EP3704700A4 - System und verfahren zur speicherung von mehrbitdaten in einem nichtflüchtigen speicher - Google Patents

System und verfahren zur speicherung von mehrbitdaten in einem nichtflüchtigen speicher Download PDF

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Publication number
EP3704700A4
EP3704700A4 EP18872824.0A EP18872824A EP3704700A4 EP 3704700 A4 EP3704700 A4 EP 3704700A4 EP 18872824 A EP18872824 A EP 18872824A EP 3704700 A4 EP3704700 A4 EP 3704700A4
Authority
EP
European Patent Office
Prior art keywords
volatile memory
multibit data
storing multibit
storing
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP18872824.0A
Other languages
English (en)
French (fr)
Other versions
EP3704700B1 (de
EP3704700A1 (de
Inventor
Vipin TIWARI
Nhan Do
Hieu Van Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Storage Technology Inc
Original Assignee
Silicon Storage Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Storage Technology Inc filed Critical Silicon Storage Technology Inc
Publication of EP3704700A1 publication Critical patent/EP3704700A1/de
Publication of EP3704700A4 publication Critical patent/EP3704700A4/de
Application granted granted Critical
Publication of EP3704700B1 publication Critical patent/EP3704700B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
EP18872824.0A 2017-11-03 2018-10-02 System und verfahren zur speicherung von mehrbitdaten in einem nichtflüchtigen speicher Active EP3704700B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762581489P 2017-11-03 2017-11-03
US16/148,304 US10515694B2 (en) 2017-11-03 2018-10-01 System and method for storing multibit data in non-volatile memory
PCT/US2018/053930 WO2019089168A1 (en) 2017-11-03 2018-10-02 System and method for storing multibit data in non-volatile memory

Publications (3)

Publication Number Publication Date
EP3704700A1 EP3704700A1 (de) 2020-09-09
EP3704700A4 true EP3704700A4 (de) 2021-07-21
EP3704700B1 EP3704700B1 (de) 2022-07-20

Family

ID=66327523

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18872824.0A Active EP3704700B1 (de) 2017-11-03 2018-10-02 System und verfahren zur speicherung von mehrbitdaten in einem nichtflüchtigen speicher

Country Status (7)

Country Link
US (1) US10515694B2 (de)
EP (1) EP3704700B1 (de)
JP (1) JP6970826B2 (de)
KR (1) KR102199607B1 (de)
CN (1) CN111344791B (de)
TW (1) TWI682393B (de)
WO (1) WO2019089168A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100671698B1 (ko) * 2004-08-05 2007-01-18 매그나칩 반도체 유한회사 엘디아이 내 디지털 아날로그 변환기의 테스트 장치
US10991433B2 (en) * 2019-09-03 2021-04-27 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program
US11682459B2 (en) 2020-05-13 2023-06-20 Silicon Storage Technology, Inc. Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism
US12080355B2 (en) 2021-06-02 2024-09-03 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise
US11769558B2 (en) 2021-06-08 2023-09-26 Silicon Storage Technology, Inc. Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells
KR102703459B1 (ko) 2021-11-29 2024-09-06 충남대학교 산학협력단 멀티 레벨 구동이 가능한 메모리 소자

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120250400A1 (en) * 2011-03-30 2012-10-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US20140241039A1 (en) * 2013-02-28 2014-08-28 SK Hynix Inc. Electronic device and method for operating the same

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US5029130A (en) 1990-01-22 1991-07-02 Silicon Storage Technology, Inc. Single transistor non-valatile electrically alterable semiconductor memory device
JP2812202B2 (ja) * 1994-06-27 1998-10-22 ヤマハ株式会社 半導体記憶装置
KR100324594B1 (ko) 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
US7082056B2 (en) 2004-03-12 2006-07-25 Super Talent Electronics, Inc. Flash memory device and architecture with multi level cells
US7324374B2 (en) 2003-06-20 2008-01-29 Spansion Llc Memory with a core-based virtual ground and dynamic reference sensing scheme
US7315056B2 (en) 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
US7554856B2 (en) * 2006-10-06 2009-06-30 Qimonda Flash Gmbh & Co. Kg Memory cell
US20090039410A1 (en) 2007-08-06 2009-02-12 Xian Liu Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US9099202B2 (en) * 2012-11-06 2015-08-04 Sandisk Technologies Inc. 3D stacked non-volatile storage programming to conductive state
CN105027216B (zh) 2013-03-14 2017-09-22 硅存储技术公司 非易失性存储器编程算法装置和方法
US20150085571A1 (en) * 2013-09-24 2015-03-26 Sandisk Technologies Inc. Updating read voltages
US9543041B2 (en) * 2014-08-29 2017-01-10 Everspin Technologies, Inc. Configuration and testing for magnetoresistive memory to ensure long term continuous operation
US9905302B2 (en) * 2014-11-20 2018-02-27 Western Digital Technologies, Inc. Read level grouping algorithms for increased flash performance
US9484094B2 (en) 2015-01-21 2016-11-01 Ememory Technology Inc. Control method of resistive random-access memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120250400A1 (en) * 2011-03-30 2012-10-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US20140241039A1 (en) * 2013-02-28 2014-08-28 SK Hynix Inc. Electronic device and method for operating the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2019089168A1 *

Also Published As

Publication number Publication date
WO2019089168A1 (en) 2019-05-09
KR102199607B1 (ko) 2021-01-08
CN111344791A (zh) 2020-06-26
TW201931370A (zh) 2019-08-01
JP6970826B2 (ja) 2021-11-24
EP3704700B1 (de) 2022-07-20
KR20200043501A (ko) 2020-04-27
CN111344791B (zh) 2021-06-25
JP2021501956A (ja) 2021-01-21
EP3704700A1 (de) 2020-09-09
TWI682393B (zh) 2020-01-11
US20190139602A1 (en) 2019-05-09
US10515694B2 (en) 2019-12-24

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