EP3563129A1 - Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisation - Google Patents
Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisationInfo
- Publication number
- EP3563129A1 EP3563129A1 EP17836034.3A EP17836034A EP3563129A1 EP 3563129 A1 EP3563129 A1 EP 3563129A1 EP 17836034 A EP17836034 A EP 17836034A EP 3563129 A1 EP3563129 A1 EP 3563129A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- ohm
- detectors
- elementary
- infrared radiation
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 27
- 230000008569 process Effects 0.000 title claims description 16
- 230000005670 electromagnetic radiation Effects 0.000 title description 3
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 68
- 239000011159 matrix material Substances 0.000 claims abstract description 31
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012528 membrane Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000003384 imaging method Methods 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims description 25
- 230000004913 activation Effects 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 description 42
- 239000010408 film Substances 0.000 description 41
- 239000010410 layer Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 11
- 239000010409 thin film Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003570 air Substances 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004861 thermometry Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000001275 scanning Auger electron spectroscopy Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000002089 crippling effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000009462 micro packaging Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
Definitions
- the invention relates to the field of infrared imaging. More particularly, the invention relates to the manufacture of electromagnetic radiation detectors including infrared integrating bolometric detectors. STATE OF THE ART
- infrared detectors In the field of infrared detectors, it is known to use devices arranged in matrix form and capable of operating at ambient temperature, that is to say not requiring cooling at very low temperature, unlike imaging devices called “quantum detectors", which require them to operate at a very low temperature, typically that of liquid nitrogen.
- Such uncooled detector generally associates:
- thermal insulation means of the detector so as to allow it to heat up under the action of infrared radiation
- thermometric means which, in the context of a bolometric detector, implement a resistive element formed from electrodes and a sensitive material element called "thermistor",
- thermometry means and means for reading the electrical signals supplied by the thermometry means.
- the means for absorbing infrared radiation and for thermometry are integrated in a membrane suspended by the thermal insulation means above a substrate, in which the reading means are disposed, and in particular, an integrated reading circuit ROIC. (for the English acronym “Readout Integrated Circuit”).
- ROIC integrated reading circuit
- the detectors are conventionally made in the form of a matrix of elementary detectors in one or two dimensions, said matrix being formed so-called monolithic, or carried on the substrate, the latter being generally realized in CMOS technology (English acronym for "Complementary Metal Oxide Semi-conductor”) on silicon, and in which are constituted sequential addressing means of the elementary detectors, and electrical excitation means and pre-processing of the electrical signals formed from these elementary detectors.
- CMOS technology International acronym for "Complementary Metal Oxide Semi-conductor”
- the assembly is placed in a hermetic enclosure, typically a very low pressure housing, so as to render completely negligible the thermal conductance of the surrounding gas.
- a hermetic enclosure typically a very low pressure housing
- the scene is projected through an optical system adapted to the matrix of elementary detectors, and clocked electrical stimuli are applied via the reading circuit to each of the detectors.
- elementary or at each row of such detectors, capable of producing an electrical signal constituting the image of the temperature reached by each of the elementary detectors.
- thermometry means typically consisting of a surface element defined in a thin film, as well as in the structure of each micro-detector (or pixel), in order to to transform any variation of temperature in variation of electric current which crosses it.
- electrical resistance of a micro-detector 3 ⁇ 4 is expressed as a function of the resistivity p of the thermistor material by the relation:
- A is the total area of the sensitive elementary point (detector pixel),
- ⁇ is the overall optical absorption efficiency of the bolometer
- TCR Temporal Coefficient of Resistance
- Rt h is the thermal resistance between the membrane and the substrate (i.e., holding arms),
- Pu is the incident radiative power resulting from the scene at temperature T1, integrated on the spectrum (typically 8-14 ⁇ , that is to say the far infrared band or LWIR for Anglo-Saxons) and in an angle solid characterized by the optical system implemented.
- P T2 is the equivalent of Pu for a scene temperature T2 greater than T1.
- Tint is the integration time of the current flowing in the micro detector, in a capacity Cint which characterizes the analog amplifier (or CTIA for "Trans Impedance Amplifier") of the reading circuit. Relationships (1) and (2) show that the response of each micro-detector is directly related to the intrinsic properties of the "thermistor” material, ie its p resistivity and its TCR. Note that these two parameters are interdependent.
- TCR-p pair adapted to the technological constraints related to the manufacturing and to the targeted performances. Maintaining these parameters throughout the technological integration is a key element in achieving performance and performance consistent with industry requirements.
- thermistor materials there is mainly amorphous silicon and vanadium oxides (VOx).
- VOx vanadium oxides
- the latter are known to generally have a very disordered or even amorphous structure (see, for example, Bryan D. Gauntt's thesis "The nano-composite nature of vanadium oxide thin films for use in Infrared Microbolometers” - May 2011).
- VOx vanadium oxides
- a TCR value greater than or equal to 2% is typically accessible if the resistivity of the VOx is above 0.1 ohm.cm measured at 30 ° C. For resistivities set below this threshold, the low value of the TCR no longer makes it possible to guarantee the characteristics of the detectors at a sufficient level.
- the suspended mass limits the speed of the detector.
- a thermistor with a thickness greater than 200 nanometers would not make it possible to obtain a thermal time constant of less than about 15 ms, the maximum typical of the domain.
- the value of the incident powers can be calculated according to Planck's law.
- the powers received for example, for scene temperatures of 20 ° C and 35 ° C, respectively, are:
- the analog amplifier must satisfy various constraints, namely a Tint value of 50 ⁇ 8 compatible with operation of the imager at 50 Hertz, in "Rolling shutter” mode, that is to say in sequential reading of the lines, and a relatively high Cint capacity, ie 6 pF to minimize dispersions and the electronic noise resulting from the integration of the current.
- the VOx vanadium oxide thin films are deposited on a substrate, typically by PVD (Physical Vapor Deposition) techniques.
- PVD Physical Vapor Deposition
- a vanadium target or a vanadium-containing compound is placed under vacuum, and bombarded by the atoms of an ionized neutral gas, typically argon or krypton.
- the microstructures are placed in a very low pressure atmosphere, typically close to 10 "3 mbar.
- an infrared transparent window typically made of silicon or germanium, is sealed on the top of a hollow housing, at the bottom of which the sensor chip is fixed beforehand, or directly on the chip itself. in the case of a collective process of the type "Wafer Level Packaging".
- the two parts are secured by means of a metal sealing joint (or solder) which is melted locally, and which provides a hermeticity compatible with the operation of the detector and sustainable in time.
- a metal sealing joint or solder
- the choice of a typical eutectic alloy AuSn (80/20) as a metal seal makes it possible to limit these thermal stresses by virtue of a low melting point, in this case around 280.degree.
- a seal made at a temperature close to 300 ° C thus provides a reliable seal, capable of ensuring sufficient robustness to support subsequent processes of integration in a more complex system.
- the activation of the getter is dependent on the materials that constitute it. It usually occurs at relatively high temperatures. However, optimized specific alloys make it possible to lower the activation threshold of such getter materials around 300 ° C, while guaranteeing a good capacity for pumping or trapping gases (example: the product "Pagewafer” from the company SAES ).
- the steps of formation of the seal and activation of the getter are in general, and for economic reasons, treated simultaneously during a single thermal cycle which subjects, consequently, the detector chip to a temperature greater than or equal to 300 ° C.
- WO2016 / 09126 describes such a method. It is generally necessary to maintain this temperature for at least 10 minutes, and possibly up to 90 minutes for example if the activation of the getter requires it.
- This procedure defines an order of magnitude of minimum thermal budget, compatible with industrial constraints, while ensuring excellent stability of the vacuum level throughout the life of the detector.
- the pixels of a matrix detector are "read" by a calibrated electronic reading device to deliver a signal for each pixel, and which derives directly from the resistance value of the latter.
- This electronic reading device can read resistance values in a range determined by its electrical dynamics, defined by the minimum and maximum values of output voltage of an analog amplifier.
- thermal sealing cycles are preferably short and operated in high vacuum furnaces, a condition that penalizes thermal homogenization and heat transfer from the furnace to the rooms.
- the invention consists first of all in implementing as a thermistor material a vanadium oxide film VOx of resistivity much greater than that described in the prior art, and typically between 6 and 50 ohm. cm, and advantageously between 6 and 24 ohm. cm, measured at 30 ° C.
- the vanadium target for example by ion beam sputtering (IBS) of a vanadium target, a vanadium oxide film VOx, under a controlled partial pressure of 0 2 , without no heat input during the growth of the oxide layer on a monocrystalline silicon wafer substrate, varying x between about 1.8 and 2.3, which corresponds to resistivity values of 6 ohm.cm and 50 ohm.cm respectively measured at 30 ° C (the correspondence between the resistivity and a composition x is established in particular in the aforementioned Bryan D. GAUNTT thesis).
- IBS ion beam sputtering
- the Applicants have been able to show that in the temperature range of integration, and thus closure (sealing) of the housing and activation of the getter, that is to say typically comprised between 280 and 320 ° C, the evolution of the resistivity of the thermistor material used remains very limited, unlike the materials used in the prior art, this stability resulting in a satisfactory uniformity of the signal resulting in the circuit reading.
- the invention aims at an infrared radiation detector comprising:
- each of the elementary bolometric detectors being constituted by a bolo-metric membrane comprising a film made of amorphous VOx vanadium oxide, whose resistivity is between 6 ohm. cm and 50 ohm. cm, and advantageously between 6 ohm.cm and 24 ohm.cm, said membrane being suspended above a substrate incorporating a circuit for reading the signal generated by said elementary detectors, and for sequential addressing of the elementary detectors,
- a hermetic cavity in which is housed said matrix and said getter cavity whose upper cover comprises a window transparent to infrared radiation, said cover being sealed on a chip supporting the matrix of elementary detectors or on a housing at the bottom of which the chip supporting the matrix of elementary detectors has been fixed, cavity in which there is a vacuum or a reduced pressure.
- the invention also relates to a method for producing such an infrared radiation detector.
- This process essentially consists in operating at the same time the sealing of the top cover of the casing, after placement of the elementary detectors within it, the thermistor material of which consists of a VOx vanadium oxide film whose resistivity is between 6 ohm . cm and 50 ohm. cm, and advantageously between 6 ohm.cm and 24 ohm.cm measured at 30 ° C and the activation of the getter at a temperature between 280 ° C and 320 ° C
- the film made of vanadium oxide VOx entering the constitution of the bolo-metric membrane has a resistivity of between 6 ohm. cm and 9 ohm.cm measured at 30 ° C, and the sealing of the upper cover of the cavity on the latter, after placement of the elementary detectors and the getter therein, is carried out at a temperature between 280 ° C and 300 ° C for a period of between 10 and 90 minutes.
- the film made of vanadium oxide VOx entering the constitution of the bolometric membrane has a resistivity of between 9 ohm.cm and 24 ohm.cm measured at 30 ° C, and the sealing of the upper cover of the cavity on the latter, after placement of the elementary detectors and the getter within it, is carried out at a temperature between 280 ° C and 320 ° C for a period of between 10 and 90 minutes.
- Figure 1 is a schematic representation of a bolometric pixel or elementary bolometric detector.
- FIG. 2 is a schematic representation illustrating the principle of producing a vanadium oxide film by IBS (for the acronym "Ion Beam Sputtering") which constitutes the preferred technique of the state of the art. .
- FIG. 3 shows two histograms representing the dispersion of the output signal of a matrix detector of infrared radiation, respectively:
- FIGS. 4 and 5 are graphs representative of the variation of the resistivity of vanadium oxide films VOx, for different intrinsic resistivities measured at 30.degree. C., as a function of the annealing temperature, respectively for annealing times of 90.degree. and 10 minutes.
- an elementary bolometric detector is basically constituted of a membrane (1) suspended via "arm" of thermal insulation (2) and pillars (3), providing the electrical connection with the substrate (4).
- This membrane (1) comprises a thin film of thermistor material (5) over most of its surface, oriented vis-à-vis a window transparent to infrared radiation (and typically silicon or germanium).
- a reflective metal film (6) is affixed under the suspended membrane and at an adequate distance therefrom, to form a resonant cavity and thus optimize the absorption of the infrared radiation.
- the thermistor material (5) consists of a thin film of vanadium oxide VOx, with a typical thickness of between 20 and 200 nanometers, and whose resistivity is between 6 ohm. cm and 50 ohm. cm. These resistivity values typically correspond to a value of x of between 1.8 and 2.3, as measured by the RBS technique (for the acronym Rutherford Backscattering Spectroscopy).
- This vanadium oxide thin film VOx is produced by deposition by IBS (for the acronym "Ion Beam Sputtering") on a substrate at room temperature in a reactor in the presence of oxygen, the partial pressure of which is between 3 x 10 ⁇ 5 Torr and 1 x 10 "4 Torr.
- FIG. 2 Such a reactor is illustrated in FIG. 2.
- This reactor (10) provided with a pumping system (11), comprises a support (12) receiving a target (13) of pure or almost pure vanadium.
- This target is bombarded by an ionized krypton beam emitted by a barrel (14) known per se.
- krypton is not limiting, any other rare gas can be used.
- the vanadium atoms ejected from the target as a result of this ion bombardment are more or less oxidized by the oxygen (15) introduced into the reactor.
- the oxygen partial pressure present in the reactor enclosure is controlled by means of a control loop so as to set the final magnitude x to the desired value.
- These atomized vanadium atoms oxidize to form on a substrate (16) a VOx layer whose resistivity is related to the proportion x of atomic oxygen.
- the substrate (16) is maintained at a temperature close to ambient during deposition by a cooling system (not shown) using a coolant.
- the selected substrate is composed of a SiNx silicon nitride film (or even SiOx silicon oxide) deposited on a slice 200 millimeters of monocrystalline silicon. This allows excellent electrical insulation between the VOx film and the silicon substrate.
- Van der Pauw type patterns
- the assembly is then encapsulated by a SiNx silicon nitride layer made by PECVD (Plasma-Enhanced Chemical Vapor Deposition), that is to say by plasma-assisted chemical vapor deposition. at low temperature, ie 280 ° C in order to preserve the characteristics of the VOx material.
- PECVD Plasma-assisted Chemical Vapor Deposition
- This encapsulation is carried out so as to completely cover the VOx patterns, so as to isolate the VOx material from any chemical interaction with the ambient atmosphere during the annealing tests.
- the patterns are then polarized through the metal electrodes.
- the square resistance of the VOx film is then determined by the Van der Pauw method.
- the film thickness of VOx is determined by ellipsometry on dedicated and neighboring patterns.
- Samples taken from these slices were then annealed under a purge of nitrogen and at different temperatures, ranging between 240 ° C and 330 ° C to evaluate their thermal stability, or in other words their robustness vis-à-vis a thermal stress.
- the annealing time was set at 90 minutes.
- the initial resistivity film of 6.3 ohm.cm is stable up to 300 ° C, then its resistivity suddenly drop.
- the films of initial resistivity of 9.3, 20 and 24 ohm. cm have only a very small evolution in terms of resistivity up to 310 ° C, said resistivity collapsing only from 320 ° C.
- the stability threshold of the material therefore appears to be related to its composition and its intrinsic resistivity; the materials with the highest resistivities being the most stable.
- Such measurements have also been made on identical samples, but for short-duration anneals, typically 10 minutes, corresponding to a realistic minimum for a vacuum sealing process.
- the initial resistivity film of 0.5 ohm.cm did not support annealing at 280 ° C despite a reduced annealing time of 10 minutes. This observation implies the incompatibility of this representative material of the state of the art with the process of vacuum sealing which is discussed here.
- the initial resistivity film of 6.3 ohm.cm retains stable characteristics up to at least 320 ° C for this brief anneal (10 minutes).
- the initial resistivity film of 20 ohm. cm supports a 10 minutes annealing up to 330 ° C.
- Ellipsometry measurements interpreted by multilayer models that is to say which consider, at least, the film as being composed of two layers, one integrates, that is to say constituted 100% VOx and the other consisting of 50% VOx and 50% air (according to the method "Bruggeman effective medium approximation") allow to determine the thickness of this "roughness layer".
- the thickness of this roughness layer remains less than 5 nanometers for a VOx film of resistivity 10 ohm. cm, but on the other hand exceeds 10 nanometers for a film VOx resistivity 1 ohm.cm.
- This growth is to the detriment of the integrated VOx layer. It has been shown (for example in the two publications mentioned above) that this surface layer has a higher resistivity than the integral film, which necessarily modifies the square resistance of the films over time.
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1663552A FR3061549B1 (fr) | 2016-12-30 | 2016-12-30 | Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisation |
PCT/EP2017/084824 WO2018122382A1 (fr) | 2016-12-30 | 2017-12-29 | Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisation |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3563129A1 true EP3563129A1 (fr) | 2019-11-06 |
EP3563129B1 EP3563129B1 (fr) | 2022-09-07 |
Family
ID=59381316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17836034.3A Active EP3563129B1 (fr) | 2016-12-30 | 2017-12-29 | Detecteur de rayonnement electromagnetique et notamment de rayonnement infrarouge et procede pour sa realisation |
Country Status (8)
Country | Link |
---|---|
US (1) | US11359971B2 (fr) |
EP (1) | EP3563129B1 (fr) |
JP (1) | JP7023964B2 (fr) |
KR (1) | KR102493247B1 (fr) |
CN (1) | CN110100160A (fr) |
CA (1) | CA3046439A1 (fr) |
FR (1) | FR3061549B1 (fr) |
WO (1) | WO2018122382A1 (fr) |
Families Citing this family (3)
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FR3087886B1 (fr) * | 2018-10-24 | 2020-10-09 | Commissariat Energie Atomique | Procede de fabrication d'un microbolometre a materiau thermistance a base d'oxyde de vanadium presentant des performances ameliorees |
FR3125585B1 (fr) | 2021-07-22 | 2023-08-04 | Lynred | Micro-bolometre d’imagerie infrarouge |
FR3133447B1 (fr) | 2022-03-11 | 2024-04-12 | Lynred | Micro-bolometre d’imagerie infrarouge |
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US5450053A (en) | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
JP2786151B2 (ja) * | 1996-03-27 | 1998-08-13 | 防衛庁技術研究本部長 | 酸化バナジウム薄膜及びそれを用いたボロメータ型赤外線センサ |
US6322670B2 (en) | 1996-12-31 | 2001-11-27 | Honeywell International Inc. | Flexible high performance microbolometer detector material fabricated via controlled ion beam sputter deposition process |
US5900799A (en) * | 1997-10-03 | 1999-05-04 | Mcdonnell Douglas Corporation | High responsivity thermochromic infrared detector |
US6953932B2 (en) * | 1999-10-07 | 2005-10-11 | Infrared Solutions, Inc. | Microbolometer focal plane array with temperature compensated bias |
US7364932B2 (en) * | 2002-12-27 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method of manufacturing the same |
WO2005015637A1 (fr) * | 2003-08-08 | 2005-02-17 | Matsushita Electric Industrial Co., Ltd. | Dispositif electronique et son procede de fabrication |
FR2877492B1 (fr) * | 2004-10-28 | 2006-12-08 | Commissariat Energie Atomique | Detecteur bolometrique a isolation thermique par constriction et dispositif de detection infrarouge mettant en oeuvre un tel detecteur bolometrique |
US8153980B1 (en) * | 2006-11-30 | 2012-04-10 | L-3 Communications Corp. | Color correction for radiation detectors |
US8228159B1 (en) * | 2007-10-19 | 2012-07-24 | University Of Central Florida Research Foundation, Inc. | Nanocomposite semiconducting material with reduced resistivity |
WO2009131674A2 (fr) * | 2008-04-21 | 2009-10-29 | Research Foundation Of State University Of New York | Capteur bolométrique ayant un coefficient de température de résistivité (tcr) élevé et une faible résistivité réglable |
JP4915677B2 (ja) * | 2008-05-27 | 2012-04-11 | パナソニック株式会社 | センサ装置の製造方法 |
US8329002B1 (en) * | 2009-03-10 | 2012-12-11 | 4Wave, Inc. | Thin films and methods and machines for forming the thin films |
EP2264765A1 (fr) * | 2009-06-19 | 2010-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Boîtier pour dispositif micro à rayonnement infrarouge et procédé pour fabriquer ledit boîtier |
WO2011027774A1 (fr) * | 2009-09-03 | 2011-03-10 | 独立行政法人産業技術総合研究所 | Film de résistance pour bolomètre |
US20130334635A1 (en) * | 2012-06-15 | 2013-12-19 | Raytheon Company | Pixel structure with reduced vacuum requirements |
US20160097681A1 (en) * | 2013-03-14 | 2016-04-07 | Qualcomm Mems Technologies, Inc. | Microbolometer supported by glass substrate |
FR3023974B1 (fr) * | 2014-07-18 | 2016-07-22 | Ulis | Procede de fabrication d'un dispositif comprenant un boitier hermetique sous vide et un getter |
CN106414309B (zh) * | 2014-08-11 | 2020-02-28 | 雷声公司 | 具有应力减小层的气密性密封封装 |
US9570321B1 (en) * | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
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2016
- 2016-12-30 FR FR1663552A patent/FR3061549B1/fr active Active
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2017
- 2017-12-29 CA CA3046439A patent/CA3046439A1/fr active Pending
- 2017-12-29 JP JP2019534962A patent/JP7023964B2/ja active Active
- 2017-12-29 KR KR1020197017989A patent/KR102493247B1/ko active IP Right Grant
- 2017-12-29 EP EP17836034.3A patent/EP3563129B1/fr active Active
- 2017-12-29 US US16/468,537 patent/US11359971B2/en active Active
- 2017-12-29 WO PCT/EP2017/084824 patent/WO2018122382A1/fr active Search and Examination
- 2017-12-29 CN CN201780079890.1A patent/CN110100160A/zh active Pending
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Publication number | Publication date |
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CN110100160A (zh) | 2019-08-06 |
KR102493247B1 (ko) | 2023-01-30 |
KR20190102189A (ko) | 2019-09-03 |
FR3061549B1 (fr) | 2020-10-02 |
JP7023964B2 (ja) | 2022-02-22 |
US11359971B2 (en) | 2022-06-14 |
US20200088585A1 (en) | 2020-03-19 |
FR3061549A1 (fr) | 2018-07-06 |
JP2020507237A (ja) | 2020-03-05 |
EP3563129B1 (fr) | 2022-09-07 |
CA3046439A1 (fr) | 2018-07-05 |
WO2018122382A1 (fr) | 2018-07-05 |
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