EP3912183A1 - Detecteur de particules elementaires - Google Patents
Detecteur de particules elementairesInfo
- Publication number
- EP3912183A1 EP3912183A1 EP20707305.7A EP20707305A EP3912183A1 EP 3912183 A1 EP3912183 A1 EP 3912183A1 EP 20707305 A EP20707305 A EP 20707305A EP 3912183 A1 EP3912183 A1 EP 3912183A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive
- dynode
- sensors
- grid
- avalanche
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 52
- 238000012545 processing Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 32
- 238000005259 measurement Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 239000003989 dielectric material Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 5
- 238000000576 coating method Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 238000001465 metallisation Methods 0.000 description 13
- 239000004020 conductor Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000010200 validation analysis Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000005433 particle physics related processes and functions Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002661 proton therapy Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/30—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
Definitions
- the invention relates to an elementary particle detector and a method for detecting elementary particles.
- the invention also relates to a medium for recording information for the implementation of this method of detecting elementary particles.
- Known detectors of elementary particles comprise:
- a cathode and a conductive grid capable of creating a potential difference capable of accelerating electrons in the direction of the conductive grid, the conductive grid being capable of being crossed by the accelerated electrons,
- this dynode being capable, for each elementary particle, of producing an avalanche of secondary electrons, this dynode comprising for this purpose several channels, each channel comprising an emissive material, this emissive material being able, in response to an impact of an electron, to generate, on average, more than one secondary electron,
- this reading plate comprising:
- the first sensors capable of measuring the quantity of electric charges on the electrodes
- a processing unit capable of determining the location of the avalanche of electrons from the quantity of electric charges measured by the first sensors and from the known location of the electrodes.
- Such detectors work correctly to determine a position of the point of impact of the elementary particle and an instant of arrival of this elementary particle. However, it is desirable to improve the precision on the measurement of this position and / or the time of arrival.
- the invention therefore aims to provide an elementary particle detector in which the precision of the measurement of the position of the point of impact and / or the precision of the measurement of the instant of arrival of the elementary particle are improved. It therefore relates to such an elementary particle detector according to claim 1.
- the subject of the invention is also a method for detecting an elementary particle using the claimed detector.
- the invention also relates to an information recording medium, readable by an electronic computer, this recording medium comprising instructions for the execution of the method of detecting elementary particles, when these instructions are executed by the electronic computer.
- FIG. 1 is a schematic illustration, in vertical section, of a first embodiment of an elementary particle detector
- FIG. 2 is a schematic and partial illustration in vertical section of a channel of a dynode of the detector of Figure 1;
- Figures 3 and 4 are schematic illustrations of different possible positions of the channels of an upper dynode relative to the channels of a lower dynode in a detector such as the detector of Figure 1;
- FIG. 5 is a schematic illustration of a peak loads that can be measured by a reading plate of the detector of Figure 1;
- FIG. 6 is a schematic illustration of a peak loads that can be measured on a conductive grid of the detector of Figure 1;
- FIG. 7 is a schematic illustration and in top view of a conductive grid of the detector of Figure 1;
- FIG. 8 is a partial schematic illustration, in vertical section, of a reading plate of the detector of Figure 1;
- Figure 9 is a schematic illustration, partial and in top view, of the arrangement of different electrodes, relative to each other, of the reading plate of Figure 8;
- FIG. 10 is a flowchart of a method for detecting elementary particles using the detector of Figure 1;
- FIG. 11 is a schematic and partial illustration, in vertical section, of another embodiment of a reading plate
- FIG. 12 is a flowchart of a method for detecting elementary particles using the reading plate of Figure 11;
- FIG. 13 is a schematic illustration and in top view of another embodiment of a conductive grid for the detector of Figure 1;
- FIG. 14 is a schematic illustration, partial and in top view, of another possible arrangement of the various electrodes of the reading plate.
- Figure 1 shows a detector 2 of elementary particles.
- the detector 2 is a detector known by the term of "microchannel wafer detector” or under the English term of "MicroChannel Plate Detector”.
- the elementary particles to be detected are photons.
- the detector 2 successively comprises, going from top to bottom, the following different elements:
- the cathode 4 is made of a material which is also electrically conductive or resistive.
- the cathode 4 is connected to a terminal 20 of a power source 22 which delivers a potential HV1.
- Cathode 4 is generally made of an emissive material which generates at least one electrons when an elementary particle strikes it. In the particular case where the elementary particle is a photon, this cathode is known under the term of “photocathode”.
- electrically conductive material or “conductive material” is meant here a material whose resistivity at 20 ° C is less than 10 2 Qm and, preferably, less than 10 5 Qm or 10 6 Qm Generally, the resistivity of an electrically conductive material at 20 ° C is greater than 10 10 Qm
- electrically resistive material or “resistive material” is meant here a material whose resistivity at 20 ° C is less than 10 12 Qm and, preferably, less than 10 6 Qm or 10 4 Qm
- the dynode 6 is located just under the cathode 4.
- the dynode 6 is a microchannel plate known by the acronym MCP ("Micro-Channel Plate"). It is crossed vertically, right through, by several million channels often called “microchannels”. In Figure 1, only a few channels 24 are schematically shown. In this embodiment, each channel extends along a vertical axis 26.
- the density of the channels 24 per unit of horizontal area is typically greater than one thousand channels per square centimeter or 10,000 channels per square centimeter or 100,000 channels per square centimeter.
- the density of channels per square centimeter is very important. For example, this density is greater than 1 million channels per square centimeter or greater than 3 million channels per square centimeter.
- the average diameter Dm24 of the channels 24 is very small, that is to say, generally less than 100 ⁇ m or 50 ⁇ m or 10 ⁇ m. This diameter Dm24 is also usually greater than 10 nm or 50 nm.
- average diameter is meant the unweighted or arithmetic average of the diameters of all the cross sections of the channel 24 along its axis 26.
- the cross sections are horizontal.
- diameter refers to the hydraulic diameter of this cross section.
- the cross section of the channel 24 is circular. In addition, this cross section is constant over the entire length of the channel 24.
- the length of the channel 24 in the Z direction is conventionally greater than its diameter Dm24 or 2 * Dm24 or 10 * Dm24. In this description, the symbol "*" denotes the multiplication operation. This length is also usually less than 500 * Dm24 or 100 * Dm24 or 50 * Dm24.
- the shortest horizontal distance between the axes 26 of two channels 24 located next to each other is usually less than 4 * Dm24 or 2 * Dm24.
- Each channel 24 comprises:
- the upper part of the vertical walls of the channel 24 consists of an emissive coating 32 ( Figure 2).
- Figure 2 When the coating 32 forms only part of the vertical wall of the channel 24, it typically forms more than a quarter or more than a third of the height of this vertical wall.
- the emissive coating 32 extends the entire length of the channel 24.
- the coating 32 is made of an emissive material which, on average, when struck by an electron generates in response more than one secondary electron and preferably more than 1.5 or 2 secondary electrons.
- the emissive material used to make the coating 32 is chosen from the group consisting of emissive materials listed between rows 6 to 44 of column 10 of US6384519B1.
- the dynode 6 comprises a matrix 34 in which these channels are hollowed out 24.
- the matrix 34 can be made of a resistive material or a dielectric material.
- dielectric material is meant here a material whose resistivity at 20 ° C is greater than or equal to 10 12 Qm and, preferably, greater than or equal to 10 14 Qm or 10 16 Qm Generally, the resistivity of a material dielectric at 20 ° C is less than 10 28 Qm
- a resistive material is a material whose resistivity is between those of dielectric materials and conductive materials.
- the grid 8 in combination with the cathode 4 generates an own electric field to accelerate downwards, the electrons located and generated inside each of the channels 24.
- the electric field generated is between 1 kV / cm 50 kV / cm.
- the grid 8 is made of a conductive material, such as a metal. It is connected to a terminal 36 of the source 22 which delivers a potential HV2 greater than the potential HV1.
- the difference between the potentials HV1 and HV2 is, for example, greater than 10 volts or 100 volts and generally less than 5,000 volts or 2,000 volts.
- the grid 8 is also, as far as possible, transparent to the electrons accelerated and expelled by the outputs 30 of the channels 24.
- Such a grid is known under the name of “Frisch grid” or “Frisch grid” in English.
- the transparency rate of a conductive grid is defined as being the value, expressed in%, of the ratio between the number of electrons passing through this grid divided by the number of electrons projected onto this grid. This transparency rate is generally between 30% and 95% or between 45% and 90%. For example, here it is greater than 60% or 70%.
- the grid 8 is pierced with a multitude of small holes 38, of which only a small number is shown schematically in Figure 1.
- the diameter D38 of the holes 38 is less than 50 ⁇ m or 100 ⁇ m .
- the cumulative areas of the cross sections of the holes 38 represent more than 30% or 45% and, preferably, more than 60% or 70% of the smallest surface of the conductive grid containing all these. holes 38.
- the thickness of the grid 8 is small compared to the diameter D38 of the holes, that is to say that the thickness of the grid is generally less than the diameter D38 or 0.5 * D38.
- the impedance of the grid 8 is uniform.
- the impedance of the grid is uniform if the impedance between any two points A and B of the grid 8, horizontally spaced from each other by a constant horizontal distance, is systematically included between 0.95Z AB and 1.05Z AB and this whatever the chosen horizontal distance, where Z AB is a constant.
- Dynode 10 is identical to dynode 6 except that:
- the diameter Dm40 of these channels 40 is different from the diameter Dm24.
- the dynode 10 is positioned relative to the dynode 6 so that the electrons which escape from the output 30 of a channel 24 are distributed in several channels 40.
- the orthogonal projection on a horizontal plane containing the inlets 42, the cross section of the outlet 30 of each channel 24 covers, at least partially, at least two inlets 42. Thanks to this, the electrons which escape from the output 30 are distributed in several of the channels 40 of the dynode 10.
- the diameter Dm40 is less than the diameter Dm24 and, preferably, less than 0.8 * Dm24 or 0.5 * Dm24.
- This embodiment is illustrated in figure 3.
- the orthogonal projection of the outlet 30 of a channel 24 on the horizontal plane containing the inlets 42 is represented by a dotted circle which bears the same reference as the outlet. 30.
- the diameter Dm40 is equal to or greater than the diameter Dm24.
- the channels 40 are offset horizontally with respect to the channels 24. By way of illustration, this is shown in FIG. 4 in the particular case where the diameters Dm40 and Dm24 are equal.
- the grid 12 is identical to the grid 8, except that the holes bear the reference numerals 50.
- the diameter D50 of the holes 50 is not necessarily equal to the diameter D38. Indeed, if necessary, it is adapted to obtain a degree of transparency greater than 60% or 80%.
- the diameter D50 is adapted according to the diameter Dm40.
- the grid 12 is connected to a terminal 52 of the source 22 which generates a potential HV3.
- the potential HV3 is greater than the potential HV2 to create an electric field in the channels 40 which makes it possible to accelerate the secondary electrons towards the grid 12.
- the potential HV3 is set to generate an electric field identical to that generated in the channels. 24.
- the spacer 14 separates the dynode 10 from the reading plate 16. More precisely, it leaves an empty space 56 between the outlets 42 of the channels 40 and a horizontal outer face 60 of the plate 16. This empty space 56 is crossed by the avalanche of secondary electrons which emerge from the outputs 44 of the dynode 10 when an elementary particle is detected. This space 56 increases the spatial dispersion of these secondary electrons, in particular, in the horizontal direction. Thus, the area of the impact zone of the secondary electrons of the avalanche on the outer face 60 is greater in the presence of the spacer 14 than in its absence.
- the spacer 14 is arranged so that the distance between the horizontal plane containing the outlets 44 and the outer face 60 is greater than 10 ⁇ m or 15 ⁇ m and generally less than 300 ⁇ m or 200 ⁇ m.
- the association of the cathode 4, of the dynode 6, of the grid 8, of the dynode 10 and of the grid 12 forms an electrical charge amplifying device. More precisely, each time an electron is generated by the cathode 4 and enters one of the channels 24, the probability is great that it strikes the coating 32, which, in response, results in the generation, on average of more of a secondary electron. These secondary electrons are in turn accelerated and hit the coating 32 again, which increases the number of secondary electrons and causes what is called an avalanche of secondary electrons. The secondary electrons penetrate inside the channels 40 and the same phenomenon of secondary electron reduction occurs in these channels 40.
- each elementary particle which strikes the cathode 4 causes the appearance of an avalanche of secondary electrons which is then projected onto the outer face 60 of the plate 16.
- the location of this avalanche of secondary electrons on the outer face 60 is representative of the position of the point of impact of the elementary particle on the cathode 4. It is therefore necessary to determine the location of the avalanche of secondary electrons in order to be able to deduce therefrom the position of this point of impact.
- Plate 16 makes it possible, in particular, to determine the location of this avalanche of secondary electrons in a horizontal plane.
- the plate 16 comprises in particular:
- Each strip 62 is electrically isolated from the other conductive strips 62 present in the plate 16.
- Each strip 62 extends mainly horizontally from a distal end to a proximal end.
- the distal and proximal ends of each band 62 are located on one edge of plate 16. The arrangement of bands 62 is described in more detail with reference to Figures 8 and 9.
- the bands 62 are located on the outer face 60, they are directly exposed to the secondary electrons of each avalanche. Thus, when the electrons of an avalanche reach a band 62 this generates on this band a peak of characteristic charges.
- a peak 64 of charges is schematically represented on the graph of FIG. 5.
- the x-axis represents time and the y-axis represents the quantity of charges. electric.
- This peak 64 begins at an instant ti and ends at an instant t 2 .
- the instants and t 2 correspond to the instants when the quantity of charges on the strip 62, respectively, exceeds and falls below a predetermined threshold. Indeed, the secondary electrons of the same avalanche do not all arrive at the same time and at the same place on band 62 because they have not all followed the same path.
- each strip 62 is connected to a respective input of a sensor 70 of electric charges.
- the detector 2 comprises a set 72 of sensors which comprises at least as many sensors 70 as there are bands 62.
- the sensor 70 is capable of measuring a physical quantity representative of the quantity of electric charges present on the strip 62 to which it is connected. In this embodiment, the sensor 70 rapidly measures the quantity of electric charges present on this conductive strip 62.
- the measurement of the quantity of electric charges on a strip can consist: - signaling the crossing of the predetermined threshold by the quantity of electric charges as long as this threshold is crossed, or
- the detector 2 also includes a processing unit 80 connected to each of the sensors 70.
- the processing unit 80 is capable of acquiring the measurements from the sensors 70. Then, the unit 80 determines automatically, from the measurements sensors 70 and the known arrangement of conductive strips 62, the location of the second secondary electron avalanche. From the location of the second avalanche, the unit 80 establishes the position of the point of impact between the elementary particle and the cathode 4.
- the processing unit 80 comprises:
- a programmable microprocessor 84 capable of executing instructions stored in the memory 82.
- the memory 82 comprises the instructions and the data necessary for the execution of the method of FIG. 10.
- the detector 2 comprises a set 90 of one or more sensors 92 each capable of measuring an instant at which the avalanche of secondary electrons crosses the grid 8. Subsequently, this instant is called “crossing instant. ".
- each of these sensors is electrically connected to the grid 8.
- the assembly 90 here comprises four sensors 92 individually designated by the references 92a to 92d in FIG. 7. To simplify FIG. 1, only one of these sensors 92 is shown. in this figure. In this first embodiment, each sensor is for example connected to a respective point on the periphery of the grid 8.
- the connection points of the sensors 92a to 92d are denoted, respectively, P 92a to P 92d .
- these points P 92a to P 92d are uniformly distributed over the periphery of the grid 8.
- Each sensor 92 is designed to measure the characteristic electrical signal which appears when the gate 8 is crossed by an avalanche of secondary electrons. More precisely, when an avalanche of secondary electrons crosses the grid 8, this causes, by electromagnetic induction, the appearance of a peak of charges in the grid 8.
- a peak 94 of charges is represented on the graph of the Figure 6. Peak 94 starts at time t 3 and ends at time t 4 . For example, the instants t 3 and t 4 are the instants when the quantity of electric charges measured by the sensor 92, respectively, exceeds and then falls below a predetermined threshold. It will be noted that peak 94 is much narrower than peak 64 and that therefore times t 3 and t 4 are closer to each other than times ti and t 2 . Indeed :
- the impedance of the grid 8 is much more uniform than the impedance of the conductive strips 62, and
- the secondary electrons are less spatially dispersed than when this avalanche hits the plate 16.
- the quantity of secondary electrons is less at the level of the grid 8.
- the unit 80 is also connected to each of the sensors 92 to determine an instant t a of arrival of the elementary particle from the measurements of the sensors 92.
- FIG. 8 represents the plate 16 in vertical section along a horizontal direction V.
- the substrate 61 is here formed of a stack, immediately one on top of the other, of horizontal layers. These stacked horizontal layers are as follows, going from bottom to top in the Z direction:
- dielectric layer denotes a horizontal layer of which more than 90% of the volume is made of dielectric material.
- the metallization layers are made of copper.
- the metallization layer 114 is structured to form horizontal tiles 120 horizontally separated mechanically from each other by interstices 124.
- the reference 120 is used as a generic reference to denote all the tiles made in the layer 114.
- Each tile 120 is completely surrounded by a gap 124.
- the gaps 124 are filled with a dielectric material, for example, identical to that of the dielectric layer 112
- the 120 tiles are all identical to each other.
- each tile 120 is deduced from another tile 120 only by a horizontal translation possibly combined with a rotation around a vertical axis.
- Each tile has the shape of a polygon with all sides of the same length.
- the largest dimension of a tile 120 is chosen so that each avalanche of secondary electrons which touches the plate 16, strikes at least two, and in this embodiment, at least three tiles 120 belonging to conductive strips 62 different.
- the largest dimension of a tile 120 is preferably less than or equal to 5 * Dm40 or 3 * Dm40 and, advantageously, less than Dm40 or 0.5Dm40.
- Largest dimension of a tile is meant here the length of the longest side of the horizontal rectangle of smaller area which entirely contains the tile 120.
- smallest dimension of a tile we designate the length of the tile. small side of this rectangle.
- the smallest dimension of a tile 120 is typically greater than 0.01 * Dm40 or 0.1 * Dm40 or 0.3 * Dm40.
- each connection 128 which electrically connects a first and a second tile 120 along the line 126 comprises:
- a conductive track 130 made in one of the metallization layers 102, 106, or 110 and which extends horizontally between a first end located under the first tile 120 and a second end located under the second tile 120, and
- the track 130 is produced in the metallization layer 110.
- the vias 132, 134 therefore only pass through the dielectric layer 112.
- the metallization layers 102 and 106 are used to make the electrical tracks, corresponding to the track 130, for the conductive strips 62 which extend, respectively, parallel to other directions U and W.
- the direction V is parallel to the direction Y and the U and W directions are angularly offset by, respectively, 60 ° and 120 ° with respect to the V direction.
- each conductive strip comprises at least one additional via 136 which opens onto the underside of the layer 104 and which allows this strip to be connected to a respective sensor 70.
- the via 136 extends, for example, from one of the connections 128 to this lower face of the layer 104. Consequently, the sensor 70 which measures the quantity of electric charges present on this strip 62 can be placed n 'anywhere on this underside and not just on the periphery of the plate 16.
- FIG. 9 represents a first example of a possible arrangement, relative to each other, of the tiles 120 on the horizontal front face of the dielectric layer 112.
- each tile 120 has the shape of a rhombus of which the two most pointed vertices 140, 142 are situated at each end of the large diagonal of this rhombus.
- the angle at the vertices 140 and 142 is equal to 60 °.
- the tiles 120 are arranged relative to each other so as to form a paving, also known by the English term of "tessallation", of the front face of the dielectric layer 112.
- the tiles 120 are distributed over the front face of the dielectric layer 112 so as to form a periodic tiling, i.e. a tiling which can be entirely constructed by periodically repeating a same pattern in at least two different horizontal directions.
- the repeated pattern is a hexagon formed by three adjacent tiles 120 which bear, respectively, the reference numerals 120a, 120b and 120c in Figure 9.
- the large diagonals of these tiles 120a, 120b and 120c are, respectively, parallel to directions Da, Db and De.
- the direction Da is parallel to the direction X and the directions Db and De are angularly offset, respectively, by + 60 ° and + 120 ° with respect to the direction Da.
- these three tiles 120a, 120b and 120c have a common vertex.
- the pattern is repeated periodically in the directions Da, Db and De.
- each tile 120a, 120b and 120c is filled with a respective texture.
- All the tiles 120b whose large diagonals are aligned with the line 126 are electrically connected in series to each other from one edge of the paving to the opposite edge to form a conductive strip 62 which extends parallel to the direction V.
- each tile 120b is separated from the immediately consecutive tile 120b along line 126 by tiles 120a and 120c. Thanks to this, the precision on the measurement of the position of the elementary particle is increased.
- the other tiles 120b are electrically connected to each other in a similar fashion to form a plurality of conductive strips 62 which extend parallel to the Y direction.
- the various conductive strips 62 parallel to the Y direction thus formed are electrically insulated from each other. other.
- the tiles 120a whose large diagonals are aligned one after the other along a line 144 parallel to the direction W are all electrically connected in series to each other by connections 128.
- a plurality of conductive strips 62 are formed which are electrically insulated from one another and all parallel to the direction U.
- the tiles 120c aligned one behind the other along a same line 146 parallel to the direction U are electrically connected in series. to each other by connections 128.
- a plurality of conductive strips 62 are formed which are electrically isolated from each other and all parallel to the U direction.
- the tiles 120 When the dimensions of the tiles 120 are large enough, they can be etched in the metallization layer 114 using simple etching processes such as photolithography. When the dimensions of the tiles 120 are very small, it is possible to produce them using the same manufacturing processes as those used to connect electronic components made on a silicon substrate to one another. Typically, these are the processes implemented during the manufacturing phase designated by the acronym BEOL (“Back End Of Line”).
- BEOL Back End Of Line
- the metallization layers used to make the tiles 120 and their connections 128 are then, for example, chosen from the metallization levels known by the acronyms M1 to M8.
- the processing unit 80 is able to unambiguously determine the positions of the two simultaneous impact points if they are separated from each other by a distance greater than the largest dimension of a tile.
- each conductive strip 62 is identical to that of the other conductive strips 62. Thus, it is not necessary to provide in the plate 16 means for compensating the difference in sensitivity between the different conductive strips. 62.
- the number of sensors 70 necessary to measure the position of the point of impact of an elementary particle is much smaller than in the case where each tile 120 is electrically isolated from all the other tiles 120 and directly connected to an input from a respective sensor 70.
- the assembly 72 must include as many sensors 70 as there are tiles 120, whereas in the embodiment described here, it only comprises one sensor 70 per conductive strip 62.
- step 150 a photon strikes cathode 4 and cathode 4 in response generates at least one electron which penetrates inside channel 24 closest to the point of impact. This electron is then accelerated and strikes coating 32, causing the generation of a first avalanche of secondary electrons.
- the first avalanche of secondary electrons passes through the gate 8, thus generating a peak of charges, such as the peak 94.
- the electrons of this first avalanche penetrate inside several of the channels 40. These electrons are then a again amplified inside the channels 40.
- a second avalanche of secondary electrons containing many more electrons than the first avalanche of secondary electrons is thus produced at the output of dynode 10.
- the second avalanche passes through the gate 12 and the empty space 56 and the secondary electrons of this second avalanche strike several of the tiles 120 of the plate 16. This then generates a peak of charges such as the peak 64, over several conductive strips 62.
- the sensors 70 continuously measure the amount of electric charge present on each of the bands 62 and transmit these measurements to the unit 80.
- the sensors 92 measure in permanently the quantity of electric charges present on the grid 8 and transmit these measurements to the unit 80.
- the unit 80 processes the measurements of the sensors 70 and 92 to establish, during an operation 156, the position Pf of the point d 'impact of the photon on the cathode 4 and, during an operation 158, the instant t a of arrival of this photon.
- a location P701 is first determined from the points of intersection between the conductive strips 62 on which a peak of charges has been detected.
- the secondary electron charge distribution area of the second avalanche on the outer face 60 is at the intersection of several bands 62 on which a charge peak is detected. Since the location of the bands 62 is known in an X, Y plane, the location of this distribution area in the X, Y plane can be determined.
- the memory 82 comprises a map of the bands 62 encoding for each of these bands the equation of the horizontal axis along which it extends. The coordinates in the X, Y plane of the point of intersection between two bands 62 can then easily be found, since the equation of the axes of these bands is known.
- the measurements of the sensors 92 are also used to validate or invalidate the location P701 determined from the measurements of the sensors 70.
- the unit 80 calculates the difference Ee ab
- the difference Ee ab is equal to the estimate of the difference between the instants tm 92a and tm 92b where the peak of loads is detected by the sensors, respectively, 92a and 92b.
- - d 92a and d 92b are the distances which separate the determined location P701 from the locations, respectively, of the sensors 92a and 92b, and
- the locations of the sensors 92a and 92b in the X, Y plane are known and, for example, stored in the memory 82.
- the deviation Ee ab is then compared with the measured deviation Em ab .
- the difference Em ab is equal to the difference tm 92a -tm 92b , where the instants tm 92a and tm 92b are the measured instants where, respectively, the sensors 92a and 92b detect the peak of charges.
- the verification of the validity of the location P701 is tested, as described above, in the particular case of the sensors 92a and 92b, by successively using the other possible pairs of sensors 92. If the determined location P701 is validated with the measurements of each of the sensors 92, then the location P701 is considered valid. For example, in this case, the position Pf of the point of impact is taken equal to this location P701. Otherwise, location P701 is considered invalid. In the latter case, the method stops and returns to an initial state to determine the position of the point of impact of the next elementary particle received. Then, during operation 158, the unit 80 establishes the instant t a of arrival of the elementary particle.
- an instant t a 92 of arrival of the elementary particle is determined from the measurements of the sensors 92.
- the unit 80 detects the instants tm 92a , tm 92b , tm 92c and tm 92d where the sensors, respectively, 92a, 92b, 92c and 92d have detected a peak of charges such as peak 94.
- each of these instants tm 92 is established from the instants corresponding to the instants t 3 and t 4 of peak 94.
- each of these times tm 92a to tm 92d is corrected by subtracting therefrom the propagation time of the electrical signal between the location where the first avalanche crosses the gate 8 and the location of the sensor 92. Subsequently, the corrected times tm 92a to tm 92d are denoted, respectively, tc 92a to tc 92d .
- the instant tc 92a is calculated using the following relationship:
- tc 92a tm 92a -d 92a / c 8 , where:
- - d 92a is the distance between the location where the first avalanche crosses the grid 8 and the location of the sensor 92a.
- the location where the first avalanche crosses the grid 8 is established from the position Pf determined during operation 156.
- the coordinates of this location are taken equal to the x, y coordinates of the position Pf
- the coordinates of the sensor 92a in the X, Y plane are known and, for example, pre-recorded in the memory 82.
- the instant of arrival t a92 of the elementary particle is then determined from the corrected instants tc 92a to tc 92d .
- the instant t a92 is equal to the arithmetic mean of the instants tc 92a to tc 92d .
- the instant t a of arrival of the elementary particle is for example taken equal to the instant t a92 thus determined.
- FIG. 11 represents a reading plate 200 capable of being used in place of the plate 16.
- This plate 200 is identical to the plate 16, except that two sensors 70i and 70 2 are connected to each end of each conductive strip 62. To simplify Figure 11, only one strip 62 is shown. The wavy and vertical lines indicate that a central part of the plate 200 has not been shown in FIG. 11.
- the via 136 is replaced by two vias 202 and 204 each located at a respective end of the strip 62.
- the sensors 70i and 70 2 are connected, respectively, to vias 202 and 204. Each of the sensors 70i and 70 2 is identical to the sensor 70.
- Step 208 comprises successively:
- the operation 212 is identical to the operation 156, except that it comprises, in addition or instead, the determination of a location P702 of the second avalanche of secondary electrons from the instants tm 70i and tm 70 2 where the sensors 70i and 70 2 detect the presence of a peak of loads, such as the peak 64.
- a peak of loads such as the peak 64.
- each instant tm 70i and tm 702 is determined from the instants corresponding to the instants ti and t 2 of the peak 64.
- the location P702 along this band 62 is determined from the coordinates xc 62 , yc 62 of the midpoint located halfway between the sensors 70i and 70 2 and times tm 70i and tm 702 .
- the coordinates x 2i , y 2i of the location P702 are taken equal to the coordinates xc 62 , yc 62 to which is added the distance (tm 7 oi-tm 702 ) * Ci 6 , where Ci 6 is the speed of propagation of the electrical signal in the band 62.
- the instants tm 70i and tm 702 are equal, only if the second avalanche is located on the midpoint. In all the other cases, that is to say as soon as the second avalanche is eccentric with respect to the midpoint, the instants tm 70i and tm 702 are different. The difference between the instants tm 70i and tm 702 is proportional to the offset of the second avalanche with respect to the midpoint.
- the above calculation is preferably carried out for several of the bands 62 on which a peak of loads is detected. For each of these bands 62, a location P702 is obtained. These different locations P702 are then combined to obtain more precise coordinates x 2i , y 2i .
- coordinates X Ü , yi, of the location P701 have been determined from the crossing points of the conductive strips 62 on which a peak of charges has been detected, advantageously, these are combined with the coordinates x 2j , y 2i to obtain more precise coordinates of the second avalanche.
- the coordinates of the second avalanche are obtained by taking an arithmetic or weighted average of the coordinates X Ü , yi, and x 2i , y 2i .
- the weight given to coordinates x 2i , y 2i is less than that given to coordinates X Ü , yii.
- the x, y coordinates of the position Pf of the point of impact are taken equal to the more precise coordinates thus determined.
- the operation 212 is identical to the operation 158, except that it comprises, in addition or instead, the determination of an instant t a7 o of arrival from the measurements of the sensors 70i and 70 2 connected to a band 62 affected by the second avalanche of secondary electrons.
- each instant tm 70i and tm 702 is first corrected to subtract the propagation time of the electrical signal between the location of the second avalanche and the location of each of the sensors.
- the coordinates of the location where the second avalanche touches the plate 16 are established from the coordinates of the position Pf determined during operation 210.
- the corrected time tc 702 is calculated in a similar manner by replacing the coordinates of the sensor 70i by the coordinates of the sensor 70 2 .
- the instant t a 0 is then obtained by combining the instants tc 70i and tc 702 calculated for the different bands 62 on which a peak of loads has been detected.
- the instant t a70 is the arithmetic mean of all the calculated instants tc 70i and tc 702 .
- the arrival time t a is obtained by combining these two times t a70 and t a92 .
- the instant t a is equal to the arithmetic mean of the instants t a70 and t a92 .
- FIG. 13 shows four conductive grids 220 to 223, capable of being used in place of the grid 8.
- the grids 220 to 223 each extend here in the same horizontal plane as the horizontal plane in which s' extends the grid 8. These grids 220 to 223 are arranged and disposed one beside the other, so as to occupy the same area as the grid 8.
- the grids 220 to 223 are electrically isolated from each other. To this end, they are here electrically isolated from each other by two horizontal separations 226 and 228 parallel, respectively, to the X and Y directions.
- each gate 220 to 223 corresponds to a quarter of a disk.
- Each grid 220 to 223 is connected to a respective sensor 92.
- the gates 220 to 223 are connected, respectively, to the sensors 92a to 92d.
- grids 220 to 223 are identical to grid 8, except that each of them occupies a respective part of the surface likely to be crossed by the first avalanche of secondary electrons.
- each of the grids 220 to 223 is connected to terminal 36.
- FIG. 14 represents a reading plate 250 identical to the plate 16 except that the tiles 120 are replaced by tiles 252.
- the tiles 252 are identical to the tiles 120 except that they each have a triangular shape. More precisely, each tile 252 is an equilateral or isosceles triangle.
- the tiles 252 are electrically connected to each other so as to form conductive strips 254 which run parallel to six directions A, B, C, D, E and F.
- the directions A and D are parallel to the Y direction.
- the B and E directions are angularly offset by -60 ° with respect, respectively, to directions A and D.
- Directions C and E are angularly offset by + 60 ° with respect, respectively, to directions A and D.
- the reference numerals 252a, 252b, 252c, 252d, 252e and 252f are used to denote the tiles 252 which belong to parallel conductive strips, respectively, to the directions A, B, C, D, E and F.
- each tile which belongs to the conductive strips which run parallel to a predetermined direction is filled with a respective texture, which makes it possible to identify this tile in the plate 250, even without a numerical reference.
- the periodically repeated pattern is a hexagon having one copy of each of tiles 252a, 252b, 252c, 252d, 252e and 252f. In this pattern, these tiles 252a, 252b, 252c, 252d, 252e and 252f share a common vertex located on the geometric center of the hexagon. This hexagon is repeated periodically in directions A, B and C.
- the tiles 252a and 252d are aligned along lines parallel to the directions A and D such as line 256. Along line 256, a tile 252d is interposed between each pair of successive tiles 252a.
- Tiles 252b and 252f are aligned along lines parallel to directions B and F such as line 258. Along line 258, a tile 252b is interposed between each pair of successive tiles 252f.
- the 252c and 252e tiles are aligned along lines parallel to the C and E directions such as line 260.
- line 260 a 252c tile is interposed between each pair of successive 252e tiles.
- each tile 252 which is not located on an edge of the paving, is immediately surrounded by tiles 252 belonging to five different conductive strips. Therefore, each point of impact results in a variation in the electrical charge of at least six different conductive strips. With the plate 250, it is therefore possible to determine, without ambiguity, the position of at least five simultaneous points of impact if the distance separating these points of impact two by two is greater than the largest dimension of the tile.
- the matrix 34 is made from the same material as the coating 32.
- the coating 32 is obtained by a chemical reaction between the material which makes up the matrix 34 and a chemical reagent.
- this chemical reagent is a liquid or gaseous reagent introduced inside each of the channels.
- coating 32 is the result of oxidation or nitridation of matrix 34.
- emissive materials can be used to produce the coating 32.
- the coating 32 can also be produced in one or more of the materials selected from the group consisting of the materials listed between lines 41 and 44 of column 10 of US6384519B1.
- the coating 32 does not cover all of the walls of the channels.
- the coating 32 is only located on the upper part of the channels, while the lower part of these channels is devoid of an emissive coating.
- the emissive material is a gas and the channels are filled with this gas.
- gas is a mixture of 90%, by mass, argon and 10%, by mass, carbon dioxide.
- the coating 32 can be omitted.
- the cross section of the channels can have any shape.
- the cross section of the channels can be a polygon, such as a square, or an oval.
- the cross section of the channels is not necessarily constant over the entire length of the channel.
- the cross section of the channel may decrease as one moves towards its exit.
- the channels can be produced by anisotropic plasma etching (“anisotropic plasma etching”), by photolithography or the like.
- the axis of the channels can be inclined relative to the horizontal plane. If the detector has several dynodes stacked on top of each other, the axes of the channels of the upper dynode are preferably inclined along a first direction which intersects a second direction. The axes of the channels of the lower dynode are then parallel to this second direction.
- the channels do not extend along a rectilinear axis, but along a curved or sinuous path.
- the dynode can be made from other material.
- the dynode is made of a resistive or dielectric or conductive material.
- the material used to make the dynode can be chosen from the group consisting of the materials listed between rows 6 and 17 of column 10 of US6384519B1.
- the conductivity of the walls of the channels can be increased by depositing on these walls a sub-layer of a resistive material such as, for example, a resistive polymer sub-layer. This sublayer then forms the wall of the channel on which the emissive coating is produced.
- a resistive material such as, for example, a resistive polymer sub-layer.
- the conductive strips can be replaced by conductive electrodes which are electrically insulated from each other and each individually connected to its own sensor 70 as described in US6384519B1.
- the conductive bands are rectilinear bands which extend in a single plane. They are therefore devoid of tiles located in a first horizontal plane and of electrical connections located under this first horizontal plane. In this case, so that the conductive strips that extend in secant directions can cross each other, they are made in horizontal planes located at different heights.
- a solid and uniform resistive layer is deposited on the outer face 60 of the plate 16.
- this resistive layer is separated from the conductive strips 62 by a layer of dielectric material.
- the surface resistivity of this resistive layer known by the English term of “sheet resistivity” or “surface resistivity” at 20 ° Celsius is between 10 k ⁇ / square and 100 MW / square.
- the surface resistivity is greater than 100 kQ / square or 1 MW / square and, advantageously, less than 10 MW / square.
- the substrate 61 further comprises ground planes extending horizontally between the metallization layers to reduce crosstalk between the conductive strips.
- the elementary particle to be detected can be a charged particle, such as an ion or a muon, or a neutral particle such as a neutron.
- the cathode is then made of an emissive material which releases at least one electron when it is struck by the elementary particle to be detected.
- the emissive material therefore depends on the elementary particle to be detected.
- the emissive material used can be boron or palladium. It is also possible to detect protons by choosing the appropriate emissive material.
- the detector comprises a single dynode and a single conductive grid.
- a spacer can also be placed between the dynodes 6 and 10. This makes it possible in particular to improve the spatial dispersion of the secondary electrons in different channels. For example, it is then possible to distribute the electrons which leave the output 30 of a single channel 24 in several channels 40 even if the diameter Dm40 of the channels 40 is greater than the diameter Dm24.
- the spacer 14 can be omitted in certain embodiments such as the embodiments where the diameter Dm24 is greater than the diameter Dm40.
- the detector comprises a single sensor 92. In this case, the combination of times tc 92a to tc 92d is omitted.
- the sensors 70 and 92 are not necessarily electrically connected directly to, respectively, a strip 62 and the grid 8.
- the detector comprises several dynodes and several conductive grids located between these dynodes, only one or more of these conductive grids are connected to sensors 92.
- the sensors 92 are connected to the grid 12 instead of being connected to grid 8. In this case, the quantity of electric charge which passes through grid 12 is greater but the spatial distribution of electrons is then more spread out.
- grids 220 to 223 are possible. For example, more than four grids can be used or, conversely, less than four grids.
- the shapes of the grids 220 to 223 can also be different.
- the sensors 70 are connected to the distal or proximal end of the conductive strips 62.
- the connections to the strips 62 are distributed over the periphery of the reading plate. It is then not necessary to provide a vertical via to connect the sensors 70 to a central point of these bands 62.
- the location P702 is not determined.
- the position Pf of the point of impact is only established from location P701.
- the location P701 is not determined.
- the Pf position is established using only the location P702 and without using the points of intersection between the conductive strips 62.
- the conductive strips do not need to cross. For example, they can all be parallel to each other.
- the validation and, alternately, the invalidation of the location P701 can be applied to the location P702.
- the validation and, alternately, the invalidation of the location determined from the measurements of the sensors 92 may be omitted.
- the position Pf of the point of impact is established by combining the locations P701 and P92 or P702 and P92. For example, the position Pf is equal to the arithmetic mean of the locations P701 and P92.
- locations P701, P702 and P92 can be combined to determine the Pf position of the point of impact.
- a weighted average of locations P701 and P92 can be used, preferably giving more weight to location P701.
- the determination of the instant t a92 from the various corrected instants tc 92a to tc 92d can be carried out other than by a simple arithmetic mean.
- the arithmetic mean is replaced by a weighted mean in which a greater weight is assigned to the sensors 92 which are closest to the point of impact.
- only the measurement (s) of the sensors 92 which are located at a distance less than a predetermined threshold from the point of impact are taken into account.
- the instant t a70 can be calculated by implementing other means than a simple arithmetic mean.
- the different variants described in the particular case of the determination of the instant t a92 also apply to the determination of the instant t a70 .
- time t a is a weighted average of times t a70 and t a92 giving more weight to time t a92 than to time ta70-
- the correction of the instants tm 92 or tm 70 is omitted.
- the instant t a92 or t a70 is calculated directly from the measurements of the sensors 92 or 70 but without using the position Pf of the point of impact. This embodiment is practical if the propagation times are negligible.
- the instant t a70 is not determined and the measurements of the sensors 70 are not used to determine the instant t a .
- the instant t a92 is not determined.
- the instant t a is determined solely from the measurements of the sensors 70.
- the instant t a is then taken equal to the instant t a70 .
- the sensors 92 can be omitted.
- the avalanche of secondary electrons After passing through the conductive grid, the avalanche of secondary electrons widens. The area of impact of the secondary electrons on the reading plate is therefore larger than the area of the conductive grid crossed by these same secondary electrons. In other words, the spatial dispersion of these secondary electrons is lower at the level of the conductive grid than at the level of the reading plate. Since the spatial dispersion of these secondary electrons at the conductive grid is lower, it generates a narrower peak of charges. In addition, the impedance of the conductive grid is much more uniform than the impedance of the conductive strips 62. In fact, the impedance of the tiles 120 is different from the impedance of the connections 128 which creates numerous impedance breaks. along each band 62. Because of these two characteristics, the uncertainty on the instant t a at which the elementary particle arrives is lower if this instant is established from the measurements of the sensors 92 than only from the measurements of the elements. sensors 70.
- Using conductive strips instead of individual electrodes greatly reduces the number of sensors 70 needed to determine the Pf position of the point of impact.
- the tiles of each conductive strip are located in the same plane, so that they have the same sensitivity. It is therefore not necessary to implement means to correct differences in sensitivity between the conductive strips, as is the case when these conductive strips are located in different horizontal planes.
- the largest dimension of the tiles is less than or equal to the largest dimension of the outlet of the channels simply makes it possible to distribute the avalanche of secondary electrons over several tiles, even in the case where the detector comprises a single dynode.
- the invention naturally applies to the study of particle physics.
- the invention also applies to the field of imaging, in particular in the space, medical or environmental field and also in the field of transport.
- the invention can be used in the context of treatment by hadrontherapy or proton therapy or also in the context of positron emission therapy (PET).
- PET positron emission therapy
Landscapes
- Measurement Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1900458A FR3091953B1 (fr) | 2019-01-18 | 2019-01-18 | Detecteur de particules elementaires |
PCT/FR2020/050058 WO2020148508A1 (fr) | 2019-01-18 | 2020-01-16 | Detecteur de particules elementaires |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3912183A1 true EP3912183A1 (fr) | 2021-11-24 |
EP3912183B1 EP3912183B1 (fr) | 2023-03-01 |
Family
ID=67956843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20707305.7A Active EP3912183B1 (fr) | 2019-01-18 | 2020-01-16 | Detecteur de particules elementaires |
Country Status (5)
Country | Link |
---|---|
US (1) | US11823881B2 (fr) |
EP (1) | EP3912183B1 (fr) |
JP (1) | JP7350863B2 (fr) |
FR (1) | FR3091953B1 (fr) |
WO (1) | WO2020148508A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3140205A1 (fr) | 2022-09-23 | 2024-03-29 | Universite Claude Bernard Lyon 1 | Détecteur de particules élémentaires et procédé de détection associé |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05118914A (ja) * | 1991-10-29 | 1993-05-14 | Shimadzu Corp | アレー状電磁波センサ |
AU5098798A (en) | 1996-10-30 | 1998-05-22 | Nanosystems, Inc. | Microdynode integrated electron multiplier |
US6747271B2 (en) * | 2001-12-19 | 2004-06-08 | Ionwerks | Multi-anode detector with increased dynamic range for time-of-flight mass spectrometers with counting data acquisition |
JP4259276B2 (ja) * | 2003-10-24 | 2009-04-30 | パナソニック電工株式会社 | マイクロ波無電極放電灯装置 |
JP5118914B2 (ja) | 2007-07-31 | 2013-01-16 | 東海ゴム工業株式会社 | 防振ゴム組成物およびその製法 |
JP5159393B2 (ja) * | 2008-03-31 | 2013-03-06 | サイエナジー株式会社 | 電子増幅器及びこれを使用した放射線検出器 |
GB2486484B (en) * | 2010-12-17 | 2013-02-20 | Thermo Fisher Scient Bremen | Ion detection system and method |
FR3062926B1 (fr) * | 2017-02-15 | 2019-04-12 | Universite Claude Bernard Lyon 1 | Detecteur gazeux de particules elementaires |
JP6395906B1 (ja) * | 2017-06-30 | 2018-09-26 | 浜松ホトニクス株式会社 | 電子増倍体 |
-
2019
- 2019-01-18 FR FR1900458A patent/FR3091953B1/fr active Active
-
2020
- 2020-01-16 EP EP20707305.7A patent/EP3912183B1/fr active Active
- 2020-01-16 US US17/423,723 patent/US11823881B2/en active Active
- 2020-01-16 JP JP2021541566A patent/JP7350863B2/ja active Active
- 2020-01-16 WO PCT/FR2020/050058 patent/WO2020148508A1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
EP3912183B1 (fr) | 2023-03-01 |
WO2020148508A1 (fr) | 2020-07-23 |
US20220082709A1 (en) | 2022-03-17 |
JP7350863B2 (ja) | 2023-09-26 |
US11823881B2 (en) | 2023-11-21 |
JP2022517431A (ja) | 2022-03-08 |
FR3091953A1 (fr) | 2020-07-24 |
FR3091953B1 (fr) | 2021-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2798339B1 (fr) | Procédé d'analyse d'un échantillon de matériau par diffractométrie et diffractomètre associé | |
EP2541280B1 (fr) | Dispositif de détection de rayonnement ionisant à détecteur semi-conducteur à réponse spectrométrique améliorée | |
WO1996017373A1 (fr) | Detecteur de rayonnements ionisants a microcompteurs proportionnels | |
EP2904425B1 (fr) | Procédé et dispositif de détection d'un rayonnement ionisant par un photodétecteur pixellisé | |
EP0810631A1 (fr) | Dispositif d'imagerie radiographique à haute résolution | |
EP3912183B1 (fr) | Detecteur de particules elementaires | |
EP3583446B1 (fr) | Détecteur gazeux de particules élémentaires | |
WO1998029764A1 (fr) | Tete de detection et collimateur pour gamma-camera | |
WO2014044982A2 (fr) | Procede d'analyse par diffractometrie et diffractometre associe, particulierement adaptes a des echantillons comportant plusieurs couches de materiaux | |
EP0165119B1 (fr) | Dispositif multiplicateur d'électrons, à localisation par le champ électrique | |
EP1573821A1 (fr) | Matrice de detecteurs multispectraux | |
EP1343194A1 (fr) | Détecteurs de radiations et dispositifs d'imagerie autoradiographique comprenant de tels détecteurs | |
EP2483909B1 (fr) | Détecteurs de radiations et dispositifs d'imagerie autoradiographique comprenant de tels détecteurs | |
FR3140205A1 (fr) | Détecteur de particules élémentaires et procédé de détection associé | |
EP2749903B1 (fr) | Circuit de connexion multiplexé et dispositif de détection d'au moins une particule utilisant le circuit de connexion | |
EP2997399B1 (fr) | Detecteur de rayons x | |
WO1997004335A1 (fr) | Detecteur de particules sensible a la position et transparent | |
FR2856481A1 (fr) | Dispositif et procede a centroide pour une definition d'image de rayons x inferieure au pixel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20210806 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20220907 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP Ref country code: AT Ref legal event code: REF Ref document number: 1551581 Country of ref document: AT Kind code of ref document: T Effective date: 20230315 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602020008496 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: FRENCH |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG9D |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20230301 |
|
P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230601 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230601 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1551581 Country of ref document: AT Kind code of ref document: T Effective date: 20230301 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230602 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230703 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230701 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602020008496 Country of ref document: DE |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 |
|
26N | No opposition filed |
Effective date: 20231204 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20240119 Year of fee payment: 5 Ref country code: GB Payment date: 20240123 Year of fee payment: 5 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20230301 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20240122 Year of fee payment: 5 |