EP3402642B1 - Verfahren und system zum schneiden eines werkstückes aus einem halbleitermaterial oder keramik mit einem schneiddraht und schleifpartikeln - Google Patents

Verfahren und system zum schneiden eines werkstückes aus einem halbleitermaterial oder keramik mit einem schneiddraht und schleifpartikeln Download PDF

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EP3402642B1
EP3402642B1 EP17704395.7A EP17704395A EP3402642B1 EP 3402642 B1 EP3402642 B1 EP 3402642B1 EP 17704395 A EP17704395 A EP 17704395A EP 3402642 B1 EP3402642 B1 EP 3402642B1
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Prior art keywords
wire
piece
cutting
cut
damping layer
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English (en)
French (fr)
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EP3402642A1 (de
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Jean-Daniel PENOT
Nastasja GRILLET
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Definitions

  • the invention relates to a method and a system for wire cutting a piece of semiconductor material (for example silicon, germanium, or a III-V or II-VI semiconductor material) or else of ceramic (for example sapphire, SiC), respectively according to the preambles of claims 1 and 8.
  • semiconductor material for example silicon, germanium, or a III-V or II-VI semiconductor material
  • ceramic for example sapphire, SiC
  • Wire cutting is used in many fields, in particular for slicing fragile and very hard materials such as semiconductor materials (used in the fields of microelectronics, optoelectronics or photovoltaics) or ceramics, or for cutting stones, for example marble rocks.
  • wire cutting of a material it is known to use a wire which is wound multiple times (hundreds, even thousands of times) around several wire guides, typically between two and four wire guides. There is thus obtained, between the wire guides, a "sheet of wires", or “sheet”, formed by a certain number of strands of the same cutting wire, which make it possible to cut the part into several slices.
  • the wire guides are rotatable and cause the wire to rotate during cutting.
  • Guide grooves are etched in the wire guides in order to guarantee a predefined spacing between the “wires” of the web (that is to say between the strands of the cutting wire), which determines the thickness of the slices to be cut.
  • Wire cutting using a web is widely used in fields making use of semiconductor materials, in particular in the field of photovoltaics, to manufacture wafers or wafers of semiconductor material, for example made of silicon.
  • Wire cutting requires the use of an abrasive element intended to create chips of material by abrasion during cutting. There are two techniques of wire cutting, depending on whether the abrasive element is free or linked to the wire.
  • the first cutting technique uses abrasive particles or abrasive grains, for example made of silicon carbide (SiC), which are integrated into a solution such as polyethylene glycol (PEG) forming a cutting liquid. or "slurry".
  • This abrasive liquid mixture is poured onto a wire, for example a steel wire, and envelops the latter with a liquid film containing abrasive particles. The passage of the wire surrounded by this abrasive film in a material to be cut causes the material to be cut.
  • abrasive bonded uses a wire on the surface of which abrasive particles, generally diamond or silicon carbide, are fixed. This type of cutting is commonly called “diamond wire cutting”.
  • the arrow F1 indicates the direction of cutting.
  • the wire 1 is driven in a translational movement in the direction x at a speed of the order of 20 m / s.
  • this movement is preferably oscillating: it alternates a first outward movement (from left to right on the figure 1 ) and a second return movement (from right to left on the figure 1 ), each movement typically having a duration of around thirty seconds.
  • This oscillating regime including back and forth thread, is commonly called “ back and forth ". It is represented by the double arrow F2 on the figure 1 .
  • the wire can be animated with a scrolling movement in one direction in the direction x. One-way scrolling is used more for slurry cutting.
  • the mechanical strength of a wafer 6, or wafer can be characterized by a so-called "four point" bending test.
  • this test uses for example four parallel loading bars including two upper bars 7A, 7B (that is to say placed above the wafer 6 to be tested) mobile and two lower bars 8A, 8B (that is that is to say placed below the plate 6 to be tested) fixed, the spacing between the upper bars 7A, 7B being less than that between the lower bars 8A, 8B.
  • the two upper bars 7A, 7B descend at a constant speed so as to cause the plate 6 to bend, the mechanical stress applied increasing until leading to a rupture of the plate 6. This rupture is triggered in the area 60 of the wafer 6 which undergoes the strongest mechanical stress, constituted by the central strip located between the two upper bars 7A, 7B.
  • the plate 6 can be arranged in two different configurations during the bending test. In the first configuration, as shown in the figure 3A , the loading bars are parallel to the x direction of the wire during cutting. In the second configuration, as shown in the figure 3B , the loading bars are perpendicular to the x direction of the wire during cutting.
  • the four-point bending test is passed to a statistical batch of plates, containing at least twenty plates. Tests were carried out according to the first configuration with a first batch of platelets and according to the second configuration with a second batch of platelets. The figure 4 shows the results of these tests and represents the percentage of fractured platelets in the batch, on the ordinate, as a function of the mechanical stress at break applied, on the abscissa. It is noted that the wafers tested by bending tests according to the first configuration, represented by the curve C1, have a lower mechanical resistance than those tested by bending tests according to the second configuration, represented by the curve C2. In other words, the plates applied during the bending tests parallel to the direction F2 of the cutting wire are less robust than those used during bending tests perpendicular to the direction F2 of the cutting wire.
  • a known solution consists in subjecting the wafers to a chemical etching attack with the aim of reducing or to remove all or part of the surface defects of the wafers.
  • This solution has the disadvantage of consuming material during the chemical attack.
  • the wafers remain fragile during the handling operations carried out between the end of the cutting and the chemical etching operation.
  • Another known solution consists in reducing the size of the diamonds of the diamond cutting wire.
  • this solution only slightly improves the mechanical resistance of the inserts and significantly reduces the cutting speed.
  • the present invention improves the situation.
  • the invention relates to a process for slicing a piece of semiconductor material or ceramic, using a cutting wire and abrasive particles, in which the wire is driven in translation in at at least one direction and, during its translational movement, it enters the workpiece to be cut by a penetration face of said workpiece, and there is a damping layer facing said penetration face of the workpiece to be cut in such a way so that, before entering the part, the wire passes through the damping layer, where according to the invention the damping layer covers the penetrating face.
  • the wire being driven in translation in an alternating back-and-forth movement and penetrating into the part to be cut alternately by two opposite penetration faces, there are two damping layers opposite the two faces of penetration respectively.
  • the mechanical weakness of the cut slices in particular with a diamond wire, or with a bonded abrasive, carrying abrasive particles (or abrasive grains) on its surface, is greatly reduced.
  • This has the effect of attenuating the deteriorating effect of the abrasive particles when the wire enters the part to be cut, inside the cutting groove, by a penetration face of the latter.
  • the damping layer is spaced from the penetration face by a distance less than or equal to 2 cm, advantageously less than or equal to 1 cm, and preferably less than or equal to 0.5 cm.
  • the damping layer has a thickness greater than three times the average diameter of the abrasive particles, advantageously greater than five times the average diameter of the abrasive particles.
  • the thickness of the damping layer can also be less than 2 cm, advantageously less than 1 cm, and preferably less than 0.5 cm.
  • the damping layer can be made of at least one of the materials of the group comprising polymers having a hardness greater than 90 MPa and a modulus of elasticity greater than 2 GPa, in particular hardened epoxy resins and PMMA, materials semiconductors, advantageously silicon, ceramics having a hardness less than 8 on the Mohs scale, in particular a silica.
  • the cushioning layer can be a flat plate.
  • the damping layer is a plate whose shape is adapted to match that of the penetrating face.
  • the damping layer is fixed to the penetration face of the part, for example by bonding by means an adhesive layer having a thickness which is advantageously less than or equal to 20 ⁇ m.
  • the part to be cut being integral with a cutting table by means of an assembly element
  • the damping layer is fixed either to the cutting table or to the assembly element.
  • the damping layer can be deposited on the penetration face of the part, by a layer deposition technique, in particular by sputtering or by another deposition treatment.
  • the at least one cushioning layer preferably two cushioning layers, can extend over at least 40%, or even at least 60%, or even at least 80%, even over 100%, or even over 100% of the height of the part to be cut, this height being measured perpendicular or substantially perpendicular to the cutting wire.
  • the invention also relates to a system for slicing a piece of semiconductor material or ceramic using a cutting wire and abrasive particles, comprising a device for driving the wire in translation in the at least one direction, the wire penetrating into the workpiece to be cut by at least one penetration face of said workpiece during its movement, and comprising at least one damping layer disposed opposite said penetration face of the workpiece to be cut such that, before entering the part, the wire passes through the damping layer, where according to the invention the damping layer covers the penetrating face.
  • a three-dimensional orthogonal coordinate system is represented on the figures 1 , 5 , 6 and 8 , the z axis corresponding to the vertical.
  • the invention relates to the cutting into slices of a piece 2 of fragile (that is to say macroscopically elastic until rupture) and hard (that is to say a hardness greater than or equal to 5) material.
  • hard that is to say a hardness greater than or equal to 5
  • semiconductor material for example in silicon, germanium, III-V semiconductor, II-VI semiconductor or other
  • ceramic for example in sapphire, SiC or other
  • a cutting wire and abrasive particles can in particular be used for the manufacture of wafers of semiconductor material, for example silicon.
  • the piece to be cut 2 is a silicon brick, of parallelepiped shape, intended to be cut into slices (or wafers or wafers).
  • the connecting element 3, or "beam”, here has the shape of a beam. It is a sacrificial element intended to be at least partially cut during the cutting into slices of part 2. It can be is in hard polymer, for example of the Epoxy family, or in any other suitable material (ceramic , graphite). It is fixed to the cutting table 4 by means of a hanging device. The piece to be cut 2 is fixed to the assembly element 3, for example by gluing, by means of a bonding or interface layer 10 in glue. The part 2 can be secured to the assembly element 3 by all or part of one of its faces. On the example of the figure 5 , the part 2 is glued to the assembly element 3 over the entire surface of its face 20C, parallel to the plane (x, y). As a variant, the assembly element 3 could be narrower than the part 2 in the direction x.
  • the assembly comprising the three integral parts, namely table 4, the element 3 and the part to be cut 2, constitutes a first entity, or a first, kinematic sub-assembly.
  • the cutting wire 1 is here a bonded abrasive wire, carrying abrasive particles fixed to its surface.
  • the wire is for example steel.
  • the particles abrasives are here in diamond.
  • Wire 1 constitutes a second kinematic entity (or kinematic sub-assembly).
  • the wire drive and guide device comprises in a known manner several wire guides, for example three wire guides 12A-12C.
  • the wire 1 is here wound multiple times (hundreds, even thousands of times) around these wire guides 12A-12C and thus forms a "sheet of wires", or “sheet”, formed by a number of strands of the same cutting wire 1.
  • This sheet allows the piece 2 to be cut simultaneously into a large number of slices.
  • the wire guides are rotary and cause the web of wires (or strands of wire) 1 to rotate during cutting. They are adapted to animate the wire 1 of an oscillating movement comprising back and forth movements, as represented by the arrow F2. Guide grooves are etched in the wire guides in order to guarantee a predefined spacing between the strands of wire of the sheet, which determines the thickness of the slices to be cut.
  • the second displacement or drive device (not shown) is intended to drive in relative translation the two kinematic entities with respect to each other.
  • the second displacement device is arranged to move the assembly (or first kinematic entity) of the table 4, of the element 3 and of the part 2 in a translational movement in the direction z, down on the figure 8 , as shown by arrow F3, the wire 1 (or second kinematic entity) being concomitantly maintained at the same height along z.
  • the direction of translation F3 is opposite to the direction of cutting F1.
  • a relative translational movement of the piece to be cut 2 and of the cutting wire 1, in the direction z allows the wire 1 to pass through the part 2 while sinking therein and to cut it in the plane (z, x).
  • the assembly of the table 4, of the element 3 and of the part 2 (or first kinematic entity) is kept fixed (at the same height along z) and the second drive device is arranged to drive the wire 1 (or second kinematic entity) in translation in the direction z in the direction of the cut F1.
  • the two damping layers 9A, 9B are intended to attenuate the damaging effect of the diamond wire on the two opposite edges of the cut edges by which the wire 1 enters the part 2, inside the cut groove, respectively each forward movement and each return movement.
  • the inventors have discovered that the reduction in the mechanical resistance of the wafers cut by a diamond wire originates from damage at these two opposite edges of the wafer or cut wafer, and not from surface defects thereof. .
  • This damage is caused by the diamond wire, during its penetration inside the cutting groove by the two opposite faces 20A and 20B, called “penetration faces", of the part 2, respectively with each forward movement and with each wire return movement 1.
  • the damping layers 9A, 9B are arranged, arranged, facing these opposite penetration faces 20A, 20B of the workpiece 2 so that, before entering the workpiece 2 by a penetration face 20A (or 20B), the wire 1 passes through the corresponding damping layer 9A (or 9B), at each forward movement and at each return movement of the wire 1, during its oscillating movement represented by the arrow F2.
  • the arrangement of the damping layers 9A, 9B facing the penetration faces 20A, 20B allows the wire 1, driven here in a back-and-forth movement in translation, to pass through a damping layer 9A (or 9B) before entering the workpiece 2 by the penetration face 20A (respectively 20B).
  • the two damping layers 9A, 9B serve to mitigate the deteriorating or damaging effects of the diamond wire 1 when it enters the part 2 by one or the other of the two penetration faces 20A, 20B.
  • each damping layer 9A, 9B consists of a flat plate. This has the shape of a flat parallelepiped whose dimensions along z and y are identical or substantially identical to the corresponding dimensions, along z and y, of the corresponding penetration face 20A, 20B (that is to say arranged opposite).
  • the damping layer 9A (9B) thus covers the whole of the corresponding penetration face 20A (20B).
  • the thickness “e” of the damping layer 9A (9B), in the direction x, must be sufficient to absorb the impact energy between the abrasive particles (or abrasive grains) integral with the wire 1 and the cut piece 2 , when the wire 1, driven by the oscillating movement F2 along x, enters the part 2 via the face 20A (respectively 20B). Thanks to this, it avoids degrading the edges in the z direction of the slices cut from the part 2.
  • the thickness of each damping layer 9A, 9B is greater than three times the average diameter of the abrasive particles (or abrasive grains) of wire 1, preferably greater than five times the average diameter of the abrasive particles of wire 1.
  • This average diameter is generally indicated by the manufacturer of the wire.
  • the average size, or average diameter, of the abrasive particles is 10 ⁇ m.
  • the minimum thickness e min of the damping layers 9A, 9B is therefore in this case equal to 30 ⁇ m, preferably 50 ⁇ m.
  • the thickness e of the damping layers 9A (9B) must also not be too great in order to avoid certain drawbacks such as fouling, overheating or wear of the wire.
  • the maximum thickness e max of the damping layers 9A, 9B is therefore advantageously equal to 2 cm, advantageously still equal to 1 cm, preferably equal to 0.5 cm.
  • the damping layers 9A, 9B cover the penetration faces 20A and 20B to be protected from the part 2.
  • the damping layers 9A, 9B are joined, pressed against the penetration faces 20A, 20B respectively and are fixed thereto, for example by gluing by means of a layer of glue 11A, 11B.
  • the thickness of this adhesive layer 11A, 11B is advantageously less than or equal to 20 ⁇ m.
  • the glue used here is analogous to that used for gluing the piece to be cut 2 to the assembly element 3.
  • a first alternative embodiment, represented on the figure 7A differs from the embodiment of the figure 5 by the fact that the damping layers 9A, 9B covering the penetration faces to be protected 20A, 20B of the part 2 are fixed to the assembly element 3, for example by gluing. More specifically, a peripheral edge of one of the faces of the damping layer 9A (or 9B) is fixed to a side opposite the assembly element 3.
  • a second alternative embodiment, shown on the figure 7D differs from the embodiment of the figure 5 by the fact that the damping layers 9A, 9B covering the penetration faces to be protected 20A, 20B of the part 2 are fixed to the cutting table 4, for example by gluing. More precisely, each damping element 9A (or 9B) is fixed by its edge to the face of the table 4 supporting the assembly element 3.
  • the example outside the scope of the invention of the figure 6 differs from that of the figure 5 essentially by the fact that the damping layers 9A, 9B are not joined to the faces 20A and 20B of the part 2, but are slightly spaced therefrom by a distance d. So that the damping layer 9A (9B) can nevertheless play its role of shock absorber, shock or impact absorber, this distance d is less than or equal to a maximum distance advantageously equal to 2 cm, advantageously still equal at 1cm, preferably equal to 0.5cm.
  • the damping layers 9A, 9B are fixed to the cutting table 4, by their edge. The fixing can be carried out by gluing, using layers of adhesive 12A, 12B.
  • a variant outside the scope of the invention shown in the figure 7B differs from the example of the figure 6 by the fact that the damping layers 9A, 9B, separated from the faces 20A, 20B, are fixed to the assembly element 3.
  • FIG. 7E differs from the embodiment of the figure 5 by the fact that the piece to be cut 2 is of cylindrical shape.
  • the damping layers 9A, 9B are in contact with the cylindrical outer surface of the part 2, only along a tangential line, parallel to the axis of the cylinder, and fixed for example by gluing to the cutting table 4 by their slice.
  • the plates constituting the damping layers 9A, 9B could have a non-planar shape, adapted to match that of the protective face to be protected ( figures 7F and 7G ).
  • the damping layers 9A, 9B are plates which are attached and arranged opposite the penetration faces to be protected from the workpiece 2, or against them , or at a distance d from these, keeping in mind that according to the invention, the damping layer covers a penetration face of the part to be cut.
  • the damping layers 9A, 9B are layers deposited on the faces to be protected of the part 2 by a layer deposition technique, for example by sputtering or by another suitable treatment (for example vacuum deposit or coating). Note that the application of these damping layers does not require precision, finesse or purity.
  • FIG 7F there is shown a first example of implementation of this embodiment, in which the piece to be cut 2 is cylindrical. Two damping layers 9A and 9B are deposited respectively on the two penetration faces, in the form of a half-cylinder, of the part 2.
  • FIG 7G a second example of implementation has been shown, in which the part to cut 2 is parallelepiped. Two damping layers 9A and 9B are deposited respectively on the two opposite faces 20A, 20B of the part 2.
  • the cutting system comprises two damping layers to protect the two penetration faces of the part to be cut. This is due to the fact that, the wire being driven in an oscillating movement comprising back and forth movements, it penetrates inside the part, in the cutting groove, by two opposite penetration faces of the part.
  • the wire being driven in an oscillating movement comprising back and forth movements, it penetrates inside the part, in the cutting groove, by two opposite penetration faces of the part.
  • a single damping layer 9A disposed facing the single penetration face of the part to be cut, is necessary.
  • One such embodiment is shown in the figure 7H .
  • the invention also relates to a process for slicing the part 2 using the cutting wire 1, in which the damping layers 9A, 9B are placed facing the penetration faces to be protected of the part 2, that is to say those by which the wire 1 is intended to penetrate when it is driven in an oscillating movement back and forth.
  • the damping layers 9A, 9B can be added plates or layers deposited by a layer deposition technique.
  • the damping layers 9A, 9B are fixed either to the piece to be cut 2, or to the assembly element 3, or to the cutting table 4.
  • the fixing is advantageously carried out by collage.
  • the damping layers 9A, 9B are placed either at least partially against the corresponding penetration faces 20A, 20B, or at a distance strictly greater than zero from these penetration faces 20A, 20B.
  • the damping layers 9A, 9B are deposited on the penetration faces 20A, 20B of the piece to be cut 2 by a layer deposition technique.
  • the table 4, the assembly element 3 and the piece to be cut 2 are assembled in translation along z, here downwards, in the direction indicated by the arrow F3, relatively wire 1 which remains at the same height along z.
  • the wire 1 (or the ply) is driven in translation in an oscillating movement along x, represented by the double arrow F2, comprising back and forth movements in the direction x.
  • the wire 1 penetrates into the part 2, that is to say into the cutting groove dug in the part 2, alternately by the penetrating face 20A and by the penetrating face 20B of the part 2.
  • the wire 1 Before entering part 2 through each of these penetration faces 20A (20B), the wire 1 passes through the corresponding damping layer 9A (respectively 9B), placed nearby. Thanks to this, the damaging effect of the abrasive wire 1 at the level of the penetration faces 20A, 20B of the part 2 is greatly attenuated, absorbed.
  • the layers constituting the damping layers 9A, 9B are deposited on the penetration faces to be protected 20A, 20B of the part to be cut 2 by a known layer deposition technique.
  • the wire is driven in a one-way movement and therefore penetrates into the part 2 by a single penetrating face
  • a single damping layer facing this penetrating face, said layer covering the face of penetration according to the invention, or being positioned at a distance d from the latter, but outside the scope of the invention.
  • the cushioning layer is either added or deposited by a layer deposition technique.
  • the invention could also be applied to a free abrasive cutting, or to a slurry, using a cutting liquid containing abrasive particles and a cutting wire with a smooth or almost smooth surface, for example made of steel.
  • a wafer is provided, in particular a wafer, of semiconductor material or ceramic, obtained by the implementation of the cutting process as just described.
  • At least one damping layer 9A, 9B extend over at least 40% of the height h of the part 2 to be cut, this height being measured parallel or substantially parallel to the z axis or to the direction of the cut F1, that is to say perpendicular or substantially perpendicular to the cutting wire or to the direction of the cutting wire .
  • At least one damping layer 9A, 9B extend over at least 60% of the height h of the part 2 to be cut, or even over at least 80 % of the height h of the piece 2 to be cut, or even over 100% of the height h of the piece 2 to be cut, or even more than 100% of the height h of the piece 2 to be cut.
  • At least the projection of a damping layer 9A, 9B, preferably each projection of the damping layers 9A, 9B, on the part in the direction of the cutting wire extends over at least 40% of the height h of the part 2 to be cut, this height being measured parallel or substantially parallel to the axis z or to the direction of the cutting F1, that is to say say perpendicular or substantially perpendicular to the cutting wire or to the direction of the cutting wire.
  • At least the projection of a damping layer 9A, 9B, preferably each projection of the damping layers 9A, 9B, on the workpiece in the direction of the cutting wire extends over at least 60% of the height h of the part 2 to be cut, or even on the minus 80% of the height h of the part 2 to be cut, or even over 100% of the height h of the part 2 to be cut.
  • At least one damping layer 9A, 9B are cut simultaneously with the part 2, either during the whole cutting time of the part 2.

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Claims (15)

  1. Verfahren zum Schneiden eines Teils (2) aus Halbleitermaterial oder aus Keramik mithilfe eines Schneidedrahtes (1) und von Schleifpartikeln in Scheiben, wobei der Draht (1) in wenigstens einer Richtung (F2) translatorisch angetrieben wird und bei seiner translatorischen Verlagerung (F2) über wenigstens eine Eindringfläche (20A, 20B) des Teils (2) in das zu schneidende Teil (2) eindringt, und wobei eine Dämpfungsschicht (9A, 9B) gegenüber der Eindringfläche (20A, 20B) des zu schneidenden Teils (2) angeordnet wird, derart, dass der Draht (1), bevor er in das Teil (2) eindringt, die Dämpfungsschicht (9A, 9B) durchquert, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B) die Eindringfläche (20A, 20B) bedeckt.
  2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass, wenn der Draht (1) in einer hin- und hergehenden Bewegung translatorisch angetrieben wird und in das zu schneidende Teil (2) abwechselnd über zwei einander gegenüberliegende Eindringflächen (20A, 20B) eindringt, zwei Dämpfungsschichten (9A, 9B) jeweils gegenüber einer der zwei Eindringflächen angeordnet werden.
  3. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B) :
    - eine Dicke (e) aufweist, die größer als das Dreifache des mittleren Durchmessers der Schleifpartikel, vorteilhafterweise größer als das Fünffache des mittleren Durchmessers der Schleifpartikel und vorteilhafterweise kleiner als 2 cm, noch besser kleiner als 1 cm und vorzugsweise kleiner als 0,5 cm ist; und/oder
    - aus wenigstens einem der Materialen der Gruppe hergestellt ist, die Polymere mit einer Härte, die größer als 90 MPa ist, und einem Elastizitätsmodul, der größer als 2 GPa ist, insbesondere gehärtete Epoxidharze und PMMA, Halbleitermaterialien, vorteilhafterweise Silizium, Keramiken mit einer Härte von weniger als 8 auf der Mohs-Skala, insbesondere ein Siliziumoxid umfasst.
  4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B) eine Platte ist, die eben ist und/oder deren Form so gestaltet ist, dass sie derjenigen der Eindringfläche angepasst ist.
  5. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet:
    - dadurch, dass die Dämpfungsschicht (9A, 9B) an der Eindringfläche (20A, 20B) des Teils (2) vorteilhafterweise durch Kleben mittels einer Klebstoffschicht (11A, 11B) befestigt wird, die eine Dicke aufweist, die vorteilhafterweise kleiner oder gleich 20 µm ist; oder
    - dadurch, dass die Dämpfungsschicht (9A, 9B) auf die Eindringfläche (20A, 20B) des Teils (2) durch ein Beschichtungsverfahren aufgebracht wird, insbesondere durch Kathodenzerstäubung oder durch eine andere Abscheidungsbehandlung.
  6. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass, wenn das zu schneidende Teil (2) mit einem Schneidetisch (4) über ein Verbindungselement (3) fest verbunden ist, die Dämpfungsschicht (9A, 9B) entweder an dem Schneidetisch (4) oder an dem Verbindungselement (3) befestigt wird.
  7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die wenigstens eine Dämpfungsschicht (9A, 9B), vorzugsweise zwei Dämpfungsschichten (9A, 9B), sich auf mindestens 40 % oder sogar auf mindestens 60 % oder sogar auf mindestens 80 % oder sogar auf 100 % oder sogar auf mehr als 100 % der Höhe (h) des zu schneidenden Teils (2) erstrecken, wobei diese Höhe senkrecht oder im Wesentlichen senkrecht zu dem Schneidedraht gemessen wird.
  8. System zum Schneiden eines Teils aus Halbleitermaterial oder aus Keramik mithilfe eines Schneidedrahtes (1) und von Schleifpartikeln in Scheiben, welches eine Vorrichtung (12A-12C) zum translatorischen Antrieb des Drahtes in wenigstens einer Richtung (F2) aufweist, wobei der Draht (1) bei seiner Verlagerung über wenigstens eine Eindringfläche (20A, 20B) des Teils (2) in das zu schneidende Teil (2) eindringt, und welches wenigstens eine Dämpfungsschicht (9A, 9B) umfasst, die gegenüber der Eindringfläche (20A, 20B) des zu schneidenden Teils (2) angeordnet ist, derart, dass der Draht (1), bevor er in das Teil (2) eindringt, die Dämpfungsschicht (9A, 9B) durchquert, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B) die Eindringfläche (20A, 20B) bedeckt.
  9. System nach Anspruch 8, dadurch gekennzeichnet, dass die Vorrichtung (12A-12C) zum Antrieb des Drahtes (1) dafür ausgelegt ist, den Draht in einer hin- und hergehenden Bewegung translatorisch anzutreiben, bei welcher der Draht (1) in das zu schneidende Teil abwechselnd über zwei einander gegenüberliegende Eindringflächen eindringt, und dadurch, dass es zwei Dämpfungsschichten (9A, 9B) umfasst, die sich jeweils gegenüber einer der zwei Eindringflächen (20A, 20B) befinden.
  10. System nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B):
    - eine Dicke aufweist, die größer als das Dreifache des mittleren Durchmessers der Schleifpartikel, vorteilhafterweise größer als das Fünffache des mittleren Durchmessers der Schleifpartikel ist, vorteilhafterweise außerdem eine Dicke, die kleiner als 2 cm, vorteilhafterweise kleiner als 1 cm und vorzugsweise kleiner als 0,5 cm ist; und/oder
    - aus wenigstens einem der Materialen der Gruppe hergestellt ist, die Polymere mit einer Härte, die größer als 90 MPa ist, und einem Elastizitätsmodul, der größer als 2 GPa ist, insbesondere gehärtete Epoxidharze und PMMA, Halbleitermaterialien, vorteilhafterweise Silizium, Keramiken mit einer Härte von weniger als 8 auf der Mohs-Skala, insbesondere ein Siliziumoxid umfasst.
  11. System nach einem der Ansprüche 8 bis 10, dadurch gekennzeichnet, dass die Dämpfungsschicht (9A, 9B) eine Platte ist, die eben ist oder deren Form so gestaltet ist, dass sie derjenigen der Eindringfläche (20A, 20B) angepasst ist.
  12. System nach einem der Ansprüche 8 bis 11, gekennzeichnet:
    - dadurch, dass die Dämpfungsschicht (9A, 9B) an der Eindringfläche (20A, 20B) des Teils (2) vorteilhafterweise durch Kleben mittels einer Klebstoffschicht (11A, 11B) befestigt ist, die vorteilhafterweise außerdem eine Dicke aufweist, die kleiner oder gleich 20 µm ist; und/oder
    - dadurch, dass die Dämpfungsschicht auf die Eindringfläche des Teils durch ein Beschichtungsverfahren aufgebracht wird, insbesondere durch Kathodenzerstäubung oder durch eine andere Abscheidungsbehandlung.
  13. System nach einem der Ansprüche 8 bis 12, dadurch gekennzeichnet, dass es einen Schneidetisch (4) und ein Verbindungselement (3) umfasst, wobei das zu schneidende Teil (2) mit dem Schneidetisch (4) über das Verbindungselement fest verbunden ist, und dadurch, dass die Dämpfungsschicht entweder an dem Schneidetisch oder an dem Verbindungselement befestigt ist.
  14. System nach einem der Ansprüche 8 bis 13, dadurch gekennzeichnet, dass es, während des Schneidens eines Teils, eine erste kinematische Einheit, die einen Schneidetisch aufweist, der mit dem zu schneidenden Teil über ein Verbindungselement fest verbunden ist, und eine zweite kinematische Einheit, die den Schneidedraht aufweist, und eine Antriebsvorrichtung, die dazu bestimmt ist, die zwei kinematischen Einheiten anzutreiben, so dass sie eine Translation relativ zueinander ausführen, umfasst.
  15. System nach einem der Ansprüche 8 bis 14, dadurch gekennzeichnet, dass die wenigstens eine Dämpfungsschicht (9A, 9B), vorzugsweise zwei Dämpfungsschichten (9A, 9B), sich auf mindestens 40 % oder sogar auf mindestens 60 % oder sogar auf mindestens 80 % oder sogar auf 100 % oder sogar auf mehr als 100 % der Höhe (h) des zu schneidenden Teils (2) erstrecken, wobei diese Höhe senkrecht oder im Wesentlichen senkrecht zu dem Schneidedraht gemessen wird.
EP17704395.7A 2016-01-14 2017-01-16 Verfahren und system zum schneiden eines werkstückes aus einem halbleitermaterial oder keramik mit einem schneiddraht und schleifpartikeln Active EP3402642B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1650287A FR3046737B1 (fr) 2016-01-14 2016-01-14 Procede et systeme de decoupe en tranches d'une piece en materiau semi-conducteur ou en ceramique, a l'aide d'un fil de decoupe et de particules abrasives
PCT/EP2017/050821 WO2017121900A1 (fr) 2016-01-14 2017-01-16 Procede et systeme de decoupe en tranches d'une piece en materiau semi-conducteur ou en ceramique, a l'aide d'un fil de decoupe et de particules abrasives

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CN1203966C (zh) * 2001-10-17 2005-06-01 株式会社新王磁材 使用线状锯的切断方法和线状锯装置以及稀土类磁体的制造方法
DE102006033699B4 (de) * 2006-07-20 2009-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Drahtsäge mit kontrollierbarem Drahtfeld
DE102010049472A1 (de) * 2009-10-27 2011-06-09 Meyer Burger Ag Drahtsäge mit Drahtfeld und Abziehleiste
DE112011103905B4 (de) * 2010-11-24 2022-09-15 Mitsubishi Electric Corporation Drahtschneideelektroerodierverfahren und Halbleiterwaferherstellungsverfahren

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WO2017121900A1 (fr) 2017-07-20
FR3046737B1 (fr) 2018-06-29
EP3402642A1 (de) 2018-11-21

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