EP3642868A4 - Doped diamond semiconductor and method of manufacture - Google Patents

Doped diamond semiconductor and method of manufacture Download PDF

Info

Publication number
EP3642868A4
EP3642868A4 EP18820671.8A EP18820671A EP3642868A4 EP 3642868 A4 EP3642868 A4 EP 3642868A4 EP 18820671 A EP18820671 A EP 18820671A EP 3642868 A4 EP3642868 A4 EP 3642868A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
doped diamond
diamond semiconductor
semiconductor
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18820671.8A
Other languages
German (de)
French (fr)
Other versions
EP3642868A1 (en
Inventor
Eric David BAUSWELL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adamantite Technologies LLC
Original Assignee
Adamantite Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/627,426 external-priority patent/US20180006121A1/en
Priority claimed from US15/836,570 external-priority patent/US20180114835A1/en
Application filed by Adamantite Technologies LLC filed Critical Adamantite Technologies LLC
Publication of EP3642868A1 publication Critical patent/EP3642868A1/en
Publication of EP3642868A4 publication Critical patent/EP3642868A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
EP18820671.8A 2017-06-19 2018-06-18 Doped diamond semiconductor and method of manufacture Pending EP3642868A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/627,426 US20180006121A1 (en) 2016-06-17 2017-06-19 Doped Diamond Semi-Conductor and Method of Manufacture
US15/836,570 US20180114835A1 (en) 2016-06-17 2017-12-08 Doped Diamond SemiConductor and Method of Manufacture
PCT/US2018/038099 WO2018236760A1 (en) 2017-06-19 2018-06-18 Doped diamond semiconductor and method of manufacture

Publications (2)

Publication Number Publication Date
EP3642868A1 EP3642868A1 (en) 2020-04-29
EP3642868A4 true EP3642868A4 (en) 2021-04-07

Family

ID=64737422

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18820671.8A Pending EP3642868A4 (en) 2017-06-19 2018-06-18 Doped diamond semiconductor and method of manufacture

Country Status (4)

Country Link
EP (1) EP3642868A4 (en)
KR (1) KR102638845B1 (en)
CN (1) CN110998796A (en)
WO (1) WO2018236760A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5633513A (en) * 1992-11-24 1997-05-27 Kabushiki Kaisha Kobe Seiko Sho Diamond film field effect transistor
US8939107B2 (en) * 2010-02-26 2015-01-27 Purdue Research Foundation Confined pulsed laser deposition method for depositing metastable thin film

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298106A (en) * 1991-07-08 1994-03-29 The United States Of America As Represented By The Secretary Of The Navy Method of doping single crystal diamond for electronic devices
JPH05175359A (en) * 1991-12-20 1993-07-13 Fujitsu Ltd Manufacture of diamond multilayer wiring substrate
JPH07115191A (en) * 1993-02-23 1995-05-02 Kobe Steel Ltd Diamond field effect transistor and its manufacture
JPH10261712A (en) * 1997-03-19 1998-09-29 Sanyo Electric Co Ltd Formation of conductive region and thin film element
US20060163584A1 (en) * 2005-01-26 2006-07-27 Robert Linares Boron-doped diamond semiconductor
JP2015516672A (en) * 2012-02-26 2015-06-11 ソレクセル、インコーポレイテッド System and method for laser splitting and equipment layer relocation
US9212546B2 (en) * 2012-04-11 2015-12-15 Baker Hughes Incorporated Apparatuses and methods for obtaining at-bit measurements for an earth-boring drilling tool
US9793473B2 (en) * 2013-09-05 2017-10-17 Hewlett Packard Enterprise Development Lp Memristor structures
RU2585311C1 (en) * 2014-12-11 2016-05-27 Российская Федерация, в лице Министерства промышленности и торговли Российской Федерации (Минпромторг России) Method of producing carbon films with boron-doped diamond
RU2597447C2 (en) * 2014-12-12 2016-09-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Laser method for production of functional coatings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5633513A (en) * 1992-11-24 1997-05-27 Kabushiki Kaisha Kobe Seiko Sho Diamond film field effect transistor
US8939107B2 (en) * 2010-02-26 2015-01-27 Purdue Research Foundation Confined pulsed laser deposition method for depositing metastable thin film

Also Published As

Publication number Publication date
KR102638845B1 (en) 2024-02-20
KR20200053464A (en) 2020-05-19
WO2018236760A1 (en) 2018-12-27
CN110998796A (en) 2020-04-10
EP3642868A1 (en) 2020-04-29

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