EP3642868A4 - Semi-conducteur au diamant dopé et procédé de fabrication - Google Patents
Semi-conducteur au diamant dopé et procédé de fabrication Download PDFInfo
- Publication number
- EP3642868A4 EP3642868A4 EP18820671.8A EP18820671A EP3642868A4 EP 3642868 A4 EP3642868 A4 EP 3642868A4 EP 18820671 A EP18820671 A EP 18820671A EP 3642868 A4 EP3642868 A4 EP 3642868A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- manufacture
- doped diamond
- diamond semiconductor
- semiconductor
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title 1
- 239000010432 diamond Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/08—Epitaxial-layer growth by condensing ionised vapours
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/627,426 US20180006121A1 (en) | 2016-06-17 | 2017-06-19 | Doped Diamond Semi-Conductor and Method of Manufacture |
US15/836,570 US20180114835A1 (en) | 2016-06-17 | 2017-12-08 | Doped Diamond SemiConductor and Method of Manufacture |
PCT/US2018/038099 WO2018236760A1 (fr) | 2017-06-19 | 2018-06-18 | Semi-conducteur au diamant dopé et procédé de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3642868A1 EP3642868A1 (fr) | 2020-04-29 |
EP3642868A4 true EP3642868A4 (fr) | 2021-04-07 |
Family
ID=64737422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18820671.8A Pending EP3642868A4 (fr) | 2017-06-19 | 2018-06-18 | Semi-conducteur au diamant dopé et procédé de fabrication |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3642868A4 (fr) |
KR (1) | KR102638845B1 (fr) |
CN (1) | CN110998796A (fr) |
WO (1) | WO2018236760A1 (fr) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5633513A (en) * | 1992-11-24 | 1997-05-27 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor |
US8939107B2 (en) * | 2010-02-26 | 2015-01-27 | Purdue Research Foundation | Confined pulsed laser deposition method for depositing metastable thin film |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5298106A (en) * | 1991-07-08 | 1994-03-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of doping single crystal diamond for electronic devices |
JPH05175359A (ja) * | 1991-12-20 | 1993-07-13 | Fujitsu Ltd | ダイヤモンド多層配線基板の製造方法 |
JPH07115191A (ja) * | 1993-02-23 | 1995-05-02 | Kobe Steel Ltd | ダイヤモンド電界効果トランジスタ及びその製造方法 |
JPH10261712A (ja) * | 1997-03-19 | 1998-09-29 | Sanyo Electric Co Ltd | 導電領域の形成方法及び薄膜素子 |
US20060163584A1 (en) * | 2005-01-26 | 2006-07-27 | Robert Linares | Boron-doped diamond semiconductor |
WO2013126927A2 (fr) * | 2012-02-26 | 2013-08-29 | Solexel, Inc. | Systèmes et procédés pour une division par laser et un transfert de couche de dispositif |
US9212546B2 (en) * | 2012-04-11 | 2015-12-15 | Baker Hughes Incorporated | Apparatuses and methods for obtaining at-bit measurements for an earth-boring drilling tool |
WO2015034494A1 (fr) * | 2013-09-05 | 2015-03-12 | Hewlett-Packard Development Company, L.P. | Structures de résistances à mémoire |
RU2585311C1 (ru) * | 2014-12-11 | 2016-05-27 | Российская Федерация, в лице Министерства промышленности и торговли Российской Федерации (Минпромторг России) | Способ изготовления углеродных пленок со структурой алмаза, легированных бором |
RU2597447C2 (ru) * | 2014-12-12 | 2016-09-10 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Лазерный способ получения функциональных покрытий |
-
2018
- 2018-06-18 WO PCT/US2018/038099 patent/WO2018236760A1/fr unknown
- 2018-06-18 CN CN201880053445.2A patent/CN110998796A/zh active Pending
- 2018-06-18 EP EP18820671.8A patent/EP3642868A4/fr active Pending
- 2018-06-18 KR KR1020207001880A patent/KR102638845B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5633513A (en) * | 1992-11-24 | 1997-05-27 | Kabushiki Kaisha Kobe Seiko Sho | Diamond film field effect transistor |
US8939107B2 (en) * | 2010-02-26 | 2015-01-27 | Purdue Research Foundation | Confined pulsed laser deposition method for depositing metastable thin film |
Also Published As
Publication number | Publication date |
---|---|
KR20200053464A (ko) | 2020-05-19 |
KR102638845B1 (ko) | 2024-02-20 |
EP3642868A1 (fr) | 2020-04-29 |
WO2018236760A1 (fr) | 2018-12-27 |
CN110998796A (zh) | 2020-04-10 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/20 20060101AFI20210301BHEP Ipc: C30B 23/00 20060101ALI20210301BHEP Ipc: C30B 23/06 20060101ALI20210301BHEP Ipc: C30B 29/04 20060101ALI20210301BHEP Ipc: C30B 23/08 20060101ALI20210301BHEP |
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