a proportion of indium which decreases in the first direction. 111a and in the opposite direction to the top end 112a of the first primary semiconductor portion 112.
- the primary mesh parameter accommodation layer 113 comprises at least one primary sub-layer for accommodation of mesh parameters of a third nature 113c.
- the second primary active semiconductor portion 114 formed on, and in contact with the primary sub-layer for accommodating lattice parameters of a third nature 113c, preferably by epitaxy, is able to emit the first light radiation so that it is generally red in color, consisting of light rays having essentially wavelengths between a third minimum value equal to 570 nm and a third maximum value equal to 680 nm.
- the primary sub-layer for accommodation of mesh parameters of a third nature 113c is arranged at least on, and in contact of, the primary sub-layer of accommodation of mesh parameters of a second nature 113b.
- the primary sub-layer for accommodating lattice parameters of a third nature 113c then has, at least at its interface with the primary sub-layer for accommodating lattice parameters of a second type 113b, a fifth difference of primary mesh parameters between 1.25% and 1.75% with respect to the mesh parameters of the primary sub-layer for accommodating mesh parameters of a second nature 113b.
- the primary third-nature lattice parameter accommodation sublayer 113c contains a third alloy of gallium, indium and nitrogen.
- each pixel 11 comprises at least one secondary sub-pixel 11b comprising at least one secondary light-emitting diode 121 capable of emitting a second light radiation having substantially a second wavelength different from the first wavelength. and formed on the support face 110 of the substrate 101.
- Each secondary light-emitting diode 121 comprises:
- first secondary semiconductor portion 122 offset relative to the first primary semiconductor portion 112 in a general plane parallel to the support face 110, electrically connected to a first electrode and doped according to a first type of doping chosen from among an N type doping and a P-type doping, the first secondary semiconductor portion 122 having a generally wire shape elongated along a longitudinal axis A extending in the first direction 111a, the first secondary semiconductor portion 122 having a top end 122a opposite to a proximal end of the first secondary semiconductor portion 122 turned towards the support face 110 of the substrate 101,
- At least one secondary mesh parameter accommodation layer 123 arranged at least on, and in contact with, the top end 122a of the first secondary semiconductor portion 122,
- a second secondary active semiconductor portion 124 formed by epitaxial growth from the secondary lattice parameter accommodation layer 123, the second secondary active semiconductor portion 124 being arranged at least on, and in contact with, the accommodation layer of secondary mesh parameters 123,
- a third secondary semiconductor portion 125 electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping and arranged at least on, and in contact with, the second secondary active semiconductor portion 124.
- the second secondary active semiconductor portion 124 is configured so as to emit said second light radiation when at least one of the first and second electrodes is energized.
- the secondary lattice parameter accommodation layer 123 has, at least at its interface with the second secondary active semiconductor portion 124, a first difference in secondary lattice parameters of between 3.51% and 0.30% relative to the second active semiconductor portion secondary 124.
- At least one secondary mesh parameter accommodation layer 123 comprises at least one of the following sublayers:
- a secondary sub-layer for accommodating lattice parameters of a first type 123a configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed on, and in contact with, said sub- secondary layer of accommodation of mesh parameters of a first nature 123a is generally blue in color being made up of light rays having essentially wavelengths between the first minimum value equal to 440 nm and the first maximum value equal to 500 nm,
- a secondary sub-layer for accommodating mesh parameters of a second nature 123b configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed on, and in contact with, said sub- secondary accommodation layer of mesh parameters of a second nature 123b is generally green in color being constituted of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm,
- a secondary sub-layer for accommodating mesh parameters of a third nature 123c configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed on, and in contact with, said sub- secondary accommodation layer of mesh parameters of a third nature 123b is globally red in color being made up of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- the secondary sub-layer for accommodating mesh parameters of a third nature 123c is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a third type 113c.
- the secondary sub-layer for accommodating mesh parameters of a first type 123a is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a first type 113a.
- the secondary sub-layer for accommodating mesh parameters of a second nature 123b is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a second nature 113b.
- each pixel 11 comprises at least one tertiary sub-pixel 11c comprising at least one secondary light-emitting diode 131 capable of emitting a third light radiation having substantially a third wavelength different from the first wavelength and second wavelength and formed on the support face 110 of the substrate 101.
- Each tertiary light emitting diode 131 comprises:
- first tertiary semiconductor portion 132 offset relative to the first primary semiconductor portion 112 and relative to the first secondary semiconductor portion 122 in a general plane parallel to the support face 110 electrically connected to a first electrode and doped according to a first type doping selected from an N-type doping and a P-type doping, the first tertiary semiconductor portion 132 having a generally wire shape elongated along a longitudinal axis A extending in the first direction 111a, the first tertiary semiconductor portion 132 comprising a top end 132a opposite a proximal end of the first tertiary semiconductor portion 132 facing the support face 110 of the substrate 101,
- At least one tertiary mesh parameter accommodation layer 133 arranged at least on, and in contact with, the top end 132a of the first tertiary semiconductor portion 132,
- a second tertiary active semiconductor portion 134 formed by epitaxial growth from the tertiary lattice parameter accommodation layer 133, the second tertiary active semiconductor portion 134 being arranged at least on, and in contact with, the accommodation layer of mesh parameters tertiary 133,
- a third tertiary semiconductor portion 135 electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping and arranged at least on, and in contact with, the second active tertiary semiconductor portion 134.
- the second tertiary active semiconductor portion 134 is configured so as to emit said third light radiation when at least one of the first and second electrodes is supplied.
- the tertiary lattice parameter accommodation layer 133 has, at least at its interface with the second tertiary active semiconductor portion 134, a first difference in tertiary lattice parameters of between 4.39% and 1.21% relative to to the second tertiary active semiconductor portion 134.
- At least one tertiary mesh parameter accommodation layer 133 comprises at least one of the following sublayers:
- a tertiary sub-layer for accommodating mesh parameters of a first nature 133a configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed on, and in contact with, said sub- tertiary layer of accommodation of mesh parameters of a first nature 133a is generally blue in color being made up of light rays having essentially wavelengths between the first minimum value equal to 440 nm and the first maximum value equal to 500 nm,
- a tertiary sub-layer for accommodating lattice parameters of a second nature 133b configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed on, and in contact with, said sub- tertiary layer of accommodation of mesh parameters of a second nature 133b is generally green in color being made up of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm,
- a tertiary sub-layer for accommodating mesh parameters of a third nature 133c configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed on, and in contact with, said sub- tertiary accommodation layer of mesh parameters of a third nature 133c is generally red in color being made up of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- the tertiary sub-layer for accommodating mesh parameters of a third nature 133c is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a third type 113c.
- the tertiary sub-layer for accommodating mesh parameters of a first type 133a is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a first type 113a.
- the tertiary sub-layer for accommodating mesh parameters of a second nature 133b is of the same composition and / or formed at the same time as the primary sub-layer for accommodating mesh parameters of a second nature 113b.
- An optoelectronic device 11 obtained with primary, secondary and tertiary light emitting diodes 111, 121, 131 as described above advantageously makes it possible to obtain light emitting diodes of different colors without using light converters, which is less expensive.
- Another advantage is that a single active layer growth step can be used to make multiple active layer compositions if different accommodation layers of different nature are used for different light emitting diodes.
- the invention also relates to a method of manufacturing an optoelectronic device 10, certain steps of which are illustrated in FIGS. 6 to 9.
- the optoelectronic device 10 comprises a plurality of pixels 11, in which the formation of said plurality of pixels 11 comprises the implementation of a first phase consisting, for each pixel 11, in forming at least one primary sub-pixel 11a comprising at least at least one primary light-emitting diode 111 capable of emitting a first light radiation having substantially a first wavelength and formed on a support face 110 of a substrate 101.
- the first phase comprises the following steps: a) formation, on the support face 110 of the substrate 101, of at least a first primary semiconductor portion 112 intended to be electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and doping of type P, the first primary semiconductor portion 112 having a generally wire shape elongated along a longitudinal axis A extending in a first direction 111a generally perpendicular to the support face 110 of the substrate 101, the first primary semiconductor portion 112 comprising a top end 112a opposite a proximal end of the first primary semiconductor portion 112 facing towards the support face 110 of the substrate 101;
- step a) forming at least one primary mesh parameter accommodation layer 113 at least on, and in contact with, the top end 112a of the first primary semiconductor portion 112 formed in step a);
- step b) forming a second primary active semiconductor portion 114 by epitaxial growth from the primary mesh parameter accommodation layer 113 formed in step b), the second primary active semiconductor portion 114 being arranged on, and in contact of, the primary mesh parameter accommodation layer 113;
- a third primary semiconductor portion 115 intended to be electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping, at least on, and in contact with, the second primary active semiconductor portion 114.
- the second primary active semiconductor portion 114 formed in step c) is configured so as to emit said first light radiation when at least one of the first and second electrodes is supplied.
- the primary lattice parameter accommodation layer 113 formed in step b) has, at least at its interface with the second primary active semiconductor portion 114 formed in step c), a first difference in primary lattice parameters included between 2.12% and 0.93% relative to the second primary active semiconductor portion 114.
- step b) comprises at least one of the following sub-steps:
- a primary sub-layer for accommodating second nature lattice parameters 113b the primary sub-layer for accommodating second nature lattice parameters 113b configured so that the first light radiation capable of d 'be emitted by the second primary active semiconductor portion 114 formed in step c) on, and in contact with, said primary sub-layer for accommodating lattice parameters of a second nature 113b is generally green in color while being consisting of light rays having essentially wavelengths between a second minimum value equal to 500 nm and a second maximum value equal to 570 nm;
- the formation of said plurality of pixels 11 comprises the implementation of a second phase essentially simultaneously with the first phase and consisting, for each pixel 11, in forming at least one secondary sub-pixel 11b comprising at least a secondary light-emitting diode 121 capable of emitting a second light radiation having substantially a second wavelength different from the first wavelength and formed on the support face 110 of the substrate 101.
- the second phase comprises the following steps: e) formation , on the support face 110 of the substrate 101, a first secondary semiconductor portion 122 offset with respect to the first primary semiconductor portion 112 in a general plane parallel to the support face 110, intended to be electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and P-type doping, the first second semiconductor portion area 122 having a generally wire shape elongated along a longitudinal axis A extending in the first direction 111a, the first secondary semiconductor portion 122 having an end top 122a opposite a proximal end of the first secondary semiconductor portion 122 facing towards the support face 110 of the substrate 101, step e) being carried out at the same time and with the same technique as step a);
- step g) forming a second secondary active semiconductor portion (124) by epitaxial growth from the secondary lattice parameter accommodation layer 123 formed in step f), the second secondary active semiconductor portion 124 being arranged on, and in contact with, the secondary mesh parameter accommodation layer 123, step g) being carried out at the same time and with the same technique as step c);
- a third secondary semiconductor portion 125 intended to be electrically connected to a second electrode and doped according to a second type of doping opposite to the first type of doping, at least on, and in contact with, the second secondary active semiconductor portion 124.
- the second secondary active semiconductor portion 124 formed in step g) is configured so as to emit said second light radiation when at least one of the first and second electrodes is energized.
- the secondary lattice parameter accommodation layer 123 formed in step f) has, at least at its interface with the second secondary active semiconductor portion 124 formed in step g), a first difference in secondary lattice parameters included between 3.51% and 0.30% relative to the second secondary active semiconductor portion 124.
- step f) comprises at least one of the following sub-steps:
- step fl formation of at least one secondary sub-layer for accommodating mesh parameters of a first type 123a configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed at the step g) on, and in contact with, said secondary sub-layer for accommodating lattice parameters of a first nature 123a is generally blue in color by being made up of light rays having essentially wavelengths between the first minimum value equal to 440 nm and the first maximum value equal to 500 nm, the secondary sub-layer of accommodation of mesh parameters of a first nature 123a being similar in composition and thickness to the primary sub-layer for accommodating mesh parameters of a first nature 113a and step f) being carried out at the same time and by the same technique as step bl) ;
- step f2) forming a secondary sub-layer for accommodating mesh parameters of a second nature 123b configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed in step g ) on, and in contact with, said secondary sub-layer for accommodating lattice parameters of a second nature 123b is generally green in color, consisting of light rays having essentially wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm, the secondary sub-layer of accommodation of mesh parameters of a second nature 123b being similar in composition and in thickness to the primary sub-layer of accommodation of parameters of mesh of a second nature 113b and step f2) being carried out at the same time and by the same technique as step b2);
- Step f3) formation of at least one secondary sub-layer for accommodating mesh parameters of a third nature 123c configured so that the second light radiation capable of being emitted by the second secondary active semiconductor portion 124 formed at the step g) on, and in contact with, said secondary sub-layer for accommodating mesh parameters of a third nature 123c is generally red in color, consisting of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- the third nature mesh parameter accommodation secondary sublayer 123c is similar in composition and thickness to the third nature mesh parameter accommodation primary sublayer 113c.
- Step f3) is carried out at the same time and by the same technique as step b3).
- the formation of said plurality of pixels 11 comprises the implementation of a third phase essentially simultaneously with the first phase and the second phase and consisting, for each pixel 11, in forming at least one sub-pixel tertiary 11c comprising at least one tertiary light-emitting diode 131 capable of emitting a third light radiation having substantially a third wavelength different from the first wavelength and from the second wavelength and formed on the support face 110 of the substrate 101.
- the third phase consists of the following stages: i) forming, on the support face 110 of the substrate 101, a first tertiary semiconductor portion 132 offset relative to the first primary semiconductor portion 112 and relative to the first secondary semiconductor portion 122 in a general plane parallel to the support face 110, intended to be electrically connected to a first electrode and doped according to a first type of doping chosen from N-type doping and P-type doping, the first tertiary semiconductor portion 132 having a generally wire shape elongated along a longitudinal axis A extending in the first direction 111a, the first tertiary semiconductor portion 122 comprising a top end 132a opposite a proximal end of the first tertiary semiconductor portion 132 facing the support face 110 of the substrate 101, step i) being carried out in the same time and with the same technique as step a) and step e);
- step i) forming at least one tertiary mesh parameter accommodation layer 133 at least on and in contact with the top end 132a of the first tertiary semiconductor portion 132 formed in step i);
- the second tertiary active semiconductor portion 134 formed in step k) being configured so as to emit said third light radiation when at least one of the first and second electrodes is supplied.
- the tertiary lattice parameter accommodation layer 133 formed in step j) has, at least at its interface with the second tertiary active semiconductor portion 134 formed in step k), a first difference in parameters of tertiary mesh between 4.39% and 1.21% relative to the second secondary active semiconductor portion 124.
- step j) comprises at least one of the following sub-steps: jl) formation of at least one tertiary sub-layer for accommodating mesh parameters of a first nature 133a configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed at the step k) on, and in contact with, said tertiary sub-layer for accommodating lattice parameters of a first nature 133a is generally blue in color by being made up of light rays having essentially wavelengths between the first minimum value equal to 440 nm and the first maximum value equal to 500 nm, the tertiary sub-layer for accommodating lattice parameters of a first nature 133a being similar in composition and thickness to the primary accommodation sub-layer of mesh parameters of a first nature 113a and with the secondary sub-layer of accommodation of mesh parameters of a first nature 123a and step jl) being carried out at the same time and by the same technique as step b1) and as step f1)
- a tertiary sub-layer for accommodating mesh parameters of a second nature 133b configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed in step k ) on, and in contact with, said tertiary sub-layer for accommodating mesh parameters of a second nature 133b is generally green in color, consisting of light rays essentially having wavelengths between the second minimum value equal to 500 nm and the second maximum value equal to 570 nm, the tertiary sub-layer of accommodation of mesh parameters of a second nature 133b being similar in composition and in thickness to the primary sub-layer of accommodation of parameters mesh of a second nature 113b and to the secondary sub-layer for accommodating mesh parameters of a second nature 123b and step j2) being carried out at the same time and by the a same technique as step b2) and as step f2);
- Step j3) formation of at least one tertiary sub-layer for accommodating mesh parameters of a third nature 133c configured so that the third light radiation capable of being emitted by the second tertiary active semiconductor portion 134 formed at the step k) on, and in contact with, said tertiary sub-layer for accommodating lattice parameters of a third nature 133c is generally red in color, consisting of light rays having essentially wavelengths between the third minimum value equal to 570 nm and the third maximum value equal to 680 nm.
- the sub- Tertiary third-nature mesh parameter accommodation layer 133c is similar in composition and thickness to the third-kind mesh parameter accommodation primary sublayer 113c and the secondary sublayer of accommodation of mesh parameters of a third nature 123c.
- Step j3) is carried out at the same time and by the same technique as step b3) and as step f3).
- step c Before performing step c), it may be necessary to perform etching operations on the primary sub-layer for accommodating lattice parameters of a third nature 113c and the primary sub-layer for accommodating lattice parameters. of a second nature 113b.
- the etching can be carried out, for example, by plasma or by a wet process or even by using chemical mechanical polishing.
- step g it may be necessary to perform etching operations on the secondary sublayer for accommodating lattice parameters of a third nature 123c in order to expose the secondary sublayer. of accommodation of mesh parameters of a second nature 123b.
- the etching can be carried out, for example, by plasma or by a wet process or even by using chemical mechanical polishing.
- the first and second electrodes are deliberately not shown and a person skilled in the art will be able to use his knowledge to produce them.
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1907920A FR3098987B1 (fr) | 2019-07-15 | 2019-07-15 | Dispositif optoelectronique dont les pixels contiennent des diodes electroluminescentes emettant plusieurs couleurs et procede de fabrication |
| PCT/FR2020/051119 WO2021009426A1 (fr) | 2019-07-15 | 2020-06-26 | Dispositif optoélectronique dont les pixels contiennent des diodes électroluminescentes émettant plusieurs couleurs et procédé de fabrication |
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| EP4000092A1 true EP4000092A1 (de) | 2022-05-25 |
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| EP20747046.9A Pending EP4000092A1 (de) | 2019-07-15 | 2020-06-26 | Optoelektronische vorrichtung, in der die pixel leuchtdioden enthalten, die mehrere farben emittieren, und herstellungsverfahren |
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| Country | Link |
|---|---|
| US (1) | US20220278081A1 (de) |
| EP (1) | EP4000092A1 (de) |
| JP (1) | JP2022541170A (de) |
| FR (1) | FR3098987B1 (de) |
| WO (1) | WO2021009426A1 (de) |
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| KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102337405B1 (ko) * | 2014-09-05 | 2021-12-13 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| FR3031238B1 (fr) * | 2014-12-30 | 2016-12-30 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
| FR3053530B1 (fr) | 2016-06-30 | 2018-07-27 | Aledia | Dispositif optoelectronique a pixels a contraste et luminance ameliores |
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2019
- 2019-07-15 FR FR1907920A patent/FR3098987B1/fr active Active
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2020
- 2020-06-26 WO PCT/FR2020/051119 patent/WO2021009426A1/fr unknown
- 2020-06-26 US US17/627,464 patent/US20220278081A1/en active Pending
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| Publication number | Publication date |
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| JP2022541170A (ja) | 2022-09-22 |
| WO2021009426A1 (fr) | 2021-01-21 |
| FR3098987A1 (fr) | 2021-01-22 |
| US20220278081A1 (en) | 2022-09-01 |
| FR3098987B1 (fr) | 2021-07-16 |
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