EP3853913A1 - Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips - Google Patents
Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchipsInfo
- Publication number
- EP3853913A1 EP3853913A1 EP19769789.9A EP19769789A EP3853913A1 EP 3853913 A1 EP3853913 A1 EP 3853913A1 EP 19769789 A EP19769789 A EP 19769789A EP 3853913 A1 EP3853913 A1 EP 3853913A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- structures
- layer sequence
- semiconductor layer
- semiconductor structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 320
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000002073 nanorod Substances 0.000 claims abstract description 14
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 description 12
- 238000009413 insulation Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- -1 Nitride compound Chemical class 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- An optoelectronic semiconductor chip is specified.
- One task to be solved is a particularly efficient optoelectronic semiconductor chip
- Another object to be solved is a method for producing such
- the semiconductor chip can, for example, in
- Laser diode chip can be used.
- the semiconductor chip is suitable, for example, for use in video screens or in headlights, in particular headlights
- the semiconductor chip is also suitable for mounting Vehicles.
- the semiconductor chip is also suitable for mounting Vehicles.
- Sensors such as 3D sensors.
- the optoelectronic semiconductor chip comprises a semiconductor layer sequence.
- the semiconductor layer sequence is preferably continuous, in particular simply continuous.
- the semiconductor layer sequence is based, for example, on a III-V compound semiconductor material.
- semiconductor material is a
- Nitride compound semiconductor material such as Al n In ] __ nm Ga m N, or a phosphide compound semiconductor material such as
- Compound semiconductor material such as Al n In ] __ nm Ga m As or Al n In ] __ nm Ga m AsP, where 0 dn ⁇ 1, 0 dm ⁇ 1 and m + n ⁇ 1, respectively.
- the semiconductor layer sequence can be
- Semiconductor layer sequence ie Al, As, Ga, In, N or P, specified, even if these can be partially replaced and / or supplemented by small amounts of other substances.
- the semiconductor layer sequence is preferably based on AlInGaN.
- Semiconductor layer sequence for example, is at most 5% or at most 10% larger than the lateral extent of the semiconductor layer sequence.
- the optoelectronic semiconductor chip a plurality of semiconductor structures, each with an active region.
- the active areas in particular each comprise at least one pn junction and / or at least one quantum well structure in the form of a single quantum well, or SQW for short, or in the form of a multi-quantum well structure or MQW for short.
- the semiconductor structures preferably each comprise two semiconductor sections, between which the active area is arranged. The semiconductor sections on
- the active area of the semiconductor structures is, for example, three-dimensionally shaped. An interface between the active area and an adjacent one
- the semiconductor section is not continuously flat, but instead is curved or has edges, for example.
- the interface has, for example, the shape of the outer surface of a cone or a truncated cone or a pyramid or a truncated pyramid.
- the semiconductor material of the semiconductor structures can be based on the same III-V compound semiconductor material as the semiconductor layer sequence. Just the exact one
- the stoichiometric composition of the semiconductor structures then differs, for example, from that of the
- the active areas for emission and / or absorption are set up in the visible spectral range or in the near UV range or in the near infrared range.
- the active areas for the emission and / or absorption of electromagnetic radiation are set up in a range between and including 350 nm and 850 nm.
- the active regions of different semiconductor structures are not connected. This means that the active areas of different semiconductor structures are separated from one another
- Semiconductor structures are not together, but are separated and spaced from one another.
- Semiconductor structures can, for example, in a plane parallel to a main extension plane of the
- Semiconductor layer sequence can be arranged side by side.
- the semiconductor structures are arranged regularly or irregularly along this plane.
- Semiconductor structures each formed as a nanorod or as a microrod, in English nanorod or micro rod.
- Semiconductor structures are therefore elongated structures with an aspect ratio of at least 1 or at least 1.3 or at least 2, the aspect ratio being defined as a ratio of length to diameter.
- the aspect ratio is, for example, at most 10 or at most 5.
- Nanorods have a diameter of, for example, at least 10 nm and at most 1 ⁇ m.
- microrods have one
- the nanorods or microsticks can each have the shape of a square or hexagonal, for example
- the nanorods or microrods can in particular be formed in a core-shell structure. That is, a
- Semiconductor section forms a core which is at least partially encased by the active region.
- the active area is in turn encased by a further semiconductor section in the form of a layer.
- Semiconductor structures are, for example, in all lateral directions, parallel to the main extension plane of the
- the active areas are each for the emission and / or absorption of
- the semiconductor structures are each designed as nanorods or as microrods.
- the semiconductor structures are embedded in the semiconductor layer sequence.
- the present invention is based in particular on the idea of burying active or passive semiconductor structures in a semiconductor layer sequence.
- the semiconductor structures can be, for example, passive structures
- the intensity or the color location of the semiconductor chip can be set by adjusting the density of the semiconductor structures.
- the semiconductor structures can be overgrown with the semiconductor layer sequence. As the semiconductor layer sequence grows, the semiconductor structures have a positive effect with regard to the reduction of lattice defects.
- the semiconductor structures can, for example, act like a PSS (Patterned Sapphire Substrate). By adjusting the diameter of the semiconductor structures, the wavelength of the or emitted by the semiconductor structures
- semiconductor structures conversion elements In this case, the semiconductor structures are passive elements.
- the active layer of the semiconductor layer sequence contains in particular at least one pn junction and / or at least one quantum well structure in the form of a single quantum well, SQW for short, or in the form of a multi-quantum well structure, MQW for short.
- the active layer can Intended use generate or absorb electromagnetic radiation in the blue or green or red spectral range or in the UV range or in the IR range.
- the active layer of the semiconductor layer sequence can
- a lateral extension of the active layer is, for example, at least 95% of the lateral extension of the semiconductor layer sequence.
- Conversion elements set up to convert the primary radiation into a secondary radiation or a
- the semiconductor structures absorb the primary radiation.
- Semiconductor structures arranged between the active layer and a growth substrate of the semiconductor layer sequence. On the growth substrate is the semiconductor layer sequence
- the growth substrate is part of the semiconductor chip.
- the growth substrate can be sapphire.
- the semiconductor chip is then a so-called sapphire chip or a flip chip.
- the semiconductor chip is free of a growth substrate of the semiconductor layer sequence. After the semiconductor layer sequence has been grown on a growth substrate, the growth substrate has therefore been detached.
- the semiconductor chip is in particular a thin film chip.
- the carrier stabilizes the semiconductor layer sequence in particular.
- the carrier can be electrically conductive.
- the carrier can be a silicon carrier.
- the active layer is arranged between the carrier and the semiconductor structures.
- the semiconductor structures each taper along a longitudinal axis of the semiconductor structure. For example, they taper
- Semiconductor structures all along the same direction. For example, all semiconductor structures taper towards or away from the active layer.
- Semiconductor chip a plurality of individually and independently controllable pixels.
- a driven pixel emits or absorbs electromagnetic radiation.
- the semiconductor chip is then a pixelated semiconductor chip.
- different semiconductor structures are assigned to different pixels.
- the surveys are, in particular, bulges or protuberances of the active layer that are perpendicular to one
- the elevations in the active layer can, for example, by growing the semiconductor layer sequence on the
- V-pits Semiconductor structures may be conditional.
- the surveys are formed by so-called V-pits.
- the V-pits can then each be assigned to a semiconductor structure.
- the active layer Through the elevations in the active layer, the
- Luminance can be increased.
- the mirror layer is in particular a Bragg mirror made of several elements
- the mirror layer can have grown epitaxially.
- the mirror layer comprises a layer of n-doped AlInN and a layer of GaN.
- the mirror layer is preferably a mirror for the primary radiation emitted by the active layer.
- Layers of the mirror layer fulfill, for example, the 1/4 condition with regard to the primary radiation.
- the primary radiation can advantageously be made to linger longer in the mirror layer, which in turn
- At least some semiconductor structures are arranged laterally next to the active layer.
- these semiconductor structures are arranged in the same plane as the active layer.
- the semiconductor structures laterally next to the active layer serve in particular to convert the laterally emitted ones
- the active layer is the semiconductor layer sequence
- semiconductor structures being arranged in the area between two pixels in a common plane with the active layer.
- Further semiconductor structures can be arranged above or below the active layer in a different plane than the active layer.
- the method for producing an optoelectronic semiconductor chip comprises a step A) in which a growth substrate with a
- step B semiconductor structures are grown, each with an active region on the growth side, in particular grown epitaxially.
- Semiconductor structure a nanorod or a microrod.
- the active areas of the semiconductor structures are each for the emission and / or absorption of electromagnetic radiation
- Steps B) and C) are preferably alternating
- Semiconductor layer sequence is grown, then the semiconductor structures are grown, and then another part of the semiconductor layer sequence is grown.
- the semiconductor layer sequence is grown on the semiconductor structures
- Semiconductor structures prefer a growth of
- the semiconductor structures cause the semiconductor layer sequence to grow together laterally
- Embodiment of an optoelectronic semiconductor chip Embodiment of an optoelectronic semiconductor chip.
- FIG. 1A to IC show a first exemplary embodiment of the optoelectronic semiconductor chip 100 in
- the semiconductor chip 100 comprises a growth substrate 3, for example a sapphire substrate.
- An auxiliary layer 13 has grown on the growth substrate 3.
- the auxiliary layer 13 is a semiconductor layer and is based, for example, on GaN.
- the semiconductor structures 21, 22 are based, for example, on a nitride compound semiconductor material.
- the semiconductor structures 21, 22 are with a
- the semiconductor layer sequence 1 which is based on AlInGaN, for example, overgrow.
- the semiconductor layer sequence 1 comprises a first semiconductor layer 11.
- the first semiconductor layer 11 is n-doped, for example.
- the first semiconductor layer 11 is an active layer 10 in the form of a
- the active layer 10 is in turn a second semiconductor layer 12 which is used for
- Example is p-doped, subordinate.
- 1A to IC also show a first contact element 41 for contacting the first semiconductor layer 11 and a second contact element 42 for contacting the second
- Both contact elements 41, 42 are arranged on a side of the semiconductor layer sequence 1 facing away from the growth substrate 3. The first
- the contact elements 41, 42 can with contact wires 43 of one
- the semiconductor chip 100 of FIGS. 1A to IC is in particular a so-called sapphire chip.
- semiconductor structure 21 shown. It can be seen that the first semiconductor structure 21 has a first semiconductor section
- Semiconductor section 211 is encased with an active region 210.
- the active region 210 serves for the absorption and / or emission of electromagnetic radiation.
- the active region 210 is from a second semiconductor section
- FIG. 1 also shows the remains of a mask 25 that was used to grow the first semiconductor structures 21.
- FIG. 100 A second exemplary embodiment of the optoelectronic semiconductor chip 100 is shown in FIG. Again, this is a sapphire chip. Unlike in FIGS. 1A to IC, they are used as conversion elements
- a mirror 7 for example a Bragg mirror, is arranged. Such a mirror 7 can also be provided in the exemplary embodiment in FIGS. 1A to IC.
- FIGS. 2A to 21 show different positions in a first exemplary embodiment of the method
- FIG. 2A A growth substrate 3 with an auxiliary layer 13 is initially provided in FIG. 2A.
- the auxiliary layer 13 is a semiconductor layer and has grown epitaxially on a growth side 31 of the growth substrate 3.
- a first semiconductor structure 21 in the form of a nanorod or microrod is grown on the growth side 31 of the growth substrate 3.
- a mask 25 was first applied to the growth side 31.
- the mask 25 can be, for example, with an electrically insulating
- the mask 25 was then patterned by making holes in the mask 25.
- the size of the holes in the mask 25 defines the diameter of the semiconductor structures that arise later.
- the first semiconductor structures 21 were then grown within the holes. For example, these are green conversion elements.
- Second semiconductor structures 22 have grown again in the form of nanorods or microrods within the additional holes.
- the diameters are chosen differently than for the first semiconductor structures 21. These are, for example, red conversion elements.
- Semiconductor structures 21 are coated with a passivation 26, for example SiO 2 or SiN. Unlike in Figure 2B and
- FIG. 2C shows the position of FIG. 2C again in a perspective view and a cross-sectional view.
- FIGS. 2E to 2G show how the
- the first semiconductor layer 11 can for example comprise or consist of a mirror layer, in particular a Bragg mirror.
- FIGS. 2H and 21 show how the
- FIGS. 3A and 3B show a second exemplary embodiment of the optoelectronic semiconductor chip 100.
- This semiconductor chip 100 is one of these
- Semiconductor layer sequence 1 and the contact elements 41, 42 is a contact layer 6 for contacting the second
- the contact layer 6 is with a second electrode 420
- the first semiconductor layer 11 is connected to a first electrode 410 via vias 411 which extend through the second semiconductor layer 12 and the active layer 10. Both electrodes 410, 420 are on the same side of the Semiconductor layer sequence 1 arranged.
- An insulation layer 8 is arranged on the electrodes 410, 420. The electrodes 410, 420 are electrically conductively connected to the contact elements 41, 42 through the insulation layer 8.
- FIGS. 4A to 4F show various positions of an exemplary embodiment for producing the semiconductor chip 100 in FIGS. 3A and 3B.
- the method is carried out as explained in connection with FIGS. 2A to 2G.
- the position shown in FIG. 4A follows the position in FIG. 2G.
- FIG. 4A shows one of the growth substrates 3
- Openings are introduced into the semiconductor layer sequence 1, which extend through the second semiconductor layer 12 and the active layer 10 into the first semiconductor layer 11 and open into the first semiconductor layer 11.
- a contact layer 6, for example made of silver (FIG. 4B) and a mirror 7, for example made of metal (FIG. 4C) are then applied to the second semiconductor layer 12.
- the openings are filled with an electrically conductive material, such as a metal (FIG. 4C). This creates through-contacts 411 for contacting the first
- Electrodes 410, 420 are applied to the mirror 7 (FIG. 4D).
- the first electrode 410 is electrically conductive with the plated-through holes 411
- the second electrode 420 is electrically conductive via holes in the mirror 7 with the contact layer 6
- an insulation layer 8 is applied to the electrodes 410, 420.
- the insulation layer 8 comprises, for example, silicon oxide or silicon nitride.
- FIG. 4F there are still contact elements 41, 42 on one the growth substrate 3 facing away from the
- Insulation layer 8 applied.
- FIGS. 5A and 5B show a third exemplary embodiment of the optoelectronic semiconductor chip 100.
- the growth substrate is now detached. There is an additional for that
- Carrier 5 for example a silicon carrier, on a side of the second side facing away from active layer 10
- Semiconductor layer 12 and the carrier 5 is also a
- Mirror 7 is provided, which also serves as a second electrode 420 for contacting the second semiconductor layer 12.
- a first electrode 410 is on a side of the second electrode 420 facing away from the semiconductor layer sequence 1
- the two electrodes 410, 420 are separated from one another by an insulation layer 8 and are electrically insulated.
- the first electrode 410 is over
- Vias 411 which are characterized by the
- Insulation layer 8, the second electrode 24, the second semiconductor layer 12 and the active layer 10 extend into the first semiconductor layer 11, with the first semiconductor layer 11 electrically connected.
- the carrier 5 is applied to the first electrode 410.
- a first contact element 41 is applied to a side of the carrier 5 facing away from the semiconductor layer sequence 1.
- the carrier 5 is preferably electrically conductive.
- Recess introduced which extends from a side of the semiconductor layer sequence 1 facing away from the carrier 5 to the second electrode 420.
- a second contact element 42 for making electrical contact second electrode 420 is provided in the recess.
- the second contact element 42 can from a side facing away from the carrier 5
- Semiconductor layer sequence 1 forth can be electrically contacted with a contact wire 43 (FIG. 5B).
- FIGS. 6A to 6B show different positions in one exemplary embodiment for producing the
- Semiconductor layer sequence 1 is introduced into the semiconductor layer sequence 1 from a side facing away from the growth substrate 3.
- a mirror 7, which simultaneously forms a second electrode 420, is on the second
- an insulation layer 8 is applied to the mirror 7 (FIG. 6B).
- a first electrode 410 is applied to the insulation layer 8 (FIG. 6C).
- the openings are filled with an electrically conductive material that is electrically conductively connected to the first electrode 410.
- Vias 411 in the semiconductor layer sequence 1 were formed.
- a carrier 5 is applied to the first electrode 410 and is electrically conductively connected to the first electrode 410.
- the growth substrate 3 is then removed (FIG. 6E).
- the semiconductor structures can be core-shell rods, for example cylindrical, pyramidal or obelisk-shaped
- Semiconductor structures can each be in the form of a
- Figure 8A shows a first position in another
- Embodiment of the method for producing an optoelectronic semiconductor chip A first part of a semiconductor layer sequence with an active layer 10 has grown on a growth substrate 3.
- FIG. 8B shows a second position of the method in which the semiconductor layer sequence is structured together with the active layer 10.
- the active layer 10 is removed in some areas. this will
- the semiconductor structures 21, 22 are
- Semiconductor structures 21, 22 are grown both in the areas in which the active 10 has been removed and in the other areas. In the areas in which the active layer 10 has been removed, the
- FIG. 8D shows a fourth position of the method in which the semiconductor structures 21, 22 are overgrown with further semiconductor material and the
- FIG. 8D simultaneously shows an exemplary embodiment of a finished optoelectronic semiconductor chip 100.
- the semiconductor chip 100 in FIG. 8D comprises a segmented active layer 10.
- Each segment of the active layer 10 represents a pixel, for example.
- Primary radiation is generated by the over the segments
- the semiconductor structures 21, 22 laterally next to the segments of the active layer 10 convert the laterally emitted
- FIG. 1 A further exemplary embodiment of an optoelectronic semiconductor chip 100 is shown in FIG. The
- Semiconductor chip 100 comprises only a single, coherent and uninterrupted active layer 10. However, this does not extend to the lateral limits of the
- semiconductor structures 21, 22 that convert laterally emitted primary radiation.
- semiconductor structures 21, 22 that convert laterally emitted primary radiation.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018122684.5A DE102018122684A1 (de) | 2018-09-17 | 2018-09-17 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
PCT/EP2019/074685 WO2020058180A1 (de) | 2018-09-17 | 2019-09-16 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3853913A1 true EP3853913A1 (de) | 2021-07-28 |
Family
ID=67989002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19769789.9A Withdrawn EP3853913A1 (de) | 2018-09-17 | 2019-09-16 | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220037558A1 (de) |
EP (1) | EP3853913A1 (de) |
DE (1) | DE102018122684A1 (de) |
WO (1) | WO2020058180A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021129843A1 (de) * | 2021-11-16 | 2023-05-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer vielzahl strahlungsemittierender halbleiterchips und strahlungsemittierender halbleiterchip |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100664986B1 (ko) * | 2004-10-29 | 2007-01-09 | 삼성전기주식회사 | 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법 |
US8106289B2 (en) * | 2007-12-31 | 2012-01-31 | Banpil Photonics, Inc. | Hybrid photovoltaic device |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
KR20110101555A (ko) * | 2010-03-09 | 2011-09-16 | 삼성엘이디 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US8835903B2 (en) * | 2010-07-29 | 2014-09-16 | National Tsing Hua University | Light-emitting diode display and method of producing the same |
KR101710159B1 (ko) * | 2010-09-14 | 2017-03-08 | 삼성전자주식회사 | Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법 |
DE102010046792A1 (de) * | 2010-09-28 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
EP2506321B1 (de) * | 2011-03-28 | 2019-01-23 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
KR102131599B1 (ko) * | 2013-12-16 | 2020-07-09 | 삼성디스플레이 주식회사 | 발광 다이오드 및 그 제조 방법 |
EP3102647B1 (de) * | 2014-02-04 | 2020-11-04 | Lumileds Holding B.V. | Oxo- und hydroxobasierte anorganische verbundliganden für quantenpunkte |
CN106558597B (zh) * | 2015-09-30 | 2020-03-06 | 三星电子株式会社 | 发光器件封装件 |
DE102016103346A1 (de) * | 2016-02-25 | 2017-08-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und strahlungsemittierender Halbleiterchip |
-
2018
- 2018-09-17 DE DE102018122684.5A patent/DE102018122684A1/de not_active Withdrawn
-
2019
- 2019-09-16 EP EP19769789.9A patent/EP3853913A1/de not_active Withdrawn
- 2019-09-16 WO PCT/EP2019/074685 patent/WO2020058180A1/de unknown
- 2019-09-16 US US17/276,492 patent/US20220037558A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20220037558A1 (en) | 2022-02-03 |
DE102018122684A1 (de) | 2020-03-19 |
WO2020058180A1 (de) | 2020-03-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102012109460B4 (de) | Verfahren zur Herstellung eines Leuchtdioden-Displays und Leuchtdioden-Display | |
EP2638575B1 (de) | Optoelektronischer halbleiterchip und verfahren zu dessen herstellung | |
DE102009023849B4 (de) | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip | |
DE112017006428T5 (de) | Lichtemittierende Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
WO2012052257A2 (de) | Optoelektronischer halbleiterchip und verfahren zu dessen herstellung | |
DE112017003307T5 (de) | Verfahren zur Herstellung einer optischen Halbleitervorrichtung und optische Halbleitervorrichtung | |
WO2018234154A1 (de) | Optoelektronisches halbleiterbauelement | |
WO2014056762A2 (de) | Verfahren zur herstellung eines optoelektronischen halbleiterbauteils und optoelektronisches halbleiterbauteil | |
DE112015004200T5 (de) | Vertikale led-chipstruktur mit spezieller vergröbernder morphologie und herstellungsverfahren dafür | |
WO2012052415A1 (de) | Optoelektronisches bauelement und verfahren zu dessen herstellung | |
DE112018001450B4 (de) | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung | |
DE102013200509A1 (de) | Optoelektronischer Halbleiterchip | |
WO2020058180A1 (de) | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips | |
WO2017129446A1 (de) | Konversionselement und strahlungsemittierendes halbleiterbauelement mit einem solchen konversionselement | |
WO2020035498A1 (de) | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips | |
WO2019115344A1 (de) | Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils | |
WO2020239749A1 (de) | Optoelektronisches halbleiterbauelement mit verbindungsbereichen und verfahren zur herstellung des optoelektronischen halbleiterbauelements | |
WO2020127435A1 (de) | Optoelektronisches halbleiterbauelement und dessen herstellungsverfahren | |
WO2020165164A1 (de) | Optoelektronisches bauelement | |
WO2017140615A1 (de) | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements | |
WO2017021301A1 (de) | Verfahren zur herstellung eines nitrid-halbleiterbauelements und nitrid-halbleiterbauelement | |
WO2020064947A1 (de) | Optoelektronisches bauelement mit dielektrischer spiegelschicht und dessen herstellungsverfahren | |
DE102019108216A1 (de) | Optoelektronisches Halbleiterbauelement mit dielektrischer Schicht und transparenter leitfähiger Schicht und Verfahren zur Herstellung des optoelektronischen Halbleiterbauelements | |
WO2023105036A1 (de) | Optoelektronisches bauelement, optoelektronische vorrichtung und verfahren zur herstellung eines bauelements | |
DE112022003001T5 (de) | Optoelektronisches bauelement, bauelementeinheit und verfahren zu deren herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20210316 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20220422 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20231026 |