EP3886139A1 - Aimantation convertible pour cathode rotative - Google Patents

Aimantation convertible pour cathode rotative Download PDF

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Publication number
EP3886139A1
EP3886139A1 EP21161873.1A EP21161873A EP3886139A1 EP 3886139 A1 EP3886139 A1 EP 3886139A1 EP 21161873 A EP21161873 A EP 21161873A EP 3886139 A1 EP3886139 A1 EP 3886139A1
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EP
European Patent Office
Prior art keywords
magnetic component
rotary
cathode assembly
voltage
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP21161873.1A
Other languages
German (de)
English (en)
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EP3886139B1 (fr
Inventor
III Sterling Walker MYERS
Zachary Zembower
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vapor Technologies Inc
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Vapor Technologies Inc
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Publication of EP3886139A1 publication Critical patent/EP3886139A1/fr
Application granted granted Critical
Publication of EP3886139B1 publication Critical patent/EP3886139B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Definitions

  • the present invention relates to a a rotary cathode assembly and a coating system.
  • a cathode assembly that can be used for both cathodic arc coating and magnetron sputtering coating systems is provided.
  • Vacuum coating systems such as magnetron sputtering systems, arc deposition systems, chemical vapor deposition systems, and the like are sold as separate systems. Such coating systems are expensive and are frequently under-utilized.
  • a rotary cathode assembly in at least one aspect, includes a cathode having a tube shape and defining a hollow center, a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode, and a rotary magnet subassembly disposed within the hollow center of the cathode.
  • the rotary magnet subassembly includes a first magnet component having a first magnetic field strength and a second magnetic component having a second magnetic field strength. The first magnetic field strength is greater than the second magnetic field strength.
  • the first magnet component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening.
  • a coating system that can operate in a magnetron sputtering mode or in a cathodic arc deposition mode.
  • the coating system includes a coating chamber and the rotary cathode assembly set forth herein.
  • a rotary cathode assembly comprising: a cathode having a tube shape and defining a hollow center; a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode; and a rotary magnet subassembly disposed within the hollow center of the cathode, the rotary magnet subassembly includes a first magnetic component having a first magnetic field strength and a second magnetic component having a second magnetic field strength, the first magnetic field strength is greater than the second magnetic field strength, wherein the first magnetic component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening.
  • the shield is electrically floating.
  • the first magnetic field strength is from about 50 to 500 Gauss.
  • the second magnetic field strength is from about 10 to 100 Gauss.
  • a substrate to be coated is positioned in front of the access opening.
  • the substrate follows a linear trajectory.
  • the substrate follows a circular trajectory or a planetary three-axis trajectory.
  • the first magnetic component and the second magnetic component are mounted on a support member that is rotated by an electric motor.
  • the cathode has a circular cross section.
  • the cathode is powered by a power system, the power system outputting a first voltage in a first voltage range for cathodic arc and a first current in a first current range for cathodic arc deposition, the power system also outputting a second voltage in a second voltage range and a second current in a second current range for magnetron sputtering.
  • the first voltage range is from 20 to 40 voltage and the first current range is from 100 to 600 A and wherein the second voltage range is from 300 to 1600 volts and the second current range is from 10 to 100 A.
  • a coating system comprising: a coating chamber; and a rotary cathode assembly disposed in the coating chamber, the rotary cathode assembly including: a cathode having a tube shape and defining a hollow center; a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode; and a rotary magnet subassembly disposed within the hollow center of the cathode, the rotary magnet subassembly includes a first magnetic component having a first magnetic field strength and a second magnetic component having a second magnetic field strength, the first magnetic field strength is greater than the second magnetic field strength, wherein the first magnetic component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening.
  • the shield is electrically floating.
  • the first magnetic field strength is from about 50 to 500 Gauss.
  • the second magnetic field strength is from about 10 to 100 Gauss.
  • a substrate to be coated is positioned in front of the access opening.
  • the substrate follows a linear trajectory.
  • the substrate follows a circular trajectory.
  • the first magnetic component and the second magnetic component are mounted on a support member that is rotated by an electric motor or a pneumatic actuator on a lever.
  • the cathode is powered by a power system, the power system outputting a first voltage in a first voltage range for cathodic arc and a first current in a first current range for cathodic arc deposition, the power system also outputting a second voltage in a second voltage range and a second current in a second current range for magnetron sputtering.
  • the first voltage range is from 20 to 40 voltage and the first current range is from 100 to 600 A and wherein the second voltage range is from 300 to 1600 volts and the second current range is from 10 to 100 A.
  • integer ranges explicitly include all intervening integers.
  • the integer range 1-10 explicitly includes 1, 2, 3, 4, 5, 6, 7, 8, 9, and 10.
  • the range 1 to 100 includes 1, 2, 3, 4.... 97, 98, 99, 100.
  • intervening numbers that are increments of the difference between the upper limit and the lower limit divided by 10 can be taken as alternative upper or lower limits. For example, if the range is 1.1. to 2.1 the following numbers 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, and 2.0 can be selected as lower or upper limits.
  • linear dimensions and angles can be constructed with plus or minus 50 percent of the values indicated rounded to or truncated to two significant figures of the value provided in the examples. In a refinement, linear dimensions and angles can be constructed with plus or minus 30 percent of the values indicated rounded to or truncated to two significant figures of the value provided in the examples. In another refinement, linear dimensions and angles can be constructed with plus or minus 10 percent of the values indicated rounded to or truncated to two significant figures of the value provided in the examples.
  • Coating system 10 that includes a rotary cathode assembly 12 that can be used for cathodic arc coating and sputter coating.
  • Rotary cathode assembly 12 includes rotary magnet subassembly 14 and cathode 16.
  • Cathode 16 has a tubular shape and is centered about central axis a 1 .
  • cathode 16 has a circular cross-section.
  • Shield 20 is disposed around rotary cathode assembly 12. In a refinement, shield 20 is an electrically floating shield. Shield 20 defines an access opening 24.
  • the cathode assembly 12 is mounted in coating chamber 26.
  • Figure 1A depicts a chamber with a circular cross-section
  • Figure 1B depicts a chamber with a rectangular cross-section.
  • substrates 28 pass in front of access opening 24 to provide a line-of-sight path from a portion of a surface of cathode 16 to the substrates during coating deposition.
  • Substrate carrier 30 moves the substrates as indicated along direction d 1 .
  • direction d1 is a circular trajectory
  • direction d 1 is a linear trajectory.
  • the trajectory can also be or a planetary three-axis trajectory.
  • Arc striker 31 is also depicted in Figures 1A and 1B .
  • cathode 16 typically has a diameter of at least 100 mm and typically less than about 1 m.
  • Coating chamber 26 will have dimensions sufficient to accommodate the cathode and additional structure. Therefore, coating chamber can have a width (or diameter) of at least 200 mm. Typically, heights for coating chamber 26 are from 0.5 to 3 meters.
  • rotary magnet subassembly 14 includes a first magnetic component 32 having a first magnetic field strength and a second magnetic component 34 having a second magnetic field strength.
  • first magnetic field strength is greater than the second magnetic field strength.
  • the higher magnetic field strength of first magnetic component 32 is suitable for magnetron sputtering while the lower magnetic field strength is more suitable for cathodic arc deposition.
  • the magnetic field strength of the first magnetic component 32 is from about 50 to 500 Gauss while the magnetic field strength of the second magnetic component 22 is from about 10 to 100 Gauss.
  • first magnetic component and the second magnetic component are rotatable along direction d r between a first position P 1 in which the first magnetic component 32 faces the access opening 24 and a second position P 2 in which the second magnetic component 34 faces the access opening 24.
  • First magnetic component 32 and second magnetic component 34 can be mounted on a rotatable support member 38 which is rotated by electric motor 40.
  • first magnetic component 32 and second magnetic component 34 can be mounted on a rotatable support member 38 which is rotated by a pneumatic actuator on a lever.
  • a user operates a controller such that substrates 28 to be coated move in front of access opening 24 (i.e., the substrates are positioned in front of the access opening while being coated).
  • a user operates controller 42 to position the first magnetic component 32 and the first magnetic component 34 for magnetron sputtering or cathodic arc deposition as required.
  • Figures 1A and 1B also depict power system 46 that power cathode 14 providing DC, Pulsed-DC and RF power thereto, gas port 48 for introducing gas as needed, and vacuum port 50.
  • the power system outputs a first voltage in a first voltage range for cathodic arc and a first current in a first current range for cathodic arc deposition.
  • the power system also outputs a second voltage in a second voltage range and a second current in a second current range for magnetron sputtering.
  • the first voltage range is from 20 to 40 voltage and the first current range is from 100 to 600 A and the second voltage range is from 300 to 1600 volts and the second current range is from 10 to 100 A.
  • the pressure is from about 1 mTorr to about 200 mTorr.
EP21161873.1A 2020-03-16 2021-03-10 Aimantation convertible pour cathode rotative Active EP3886139B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US202062989960P 2020-03-16 2020-03-16

Publications (2)

Publication Number Publication Date
EP3886139A1 true EP3886139A1 (fr) 2021-09-29
EP3886139B1 EP3886139B1 (fr) 2024-02-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP21161873.1A Active EP3886139B1 (fr) 2020-03-16 2021-03-10 Aimantation convertible pour cathode rotative

Country Status (6)

Country Link
US (1) US11629399B2 (fr)
EP (1) EP3886139B1 (fr)
JP (1) JP2021147707A (fr)
CN (1) CN113403592A (fr)
BR (1) BR102021004927A2 (fr)
CA (1) CA3111730C (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2255105A (en) * 1991-04-22 1992-10-28 Ion Coat Ltd Dual magnetron/cathodic arc vapour source
US5215638A (en) * 1991-08-08 1993-06-01 Leybold Aktiengesellschaft Rotating magnetron cathode and method for the use thereof
EP2037000A2 (fr) * 2007-09-14 2009-03-18 Sandvik Intellectual Property AB Procédé et appareil pour déposer un revêtement sur un substrat
WO2011060748A1 (fr) * 2009-11-23 2011-05-26 Shm, S.R.O. Procédé de création de couches de dépôt physique en phase vapeur à l'aide d'une cathode cylindrique tournante, et appareil pour la mise en œuvre de ce procédé

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
US5527439A (en) * 1995-01-23 1996-06-18 The Boc Group, Inc. Cylindrical magnetron shield structure
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
JP5069956B2 (ja) * 2007-06-25 2012-11-07 株式会社神戸製鋼所 成膜装置
DE102008033904B4 (de) * 2008-07-18 2012-01-19 Von Ardenne Anlagentechnik Gmbh Antriebsendblock für eine Magnetronanordnung mit einem rotierenden Target
US9093251B2 (en) * 2011-02-18 2015-07-28 Toyota Motor Europe Nv/Sa Sputtering magnetron assembly

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2255105A (en) * 1991-04-22 1992-10-28 Ion Coat Ltd Dual magnetron/cathodic arc vapour source
US5215638A (en) * 1991-08-08 1993-06-01 Leybold Aktiengesellschaft Rotating magnetron cathode and method for the use thereof
EP2037000A2 (fr) * 2007-09-14 2009-03-18 Sandvik Intellectual Property AB Procédé et appareil pour déposer un revêtement sur un substrat
WO2011060748A1 (fr) * 2009-11-23 2011-05-26 Shm, S.R.O. Procédé de création de couches de dépôt physique en phase vapeur à l'aide d'une cathode cylindrique tournante, et appareil pour la mise en œuvre de ce procédé

Also Published As

Publication number Publication date
US11629399B2 (en) 2023-04-18
CA3111730C (fr) 2023-09-26
CA3111730A1 (fr) 2021-09-16
US20210285090A1 (en) 2021-09-16
EP3886139B1 (fr) 2024-02-07
CN113403592A (zh) 2021-09-17
JP2021147707A (ja) 2021-09-27
BR102021004927A2 (pt) 2021-11-09

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