EP3682474B1 - Arrangement of several adapter elements and method for producing such a composite - Google Patents

Arrangement of several adapter elements and method for producing such a composite Download PDF

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Publication number
EP3682474B1
EP3682474B1 EP18769131.6A EP18769131A EP3682474B1 EP 3682474 B1 EP3682474 B1 EP 3682474B1 EP 18769131 A EP18769131 A EP 18769131A EP 3682474 B1 EP3682474 B1 EP 3682474B1
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EP
European Patent Office
Prior art keywords
metal layer
composite
adapter
adapter elements
predetermined breaking
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EP18769131.6A
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German (de)
French (fr)
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EP3682474A1 (en
Inventor
Johannes Wiesend
Heiko Schweiger
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Rogers Germany GmbH
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Rogers Germany GmbH
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02355Fixing laser chips on mounts
    • H01S5/0237Fixing laser chips on mounts by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02492CuW heat spreaders

Definitions

  • the present invention relates to a composite made up of a plurality of adapter elements and a method for producing such a composite.
  • heat sinks that are connected to the laser diode via an adapter element.
  • the adapter elements arranged between the laser diode and the heat sink are usually used to adapt different expansion coefficients of the materials from which the heat sinks and the electrical components such as OP amplifiers, coils or laser diodes are made.
  • the background to this is that otherwise the different expansion coefficients during operation can lead to thermomechanically induced stresses in the connection area. The consequence of these thermomechanical stresses can be deformation of the laser diode, which in turn can lead to a change in the emission wavelength of the laser diode, or even crack formation.
  • the laser diode is therefore joined to the heat sink via the adapter element, in particular soldered using AuSn solder material.
  • the adapter elements must be coated with the AuSn solder material, typically using a sputtering process.
  • a composite substrate with a carrier which consists of a metallic material, for example copper and / or aluminum, on at least one surface side.
  • a metal-ceramic substrate is provided with at least one metallization structured by etching on at least one surface side of a plate-shaped ceramic material, which consists of a base substrate made of an aluminum nitride or silicon nitride ceramic and to which the metallization is applied by active soldering prior to structuring.
  • the present invention aims to provide adapter elements that can withstand high temperature loads during operation, allow optimal adaptation of the expansion coefficients in the system of components such as laser diode, adapter element and heat sink, and can be produced comparatively easily and quickly.
  • a comparatively thick first and / or second metal layer is provided according to the invention, the thickness of which advantageously supports heat spreading during heat transport through the adapter element.
  • This spread of heat in turn leads to the most homogeneous possible heat distribution in an interface area between the heat sink and the adapter element.
  • This can advantageously counteract thermomechanical stresses that are caused by different thermal expansion coefficients of the individual components.
  • An adapter element can be provided with which a stress-reduced interface between the adapter element and the heat sink can be implemented in the assembled state, which advantageously causes cracks to form in the system of z.
  • B. the wavelength changing deformation of the laser diode can be suppressed.
  • the thickness of the first metal layer and / or the second metal layer according to the claims can advantageously be achieved simply by means of a DCB method or an active soldering method realize quickly.
  • the use of an intermediate layer comprising the ceramic allows the coefficients of thermal expansion to be adapted, as a result of which the development of thermomechanical stresses during operation can be further counteracted.
  • the first metal layer and / or the second metal layer preferably comprises copper, in particular with a degree of purity of 99.98% or higher.
  • it is a ceramic comprising AlN, in particular with a thermal conductivity of more than 150 W / mK, preferably more than 175 W / mK and particularly preferably more than 225 W / mK.
  • the intermediate layer is thinner than 400 ⁇ m, preferably thinner than 200 ⁇ m and particularly preferably thinner than 100 ⁇ m, in order to adapt the expansion coefficients.
  • the intermediate layer has a secondary thickness that is designed for the most optimal possible adaptation of the expansion coefficients. This further supports the suppression of thermomechanical stresses.
  • a ratio between a total thickness of a primary layer thickness of the first metal layer and a primary layer thickness of the second metal layer to the secondary layer thickness of the intermediate layer preferably has a value between 0.7 and 2, preferably between 0.8 and 1.5 and particularly preferably between 0.95 and 1 , 2 at.
  • the secondary layer preferably assumes a thickness between 0.05 mm and 0.5 mm, preferably between 0.1 mm and 0.4 mm and particularly preferably between 0.2 and 0.38 mm.
  • the primary layer thickness of the individual first metal layer or the second metal layer is between 0.01 mm and 0.15 mm, preferably between 0.02 and 0.13 mm and particularly preferably between 0.025 and 0.11 mm conceivable.
  • a ratio of the total primary layer thickness of the first and second metal layer to the secondary layer thickness of the intermediate layer assumes a value between 0.2 and 0.8, preferably between 0.25 and 0.65 and particularly preferably between 0.3 and 0.55. It is preferably provided that the adapter element is formed to an extent of at least 20% from the first metal layer and the second metal layer.
  • adapter elements are provided in a composite, the adapter elements being separable from the carrier by a predetermined breaking point.
  • the individual adapter elements do not have to be transported individually or prepared for the connection of the laser diodes.
  • the multiple adapter elements can be coated together, which advantageously simplifies the manufacture of the individual adapter elements.
  • the adapter elements are preferably arranged next to one another on a common carrier and the adjacent adapter elements are separated from one another by corresponding predetermined breaking points.
  • the adapter element or the adapter elements have an electrically conductive contact, in particular with a carrier of the assembly.
  • the connection via an electrical contact proves to be particularly advantageous because the adapter element can be kept at a desired potential for a sputtering process by means of the electrical contact.
  • the integration of the electrical contact advantageously makes it possible to dispense with individual contacting when the adapter element is required to be coated, in particular with a solder material. This further simplifies the connection of the laser diode to the heat sink.
  • the first metal layer and / or the second metal layer has a thickness between 75 ⁇ m and 120 ⁇ m.
  • the electrically conductive contact is designed in such a way that it tears off when the predetermined breaking point is broken.
  • the electrically conductive contact is made so thin that it tears off when a force required for breaking off the adapter element along the predetermined breaking point is applied.
  • the electrically conductive contact is perforated or has a local material thinning. The corresponding configuration of the electrically conductive contact can advantageously dispense with an additional work step in which the electrically conductive contact has to be removed.
  • the intermediate layer has an electrically conductive through-hole contact, i. H. has or can have a via.
  • an electrically conductive through-hole contact i. H. has or can have a via.
  • the present invention relates to a composite of several adapter elements according to the invention, the adapter elements according to the invention being arranged on a common carrier such that they can be separated via a predetermined breaking point.
  • a common intermediate layer preferably a ceramic intermediate layer, extends in the composite both over the carrier and over the adapter element, i. h the adapter elements and the carrier are arranged next to one another in a plane running parallel to a main plane of extent (along which the intermediate layer extends).
  • the first metal layer, the intermediate layer and the second metal layer preferably form the carrier and the Adapter elements.
  • the subdivision between the carrier and the adapter element is implemented by structuring the first metal layer and the second metal layer.
  • the structuring also reveals the visible separation between the individual adapter elements arranged next to one another along a row.
  • the predetermined breaking point is implemented in the ceramic layer, in particular in an area without a first and / or second metal layer.
  • the predetermined breaking point preferably runs both between the individual adapter elements arranged next to one another in a row and between the carrier and the adapter elements arranged in a row.
  • a force or refractive power running essentially perpendicular to the first metal layer or perpendicular to the intermediate layer, ie perpendicular to the main plane of extent of the composite must preferably be applied.
  • the structuring of the first metal layer or the second metal layer defines the contours or shapes of the carrier and the adapter elements.
  • the carrier extends longitudinally essentially parallel to the direction along which the adapter elements are arranged next to one another in a row, and the adapter elements protrude laterally from the carrier.
  • the adapter elements and the carrier are designed like a comb.
  • At least one electrically conductive contact extends between the carrier and the adapter element.
  • a plurality of, in particular two, electrically conductive contacts are preferably provided for a single adapter element, each of which electrically conductively connects subregions of the first metal layer or the second metal layer that are electrically isolated from one another to the carrier.
  • the electrically conductive contact tears when the respective adapter element is separated from the carrier.
  • the electrically conductive contact has a predetermined breaking point, in particular a predetermined breaking point between the adapter elements and the carrier, crosses.
  • the electrically conductive contact crosses the predetermined breaking point, preferably perpendicularly.
  • the electrically conductive contact is preferably designed in the form of a web and in the first metal layer or the second metal layer, in particular, connects the area of the carrier to the area of the adapter element. When breaking along the predetermined breaking point, the electrically conductive contact is then torn off.
  • the carrier has a recess, in particular in the form of a groove, on a side opposite the predetermined breaking point.
  • the groove can be made with a saw, in particular a “wafer saw”.
  • the groove is realized by laser ablation or etching.
  • the groove is preferably arranged below the predetermined breaking point and extends in the lateral direction, i. H. a direction perpendicular to the longitudinal extension of the predetermined breaking point, further than a notch provided for the predetermined breaking point in the intermediate layer.
  • the recess makes it possible in an advantageous manner to avoid an accumulation of material which would otherwise occur on the opposite side when breaking along the predetermined breaking point.
  • Another object of the present invention is a method for producing a composite according to the invention, the first metal layer and / or the second metal layer being bonded to the intermediate layer by means of a DCB method or an active soldering method. All of the features described for the composite according to the invention and their advantages can also be applied analogously to the method according to the invention and vice versa.
  • a “DCB process” (direct copper bond technology) is understood by those skilled in the art to be such a process which is used, for example, to connect metallizations or sheets (for example copper sheets or foils) to one another and / or with ceramic or ceramic layers is used, namely using metal or copper sheets or metal or copper foils, which on their surface sides a layer or a coating (melting layer) made of a chemical compound of the metal and a reactive gas, preferably oxygen, exhibit.
  • this layer or this coating (melting layer) forms a eutectic with a melting temperature below the melting temperature of the metal (e.g. copper), so that by placing the foil on the ceramic and by heating all the layers, these can be connected to one another, and by melting the metal or copper essentially only in the area of the melting layer or oxide layer.
  • an active soldering process e.g. B. for connecting metallizations or metal foils, in particular also of copper layers or copper foils with ceramic material
  • a method is to be understood which is also used specifically for the production of metal-ceramic substrates.
  • This active metal which is, for example, at least one element from the group Hf, Ti, Zr, Nb, Ce, establishes a connection between the solder and the ceramic, while the connection between the solder and the metal is a metallic braze connection.
  • the adapter element is coated by means of a sputtering process.
  • the adapter element can advantageously be coated with a solder material. This solder material can then be used to connect the laser diode to the adapter element.
  • a plurality of adapter elements arranged in a composite are preferably coated in a common sputtering process.
  • the sputtering method is a PVD sputter deposition method.
  • the adapter element is broken off from the combination of adapter elements.
  • the adapter element is removed from the assembly after the laser diode has been attached to the adapter element, d. H. after coating the adapter element as well as fitting and soldering the laser diode onto the coated adapter element.
  • a mounted adapter element 10 is shown according to a first preferred embodiment.
  • Such an adapter element 10 is intended to serve as a link between a cooling body 7 and an electrical component such as a laser diode 4, the cooling body 7 being provided for cooling the laser diode 4, which generates heat during operation.
  • a composite structure is provided as the adapter element 10, the adapter element 10 having in particular a first metal layer 11, which faces the heat sink 7 in the assembled state, and a second metal layer 12, which faces the laser diode 4 in the assembled state.
  • the first metal layer 11 and / or the second metal layer 12 preferably comprises copper.
  • An intermediate layer 13 is also arranged between the first metal layer 11 and the second metal layer 12, the intermediate layer 13 comprising a ceramic.
  • the first metal layer 11 and / or the second metal layer 12 have a primary thickness P1, the primary thickness P1 being greater than 40 ⁇ m, preferably is greater than 70 ⁇ m and particularly preferably greater than 100 ⁇ m.
  • the primary thickness P1 being greater than 40 ⁇ m, preferably is greater than 70 ⁇ m and particularly preferably greater than 100 ⁇ m.
  • Such a thick metal layer enables heat to be spread, that is to say an expansion of an otherwise locally concentrated heat development when heat is removed from the laser diode 4 via the adapter element 10. Furthermore is it is particularly preferably provided that the intermediate layer 13 comprising the ceramic has a secondary thickness P2 which is less than 400 ⁇ m, less than 200 ⁇ m and particularly preferably greater than 200 ⁇ m.
  • a CTE adaptation can advantageously be achieved which, in particular together with the heat spread, leads to a transition between the adapter element 10 and the heat sink 4 that is as stress-free as possible.
  • an intermediate layer 13 with a thermal conductivity of more than 150 W / mK, preferably more than 175 W / mK and particularly preferably more than 225 W / mK is provided.
  • the primary thickness P1 of the first metal layer 11 differs from that of the primary thickness P1 of the second metal layer 12 or is essentially the same size. It is also conceivable that a ratio between an accumulated thickness of the primary thicknesses P1 of the first metal layer 11 and the second metal layer 12 to the secondary thickness P2 is a ratio between 0.7 and 2, preferably between 0.8 and 1.5 and particularly preferably between 0. 95 and 1.2 assumes.
  • the intermediate layer 13 has a via 15.
  • a through-connection 15 allows the adapter element 10 to be used in those applications in which a non-insulating connection of the laser diode 4 to the heat sink 7 is desired.
  • a plurality of adapter elements 10 are shown according to a second preferred embodiment, the adapter elements 10 being combined in an association 1.
  • a composite 1, ie multiframe is provided in particular to those who connect the laser diode 4 via the adapter element 1 want to mount on the heat sink 7.
  • several adapter elements 10 can advantageously be prepared simultaneously for the subsequent connection process of the laser diode 4.
  • the adapter elements 10 are coated by means of a sputtering process in preparation for the connection of the laser diode 4 to the adapter element 10.
  • electrically conductive contacts 8, ie coating contacts are provided for each adapter element 10.
  • these electrically conductive contacts 8 connect the respective adapter element 10 to a carrier 5 on which the adapter elements 10 are arranged.
  • the first metal layer and / or the second metal layer are preferably each connected to the carrier via a conductive contact. Due to the contacts 8 already integrated in the composite 1, individual contacting of the individual adapter elements 10 can advantageously be dispensed with. Furthermore, it is provided that the electrically conductive contacts 8 are dimensioned in such a way that they tear off when the adapter element 10 is removed from the composite 1 or from the carrier 5. As a result, it is possible to dispense with an additional work step during production, with which the electrically conductive contact 8 would have to be removed again.
  • predetermined breaking points 18 are provided in the composite, along which the adapter elements 10 are broken off when the coating process, in particular the sputtering process, has ended and the adapter element 10 is separated from the composite 1.
  • the predetermined breaking point 18 is preferably implemented by laser treatment, for example by a laser scratch line in the ceramic of the intermediate layer which crosses the electrically conductive contacts.
  • saw gaps 19 are provided between the adapter elements 10 which extend into the carrier 5. The individual adapter elements 19 can be separated from one another along these sawing gaps 19 in order to then serve to connect the laser diode 4 to the heat sink 7.
  • the ratio of a depth A of the saw gap 19 in the carrier 5 to the thickness B of the carrier 5 in the region of the adapter element 10 is preferably a value between 0.6 and 0.9, preferably between 0.75 and 0.85 and particularly preferably essentially 0.8. This allows a simple separation of the adapter elements Realize 10 and at the same time ensure sufficient stability that holds the adapter elements 10 together during the sputtering process. Furthermore, it is provided that the carrier 5 has a frame element 20 which laterally adjoins the sequence of adapter elements 10 lined up next to one another and ends flush with the adapter elements 10 on one side. As a result, the adapter elements 10 are protected to the side by the frame elements 20.
  • Figure 3 shows a composite 1 of a plurality of adapter elements 10 according to an exemplary embodiment of the present invention.
  • it is a plan view of the composite 1, in which several adapter elements 10 are arranged next to one another along a row.
  • the view of the composite 1 takes place along a direction which runs parallel to a stacking direction, along which the first metal layer 11, the intermediate layer 13 and the second metal layer 12 are arranged one above the other, ie in FIG. the second metal layer 12 can be seen, the structuring of the first metal layer 11 and the second metal layer 12, among other things, defining the assignment of the respective sections to the adapter element 10 and to the carrier 5.
  • the intermediate layer 13 can be seen in the plan view.
  • the adapter element 10, in particular the composite 1 has several electrically conductive contacts 8, which connect the carrier 5 to the adapter element 10 or various parts of the first metal layer 11 or the second metal layer 12 of the adapter element 10, in particular each connects.
  • the first metal layer 11 or the second metal layer 12 is structured on the composite 1 in such a way that an electrically conductive contact 8 is between the first metal layer 11 or the second Metal layer 12 is formed in the area of the carrier 5 and the first metal layer 11 or the second metal layer 12 in the area of the individual adapter element 10.
  • the electrically conductive contact 8 is preferably designed in the shape of a web.
  • the web-shaped, electrically conductive contact 8 preferably runs perpendicular to the course of the predetermined breaking point 18, along which the adapter elements 10 are separated from the carrier 5. In particular, the electrically conductive contact 5 crosses the predetermined breaking point 18.
  • the web-shaped, electrically conductive contact 8 is at an angle between 30 ° and 90 °, preferably between 45 ° and 85 ° and particularly preferably between 60 ° and 80 ° is inclined with respect to a longitudinal extension of the predetermined breaking point 18.
  • subregions of the first metal layer 11 or second metal layer 12 that are electrically isolated from one another are each connected to the carrier 5 by a separate electrically conductive contact 8, in particular to the first metal layer 11 or second metal layer 12 of the carrier 5 it is provided that along a direction which is determined by the longitudinal extension of the predetermined breaking point 18 between the adapter elements 10 and the carrier 5, a width of the web-like electrically conductive contact 8 is narrower than 0.1 times, preferably less than 0, 05 times and particularly preferably less than 0.01 times the width of the adapter element 10 measured in the same direction.
  • FIG 4 are two sectional views through the composite 1 from Figure 3 shown.
  • the upper sectional view shows a composite 1 before the adapter elements 10 are separated.
  • a force F acts on the composite 1 here.
  • This accumulation of material forms a bead-like projection 25 on the outside of the composite 1.
  • the predetermined breaking point 18 is preferably provided that on the predetermined breaking point 18 opposite side, for example by means of a saw, in particular a "wafer saw", by means of etching or by means of a cutting process, in particular milling, to make a groove 26 in the composite 1.
  • the groove 25 runs below the predetermined breaking point 18 as seen in the stacking direction, the predetermined breaking point particularly preferably being embedded in the intermediate layer 13 in a wedge shape.
  • a lateral extension of the groove 26 is preferably wider than a lateral extension of the gap serving as a predetermined breaking point 18.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

Die vorliegende Erfindung betrifft einen Verbund aus mehreren Adapterelementen und ein Verfahren zur Herstellung eines solchen Verbunds.The present invention relates to a composite made up of a plurality of adapter elements and a method for producing such a composite.

Zur Kühlung von im Betrieb wärmeentwickelnden, elektrischen Bauelementen wie Laserdioden kennt der Stand der Technik Kühlkörper, die mit der Laserdiode über ein Adapterelement verbunden sind. Ein Beispiel hierfür ist in der JP 2004 186 527 A zu finden. Die zwischen der Laserdiode und dem Kühlkörper angeordneten Adapterelemente dienen dabei üblicherweise der Anpassung von unterschiedlichen Ausdehnungskoeffizienten der Materialien, aus denen die Kühlkörper und die elektrischen Bauelements wie OP-Verstärker, Spulen oder Laserdiode gefertigt sind. Hintergrund hierzu ist, dass andernfalls die unterschiedlichen Ausdehnungskoeffizienten im Betrieb zu thermomechanisch induzierten Spannungen im Anbindungsbereich führen können. Folge dieser thermomechanischen Spannungen kann eine Deformation der Laserdiode, die wiederum zu einer Änderung der Emissionswellenlänge der Laserdiode führen kann, oder sogar eine Rissbildung sein.For cooling electrical components that generate heat during operation, such as laser diodes, the prior art knows heat sinks that are connected to the laser diode via an adapter element. An example of this is in the JP 2004 186 527 A to find. The adapter elements arranged between the laser diode and the heat sink are usually used to adapt different expansion coefficients of the materials from which the heat sinks and the electrical components such as OP amplifiers, coils or laser diodes are made. The background to this is that otherwise the different expansion coefficients during operation can lead to thermomechanically induced stresses in the connection area. The consequence of these thermomechanical stresses can be deformation of the laser diode, which in turn can lead to a change in the emission wavelength of the laser diode, or even crack formation.

Zur Herstellung der Verbindung zwischen dem Kühlkörper und der Laserdiode wird daher die Laserdiode über das Adapterelement mit dem Kühlkörper gefügt, insbesondere verlötet unter der Verwendung von AuSn-Lotmaterial. Hierzu müssen die Adapterelemente mit dem AuSn-Lotmaterial beschichtet werden, typischerweise unter Verwendung eines Sputterverfahrens.To produce the connection between the heat sink and the laser diode, the laser diode is therefore joined to the heat sink via the adapter element, in particular soldered using AuSn solder material. For this purpose, the adapter elements must be coated with the AuSn solder material, typically using a sputtering process.

Außerdem ist aus der DE 10 2006 009 159 A1 ein Verbundsubstrat mit einem Träger bekannt, der zumindest an wenigstens einer Oberflächenseite aus einem metallischen Material, beispielsweise aus Kupfer und/oder Aluminium besteht.In addition, from the DE 10 2006 009 159 A1 a composite substrate with a carrier is known which consists of a metallic material, for example copper and / or aluminum, on at least one surface side.

In der US 2003 21 1 708 ist ein Verfahren zur Herstellung eines Halbleiterbauelements beschrieben, das die folgenden Schritte umfasst:

  1. a) Bereitstellen eines Kühlelements mit einem elektrisch isolierenden, plattenförmigen Träger mit einer ersten Hauptfläche und einer zweiten Hauptfläche, wobei die erste Hauptfläche mit einer Metallschicht bedeckt ist,
  2. b) Strukturieren der Metallschicht in eine Mehrzahl von metallischen Flächen derart, dass die metallischen Flächen eine Montageplattform für eine Mehrzahl von Halbleiterlaserdioden bilden,
  3. c) Aufbringen einer Mehrzahl von Laserdioden-Halbleiterkörpern und einer Mehrzahl von optischen Elementen, die den Laserdioden-Halbleiterkörpern zugeordnet sind, wobei jeweils ein Laserdioden-Halbleiterkörper auf einer metallischen Fläche angeordnet ist, und
  4. d) Zerteilen des Kühlelements in die Mehrzahl von Halbleiterlaserbauelementen hergestellt ist.
In the US 2003 21 1 708 a method for producing a semiconductor component is described, which comprises the following steps:
  1. a) providing a cooling element with an electrically insulating, plate-shaped carrier with a first main surface and a second main surface, the first main surface being covered with a metal layer,
  2. b) structuring the metal layer into a plurality of metallic surfaces in such a way that the metallic surfaces form a mounting platform for a plurality of semiconductor laser diodes,
  3. c) applying a plurality of laser diode semiconductor bodies and a plurality of optical elements which are assigned to the laser diode semiconductor bodies, a laser diode semiconductor body in each case being arranged on a metallic surface, and
  4. d) the cooling element is divided into the plurality of semiconductor laser components.

In der DE 10 2005 061 049 A1 ist ein Metall-Keramik-Substrat vorgesehen mit wenigstens einer durch Ätzen strukturierten Metallisierung auf zumindest einer Oberflächenseite eines plattenförmigen Keramikmaterials, welches aus einem Basissubstrat aus einer Aluminiumnitrid- oder Siliziumnitrid-Keramik besteht und auf welches die Metallisierung vor dem Strukturieren durch Aktivlöten aufgebracht ist.In the DE 10 2005 061 049 A1 a metal-ceramic substrate is provided with at least one metallization structured by etching on at least one surface side of a plate-shaped ceramic material, which consists of a base substrate made of an aluminum nitride or silicon nitride ceramic and to which the metallization is applied by active soldering prior to structuring.

Basierend auf diesem Hintergrund macht es sich die vorliegende Erfindung zur Aufgabe, Adapterelemente bereitzustellen, die im Betrieb hohen Temperaturbelastungen standhalten, eine optimale Anpassung der Ausdehnungskoeffizienten im System aus Bauelement wie Laserdiode, Adapterelement und Kühlkörper erlauben und sich vergleichsweise einfach und schnell herstellen lassen.Based on this background, the present invention aims to provide adapter elements that can withstand high temperature loads during operation, allow optimal adaptation of the expansion coefficients in the system of components such as laser diode, adapter element and heat sink, and can be produced comparatively easily and quickly.

Diese Aufgabe wird gelöst durch ein Verbund aus mehreren Adapterelementen gemäß Anspruch 1 und ein Verfahren zur Herstellung eines Verbunds gemäß Anspruch 9. Weitere Vorteile und Merkmale der Erfindung ergeben sich aus den Unteransprüchen sowie der Beschreibung und den beigefügten Figuren.This object is achieved by a composite of several adapter elements according to claim 1 and a method for producing a composite according to claim 9. Further advantages and features of the invention emerge from the dependent claims as well as the description and the accompanying figures.

Erfindungsgemäß ist ein Verbund aus mehreren Adapterelement vorgesehen, die zum Anbinden eines Bauelements wie einer Laserdiode an einen Kühlkörper geeignet sind, vorgesehen, umfassend:

  • -- eine erste Metallschicht, die im montierten Zustand dem Bauelement zugewandt ist, und eine zweite Metallschicht, die im montierten Zustand dem Kühlkörper zugewandt ist, und weiter gekennzeichnet durch
  • -- eine zwischen der ersten Metallschicht und der zweiten Metallschicht angeordnete, Keramik umfassende Zwischenschicht,
wobei die ersten Metallschicht und/oder die zweite Metallschicht dicker als 40 µm, bevorzugt dicker als 70 µm und besonders bevorzugt dicker als 100 µm ist, wobei die Adapterelemente durch eine Sollbruchstelle von einem Träger trennbar sind, und die Adapterelemente einen elektrisch leitenden Kontakt zum Träger des Verbunds aufweisen.According to the invention, a composite of several adapter elements is provided, which are suitable for connecting a component such as a laser diode to a heat sink, comprising:
  • - A first metal layer, which faces the component in the assembled state, and a second metal layer, which faces the heat sink in the assembled state, and further characterized by
  • an intermediate layer comprising ceramic and arranged between the first metal layer and the second metal layer,
the first metal layer and / or the second metal layer being thicker than 40 µm, preferably thicker than 70 µm and particularly preferably thicker than 100 µm, the adapter elements being separable from a carrier by a predetermined breaking point, and the adapter elements providing an electrically conductive contact to the carrier of the network.

Gegenüber dem Stand der Technik ist erfindungsgemäß eine vergleichsweise dicke erste und/oder zweite Metallschicht vorgesehen, deren Dicke mit Vorteil eine Wärmeaufspreizung beim Wärmetransport durch das Adapterelement unterstützt. Diese Wärmeaufspreizung führt wiederum zu einer möglichst homogenen Wärmeverteilung in einem Schnittstellenbereich zwischen dem Kühlkörper und dem Adapterelement. Dadurch lassen sich mit Vorteil thermomechanische Spannungen entgegenwirken, die durch unterschiedliche thermische Ausdehnungskoeffizienten der einzelnen Bauteile bedingt werden. D. h. es lässt sich ein Adapterelement bereitstellen, mit dem sich eine spannungsreduzierte Schnittstelle zwischen Adapterelement und Kühlkörper im montierten Zustand realisieren lässt, wodurch in vorteilhafter Weise eine Rissbildung im System aus z. B. Laserdiode, Adapterelement und Kühlkörper bzw. eine z. B. die Wellenlänge ändernde Deformation der Laserdiode unterdrückt werden kann. Zudem lässt sich die anspruchsgemäße Dicke der ersten Metallschicht und/oder der zweiten Metallschicht in vorteilhafter Weise mittels eines DCB-Verfahrens oder eines Aktivlot-Verfahrens einfach und schnell realisieren. Ferner erlaubt die Verwendung einer die Keramik aufweisenden Zwischenschicht die Anpassung der thermischen Ausdehnungskoeffizienten, wodurch der Ausprägung von thermomechanischen Spannungen im Betrieb weiter entgegengewirkt werden kann.Compared to the prior art, a comparatively thick first and / or second metal layer is provided according to the invention, the thickness of which advantageously supports heat spreading during heat transport through the adapter element. This spread of heat in turn leads to the most homogeneous possible heat distribution in an interface area between the heat sink and the adapter element. This can advantageously counteract thermomechanical stresses that are caused by different thermal expansion coefficients of the individual components. I. E. An adapter element can be provided with which a stress-reduced interface between the adapter element and the heat sink can be implemented in the assembled state, which advantageously causes cracks to form in the system of z. B. laser diode, adapter element and heat sink or a z. B. the wavelength changing deformation of the laser diode can be suppressed. In addition, the thickness of the first metal layer and / or the second metal layer according to the claims can advantageously be achieved simply by means of a DCB method or an active soldering method realize quickly. Furthermore, the use of an intermediate layer comprising the ceramic allows the coefficients of thermal expansion to be adapted, as a result of which the development of thermomechanical stresses during operation can be further counteracted.

Vorzugsweise umfasst die erste Metallschicht und/oder die zweite Metallschicht Kupfer, insbesondere mit einem Reinheitsgrad von 99,98 % oder höher. Weiterhin ist es vorgesehen, dass die Zwischenschicht Al2O3, Si3N4, oder eine HPSX-Keramik (d. h. eine Keramik mit einer Al2O3-Matrix, die einen x-prozentigen Anteil an ZrO2 umfasst, beispielsweise Al2O3 mit 9 % ZrO2 = HPS9 oder Al2O3 mit 25 % ZrO2 = HPS25) aufweist. Besonders bevorzugt ist es vorgesehen, wenn es sich um eine AIN umfassende Keramik handelt, insbesondere mit einer Wärmeleitfähigkeit von mehr als 150 W/mK, bevorzugt mehr als 175 W/mK und besonderes bevorzugt von mehr als 225 W/mK. Dadurch lässt sich mit Vorteil die Anpassung an die Ausdehnungskoeffizienten weiter verbessern.The first metal layer and / or the second metal layer preferably comprises copper, in particular with a degree of purity of 99.98% or higher. It is also provided that the intermediate layer Al 2 O 3 , Si 3 N 4 , or an HPSX ceramic (ie a ceramic with an Al 2 O 3 matrix that includes an x percent share of ZrO 2 , for example Al 2 O 3 with 9% ZrO 2 = HPS9 or Al 2 O 3 with 25% ZrO 2 = HPS25). It is particularly preferred if it is a ceramic comprising AlN, in particular with a thermal conductivity of more than 150 W / mK, preferably more than 175 W / mK and particularly preferably more than 225 W / mK. As a result, the adaptation to the expansion coefficients can advantageously be further improved.

Gemäß einer weiteren Ausführungsform der vorliegenden Erfindung ist es vorgesehen, dass die Zwischenschicht zur Anpassung der Ausdehnungskoeffizienten dünner als 400 µm, bevorzugt dünner als 200 µm und besonders bevorzugt dünner als 100 µm ist. Insbesondere ist es vorgesehen, dass die Zwischenschicht eine Sekundärdicke aufweist, die zur möglichst optimalen Anpassung der Ausdehnungskoeffizienten ausgelegt ist. Dadurch lässt sich eine Unterdrückung von thermomechanischen Spannungen weiter unterstützen. Vorzugsweise nimmt ein Verhältnis zwischen einer aufsummierten Dicke einer Primärschichtdicke der ersten Metallschicht und einer Primärschichtdicke der zweiten Metallschicht zur Sekundärschichtdicke der Zwischenschicht einen Wert zwischen 0,7 und 2, bevorzugt zwischen 0,8 und 1,5 und besonders bevorzugt zwischen 0,95 und 1,2 an.According to a further embodiment of the present invention, it is provided that the intermediate layer is thinner than 400 μm, preferably thinner than 200 μm and particularly preferably thinner than 100 μm, in order to adapt the expansion coefficients. In particular, it is provided that the intermediate layer has a secondary thickness that is designed for the most optimal possible adaptation of the expansion coefficients. This further supports the suppression of thermomechanical stresses. A ratio between a total thickness of a primary layer thickness of the first metal layer and a primary layer thickness of the second metal layer to the secondary layer thickness of the intermediate layer preferably has a value between 0.7 and 2, preferably between 0.8 and 1.5 and particularly preferably between 0.95 and 1 , 2 at.

Vorzugsweise nimmt die Sekundärschicht eine Dicke zwischen 0,05 mm und 0,5 mm, bevorzugt zwischen 0,1 mm und 0,4 mm und besonders bevorzugt zwischen 0,2 und 0,38 mm an. Ferner sind als Primärschichtdicke der einzelnen ersten Metallschicht bzw. der zweiten Metallschicht Werte zwischen 0,01 mm und 0,15 mm, bevorzugt zwischen 0,02 und 0,13 mm und besonders bevorzugt zwischen 0,025 und 0,11 mm vorstellbar. Insbesondere nimmt ein Verhältnis der aufsummierten Primärschichtdicke der ersten und der zweiten Metallschicht zur Sekundärschichtdicke der Zwischenschicht einen Wert zwischen 0,2 und 0,8, bevorzugt zwischen 0,25 und 0,65 und besonders bevorzugt zwischen 0,3 und 0,55 an. Vorzugsweise ist es vorgesehen, dass das Adapterelement zu mindestens 20 % aus der ersten Metallschicht und der zweiten Metallschicht gebildet ist.The secondary layer preferably assumes a thickness between 0.05 mm and 0.5 mm, preferably between 0.1 mm and 0.4 mm and particularly preferably between 0.2 and 0.38 mm. Furthermore, the primary layer thickness of the individual first metal layer or the second metal layer is between 0.01 mm and 0.15 mm, preferably between 0.02 and 0.13 mm and particularly preferably between 0.025 and 0.11 mm conceivable. In particular, a ratio of the total primary layer thickness of the first and second metal layer to the secondary layer thickness of the intermediate layer assumes a value between 0.2 and 0.8, preferably between 0.25 and 0.65 and particularly preferably between 0.3 and 0.55. It is preferably provided that the adapter element is formed to an extent of at least 20% from the first metal layer and the second metal layer.

In einer weiteren Ausführungsform der vorliegenden Erfindung ist es vorgesehen, dass mehrere Adapterelemente in einem Verbund bereitgestellt sind, wobei die Adapterelemente durch eine Sollbruchstelle vom Träger trennbarsind. Dies gestattet mit Vorteil eine gemeinsame Handhabe von mehreren Adapterelementen. D. h. die einzelnen Adapterelemente müssen nicht jeweils einzeln transportiert bzw. für die Anbindung der Laserdioden vorbereitet werden. Beispielsweise lassen sich die mehreren Adapterelemente gemeinsam beschichten, wodurch die Fertigung der einzelnen Adapterelemente mit Vorteil vereinfacht wird. Vorzugsweise sind die Adapterelemente nebeneinander auf einem gemeinsamen Träger angeordnet und die benachbarten Adapterelemente sind durch entsprechende Sollbruchstellen voneinander getrennt.In a further embodiment of the present invention it is provided that several adapter elements are provided in a composite, the adapter elements being separable from the carrier by a predetermined breaking point. This advantageously allows a number of adapter elements to be handled jointly. I. E. the individual adapter elements do not have to be transported individually or prepared for the connection of the laser diodes. For example, the multiple adapter elements can be coated together, which advantageously simplifies the manufacture of the individual adapter elements. The adapter elements are preferably arranged next to one another on a common carrier and the adjacent adapter elements are separated from one another by corresponding predetermined breaking points.

Zweckmäßig ist es vorgesehen, dass das Adapterelement oder die Adapterelemente einen elektrisch leitenden Kontakt, insbesondere zu einem Träger des Verbunds, aufweisen. Die Anbindung über einen elektrischen Kontakt erweist sich insbesondere deshalb als vorteilhaft, weil mittels des elektrischen Kontakts das Adapterelement auf ein gewünschtes Potential für ein Sputterverfahren gehalten werden kann. Mit anderen Worten: Die Integration des elektrischen Kontakts ermöglicht es mit Vorteil, dass auf ein Einzelkontaktieren bei einem erforderlichen Beschichten des Adapterelements, insbesondere mit einem Lotmaterial, verzichtet werden kann. Dadurch wird die Anbindung der Laserdiode an den Kühlkörper weiter vereinfacht.It is expediently provided that the adapter element or the adapter elements have an electrically conductive contact, in particular with a carrier of the assembly. The connection via an electrical contact proves to be particularly advantageous because the adapter element can be kept at a desired potential for a sputtering process by means of the electrical contact. In other words: the integration of the electrical contact advantageously makes it possible to dispense with individual contacting when the adapter element is required to be coated, in particular with a solder material. This further simplifies the connection of the laser diode to the heat sink.

Besonders bevorzugt ist es vorgesehen, dass die erste Metallschicht und/oder die zweite Metallschicht eine Dicke zwischen 75 µm und 120 µm aufweist.It is particularly preferably provided that the first metal layer and / or the second metal layer has a thickness between 75 μm and 120 μm.

Vorzugsweise ist es vorgesehen, dass der elektrisch leitende Kontakt derart gestaltet ist, dass er beim Brechen der Sollbruchstelle abreißt. Insbesondere ist der elektrisch leitende Kontakt derart dünn gestaltet, dass er beim Aufwenden einer für das Abbrechen des Adapterelements entlang der Sollbruchstelle erforderlichen Kraft, abreißt. Vorstellbar ist auch, dass der elektrisch leitende Kontakt perforiert ist oder eine lokale Materialverdünnung aufweist. Durch die entsprechende Ausgestaltung des elektrisch leitenden Kontakts kann mit Vorteil auf einen zusätzlichen Arbeitsschritt verzichtet werden, in dem der elektrische leitende Kontakt entfernt werden muss.It is preferably provided that the electrically conductive contact is designed in such a way that it tears off when the predetermined breaking point is broken. In particular, the electrically conductive contact is made so thin that it tears off when a force required for breaking off the adapter element along the predetermined breaking point is applied. It is also conceivable that the electrically conductive contact is perforated or has a local material thinning. The corresponding configuration of the electrically conductive contact can advantageously dispense with an additional work step in which the electrically conductive contact has to be removed.

Gemäß einer weiteren Ausführungsform der vorliegenden Erfindung ist es vorgesehen, dass die Zwischenschicht eine elektrisch leitende Durchkontaktierung, d. h. einen Via, aufweist bzw. aufweisen kann. Mittels einer Durchkontaktierung durch die andernfalls isolierend wirkende Zwischenschicht ist es mit Vorteil möglich, das Adapterelement auch für solche Anwendungsfälle zu nutzen, bei denen eine elektrische leitendende Verbindung zwischen der Laserdiode und dem Kühlkörper vorgesehen ist. Alternativ ist es vorstellbar, dass die Zwischenschicht isolierend für solche Anwendungsfälle, für die keine elektrische Verbindung zwischen der Laserdiode und dem Kühlkörper vorgesehen ist, ausgestaltet ist.According to a further embodiment of the present invention, it is provided that the intermediate layer has an electrically conductive through-hole contact, i. H. has or can have a via. By means of a through-contact through the otherwise insulating intermediate layer, it is advantageously possible to use the adapter element also for those applications in which an electrically conductive connection is provided between the laser diode and the heat sink. Alternatively, it is conceivable that the intermediate layer is designed to be insulating for those applications for which no electrical connection is provided between the laser diode and the heat sink.

Die vorliegende Erfindung betrifft ein Verbund aus mehreren erfindungsgemäßen Adapterelementen, wobei die Adapterelemente erfindungsgemäß über eine Sollbruchstelle trennbar an einem gemeinsamen Träger angeordnet sind. Insbesondere erstreckt sich im Verbund eine gemeinsame Zwischenschicht, vorzugsweise keramische Zwischenschicht, sowohl über den Träger als auch über das Adapterelement, d. h die Adapterelemente und der Träger sind in einer parallel zu einer Haupterstreckungsebene (entlang derer sich die Zwischenschicht erstreckt) verlaufenden Ebene nebeneinander angeordnet. Vorzugsweise bilden die erste Metallschicht, die Zwischenschicht und die zweite Metallschicht den Träger und die Adapterelemente. Die Unterteilung zwischen Träger und Adapterelement ist durch eine Strukturierung in der ersten Metallschicht und der zweiten Metallschicht realisiert. Die Strukturierung lässt auch die sichtbare Trennung zwischen den einzelnen nebeneinander entlang einer Reihe angeordneten Adapterelementen erkennen. Insbesondere ist die Sollbruchstelle in der Keramikschicht, insbesondere in einem Bereich ohne erste und/oder zweite Metallschicht realisiert. Vorzugsweise verläuft die Sollbruchstelle sowohl zwischen den einzelnen in einer Reihe nebeneinander angeordneten Adapterelementen und zwischen dem Träger und den in einer Reihe angeordneten Adapterelementen. Zum Vereinzeln, d. h. zum Abbrechen der einzelnen Adapterelemente, muss vorzugsweise eine im Wesentlichen senkrecht zur ersten Metallschicht bzw. senkrecht zur Zwischenschicht, d. h. senkrecht zur Haupterstreckungsebene des Verbunds, verlaufende Kraft bzw. Brechkraft aufgewendet werden. Insbesondere ist es vorgesehen, dass durch die Strukturierung der ersten Metallschicht bzw. der zweiten Metallschicht, die Konturen bzw. Formen des Trägers und der Adapterelemente festgelegt werden.The present invention relates to a composite of several adapter elements according to the invention, the adapter elements according to the invention being arranged on a common carrier such that they can be separated via a predetermined breaking point. In particular, a common intermediate layer, preferably a ceramic intermediate layer, extends in the composite both over the carrier and over the adapter element, i. h the adapter elements and the carrier are arranged next to one another in a plane running parallel to a main plane of extent (along which the intermediate layer extends). The first metal layer, the intermediate layer and the second metal layer preferably form the carrier and the Adapter elements. The subdivision between the carrier and the adapter element is implemented by structuring the first metal layer and the second metal layer. The structuring also reveals the visible separation between the individual adapter elements arranged next to one another along a row. In particular, the predetermined breaking point is implemented in the ceramic layer, in particular in an area without a first and / or second metal layer. The predetermined breaking point preferably runs both between the individual adapter elements arranged next to one another in a row and between the carrier and the adapter elements arranged in a row. To separate, ie to break off the individual adapter elements, a force or refractive power running essentially perpendicular to the first metal layer or perpendicular to the intermediate layer, ie perpendicular to the main plane of extent of the composite, must preferably be applied. In particular, it is provided that the structuring of the first metal layer or the second metal layer defines the contours or shapes of the carrier and the adapter elements.

Weiterhin ist es vorgesehen, dass sich der Träger im Wesentlichen parallel zu der Richtung längserstreckt, entlang die Adapterelemente nebeneinander in einer Reihe angeordnet sind, und die Adapterelemente stehen seitlich vom Träger ab. Die Adapterelemente und der Träger sind dabei kammähnlich ausgestaltet.Furthermore, it is provided that the carrier extends longitudinally essentially parallel to the direction along which the adapter elements are arranged next to one another in a row, and the adapter elements protrude laterally from the carrier. The adapter elements and the carrier are designed like a comb.

Erfindungsgemäß ist es vorgesehen, dass sich zwischen dem Träger und dem Adapterelement zumindest ein elektrisch leitender Kontakt erstreckt. Vorzugsweise sind mehrere, insbesondere zwei, elektrisch leitende Kontakte für ein einzelnes Adapterelement vorgesehen, die jeweils voneinander elektrisch isolierte Teilbereiche des ersten Metallschicht bzw. der zweiten Metallschicht mit dem Träger elektrisch leitend verbindet. Insbesondere reißt der elektrisch leitende Kontakt beim Trennen des jeweiligen Adapterelements vom Träger.According to the invention it is provided that at least one electrically conductive contact extends between the carrier and the adapter element. A plurality of, in particular two, electrically conductive contacts are preferably provided for a single adapter element, each of which electrically conductively connects subregions of the first metal layer or the second metal layer that are electrically isolated from one another to the carrier. In particular, the electrically conductive contact tears when the respective adapter element is separated from the carrier.

Vorzugsweise ist es vorgesehen, dass im Verbund der elektrisch leitende Kontakt eine Sollbruchstelle, insbesondere eine Sollbruchstelle zwischen den Adapterelementen und dem Träger, kreuzt. Insbesondere quert der elektrisch leitende Kontakt die Sollbruchstelle, vorzugsweise senkrecht. Dabei ist der elektrisch leitende Kontakt vorzugsweise stegförmig ausgestaltet und verbindet in der ersten Metallschicht bzw. der zweiten Metallschicht insbesondere den Bereich des Trägers mit dem Bereich des Adapterelements. Beim Brechen entlang der Sollbruchstelle wird dann der elektrisch leitende Kontakt abgerissen.It is preferably provided that in the composite the electrically conductive contact has a predetermined breaking point, in particular a predetermined breaking point between the adapter elements and the carrier, crosses. In particular, the electrically conductive contact crosses the predetermined breaking point, preferably perpendicularly. In this case, the electrically conductive contact is preferably designed in the form of a web and in the first metal layer or the second metal layer, in particular, connects the area of the carrier to the area of the adapter element. When breaking along the predetermined breaking point, the electrically conductive contact is then torn off.

Vorzugsweise ist es vorgesehen, dass zur Vermeidung einer Materialanhäufung beim Brechen entlang einer Sollbruchstelle der Träger auf einer der Sollbruchstelle gegenüberliegenden Seite eine Aussparung, insbesondere in Form einer Nut, aufweist. Beispielsweise lässt sich die Nut mit einer Säge realisieren, insbesondere einer "Wafersäge". Alternativ oder ergänzend ist es auch vorstellbar, dass die Nut durch Laserablation oder Ätzen realisiert wird. Dabei ist die Nut vorzugsweise unterhalb der Sollbruchstelle angeordnet und erstreckt sich in lateraler Richtung, d. h. einer Richtung senkrecht zur Längserstreckung der Sollbruchstelle, weiter als eine für die Sollbruchstelle vorgesehene Einkerbung in der Zwischenschicht. Durch die Aussparung ist es in vorteilhafter Weise möglich, eine Materialanhäufung zu vermeiden, die andernfalls beim Brechen entlang der Sollbruchstelle auf der gegenüberliegenden Seite auftreten würden.It is preferably provided that in order to avoid an accumulation of material when breaking along a predetermined breaking point, the carrier has a recess, in particular in the form of a groove, on a side opposite the predetermined breaking point. For example, the groove can be made with a saw, in particular a “wafer saw”. As an alternative or in addition, it is also conceivable that the groove is realized by laser ablation or etching. In this case, the groove is preferably arranged below the predetermined breaking point and extends in the lateral direction, i. H. a direction perpendicular to the longitudinal extension of the predetermined breaking point, further than a notch provided for the predetermined breaking point in the intermediate layer. The recess makes it possible in an advantageous manner to avoid an accumulation of material which would otherwise occur on the opposite side when breaking along the predetermined breaking point.

Ein weiterer Gegenstand der vorliegenden Erfindung ist ein Verfahren zur Herstellung eines erfindungsgemäßen Verbunds, wobei die erste Metallschicht und/oder die zweite Metallschicht mittels eines DCB -Verfahrens oder eines Aktivlotverfahrens an die Zwischenschicht angebunden werden. Alle für den erfindungsgemäßen Verbund beschriebenen Merkmale und deren Vorteile lassen sich sinngemäß ebenfalls auf das erfindungsgemäße Verfahren übertragen und andersherum.Another object of the present invention is a method for producing a composite according to the invention, the first metal layer and / or the second metal layer being bonded to the intermediate layer by means of a DCB method or an active soldering method. All of the features described for the composite according to the invention and their advantages can also be applied analogously to the method according to the invention and vice versa.

Unter einem "DCB-Verfahren" (Direct-Copper-Bond-Technology) versteht der Fachmann ein solches Verfahren, das beispielsweise zum Verbinden von Metallisierungen oder -blechen (z. B. Kupferblechen oder -folien) miteinander und/oder mit Keramik oder Keramikschichten dient, und zwar unter Verwendung von Metall- bzw. Kupferblechen oder Metall- bzw. Kupferfolien, die an ihren Oberflächenseiten eine Schicht oder einen Überzug (Aufschmelzschicht) aus einer chemischen Verbindung aus dem Metall und einem reaktiven Gas, bevorzugt Sauerstoff, aufweisen. Bei diesem beispielsweise in der US-PS 37 44 120 oder in der DE-PS 23 19 854 beschriebenen Verfahren bildet diese Schicht oder dieser Überzug (Aufschmelzschicht) ein Eutektikum mit einer Schmelztemperatur unter der Schmelztemperatur des Metalls (z. B. Kupfers), so dass durch Auflegen der Folie auf die Keramik und durch Erhitzen sämtlicher Schichten diese miteinander verbunden werden können, und zwar durch Aufschmelzen des Metalls bzw. Kupfers im Wesentlichen nur im Bereich der Aufschmelzschicht bzw. Oxidschicht.A “DCB process” (direct copper bond technology) is understood by those skilled in the art to be such a process which is used, for example, to connect metallizations or sheets (for example copper sheets or foils) to one another and / or with ceramic or ceramic layers is used, namely using metal or copper sheets or metal or copper foils, which on their surface sides a layer or a coating (melting layer) made of a chemical compound of the metal and a reactive gas, preferably oxygen, exhibit. In this example in the U.S. Patent 3,744,120 or in the DE-PS 23 19 854 described method, this layer or this coating (melting layer) forms a eutectic with a melting temperature below the melting temperature of the metal (e.g. copper), so that by placing the foil on the ceramic and by heating all the layers, these can be connected to one another, and by melting the metal or copper essentially only in the area of the melting layer or oxide layer.

Insbesondere weist das DCB-Verfahren dann z. B. folgende Verfahrensschritte auf:

  • Oxidieren einer Kupferfolie derart, dass sich eine gleichmäßige Kupferoxidschicht ergibt;
  • Auflegen des Kupferfolie auf die Keramikschicht;
  • Erhitzen des Verbundes auf eine Prozesstemperatur zwischen etwa 1065°C bis 1083°C, z. B. auf ca. 1071 °C;
  • Abkühlen auf Raumtemperatur.
In particular, the DCB method then z. B. on the following process steps:
  • Oxidizing a copper foil in such a way that a uniform copper oxide layer results;
  • Placing the copper foil on the ceramic layer;
  • Heating the composite to a process temperature between about 1065 ° C to 1083 ° C, e.g. B. to about 1071 ° C;
  • Cool down to room temperature.

Unter einem Aktivlot-Verfahren, z. B. zum Verbinden von Metallisierungen oder Metallfolien, insbesondere auch von Kupferschichten oder Kupferfolien mit Keramikmaterial, ist ein Verfahren zu verstehen, welches speziell auch zum Herstellen von Metall-Keramik-Substraten verwendet wird. Hierbei wird bei einer Temperatur zwischen ca. 650 - 1000 °C eine Verbindung zwischen einer Metallfolie, beispielsweise Kupferfolie, und einem Keramiksubstrat, beispielsweise Aluminiumnitrid-Keramik, unter Verwendung eines Hartlots hergestellt, welches zusätzlich zu einer Hauptkomponente, wie Kupfer, Silber und/oder Gold auch ein Aktivmetall enthält. Dieses Aktivmetall, welches beispielsweise wenigstens ein Element der Gruppe Hf, Ti, Zr, Nb, Ce ist, stellt durch chemische Reaktion eine Verbindung zwischen dem Lot und der Keramik her, während die Verbindung zwischen dem Lot und dem Metall eine metallische Hartlöt-Verbindung ist.Under an active soldering process, e.g. B. for connecting metallizations or metal foils, in particular also of copper layers or copper foils with ceramic material, a method is to be understood which is also used specifically for the production of metal-ceramic substrates. Here, a connection between a metal foil, for example copper foil, and a ceramic substrate, for example aluminum nitride ceramic, is produced at a temperature between approx Gold also contains an active metal. This active metal, which is, for example, at least one element from the group Hf, Ti, Zr, Nb, Ce, establishes a connection between the solder and the ceramic, while the connection between the solder and the metal is a metallic braze connection.

Vorzugsweise ist es vorgesehen, dass das Adapterelement mittels eines Sputterverfahrens beschichtet wird. Dadurch lässt sich das Adapterelement mit Vorteil mit einem Lotmaterial beschichten. Dieses Lotmaterial lässt sich dann zur Anbindung der Laserdiode an das Adapterelement nutzen. Vorzugsweise werden mehrere im Verbund angeordnete Adapterelemente in einem gemeinsamen Sputterprozess beschichtet. Insbesondere handelt es sich bei dem Sputterverfahren um ein PVD-Sputterdeposition -Verfahren.It is preferably provided that the adapter element is coated by means of a sputtering process. As a result, the adapter element can advantageously be coated with a solder material. This solder material can then be used to connect the laser diode to the adapter element. A plurality of adapter elements arranged in a composite are preferably coated in a common sputtering process. In particular, the sputtering method is a PVD sputter deposition method.

Zweckmäßig ist es vorgesehen, dass das Adapterelement aus dem Verbund von Adapterelementen abgebrochen wird. Insbesondere ist es vorgesehen, dass das Adapterelement aus dem Verbund entfernt wird, nachdem die Laserdiode auf dem Adapterelement befestigt wurde, d. h. nach einem Beschichten des Adapterelements sowie Bestücken und Auflöten der Laserdiode auf das beschichtete Adapterelement.It is expediently provided that the adapter element is broken off from the combination of adapter elements. In particular, it is provided that the adapter element is removed from the assembly after the laser diode has been attached to the adapter element, d. H. after coating the adapter element as well as fitting and soldering the laser diode onto the coated adapter element.

Weitere Vorteile und Merkmale ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsformen des erfindungsgemäßen Gegenstands mit Bezug auf die beigefügten Figuren. Einzelne Merkmale der einzelnen Ausführungsform können dabei im Rahmen der Erfindung miteinander kombiniert werden.Further advantages and features emerge from the following description of preferred embodiments of the subject matter according to the invention with reference to the attached figures. Individual features of the individual embodiment can be combined with one another within the scope of the invention.

Es zeigt:

Fig.1:
ein montiertes Adapterelement,
Fig. 2:
mehrere Adapterelemente gemäß einer zweiten bevorzugten Ausführungsform, wobei die Adapterelemente in einem Verband zusammengefasst sind,
Fig.3:
ein Verbund aus mehreren Adapterelementen gemäß einer beispielhaften Ausführungsform der vorliegenden Erfindung in einer Draufsicht und
Fig.4:
zwei Verbunde von mehreren Adapterelement gemäß weiterer beispielhafter Ausführungsform der vorliegenden Erfindung in Seitenansichten.
It shows:
Fig. 1:
a mounted adapter element,
Fig. 2:
several adapter elements according to a second preferred embodiment, wherein the adapter elements are combined in an association,
Fig. 3:
a composite of several adapter elements according to an exemplary embodiment of the present invention in a plan view and
Fig. 4:
two assemblies of several adapter elements according to a further exemplary embodiment of the present invention in side views.

In Figur 1 ist ein montiertes Adapterelement 10 gemäß einer ersten bevorzugten Ausführungsform dargestellt. Solch ein Adapterelement 10 ist dazu vorgesehen, als Bindeglied zwischen einem Kühlköper 7 und einem elektrischen Bauelement wie einer Laserdiode 4 zu dienen, wobei der Kühlkörper 7 zur Kühlung der im Betrieb wärmeentwickelnden Laserdiode 4 vorgesehen ist. Hierbei ist als Adapterelement 10 ein Verbundstruktur vorgesehen, wobei das Adapterelement 10 insbesondere eine erste Metallschicht 11, die im montierten Zustand dem Kühlkörper 7 zugewandt ist, und eine zweite Metallschicht 12, die im montierten Zustand der Laserdiode 4 zugewandt ist, aufweist. Vorzugsweise umfasst die erste Metallschicht 11 und/oder zweite Metallschicht 12 Kupfer. Zwischen der ersten Metallschicht 11 und der zweiten Metallschicht 12 ist weiterhin eine Zwischenschicht 13 angeordnet, wobei die Zwischenschicht 13 eine Keramik aufweist. Um eine möglichst homogene Wärmeverteilung in einem Schnittstellenbereich zwischen dem Adapterelement 10 und dem Kühlkörper 7 zu erzielen, ist es vorgesehen, dass die erste Metallschicht 11 und/oder die zweite Metallschicht 12 eine Primärdicke P1 aufweist, wobei die Primärdicke P1 größer als 40 µm, bevorzugt größer als 70 µm und besonders bevorzugt größer als 100 µm ist. Hierbei hat sich insbesondere herausgestellt, dass sich derart dicke Metallschichten mittels eines DCB-Verfahrens oder eines Aktivlot-Verfahrens vergleichsweise einfach und insbesondere schnell realisieren lassen.In Figure 1 a mounted adapter element 10 is shown according to a first preferred embodiment. Such an adapter element 10 is intended to serve as a link between a cooling body 7 and an electrical component such as a laser diode 4, the cooling body 7 being provided for cooling the laser diode 4, which generates heat during operation. A composite structure is provided as the adapter element 10, the adapter element 10 having in particular a first metal layer 11, which faces the heat sink 7 in the assembled state, and a second metal layer 12, which faces the laser diode 4 in the assembled state. The first metal layer 11 and / or the second metal layer 12 preferably comprises copper. An intermediate layer 13 is also arranged between the first metal layer 11 and the second metal layer 12, the intermediate layer 13 comprising a ceramic. In order to achieve the most homogeneous heat distribution possible in an interface area between the adapter element 10 and the heat sink 7, it is provided that the first metal layer 11 and / or the second metal layer 12 have a primary thickness P1, the primary thickness P1 being greater than 40 μm, preferably is greater than 70 µm and particularly preferably greater than 100 µm. In particular, it has been found here that such thick metal layers can be implemented comparatively easily and, in particular, quickly by means of a DCB method or an active soldering method.

Durch eine derart dicke Metallschicht ist eine Wärmespreizung, d. h. eine Aufweitung einer andernfalls lokal konzentrierten Wärmentwicklung, beim Wärmeabtransport von der Laserdiode 4 über das Adapterelement 10 möglich. Weiterhin ist es besonders bevorzugt vorgesehen, dass die die Keramik umfassende Zwischenschicht 13 eine Sekundärdicke P2 aufweist, die kleiner als 400 µm, kleiner als 200 µm und besonders bevorzugt größer als 200 µm ist. Mittels einer solch dicken Zwischenschicht 13 lässt sich mit Vorteil eine CTE-Anpassung erzielen, die insbesondere zusammen mit der Wärmespreizung zu einem möglichst spannungsfreien Übergang zwischen dem Adapterelement 10 und dem Kühlkörper 4 führt. D. h. im Betrieb der Laserdiode 4, die verantwortlich für eine Wärmeentwicklung ist, wird durch die entsprechende Anpassung der Primärdicke P1 und/oder Sekundärdicke P2 eine Ausbildung einer thermomechanischen Spannung unterdrückt bzw. geschwächt. Dadurch lässt sich eine Wahrscheinlichkeit für eine Rissbildung bzw. eine Deformation der Laserdiode 4 reduzieren. Zur weiteren Verbesserung der Leitfähigkeit ist vorzugsweise eine Zwischenschicht 13 mit einer Wärmeleitfähigkeit von mehr als 150 W/mK, bevorzugt mehr als 175 W/mK und besonderes bevorzugt von mehr als 225 W/mK vorgesehen.Such a thick metal layer enables heat to be spread, that is to say an expansion of an otherwise locally concentrated heat development when heat is removed from the laser diode 4 via the adapter element 10. Furthermore is it is particularly preferably provided that the intermediate layer 13 comprising the ceramic has a secondary thickness P2 which is less than 400 μm, less than 200 μm and particularly preferably greater than 200 μm. By means of such a thick intermediate layer 13, a CTE adaptation can advantageously be achieved which, in particular together with the heat spread, leads to a transition between the adapter element 10 and the heat sink 4 that is as stress-free as possible. I. E. During operation of the laser diode 4, which is responsible for the generation of heat, the formation of a thermomechanical stress is suppressed or weakened by the corresponding adaptation of the primary thickness P1 and / or secondary thickness P2. As a result, the probability of crack formation or deformation of the laser diode 4 can be reduced. To further improve the conductivity, an intermediate layer 13 with a thermal conductivity of more than 150 W / mK, preferably more than 175 W / mK and particularly preferably more than 225 W / mK is provided.

Weiterhin ist es vorstellbar, dass die Primärdicke P1 der ersten Metallschicht 11 sich von der der Primärdicke P1 der zweiten Metallschicht 12 unterscheidet oder im Wesentlichen gleich groß ist. Denkbar ist ferner, dass ein Verhältnis zwischen einer aufsummierten Dicke der Primärdicken P1 der ersten Metallschicht 11 und der zweiten Metallschicht 12 zur Sekundärdicke P2 ein Verhältnis zwischen 0,7 und 2, bevorzugt zwischen 0,8 und 1,5 und besonders bevorzugt zwischen 0,95 und 1,2 annimmt.Furthermore, it is conceivable that the primary thickness P1 of the first metal layer 11 differs from that of the primary thickness P1 of the second metal layer 12 or is essentially the same size. It is also conceivable that a ratio between an accumulated thickness of the primary thicknesses P1 of the first metal layer 11 and the second metal layer 12 to the secondary thickness P2 is a ratio between 0.7 and 2, preferably between 0.8 and 1.5 and particularly preferably between 0. 95 and 1.2 assumes.

Weiterhin ist es bevorzugt vorgesehen, dass die Zwischenschicht 13 eine Durchkontaktierung 15 aufweist. Eine solche Durchkontaktierung 15 erlaubt eine Nutzung des Adapterelements 10 bei solchen Anwendungsfällen, in denen eine nichtisolierende Anbindung der Laserdiode 4 an den Kühlkörper 7 erwünscht ist.Furthermore, it is preferably provided that the intermediate layer 13 has a via 15. Such a through-connection 15 allows the adapter element 10 to be used in those applications in which a non-insulating connection of the laser diode 4 to the heat sink 7 is desired.

In der Figur 2 sind mehrere Adapterelemente 10 gemäß einer zweiten bevorzugten Ausführungsform dargestellt, wobei die Adapterelemente 10 in einem Verband 1 zusammengefasst sind. Ein solcher Verbund 1, d. h. Multiframe, wird insbesondere demjenigen bereitgestellt, der die Laserdiode 4 über das Adapterelement 1 an den Kühlkörper 7 montieren möchte. Durch die Anordnung im Verbund 1 können mit Vorteil mehrere Adapterelemente 10 simultan für den anschließenden Anbindungsprozess der Laserdiode 4 vorbereitet werden. Beispielsweise werden die Adapterelement 10 zur Vorbereitung vor der Anbindung der Laserdiode 4 am Adapterelement 10 mittels eines Sputterverfahrens beschichtet. Um eine für das Sputterverfahren erforderliche elektrische Kontaktierung der Adapterelemente 10 sicherzustellen, sind für jedes Adapterelement 10 elektrisch leitenden Kontakte 8, d. h. Beschichtungskontakte, vorgesehen. Insbesondere verbinden diese elektrisch leitenden Kontakte 8 das jeweilige Adapterelement 10 mit einem Träger 5, auf dem die Adapterelementen 10 angeordnet sind. Vorzugsweise werden die erste Metallsicht und/oder die zweite Metallschicht jeweils über einen leitenden Kontakt mit dem Träger verbunden. Durch die bereits in den Verbund 1 integrierten Kontakte 8 kann mit Vorteil auf eine Einzelkontaktierung der einzelnen Adapterelemente 10 verzichtet werden. Ferner ist es vorgesehen, dass die elektrisch leitenden Kontakte 8 derart dimensioniert sind, dass sie beim Entfernen des Adapterelements 10 vom Verbund 1 bzw. vom Träger 5 abreißen. Dadurch kann bei der Fertigung auf einen zusätzlichen Arbeitsschritt verzichtet werden, mit dem der elektrisch leitende Kontakt 8 wieder entfernt werden müsste. Vorzugsweise sind im Verbund Sollbruchstellen 18 vorgesehen, entlang der die Adapterelemente 10 abgebrochen werden, wenn das Beschichtungsverfahren, insbesondere das Sputterverfahren, beendet ist und das Adapterelement 10 vom Verbund 1 getrennt wird. Vorzugsweise wird die Sollbruchstelle 18 durch eine Laserbehandlung realisiert, z.B. durch eine Laserritzlinie in der Keramik der Zwischenschicht, die die elektrisch leitenden Kontakten kreuzt. Ferner sind zwischen den Adapterelementen 10 Sägespalte 19 vorgesehen, die bis in den Träger 5 reichen. Entlang dieser Sägespalte 19 lassen sich die einzelnen Adapterelemente 19 voneinander trennen, um anschließend zur Anbindung der Laserdiode 4 auf dem Kühlkörper 7 zu dienen. Vorzugsweise beträgt das Verhältnis einer Tiefe A des Sägespalt 19 in den Träger 5 zur Dicke B des Trägers 5 im Bereich der Adapterelement 10 einen Wert zwischen 0,6 und 0,9, bevorzugt zwischen 0,75 und 0,85 und besonders bevorzugt im Wesentlichen 0,8. Dadurch lässt sich ein einfaches Trennen der Adapterelemente 10 realisieren und gleichzeitig wird eine ausreichende Stabilität gewährleistet, die die Adapterelemente 10 während des Sputterverfahrens zusammenhält. Weiterhin ist es vorgesehen, dass der Träger 5 ein Rahmenelement 20 aufweist, das sich seitlich an die Folge von nebeneinander aufgereihten Adapterelementen 10 anschließt und zu einer Seite hin bündig mit den Adapterelementen 10 abschließt. Dadurch werden die Adapterelemente 10 zur Seite hin von den Rahmenelementen 20 geschützt.In the Figure 2 a plurality of adapter elements 10 are shown according to a second preferred embodiment, the adapter elements 10 being combined in an association 1. Such a composite 1, ie multiframe, is provided in particular to those who connect the laser diode 4 via the adapter element 1 want to mount on the heat sink 7. Due to the arrangement in the composite 1, several adapter elements 10 can advantageously be prepared simultaneously for the subsequent connection process of the laser diode 4. For example, the adapter elements 10 are coated by means of a sputtering process in preparation for the connection of the laser diode 4 to the adapter element 10. In order to ensure the electrical contacting of the adapter elements 10 required for the sputtering process, electrically conductive contacts 8, ie coating contacts, are provided for each adapter element 10. In particular, these electrically conductive contacts 8 connect the respective adapter element 10 to a carrier 5 on which the adapter elements 10 are arranged. The first metal layer and / or the second metal layer are preferably each connected to the carrier via a conductive contact. Due to the contacts 8 already integrated in the composite 1, individual contacting of the individual adapter elements 10 can advantageously be dispensed with. Furthermore, it is provided that the electrically conductive contacts 8 are dimensioned in such a way that they tear off when the adapter element 10 is removed from the composite 1 or from the carrier 5. As a result, it is possible to dispense with an additional work step during production, with which the electrically conductive contact 8 would have to be removed again. Preferably, predetermined breaking points 18 are provided in the composite, along which the adapter elements 10 are broken off when the coating process, in particular the sputtering process, has ended and the adapter element 10 is separated from the composite 1. The predetermined breaking point 18 is preferably implemented by laser treatment, for example by a laser scratch line in the ceramic of the intermediate layer which crosses the electrically conductive contacts. Furthermore, saw gaps 19 are provided between the adapter elements 10 which extend into the carrier 5. The individual adapter elements 19 can be separated from one another along these sawing gaps 19 in order to then serve to connect the laser diode 4 to the heat sink 7. The ratio of a depth A of the saw gap 19 in the carrier 5 to the thickness B of the carrier 5 in the region of the adapter element 10 is preferably a value between 0.6 and 0.9, preferably between 0.75 and 0.85 and particularly preferably essentially 0.8. This allows a simple separation of the adapter elements Realize 10 and at the same time ensure sufficient stability that holds the adapter elements 10 together during the sputtering process. Furthermore, it is provided that the carrier 5 has a frame element 20 which laterally adjoins the sequence of adapter elements 10 lined up next to one another and ends flush with the adapter elements 10 on one side. As a result, the adapter elements 10 are protected to the side by the frame elements 20.

In Figur 3 ist ein Verbund 1 aus mehreren Adapterelementen 10 gemäß einer beispielhaften Ausführungsform der vorliegenden Erfindung dargestellt. Insbesondere handelt es sich um eine Draufsicht auf den Verbund 1, in dem mehrere Adapterelemente 10 nebeneinander entlang einer Reihe angeordnet sind. Insbesondere erfolgt der Blick auf den Verbund 1 entlang einer Richtung, die parallel zu einer Stapelrichtung verläuft, entlang der die erste Metallschicht 11, die Zwischenschicht 13 und die zweite Metallschicht 12 übereinander geordnet sind, d. h. in Figur 3 ist die strukturierte erste Metallschicht 11 bzw. die zweite Metallschicht 12 zu sehen, wobei die Strukturierungen der ersten Metallschicht 11 bzw. der zweiten Metallschicht 12 unteranderem die Zuordnung der jeweiligen Abschnitte zum Adapterelement 10 bzw. zum Träger 5 festlegt. In den Bereichen, die in Folge der Strukturierung der ersten Metallschicht 11 bzw. der zweiten Metallschicht 12 freiliegen, d. h. ohne Metall sind, ist in der Draufsicht die Zwischenschicht 13 zu erkennen. Vorzugsweise verlaufen in diesen metallfreien Bereichen die Sollbruchstellen 18, entlang derer die Adapterelemente 10 untereinander bzw. vom Träger 5 getrennt werden können. Weiterhin ist es vorgesehen, dass das Adapterelement 10, insbesondere der Verbund 1, mehrere elektrisch leitende Kontakte 8 aufweist, die den Träger 5 mit dem Adapterelement 10 oder verschiedenen Teilen der ersten Metallschicht 11 bzw. der zweiten Metallschicht 12 des Adapterelement 10 verbindet, insbesondere jeweils verbindet.In Figure 3 shows a composite 1 of a plurality of adapter elements 10 according to an exemplary embodiment of the present invention. In particular, it is a plan view of the composite 1, in which several adapter elements 10 are arranged next to one another along a row. In particular, the view of the composite 1 takes place along a direction which runs parallel to a stacking direction, along which the first metal layer 11, the intermediate layer 13 and the second metal layer 12 are arranged one above the other, ie in FIG. the second metal layer 12 can be seen, the structuring of the first metal layer 11 and the second metal layer 12, among other things, defining the assignment of the respective sections to the adapter element 10 and to the carrier 5. In the areas that are exposed as a result of the structuring of the first metal layer 11 or the second metal layer 12, ie are without metal, the intermediate layer 13 can be seen in the plan view. The predetermined breaking points 18, along which the adapter elements 10 can be separated from one another or from the carrier 5, preferably run in these metal-free areas. Furthermore, it is provided that the adapter element 10, in particular the composite 1, has several electrically conductive contacts 8, which connect the carrier 5 to the adapter element 10 or various parts of the first metal layer 11 or the second metal layer 12 of the adapter element 10, in particular each connects.

Weiterhin ist es bevorzugt vorgesehen, dass die erste Metallschicht 11 oder die zweite Metallschicht 12 auf dem Verbund 1 derart strukturiert ist, dass ein elektrisch leitender Kontakt 8 zwischen der ersten Metallschicht 11 bzw. zweiten Metallschicht 12 im Bereich des Trägers 5 und der ersten Metallschicht 11 bzw. der zweiten Metallschicht 12 im Bereich des einzelnen Adapterelements 10 ausgebildet wird. Vorzugsweise ist der elektrisch leitende Kontakt 8 stegförmig ausgestaltet. Dabei verläuft der stegförmige, elektrisch leitende Kontakt 8 vorzugsweise senkrecht zum Verlauf der Sollbruchstelle 18, entlang der die Adapterelemente 10 vom Träger 5 getrennt werden. Insbesondere quert der elektrisch leitende Kontakt 5 die Sollbruchstelle 18. Es ist auch vorstellbar, dass der stegförmige, elektrisch leitende Kontakt 8 in einem Winkel zwischen 30° und 90°, bevorzugt zwischen 45° und 85° und besonders bevorzugt zwischen 60° und 80° geneigt ist gegenüber einer Längserstreckung der Sollbruchstelle 18.Furthermore, it is preferably provided that the first metal layer 11 or the second metal layer 12 is structured on the composite 1 in such a way that an electrically conductive contact 8 is between the first metal layer 11 or the second Metal layer 12 is formed in the area of the carrier 5 and the first metal layer 11 or the second metal layer 12 in the area of the individual adapter element 10. The electrically conductive contact 8 is preferably designed in the shape of a web. The web-shaped, electrically conductive contact 8 preferably runs perpendicular to the course of the predetermined breaking point 18, along which the adapter elements 10 are separated from the carrier 5. In particular, the electrically conductive contact 5 crosses the predetermined breaking point 18. It is also conceivable that the web-shaped, electrically conductive contact 8 is at an angle between 30 ° and 90 °, preferably between 45 ° and 85 ° and particularly preferably between 60 ° and 80 ° is inclined with respect to a longitudinal extension of the predetermined breaking point 18.

Weiterhin ist es vorgesehen, dass voneinander elektrisch isolierte Teilbereiche der ersten Metallschicht 11 bzw. zweiten Metallschicht 12 jeweils mit einem eigenen elektrisch leitenden Kontakt 8 mit dem Träger 5 verbunden sind, insbesondere mit der ersten Metallschicht 11 bzw. zweiten Metallschicht 12 des Trägers 5. Weiterhin ist es vorgesehen, dass entlang einer Richtung, die durch die Längserstreckung der Sollbruchstelle 18 zwischen den Adapterelementen 10 und dem Träger 5 festgelegt wird, eine Breite des stegartigen elektrisch leitenden Kontakts 8 schmaler ist als ein 0,1-faches, bevorzugt weniger als 0,05-faches und besonders bevorzugt weniger als 0,01-faches der in derselben Richtung bemessenen Breite des Adapterelements 10.Furthermore, it is provided that subregions of the first metal layer 11 or second metal layer 12 that are electrically isolated from one another are each connected to the carrier 5 by a separate electrically conductive contact 8, in particular to the first metal layer 11 or second metal layer 12 of the carrier 5 it is provided that along a direction which is determined by the longitudinal extension of the predetermined breaking point 18 between the adapter elements 10 and the carrier 5, a width of the web-like electrically conductive contact 8 is narrower than 0.1 times, preferably less than 0, 05 times and particularly preferably less than 0.01 times the width of the adapter element 10 measured in the same direction.

In Figur 4 sind zwei Schnittansichten durch den Verbund 1 aus Figur 3 dargestellt. Insbesondere zeigt die obere Schnittansicht einen Verbund 1 vor dem Vereinzeln der Adapterelemente 10. Beim Abbrechen wird hier mit einer Kraft F auf den Verbund 1 eingewirkt. In Folge des Bruchs kommt es auf der die Krafteinwirkung erfahrenden Seite gegenüberliegenden Seite des Verbunds 1 zu einer Materialanhäufung unterhalb der Sollbruchstelle 18. Diese Materialanhäufung bildet einen wulstartige Vorsprung 25 an der Außenseite des Verbunds 1 aus. Um eine solche ungewünschte Materialanhäufung mit einer entsprechenden Vorsprungsbildung entgegenzuwirken, ist es vorzugsweise vorgesehen, dass auf der der Sollbruchstelle 18 gegenüberliegenden Seite, beispielsweise mittels einer Säge, insbesondere einer "Wafersäge", mittels Ätzen oder mittels eines spanenden Vorgang, insbesondere eines Fräsens, eine Nut 26 in den Verbund 1 einzulassen. Insbesondere verläuft die Nut 25 in Stapelrichtung gesehen unterhalb der Sollbruchstelle 18, wobei die Sollbruchstelle besonders bevorzugt keilförmig in die Zwischenschicht 13 eingelassen ist. Vorzugsweise ist eine laterale Ausdehnung der Nut 26 breiter als eine laterale Ausdehnung des als Sollbruchstelle 18 dienenden Spalts.In Figure 4 are two sectional views through the composite 1 from Figure 3 shown. In particular, the upper sectional view shows a composite 1 before the adapter elements 10 are separated. When breaking off, a force F acts on the composite 1 here. As a result of the break, on the side of the composite 1 opposite the side experiencing the action of force, there is an accumulation of material below the predetermined breaking point 18. This accumulation of material forms a bead-like projection 25 on the outside of the composite 1. In order to counteract such an undesired accumulation of material with a corresponding projection formation, it is preferably provided that on the predetermined breaking point 18 opposite side, for example by means of a saw, in particular a "wafer saw", by means of etching or by means of a cutting process, in particular milling, to make a groove 26 in the composite 1. In particular, the groove 25 runs below the predetermined breaking point 18 as seen in the stacking direction, the predetermined breaking point particularly preferably being embedded in the intermediate layer 13 in a wedge shape. A lateral extension of the groove 26 is preferably wider than a lateral extension of the gap serving as a predetermined breaking point 18.

Bezugszeichenliste:List of reference symbols:

11
VerbundComposite
44th
LaserdiodeLaser diode
55
Trägercarrier
77th
KühlkörperHeat sink
88th
KontaktContact
1010
AdapterelementAdapter element
1111th
erste Metallschichtfirst metal layer
1212th
zweite Metallschichtsecond metal layer
1313th
ZwischenschichtIntermediate layer
1515th
DurchkontaktierungVia
1818th
SollbruchstellePredetermined breaking point
1919th
SägespaltSaw gap
2020th
RahmenelementFrame element
2525th
Vorsprunghead Start
2626th
NutGroove
AA.
Tiefedepth
BB.
Dickethickness
FF.
Kraftpower

Claims (11)

  1. A composite (1) of a plurality of adapter elements (10) suitable for connecting a device such as a laser diode (4) to a heat sink (7), comprising
    - a first metal layer (11), which, in the mounted state, faces the component (4), and a second metal layer (12), which, in the mounted state, faces the heat sink (7), and further characterized by
    - an intermediate layer (13) which is arranged between the first metal layer (11) and the second metal layer (12) and comprises ceramics, the first metal layer (11) and/or the second metal layer (12) being thicker than 40 µm, preferably thicker than 70 µm and particularly preferably thicker than 100 µm, wherein it is possible to separate the adapter elements (10) from a support (5) using a predetermined breaking point (18), and the adapter elements (10) comprising an electrically conductive contact (8) to the support (5) of the composite (1).
  2. The composite (1) according to claim 1, wherein the intermediate layer (13) is thinner than 400 µm, preferably thinner than 200 µm and particularly preferably thinner than 100 µm to matching the coefficients of expansion.
  3. The composite (1) according to one of the preceding claims, wherein a ratio between an added up thickness of a primary layer thickness of the first metal layer (11) and a primary layer thickness of the second metal layer (12) to the secondary layer thickness of the intermediate layer (13) assumes a value between 0.2 and 0.8, preferably between 0.25 and 0.65 and particularly preferably between 0.3 and 0.55.
  4. The composite (1) according to one of the preceding claims, wherein the electrically conductive contact (8) is configured such that it tears off when the predetermined breaking point is broken.
  5. The composite (1) according to one of the preceding claims, wherein the intermediate layer (13) may have an electrically conductive via (15).
  6. The composite (1) according to claim 5, wherein at least one web-shaped electrically conductive contact (8) extends between the support (5) and the adapter element (10).
  7. The composite (1) according to one of the preceding claims, wherein the electrically conductive contact (8) crosses a predetermined breaking point (18), especially a predetermined breaking point (18) between the adapter elements (10) and the support (5).
  8. The composite (1) according to one of the preceding claims, wherein the support (5) has a recess, especially in the form of a groove (26), on a side opposite the predetermined breaking point (18) to avoid material accumulation when breaking along a predetermined breaking point (18).
  9. A method for the production of a composite according to any one of claims 1 to 8, wherein the first metal layer (11) and/or the second metal layer (12) are attached to the intermediate layer (13) using a DCB process or an active soldering process.
  10. The process according to claim 9, wherein the adapter element (10) is coated using a sputtering process.
  11. The method according to claim 9 or 10, wherein the adapter element (10) is broken away from the composite (1) of adapter elements (10).
EP18769131.6A 2017-09-12 2018-09-07 Arrangement of several adapter elements and method for producing such a composite Active EP3682474B1 (en)

Applications Claiming Priority (2)

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DE102017121015.6A DE102017121015A1 (en) 2017-09-12 2017-09-12 Adapter element for connecting a component such as a laser diode to a heat sink, a system of a laser diode, a heat sink and an adapter element and method for producing an adapter element
PCT/EP2018/074207 WO2019052924A1 (en) 2017-09-12 2018-09-07 Adapter element for connecting a component, such as a laser diode, to a heat sink, a system comprising a laser diode, a heat sink and an adapter element and method for producing an adapter element

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JP (1) JP7034266B2 (en)
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DE102020111697A1 (en) 2020-04-29 2021-11-04 Rogers Germany Gmbh Carrier substrate and method for producing a carrier substrate

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US20200280168A1 (en) 2020-09-03
WO2019052924A1 (en) 2019-03-21
JP7034266B2 (en) 2022-03-11
DE202018006215U1 (en) 2019-08-19
DE102017121015A1 (en) 2019-03-14
CN111201598B (en) 2024-03-26
KR20200034754A (en) 2020-03-31
US11476640B2 (en) 2022-10-18
KR102365887B1 (en) 2022-02-23
EP3682474A1 (en) 2020-07-22
CN111201598A (en) 2020-05-26
JP2020533797A (en) 2020-11-19

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