EP3887378A1 - Dispositif électronique - Google Patents
Dispositif électroniqueInfo
- Publication number
- EP3887378A1 EP3887378A1 EP19794556.1A EP19794556A EP3887378A1 EP 3887378 A1 EP3887378 A1 EP 3887378A1 EP 19794556 A EP19794556 A EP 19794556A EP 3887378 A1 EP3887378 A1 EP 3887378A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- atoms
- aromatic ring
- groups
- ring systems
- radicals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 125000003118 aryl group Chemical group 0.000 claims description 216
- 150000003254 radicals Chemical group 0.000 claims description 135
- 125000003545 alkoxy group Chemical group 0.000 claims description 109
- 125000000217 alkyl group Chemical group 0.000 claims description 107
- 125000004432 carbon atom Chemical group C* 0.000 claims description 105
- 150000001875 compounds Chemical class 0.000 claims description 102
- -1 quaterphenyl Chemical group 0.000 claims description 73
- 125000003342 alkenyl group Chemical group 0.000 claims description 57
- 125000000304 alkynyl group Chemical group 0.000 claims description 57
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 33
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims description 30
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 29
- 125000001072 heteroaryl group Chemical group 0.000 claims description 28
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 24
- 125000004122 cyclic group Chemical group 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 18
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 18
- 125000006413 ring segment Chemical group 0.000 claims description 17
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 14
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 claims description 14
- 235000010290 biphenyl Nutrition 0.000 claims description 13
- 239000004305 biphenyl Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 claims description 10
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 9
- 230000005525 hole transport Effects 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- ICPSWZFVWAPUKF-UHFFFAOYSA-N 1,1'-spirobi[fluorene] Chemical compound C1=CC=C2C=C3C4(C=5C(C6=CC=CC=C6C=5)=CC=C4)C=CC=C3C2=C1 ICPSWZFVWAPUKF-UHFFFAOYSA-N 0.000 claims description 7
- 125000005509 dibenzothiophenyl group Chemical group 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 6
- WUNJCKOTXFSWBK-UHFFFAOYSA-N indeno[2,1-a]carbazole Chemical compound C1=CC=C2C=C3C4=NC5=CC=CC=C5C4=CC=C3C2=C1 WUNJCKOTXFSWBK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- PJULCNAVAGQLAT-UHFFFAOYSA-N indeno[2,1-a]fluorene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C4=CC=C3C2=C1 PJULCNAVAGQLAT-UHFFFAOYSA-N 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims description 3
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 claims description 2
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 claims description 2
- 239000002537 cosmetic Substances 0.000 claims description 2
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 31
- 125000005842 heteroatom Chemical group 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 229910052751 metal Chemical group 0.000 description 11
- 239000002184 metal Chemical group 0.000 description 11
- 150000001412 amines Chemical class 0.000 description 9
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 6
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 6
- 125000005259 triarylamine group Chemical group 0.000 description 6
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 5
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 5
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 5
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 4
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 3
- SLGBZMMZGDRARJ-UHFFFAOYSA-N Triphenylene Natural products C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- RFRXIWQYSOIBDI-UHFFFAOYSA-N benzarone Chemical compound CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC=C(O)C=C1 RFRXIWQYSOIBDI-UHFFFAOYSA-N 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 3
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 150000003462 sulfoxides Chemical class 0.000 description 3
- 150000003918 triazines Chemical class 0.000 description 3
- UUSUFQUCLACDTA-UHFFFAOYSA-N 1,2-dihydropyrene Chemical compound C1=CC=C2C=CC3=CCCC4=CC=C1C2=C43 UUSUFQUCLACDTA-UHFFFAOYSA-N 0.000 description 2
- LPHIYKWSEYTCLW-UHFFFAOYSA-N 1h-azaborole Chemical class N1B=CC=C1 LPHIYKWSEYTCLW-UHFFFAOYSA-N 0.000 description 2
- DMEVMYSQZPJFOK-UHFFFAOYSA-N 3,4,5,6,9,10-hexazatetracyclo[12.4.0.02,7.08,13]octadeca-1(18),2(7),3,5,8(13),9,11,14,16-nonaene Chemical class N1=NN=C2C3=CC=CC=C3C3=CC=NN=C3C2=N1 DMEVMYSQZPJFOK-UHFFFAOYSA-N 0.000 description 2
- PMVRHMKYOMJWSD-UHFFFAOYSA-N 4-(4-aminophenyl)-2,3-diphenylaniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 PMVRHMKYOMJWSD-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- ZHQNDEHZACHHTA-UHFFFAOYSA-N 9,9-dimethylfluorene Chemical compound C1=CC=C2C(C)(C)C3=CC=CC=C3C2=C1 ZHQNDEHZACHHTA-UHFFFAOYSA-N 0.000 description 2
- HKMTVMBEALTRRR-UHFFFAOYSA-N Benzo[a]fluorene Chemical compound C1=CC=CC2=C3CC4=CC=CC=C4C3=CC=C21 HKMTVMBEALTRRR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- 150000008365 aromatic ketones Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 150000001555 benzenes Chemical class 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 150000001716 carbazoles Chemical class 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 150000007858 diazaphosphole derivatives Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000006574 non-aromatic ring group Chemical group 0.000 description 2
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical compound C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 150000003248 quinolines Chemical class 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 150000003252 quinoxalines Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- HQDYNFWTFJFEPR-UHFFFAOYSA-N 1,2,3,3a-tetrahydropyrene Chemical compound C1=C2CCCC(C=C3)C2=C2C3=CC=CC2=C1 HQDYNFWTFJFEPR-UHFFFAOYSA-N 0.000 description 1
- ZFXBERJDEUDDMX-UHFFFAOYSA-N 1,2,3,5-tetrazine Chemical compound C1=NC=NN=N1 ZFXBERJDEUDDMX-UHFFFAOYSA-N 0.000 description 1
- FNQJDLTXOVEEFB-UHFFFAOYSA-N 1,2,3-benzothiadiazole Chemical compound C1=CC=C2SN=NC2=C1 FNQJDLTXOVEEFB-UHFFFAOYSA-N 0.000 description 1
- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical compound C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 description 1
- HTJMXYRLEDBSLT-UHFFFAOYSA-N 1,2,4,5-tetrazine Chemical compound C1=NN=CN=N1 HTJMXYRLEDBSLT-UHFFFAOYSA-N 0.000 description 1
- BBVIDBNAYOIXOE-UHFFFAOYSA-N 1,2,4-oxadiazole Chemical compound C=1N=CON=1 BBVIDBNAYOIXOE-UHFFFAOYSA-N 0.000 description 1
- YGTAZGSLCXNBQL-UHFFFAOYSA-N 1,2,4-thiadiazole Chemical compound C=1N=CSN=1 YGTAZGSLCXNBQL-UHFFFAOYSA-N 0.000 description 1
- FYADHXFMURLYQI-UHFFFAOYSA-N 1,2,4-triazine Chemical compound C1=CN=NC=N1 FYADHXFMURLYQI-UHFFFAOYSA-N 0.000 description 1
- UDGKZGLPXCRRAM-UHFFFAOYSA-N 1,2,5-thiadiazole Chemical compound C=1C=NSN=1 UDGKZGLPXCRRAM-UHFFFAOYSA-N 0.000 description 1
- UXJHQQLYKUVLIE-UHFFFAOYSA-N 1,2-dihydroacridine Chemical class C1=CC=C2N=C(C=CCC3)C3=CC2=C1 UXJHQQLYKUVLIE-UHFFFAOYSA-N 0.000 description 1
- FKASFBLJDCHBNZ-UHFFFAOYSA-N 1,3,4-oxadiazole Chemical compound C1=NN=CO1 FKASFBLJDCHBNZ-UHFFFAOYSA-N 0.000 description 1
- MBIZXFATKUQOOA-UHFFFAOYSA-N 1,3,4-thiadiazole Chemical compound C1=NN=CS1 MBIZXFATKUQOOA-UHFFFAOYSA-N 0.000 description 1
- JIHQDMXYYFUGFV-UHFFFAOYSA-N 1,3,5-triazine Chemical compound C1=NC=NC=N1 JIHQDMXYYFUGFV-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- YZVWKHVRBDQPMQ-UHFFFAOYSA-N 1-aminopyrene Chemical class C1=C2C(N)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 YZVWKHVRBDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- TZMSYXZUNZXBOL-UHFFFAOYSA-N 10H-phenoxazine Chemical compound C1=CC=C2NC3=CC=CC=C3OC2=C1 TZMSYXZUNZXBOL-UHFFFAOYSA-N 0.000 description 1
- MYKQKWIPLZEVOW-UHFFFAOYSA-N 11h-benzo[a]carbazole Chemical compound C1=CC2=CC=CC=C2C2=C1C1=CC=CC=C1N2 MYKQKWIPLZEVOW-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- AGSGBXQHMGBCBO-UHFFFAOYSA-N 1H-diazasilole Chemical class N1C=C[SiH]=N1 AGSGBXQHMGBCBO-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- USYCQABRSUEURP-UHFFFAOYSA-N 1h-benzo[f]benzimidazole Chemical compound C1=CC=C2C=C(NC=N3)C3=CC2=C1 USYCQABRSUEURP-UHFFFAOYSA-N 0.000 description 1
- IGHOZKDBCCFNNC-UHFFFAOYSA-N 1h-imidazole;quinoxaline Chemical compound C1=CNC=N1.N1=CC=NC2=CC=CC=C21 IGHOZKDBCCFNNC-UHFFFAOYSA-N 0.000 description 1
- PLJDGKPRGUMSAA-UHFFFAOYSA-N 2,2',7,7'-tetraphenyl-1,1'-spirobi[fluorene] Chemical compound C12=CC=C(C=3C=CC=CC=3)C=C2C=C(C23C(=CC=C4C5=CC=C(C=C5C=C43)C=3C=CC=CC=3)C=3C=CC=CC=3)C1=CC=C2C1=CC=CC=C1 PLJDGKPRGUMSAA-UHFFFAOYSA-N 0.000 description 1
- 125000004206 2,2,2-trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- UXGVMFHEKMGWMA-UHFFFAOYSA-N 2-benzofuran Chemical compound C1=CC=CC2=COC=C21 UXGVMFHEKMGWMA-UHFFFAOYSA-N 0.000 description 1
- LYTMVABTDYMBQK-UHFFFAOYSA-N 2-benzothiophene Chemical compound C1=CC=CC2=CSC=C21 LYTMVABTDYMBQK-UHFFFAOYSA-N 0.000 description 1
- 125000004493 2-methylbut-1-yl group Chemical group CC(C*)CC 0.000 description 1
- VHMICKWLTGFITH-UHFFFAOYSA-N 2H-isoindole Chemical compound C1=CC=CC2=CNC=C21 VHMICKWLTGFITH-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 238000009834 vaporization Methods 0.000 description 1
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- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/624—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing six or more rings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
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- H—ELECTRICITY
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Definitions
- the present application relates to an electronic device which contains certain amine compounds in a hole-transporting layer and which contains emissive compounds of a certain structure type in an emitting layer.
- Organic electronic devices which are organic semiconductor materials
- OLEDs organic electroluminescent devices
- OLEDs organic electroluminescent devices
- the term OLEDs is understood to mean electronic devices which have one or more layers containing organic compounds and which emit light when electrical voltage is applied.
- the structure and the general principle of operation of OLEDs are known to the person skilled in the art.
- a variety of different materials are known as materials for hole-transporting layers in electronic devices, most of which belong to the class of triarylamines, such as
- N for example N, N '-di (1-naphthyl) - N, N
- NPD diphenyl- (1, 1'-biphenyl) -4,4'-diamine
- TCTA tris- (4-carbazolyl-9-ylphenyl) amine
- Fluorescent compounds for example pyrenamines, or phosphorescent compounds are essentially used for this use Connections that are usually chosen from
- Transition metal complexes with an organometallic bond in particular iridium complexes such as lr (PPy) 3 (tris [2-phenylpyridinato-C 2 , / ⁇ /] iridium (III)).
- iridium complexes such as lr (PPy) 3 (tris [2-phenylpyridinato-C 2 , / ⁇ /] iridium (III)
- Bridged triarylboron compounds with a certain structure were also used as fluorescent compounds. A high external quantum efficiency was found for these compounds in certain structures when used as emitters in OLEDs.
- the present invention thus relates to an electronic one
- Each occurrence of X is the same or different from O, S, NR E2 and C (R E2 ) 2, whereby at least one X must be present, which is selected from O, S and NR E2 ;
- C 1 , C 2 and C 3 are selected identically or differently from ring systems with 5 to 40 ring atoms which are substituted with radicals R E3 ;
- Alkoxy groups with 1 to 20 C atoms branched or cyclic alkyl or alkoxy groups with 3 to 20 C atoms, alkenyl or alkynyl groups with 2 to 20 C atoms, aromatic ring systems with 6 to 40
- emitting layer is arranged, and which contains a compound of a formula (L-1), (L-2) or (L-3)
- Z is C when a group - [Ar 1 ] n -N (Ar 2 ) 2 is attached to it, and Z is when no group - [Ar 1 ] n -N (Ar 2 ) 2 is attached to it, with each occurrence the same or different N or CR 1 ;
- Ar 1 is the same or different at each occurrence an aromatic ring system with 6 to 40 aromatic ring atoms which is substituted by R 3 radicals or a heteroaromatic ring system with 5 to 40 aromatic ring atoms which is substituted by R 3 radicals;
- Ar 2 is the same or different at each occurrence an aromatic ring system with 6 to 40 aromatic ring atoms which is substituted by R 3 radicals or a heteroaromatic ring system with 5 to 40 aromatic ring atoms which is substituted by R 3 radicals;
- R 5 is selected identically or differently from H, D, F, CI, Br, I, CN, alkyl or alkoxy groups with 1 to 20 C atoms, alkenyl or alkynyl groups with 2 to 20 C atoms, aromatic Ring systems with 6 to 40 aromatic ring atoms and heteroaromatic
- Ring systems with 5 to 40 aromatic ring atoms wherein two or more radicals R 5 can be linked to one another and form a ring; and wherein said alkyl, alkoxy, alkenyl and
- Alkynyl groups, aromatic ring systems and heteroaromatic ring systems can be substituted with one or more radicals selected from F and CN; n is the same or different at each occurrence 0, 1, 2, 3 or 4; k is 0 or 1; and
- a layer H2 which is arranged between the layer H1 and the emitting layer.
- index n is 0, this means that the group -N (Ar 2 ) 2 and the spirobifluorenyl or fluorenyl or indenofluorenyl basic structure are linked directly to one another. If the index n is 2, 3, or 4, it means that two, three or four groups Ar 1 in series
- the groups “C” in formula (E-1) denote carbon atoms which are part of the ring systems C 1 , C 2 and C 3 .
- the arc between the C atoms indicates that double bonds exist in such a way that all C atoms each have four bonds and three groups each attached to them.
- ring system is understood to mean any rings which can be individual rings, or a system comprising a plurality of individual rings condensed with one another, as occurs, for example, in decalin or fluorene.
- the rings can be the same or different aliphatic, heteroaliphatic, aromatic or heteroaromatic.
- the ring atoms can be selected from carbon and fleteroatoms, in particular C, O, S, Si, B, P and N.
- An aryl group in the sense of this invention is understood to mean either a single aromatic cycle, that is to say benzene, or a condensed aromatic polycycle, for example naphthalene, phenanthrene or anthracene.
- a condensed aromatic polycycle consists of two or more individual aromatic cycles condensed with one another. Condensation between cycles means that the cycles share at least one edge with one another.
- An aryl group in the sense of this invention contains 6 to 40 aromatic ring atoms, none of which is a hetero atom.
- a heteroaryl group means either a single heteroaromatic cycle, for example pyridine, pyrimidine or thiophene, or a condensed heteroaromatic polycycle, for example quinoline or carbazole.
- a condensed heteroaromatic polycycle exists in the sense of the present
- Heteroaryl group in the sense of this invention contains 5 to 40 aromatic ring atoms, at least one of which represents a hetero atom.
- the heteroatoms of the heteroaryl group are preferably selected from N, O and S.
- radicals mentioned can be understood to mean, in particular, groups which are derived from benzene, naphthalene, anthracene, phenanthrene, pyrene, dihydropyrene, chrysene, perylene, triphenylene,
- An aromatic ring system in the sense of this invention is a system which does not necessarily only contain aryl groups, but which can additionally contain one or more non-aromatic rings which are condensed with at least one aryl group. Not this one
- aromatic rings contain only carbon atoms as
- Ring atoms examples of groups included in this definition are tetrahydronaphthalene, fluorene and spirobifluorene.
- aromatic ring system also includes systems which consist of two or more aromatic ring systems which are connected to one another via single bonds, for example biphenyl, terphenyl, 7-phenyl-2-fluorenyl, quaterphenyl and 3,5-diphenyl-1-phenyl.
- An aromatic ring system in the sense of this invention contains 6 to 40 carbon atoms and no heteroatoms in the ring system.
- the definition of “aromatic ring system” does not include heteroaryl groups.
- a heteroaromatic ring system corresponds to that mentioned above
- Ring system not only contain aryl groups and heteroaryl groups, but one or more can not
- Heteroaryl group are condensed.
- the non-aromatic rings can contain only carbon atoms as ring atoms, or they can additionally contain one or more heteroatoms, the
- Heteroatoms are preferably selected from N, O and S.
- An example of such a heteroaromatic ring system is benzopyranyl.
- the term “heteroaromatic ring system” is understood to mean systems which consist of two or more aromatic or heteroaromatic ring systems which are linked to one another via single bonds
- Heteroaromatic ring system in the sense of this invention contains 5 to 40 ring atoms which are selected from carbon and heteroatoms, at least one of the ring atoms being a heteroatom.
- the heteroatoms of the heteroaromatic ring system are preferably selected from N, O and S.
- an aromatic ring system cannot have a hetero atom as a ring atom, whereas a heteroaromatic ring system must have at least one hetero atom as a ring atom.
- This heteroatom can be used as a ring atom of a non-aromatic heterocyclic ring or as a ring atom of one
- each aryl group is included in the term “aromatic ring system” and each heteroaryl group is included in the term “heteroaromatic ring system”.
- aromatic ring system As defined above, each aryl group is included in the term “aromatic ring system” and each heteroaryl group is included in the term “heteroaromatic ring system”.
- aromatic ring system Under an aromatic ring system with 6 to 40 aromatic
- Ring atoms or a heteroaromatic ring system with 5 to 40 aromatic ring atoms are understood in particular to be groups which are derived from the groups mentioned above under aryl groups and heteroaryl groups and from biphenyl, terphenyl, quaterphenyl, fluorene, spirobifluorene, dihydrophenanthrene, dihydropyrene, tetrahydropyrene, truxene, indenofluorene , Isotruxes, spirotruxes, spiroisotruxes,
- a straight-chain alkyl group having 1 to 20 C atoms or a branched or cyclic alkyl group having 3 to 20 C atoms or an alkenyl or alkynyl group having 2 to 40 C atoms in which also individual H atoms or CH2 groups can be substituted by the groups mentioned above when defining the radicals, preferably the radicals methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl, t- Butyl, 2-methylbutyl, n-pentyl, s-pentyl, cyclopentyl, neo-pentyl, n-hexyl, cyclohexyl, neo-hexyl, n-heptyl, cycloheptyl, n-octyl, cyclooctyl, 2-ethyl, n-propy
- radicals can be substituted, preferably methoxy, trifluoromethoxy, ethoxy, n-propoxy, i-propoxy, n-butoxy, i-butoxy, s-butoxy, t-butoxy, n-pentoxy, s-pentoxy, 2nd -Methylbutoxy, n-hexoxy, cyclohexyloxy, n-heptoxy, cycloheptyloxy, n-octyloxy, cyclooctyloxy, 2-ethylhexyloxy, pentafluoroethoxy, 2,2,2-trifluoroethoxy, methylthio, ethylthio, n-propylthio, i-propylthio, n -Butylthio, i-butylthio, s-butylthio, t-butylthio, n-pentylthio, s
- the wording that two or more radicals can form a ring with one another is to be understood, inter alia, to mean that the two radicals are linked to one another by a chemical bond.
- the above-mentioned formulation should also be understood to mean that in the event that one of the two radicals is hydrogen, the second radical binds to the position to which the hydrogen atom was bonded, forming a ring.
- T is preferably equal to B.
- X is preferably chosen the same every time it occurs. X is particularly preferably NR E2 each time it occurs. At least one of the indices o and p is preferably 1, so that at least two groups X are present in the compound, and at least two groups X in the compound are selected from O, S and NR E , particularly preferably NR E.
- C 1 , C 2 and C 3 are preferably chosen to be the same each time they occur. They are furthermore preferably selected from ring systems in which the ring atoms are selected from C, Si, N, P, O, S, B.
- the ring systems can be aliphatic, aromatic, heteroaliphatic or heteroaromatic.
- the individual ring which contains the C atoms shown in formula (E-1) is preferably aromatic or heteroaromatic, particularly preferably aromatic.
- C 1 , C 2 and C 3 are preferably aromatic or heteroaromatic, particularly preferably aromatic.
- C 1 , C 2 and C 3 are preferred for each Appearance the same or different, preferably the same, selected from benzene, naphthalene, fluorene, carbazole, dibenzofuran and dibenzothiophene, each of which is substituted by radicals R E3 .
- C 1 , C 2 and C 3 are particularly preferably equal to benzene, which is in each case substituted by radicals R E3 .
- R E1 is preferably an aromatic or heteroaromatic ring system which is substituted by one or more radicals R E4 .
- R E2 is preferably selected identically or differently from straight-chain alkyl groups with 1 to 20 C atoms, branched or cyclic alkyl groups with 3 to 20 C atoms, aromatic
- R E2 is particularly preferably selected the same or different from aromatic in each occurrence
- Ring systems with 6 to 40 aromatic ring atoms, each of which is substituted by radicals R E4 it being possible for two or more radicals R E2 to be linked to one another and to form a ring, and for one or more radicals R E2 to be selected via their radicals R E4 with a ring can be linked from C 1 , C 2 and C 3 and can form a ring.
- the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred embodiment, the residues R E2 are chosen the same every time they occur. Furthermore, according to a preferred
- R E3 is preferably selected identically or differently from H, D, F, CN, Si (R E4 ) 3, N (R E4 ) 2, straight-chain alkyl or alkoxy groups with 1 to 20 C atoms, branched or cyclic Alkyl or alkoxy groups with 3 to 20 C atoms, aromatic ring systems with 6 to 40
- aromatic ring atoms and heteroaromatic ring systems with 5 to 40 aromatic ring atoms; said alkyl and
- At least one radical R E3 in formula (E-1) is particularly preferably selected from alkyl groups with 1 to 10 C atoms, N (R E4 ) 2, aromatic
- heteroaromatic ring systems with 5 to 40 aromatic ring atoms, the alkyl groups mentioned, the aromatic groups mentioned
- Ring systems and the heteroaromatic ring systems mentioned are each substituted with radicals R E4 .
- At least one radical R E3 in formula (E-1) is very particularly preferably selected from alkyl groups having 1 to 10 C atoms which are substituted by radicals R E4 and N (R E4 ) 2.
- R E4 is preferably selected identically or differently from H, D, F, CN, Si (R E5 ) 3, N (R E5 ) 2, straight-chain alkyl or alkoxy groups with 1 to 20 C atoms, branched or cyclic Alkyl or alkoxy groups with 3 to 20 C atoms, aromatic ring systems with 6 to 40
- aromatic ring atoms and heteroaromatic ring systems with 5 to 40 aromatic ring atoms; said alkyl and
- At least one of the indices o and p is preferably 1.
- One of the indices o and p is particularly preferably 1 and the other of the indices o and p is 0.
- the compound of the formula (E-1) is preferably a mirror-symmetrical compound of a formula (E-1 S)
- the compound of the formula (E-1) corresponds to the formula (E-1 -1)
- the compound of the formula (E-1 -1) corresponds to a mirror-symmetrical compound of the formula (E-1 - 1 S)
- the compound of formula (E-1 -1) is not mirror-symmetrical with respect to the mirror plane shown in formula (E-1 - 1 S).
- - T is B, and / or
- - X is NR E2 , and / or
- At least one radical R E3 is selected from alkyl groups with 1 to 10 C atoms, N (R E4 ) 2, aromatic ring systems with 6 to 40
- aromatic ring atoms and heteroaromatic ring systems with 5 to 40 aromatic ring atoms, wherein the alkyl groups mentioned, the aromatic ring systems mentioned and the heteroaromatic ring systems mentioned are each substituted with radicals R E4 .
- R E2 is preferably phenyl which is substituted by radicals R E4 .
- At least one radical R E3 in the formula (E-1 -1) is very particularly preferably selected from alkyl groups having 1 to 10 C atoms which are substituted by radicals R E4 and N (R E4 ) 2.
- the formula (E-1-1-1) is particularly preferred where Ar E2 is chosen the same or different for each occurrence from aromatic ring systems with 6 to 40 aromatic ring atoms which are substituted with radicals R E4 , and heteroaromatic ring systems with 5 to 40 aromatic ring atoms which are substituted with radicals R E4 , particularly preferably phenyl or biphenyl, each of which is substituted by radicals R E4 .
- the residues Ar E2 are chosen the same every time they occur.
- the residues Ar E2 are selected differently each time they occur.
- At least one radical R E3 is preferably selected
- heteroaromatic ring systems are each substituted with residues R E4 .
- at least one radical R E3 is very particularly preferably selected from alkyl groups having 1 to 10 carbon atoms which are substituted by radicals R E4 and N (R E4 ) 2.
- the compound of the formula (E-1 -1 -1) is mirror-symmetrical with respect to a mirror plane which is perpendicular to the paper plane and contains the bond from boron to the uppermost of the three phenyl groups shown.
- R E2 is phenyl or biphenyl, each of which is substituted by radicals R E4 .
- the compound of the formula (E-1 -1 -1) is not mirror-symmetrical to one
- R E2 is the same or different from phenyl and biphenyl, each of which is substituted by radicals R E4 .
- Ar E1 is chosen the same or different at each occurrence from aromatic ring systems with 6 to 40 aromatic ring atoms which are substituted with radicals R E5 and heteroaromatic ring systems with 5 to 40 aromatic ring atoms which are substituted with radicals R E5
- Ar E2 is chosen the same or different for each occurrence from aromatic ring systems with 6 to 40 aromatic ring atoms which are substituted with radicals R E4
- heteroaromatic ring systems with 5 to 40 aromatic ring atoms which are substituted with radicals R E4 particularly preferably phenyl or biphenyl, each of which is substituted by radicals R E4
- R E3_1 is selected from alkyl groups having 1 to 10 carbon atoms which are substituted by radicals R E4 , preferably methyl, ethyl, n-propyl, i-propyl and tert -Butyl, particularly preferably methyl.
- Ar E1 is preferably selected the same or different for each occurrence from phenyl, biphenyl, terphenyl, fluorenyl, naphthyl, dibenzofuranyl,
- Ar E1 is particularly preferably selected identically or differently from phenyl, o-biphenyl, m-biphenyl, p-biphenyl, terphenyl, p-tolyl, m-tolyl, o-tolyl, p-tert-butyl-phenyl, m tert-butyl-phenyl, o-tert-butyl-phenyl, 9,9'-dimethylfluorenyl, 9,9'-diphenylfluorenyl, naphthyl, naphthyl,
- Dibenzothiophenyl dibenzofuranyl, naphthyl phenylene, dibenzofuranyl phenylene, dibenzothiophenyl phenylene, carbazolyl phenylene,
- the compound of the formula (E-1 -1 -1 -1) or (E-1 -1 -1 -2) is mirror-symmetrical with respect to one
- the two groups Ar E1 can be chosen the same or different and are preferably chosen the same.
- the compound of the formula (E-1 -1 -1 -1) or (E-1 -1 -1 -2) is not mirror-symmetrical with respect to a mirror plane which is perpendicular to the paper plane and the bond from boron contains the top of the three phenyl groups shown.
- the two groups Ar E1 can be selected the same or different and are preferably selected differently.
- R E3_1 is defined as R E3 ; and R E3 2 is selected from alkyl groups with 1 to 10 C atoms which are substituted by radicals R E4 , preferably methyl, ethyl, isopropyl and tert-butyl, particularly preferably methyl; and R E4_1 is defined as R E4 , and the other variables are defined as above.
- R E3 1 and R E4 1 are preferred in each occurrence, chosen the same or different from H, alkyl groups with 1 to 10 carbon atoms which are substituted with radicals R E4 or R E5 and are preferably unsubstituted, and aromatic ring systems with 6 to 40 ring atoms which are substituted with radicals R E4 or R E5 .
- R E3_1 or R E4 1 radicals per benzene ring are preferably selected from alkyl groups with 1 to 10 C atoms, which are substituted by R E4 or R E5 radicals and are preferably unsubstituted, and aromatic ring systems with 6 to 40 ring atoms which are substituted by R E4 or R E5 and the other R E3_1 or R E4 1 are equal to H.
- Formula (E-1 -1 -1 -1) with units marked with a circle are selected identically, and the units marked with a rectangle are also selected identically. All four marked units are particularly preferably selected identically.
- the units marked with a circle and a rectangle are preferably the same or different, preferably the same, selected from appropriately substituted benzene, naphthalene, fluorene, dibenzofuran and dibenzothiophene.
- the compound of the formula (E-1 -1 -1 -1) can be represented as compound A-B containing the two subunits A and B:
- unit A Preferred embodiments of unit A are the following (unit “B” in the formulas correspondingly denotes unit B):
- unit B Preferred embodiments of unit B are the following (unit A in the formulas is correspondingly denoted by “A”):
- Preferred embodiments of the compounds of the formula (E-1 -1-1 -1) are therefore compounds of the following formulas, in which part A and part B of the formula are selected as follows:
- Layer H1 preferably contains a compound of formula (L-1).
- a preferred embodiment of the formula (L-1) is the formula (L-1 -1)
- the index n is preferably 0, so that the amino group is bonded directly to the spirobifluorenyl group. Furthermore, there is preferably at least one group R 1 which is selected from alkyl groups with 1 to 10 C atoms and aromatic ring systems with 6 to 40 aromatic rings
- Ring atoms which are each substituted with R 4 radicals.
- Preferred embodiments of formula (L-1 -1) are formulas (L-1 -1 -1), (L-1 -1 -2) and (L-1 -1 -3)
- R 1 1 is the same or different, preferably the same, each time it is selected from alkyl groups with 1 to 10 carbon atoms, preferably methyl and tert-butyl, and aromatic ring systems with 6 to 40 aromatic ring atoms, each of which is substituted by R 4 , preferably phenyl which is substituted by R 4 , preferably unsubstituted phenyl.
- Z is CR 1 .
- the other variables are defined as above.
- Z is preferably CH.
- Spirobifluorenyl backbone in formula (L-1 -1 -3) also carries
- a compound contained in layer H1 is a compound of the formula (L-1 -1 -1), in particular a compound of Formula (L-1 -1 -1) in which n is 0 and R 1 1 is aromatic
- Is ring system which is substituted with radicals R 4 . It is particularly preferred that n is 0, Z is CH, and R 1 1 is phenyl which is substituted by radicals R 4 .
- index n is preferably equal to 0.
- at least one group R 1 as part of a group Z is selected from alkyl groups with 1 to 10 C atoms, preferably methyl and tert-butyl, and aromatic ring systems with 6 up to 40 aromatic ring atoms, each of which is substituted by radicals R 4 , preferably phenyl which is substituted by radicals R 4 , preferably unsubstituted phenyl.
- Preferred embodiments of the formula (L-3) correspond to one of the formulas (L-3-1) and (L-3-2)
- index n is preferably 0.
- n is preferably 0 or 1, particularly preferably 0.
- R 1 is preferably selected the same or different for each occurrence from H, D, F, CN, Si (R 4 ) 3, N (R 4 ) 2, straight-chain alkyl or alkoxy groups having 1 to 20 C atoms, branched or cyclic Alkyl or alkoxy groups with 3 to 20 C atoms, aromatic ring systems with 6 to 40 aromatic ring atoms, and heteroaromatic ring systems with 5 to 40 aromatic ring atoms; said alkyl and
- R 2 is preferably selected the same or different for each occurrence from alkyl groups with 1 to 10 carbon atoms, aromatic ring systems with 6 to 40 aromatic ring atoms which are substituted with radicals R 4 , and heteroaromatic ring systems which are substituted with radicals R 4 .
- R 2 is particularly preferably selected identically or differently from methyl and phenyl which is substituted by radicals R 4 .
- R 3 is preferably selected the same or different for each occurrence from H, D, F, CN, Si (R 4 ) 3, N (R 4 ) 2, straight-chain alkyl or alkoxy groups with 1 to 20 C atoms, branched or cyclic Alkyl or alkoxy groups with 3 to 20 C atoms, aromatic ring systems with 6 to 40
- aromatic ring atoms and heteroaromatic ring systems with 5 to 40 aromatic ring atoms; said alkyl and
- R 4 is preferably selected the same or different for each occurrence from H, D, F, CN, Si (R 5 ) 3, N (R 5 ) 2, straight-chain alkyl or alkoxy groups with 1 to 20 C atoms, branched or cyclic Alkyl or alkoxy groups with 3 to 20 C atoms, aromatic ring systems with 6 to 40
- aromatic ring atoms and heteroaromatic ring systems with 5 to 40 aromatic ring atoms; said alkyl and
- Ar 1 groups in formulas (L-1), (L-2) and (L-3) and in the preferred embodiments of these formulas are preferably selected identically or differently from divalent groups derived from benzene, biphenyl,
- Ar 1 is very particularly preferably a divalent group derived from benzene, which can in each case be substituted by one or more radicals R 3 .
- Groups Ar 1 can be chosen the same or different for each occurrence.
- Embodiments of these formulas are preferably selected identically or differently from monovalent groups derived from benzene, biphenyl, terphenyl, quaterphenyl, naphthalene, fluorene, in particular 9,9'-dimethylfluorene and 9,9'-diphenylfluorene, benzofluorene, spirobifluorene, indenofluorene, indenocarbazole, dibenzofuran , Dibenzothiophene,
- Benzocarbazole carbazole, benzofuran, benzothiophene, indole, quinoline, pyridine, pyrimidine, pyrazine, pyridazine, and triazine, where the monovalent groups can each be substituted with one or more radicals R 3 .
- the groups Ar 2 can be selected the same or different each time they occur from combinations of groups derived from benzene, biphenyl, terphenyl, quaterphenyl, naphthalene, fluorene, in particular 9,9'-dimethylfluorene and 9,9'-diphenyl fluorene , Benzofluorene, spirobifluorene, indenofluorene, indenocarbazole, dibenzofuran, dibenzothiophene, carbazole, benzofuran, benzothiophene, indole, quinoline, pyridine, pyrimidine, pyrazine, pyridazine and triazine, where the groups can each be substituted by one or more radicals R 3 .
- Ar 2 are chosen the same or different for each occurrence from phenyl, biphenyl, terphenyl, quaterphenyl, naphthyl, fluorenyl, especially 9,9'-dimethylfluorenyl and 9,9'-diphenylfluorenyl, benzofluorenyl, spirobifluorenyl, indenofluorenyl, indenocarbazolyl, dibenzofuranyl , Dibenzothiophenyl, carbazolyl, benzofuranyl, benzothiophenyl, benzo-fused dibenzofuranyl, benzo-fused dibenzothiophenyl, naphthyl-substituted phenyl, fluorenyl-substituted phenyl, spirobifluorenyl-substituted phenyl, dibenzofuranyl-substituted phenyl, carbazyl-substitute
- the layer H2 is preferably an electron blocking layer and preferably adjoins the emitting layer directly on the anode side.
- Layer H2 preferably contains a triarylamine compound.
- Layer H2 particularly preferably contains a mono-triarylamine compound.
- a mono-triarylamine compound is understood to mean a compound which contains one and no more triarylamino groups. It is further preferred that the layer H2 contains a triarylamine compound which has at least one group selected from spirobifluorenyl groups,
- Fluorenyl groups indenofluorenyl groups, dibenzofuranyl groups and Contains dibenzothiophenyl groups. This can be carried out directly or via an aromatic ring system, especially selected from phenylene,
- Biphenylene and fluorenylene as a linker to the nitrogen atom of the amine.
- the spirobifluorenyl group is particularly preferably bonded in the 1, 3 or 4 position, very particularly preferably in the 1 or 4 position, most preferably in the 4 position. The is particularly preferred
- Fluorenyl group bound in 1, 3, or 4-position very particularly preferably in the 4-position.
- a preferred embodiment of the compound of formula (L-1) for use in layer H2 corresponds to a formula (L-1 -2) or (L-1 -3)
- Z is CR 1 and preferably is CH, and the other variables that occur are defined as above.
- a preferred embodiment of the compound of formula (L-2) for use in layer H2 corresponds to a formula (L-2-2)
- the layer H2 contains a compound which is selected from compounds of the formulas (L-1), in particular (L-1 -2); (L-2), especially (L-2-2); (L-3), especially (L-3-1) and (L-3-2); (L-4) and (L-5), where formulas (L-4) and (L-5) are defined as follows:
- Y is O, S or NR 3 ;
- n 0, 1, 2 or 3;
- the unsubstituted positions on the benzene rings can each be substituted by a radical R 3 ; and Ar 1 and Ar 2 are defined as above; and
- Z is CR 1 , preferably CH, and the others
- Layer H1 may contain the compound of formula (L-1), (L-2) or (L-3) as a pure material, or it may contain the compound of formula (L-1), (L-2) or (L -3) in combination with one or more others Connections included. If such further compounds are present, they are preferably selected from p-dopants and from hole-transporting compounds.
- the further hole-transporting compounds are preferably selected from triarylamine compounds, particularly preferably from mono-triarylamine compounds. They are very particularly preferably selected from the preferred specified below
- Embodiments of hole transport materials If the compound of the formula (L-1), (L-2) or (L-3) is present in layer H1 in combination with one or more further hole-transporting compounds, then they and the other hole-transporting compounds are present.
- the layer H1 can be p-doped or it can be undoped.
- preferred p-dopants are those organic electron acceptor compounds which can oxidize one or more of the other compounds in the layer.
- Particularly preferred p-dopants are quinodimethane compounds, azaindenofluorendiones, azaphenalenes, azatriphenylenes,
- Metal halides preferably transition metal halides, metal oxides, preferably metal oxides containing at least one transition metal or a metal of the 3rd main group, and transition metal complexes, preferably complexes of Cu, Co, Ni, Pd and Pt with ligands containing at least one oxygen atom as the binding site.
- transition metal complexes preferably complexes of Cu, Co, Ni, Pd and Pt with ligands containing at least one oxygen atom as the binding site.
- Transition metal oxides as dopants preferably oxides of rhenium, molybdenum and tungsten, particularly preferably Re2Ü7 , M0O3, WO3 and Re03. Further preferred are complexes of bismuth in the oxidation state (III), in particular bismuth (III) complexes with
- the p-dopants are preferably largely uniformly distributed in the p-doped layers. This can be achieved, for example, by co-evaporation of the p-dopant and the hole transport material matrix.
- the p-dopant is preferably present in a proportion of 1 to 10% in the p-doped layer.
- % in terms of% means volume% when mixtures of compounds which are applied from the gas phase are affected. On the other hand, this means mass% when mixtures of compounds which are applied from solution are affected.
- Electron blocking layers preferred are indenofluorenamine derivatives, amine derivatives, hexaazatriphenylene derivatives, amine derivatives with condensed aromatics, monobenzoindenofluorenamines,
- Dibenzoindenofluorenamines Dibenzoindenofluorenamines, spirobifluorene amines, fluorene amines, spiro-dibenzopyran amines, dihydroacridine derivatives, spirodibenzofurans and spirodibenzothiophenes, phenanthrene diarylamines, spiro-tribenzotropolones, spirobifluorenes with meta-phenyldiamine 9-diamine diamine, 9-diamine diamine, 9-diamine diamine, 9-diamine diamine, 9-diamine diamine, 9-diamine diamine diamine, 9-diamine diamine diamine, 9-diamine diamine, di-10-amine, di-8-diamine, diamine-10-diamine, -Dihydroanthracene-spiro compounds with diarylamino groups used.
- the following compounds HT-1 to HT-38 are suitable for use in a layer with a hole-transporting function, in particular in a hole-injection layer, a hole-transport layer and / or an electron blocking layer, or for use in a emitting layer as matrix material, in particular as matrix material in an emitting layer containing one or more
- the compounds HT-1 to HT-38 are generally well suited for the uses mentioned above in OLEDs of all types and
- the electronic device is preferably an organic one
- Electroluminescent device The first electrode of the device is preferably the anode and the second electrode is preferably the cathode.
- Metals with a low work function, metal alloys or multilayer structures are made as the cathode of the electronic device
- alkaline earth metals such as, for example, alkaline earth metals, alkali metals, main group metals or lanthanoids (e.g. Ca, Ba, Mg, Al, In, Mg, Yb, Sm, etc.). Alloys made of an alkali or alkaline earth metal and silver, for example an alloy of, are also suitable
- Magnesium and silver In the case of multilayer structures, other metals can also be used in addition to the metals mentioned, which have a relatively high work function, such as, for example, B. Ag or Al, in which case combinations of the metals, such as Ca / Ag, Mg / Ag or Ba / Ag are usually used. It can also be preferred to introduce a thin intermediate layer of a material with a high dielectric constant between a metallic cathode and the organic semiconductor. For example, alkali metal or
- Alkaline earth metal fluorides but also the corresponding oxides or
- LiF, L12O, BaF2, MgO, NaF, CsF, CS2CO3, etc. Lithium quinolinate (LiQ) can also be used.
- the layer thickness of this layer is preferably between 0.5 and 5 nm.
- the anode preferably has a work function greater than 4.5 eV vs. Vacuum on. Metals with a high redox potential are suitable for this, such as Ag, Pt or Au. On the other hand, metal / metal oxide electrodes (eg Al / Ni / NiOx, Al / PtOx) can also be preferred. For some applications, at least one of the electrodes must be transparent or
- anode materials are conductive mixed metal oxides. Indium tin oxide (ITO) or indium zinc oxide (IZO) are particularly preferred. Also preferred are conductive, doped organic materials, in particular conductive doped polymers. Furthermore, the anode can also consist of several layers, for example, an inner layer made of ITO and an outer layer made of a metal oxide, preferably tungsten oxide, molybdenum oxide or vanadium oxide.
- ITO Indium tin oxide
- IZO indium zinc oxide
- conductive, doped organic materials in particular conductive doped polymers.
- the anode can also consist of several layers, for example, an inner layer made of ITO and an outer layer made of a metal oxide, preferably tungsten oxide, molybdenum oxide or vanadium oxide.
- the device in addition to the anode, cathode, layers H1, H2, and the emitting layer, the device preferably contains further layers, in particular one or more electron-transporting layers. It is further preferred that the device contains a hole injection layer which is directly adjacent to the anode. Layer H1 can assume the function of such a hole injection layer. In this case, it is preferred that the layer H1 is p-doped.
- an additional layer can be present in the device, which takes over the function of a hole injection layer.
- a hole injection layer preferably corresponds to one of the following two embodiments: a) it contains a triarylamine and a p-dopant; or b) it contains a single, very electron-poor material
- the triarylamine is a mono-triarylamine, in particular a triarylamine containing a compound of the formula (L-1), (L-2) or (L-3).
- the electron acceptor is a hexaazatriphenylene derivative, as in
- the device according to the invention preferably contains between anode and cathode:
- HIL hole injection layer
- the emitting layer directly adjacent to the layer H2 on the cathode side.
- the device preferably contains one or more electron-transporting layers on the cathode side of the emitting layer.
- It preferably contains an electron transport layer and an electron injection layer on the cathode side thereof. There can be an additional one between the emitting layer and the electron transport layer
- Hole blocking layer may be arranged.
- the device contains two or three, preferably three, identical or different layer sequences stacked one above the other, each of the
- Layer sequences each include the following layers:
- - Contains a layer H2, which is arranged between the layer H1 and the emitting layer.
- All of the two or three layer sequences preferably contain
- a layer H2 which is arranged between the layer H1 and the emitting layer. All of the two or three layer sequences preferably emit blue light.
- all of the two or three layer sequences contain an emitting layer E which contains a compound of the formula (E-1).
- a double layer of adjacent n-CGL and p-CGL is preferably arranged between the layer sequences, the n-CGL being arranged on the anode side and the p-CGL correspondingly on the cathode side.
- CGL stands for charge generation layer
- a p-doped amine is preferably used in the p-CGL, particularly preferably a material which is selected from the preferred structural classes of
- Suitable materials such as those in the electron injection layer, in the electron transport layer and / or the hole blocking layer of the
- the device according to the invention can be used, for example, the compounds disclosed in Y. Shirota et al., Chem. Rev. 2007, 107 (4), 953-1010 or other materials of the type known from the prior art Layers are used. In particular, all materials which are known according to the prior art for use in these layers can be used as materials for these layers.
- Aluminum complexes for example Alq3, zirconium complexes, for example Zrq4, lithium complexes, for example Liq, benzimidazole derivatives, triazine derivatives, pyrimidine derivatives, pyridine derivatives, pyrazine derivatives, quinoxaline derivatives, quinoline derivatives, are particularly suitable.
- Oxadiazole derivatives aromatic ketones, lactams, boranes,
- Diazaphosphole derivatives and phosphine oxide derivatives are shown in the following table.
- the emitting layer of the device preferably contains one or more further compounds, preferably exactly one further compound.
- the compound of the formula (E-1) represents the emitting compound and the further compound represents the matrix compound.
- the compound of the formula (E-1) is preferably present in the layer in a proportion of 0.5% to 15%, preferably 0.5% to 10%, particularly preferably 3% -6%.
- the further compound is preferably present in the layer in a proportion of 85% to 99.5%, preferably in a proportion of 90% -99.5% and particularly preferably in a proportion of 94% -97%.
- the further compound is preferably selected from compounds which are known in the prior art as matrix materials for fluorescent emitters, in particular compounds selected from the classes of the oligoarylenes (e.g. 2,2 ', 7,7'-tetraphenylspirobifluorene), in particular the Oligoarylenes containing condensed aromatic groups, the oligoarylenes (e.g. 2,2 ', 7,7'-tetraphenylspirobifluorene), in particular the Oligoarylenes containing condensed aromatic groups, the
- Particularly preferred matrix materials are selected from the classes of oligoarylenes containing naphthalene, anthracene, benzanthracene and / or pyrene or atropisomers of these compounds, oligoarylene vinylenes, ketones, phosphine oxides and sulfoxides.
- Very particularly preferred matrix materials are selected from the classes of oligoarylenes containing anthracene, benzanthracene, benzphenanthrene and / or pyrene or atropisomers of these compounds. Most preferred are materials selected from the classes of anthracenes and benzanthracenes. Under a
- oligoarylene is understood to mean a compound in which at least three aryl or arylene groups are bonded to one another.
- the compound of formula (E-1) is preferably a fluorescent one
- the compound can also emit light, also preferably blue light, by the thermally activated delayed fluorescence (TADF) mechanism. In this case it is preferred that
- E LUMO
- matrix i.e. the HOMO energy level of the matrix material
- Si (E) is the energy of the first excited singlet state of the compound of formula (E-1).
- Matrix material of the emitting layer is at most 0.1 eV lower than the energy of the Ti state of the compound of the formula (E-1), hereinafter referred to as Ti (E).
- Ti (matrix)> Ti (E) is particularly preferred. The following applies very particularly preferably: Ti (matrix) - Ti (E)> 0.1 eV, most preferably Ti (matrix) - Ti (E)> 0.2 eV.
- suitable matrix materials in the emitting layer in the case of emission of the compound of formula (E-1) according to the TADF mechanism are ketones, phosphine oxides, sulfoxides and sulfones, triarylamines, carbazole derivatives, e.g. B. CBP (N, N-biscarbazolylbiphenyl), or m-CBP, indolocarbazole derivatives, indenocarbazole derivatives, azacarbazoles, bipolar matrix materials, silanes, azaboroles or boronic esters, diazasilole derivatives, diazaphosphole derivatives, triazine derivatives, zinc complexes, or bridged carbazole derivatives. Electron-transporting organic compounds are also preferred for this use. Are particularly preferred
- Electron-transporting organic compounds which have a LUMO energy level of at most -2.50 eV, particularly preferably at most -2.60 eV, very particularly preferably at most -2.65 eV, and most preferably at most -2.70 eV.
- Particularly preferred matrix materials in the emitting layer in the case of emission of the compound of the formula (E-1) according to the TADF mechanism are selected from the classes of the triazines
- Phosphine oxides the azaphospholes, the azaboroles, which are substituted with at least one electron-conducting substituent, the quinoxalines, the quinolines and the isoquinolines.
- the emitting layer of the device preferably emits blue light.
- the device emits light through the anode and the substrate layer (bottom emission).
- the device emits light through the cathode (top emission).
- the cathode is designed to be partially transparent and partially reflective.
- an alloy of Ag and Mg can be used as the cathode.
- the anode is in this case
- the device preferably contains a coupling-out layer which is applied to the cathode and which preferably contains an amine compound.
- the layer thicknesses in this embodiment are based on those used
- Adapt materials in particular to the refractive index of the Layers and the location of the recombination zone in the emitting layer in order to achieve an optimal resonance effect.
- an excellent efficiency of the OLED, combined with a narrow emission band, can be achieved.
- the device can be structured, contacted and finally sealed in order to exclude damaging effects of water and air.
- the device is characterized in that one or more layers with one
- Sublimation processes are coated.
- the materials are evaporated in vacuum sublimation systems at an initial pressure of less than 10 5 mbar, preferably less than 10 6 mbar. However, it is also possible for the initial pressure to be even lower, for example less than 10 7 mbar.
- one or more layers of the device are coated with the OVPD (Organic Vapor Phase Deposition) method or with the aid of a carrier gas sublimation.
- the materials are applied at a pressure between 10 5 mbar and 1 bar.
- OVJP Organic Vapor Jet Printing
- the materials are applied directly through a nozzle and structured in this way (e.g. BMS Arnold et al., Appl. Phys. Lett. 2008, 92, 053301).
- one or more layers of the device from solution such as. B. by spin coating, or with any one or more layers of the device from solution, such as. B. by spin coating, or with any one or more layers of the device from solution, such as. B. by spin coating, or with any one or more layers of the device from solution, such as. B. by spin coating, or with any one or more layers of the device from solution, such as. B. by spin coating, or with any one or more layers of the device from solution, such as. B. by spin coating, or with any combination thereof
- Printing processes such as B. screen printing, flexo printing, nozzle printing or offset printing, but particularly preferably LITI (Light Induced Thermal Imaging, thermal transfer printing) or ink-jet printing.
- LITI Light Induced Thermal Imaging, thermal transfer printing
- one or more layers of solution and one or more layers are applied by a sublimation process to produce the device.
- a method for producing the device initially comprises
- Provision of a substrate with an anode in a later step the application of the layer H 1, in a later step the application of the layer H2, in a later step the
- the layers H1 and H2 and the emitting layer are preferably applied from the gas phase. All layers between the anode and cathode are particularly preferred
- the devices according to the invention are preferably used in displays, as light sources in lighting applications and as light sources in medical and / or cosmetic applications.
- Glass platelets coated with structured ITO with a thickness of 50 nm form the substrates to which the OLEDs are applied.
- the OLEDs have the following layer structure: substrate / hole
- HIL hole transport layer
- EBL electron blocking layer
- EML emission layer
- the cathode is formed by a 100 nm thick aluminum layer.
- the exact structure of the OLEDs can be found in the following tables. The materials present in the individual layers of the OLED are shown in the following table.
- the emission layer consists of at least one matrix material (host material, host material) and an emitting dopant (dopant, emitter) that passes through the matrix material or the matrix materials
- volume share of 5% is present in the layer.
- Hole injection layer made of a mixture of two materials.
- the OLEDs are characterized by default.
- the operating voltage and the external quantum efficiency (EQE, measured in%) as a function of the luminance, calculated from current-voltage-luminance characteristics, assuming a Lambertian
- the specification EQE @ 10mA / cm 2 denotes the external quantum efficiency that is achieved at 10mA / cm 2 .
- the specification U @ 10 mA / cm 2 denotes the operating voltage at 10 mA / cm 2 .
- OLEDs with the following structure are manufactured:
- the connection used in the HIL and HTL varies.
- the compounds HTM-1 to HTM-4 are used, which are spirobifluorenyl amines or fluorenyl amines.
- the spirobifluorenyl amine EBM-1 is used in all cases.
- the comparison OLED V1 is constructed identically to the OLED E1, with the only difference that the connection SdT is present as the emitter instead of the connection SEB in the emitting layer.
- the half width of the emission is in all cases around 26 nm.
- the comparison OLED V1 shows a significantly poorer efficiency and an increased operating voltage than the corresponding OLED E1 according to the invention.
- OLEDs are also manufactured with the following structures:
- connection HTM-3 is always used in the HIL and the HTL in the OLEDs E5 to E10.
- the compound HTM-3 is a 2-spirobifluorenyl amine which carries a phenyl group as a substituent on the spiro.
- the connection used in the EBL varies. It will be the
- the compounds EBM-2 to EBM-7 are selected from spirobifluorenyl amines, indenofluorenyl amines, fluorenyl amines and amines with phenylene dibenzofuran groups on the amine.
- OLEDs with the following structure are manufactured:
- the substrate is in each case a glass plate which is coated with structured ITO (indium tin oxide) with a thickness of 50 nm.
- the cathode consists of a 15 nm thick layer made of a mixture of 91% Ag and 9% Mg.
- the coupling-out layer consists of a 70 nm thick layer made of the compound HTM-1.
- the structure of the layers HIL, HTL, EBL, EML, ETL and EIL is shown in the following table:
- the emission band of the OLEDs is very narrow and has a half width between 17 and 18 nm.
- the following OLEDs with top emission structure can be produced, in which HTM-1 is replaced by HTM-2, HTM-3 or HTM-4, or EBM-1 by one of the materials EBM- compared to the OLED E11. 2 until the EBM-7 is replaced:
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Abstract
L'invention concerne un dispositif électronique, son utilisation et un procédé pour sa fabrication.
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WO2020075757A1 (fr) * | 2018-10-09 | 2020-04-16 | 出光興産株式会社 | Élément électroluminescent organique et dispositif électronique faisant appel à celui-ci |
WO2020075759A1 (fr) * | 2018-10-09 | 2020-04-16 | 出光興産株式会社 | Élément électroluminescent organique et dispositif électronique l'utilisant |
KR20200047400A (ko) * | 2018-10-26 | 2020-05-07 | 롬엔드하스전자재료코리아유한회사 | 복수 종의 발광 재료 및 이를 포함하는 유기 전계 발광 소자 |
US20220069232A1 (en) * | 2018-11-07 | 2022-03-03 | Idemitsu Kosan Co.,Ltd. | Organic electroluminescence device and electronic apparatus using the same |
-
2019
- 2019-10-28 EP EP19794556.1A patent/EP3887378A1/fr active Pending
- 2019-10-28 JP JP2021531078A patent/JP2022513170A/ja active Pending
- 2019-10-28 WO PCT/EP2019/079334 patent/WO2020108899A1/fr unknown
- 2019-10-28 KR KR1020217019541A patent/KR20210096170A/ko not_active Application Discontinuation
- 2019-10-28 US US17/298,544 patent/US20230058635A1/en active Pending
- 2019-10-28 CN CN201980076507.6A patent/CN113227105A/zh active Pending
- 2019-10-30 TW TW108139253A patent/TW202031865A/zh unknown
Also Published As
Publication number | Publication date |
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KR20210096170A (ko) | 2021-08-04 |
CN113227105A (zh) | 2021-08-06 |
JP2022513170A (ja) | 2022-02-07 |
WO2020108899A1 (fr) | 2020-06-04 |
TW202031865A (zh) | 2020-09-01 |
US20230058635A1 (en) | 2023-02-23 |
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