EP3743857A4 - Schaltungen neuronaler netze mit nichtflüchtigen synapsenarrays - Google Patents
Schaltungen neuronaler netze mit nichtflüchtigen synapsenarrays Download PDFInfo
- Publication number
- EP3743857A4 EP3743857A4 EP19744289.0A EP19744289A EP3743857A4 EP 3743857 A4 EP3743857 A4 EP 3743857A4 EP 19744289 A EP19744289 A EP 19744289A EP 3743857 A4 EP3743857 A4 EP 3743857A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- neural network
- network circuits
- synapse arrays
- volatile synapse
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/048—Activation functions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0097—Erasing, e.g. resetting, circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- General Health & Medical Sciences (AREA)
- Biophysics (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- Software Systems (AREA)
- Data Mining & Analysis (AREA)
- Computational Linguistics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Computer Hardware Design (AREA)
- Neurology (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862620947P | 2018-01-23 | 2018-01-23 | |
US201862655074P | 2018-04-09 | 2018-04-09 | |
US16/196,617 US11361215B2 (en) | 2017-11-29 | 2018-11-20 | Neural network circuits having non-volatile synapse arrays |
US16/252,640 US11361216B2 (en) | 2017-11-29 | 2019-01-20 | Neural network circuits having non-volatile synapse arrays |
PCT/US2019/014442 WO2019147522A2 (en) | 2018-01-23 | 2019-01-22 | Neural network circuits having non-volatile synapse arrays |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3743857A2 EP3743857A2 (de) | 2020-12-02 |
EP3743857A4 true EP3743857A4 (de) | 2021-12-29 |
Family
ID=67395562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19744289.0A Pending EP3743857A4 (de) | 2018-01-23 | 2019-01-22 | Schaltungen neuronaler netze mit nichtflüchtigen synapsenarrays |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3743857A4 (de) |
KR (1) | KR102567160B1 (de) |
TW (1) | TWI751403B (de) |
WO (1) | WO2019147522A2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11694751B2 (en) | 2019-11-30 | 2023-07-04 | Semibrain Inc. | Logic compatible flash memory programming with a pulse width control scheme |
US11636322B2 (en) * | 2020-01-03 | 2023-04-25 | Silicon Storage Technology, Inc. | Precise data tuning method and apparatus for analog neural memory in an artificial neural network |
US11475946B2 (en) * | 2020-01-16 | 2022-10-18 | International Business Machines Corporation | Synapse weight update compensation |
US11663455B2 (en) * | 2020-02-12 | 2023-05-30 | Ememory Technology Inc. | Resistive random-access memory cell and associated cell array structure |
CN113655993A (zh) * | 2021-03-17 | 2021-11-16 | 神盾股份有限公司 | 乘积和运算装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0644597A1 (de) * | 1992-06-03 | 1995-03-22 | SHIBATA, Tadashi | Halbleitervorrichtung. |
US20030183871A1 (en) * | 2002-03-22 | 2003-10-02 | Dugger Jeffery Don | Floating-gate analog circuit |
US7167392B1 (en) * | 2005-07-15 | 2007-01-23 | National Semiconductor Corporation | Non-volatile memory cell with improved programming technique |
US20160048755A1 (en) * | 2014-08-14 | 2016-02-18 | The Regents Of The University Of Michigan | Floating-gate transistor array for performing weighted sum computation |
WO2017078886A1 (en) * | 2015-11-05 | 2017-05-11 | Qualcomm Incorporated | Generic mapping for tracking target object in video sequence |
EP3718055A1 (de) * | 2017-11-29 | 2020-10-07 | Anaflash Inc. | Schaltungen neuronaler netze mit nichtflüchtigen synapsenarrays |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4956564A (en) * | 1989-07-13 | 1990-09-11 | Intel Corporation | Adaptive synapse cell providing both excitatory and inhibitory connections in an associative network |
US5353382A (en) * | 1990-10-15 | 1994-10-04 | California Institute Of Technology | Programmable synapse for neural network applications |
US5336937A (en) * | 1992-08-28 | 1994-08-09 | State University Of New York | Programmable analog synapse and neural networks incorporating same |
US10478115B2 (en) * | 2004-10-04 | 2019-11-19 | Spirofriend Technology Aps | Handheld home monitoring sensors network device |
US7656710B1 (en) * | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
KR20130133111A (ko) * | 2012-05-28 | 2013-12-06 | 송승환 | 순수 로직 트랜지스터로 구성된 플래시 메모리 |
KR101752583B1 (ko) * | 2013-03-14 | 2017-07-11 | 마이크론 테크놀로지, 인크. | 트레이닝, 데이터 조직, 및/또는 섀도잉을 포함하는 메모리 시스템들 및 방법들 |
FR3016724B1 (fr) * | 2014-01-22 | 2016-02-05 | Commissariat Energie Atomique | Memoire non volatile multiport |
US9934831B2 (en) * | 2014-04-07 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for storing and writing multiple parameter codes for memory operating parameters |
US9715916B1 (en) * | 2016-03-24 | 2017-07-25 | Intel Corporation | Supply-switched dual cell memory bitcell |
KR20170117863A (ko) * | 2016-04-14 | 2017-10-24 | 에스케이하이닉스 주식회사 | 고정된 저항 값들을 갖는 시냅스들을 포함하는 뉴로모픽 소자 |
KR102182583B1 (ko) * | 2016-05-17 | 2020-11-24 | 실리콘 스토리지 테크놀로지 인크 | 비휘발성 메모리 어레이를 사용하는 딥러닝 신경망 분류기 |
-
2019
- 2019-01-22 KR KR1020207024195A patent/KR102567160B1/ko active IP Right Grant
- 2019-01-22 WO PCT/US2019/014442 patent/WO2019147522A2/en unknown
- 2019-01-22 EP EP19744289.0A patent/EP3743857A4/de active Pending
- 2019-01-23 TW TW108102597A patent/TWI751403B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0644597A1 (de) * | 1992-06-03 | 1995-03-22 | SHIBATA, Tadashi | Halbleitervorrichtung. |
US20030183871A1 (en) * | 2002-03-22 | 2003-10-02 | Dugger Jeffery Don | Floating-gate analog circuit |
US7167392B1 (en) * | 2005-07-15 | 2007-01-23 | National Semiconductor Corporation | Non-volatile memory cell with improved programming technique |
US20160048755A1 (en) * | 2014-08-14 | 2016-02-18 | The Regents Of The University Of Michigan | Floating-gate transistor array for performing weighted sum computation |
WO2017078886A1 (en) * | 2015-11-05 | 2017-05-11 | Qualcomm Incorporated | Generic mapping for tracking target object in video sequence |
EP3718055A1 (de) * | 2017-11-29 | 2020-10-07 | Anaflash Inc. | Schaltungen neuronaler netze mit nichtflüchtigen synapsenarrays |
Also Published As
Publication number | Publication date |
---|---|
EP3743857A2 (de) | 2020-12-02 |
WO2019147522A3 (en) | 2020-04-09 |
TWI751403B (zh) | 2022-01-01 |
KR102567160B1 (ko) | 2023-08-16 |
WO2019147522A2 (en) | 2019-08-01 |
CN111656371A (zh) | 2020-09-11 |
KR20200110701A (ko) | 2020-09-24 |
TW201937413A (zh) | 2019-09-16 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: G11C 13/00 20060101ALI20211122BHEP Ipc: G11C 11/54 20060101ALI20211122BHEP Ipc: G11C 11/56 20060101ALI20211122BHEP Ipc: G06N 3/08 20060101ALI20211122BHEP Ipc: G06N 3/063 20060101ALI20211122BHEP Ipc: G06N 3/04 20060101AFI20211122BHEP |
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