EP3884626A1 - Dispositif d'affaiblissement de réflexions pour un bus d'un système de bus et procédé d'affaiblissement de réflexions lors d'une transmission de données dans un système de bus - Google Patents

Dispositif d'affaiblissement de réflexions pour un bus d'un système de bus et procédé d'affaiblissement de réflexions lors d'une transmission de données dans un système de bus

Info

Publication number
EP3884626A1
EP3884626A1 EP19805219.3A EP19805219A EP3884626A1 EP 3884626 A1 EP3884626 A1 EP 3884626A1 EP 19805219 A EP19805219 A EP 19805219A EP 3884626 A1 EP3884626 A1 EP 3884626A1
Authority
EP
European Patent Office
Prior art keywords
bus
reflection attenuation
attenuation device
bus system
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19805219.3A
Other languages
German (de)
English (en)
Inventor
Andreas Mueller
Steffen Walker
Simon Weissenmayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3884626A1 publication Critical patent/EP3884626A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/0272—Arrangements for coupling to multiple lines, e.g. for differential transmission
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L12/00—Data switching networks
    • H04L12/28—Data switching networks characterised by path configuration, e.g. LAN [Local Area Networks] or WAN [Wide Area Networks]
    • H04L12/40—Bus networks
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/0264—Arrangements for coupling to transmission lines
    • H04L25/0278—Arrangements for impedance matching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L12/00—Data switching networks
    • H04L12/28—Data switching networks characterised by path configuration, e.g. LAN [Local Area Networks] or WAN [Wide Area Networks]
    • H04L12/40—Bus networks
    • H04L2012/40208—Bus networks characterized by the use of a particular bus standard
    • H04L2012/40215—Controller Area Network CAN
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L12/00—Data switching networks
    • H04L12/28—Data switching networks characterised by path configuration, e.g. LAN [Local Area Networks] or WAN [Wide Area Networks]
    • H04L12/40—Bus networks
    • H04L2012/40267—Bus for use in transportation systems
    • H04L2012/40273—Bus for use in transportation systems the transportation system being a vehicle

Definitions

  • Reflection attenuation device for a bus of a bus system and method for attenuating reflections during data transmission in a bus system
  • the present invention relates to a reflection attenuation device for a bus of a bus system, which is in particular a serial bus system, and a method for attenuating reflections during data transmission in a bus system, in which a circuit is used which has at least one capacitor and antiparallel diodes or transistors .
  • a bus system is increasingly used between sensors and control devices, for example in vehicles, in which data is transmitted as messages in the ISO11898-l: 2015 standard as a CAN protocol specification with CAN FD.
  • the messages are transmitted between the subscriber stations of the bus system, such as sensors, control units, transmitters, etc.
  • CAN FD is currently in the first step mostly with a data bit rate of 2Mbi1 / s for the transmission of bits of the data field and with an arbitration bit rate of 500kbit / s for the transmission of bits of the
  • Subscriber stations are used, which are most distant in the bus system. Problems arise, however, if such termination of the bus is not possible, for example if a CAN subscriber station is arranged in the trailer, and the vehicle can be operated with or without a trailer. In this case
  • the trailer has to be connected via a private CAN line or large losses in the data rate have to be accepted.
  • the differential voltage VDIFF on the bus also means that the voltages on the bus are limited to 0 V to 2 V.
  • This can be achieved, for example, with a Zener diode which is connected to an externally supplied operational amplifier circuit which also protects the Zener diode against a short circuit in the bus lines.
  • a Zener diode which is connected to an externally supplied operational amplifier circuit which also protects the Zener diode against a short circuit in the bus lines.
  • such a variant is quite complex due to the operational amplifier required.
  • a reflection attenuation device for a bus of a bus system and a method for attenuating reflections in a
  • Data transmission can be provided in a bus system in which the reflection attenuation can be optimized even at high data rates.
  • the object is achieved by a reflection attenuation device for a bus of a bus system with the features of claim 1.
  • the reflection attenuation device has at least one pair of electrical semiconductor components connected in parallel, and at least one capacitor connected to the at least one pair of parallel connected electrical semiconductor components connected in series to attenuate reflections on a bus line of the bus.
  • the described reflection attenuation device does not generally have to be supplied with an external voltage, but in any case is robust against short circuits and can very well adjust the voltage to a range between, for example, 0 volts and 2 volts or another desired one
  • the electrical circuit of the reflection attenuation device is particularly robust against common mode interference.
  • Reflection attenuation device higher data transfer rates can be achieved.
  • the described reflection attenuation device enables a good reflection suppression of high-frequency common-mode interference to be achieved even with an increase in the bit rate compared to previous bus systems.
  • the data rate in the bus system can be increased without the communication being noticeably impaired due to line reflections.
  • the described reflection damping device ensures that, in the bus system in which the reflection damping device is used, a flexible use of, in particular, CAN FD or its
  • a pair of electrical semiconductor components connected in parallel is connected between two capacitors.
  • a capacitor is connected between two pairs of electrical semiconductor components connected in parallel.
  • the at least one pair of electrical semiconductor components connected in parallel has two diodes connected in anti-parallel.
  • the at least one pair of electrical semiconductor components connected in parallel has two transistors, which are in particular connected in anti-parallel, the transistors
  • bipolar transistors in each of which the base connection and collector connection of one transistor is connected to the emitter connection of the other transistor, or wherein the transistors are field-effect transistors, in which the gate connection and drain connection of the one transistor are connected is connected to the source terminal of the other transistor.
  • the reflection damping device may also have one
  • Voltage divider which is connected in parallel to the series circuit comprising the at least one pair of electrical semiconductor components connected in parallel and the at least one capacitor, the voltage divider optionally being connected to a switching device for connecting or disconnecting the voltage divider.
  • the voltage divider has three resistors which are connected in series to one another, and the mean resistance of the
  • the voltage divider is connected in parallel with the capacitor, the mean resistance having a resistance that is about half the resistance of the other two resistors of the voltage divider, and the resistance of the mean resistance is greater than about 10 kOhm or about 1 kOhm .
  • the reflection damping device can also have at least one switchable voltage source which has an impedance converter. It is possible for the impedance converter to have an operational amplifier the output of which is connected to a series connection of two diodes, the series connection of two diodes being connected in parallel to the one capacitor.
  • the reflection attenuation device described above can be part of a subscriber station for a bus system, which also has a transmission and
  • the reflection attenuation device can be integrated into the transmitting and receiving device.
  • the subscriber station may also have one
  • Communication control device for generating and sending messages to the transmitting and receiving device and for receiving and evaluating messages from the sending and receiving device
  • Communication control device is configured to generate the messages such that in the first communication phase for sending the
  • Messages on the bus between the subscriber stations of the bus system is negotiated, which of the subscriber stations in the subsequent second communication phase has at least occasionally exclusive, collision-free access to the bus of the bus system.
  • At least two subscriber stations can be part of a bus system which also has a bus, so that the at least two subscriber stations are connected to one another via the bus in such a way that they can communicate with one another in series.
  • the bus system has at least one previously described reflection attenuation device for at least one bus line of the bus.
  • the at least one reflection attenuation device can be connected to a branch point of the bus.
  • the at least one reflection attenuation device can terminate a free end of the bus.
  • at least one of the at least two subscriber stations may be one previously described
  • the aforementioned object is also achieved by a method for attenuating reflections during data transmission in a bus system according to claim 15.
  • the process has the steps of sending a message in the
  • Bus system via a bus, on the at least one bus line of which
  • Reflection attenuation device which has at least one pair of parallel electrical semiconductor components, and at least one capacitor connected to the at least one pair of parallel
  • connected electrical semiconductor components are connected in series, and attenuating, with the reflection attenuation device, from reflections on a bus line of the bus.
  • Reflection attenuation device are called.
  • FIG. 1 shows a simplified block diagram of a bus system according to a first exemplary embodiment
  • FIG. 2 shows an electrical circuit of a reflection damping device for the bus system according to the first exemplary embodiment
  • FIG. 3 shows an electrical circuit of a reflection attenuation device for a bus system according to a second exemplary embodiment
  • 4 shows an electrical circuit of a reflection attenuation device for a bus system according to a third exemplary embodiment
  • FIG. 5 shows an electrical circuit of a reflection attenuation device for a bus system according to a fourth exemplary embodiment
  • FIG. 6 shows an electrical circuit of a reflection attenuation device for a bus system according to a fifth exemplary embodiment
  • FIG. 7 shows an electrical circuit of a reflection attenuation device for a bus system according to a sixth exemplary embodiment
  • FIG. 8 shows an electrical circuit of a reflection attenuation device for a bus system according to a seventh exemplary embodiment
  • FIG. 9 shows an electrical circuit of a reflection attenuation device for a bus system according to an eighth exemplary embodiment.
  • FIG. 10 shows an electrical circuit of a reflection attenuation device for a bus system according to a ninth exemplary embodiment.
  • bus system 1 shows an example of a bus system 1, which is configured in particular fundamentally for a classic CAN bus system, a CAN FD bus system or CAN FD successor bus systems, as described below.
  • the bus system 1 can be used in a vehicle, in particular a motor vehicle, an aircraft, etc., or in a hospital, etc.
  • the bus system 1 has a multiplicity of subscriber stations 10, 20, 30, each of which is connected to a bus 40 with a first bus line 41 and a second bus line 42.
  • Bus 40 is in the example of FIG completed several points with a reflection attenuation device 50. Of this, a reflection attenuation device 50 is provided at the subscriber station 30.
  • the subscriber stations 10, 20 are each connected to the bus 40 with a spur line, which also has a
  • Reflection attenuation device 50 is completed.
  • the subscriber stations 10, 20 are arranged in a passenger car (car) or truck (truck), whereas the
  • Subscriber station 30 is housed in a trailer that is attached to the car or truck as needed. As a result, subscriber station 30 is only connected to bus system 1 as required.
  • Subscriber stations 10, 20, 30 or at least one subscriber station in addition to the subscriber stations 10, 20, 30 is connected to the bus 40 as required or is separated from the bus 40.
  • the bus lines 41, 42 can also be called CAN_H and CAN_L and are used, using a TX signal in the transmit state, for electrical signal transmission after coupling in of the dominant levels or states 401 or generation or active driving of recessive levels or states 402.
  • the states 401, 402 are only shown very schematically in the subscriber station 20.
  • the states 401, 402 correspond to the states of a TX signal from a transmitting subscriber station 10, 20, 30.
  • the signals from the subscriber stations 10, 20, 30 become an RX signal receive.
  • Messages 45, 46 in the form of the signals CAN_H and CAN_L can be transmitted serially between the individual subscriber stations 10, 20, 30 via the bus 40.
  • a differential bus voltage VDIFF CAN_H - CAN_L is calculated from the signals CAN_H and CAN_L on the two bus lines 41, 42.
  • Subscriber stations 10, 20, 30 are, for example, control devices, sensors, display devices, etc. of a motor vehicle.
  • subscriber station 10 has one
  • the subscriber station 20 has a communication control device 21 and a transceiver 22.
  • the subscriber station 30 has one
  • the transmitting / receiving devices 12, 22, 32 of the subscriber stations 10, 20, 30 are each connected directly to the bus 40, even if this is not illustrated in FIG. 1.
  • the transmitting / receiving devices 12, 22 are each connected to the bus 40 with a spur line.
  • the communication control devices 11, 21, 31 each serve to control communication of the respective subscriber station 10, 20, 30 via the bus 40 with one or more other subscriber stations of the subscriber stations 10, 20, 30, which are connected to the bus 40.
  • the communication control devices 11, 21, 31 each serve to control communication of the respective subscriber station 10, 20, 30 via the bus 40 with one or more other subscriber stations of the subscriber stations 10, 20, 30, which are connected to the bus 40.
  • Communication control devices 11, 21, 31 each have a transmission signal, which is also called a TX signal, for the messages 45, 46 to be transmitted and send the TX signal to the associated transmission and reception device 12, 22, 32.
  • the respective communication control device can 11, 21, 31 a receive signal, which is also called an RX signal, for the message 45, 46 received by the bus 40 from the associated transmit and
  • the communication control devices 11, 21, 31 can generate the messages 45, 46 in such a way that in a first communication phase for sending the messages 45, 46 on the bus 40 between the subscriber stations 10, 20, 30, which of the subscriber stations 10, 20 is negotiated , 30 in the
  • subsequent second communication phase at least temporarily has exclusive, collision-free access to bus 40 of bus system 1.
  • the useful data of the messages 45, 46 can be sent on the bus 40.
  • the communication control device 11 can be designed like a conventional Classical CAN or CAN FD controller.
  • Communication control device 11 creates and reads first messages 45, which are, for example, Classical CAN messages or CAN FD messages.
  • the Classical CAN messages are constructed in accordance with the Classical basic format, in which a number of up to 8 data bytes can be included in the first message 45.
  • the CAN FD message is in accordance with the CAN FD format built up, in which a number of up to 64 data bytes can be included, which in addition with a much faster and thus higher
  • the transceiver 12 can be designed like a conventional CAN transceiver and / or CAN FD transceiver.
  • Each of the communication control devices 21, 31 creates and reads first messages 45, as described above, or optionally second messages 46.
  • the second messages 46 are constructed on the basis of a format which is referred to as the CAN FD successor format and, for example, data in the data phase can transmit a higher bit rate than CAN FD.
  • Each of the transmitting / receiving devices 22, 32 can be designed as a CAN transceiver, which, as required, provides one of the previously described first messages 45 or a second message 46 in accordance with the CAN FD successor format for the associated communication control device 21, 31 or receives it from the latter can.
  • FIG. 2 shows an electrical circuit of the reflection attenuation device 50 for the bus lines 41, 42 of the bus 40 according to the present
  • a first anti-parallel diode pair 51, a second anti-parallel diode pair 52 and a capacitor 53 are connected in series at the line ends of the bus lines 41, 42, in other words between the lines for the signals CAN_H and CAN_L.
  • the capacitor 53 is connected between the two anti-parallel diode pairs 51, 52.
  • the diodes of the diode pairs 51, 52 are each electrical
  • Threshold voltage that indicates a current flow through the electrical Semiconductor component has the voltage on the electrical
  • the threshold voltage has, for example, a value of 0.7 V.
  • the current through the diode can be exceeded after the
  • the threshold voltage increases from approx. 0 mA to, for example, 100 mA, whereas the voltage only increases to approx. 0.8 V.
  • the semiconductor depending on the semiconductor, other values for the threshold voltage and the current strength after exceeding the threshold voltage are possible.
  • the current flow through the diode or the electrical semiconductor component is therefore not proportional to the applied voltage after the threshold voltage has been exceeded. This applies both in the forward direction of the diode and in
  • a voltage UD of 0.5 volts is applied to the diodes of the antiparallel diode pairs 51, 52, as shown in FIG. 2.
  • VDIFF differential voltages
  • VDIFF differential voltages between 0 volts and 2 volts
  • the electrical circuitry of the reflection attenuation device 50 does not require additional voltage. Therefore, the reflection attenuation device 50 may be preferred
  • a branch point of the bus 40 is in particular a star point or a stub line connection for a subscriber station 10, 20 to the bus 40.
  • An otherwise customary line termination which is implemented with at least one resistor, may be present on the plugs or line ends on the transceivers 12, 22, 32 (transceiver).
  • the reflection attenuation device 50 overall forms a very simple electronic device which can very well reduce the reflections at the end of the bus lines 41, 42.
  • the voltages can be limited to 0 to 2 volts without the need for an additional supply voltage.
  • the reflection attenuation device 50 is robust against short circuits in the bus lines 41, 42.
  • the bus system 1 can have at least one reflection attenuation device 50 and / or at least one reflection attenuation device 50A, as described above in relation to the device 50.
  • the circuit of the reflection attenuation device 50A in FIG. 3 has antiparallel transistor pairs 51A, 52A instead of the diode pairs 51, 52.
  • the transistor pairs 51A, 52 A in the case of bipolar transistors, that is Base connection and collector connection of one transistor connected to the emitter connection of the other transistor.
  • the gate connection and drain connection of one transistor are connected to the source connection of the other transistor in the transistor pairs 51 A, 52 A.
  • a voltage UT forms at the transistors, as shown in FIG. 3.
  • Transistors are also electrical semiconductor components in which the current flow through the electrical semiconductor component after the threshold voltage of the transistor has been exceeded is not proportional to the voltages at the transistor. Such voltages on the transistor are present, for example, between the base connection and the emitter connection or between the collector connection and the emitter connection.
  • the reflection attenuation device 50 of FIG. 2 The reflection attenuation device 50 of FIG. 2. However, the characteristics of the transistors of the reflection attenuation device 50A of the present embodiment are steeper than those of the diodes of FIG.
  • Reflection attenuation device 50 of FIG. 2 This better restricts voltages above 2 volts and below 0 volts in the reflection attenuation device 50A of the present embodiment than in that
  • Differential voltages on bus 40 can be better limited in areas that are less than 2 volts.
  • FIG. 4 shows an electrical circuit of a reflection attenuation device 50B, which is connected to the bus lines 41, 42 of the bus 40 according to a third exemplary embodiment.
  • the reflection attenuation device 50B can be used instead of at least one reflection attenuation device 50, 50A for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can have at least one of the reflection attenuation devices 50, 50A, 50B, as described above with respect to the device 50.
  • Reflection attenuation device 50 two resistors 55, 56 attached. Here, the reflection attenuation device 50 is between the two resistors 55, 56 attached. Here, the reflection attenuation device 50 is between the two
  • the reflection damping device 50B can be used particularly well on plug-in connections in which the bus 40 is used for additional purposes
  • Subnets is expanded during operation and the circuit is thus temporarily attached to the end of a stub line and temporarily within the bus 40.
  • the ohmic behavior of the diode pairs 51, 52 can be taken into account and the terminating resistors 55, 56 can be reduced accordingly, so that overall the desired terminating resistor, in particular 120 ohms, is obtained for voltages greater than 2 volts and less than 0 volts .
  • Diode pairs 51, 52 provided the transistor pairs 51A, 51B.
  • the reflection attenuation device 50A is connected between the two resistors 55, 56.
  • the resistor 55 is connected between the pair of diodes 51 and the capacitor 53 and the resistor 56 is connected between the pair of diodes 52 and the capacitor 53.
  • Resistor 55 is connected between transistor pair 51 A of FIG. 3 and capacitor 53 and resistor 56 is connected between transistor pair 51 A of FIG. 3 and capacitor 53.
  • 5 shows an electrical circuit of a reflection attenuation device 50C which is connected to the bus lines 41, 42 of the bus 40 according to a fourth exemplary embodiment.
  • the reflection attenuation device 50C can be used instead of at least one reflection attenuation device 50, 50A, 50B for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can have at least one of the reflection attenuation devices 50, 50A, 50B, 50C, as previously described with respect to the device 50.
  • the differential voltages VDIFF are limited to 0.4 volts and below 0 volts.
  • the capacitors 53, 54 are charged from 0.2 volts to more than 0.1 volts due to the voltage UD developing at the respective diode of the diode pair 51.
  • the voltages UC of the capacitors 53, 54 have reached a value of 0.1 volt, with differential voltages VDIFF between 0 volts and 0.4 volts, no more current I flows through the capacitors 53, 54, as long as the differential voltage VDIFF has the range between 0 and does not leave 0.4 volts.
  • a compensating current flows as current I, which reduces the differential voltage VDIFF.
  • a compensating current flows as current I, which
  • the transistor pair 51 A of FIG. 2 is provided instead of the diode pair 51.
  • Reflection attenuation device 50C connected between the resistors 55, 56 of FIG. 4. According to yet another modification to the circuit of FIG. 5, the
  • Resistor 55 is connected between diode pair 51 and capacitor 53, and resistor 56 is connected between diode pair 51 and capacitor 54.
  • Resistor 55 is connected between transistor pair 51A of FIG. 3 and capacitor 53 and resistor 56 is connected between transistor pair 51A of FIG. 3 and capacitor 54.
  • FIG. 6 shows an electrical circuit of a reflection attenuation device 50D which is connected to the bus lines 41, 42 of the bus 40 according to a fifth exemplary embodiment.
  • the reflection attenuation device 50D can be used instead of at least one reflection attenuation device 50, 50A, 50B, 50C for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can have at least one of the reflection attenuation devices 50, 50A, 50B, 50C, 50D, as described above with respect to the device 50.
  • an anti-parallel Darlington transistor pair 51B is inserted at the line ends of the bus lines 41, 42 between two capacitors 53, 54.
  • the Darlington transistors have a base connection and
  • the characteristic curve of the reflection damping device 50D compared to the reflection damping device 50A according to the circuit of FIG. 3 with anti-parallel transistors becomes even steeper.
  • Threshold voltage is higher in the reflection attenuation device 50D, as a result of which the circuit can preferably be used for higher differential voltage ranges, for example 0 volts and 2 volts.
  • the capacitor 53 is connected between the two anti-parallel Darlington transistor stage pairs 51B.
  • FIG. 7 shows an electrical circuit of a reflection attenuation device 50 E connected to the bus lines 41, 42 of the bus 40 according to a sixth
  • the reflection attenuation device 50E can be used instead of at least one reflection attenuation device 50, 50A, 50B, 50C, 50D for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 may have at least one of the reflection attenuation devices 50, 50A, 50B, 50C, 50D, 50E, as previously described with respect to the device 50.
  • an external voltage divider 57 is provided, which is a series connection of resistors 571, 572, 573
  • connection of the resistors 571, 572 is connected to the connection of the diode pair 51 and the capacitor 53.
  • the connection of the resistors 571, 572 is connected to the connection of the diode pair 51 and the capacitor 53.
  • Resistors 572, 573 is connected to the diode pair 52 and the
  • Capacitor 53 connected.
  • the voltage divider 57 is supplied by a voltage VS, which in the example shown for the CAN bus system 1 corresponds in particular to 5V, which is specified in the CAN protocol specification mentioned above for the supply voltage CAN supply.
  • the external voltage divider 57 takes into account the effect of the diode pairs 51,
  • the lowest possible resistance values for the resistors 571, 572, 573 are recommended in order to avoid voltage deviations from ideal IV am Compensate capacitor 53 as quickly as possible. However, are high
  • Resistance values for the resistors 571, 572, 573 of the voltage divider 57 are desired in order to asymmetrical current feeds
  • a resistance R> 10 kOhm for the resistor 572 can prove to be favorable.
  • the resistance values of the resistors 571, 572, 573 are selected such that the resistor 571 has a resistance value of 2R and the resistor 571 has a resistance value of 2R.
  • resistor 572 has a resistance value that is greater than 10 kOhm.
  • the reflection attenuation device 50F can be used instead of at least one reflection attenuation device 50, 50A, 50B, 50C, 50D, 50E for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can thus have at least one of the
  • the reflection attenuation device 50 F is different from that
  • the external voltage divider 57 can be switched by means of switches 58, 59.
  • the switches 58, 59 allow the influences of high
  • the voltage divider 57 is only used to stabilize the
  • the permissible range for stabilizing the voltage UC am Capacitor 53 depends on the selected resistance value for R and thus on the selected resistance value of resistors 571, 572, 573.
  • the difference in the currents through the common mode voltage is decisive for the voltage range and the resistance value R. The difference must be negligible. In particular, approximately 1 kOhm can be selected as the resistance value R.
  • FIG. 9 shows an electrical circuit of a reflection attenuation device 50G, which is connected to the bus lines 41, 42 of the bus 40 according to an eighth exemplary embodiment.
  • the reflection attenuation device 50G can be used instead of at least one reflection attenuation device 50, 50A, 50B, 50C, 50D, 50E, 50F for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can thus have at least one of the
  • the reflection attenuation device 50G is a switchable
  • Voltage source 60 is provided. With the voltage source 60, the voltage source 60, the voltage source 60, the voltage source 60, the voltage source 60, the voltage source 60, the
  • Reflection attenuation device 50 F can be enlarged.
  • the voltage source 60 has an operational amplifier 61 which is connected to a diode circuit 62 at its inverting input.
  • the inverting input is connected to the cathode of the diode of the diode circuit 62.
  • the connection between the resistors 571, 572 is connected to the other input of the operational amplifier 61.
  • the anode of the diode of the diode circuit 62 is connected to the output of the operational amplifier 61.
  • the diode of the diode circuit 62 is therefore in the
  • the output of operational amplifier 61 is also connected to a series circuit of diodes 63, 64 and resistor 573.
  • the voltage source 60 is switched on or off using switches 66, 67, which are connected via resistors 68,
  • the operational amplifier 61 forms one with its wiring
  • Impedance converter that generates a voltage that is 0.5 volts above that
  • Bus lines 41, 42 is located.
  • a voltage of 1 volt is formed across the two serial diodes 63, 64, as a result of which a current I flows, with which the capacitor 53 is fed via the two resistors 68, 69 and switches 67, 68.
  • the voltage source 60 is only switched on as long as the
  • Operational amplifier 61 can drive the required voltage and this is sufficiently larger than U_min.
  • the switches 58, 59 allow the influences of high
  • FIG. 10 shows an electrical circuit of a reflection attenuation device 50H which is connected to the bus lines 41, 42 of the bus 40 according to a ninth exemplary embodiment.
  • the reflection attenuation device 50H can be used instead of at least one reflection attenuation device 50, 50A, 50B, 50C, 50D, 50E, 50F, 50G for the bus lines 41, 42 of the bus 40 from FIG. 1.
  • the bus system 1 can thus have at least one of the
  • two reflection switches 50H can be switched on
  • Voltage sources 60, 60A are provided, which are designed as impedance converters.
  • the second switchable voltage source 60A has one
  • Operational amplifier 61A which is connected to a diode circuit 62A at its inverting input.
  • Operational amplifier 61A is connected to the anode of the diode of diode circuit 62A.
  • the connection between the resistors 571, 572 is connected to the other input of the operational amplifier 61A.
  • the cathode of the diode of the diode circuit 62A is connected to the output of the operational amplifier 61A.
  • the diode of the diode circuit 62A is therefore in the
  • the operational amplifier 61 forms one with its wiring
  • Impedance converter that generates a voltage that is 0.5 volts above that
  • Bus lines 41, 42 is located.
  • the operational amplifier 61A with its circuitry forms an impedance converter that generates a voltage that is 0.5 volts below the center voltage. This sets the voltage across capacitor 53 at 1 volt.
  • Operational amplifiers 61, 61A are only switched on as long as the common mode voltage is in a range tolerated by the operational amplifiers 61, 61A, that is to say as long as the operational amplifiers 61, 61A can still work precisely enough.
  • Bus lines 41, 42 are damped and common mode interference or
  • Push-pull disorders can be derived effectively.
  • bus system 1 and the method carried out therein can be used individually or in all possible combinations.
  • Reflection attenuation devices 50, 50A, 50B, 50C, 50D, 50E, 50F, 50G, 50H are integrated in one of the transceiver 12, 22, 32. This is particularly useful if the transmitting / receiving device 12, 22, 32, as is often the case, is located at one end of the bus lines 41, 42 and here reflections can arise. Such a design and integration of
  • Reflection attenuation devices 50, 50A, 50B, 50C, 50D, 50E, 50F, 50G, 50H in one of the transceiver 12, 22, 32 are also advantageous in that structures already present can be reused, for example for detecting the DC voltage.
  • reflection attenuation devices 50, 50A, 50B, 50C, 50D, 50E, 50F, 50G, 50H are described in relation to the CAN bus system, the invention is not limited to this.
  • the reflection attenuation devices 50, 50A, 50B, 50C, 50D, 50E, 50F, 50G, 50H of the exemplary embodiments and their modifications can be used in all branched bus systems, that is to say not only in CAN and CAN FD networks.
  • SPI Serial Peripheral Interface
  • bus system 1 is described using a bus system based on the CAN protocol.
  • the bus system 1 according to the exemplary embodiments can also be another type of communication network in which data is serial with two
  • bus system 1 has exclusive, collision-free access at least for certain periods of time
  • Subscriber station 10, 20, 30 is guaranteed on a common channel.
  • Bus system 1 of the exemplary embodiments is arbitrary.
  • the subscriber station 10 in the bus system 1 can be omitted. It is possible for one or more of the subscriber stations 20 or 30 to be present in the bus system 1.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Dc Digital Transmission (AREA)
  • Small-Scale Networks (AREA)

Abstract

La présente invention concerne un dispositif d'affaiblissement de réflexions (50 ; 50A ; 50B ; 50C ; 50D ; 50E ; 50F ; 50G ; 50H) pour un bus (40) d'un système de bus (1) et un procédé d'affaiblissement de réflexions lors d'une transmission de données dans un système de bus (1). Le dispositif d'affaiblissement de réflexions (50 ; 50A ; 50B ; 50C ; 50D ; 50E ; 50F ; 50G ; 50H) peut terminer une extrémité libre de lignes de bus (41 ; 42) du bus (40), en particulier dans un dispositif d'émission et de réception (12 ; 22 ; 32) d'une station (10 ; 20 ; 30) participante au système de bus (1). En variante, le dispositif d'affaiblissement de réflexions (50 ; 50A ; 50B ; 50C ; 50D ; 50E ; 50F ; 50G ; 50H) peut être branché à un point de bifurcation du bus (40), qui est en particulier un point étoile ou peut servir de branchement d'une station (10 ; 20) participante au bus (40). De cette façon, des participants au bus dans une remorque de véhicule peuvent également être branchés, en cas de besoin, au système de bus (1) du véhicule. Le dispositif d'affaiblissement de réflexions (50 ; 50A ; 50B ; 50C ; 50D ; 50E ; 50F ; 50G ; 50H) comporte au moins une paire (51 ; 52 ; 51A ; 52A ; 51B) de composants semi-conducteurs électriques montés en parallèle, et au moins un condensateur (53 ; 54), qui est branché en série à la ou aux paires (51 ; 52 ; 51A ; 52A ; 51B) de composants semi-conducteurs électriques montés en parallèle, pour affaiblir des réflexions sur une ligne de bus (41 ; 42) du bus (40).
EP19805219.3A 2018-11-22 2019-11-13 Dispositif d'affaiblissement de réflexions pour un bus d'un système de bus et procédé d'affaiblissement de réflexions lors d'une transmission de données dans un système de bus Withdrawn EP3884626A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018220069.6A DE102018220069A1 (de) 2018-11-22 2018-11-22 Reflexionsdämpfungsvorrichtung für einen Bus eines Bussystems und Verfahren zum Dämpfen von Reflexionen bei einer Datenübertragung in einem Bussystem
PCT/EP2019/081185 WO2020104275A1 (fr) 2018-11-22 2019-11-13 Dispositif d'affaiblissement de réflexions pour un bus d'un système de bus et procédé d'affaiblissement de réflexions lors d'une transmission de données dans un système de bus

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EP3884626A1 true EP3884626A1 (fr) 2021-09-29

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US (1) US11750176B2 (fr)
EP (1) EP3884626A1 (fr)
CN (1) CN113016164B (fr)
DE (1) DE102018220069A1 (fr)
WO (1) WO2020104275A1 (fr)

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DE102019220022A1 (de) * 2019-12-18 2021-06-24 Robert Bosch Gesellschaft mit beschränkter Haftung Sende-/Empfangseinrichtung für ein Bussystem und Verfahren zur Reduzierung von Schwingungen einer Busdifferenzspannung bei eingekoppelten Störungen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364700B1 (fr) 1988-10-18 1995-05-03 ANT Nachrichtentechnik GmbH Circuit de couplage à un bus
DK173291D0 (da) 1991-10-14 1991-10-14 Ole Cramer Nielsen Datakommunikationssystem af feltbus-type, med et tolederkabel til baade stroemforsyning af tilsluttede enheder og dataoverfoering mellem disse
DE19611944C2 (de) * 1996-03-26 2003-03-27 Daimler Chrysler Ag Integrierter Schaltkreis zur Kopplung eines mikrokontrollierten Steuergerätes an einen Zweidraht-Bus
US6625682B1 (en) * 1999-05-25 2003-09-23 Intel Corporation Electromagnetically-coupled bus system
DE10211834A1 (de) * 2002-03-16 2003-09-25 Philips Intellectual Property Fahrzeug-Datennetzwerk
DE102013222786A1 (de) * 2013-11-08 2015-05-13 Robert Bosch Gmbh Teilnehmerstation für ein Bussystem und Verfahren zur Reduzierung von leitungsgebundenen Emissionen in einem Bussystem
DE102014209694A1 (de) * 2014-05-21 2015-11-26 Robert Bosch Gmbh Teilnehmerstation für ein Bussystem und Verfahren zur Erhöhung der Störfestigkeit im Bereich der elektromagnetischen Verträglichkeit für eine Teilnehmerstation
CN108353016B (zh) * 2015-11-05 2020-11-27 日立汽车系统株式会社 中继装置、电子控制装置以及车载网络系统
JP6530557B2 (ja) * 2016-03-25 2019-06-12 日立オートモティブシステムズ株式会社 車載処理装置及び車載システム
US10592458B1 (en) * 2018-09-18 2020-03-17 Apple Inc. Bimodal impedance matching terminators
EP3917100A1 (fr) * 2020-05-26 2021-12-01 Nxp B.V. Contrôleur de réseau de zone de commande et émetteur-récepteur
US11522872B2 (en) * 2020-06-18 2022-12-06 Nxp B.V. CAN transceiver

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CN113016164A (zh) 2021-06-22
US20210409003A1 (en) 2021-12-30
US11750176B2 (en) 2023-09-05
DE102018220069A1 (de) 2020-05-28
CN113016164B (zh) 2023-01-06
WO2020104275A1 (fr) 2020-05-28

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