EP3826803A4 - Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau - Google Patents

Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau Download PDF

Info

Publication number
EP3826803A4
EP3826803A4 EP19840951.8A EP19840951A EP3826803A4 EP 3826803 A4 EP3826803 A4 EP 3826803A4 EP 19840951 A EP19840951 A EP 19840951A EP 3826803 A4 EP3826803 A4 EP 3826803A4
Authority
EP
European Patent Office
Prior art keywords
incident radiation
crack propagation
radiation induced
subsurface damage
controlled crack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19840951.8A
Other languages
German (de)
English (en)
Other versions
EP3826803A1 (fr
Inventor
Andrei Teodor IANCU
Charles William RUDY
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Halo Ind Inc
Halo Industries Inc
Original Assignee
Halo Ind Inc
Halo Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Halo Ind Inc, Halo Industries Inc filed Critical Halo Ind Inc
Publication of EP3826803A1 publication Critical patent/EP3826803A1/fr
Publication of EP3826803A4 publication Critical patent/EP3826803A4/fr
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP19840951.8A 2018-07-26 2019-07-26 Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau Pending EP3826803A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862703642P 2018-07-26 2018-07-26
PCT/US2019/043774 WO2020023929A1 (fr) 2018-07-26 2019-07-26 Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau

Publications (2)

Publication Number Publication Date
EP3826803A1 EP3826803A1 (fr) 2021-06-02
EP3826803A4 true EP3826803A4 (fr) 2022-04-20

Family

ID=69180718

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19840951.8A Pending EP3826803A4 (fr) 2018-07-26 2019-07-26 Dommage souterrain induit par un rayonnement incident pour propagation de fissure contrôlée dans le clivage de matériau

Country Status (6)

Country Link
EP (1) EP3826803A4 (fr)
JP (1) JP7174850B2 (fr)
KR (1) KR102487262B1 (fr)
CN (1) CN112601633A (fr)
TW (1) TWI735924B (fr)
WO (1) WO2020023929A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022099659A (ja) * 2020-12-23 2022-07-05 Ｄｇｓｈａｐｅ株式会社 歯冠補綴物の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1570941A2 (fr) * 2004-02-19 2005-09-07 Canon Kabushiki Kaisha Méthode de séparation par laser d'un substrat en silicium et composant semiconducteur obtenu par ce procédé
US20160303764A1 (en) * 2015-04-15 2016-10-20 Halo Industries, Inc. Capacitive Clamping Process for Cleaving Work Pieces Using Crack Propagation

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0839500A (ja) * 1994-07-29 1996-02-13 Hitachi Ltd 基板製造法
JP2002075914A (ja) * 2000-08-29 2002-03-15 Sony Corp 材料基板のへき開方法及びへき開装置
JP3626442B2 (ja) * 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
KR100375173B1 (ko) * 2000-10-20 2003-03-08 주식회사 실트론 단결정 잉곳의 제조 방법 및 이 단결정 잉곳을 이용한웨이퍼 제조방법
JP4728534B2 (ja) * 2001-09-11 2011-07-20 テイコクテーピングシステム株式会社 シリコンウエハ保護フィルムのトリミング方法及びトリミング装置
JP3887394B2 (ja) * 2004-10-08 2007-02-28 芝浦メカトロニクス株式会社 脆性材料の割断加工システム及びその方法
US7871899B2 (en) * 2006-01-11 2011-01-18 Amkor Technology, Inc. Methods of forming back side layers for thinned wafers
US8835802B2 (en) * 2006-01-24 2014-09-16 Stephen C. Baer Cleaving wafers from silicon crystals
KR101223470B1 (ko) * 2008-04-14 2013-01-17 미쓰보시 다이야몬도 고교 가부시키가이샤 취성 재료 기판의 가공 방법
US8623137B1 (en) * 2008-05-07 2014-01-07 Silicon Genesis Corporation Method and device for slicing a shaped silicon ingot using layer transfer
KR20110059366A (ko) * 2009-11-27 2011-06-02 네오세미테크 주식회사 분리 영역이 형성된 단결정 반도체 기판과 이를 이용한 태양전지 및 그 제조방법
JP2012109341A (ja) * 2010-11-16 2012-06-07 Shibuya Kogyo Co Ltd 半導体材料の切断方法と切断装置
AU2014311321A1 (en) * 2013-08-29 2016-03-10 The Board Of Trustees Of The Leland Stanford Junior University Method of controlled crack propagation for material cleavage using electromagnetic forces
JP6506520B2 (ja) * 2014-09-16 2019-04-24 株式会社ディスコ ＳｉＣのスライス方法
CN105436710B (zh) * 2015-12-30 2019-03-05 大族激光科技产业集团股份有限公司 一种硅晶圆的激光剥离方法
JP6128666B2 (ja) * 2016-03-02 2017-05-17 株式会社東京精密 半導体基板の割断方法及び割断装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1570941A2 (fr) * 2004-02-19 2005-09-07 Canon Kabushiki Kaisha Méthode de séparation par laser d'un substrat en silicium et composant semiconducteur obtenu par ce procédé
US20160303764A1 (en) * 2015-04-15 2016-10-20 Halo Industries, Inc. Capacitive Clamping Process for Cleaving Work Pieces Using Crack Propagation

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020023929A1 *

Also Published As

Publication number Publication date
JP7174850B2 (ja) 2022-11-17
KR102487262B1 (ko) 2023-01-10
JP2021531982A (ja) 2021-11-25
KR20210038657A (ko) 2021-04-07
TWI735924B (zh) 2021-08-11
TW202019601A (zh) 2020-06-01
EP3826803A1 (fr) 2021-06-02
WO2020023929A1 (fr) 2020-01-30
CN112601633A (zh) 2021-04-02

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