EP3924694A1

EP3924694A1 - Sensor apparatus and operating method therefor

Info

Publication number: EP3924694A1
Application number: EP20703944.7A
Authority: EP
Inventors: Ernst Halder; Torsten Wegner
Original assignee: Novotechnik Messwertaufnehmer oHG
Current assignee: Novotechnik Messwertaufnehmer oHG
Priority date: 2019-02-12
Filing date: 2020-01-24
Publication date: 2021-12-22
Also published as: TW202030897A; WO2020164882A1; TWI787580B; CN113396315A; DE102019103522A1; BR112021015863A2; US20220120587A1

Abstract

An apparatus, in particular a sensor apparatus, comprises a magnet arrangement for generating a magnetic field, which magnet arrangement extends along a longitudinal axis and is embodied such that it generates the magnetic field with at least one first radial magnetic field component that changes along the longitudinal axis, and a magnetic sensor device, which has a first magnetic sensor and a second magnetic sensor and is arranged to be movable relative to the magnet arrangement along the longitudinal axis.

Description

Title: Sensor device and operating method therefor

description

State of the art

The disclosure relates to a device, in particular a sensor device. The disclosure also relates to an operating method for such a device.

Disclosure of the invention

Preferred embodiments relate to a device, in particular a sensor device, having a magnet arrangement extending along a longitudinal axis for generating a magnetic field, which is designed in such a way that the magnetic field changes with at least one first radial (e.g. perpendicular to the longitudinal axis) that changes the magnetic field standing) magnetic field component, and a magnetic sensor device which is movably arranged relative to the magnet arrangement along the longitudinal axis and has a first magnetic sensor and a second magnetic sensor. This enables a particularly precise determination of the at least one first radial magnetic field component that changes along the longitudinal axis.

In further preferred embodiments it is provided that the device has a carrier for receiving the magnet arrangement.

In further preferred embodiments it is provided that the carrier essentially

is designed as a hollow cylinder, wherein the magnet arrangement is preferably arranged radially inside the carrier. An arrangement of the magnet arrangement radially outside of the carrier is also possible in further embodiments.

In further preferred embodiments, the optional carrier can also have a basic shape other than the hollow-cylindrical basic shape mentioned by way of example, for example cuboid shape or band shape (essentially cuboid shape with significantly greater length than width and height and preferably different width and height) or rod shape or the like.

In further preferred embodiments, it is provided that the magnet arrangement can be arranged statically, in particular on a carrier and / or on a target system, the sensor device in particular being movable relative to the magnet arrangement, in particular at least along the longitudinal axis.

In further preferred embodiments it is provided that the sensor device can be statically arranged, in particular fastened or fastened to a target system, wherein in particular the magnet arrangement is movable relative to the sensor device, in particular at least along the longitudinal axis.

In further preferred embodiments it is provided that the magnet arrangement is movable, in particular at least along the longitudinal axis, the sensor device likewise being movable relative to the magnet arrangement, in particular at least along the longitudinal axis.

Further preferred embodiments relate to a device, in particular a sensor device, having an essentially hollow cylindrical carrier with a longitudinal axis, a magnet arrangement, preferably arranged radially inside the carrier, extending along the longitudinal axis for generating a magnetic field, which is designed so that it Magnetic field with at least one first radial magnetic field component that changes along the longitudinal axis is generated, and one, preferably radially inside the magnet arrangement and, along the longitudinal axis, in particular to and fro, movably arranged magnetic sensor device, which has a first magnetic sensor and a second magnetic sensor having.

In further preferred embodiments it is provided that the first magnetic sensor has a first type of sensor, the second magnetic sensor having a second type of sensor which is different from the first type of sensor. This gives further degrees of freedom for determining the at least one first radial magnetic field component that changes along the longitudinal axis.

In further preferred embodiments it is provided that the magnet arrangement is designed such that it generates the magnetic field with the at least one first radial magnetic field component changing along the longitudinal axis and a second radial magnetic field component changing along the longitudinal axis

Magnetic field component generated, which is preferably perpendicular to the first radial

Magnetic field component. As a result, two, in particular mutually perpendicular, radial magnetic field components are advantageously provided which change along the longitudinal axis of the carrier and thus advantageously enable, for example, an efficient determination of a position of the sensor device. In further preferred embodiments it is provided that the first radial magnetic field component and / or the second radial magnetic field component change at least in regions along the longitudinal axis in a sinusoidal or cosinusoidal manner. This enables a particularly precise determination of the position of the sensor device.

In further preferred embodiments it is provided that the first radial magnetic field component and / or the second radial magnetic field component change at least in areas along the longitudinal axis in a non-sinusoidal or non-cosinusoidal manner, for example in each case linearly, optionally also with a different gradient. This also enables a particularly precise determination of the position of the sensor device.

In further embodiments, combinations of at least one (co) sinusoidal course of the first radial magnetic field component and a non (co) sinusoidal (e.g. linear) course of the second radial magnetic field component are also conceivable.

In further preferred embodiments it is provided that the first radial magnetic field component and / or the second radial magnetic field component change at least in some areas along the longitudinal axis, at least approximately linearly.

In further preferred embodiments it is provided that the magnet arrangement is arranged on a radial inner surface of the carrier, the magnet arrangement in particular covering the radial inner surface of the carrier to at least about 40 percent, further in particular to at least about 90 percent, particularly preferably at least about 95 percent .

In further preferred embodiments it is provided that the magnet arrangement is a

has magnetizable or magnetized material which is magnetized along the longitudinal axis, in particular differently, so that the first and / or second radial magnetic field component, which changes along the longitudinal axis, results.

In further preferred embodiments it is provided that the magnet arrangement has at least one magnet element with an essentially band-shaped basic shape. For example, the essentially band-shaped basic shape can have an essentially rectangular cross section with a length and a width, the width being greater than the length, in particular the width being at least twice as large as the length.

In further preferred embodiments it is provided that the at least one magnetic element is arranged at least approximately helically along one or the radial inner surface of the carrier.

In further preferred embodiments it is provided that at least two magnet elements are arranged at least approximately helically along one or the radial inner surface of the carrier. In further preferred embodiments it is provided that the at least one magnetic element is arranged at least approximately parallel to the longitudinal axis of the carrier.

In further preferred embodiments it is provided that at least two magnet elements are arranged at least approximately parallel to the longitudinal axis of the carrier.

In further preferred embodiments it is provided that the carrier has a material and / or a coating with a material that has a relative permeability of about 100 or more, in particular of about 1000 or more, more particularly of about 2000 or more.

In further preferred embodiments it is provided that the first magnetic sensor and the second magnetic sensor are both arranged in the region of the longitudinal axis, in particular on the longitudinal axis or on a virtual straight line that is parallel to the longitudinal axis.

In further preferred embodiments it is provided that the first magnetic sensor and the second magnetic sensor are arranged one behind the other on the longitudinal axis.

In further preferred embodiments it is provided that the first magnetic sensor is a magnetic revolution counter, which is designed in particular to determine an integral multiple of a relative revolution of the magnetic sensor with respect to the at least one first radial magnetic field component.

In further preferred embodiments it is provided that the second magnetic sensor is a Hall sensor, which is designed in particular to determine the at least one first radial magnetic field component, the second magnetic sensor in particular being designed to detect the first radial magnetic field component and the to determine the second radial magnetic field component.

In further embodiments, however, two magnetic sensors of the Hall sensor type can also be provided.

In further preferred embodiments it is provided that an evaluation unit is provided which is designed to evaluate output signals from the first and second magnetic sensors.

In further preferred embodiments it is provided that the evaluation unit is designed to determine a position of the sensor device in relation to a coordinate of the magnetic element and / or one or the carrier that corresponds to the longitudinal axis.

In further preferred embodiments it is provided that the first magnetic sensor, designed as a magnetic revolution counter, has the following configuration, which is also referred to below as "revolution counter type 1": at least one sensor element with a layer structure that is suitable for this purpose without an energy supply Cause sensor element a change in magnetization when a magnetic field is moved past the sensor element, as well as several to store such changes, wherein the sensor element has a spiral structure which is provided with the layer structure.

In further preferred embodiments it is provided that a 180-degree wall is created in the spiral structure when a magnetic field is moved past the sensor element. In further preferred embodiments it is provided that several 180 degree walls can be stored in the spiral structure. In further preferred embodiments it is provided that one end of the spiral structure is connected to an area called a wall generator. In further preferred embodiments it is provided that the wall generator is designed as an approximately circular area. In further preferred embodiments it is provided that the wall generator is connected to a first electrical contact. In further preferred embodiments it is provided that the other end of the spiral structure is connected to a second electrical contact. In further preferred embodiments it is provided that the other end of the spiral structure tapers to a point. In further preferred embodiments it is provided that the spiral structure has a layer structure with at least one soft magnetic layer, at least one non-magnetic layer and at least one hard magnetic layer in succession. In further preferred embodiments it is provided that the soft magnetic layer represents a sensor layer in which the magnetization is changed by the passing of a magnetic field, and that the hard magnetic layer represents a reference layer in which the

Magnetization is not changed by moving a magnetic field past. In further preferred embodiments, it is provided that an antiparallel magnetization in a region of the spiral structure causes an increased electrical resistance in this region. In further preferred embodiments it is provided that the magnetization of the reference layer is a

Orientation approximately parallel to the course of the spiral structure and always in the same direction of the spiral structure. In further preferred embodiments it is provided that the spiral structure has several straight sections running approximately parallel to one another, and that the magnetization of the reference layer has an orientation which is oriented approximately parallel to the straight sections. In further preferred embodiments it is provided that the spiral structure represents a double spiral, one of the two spirals being provided for electrical contacting.

In further preferred embodiments it is provided that the spiral structure

having semicircular pieces and straight pieces, and that the semicircular pieces

are short-circuited and form an electrical contact. With other preferred

Embodiments are provided that the spiral structure semicircular pieces and

Has straight sections, and that the straight sections are contacted separately. In further preferred embodiments, it is provided that the first magnetic sensor, designed as a magnetic revolution counter, has the following configuration, which is also referred to below as "revolution counter type 2": a loop-like arrangement with N windings, having a GMR layer stack, in the magnetic 180 ° domains can be introduced, stored and read out by measuring the electrical resistance, with stretched loop sections being provided at a predeterminable angle to the reference direction imprinted in the sensor, which are provided, preferably in the center, with contacts that can be acted upon by an electrical potential , which are used in series or parallel to read electrical resistance ratios of individual loop sections to further individual contacts provided in the curved areas of the loop-like arrangement, with the determined resistance ratios in particular being a direct measure of the presence or

The absence of a magnetic domain in the corresponding loop section and thus provide a clear statement about the number of rotations that have taken place. With other preferred

Embodiments provide that the longitudinal extension alignment of stretched loop sections is carried out parallel to the reference direction in the sensor, the stretched first

Loop sections are covered by a first common first contact arranged centrally on the loop sections and the opposing stretched second loop sections are also covered by a centrally arranged second contact, an electrical potential being applied between these contacts and the serial or parallel reading of the electrical resistance ratios of

Loop sections to further individual contacts provided at least on one side in a region of curvature of the loops takes place. In further preferred embodiments, it is provided that the longitudinal extension alignment of stretched adjacent loop sections runs at an angle in the order of magnitude of 45 ° to the reference direction in the sensor and preferably in the middle of said stretched neighboring loop sections are provided with an electrical potential to which contacts can be applied in series or enable the reading of the electrical resistance ratios of individual loop sections to further individual contacts provided in the areas of curvature of the loop sections. In further preferred embodiments, it is provided that the entire loop-like arrangement is diamond-shaped in plan view, with the contacts that can be subjected to an electrical potential being provided in opposite diamond corners and the individual contacts provided for separate resistance ratio measurement being arranged in the remaining diamond corners. In further preferred embodiments it is provided that the diamond-shaped design of the loop-like arrangement takes place in such a way that adjacent diamond legs enclose an angle of 90 °. In further preferred embodiments it is provided that the diamond-shaped design of the loop-like arrangement takes place in such a way that the rhombuses are designed in a distorted manner such that opposite diamond corners enclose an obtuse or acute angle. In further preferred embodiments it is provided that the with an electrical Contacts that can be acted upon by potential are structured in themselves and each loop section to which they are assigned is electrically separated. In further preferred embodiments, it is provided that all electrical contacts provided are designed so large in terms of area that uncontacted loop sections of all loops remaining between adjacent contacts have the same length. In further preferred embodiments it is provided that, in addition to the loop-like arrangement, separate, non-magnetizable strip sections are provided, which are each arranged parallel to adjacent, closed loop sections.

Further preferred embodiments relate to a method for operating a device, in particular a sensor device, having a device that extends along a longitudinal axis

Magnet arrangement for generating a magnetic field, which is designed so that it generates the magnetic field with at least one first radial magnetic field component changing along the longitudinal axis, and a magnetic sensor device which is movably arranged relative to the magnet arrangement along the longitudinal axis and has a first magnetic sensor and a second having a magnetic sensor, the method comprising the following step: moving the sensor device along the longitudinal axis relative to the magnet arrangement.

In further preferred embodiments it is provided that the step of moving comprises: a) fixing (fixing or holding) the magnet arrangement and moving the sensor device relative to the magnet arrangement along the longitudinal axis, b) fixing the sensor device and moving the magnet arrangement relative to the Sensor device along the longitudinal axis, c) moving the

Magnet arrangement and moving the sensor device relative to one another along the longitudinal axis.

In further preferred embodiments, it is provided that the device has an evaluation unit which evaluates output signals from the first and second magnetic sensors.

In further preferred embodiments, it is provided that the evaluation unit determines an, in particular relative, position of the sensor device in relation to a coordinate corresponding to the longitudinal axis, in particular of the magnetic element and / or the carrier, depending on the output signals of the first and second magnetic sensors.

In further preferred embodiments it is provided that the first magnetic sensor and the second magnetic sensor are arranged on the longitudinal axis or on a virtual straight line that is parallel to the longitudinal axis, the evaluation unit being designed to provide an axial offset of the two magnetic sensors to take into account one another along the longitudinal axis, in particular to take into account when determining the position of the sensor device.

In further preferred embodiments it is provided that a magnetic revolution counter is used as the first magnetic sensor, which is in particular designed to be an integer To determine a multiple of a relative rotation of the magnetic sensor in relation to the at least one first radial magnetic field component.

In further preferred embodiments, it is provided that the revolution counter has: a loop-like arrangement provided with N windings, having a GMR layer stack, into which magnetic 180 ° domains can be introduced, stored and read out by measuring the electrical resistance, with stretched executed loop sections are provided at a predeterminable angle to the reference direction impressed in the sensor, which are provided, preferably in the center, with contacts to which an electrical potential can be applied, which are in series or parallel to the reading of electrical

Resistance ratios of individual loop sections to further individual contacts provided in the areas of curvature of the loop-like arrangement serve, with the determined resistance ratios in particular providing a direct measure of the presence or absence of a magnetic domain in the corresponding loop section and thus a clear statement about the number of revolutions that have taken place.

In further preferred embodiments it is provided that the revolution counter has:

At least one sensor element with a layer structure that is suitable without an energy supply to cause a change in the magnetization in the sensor element when a magnetic field is moved past the sensor element, as well as to store several such changes, the sensor element having a spiral structure which is provided with the layer structure.

In further preferred embodiments it is provided that a Hall sensor is used as the second magnetic sensor, which is designed in particular to have the at least one first radial

To determine magnetic field component, wherein the second magnetic sensor is further designed to determine the first radial magnetic field component and the second radial magnetic field component, which is preferably perpendicular to the first radial magnetic field component.

Further preferred embodiments relate to a system having a movable element and at least one device according to the embodiments, wherein at least one component of the magnet arrangement, in particular a magnetic element of the magnet arrangement, is arranged on the movable element, and in particular the magnetic sensor device is arranged in a stationary manner.

Further preferred embodiments relate to a use of the device according to the embodiments and / or the method according to the embodiments and / or the system according to the embodiments in a displacement transducer.

Further features, possible applications and advantages of the invention emerge from the

The following description of exemplary embodiments of the invention, which are shown in the figures. All of the features described or shown form the by themselves or in any combination Subject matter of the invention, regardless of how they are summarized in the claims or their reference back, and regardless of their formulation or representation in the description or in the drawing.

The drawing shows: FIG. 1 schematically a device according to preferred embodiments in partial cross-section with a view in the longitudinal direction,

Figure 2 details of the device according to Figure 1,

FIG. 3 schematically shows a simplified block diagram of a sensor device according to further preferred ones

Embodiments, Figure 4A,

4B, 4C each operating parameters according to further preferred embodiments,

Figure 5,

6, 7 each schematically shows a device according to further preferred embodiments in

partial cross-section, Figure 8A,

8B, 8C each schematically shows a device according to a further preferred embodiment in partial cross section,

FIG. 9 schematically shows a simplified block diagram of an evaluation unit according to further preferred embodiments, FIGS. 10 to 20 each schematically show aspects of a type of magnetic revolution counter according to further preferred embodiments,

FIGS. 21 to 30b each show schematically aspects of a further type of magnetic revolution counter according to further preferred embodiments, FIG. 31 schematically shows a simplified flow diagram of a method according to further preferred embodiments,

FIG. 32A schematically shows a device according to further preferred embodiments in FIG

partial cross-section looking in the longitudinal direction,

FIG. 32B schematically shows a side view of a device according to further preferred ones

Embodiments, and

FIG. 32C schematically shows a side view of a device according to further preferred ones

Embodiments.

FIG. 1 shows schematically a device 100 according to preferred embodiments in partial cross section with a view in the longitudinal direction.

The device 100 has an optional, in the present example essentially hollow-cylindrical carrier 110 with a longitudinal axis 112, which is oriented perpendicular to the plane of the drawing in FIG. 1 and in this respect corresponds to the coordinate z, while a horizontal coordinate in FIG. 1 with the reference symbol x and a in the figure, the vertical coordinate is provided with the reference symbol y. The device 100 further has a magnet arrangement 120, preferably arranged radially inside the optional carrier 110, extending along the longitudinal axis 112, for generating a magnetic field, which is designed such that the magnetic field with at least a first one extends along the longitudinal axis 112 (ie generated along the z coordinate) changing radial magnetic field component Bx (radial magnetic field component along the coordinate x).

In further, particularly preferred embodiments, which are described below e.g. As described with reference to Figure 32, no optional bracket 110 (Figure 1) is provided and the longitudinal axis 112 corresponds e.g. i.w. the longitudinal axis of the magnet arrangement 120 or a virtual straight line parallel thereto.

Furthermore, the device 100 according to FIGS. 1, 2 has a magnetic sensor device 130, which is arranged preferably radially inside the magnet arrangement 120 and, in particular to move back and forth, along the longitudinal axis 112 and is shown in the view according to FIG. 2 . The sensor device 130 has a first magnetic sensor 131 and a second magnetic sensor 132. This enables a particularly precise determination of the at least one first radial magnetic field component Bx that changes along the longitudinal axis 112. The sensor device 130 is preferably arranged so that it can be moved back and forth along the longitudinal axis 112 of the carrier by means of a sliding guide 130a, 130b. Optionally, a circuit carrier plate 134 can also be provided, for example for making electrical contact with at least one component of the sensor device 130. In further preferred embodiments it is provided that the first magnetic sensor 131 has a first sensor type, the second magnetic sensor 132 having a second sensor type which is different from the first sensor type. This provides further degrees of freedom for determining the at least one first radial magnetic field component Bx that changes along the longitudinal axis 112.

In further preferred embodiments, it is provided that the magnet arrangement 120 is designed such that it generates the magnetic field with the at least one first radial magnetic field component Bx changing along the longitudinal axis 112 and a second radial magnetic field component changing along the longitudinal axis 112 (similarly or in particular differently) By (Fig. 1) generated, which is preferably perpendicular to the first radial magnetic field component Bx. This advantageously provides two, in particular perpendicular, radial magnetic field components Bx, By which change along the longitudinal axis 112 of the carrier 110 and thus e.g. advantageously enable a position of the sensor device 130 to be determined efficiently.

In further preferred embodiments, it is provided that the first radial magnetic field component Bx and / or the second radial magnetic field component By changes at least in areas along the longitudinal axis 112 or z-coordinate non-sinusoidally or non-cosinusally, for example in each case linearly, optionally also with different ones Pitch. This enables a particularly precise determination of the position of the sensor device 130.

FIG. 4A shows this in the form of curve K1 (plotted in any unit, e.g.

normalized amount of the magnetic field strength as a function of the coordinate z) a course of the first radial magnetic field component Bx along the longitudinal axis 112 or z-coordinate of the carrier 110, that is, along a perpendicular to the plane of the drawing in FIG. 1. As can be seen, the curve rises K1 linearly from a minimum value “0” at the z-coordinate z0 to a maximum value “1” at the z-coordinate z1.

Curve K2 gives an example of a course of the second, optional radial magnetic field component By

(plotted in any unit, e.g. normalized amount of the magnetic field strength as a function of the z coordinate) along the z coordinate of the carrier 110. As can be seen, the curve K2 falls linearly from a maximum value “1” at the z coordinate z0 to a minimum value “0” at the z coordinate z1. By evaluating the first radial magnetic field component Bx and / or the second radial

Magnetic field component By by means of the two sensors 131, 132 can advantageously be inferred by means of the sensor device 130 (FIG. 2) as to a current position “z” of the sensor device 130 along the coordinate z within the carrier 110.

FIG. 4B shows, by way of example, possible courses of the first radial magnetic field component Bx, cf. Curve K3, and the optional second radial magnetic field component By, cf. Curve K4 along the coordinate z. As can be seen, the curve K3 rises linearly from a minimum value “0” at the z coordinate z0 'to one Maximum value "1" at the z coordinate z1 '. In contrast, curve K4 rises linearly several times within the same interval (z0', z1 ') from a minimum value, which is not specified for reasons of clarity, to a maximum value, which is also not specified Accordingly, K4 alone does not allow an unambiguous determination of the position of the sensor device 130 in the observed interval (z0 ', z1'), which for example corresponds at least approximately to a length of the carrier 110

Taking the curve K3 into account, however, the uniqueness can be established at least in the observed interval (z0 ‘, zT).

In further embodiments, it is also conceivable that the magnetic field arrangement 120 is designed such that at least one radial magnetic field component can have negative values at least temporarily (that is, at least in sections in some areas along the z coordinate). This is indicated in the present case by the further coordinate axis z ‘, which is shifted vertically in relation to the axis z according to FIG. 4B.

In further preferred embodiments, cf. Fig. 4C, it is provided that the first radial

Magnetic field component Bx and / or the second radial magnetic field component By changes at least in regions along the longitudinal axis 112 sinusoidally or cosinusoidally, cf. the curves K5, K6. A particularly precise determination of the position of the sensor device 130 is thereby also made possible.

In further preferred embodiments it is provided that the magnet arrangement 120 (FIG. 1) is arranged on a radial inner surface 110a of the carrier 110, in particular the

Magnet arrangement 120 covers the radial inner surface 110a of the carrier to at least about 40 percent, further in particular to at least about 90 percent, particularly preferably to at least about 95 percent.

In further preferred embodiments, it is provided that the magnet arrangement 120 has a magnetizable or magnetized material that is magnetized along the longitudinal axis 112 (corresponding to the coordinate z), in particular differently, that the first and / or the changing along the longitudinal axis 112 or second radial magnetic field component Bx, By, cf. Figures 4A, 4B, 4C result.

For example, the magnet arrangement 120 can be provided in the form of a coating on the inner surface 110a, which after it has been applied to the inner surface 110a of the carrier 110 in the desired manner, cf. e.g. 4A, 4B, 4C, is magnetized.

In further preferred embodiments, cf. Fig. 3, it is provided that the first magnetic sensor 131 and the second magnetic sensor 132 both in the area of the longitudinal axis 112, in particular on the Longitudinal axis 112 or a virtual straight line parallel thereto are arranged, which results in a particularly precise determination of the position z along the longitudinal axis 112 or z-coordinate.

In further preferred embodiments it is provided that the first magnetic sensor 131 and the second magnetic sensor 132 are arranged one behind the other on the longitudinal axis 112 or said virtual straight line, which results in an offset V along the longitudinal direction, which may be advantageous in the evaluation output signals of the sensors 131, 132 can be taken into account by means of an optional evaluation unit 136.

In further preferred embodiments, cf. the device 100a from FIG. 5, it is provided that the magnet arrangement 120 has at least one magnet element 122 with an essentially band-shaped basic shape. The magnetic element 122 is arranged at least approximately parallel to the longitudinal axis 112 of the optional carrier 110. For example, the essentially band-shaped basic shape 122 can have an essentially rectangular cross section with a length (along the y-coordinate from FIG. 1) and a width (along the x-coordinate from FIG. 1), the width being greater than that Length, in particular the width being at least twice as large as the length. The magnetic element 122 is arranged, for example, on the inner surface 110a, e.g. inserted into a groove (not shown) formed therein. In further preferred embodiments, based on the configuration 100a shown in FIG. 5, the optional carrier 110 can also be omitted, the magnetic element 122 e.g. to a target system in which the device 100a is to be built or with which the device 100a is to be used, can be or is fastened. In further preferred embodiments, the magnetic element 122 can be fixed or attached to the target system in a stationary manner, and the sensor device 130 is designed to be movable relative to the stationary magnetic element 122 (along the longitudinal axis 112). In further preferred embodiments, the sensor device 130 may alternatively be stationary, e.g. be fixed or attached to the target system (not shown in FIG. 5), and the magnetic element 122 (possibly together with a component of the target system) is designed to be movable relative to the stationary sensor device 130 (along the longitudinal axis 112).

In further preferred embodiments, cf. the device 100b from Fig. 6 are two i.w.

band-shaped magnetic elements 122a, 122b are provided. Both magnet elements 122a, 122b are arranged at least approximately parallel to the longitudinal axis 112 of the carrier 110. With other preferred

Embodiments, proceeding from the configuration 100b shown in FIG. 6, can also dispense with the optional carrier 110, wherein for attaching the magnetic elements 122a, 122b e.g. on a target system and / or a fixed attachment or individual mobility of the components 122a, 122b, 130, what was said above with reference to FIG. 5 applies accordingly.

In further preferred embodiments, cf. the device 100c from FIG. 7, four essentially band-shaped magnetic elements 122a, 122b, 122c, 122d are provided. In the present case, all four magnetic elements 122a, 122b, 122c, 122d are arranged at least approximately parallel to the longitudinal axis 112 of the carrier 110. In further preferred embodiments, based on the configuration 100c shown in FIG. 7, the optional carrier 110 can also be omitted, whereby for the attachment of the magnetic elements 122a, 122b, 122c, 122d, for example, to a target system and / or a stationary attachment or individual Mobility of the

Components 122a, 122b, 122c, 122d, 130 what was said above with reference to FIGS. 5, 6 applies accordingly.

Some or all of the magnet elements of FIGS. 5, 6, 7 provided in each case are advantageously magnetized along the longitudinal direction 112 (z coordinate) in such a way that a course corresponding to FIG. 4A and / or FIG. 4B and / or FIG at least one radial magnetic field component Bx, By (FIG. 1) along the longitudinal direction 112 (z coordinate) results. For example, the four magnetic elements 122a, 122b, 122c, 122d can advantageously be magnetized along their longitudinal axis (and thus also along the longitudinal axis 112 of the optional carrier 110) in such a way that the radial magnetic field components Bx, By (FIG. 1) along the longitudinal axis 112 of the carrier 110 have the course corresponding to the curves K5, K6 according to FIG. 4C.

In further preferred embodiments, cf. the device 100d from FIGS. 8A, 8B, 8C, it is provided that the at least one magnetic element 122, 124 is arranged at least approximately helically along one or the radial inner surface 110a of the optional carrier 110 (i.e. in particular not approximately parallel to the Longitudinal axis 112, see the embodiments according to FIGS. 5, 6, 7). In further preferred embodiments, the optional carrier 110 can also be omitted, the magnetic elements 122, 124 e.g. can be arranged or held directly in a target system for the device 100d. In the present case, two again i.w. band-shaped magnetic elements 122, 124 each arranged at least approximately helically on the inner surface 110a of the carrier 110, so that for different positions z = z01 (FIG. 8A), z = z02> z01 (FIG. 8B), z = z03> z02 (Fig. 8C) result in the cross sections shown in Figs. 8A, 8B, 8C. In this embodiment, the two i.w. band-shaped magnetic elements 122, 124 for example also along their length an i.w. Have constant magnetization, since the at least approximately helical arrangement in the carrier 110 results in a magnetic field rotating with movement along the z coordinate (in particular rotating radial components Bx, By) which can be determined by the sensor device 130, which advantageously defines a position of the sensor device 130 can be determined along the z coordinate.

In further preferred embodiments it is provided that the carrier 110 has a material and / or a coating with a material which has a relative permeability of about 100 or more, in particular of about 1000 or more, further in particular of about 2000 or more. As a result, an outer space surrounding the device 100, 100a, 100b, 100c, 100d can be kept largely free of magnetic fields from the magnetic field arrangement 120. At the same time, this shielding enables precise operation of the sensor device 130. In further preferred embodiments it is provided that the first magnetic sensor 131 (Fig.

2) is a magnetic revolution counter, which is designed in particular to measure an integral multiple of a relative revolution of the magnetic sensor 131 with respect to the at least one first radial magnetic field component Bx (or, conversely, an integral multiple of a relative revolution of the first radial magnetic field component Bx with respect to to determine the first sensor 131). It should be noted that in preferred embodiments the first sensor 131 (as well as the second sensor 132) is not rotatably arranged with respect to the carrier 110 or any other component of the device 100, 100a, 100b, 100c, 100d, but only by the sliding guide 130a, 130b (FIG. 2) can be moved axially within the carrier 110 along the longitudinal axis 112. A relative rotation between the described radial magnetic field components Bx, By or a (radial) sum vector Bx + By therefrom and the sensors 131, 132 advantageously results solely from the magnetization that changes along the z coordinate as described above, cf. e.g. Fig. 4A, 4B, 4C and / or the i.w. helical arrangement of the magnetic elements 122, 124 (FIG. 8). As a result, when moving along the longitudinal axis 112, the sensor device 130 "experiences" a corresponding change, for example rotation, of at least one vector Bx, By or the sum vector Bx + By, which can be evaluated by the evaluation unit 136, in particular around the position of the sensor device 130 along the longitudinal axis 112 to be determined.

In further preferred embodiments it is provided that the second magnetic sensor 132 is a Hall sensor, which is designed in particular to include the at least one first radial

To determine the magnetic field component Bx, By, wherein the second magnetic sensor 132 in particular is further designed to detect the first radial magnetic field component Bx and the second radial

To determine magnetic field component By.

In further preferred embodiments, the already mentioned evaluation unit 136 (FIG. 3) is provided, which is designed to evaluate output signals of the first and second magnetic sensors 131, 132, in particular to determine the position of the sensor device 130 along the longitudinal axis 112.

The combination of a magnetic revolution counter (first sensor 131) with a Hall sensor 132 proposed in particularly preferred embodiments advantageously enables particularly precise position determination by the sensor device 130 with a comparatively large measuring range at the same time. For example, the magnetic revolution counter (first sensor 131) can whole

Determine revolutions of the radial magnetic field vector Bx + By (e.g. corresponding to whole periods of the sinusoidal curve K5 from Fig. 4C), and by means of the Hall sensor 132 an exact position within the rotation period of such a revolution of the radial magnetic field vector Bx + By can be determined.

In further preferred embodiments it is provided that the evaluation unit 136 (FIG. 3) is designed to determine a position of the sensor device 130 in relation to one of the longitudinal axis 112 to determine the corresponding coordinate z of the carrier 110. As a result, the device 100, 100a, 100b, 100c, 100d according to the embodiments can advantageously be used to provide a position transmitter.

FIG. 9 schematically shows a simplified block diagram of an embodiment of the evaluation unit 136. The evaluation unit 136 has a computing unit 1002, e.g. a microcontroller or microprocessor, and a memory unit 1004 assigned to the computing unit 1004, which has a volatile memory 1004a (e.g. a working memory, RAM) and / or a non-volatile memory 1004b (e.g. flash EEPROM). At least one computer program PRG, which can control an operation of the device 100, 100a,... 100d, when it is executed on the processing unit 1002, can be stored at least temporarily in the memory unit 1004. In particular, the computer program PRG can have the evaluation of the output signals of the sensors 131, 132 of the sensor device 130 as its object, e.g. in order to determine therefrom the position of the sensor device 130 along the longitudinal axis 112 or the z coordinate.

In further preferred embodiments it is provided that the first magnetic sensor 131, which is designed as a magnetic revolution counter according to further particularly preferred embodiments, has the following configuration, which is also referred to below as "revolution counter type 1": at least one sensor element with a layer structure that is without an energy supply is suitable for causing a change in the magnetization in the sensor element when a magnetic field is moved past the sensor element, as well as storing several such changes, the sensor element having a spiral structure provided with the layer structure.

Aspects of these embodiments are described below with reference to Figures 21-30b. Here, FIG. 21 shows a schematic plan view of an embodiment of a revolution counter of type 1 with a first embodiment of a sensor element, FIG. 22 shows a schematic cross section through the sensor element of FIG. 21, FIG. 23 shows a schematic plan view of the sensor element of FIG. 21, FIGS 24e schematic top views of the sensor element of FIG. 21 with schematically depicted magnetizations, FIG. 25 a schematic top view of the sensor element of FIG. 21 with schematically depicted changes, FIG. 26 a schematic top view of a second exemplary embodiment of the sensor element of FIG. 21, FIG. 27 a schematic top view of a third exemplary embodiment of the sensor element of FIG. 21, FIG. 28 a schematic top view of a fourth exemplary embodiment of the sensor element of FIG. 21, FIG. 29 a schematic top view of a fifth exemplary embodiment of the sensor element of FIG FIG. 21 and FIGS. 30a and 30b are schematic top views of two Wheatstone bridges, which are constructed with sensor elements corresponding to the type 1 revolution counter. In FIG. 21, a revolution counter (type 1) 10 is shown in which a stationary sensor element 11 is assigned to a rotor 12 with two permanent magnets 13, 14. It goes without saying that several sensor elements can also be present, which are arranged, for example, at equal distances from one another along the circumference of the rotor 12. The rotor 12 is rotatable about an axis 16 in both directions according to the arrow 15. The two permanent magnets 13, 14 rotate together with the rotor 12. When the rotor 12 rotates, the magnetic fields of the permanent magnets 13, 14 are moved past the sensor element 11 and detected by it. The permanent magnets 13, 14 can be moved past the sensor element 11 above or below. It is essential that the magnetic fields of the permanent magnets 13, 14 have a sufficiently large but not too strong influence on the sensor element 11, in particular on its layers explained below with reference to FIG.

The magnetization of the two permanent magnets 13, 14 is aligned in opposite directions to one another. This means that when the rotor 12 rotates in the same direction, the first permanent magnet 13 is moved past the sensor element 11 with a north-south orientation, for example, while the second permanent magnet 14 moves past the sensor element 11 with a south-north orientation becomes.

From the point of view of the sensor element 11, for example, the permanent magnet 13 moving past has the following effects: First, the sensor element 11 "sees" the magnetic field lines emerging approximately vertically from the north pole of the permanent magnet 13, then the sensor element 11 "sees" those from the north pole to the south pole parallel magnetic field lines of the permanent magnet 13, and finally the sensor element 11 "sees" the magnetic field lines re-entering the south pole of the permanent magnet 13 approximately perpendicularly. Overall, from the point of view of the sensor element 11, this represents a rotation of the magnetic field lines of the permanent magnet 13 by 180 degrees during the

Moving past.

The two permanent magnets 13, 14 are in FIG. 1 at a distance of 180 degrees on the circumference of the rotor

12 attached. This distance can also be provided asymmetrically. For example, the two permanent magnets 13, 14 can also be attached directly adjacent to one another on the circumference of the rotor 12.

The revolution counter 10 of FIG. 21 is provided for the contactless counting and storage of revolutions of the rotor 10 by the sensor element 11. This counting and storage does not require an external energy supply. The Giant Magneto Resistance (GMR) effect or the Tunnel Magneto Resistance (TMR) effect or the Colossal Magneto Resistance (CMS) effect can be used to read out the stored revolutions. FIG. 22 shows a layer structure 20 of the sensor element 11 which uses the GMR effect to read out the stored revolutions. A soft magnetic layer 21 is separated from a hard magnetic layer 23 by a thin non-magnetic layer 22. An antiferromagnetic layer 24 reinforces the hard magnetic properties of the hard magnetic layer 23 in the sense of a so-called "pinning".

The latter has the consequence that the magnetization in the hard magnetic layer 23, in contrast to the magnetization in the soft magnetic layer 21, is not changed by a magnetic field of one of the two permanent magnets 13, 14 moving past. The soft magnetic layer 21 therefore represents a sensor layer and the hard magnetic layer 23 a reference layer.

On the layer 24 there is a contacting layer 25 on which a first contact 26 is provided. As will be explained below, a second contact 27, not shown in FIG. 22, is present at a different point on sensor element 11. A measuring current can thus flow through the layer structure 20 between the two contacts 26, 27. As will also be explained below, the number of stored revolutions can be deduced from the measurement current.

The contact-making layer 25 can be covered by an insulating layer 28. For the purpose of

In this case, the contacts 26, 27 are at least partially free, that is to say not covered by the insulating layer 28, for making contact. The entire layer structure 20 can be applied to a silicon substrate, for example. The layer structure 20 described is often also referred to as a spin valve.

In connection with the Tunnel Magneto Resistance (TMR) effect, one of the two contacts 26, 27 must be arranged below the non-magnetic layer 22, and the other of the two contacts 26, 27 must be arranged above the non-magnetic layer 22.

In FIG. 23, a shape 30 of the sensor element 11 is shown which has a wall generator 31 and a wall memory 32. Furthermore, the two contacts 26, 27 are shown in FIG. The wall generator 31 is designed as a circular surface and is connected to the contact 26. Of the

Wall storage 32 is designed as a spiral, the outer beginning of which is connected to the wall generator 31, and which, starting from its beginning, is composed of spiral arcs whose radii are getting smaller and smaller. The outermost turn of the spiral in FIG. 3 is composed, for example, of the spiral arcs 33, 34. At the end of the spiral and thus inside the same, the spiral is connected to the contact 27. It should be noted that the wall storage unit 32 can not only be a spiral, but also another spiral structure. For example, a spiral-like structure composed of straight pieces can be provided as wall storage 32, in which the length of the straight pieces becomes smaller and smaller the further the straight pieces are arranged in the interior of the structure. Likewise, as a wall storage 32, for example, a square or Rectangular pieces composed, square or polygonal spiral structure can be provided in which the size of the square or rectangular pieces becomes smaller, the further the pieces are arranged in the interior of the structure. It is also possible that the corners of these spiral-like structures are rounded.

The present exemplary embodiment is explained below with the aid of the spiral shown in FIG. 23 as wall storage 32. However, these explanations also apply accordingly to any other spiral structure.

The spiral shown in FIG. 23 is formed by a strip which, for example, has a width of about 2 micrometers and winds from the outside inwards at a distance of about 2 micrometers. By way of example, the spiral has ten turns.

At the end of the spiral, the aforementioned strip tapers and tapers. The width of the strip is therefore smaller than about 2 micrometers there. This pointed end area of the spiral can either extend only slightly into the area of the contact 27 or be located essentially completely below the contact 27.

The end area of the spiral which ends at a point ensures that no domain wall can be generated or stored in this end area. The arrangement of the pointed end region under the contact 27 ensures that the electrical connection between the spiral and the contact 27 does not deteriorate.

Due to the circular design of the wall generator 31, the magnetization direction of the

The sensor layer of the wall generator 31 can easily follow a magnetic field moving past. As already mentioned, however, the direction of magnetization of the reference layer does not change due to a magnetic field moving past.

In FIGS. 24a to 24e, the sensor element 11 is shown again in the same way as was explained with reference to FIG. In addition, however, arrows along the course of the spiral of the wall reservoir 32 are shown in FIGS. 24a to 24e. These arrows mark the

Direction of magnetization of the spiral, namely the individual arrows always relate to that area of the spiral in which they are respectively drawn.

In FIG. 24a, all directions of magnetization drawn in the area of wall storage 32 have the same direction, and all arrows point counterclockwise from the end of the spiral, i.e. from contact 27, towards the beginning of the spiral, i.e. towards the wall generator 31 that all arrows could also be oriented clockwise and thus the directions of magnetization represented by the arrows could be oriented in opposite directions. For the purpose of explaining the functioning of the sensor element 11, it is assumed that the orientation of the magnetization direction of the spiral shown in FIG. 24a at a first point in time in the soft magnetic layer 21, i.e. in the sensor layer, and also in the hard magnetic layer 23, i.e. in the reference layer of the wall storage 32 is present. This can be achieved by a corresponding formation of the wall storage 32, that is, a premagnetization of the sensor layer and the reference layer of the spiral.

The orientation of the reference layer is always approximately parallel to the course of the strip of the spiral and always oriented in the same direction of the spiral. The direction in which the magnetization of the spiral is oriented, i.e. whether it is clockwise or counterclockwise, is not important here. It is only important that it is always the same direction along the entire spiral. This orientation of the magnetization remains unchangeable in the hard magnetic reference layer.

For example, the permanent magnet 13 is now moved past the sensor element 11 due to a rotation of the rotor 12. As has been explained, this has the consequence that the sensor element 11 “sees” a rotation of the magnetic field of the permanent magnet 13 by 180 degrees. As has also been explained, the direction of magnetization of the sensor layer of the wall generator 31 follows this

magnetic field of the permanent magnet 13 moving past. However, the direction of magnetization of the reference layer does not change.

FIG. 4b shows the orientation of the direction of magnetization of the spiral in the soft magnetic layer 21, i.e. in the sensor layer of the wall storage 32, namely at a second point in time at which the permanent magnet 13 has already moved past the sensor element 11. For clarification, that direction of magnetization is shown as arrow 35 in FIG. 4b, which sensor element 11 “saw” at the end of the movement of permanent magnet 13 past.

As has been explained, the direction of magnetization of the wall generator 31 follows the magnetic field of the permanent magnet 13, so that the arrow 35 in FIG. 4b also represents the direction of magnetization of the wall generator 31.

A comparison of the direction of the arrow 35 of FIG. 4b representing the magnetization direction of the wall generator 31 and the magnetization direction of the start of the spiral before the permanent magnet 13 moves past according to FIG. 24a shows that these magnetization directions are opposite to one another. This has the consequence that a domain wall is created approximately in the area of the connection between the wall generator 31 and the beginning of the spiral (not shown). Because of the unique

If the direction of magnetization changes, this is a 180-degree wall. This 180-degree wall migrates from its place of origin at the beginning of the spiral along the same to a point 41 on the spiral. The aforementioned 180-degree wall is there as a dark rectangle with the reference number 42 marked. At this point 41, the 180-degree wall 42 has an energetically more favorable state than at its point of origin, since only there the adjacent spiral arcs 33, 34 are not anti-parallel

Have components to the direction of magnetization indicated by the arrow 35.

A comparison of FIG. 24b with FIG. 24a shows that the direction of magnetization of the spiral in the sensor layer of wall storage 32 has changed in the area of the first spiral arch 33, but not in the area of the second spiral arch 34 and the subsequent spiral arches.

At the point 41 present approximately between the first spiral arch 33 and the second spiral arch 34, the opposing directions of magnetization of the two spiral arches 33, 34 meet. This results from FIG. 24b in that the arrows shown in FIG

show opposite directions. The 180-degree wall 42 is located approximately at this point 41 of the spiral.

The rotor 12 is now rotated further in the same direction, so that the permanent magnet 14 is moved past the sensor element 11. This in turn has the consequence that the magnetization direction of the sensor layer of the wall generator 31 corresponds to the magnetic field of the moving past

Permanent magnet 14 follows. However, the direction of magnetization of the reference layer does not change.

FIG. 24c shows the orientation of the direction of magnetization of the spiral in the soft magnetic layer 21, i.e. in the sensor layer of the wall storage 32, namely at a third point in time at which the permanent magnet 14 has already moved past the sensor element 11. A comparison of FIG. 24c with FIG. 24b shows that the magnetization direction of the spiral in the sensor layer of the wall storage 32 has changed in the area of the first spiral arch 33 and the second spiral arch 34, but not in the subsequent spiral arches. The change in the first spiral arc 33 is a consequence of a renewed change in the direction of magnetization of the wall generator 31 due to the passing of the permanent magnet 14. The change in the second spiral arc 34 results from the fact that the 180-degree wall 42 has moved on again, and this is due to the aforementioned renewed change in the direction of magnetization of the first spiral arc 33 and the resulting changed energetic state of the 180-degree wall 42.

The 180-degree wall 42, which was present at the point 41 in the second point in time in FIG. 24b, is thus in the third point in time in FIG. 24c at a point 43, which is approximately 180 degrees after the point 41 in the course of the spiral of the wall reservoir 32 is arranged. At the point 41 in FIG. 24c, the opposing directions of magnetization of the two spiral arcs 33, 34 meet again. A further 180-degree wall 44 is therefore located approximately at this point 41 of the spiral, which is identified as a dark rectangle in FIG. 24c. This 180-degree wall is created in the manner already explained in the area of the beginning of the spiral and then migrates to point 41. The rotor 12 is now rotated further in the same direction, so that now again the

Permanent magnet 13 is moved past the sensor element 11. As a result, the

The direction of magnetization of the sensor layer of the wall generator 31 follows the magnetic field of the permanent magnet 13 moving past.

FIG. 24d shows the orientation of the magnetization direction of the spiral in the soft magnetic layer 21, i.e. in the sensor layer of the wall storage 32, namely at a fourth point in time at which the permanent magnet 13 has already moved past the sensor element 11.

In FIG. 24d, the 180-degree wall 42 has moved on again, specifically to the point 41 of the spiral.

There, however, the 180-degree wall 42 is located in the second turn of the spiral and not, as in FIG. 24b, in the first outer turn. Furthermore, the 180-degree wall 44 in the outer turn of the spiral has migrated from the point 41 to the point 43. And finally, at the point 41 in the first, outer turn of the spiral, another 180-degree wall 45 has arisen.

The rotor 12 is now rotated further in the same direction, so that the permanent magnet 14 is moved past the sensor element 11 again. This has the consequence that the magnetization direction of the sensor layer of the wall generator 31 corresponds to the magnetic field of the moving past

Permanent magnet 14 follows.

FIG. 24e shows the orientation of the direction of magnetization of the spiral in the soft magnetic layer 21, i.e. in the sensor layer of the wall storage 32, specifically at a fifth point in time at which the permanent magnet 14 has already moved past the sensor element 11. In FIG. 24e, the 180-degree wall 42 has moved further again, namely to the point 43 of the second turn of the spiral. Furthermore, the 180 degree wall 44 is at point 41 of the second turn of the spiral

hiked on. Correspondingly, the 180-degree wall 45 has moved on to the point 43 of the outer turn. And finally, at the point 41 in the first, outer turn of the spiral, another 180-degree wall 46 has arisen.

From the first point in time in FIG. 24a to the fifth point in time in FIG. 24e, each of the two

Permanent magnets 13, 14 moved past sensor element 11 twice. The rotor 12 has thus rotated two revolutions. As has been explained, a total of four domain walls were created during these two revolutions of the rotor 12 in the spiral of the wall storage 32, namely the four 180-degree walls 42, 44, 45, 46. It is understood that with a further rotation of the rotor 12 further domain walls would arise in a corresponding manner in the same direction.

As has also been explained and as can be seen in particular from FIG. 24e, the

Magnetization directions in the sensor layer of the spiral between the individual 180-degree walls always opposite to each other. This means that in the two outer turns of the spiral, the directions of magnetization are always reversed after each 180-degree wall 42, 44, 45, 46.

In FIG. 25, sensor element 11 is shown again in the same way as was explained with reference to FIG. 23 and FIGS. 24a to 24e. In the figure 25 are the different

However, magnetizations of the spiral of the wall storage 32 are not shown with arrows, as shown in FIGS. 24a to 24e, but those spiral arcs are marked dark, the magnetization of which differs in FIG. 24e from the magnetization of FIG. 24a. A comparison of the two cited figures shows that this is the spiral arc 34 of the outer, first turn of the spiral, as well as a spiral arc 36 which runs adjacent to the spiral arc 34 in the second, next inner turn of the spiral.

The changed direction of magnetization of spiral arcs 34, 36 of FIG. 25 relates, as has been explained, only to the sensor layer of wall storage 32. In the reference layer of the respective spiral arcs 34, 36, however, there is no change in the direction of magnetization. This has the consequence that in the area of the spiral arcs 34, 36 the magnetization of the sensor layer is aligned antiparallel to the magnetization of the reference layer. This is synonymous with the fact that the two spiral arcs 34, 36 form an electrical resistance which, compared to the other spiral arcs, in which the magnetization of the

Sensor layer and the reference layer are aligned parallel to each other, is high.

The electrical resistance of the entire spiral can be determined with the aid of the already mentioned measuring current flowing via the contacts 26, 27. If there is a spiral arc within the spiral, in which the sensor layer and the reference layer are magnetized in antiparallel, this leads to an increased resistance. If there are several such spiral arcs, this leads to a correspondingly multiple increased resistance.

So that a spiral arc in an outer turn of the spiral causes approximately the same change in resistance as a spiral arc in an inner turn, it can be provided that the width of the strip forming the spiral changes over the entire course. For example, in connection with the Giant Magneto Resistance (GMR) effect, the width of the stripe can become smaller and smaller from the outside in.

As has been explained, the two anti-parallel magnetized spiral arcs 34, 36 shown in FIG. 25 are created by two revolutions of the rotor 12. In the exemplary embodiment described, an anti-parallel magnetized spiral arc of the wall storage 32 corresponds exactly to one rotation of the rotor 12. Overall, it is thus possible to infer the electrical resistance of the spiral via the contacts 26, 27 of the sensor element 11. From this, conclusions can be drawn about the number of existing, anti-parallel magnetized spiral arcs and thus about the number of rotations of the rotor 12 carried out.

If the rotor 12 is rotated in its opposite direction, this brings about a change in the energetic state of the 180-degree walls present in the wall storage 32. As a result, these existing 180-degree walls, as already explained, move along the spiral in the direction of the most favorable energetic state possible. Due to the rotation of the rotor 12 in

In the opposite direction, the existing 180-degree walls also move in the opposite direction.

Furthermore, in accordance with the mode of operation already described, 180-degree walls are again created in the wall generator 31, but these are oriented in the opposite direction to the 180-degree walls explained above. This has the consequence that the 180-degree walls that are now created one after the other erase the existing 180-degree walls that are moving in the opposite direction one after the other. The antiparallel magnetized spiral arcs shown in FIG. 25 thus disappear from the inside outwards until the state of FIG. 24a is reached again.

During this reverse rotation of the rotor 12, the number of existing anti-parallel magnetized spiral arcs can be determined, as has been explained, via the contacts 26, 27 in the manner already explained.

If the rotor 12 is then rotated further in the opposite direction after all of the 180-degree walls present in the wall storage 32 have been extinguished, new 180-degree walls are created which migrate into the wall storage 32 in the manner described. The direction of rotation of these new 180-degree walls is opposite to the direction of rotation of the deleted 180-degree walls.

If the rotor 12 is rotated further until all turns of the spiral of the wall storage 31 are occupied by 180-degree walls, no further 180-degree walls are created when the rotor 12 continues to rotate. The number of existing 180-degree walls then remains constant.

The explained mode of operation of the sensor element 11 is independent of an energy supply with regard to the formation of domain walls and the resulting anti-parallel magnetized spiral arcs. This means that a rotation of the rotor 12 always leads to a change in the magnetization directions, even if there is no electrical connection to the contacts 26, 27. The number of rotations of the rotor 12 carried out is thus counted and stored in the spiral of the wall memory 32 without an energy supply.

It is only necessary to allow a measuring current to flow through the contacts 26, 27 for reading out the wall memory 32, that is to say for reading out the number of rotations of the rotor 12 that have been carried out. As mentioned, this measuring current is not required for counting the revolutions. In the sensor element 11 described, the wall generator 31 is arranged at the beginning of the spiral forming the wall storage 32, while only the contact 27 is present at the end of the spiral. Alternatively, it is possible to place the wall generator not at the beginning but only at the end of the spiral.

Alternatively, it is also possible to provide a wall generator at the beginning and at the end of the spiral.

The described revolution counter 10 (FIG. 21) can in particular be used as a first magnetic sensor 131 (FIG. 2) for the device 100, 100a, 100b, 100c, 100d according to the embodiments. For example, the revolution counter 10 (FIG. 21) can detect a radial magnetic field rotating relative to the sensor device 130 (FIG. 2), as can be generated by the magnet arrangement 120 (FIG. 2), and count the corresponding revolutions, from which information about a position of the sensor device 130 can be determined along the z coordinate of the carrier 110. If the first magnetic sensor 131, designed as a revolution counter 10, is moved along the z-coordinate of the carrier 110, this is done by the revolution counter 10 in the form of counted (relative) revolutions of the magnetic field, the radial component (s) of which are along the z-coordinate of the carrier 110 change, detected. This recorded number of revolutions is retained in the revolution counter 10 even if the device 100 is deactivated or if a defect occurs in the power supply of the device.

In the figure 26, a shape 60 of the sensor element 11 is shown, which of the shape 30 of the

Sensor element 11 of FIG. 23 differs. Thus, the sensor element 11 of FIG. 26 has several straight sections parallel to one another, which are connected to one another via semicircular pieces and, overall, form a spiral and thus the wall storage 32.

In the sensor element 11 of FIG. 26, the wall generator 31 is arranged in the interior of the spiral.

Furthermore, the two contacts 26, 27 are indicated in FIG. The magnetization of the

Hard magnetic layer 23, that is to say the reference layer, is preferably aligned approximately parallel to the straight line segments in the sensor element 11 of FIG.

In addition, the explanations relating to FIGS. 21 to 25 apply accordingly to the sensor element 11 in FIG.

In the figure 27 a shape 70 of the sensor element 11 is shown, which of the shape 30 of the

Sensor element 11 of FIG. 23 differs. The shape 70 of FIG. 27 is designed similarly to the shape 60 of FIG. 26. In contrast to FIG. 26, however, the shape 70 of FIG. 27 represents one

Double spiral.

One of the two spirals of the sensor element 11 in FIG. 27 corresponds to the spiral in FIG

Sensor element 11 of Figure 26 and thus the wall storage 32. The other spiral of the sensor element 27, on the other hand, is provided for leading out the internal electrical contact. Thus, in the sensor element 11 of FIG. 27, both contacts 26, 27 are accessible from the outside.

In addition, the explanations relating to FIGS. 21 to 26 apply accordingly to the sensor element 11 in FIG.

In FIG. 28 the electrical contacts of the sensor element 11 are designed differently than this e.g. is the case in FIG. While the contacts 26, 27 are present at the beginning and at the end of the spiral in the sensor element 11 in FIG. 26, this is not the case with the sensor element 11 in FIG. Instead stretch out there. Contacts 26 ', 27' each over the area of the semicircular pieces of the spiral in such a way that only the area of the straight pieces is not covered by the contacts 26 ', 27'. This has the consequence that the semicircular pieces in the area of the two contacts 26 ', 27' are each electrically short-circuited.

While the successive semicircular pieces and straight sections of the spiral thus electrically form a series circuit in sensor element 11 of FIG. 26, this is not the case with sensor element 11 of FIG. 28 due to the short-circuiting effect of contacts 26 ', 27'. Instead, the straight pieces of the spiral electrically form a parallel connection to which the semicircular pieces make no contribution.

As with the sensor element 11 of FIG. 26, the electrical resistance of the spiral in the sensor element 11 of FIG. 28 can also be read in the manner described via the contacts 26 ', 27'. In the sensor element 11 in FIG. 28, however, the electrical resistance is lower than in the sensor element in FIG. 26.

Otherwise, the explanations for FIGS. 21 to 26 apply accordingly to sensor element 11 in FIG. 28.

In FIG. 29 the electrical contacts of the sensor element 11 are designed differently than this e.g. is the case in FIG. While the contacts 26, 27 are present at the beginning and at the end of the spiral in the sensor element 11 in FIG. 26, this is not the case with the sensor element 11 in FIG. Instead, there are contacts 26 ″, 27 ″ at the beginning and at the end of each straight line segment.

The number of contacts 26 ″, 27 ″ present in pairs thus corresponds to the number of straight lines.

The contacts 26 ″, 27 ″ are preferably each spaced apart from one another in such a way that all straight sections are approximately the same length. With this arrangement of the contacts 26 ″, 27 ″ it is possible to read out the electrical resistance of each individual straight section separately. The entire electrical resistance of the spiral can then be derived from these partial resistances. Otherwise, the explanations relating to FIGS. 21 to 26 apply accordingly to sensor element 11 in FIG. 29. In FIGS. 30a and 30b, four sensor elements 11 are combined to form a Wheatstone bridge 1100. The sensor elements 11 can be any embodiments as they have been explained with reference to FIGS. 23 to 29.

In the Wheatstone bridges 1100 of Figures 30a and 30b, the spirals have two each

Sensor elements 11 have a winding sense which is oriented opposite to the spirals of the two other sensor elements 11. In Figures 30a and 30b, the spirals that are in

Clockwise are denoted by the reference numeral 1101, while the spirals which are twisted in the counterclockwise direction are denoted by the reference numeral 1102.

In the Wheatstone bridge 1100 of FIG. 30a, contacts 1103, 1104, 1105, 1106 are provided, which, similar to the sensor element 11 of FIG. 28, short-circuit the semicircular pieces of the respective sensor elements 11. Furthermore, these contacts 1103, 1104, 1105, 1106 are connected to one another in such a way that the straight sections of the four sensor elements 11 overall form an electrical parallel circuit.

In the Wheatstone bridge 1100 of FIG. 30b, contacts 1107, 1108, 1109, 1110 are provided which connect the beginning and the end of the spirals of the respective sensor elements 11 to one another. The contacts 1107, 1108, 1109, 1110 are arranged and electrically isolated from the individual spirals in such a way that the spirals of the sensor elements 11 as a whole form an electrical series circuit. With regard to the sensor elements 11 present in FIGS. 30a and 30b, the explanations relating to FIGS. 21 to 29 apply accordingly.

Further details on the type 1 revolution counter, which can be combined with one or more of the embodiments described here, are also described in EP 1 740 909 B1.

In further preferred embodiments it is provided that the first magnetic sensor 131 (FIG. 3), designed as a magnetic revolution counter according to particularly preferred embodiments, has the following configuration, which is also referred to below as "revolution counter type 2": a loop-like arrangement with N turns , having a GMR layer stack into which magnetic 180 ° domains can be introduced, stored and read out by measuring the electrical resistance, with stretched loop sections being provided at a predeterminable angle to the reference direction impressed in the sensor, which, preferably in the center, with contacts which can be acted upon by an electrical potential and which are in series or parallel to the reading of electrical

Resistance ratios of individual loop sections to further individual contacts provided in the areas of curvature of the loop-like arrangement are used, in particular the determined resistance ratios being a direct measure of the presence or absence of a magnetic one Domain in the corresponding loop section and thus provide a clear statement about the number of revolutions that have taken place.

Aspects of these embodiments ("revolution counter type 2") are described below with reference to FIGS. 10 to 20. Here, FIG. 10 shows aspects of a first embodiment of the

Revolution counter type 2, FIG. 11 shows a partial section according to FIG. 10 with different

Magnetization states in the presence or absence of a domain wall; FIG. 12 potential curves and hysteretic areas according to the first embodiment upon rotation of the external magnetic field; FIG. 13 shows a second embodiment of the type 2 revolution counter; 14 four different possible

Magnetization arrangements in a partial section according to FIG. 13; 15 shows potential profiles and hysteretic areas according to the second embodiment when the external magnetic field is rotated; 16 shows an advantageous circuit variant of the second embodiment of the revolution counter type 2; 17 shows exemplary sensor signals with readouts from both sides of a variant according to FIG. 16; 18 shows a first special contact configuration for a sensor according to FIG. 16; 19 shows a further embodiment of a variant according to FIGS. 16 and 18 in a diamond shape with further differentiated contact configurations, and FIG. 20 shows separate strip sections for the formation of reference signals.

Fig. 10 shows a first basic embodiment of the revolution counter type 2 with a

Domain wall generator 302 that generates magnetic domain walls. Details on the function of the domain wall generator 302 are also described in DE 10 2008 063 226 A1, cf. there e.g. FIG. 3 and paragraphs [0005], [0006], to which reference is hereby made. In preferred embodiments, the sensor 301 according to FIG. 10 is provided with two electrical contacts 306a and 306b which, in this example, jointly contact the strips 303b and 303d and 303a and 303c above or below. In preferred embodiments, these contacts 306a, 306b are each located in the middle of the elongated strips shown. An electrical potential is applied to the sensor 301 via these two contacts 306a, 306b. In the curvatures 304b, 304d of the spiral, further individual electrical contacts 307a, 307b are provided in the example on the left, each of which makes contact with one turn. The preferred one

The readout principle of this magnetic sensor wired in this way provides that a potential is applied to all windings via the common contacts 306a, 306b and that the potential drop is read out sequentially for each winding. This is preferably done via a multiplexer circuit which is customary per se and therefore not to be described further here, which successively establishes the connection to the individual contacts 307a, 307b in the bends from a common contact 306a or 306b.

The voltage drop is thus measured in the essentially elongated strip sections (303b or 303d, or 303a or 303c) (turn segments). In the context of preferred embodiments, the contacts 307a and 307b should preferably be designed so large in terms of area that the specific position of a domain wall within the curved strip area is meaningless. In principle exist in Each turn between the contacts 306a and 306b in the intermediate strip sections 303a and 303b, or 303c and 303d, exactly four magnetic states, as shown schematically in FIG. 11 for the first turn: 1. There is no magnetic domain wall in the curve 304a The two elongated strip sections 303a, 303b are magnetized in a clockwise direction (strip section 303a to the right and strip section 303b to the left, FIG. 11 a); 2. There is a magnetic domain wall in the curvature 304a, so that the elongated strip sections 303a and 303b are magnetized to the left (FIG. 11b); 3. There is no magnetic domain wall in the curvature 304a, the two elongated strip sections 303a and 303b are magnetized in the counterclockwise direction (Fig.

11c); 4. There is a magnetic domain wall in the curvature 304a so that the elongated strips 303a and 303b are magnetized to the right (FIG. 11d).

If the reference direction 308 in the sensor 301, as shown in FIG. 11, points to the right and the potential drop across the strip section 303a is measured, the following potential drops result for the

Magnetization states 1-4: 1. <50% (hereinafter L (= low)), since strip section 303a has a lower resistance than strip section 303b; 2. 50% (in the following also as M (= median), since the resistances of the strip sections 303a and 303b are equal; 3.> 50%, (in the following Fl (= high)), because the strip section 303a has a greater resistance as strip section 303b; 4. 50%, since the resistances of strip sections 303a and 303b are equal.

The deviation from the potential value 50% for magnetization states 1 and 3 depends on the size of the GMR effect and on the cosine of the angle between reference direction 308 and strip section 303a. The initial state of the sensor 301 is free of magnetic domain walls. This means that every turn is in the first magnetic state, so that the potential drop is <50%. (If the

Reference direction points in the other direction, the potential drop is> 50%.)

The preferred readout process of the sensor 301 provides that an electrical connection from contact 306a to contacts 307a and 307b is closed one after the other, controlled by a multiplexer, and the potential drop is measured in each case. If the potential drop of the first turn is <50% of the voltage between contacts 306a and 306b (voltage drop between contact 306a to contact 307a), sensor 301 is free of magnetic domain walls and thus in the initial state = zero revolutions. If the potential drop of the first turn = 50%, only the can

The magnetization state is 360 ° or 720 °. Which of the two states is present is determined by measuring the potential drop from contact 306a to contact 307b of the second turn. If the potential drop is <50%, then one revolution was counted, if the potential drop = 50%, two revolutions were counted.

Fig. 12 shows the above schematically. In Fig. 12a the signal of the outermost first turn (in Fig. 12 denoted by W1; voltage at contact 307a) and in Fig. 12b the signal of the second turn (W2; Voltage at contact 307b) plotted against the angle of rotation of the magnetic field. In the case of an ideal sensor, the signal in FIG. 12a would jump from the low low level to the middle 50% level at exactly 360 °. In the case of the second turn, the voltage swing in FIG. 12b would occur exactly with a further rotation of 360 °, that is to say with a magnetic field rotation of 720 °. Since the real sensor is hysteretic, the jumps take place depending on the direction of rotation at an angle> 360 ° or> 720 ° (magnetic field rotation in the spiral direction) or at an angle <360 ° or <720 ° (magnetic field rotation in the opposite direction of the spiral). As a result, it is advantageous if the sensor is not read out in one of the hysteretic angular ranges (310 or 310a) which are symbolized by rectangles in FIG. These angular ranges have a periodicity of 180 °. In the first hysteretic angle range 310a, the voltage signal can assume any value between the L level and the M level, and in the hysteretic angle ranges 310 any value between the L level and the H level.

In order to be able to read out the revolution counter at any time, a second sensor 301 is advantageously provided, which is positioned in the magnetic revolution counter rotated by 90 ° to the first sensor. This delivers a signal that is 90 ° out of phase, e.g. can then be read out when the first sensor is in a hysteretic angular range (310 or 310a). If the first sensor can be read out, the second sensor should not be read out, since it is then located in one of the hysteretic angle ranges (310 or 310a). Since the Flysterese is <90 °, there are also angular ranges in which both sensors can be read. The information about the angle provides e.g. a common angle sensor (not shown) to the readout electronics, which then decide which sensor may be read out.

As soon as a winding in a sensor 301 is domain wall-free, then the further inner windings are also domain-wall-free, since the magnetic domain walls are successively transported from the external beginning of the spiral, by the domain wall generator 302, to the end of the spiral. The preferred readout method of the sensor 301 provides that 1. the angle sensor is only read out in a controlled manner if the sensor 301 is not in a hysteretic angle range, 2. that the voltage signal of the first turn that connects to the domain wall generator is read out first 3 . and then successively the second turn up to the ninth turn is read out. That is, the

Windings of the sensor 301 are read from the outside inwards. The readout of the windings can be ended as soon as a winding supplies a low-level voltage signal. The low-level signal means that no domain wall has passed under the individual contact that has been read out, and thus no domain wall can be present in turns further inside. In Fig. 12 it is sufficient, for.

B. from reading out only the first turn at 270 ° magnetic field rotation, since this is in the low-level state.

At 450 ° magnetic field rotation, the first turn is in the median state, so that the second turn must also be read out, which is in the Lew level state at this angle. Only with one Magnetic field rotation of 720 °, both turns are in the M-state. Even this first embodiment of the type 2 revolution counter has several advantages over the known prior art: 1. By measuring the potential drop in each winding, the potential swing that can be measured there is independent of the number of revolutions. As a result, the number of countable revolutions is no longer limited to approx. Ten revolutions by the size of the GMR effect. The only limitation is manufacturing-related, because each turn lengthens the sensor 301 and thus increases the probability that the spiral is interrupted due to a defect. Spiral lengths that can be realized with good yield are made possible by sensors that could count 40-50 revolutions, but which, according to the teaching of EP 1 740 909 B1, could no longer or no longer be evaluated accurately enough. 2. Another advantage is that in further preferred embodiments there are no longer four spirals in a Wheatstone bridge

must be connected together, but due to the type of wiring, a spiral as a sensor alone, like a Wheatstone bridge, supplies a temperature-independent signal. 3. Another particular advantage is that the sensor 301 may be turned over. When using four spirals, which are connected in a Wheatstone bridge, one has the major problem that, in the event of an over-rotation, the domains located in the innermost spiral arm migrate to the ends of the spirals and disappear there. If this is done for all the spirals of a Wheatstone bridge, defined relationships are obtained again. If, however, this cannot be ruled out in principle, this does not take place on all four spirals, the undefined characteristic is changed and the sensor no longer delivers any valid signals. Therefore, with the Wheatstone bridge solution according to the state of the art, there should always be a mechanical stop that reliably prevents over-turning. However, the solution proposed here works even with only one spiral, so that a mechanical stop can therefore be dispensed with.

A second version of the revolution counter of type 2 provides that the elongated spiral is distorted into a symmetrical diamond, in which each turn consists of four strip segments, which are each arranged at a 90 ° angle one behind the other, and in which two strip segments as Voltage divider or Wheatstone half-bridge are coated. FIG. 13 shows such a sensor 311. The sensor 311 has a domain wall generator 312, on which in the example with N = 2 turns 4N + 1 = 9

Connect the strip segments (313a to 313i) with 4N = 8 bends (314a to 314h). In practical implementation, these curvatures have radii of curvature of the order of e.g. 1 pm, which is therefore not shown separately. Two comparatively large first contacts 316a and 316b are used to supply potential. In the example, individual contacts 317a and 317b are provided in the bends on the left, between the first contacts 316a and 316b, each of which makes contact with only one turn.

The sensor 311 is read out by the potential difference between one of the two large contacts 316a or 316b and the contacts 317a and 317b sequentially or in parallel (if, for example

Voltage potential measuring AD converters are provided) is determined to determine the potential drops in the Measure strip segments (313e or 313i). Preferred embodiments of this second embodiment of the type 2 revolution counter, described further below, provide that the strip segments 313a to 313i are of the same length between all electrical contacts.

In each turn there are the following four orders of magnetization, shown by way of example in FIG. 14, in the strip segments to the left between the contacts 316a and 316b (shown for 313d and 313e): 1. There is no magnetic domain wall in the curve 314d, the two elongated strip sections 313d, 313e are magnetized clockwise; 2. There is a magnetic domain wall in the curve 314d, so that the elongated strip sections 313d and 313e are magnetized to the left (FIG. 14b); 3. there is no magnetic domain wall in curvature 314d, both of them

elongated strip portions 313d and 313e are magnetized counterclockwise (Fig. 14c); 4. There is a magnetic domain wall in the curve 314d, so that the elongated strips 313d and 313e are magnetized to the right (FIG. 14d).

If the direction of magnetization of the hard magnetic layer 318 in the sensor 311, as indicated in FIG. 13, points to the right (at the preferred 45 ° angle to the strips) and the potential drop across the strip section 313e is measured, the following potential drops result for the

Magnetization states 1-4: 1. <50%, (L = low), since strip section 313e has a lower resistance than strip section (313d; 2. 50% (M = median), since the resistances of strip sections 313d and 313e are equal ; 3.> 50%, (Fl = high), since strip section 313e has a greater resistance than strip section 313d; 4. 50%, since the resistances of strip sections 313d and 313e are the same.

During one full revolution of the external magnetic field, a magnetic 180 ° domain wall runs through a full turn of the sensor 311 and thus switches the four magnetization states in this turn one after the other every 90 °. The preferred reading principle of this second embodiment of the

Type 2 revolution counter is similar to the first version of type 2 revolution counter. All turns are measured, preferably multiplexer-controlled, one after the other, starting with the first turn after the domain wall generator (contact 317a in curve 314d). The measurement can be ended in the turn in which the potential drop is <50% for the first time. Generalized for N-turn spirals for counting N revolutions is the counted number of revolutions, which is stored in a unique magnetization pattern in sensor 311 in this readout principle: number of revolutions = first number of turns (with low-level signal) - one or number of revolutions = N, if no low-level signal is detected.

15 shows this again schematically. In FIG. 15a the potential of the first turn (measured at contact 317a) and in FIG. 15b the potential of the second turn (measured at contact 317b) is plotted against the magnetic field rotation. In the case of an ideal sensor, the signal in FIG. 15a would for the first time be exactly Jump 360 ° from the low low level to the middle 50% level. In the second turn, the jump in FIG. 15b would take place for the first time after a further 360 ° with exactly 720 ° magnetic field rotation. After the first signal jump, there is another signal jump every 90 °, since the magnetic domain wall is transported into the next bend, whereby the strip lying in between is remagnetized. With an ideal sensor, there would be signal jumps in the first turn at 450 ° magnetic field rotation from the 50% level to the high level, at 540 ° magnetic field rotation from the high level to the 50% level and at 630 ° magnetic field rotation from the 50% level in the low level. The signal is therefore periodic from the first rotation (360 °) with a periodicity of 360 °. In the second turn, the signal is periodic from the second turn (720 °). Since the real sensor switches hysteretically, the first jumps take place, depending on the direction of rotation, at an angle> 360 ° or> 720 ° (magnetic field rotation in the spiral direction) or at an angle <360 ° or <720 ° (magnetic field rotation in the opposite direction to the spiral). As a consequence, the sensor 311 should preferably not be read out in the hysteretic angle ranges in which it switches from the low level to the 50% level.

In FIG. 15, the hysteretic angular ranges are symbolized by rectangles 320, 321. In order to be able to read out the revolution counter at any time, either a second sensor 311 is required, which is positioned in the magnetic revolution counter rotated by 90 ° to the first sensor, or, as shown in FIG. 16, the sensor 311 is preferably with further individual contacts (317c and 317d) in the bends (314b and 314f). These two solutions deliver two signals out of phase by 180 °.

FIG. 17 shows schematically the sensor signals when the sensor 311 according to FIG. 16 is read out on both sides. In Fig. 17a) and Fig. 17b) signals of the first turn and in Fig. 17c) and Fig. 17d) signals of the second turn are plotted: - Fig. 17a) shows the voltage signal of the contact 317c, in which the first signal jump at 180 ° takes place, - Fig. 17b) shows the voltage signal of contact 317a phase-shifted by 180 °, in which the first signal jump occurs at 360 °, - Fig. 73c) shows the voltage signal of contact 317d, in which the first signal jump at 540 ° takes place, - Fig. 17d) shows the voltage signal of the contact 317b phase-shifted by 180 °, in which the first signal jump occurs at 720 °. The signal from contact 317d is in phase with the signal from contact 317c from 540 ° magnetic field rotation and the signal from contact 317b is in phase with the signal from contact 317a from 720 ° magnetic field rotation. Due to the phase shift of 180 ° between the voltage signals from the left contacts (317a and 317b) and the voltage signals from the right contacts (317c and 317d), this sensor can advantageously always be read out without the need for a separate second sensor.

The read-out principle of the sensor 311 examines whether a threshold value 319 between the low level state and the 50% level (median level) is exceeded. The low-level signal means that no domain wall has passed under the individual contact that has been read out, and thus no domain wall further internal turns are present. The voltage signal of this contact must not be read out only if the magnetic field rotation is in a hysteretic angular range 320 in which the voltage signal switches from the low-level state to the M-level state. Otherwise, this voltage signal may always be read out, even in the hysteretic angle ranges 321 in which the voltage signal switches from the M level to the high level. Since all voltage values between M-Level and H-Level are above the visual threshold value 319 to be detected, the relevant information that a domain wall has passed the relevant individual contact is always given. The phase shift of the voltage signals between left and right contacts in sensor 311 thus enables the voltage signals to be read out at any time either via the left or right individual contacts. This means that the magnetic revolution counter only needs one sensor 311 with individual contacts on the left and right, instead of two sensors 311 with individual contacts either on the left or right in sensor 311 or with two sensors 301 according to the first version of the revolution counter of type 2 (Fig. 10 ).

Another advantage of this second version of the type 2 revolution counter is that the 180 ° domain wall runs into the next strip every 90 ° magnetic field rotation. As a result, the hysteresis intrinsically present in the real sensor becomes narrower than in the sensor according to the first embodiment of the invention. In this solution, the magnetic domain wall only runs in the adjacent strips for every 180 ° magnetic field rotation, so that the hysteresis is greater for the same magnetic field. As a result, the upper half of the theoretically usable working window Hmin to Hmax in which the sensor counts without errors can be used in the second version of the type 2 revolution counter and only the upper third in the first version. Hmin denotes the magnetic field at which the domain walls are transported through the spiral without errors, i.e. H. not be unintentionally pinned to defects. Hmax is the magnetic field at which a magnetic domain wall is not yet formed in an uncontrolled manner in the strip.

In FIG. 18, an embodiment of the sensor is shown in which the individual contacts 337a and 337b are designed such that the long straight webs in between have the same length for all parts of the spiral. This has the advantage that the current load is identical for all branches. 18 is self-explanatory and therefore requires no further explanation.

Another embodiment shown in FIG. 19 provides that the diamond described above has at least an angle other than 90 ° within a turn.

Preferred configurations provide symmetrical rhombuses with alternating obtuse and acute angles, for example 25 ° / 155 ° / 25 ° / 155 °. The preferred embodiment of these variants of the type 2 revolution counter provides that the reference direction 338 runs along the long side of the diamond and the individual contacts are positioned at the obtuse angles. This makes better use of the GMR effect than with the second solution (90% of the GMR stroke is available at an acute angle of 25 ° instead of 71% at an angle of 90 °). Due to the angle difference between acute and obtuse angles in the diamond, a "geometric hysteresis" is built into the sensor signal, which corresponds to the difference between the two angles. The sensor in FIG. 19 has the special feature that contacts 336a and 336b of FIG 18 are now carried out individually for each loop. This gives the user the option of designing either the electrodes at 336a and 336b or 337a or 337b as common electrodes. This does not lead to a fundamentally different characteristic and can also be used with the one shown in FIG The solution shown is used.

Another embodiment of the revolution counter of type 2, as shown in FIG. 20, provides that in addition to the sensor one or more individual strips 339a and 339b separated from the rest of the spiral are provided, which in the example are each parallel to strip 333a and 333a 333b and / or 333c and 333d are positioned. In the absence of a connection to the domain wall generator 332, these strips cannot be reversed, i.e. H. the magnetization of the sensor layer in these strips always points in the same direction. As a result, the center contact exhibits a potential drop of 50% when the potential is applied to it at its ends, like the sensor 31 or 311 in the previous examples. This signal can serve as a reference signal when measuring the potential drops in the individual windings of the sensor.

Further variants of the type 2 revolution counter provide that, instead of the sensor shown in FIG. 10, a variant is used in which individual contacts are used in all on both sides of the spiral

Curvatures are provided. Similar to the second variant with single contacts on both sides, this sensor delivers two signals phase-shifted by 180 °. These signals are useful if you want to use a 180 ° angle sensor instead of a 360 ° angle sensor.

The type 2 revolution counter 301, 311, 331 described with reference to FIGS. 10 to 20 can - as an alternative or in addition to using the type 1 revolution counter (described above with reference to FIGS. 21 to 30b) - in particular as a first magnetic sensor 131 (Fig. 2) can be used for the device 100, 100a, 100b, 100c, 100d according to the embodiments. For example, the revolution counter 301, 311, 331 of type 2 can have a radial magnetic field rotating relative to the sensor device 130 (FIG. 2), as can be generated by the magnet arrangement 120 (FIG. 2) (e.g. with axial movement of the sensor device 130) , detect and count the corresponding revolutions, from which information about a position of the sensor device 130 along the z-coordinate of the carrier 110 can be determined. If the revolution counter 301, 311, 331 of type 2 (in the form of the sensor 131) is moved along the z-coordinate of the carrier 110, this is indicated by the revolution counter 301, 311, 331 in the form of counted (relative) revolutions of the magnetic field, whose radial component (s) change along the z coordinate of the carrier 110, is detected. This recorded number of revolutions also remains obtained in the revolution counter 301, 311, 331 when the device 100 is deactivated, or when a defect occurs in the power supply of the device.

Further details on the type 2 revolution counter, which can be combined with one or more of the embodiments described here, are also described in DE 10 2008 063 226 A1.

FIG. 31 schematically shows a simplified flow diagram of a method according to a

Embodiment. In step 200 the sensor device 130 (Figs. 2, 3) is moved along the longitudinal direction 112 of the carrier 110, e.g. using the sliding guide 130a, 130b. In step 202, an output signal of the first magnetic sensor 131 and in step 204 an output signal of the second magnetic sensor 132 is determined and evaluated by means of the evaluation unit 136 (FIG. 3), in particular in order to determine the position of the sensor device 130 along the z coordinate determine. The device 100, 100a, 100b, 100c, 100d can advantageously be used to provide a displacement transducer or position transmitter.

FIG. 32A schematically shows a device 100e according to further preferred embodiments in partial cross section with a view in the longitudinal direction, similar to the configuration according to FIG. 1. In contrast to FIG. 1, the device 100e from FIG. 32A does not have a carrier 110, but an essentially one. hollow-cylindrical magnet element 120, e.g. itself is designed to be sufficiently dimensionally stable and / or designed for attachment to a target system (not shown in FIG. 32A) for the device 100e.

For example, in further preferred embodiments it can be provided that the magnetic element 120 is adapted to a corresponding, at least regionally hollow-cylindrical or to the geometry of the

Magnet element 120 adapted holder or the like to use. In further preferred embodiments, the magnetic element 120 can be designed to be stationary and the sensor device 130 can be designed to be movable relative thereto (along the longitudinal axis, that is to say perpendicular to the plane of the drawing in FIG. 32A).

Alternatively, the sensor device 130 can also be designed to be stationary and the magnetic element 120 to be movable relative to it (along the longitudinal axis, that is, perpendicular to the plane of the drawing in FIG. 32A), which simplifies the electrical connection of the sensor device 130. Alternatively, both the

Sensor device 130 and the magnetic element 120 can be designed to be movable (along the longitudinal axis).

FIG. 32B schematically shows a side view of a device 100f according to further preferred embodiments. In the present case, a (in particular single) magnetic element 122 'is provided which realizes the function of the magnet arrangement 120 according to the embodiments and which is arranged on a surface 2000a of a target system 2000 (eg machine tool), in particular arranged in a stationary manner, i.e. fixed. In the present case, the sensor device 130 is designed and arranged to be movable (back and forth) relative to the magnetic element 122 ′ along the longitudinal axis 112 (horizontal in FIG. 32B), cf. the block arrows A1, A2. FIG. 32C schematically shows a side view of a device 100g according to further preferred embodiments. In the present case, a (in particular single) magnet element 122 'is provided which realizes the function of the magnet arrangement 120 according to the embodiments and which is arranged on a surface 2000a' of a target system 2000 '(eg part of a machine tool). In the present case, the target system 2000 '(together with the magnetic element 122' arranged thereon) is designed and arranged to be movable (to and fro) along the longitudinal axis 112 (horizontal in FIG. 32C), cf. the block arrows AT, A2 ', and the sensor device 130 is in the present case stationary, for example arranged or fixed on a further (preferably stationary) component 2000 ″ of the target system. This enables a particularly simple electrical connection of the sensors 131, 132, in which in particular no cables or signal lines (not shown) have to be moved.

Claims

1. Device (100; 100a; 100b; 100c; 100d; 100e; 10Of), in particular sensor device, having a magnet arrangement (120) extending along a longitudinal axis (112) for generating a magnetic field, which is designed so that it controls the magnetic field with at least one first radial magnetic field component (Bx) which changes along the longitudinal axis (112), and a magnetic sensor device (130) which is arranged movably along the longitudinal axis (112) relative to the magnet arrangement (120) and which has a first magnetic sensor (131) and a second magnetic sensor (132).

2. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to claim 1, wherein the device (100;

100a; 100b; 100c; 100d; 100e; 100f) has a carrier (110; 2000) for receiving the magnet arrangement (120).

3. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to claim 2, wherein the carrier (110) is formed essentially as a hollow cylinder, and wherein the magnet arrangement (120) is arranged radially inside the carrier (110) .

4. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein a) the magnet arrangement (120) can be statically arranged, in particular on one or the carrier (110) and / or on a target system (2000), and wherein in particular the sensor device (130) is movable (A1, A2) relative to the magnet arrangement (120), in particular at least along the longitudinal axis (112), or b) the sensor device (130) can be statically arranged, in particular fastened to a target system (2000 "), and in particular the magnet arrangement (120) is movable (AT, A2 ') relative to the sensor device (130), in particular at least along the longitudinal axis (112), or e) the magnet arrangement (120) is movable, in particular at least along the longitudinal axis (112), and wherein the sensor device (130) is also movable (A1, in particular at least along the longitudinal axis (112)) relative to the magnet arrangement (120) A2) is.

5. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first magnetic sensor (131) has a first sensor type, and wherein the second magnetic sensor (132) has a second sensor type which is different from the first type of sensor.

6. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the magnet arrangement (120) is designed so that it the magnetic field with the at least one first radial magnetic field component (Bx) changing along the longitudinal axis (112) and a second radial magnetic field component (By) changing along the longitudinal axis (112), which is preferably perpendicular to the first radial magnetic field component (Bx).

7. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first radial magnetic field component (Bx) and / or the second radial magnetic field component (By) are at least partially along the longitudinal axis ( 112) changes sinusoidally or cosinusoidally.

8. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first radial magnetic field component (Bx) and / or the second radial magnetic field component (By) are at least partially along the longitudinal axis ( 112) does not change sinusoidal or non-cosinusoidal.

9. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first radial magnetic field component (Bx) and / or the second radial magnetic field component (By) are at least partially along the longitudinal axis ( 112) changes at least approximately linearly.

10. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of claims 3 to 9, wherein the magnet arrangement (120) is arranged on a radial inner surface (110a) of the carrier (110), wherein in particular the magnet arrangement (120) covers the radial inner surface (110a) of the carrier (110) to at least about 40 percent, further in particular to at least about 90 percent, particularly preferably to at least about 95 percent.

11. The device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the magnet arrangement (120) has a magnetizable or magnetized material that is so, in particular differently along the longitudinal axis (112) , is magnetized that the changing along the longitudinal axis (112) changing first and / or second radial

Magnetic field component (Bx, By) results.

12. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the magnet arrangement (120) has at least one magnet element (122, 124; 122 ') with an essentially band-shaped basic shape.

13. The device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to claim 12, wherein the at least one magnetic element (122, 124) is at least approximately helical along one or the radial inner surface (110a) of the carrier (110 ) is arranged.

14. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of claims 2 to 13, wherein the carrier (110) has a material and / or a coating with a material which has a relative permeability of has about 100 or more, in particular about 1000 or more, further in particular about 2000 or more.

15. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first magnetic sensor (131) and the second magnetic sensor (132) both in the region of the longitudinal axis (112), in particular on the longitudinal axis (112) or on a virtual straight line that is parallel to the longitudinal axis (112).

16. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first magnetic sensor (131) and the second magnetic sensor (132) are arranged one behind the other on the longitudinal axis (112) .

17. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the first magnetic sensor (131) is a magnetic revolution counter, which is designed in particular to measure an integral multiple of a relative revolution of the magnetic sensor (131) in relation to the at least one first radial magnetic field component (Bx).

18. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein the second magnetic sensor (132) is a Hall sensor which is designed in particular to have the at least one first radial To determine the magnetic field component (Bx), wherein the second magnetic sensor (132) in particular is further designed to determine the first radial magnetic field component (Bx) and the second radial magnetic field component (By).

19. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of the preceding claims, wherein an evaluation unit (136) is provided which is designed to

To evaluate output signals of the first and second magnetic sensors (131, 132).

20. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to claim 19, wherein the evaluation unit (136) is designed to determine a position of the sensor device (130) in relation to one of the Longitudinal axis (112) corresponding coordinate (z) of the magnetic element (120) and / or one or the carrier (110) to be determined.

21. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of claims 17 to

20, wherein the first magnetic sensor (131) designed as a magnetic revolution counter has: a loop-like arrangement provided with N windings, having a GMR layer stack, can be introduced into the 180 ° magnetic domains, stored and read out by measuring the electrical resistance are, with stretched loop sections being provided at a predeterminable angle to the reference direction (38; 318) imprinted in the sensor, which are provided, preferably in the center, with contacts (306a, 306b; 316a, 316b; 336a, 336b) to which an electrical potential can be applied which are used in series or parallel to read electrical resistance ratios of individual loop sections to further individual contacts (37a, 37b; 317a, 317b; 337a, 337b) provided in curved areas of the loop-like arrangement, with the determined resistance ratios in particular being a direct measure of the presence or absence a magnetic domain in the corre related

Loop section and thus provide a clear statement about the number of revolutions that have taken place.

22. Device (100; 100a; 100b; 100c; 100d; 100e; 100f) according to at least one of claims 17 to

21, wherein the first magnetic sensor (131) designed as a magnetic revolution counter has: at least one sensor element (11) with a layer structure (20) which without a

Energy supply is suitable for a change in the sensor element (11)

Causing magnetization when a magnetic field is moved past the sensor element (11), as well as to store several such changes, the sensor element (11) having a spiral structure which is provided with the layer structure (20).

23. A method for operating a device (100; 100a; 100b; 100c; 100d; 100e; 100f), in particular a sensor device, having a device extending along a longitudinal axis (112)

Magnet arrangement (120) for generating a magnetic field, which is designed such that it generates the magnetic field with at least one first radial magnetic field component (Bx) changing along the longitudinal axis (112), and one relative to the magnet arrangement (120) along the longitudinal axis ( 112) movably arranged magnetic sensor device (130) which has a first magnetic sensor (131) and a second magnetic sensor (132), the method comprising the following step: moving (200) the sensor device (130) along the longitudinal axis (112) ) relative to the magnet arrangement (120).

24. The method according to claim 23, wherein the step of moving (200) comprises: a) fixing the magnet arrangement (120) and moving the sensor device (130) relative to the magnet arrangement (120) along the longitudinal axis (112), b) fixing the Sensor device (130) and moving the magnet arrangement (120) relative to the sensor device (130) along the longitudinal axis (112), c) moving the magnet arrangement (120) and moving the sensor device (130) relative to one another along the longitudinal axis (112).

25. The method according to at least one of claims 23 to 24, wherein the device (100; 100a; 100b;

100c; 100d; 100e; 100f) has an evaluation unit (136) which evaluates output signals from the first and second magnetic sensors (131, 132).

26. The method according to claim 25, wherein the evaluation unit (136) has a, in particular relative, position of the sensor device (130) in relation to a coordinate (z) corresponding to the longitudinal axis (112), in particular of the magnetic element (120) and / or of the carrier (110), depending on the

Output signals of the first and second magnetic sensors (131, 132) determined.

27. The method according to at least one of claims 23 to 26, wherein the first magnetic sensor (131) and the second magnetic sensor (132) on the longitudinal axis (112) or on a virtual straight line that is parallel to the longitudinal axis (112), are arranged, and wherein the evaluation unit (136) is designed to take into account an axial offset of the two magnetic sensors (131, 132) to one another along the longitudinal axis (112), in particular to take into account when determining the position of the sensor device (130).

28. The method according to at least one of claims 23 to 27, wherein the first magnetic sensor

(131) a magnetic revolution counter is used, which is designed in particular to determine an integral multiple of a relative revolution of the magnetic sensor (131) in relation to the at least one first radial magnetic field component (Bx).

29. The method according to at least one of claims 23 to 28, wherein the second magnetic sensor

(132) a Hall sensor is used which is designed in particular to determine the at least one first radial magnetic field component (Bx), the second magnetic sensor (132) in particular being designed to detect the first radial magnetic field component (Bx) and determine the second radial magnetic field component (By).

30. System comprising a movable element (2000 ‘) and at least one device (100; 100a;

100b; 100c; 100d; 100e; 100f) according to at least one of claims 1 to 22, wherein at least one component (122 ') of the magnet arrangement (120), in particular a magnet element (122') of the Magnet arrangement (120) on which the movable element (2000 ') is arranged, and wherein in particular the magnetic sensor device (130) is arranged in a stationary manner.

31. Use of the device according to at least one of claims 1 to 22 and / or

Method according to at least one of Claims 23 to 30 and / or the system according to Claim 30 in a displacement transducer.