EP3396845A1 - Générateur d'écoulement tourbillonnaire - Google Patents

Générateur d'écoulement tourbillonnaire Download PDF

Info

Publication number
EP3396845A1
EP3396845A1 EP18162538.5A EP18162538A EP3396845A1 EP 3396845 A1 EP3396845 A1 EP 3396845A1 EP 18162538 A EP18162538 A EP 18162538A EP 3396845 A1 EP3396845 A1 EP 3396845A1
Authority
EP
European Patent Office
Prior art keywords
vortex
magnetic field
vortices
energy
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18162538.5A
Other languages
German (de)
English (en)
Inventor
Richard Adams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Turbine Systems Inc
Original Assignee
Silicon Turbine Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Turbine Systems Inc filed Critical Silicon Turbine Systems Inc
Publication of EP3396845A1 publication Critical patent/EP3396845A1/fr
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H02N11/002—Generators

Definitions

  • the present invention relates to a method and apparatus for energy conversion. More specifically, the invention relates to a method and apparatus for cyclical conversion of an input energy source into the kinetic energy of a magnetic field modulated by vortices, and then into electric energy.
  • Electrical conductor Comprised of an assemblage of matter that forms a volume of material with the property of conducting electric current with low loss or no loss.
  • Diamagnetism A property of matter where magnetic fields permeate with a reduced degree of penetration, or are repelled, defined here to clarify the definition of vortices used herein.
  • Vortex when used, the plural “vortices” is also implied: Comprised of matter forming a area, located within and / or adjacent to a vortex material, that has the characteristic of reduced diamagnetism within said area, relative to a comparatively increased diamagnetism outside said area.
  • the said area may be comprised of an additional dimension establishing a volume.
  • the reduced diamagnetism allows a higher magnetic field density within a vortex, while the area surrounding the vortex has a relatively lower density of the magnetic field.
  • Vortices are formed by a set of conditions applied to a vortex material. For example, by placing a vortex material, that may be comprised of a superconductor material, in a magnetic field, and transferring heat energy out of the material, urging the material into the superconducting state, vortices form within and / or adjacent to the material.
  • a vortex forms, the magnetic field density inside the vortex increases, and since the field may be comprised of a total field in an area in which that field is conserved, the magnetic field surrounding the vortex is urged to decrease, such that the total conserved field, comprising the field inside and outside the vortex, remains the same.
  • Vortex material Comprised of an assemblage of matter within and / or adjacent to which a vortex can form.
  • the vortex th at forms may do so because of conditions comprised by the properties of the said vortex material.
  • An example vortex material is a superconductor material.
  • the vortex material may be comprised of an assemblage of various materials that include both superconducting and non-superconducting materials, such that assemblage will produce a vortex.
  • the other matter assembled may be comprised of materials that include mechanical support, energy flow connections, insulation, and materials that urge an artificial means to predispose the location that a vortex will form.
  • the vortex material may be re-entrant, meaning that the vortex forms and subsequently dissipates in the vortex material, without any external stimulation.
  • the vortex material may be non-re-entrant, meaning that that a vortex forms and / or dissipates only upon external stimulation.
  • the vortex material may be comprised of materials that exhibit both re-entrant and non-reentrant behavior.
  • the vortex material may be comprised of materials that can be stimulated to form and dissipate vortices by a controlling means that transfers energy into and out of the vortex material.
  • the vortices that form may be comprised of predisposed dimensions that are determined by the properties of the assemblage of matter that forms the vortex material, and determined by the environmental conditions that the vortex material is operated in..
  • predisposed dimensions that are determined by the properties of the assemblage of matter that forms the vortex material, and determined by the environmental conditions that the vortex material is operated in..
  • Other vortices nearby will also form at predictable locations nearby the vortices specifically compelled, by virtue of predisposed dimensions of the vortices.
  • Magnetic field modulation A change in the density of a magnetic field permeating an area of matter, whereby the change occurs over an interval of time. For example, the formation and dissipation of a vortex will change the magnetic field near where the vortex forms and dissipates.
  • This changing magnetic field over time is a kinetic energy, comprised of a movement of the density of the field, also known as a modulation of the magnetic field, since the field density is moving as time elapses.
  • This may be referred to as field modulation, field density change, movement of magnetic flux, or modulation of the field. All have the same meaning.
  • Inductor An electrical conductor formed such that magnetic field modulation nearby the electrical conductor induces an electric current to flow in the electrical conductor.
  • This energy conversion objective is achieved by the present invention that utilizes the known properties of vortex materials that modulate magnetic flux in a magnetic circuit, combined with the known laws of electromagnetic induction, whereby the modulated magnetic flux produces an electromotive force in electrical conductors, that can be used to supply electrical energy to devices that require an input of electrical energy.
  • the vortex flux generator employs the magnetic field from a magnetic circuit, a vortex material that is known to produce vortices that modulate the magnetic field, and a plurality of interconnected inductors disposed near the location of the vortices, such that the flux modulation of the vortices is converted into electricity, and accumulated into electrical conductors.
  • a controller means is used provide the conditions needed to urge the vortex material to form vortices, and thereby modulate the magnetic field.
  • the controller's function may be summarized that it is comprised of a means or collection of means to transfer energy into and out of the vortex material.
  • the vortices that are facilitated to occur by the known properties of the vortex material, occur at a microscopic level of existence.
  • the inductors are manufactured to match the microscopic modulation. Microelectronic manufacturing methods are used fabricate the inductors that are comprised of the correct dimensions, position, and to interconnect them.
  • the electrical power produced is comprised of an accumulation of the converted energy of a plurality of vortices that is induced into a plurality of inductors.
  • the inductors are manufactured with their position and size known, as according to the design parameters of the manufacturing process.
  • the vortex material produces vortices by virtue of the properties of the vortex material. By fabricating a vortex material, the vortices may occur.
  • the vortices are artificially aligned to the inductors, by urging the vortices to form at locations corresponding to the known location of the inductors.
  • the controller transfers energy that may be comprised of energy from a variety of sources into the apparatus, and removes excess energy that is not converted into electricity. In this energy transfer proce ss, vortices are formed and dissipated, causing electricity to be generated in the inductors.
  • the present invention can be practiced minimally by using a single vortex.
  • the present invention can be scaled to any size by increasing the quantity of vortices and the quantity of inductors, to comprise a generator suitable to power a broad range of electric power applications.
  • the energy input may be comprised of energy from a broad range of energy sources.
  • the present invention is a vortex flux generator 500 (shown in FIGURE 1 ) that combines the known property of vortex materials, including magnetic flux modulation, to urge an electric current to flow in an inductor using the known property of electromagnetic induction.
  • a magnetic circuit is formed using a magnetic core 27, comprised of magnetic powder or amorphous metal with a 0.7 Tesla magnet or magnets 21, comprised of a permanent magnet or electromagnet inserted in the circuit, yielding a magnetic field denoted by the illustrative field lines 20.
  • a vortex material 24, and inductor array 22, are placed within the magnetic circuit. Thereby, the vortex material and inductor array are adjacent to each other in the magnetic field.
  • the elements of the component labeled "Controller" in FIGURE 1 are detailed in FIGURE 11 .
  • the Electricity Output 200 represents the power output of the present invention.
  • a microscopic inductor is fabricated using microelectronic fabrication.
  • This fabrication process is comprised of a layered microelectronic process analogous to the process currently used to fabricate CMOS integrated circuit chips.
  • the exemplary expanded inductor shown in FIGURE 3 is comprised of five layers of copper alloy electrical conductors 72, where the trace width and spacing is fifty five nanometers. Both the trace height of eighty two nanometers, and insulator 73 thickness of ten nanometers, are not proportionally scaled to the thickness of the electrically conductive layer in the illustration.
  • An electrical interconnect 71 may be comprised of a continuation of the trace of the electrical conductor 72. This interconnect 71 may be used to connect to other inductor assemblies. An analogous interconnect, at the bottom most conductor layer shown, provides the connection for the opposite end of the inductor assembly in FIGURE 3 .
  • each layer of the electrically conductive material is an arced segment that is not closed upon itself.
  • Each layer comprises three-fourths of a turn of an equivalent helical coil.
  • a helical coil fabricated from a fifty nanometer diameter wire, depicted in FIGURE 4 may be utilized as the inductor in the present invention.
  • FIGURE 3A the expansion of the view in FIGURE 3 is decreased, forming a more uniform illustration.
  • This inductor assembly of FIGURE 3A is comprised of the same components as FIGURE 3 .
  • the inductor assembly 37 is comprised of seven layers of an electrical conductor, and seven layers of insulator, comprising five and one quarter turns of the conductor that comprises the inductor, about its central axis.
  • the inductor 37 is an extension of the assembly in FIGURE 3 A, with more layers, such that the electrical interconnects 36 and 40 for the assembly exit on opposite sides, facilitating interconnection to the adjacent inductor assembly also shown in FIGURE 8 , and interconnected with trace extension 40.
  • fourteen of these layered inductor assemblies 66 are depicted in an array upon a substrate 65.
  • the substrate 65 is comprised of a one millimeter silicon wafer.
  • FIGURE 6 a single inductor 30 is illustrated. Magnetic flux lines 32 are shown in the state where no vortex is present from the vortex material 31, and there is negligible current flowing in the inductor 30.
  • FIGURE 7 illustrates the same components as FIGURE 6 , wherein a vortex 35 has formed, and the magnetic field indicated is increasing in density in the vortex 35, and in the adjacent single inductor.
  • the increasing magnetic field density is illustrated by 33. While the magnetic field density is increasing in the inductor, electric power flows from the inductor, indicated by the arrow 34. Though not depicted, when the vortex dissipates, electric power also flows from the inductor, with the current in the opposite direction, according to Lenz's Law.
  • FIGURE 8 illustrates a placement of inductor assemblies 37 in between the location that vortices 39 form from a vortex material 41. Three vortices are shown.
  • the interconnect 40 connects the two illustrated inductor assemblies shown in series. This connection accumulates the electric power from the inductors.
  • the interconnect 36 may comprise a connection to another inductor, or a connection to a load powered by the Electricity Output 200 of the present invention, shown in FIGURE 1 and FIGURE 11 .
  • Each of the inductor assemblies has connector terminals comprised of at least two terminals.
  • the interconnecting conductors between them establish an interconnecting means. Every interconnection results in a fewer number of conductors emanating from the plurality of interconnected inductors so connected.
  • millions of inductors are connected in series, resulting in an accumulation of the electrical power from millions of inductors into a single pair of conductors, thereby providing a fewer number of conductors, by using microelectronic fabrication of an interconnecting means of a plurality of interconnected inductors.
  • a million inductors have at least two million connection terminals. When interconnected, the million inductors have a result that may be comprised of two terminals instead of two million.
  • the magnetic flux 38 may be comprised of an induced electric power in the inductor by the action of the vortex while the vortex is stationary with respect to the inductor and vortex material 41. This is by the increased density of magnetic flux within the vortex as compared to the density of the flux surrounding the vortex.
  • the electric power induced in the inductor may be induced by an electromagnetic induction comprised of a changing magnetic field with respect to the inductor by a movement of a vortex respectively to the inductor, where the vortex 39 that carries an increased magnetic field density within it moves with respect to the inductor 37.
  • an electromagnetic induction comprised of a changing magnetic field with respect to the inductor by a movement of a vortex respectively to the inductor, where the vortex 39 that carries an increased magnetic field density within it moves with respect to the inductor 37.
  • a means is deployed to have the vortices form at predetermined positions, vortices may move respectively to the vortex material and inductors by the action of energy in the vortex material.
  • Said energy may be comprised of the energy of the electrical current produced by the Quench Control 600 in FIGURE 11 .
  • the electric power induced in the inductor may be induced by an electromagnetic induction comprised of a changing magnetic field with respect to the inductor by a displacement of magnetic flux density from one vortex to another. This occurs by the property of the vortices, where an amount of flux in one vortex may displace to other vortices. Although the total of the flux density in all vortices is conserved, the flux passing through an inductor disposed nearby will change, producing electricity in the inductors that encompass the changing flux.
  • FIGURE 9A depicts a surface plane of the vortex material.
  • the vortex material 61 is comprised layers of materials deposited on a substrate, that may either begin with the same substrate as the substrate for the inductor array, or utilize its own substrate. If on its own substrate, the substrate used may be comprised of a material that has a cryogenic contraction rate analogous to the rate of contraction of the inductor substrate, such that the alignment between the vortices and inductors is maintained across the range of operating temperatures.
  • the substrate for the vortex material chip and the substrate for the inductor array chip may both be comprised of a one millimenter silicon wafer.
  • buffer and insulator layers are used, and a Bismuth based Type II superconductor thin film fifty nanometers thin deep, commonly known as Bi-2223 is deposited, resulting in a smooth surface that will mate with the inductor chip's smoothed surface.
  • Bi-2223 Bismuth based Type II superconductor thin film fifty nanometers thin deep
  • FIGURE 9A also depicts the locations where a means to urge vortices to form at predetermined positions is deployed. Fourteen such locations are identified 62. At locations 62, the material may have a change in static magnetic permeability, such as by the deposition of a material at these locations with a different magnetic permeability than the surrounding material, providing a means to urge a gradient in the magnetic field density resulting in a different magnetic field density, and in particular a static gradient change in the magnetic field at 62, whereby a vortex forms there.
  • Another means to urge vortices to form at predetermined positions may be comprised of the actuation of an inductor adjacent to the vortex material, by an electrical current in the inductor, using the inductor as a solenoid electromagnet, thus comprising a means for a dynamic gradient change in the magnetic field, whereby the vortex will form at the location 62, as urged by of the solenoid's magnetic field.
  • Another means to urge vortices to form at predetermined positions may be comprised of a means for a change in the uniformity of the vortex material at predetermined positions. This may be comprised of a change in molecular composition in the material, such as by the deposition of molecules that are different from the molecules of vortex material, at the predetermined positions 62.
  • Another means to urge vortices to form at predetermined positions may be comprised of a change in the crystal lattice structure, comprised of a defect or non- uniformity of the lattice at predetermined positions, comprised of a similar molecular formula as the whole, though with different atoms specifically at the predetermined positions 62 in the lattice.
  • Another means to urge vortices to form at predetermined positions may be comprised of a change in dimension of the vortex material at predetermined positions, such as a change in the thickness of the layers of substrate, buffer or vortex generating molecular regime, such as is used in the exemplary embodiment described below.
  • an etching process is used to change the dimension of the Bi-2223 thin film at locations 62, to establish the locations where vortices will form.
  • This change in dimension is effected by an etching process that is comprised of reducing the depth of the Bi-2223 material by twenty five nanometers in a half spherical etching cavity that is twenty five nanometers in diameter, at each location 62.
  • FIGURE 9B illustrates the same vortex material as FIGURE 9A , where the vortices 64 have formed.
  • FIGURE 10 is an illustration of the corresponding locations of the inductor assemblies that are comprised of a layered construction method detailed in FIGURE 3 and FIGURE 3A , that are grouped into a matrix, and interconnected to accumulate the electric power induced into them by the modulated flux from the vortices of FIGURE 9B .
  • the inductor array substrate 65 of FIGURE 10 is assembled adjacent to the vortex material substrate 61 of FIGURE 9A , by layering the two substrates upon each other.
  • the vortices which form at the predetermined positions within the vortex material, that is layered to the inductor array substrate, are formed at positions with correspond to the position of the inductors.
  • the predetermined positions place the vortices three hundred and thirty nanometers apart at their centers.
  • the length of the segments in the inductors may be comprised of a length that is approximately half or less than the distance between the vortices. This establishes at least one predetermined dimension that in the exemplary embodiment is one hundred and sixty five nanometers in length, for the segments of the inductors.
  • the predetermined positions and dimension are illustrated by the correspondence of the location of vortices and inductors in FIGURE 6, FIGURE 7, FIGURE 8 , FIGURE 9A, FIGURE 9B, and FIGURE 10 .
  • the figures shown may comprise a scale that is different from the scale of the exemplary embodiment.
  • the inductor array is comprised of one billion interconnected inductor assemblies on a chip 28, with an area of one centimeter square.
  • the substrate of the inductor array chip 28 is facing up.
  • the vortex material chip 29, on its own substrate, has its substrate facing down.
  • FIGURE 2B the two sandwiched chips from FIGURE 2A are installed into the substrate, such that the chip 29 of FIGURE 2A , now attached to chip 28, is concealed beneath chip 28 in the illustration of FIGURE 2B , inside the substrate cavity 30 of FIGURE 2A .
  • the two layers 77 and 78 correspond to the two chips 28 and 29 of FIGURE 2A , in this particular example.
  • FIGURE 5 depicts the usage of an alignment means to ensure the corresponding placement of the vortex locations and inductor locations using perpendicular references 75, and alignment marks 76 manufactured into each chip 77 and 78, wherein the alignment marks correspond to the placement of the elements of each respective chip to be aligned.
  • FIGURE 5 illustration may also refer to the alignment of individual layers, rather than specific chips
  • the chips aligned and attached to each other using the aforesaid alignment method are mounted into a substrate with a cavity 30 of FIGURE 2A .
  • the cavity provides a recess into which the chip 29 will be contained after being mounted to chip 28.
  • the result is that the larger chip 28 appears on the top of the substrate 30, and this result is shown in FIGURE 2B .
  • This re suiting aligned chip sandwich includes the vortex material 24, and inductor array 22, both of FIGURE 1 , inserted into the magnetic circuit 27.
  • the Bismuth based superconductor used as the source of the vortices in the vortex material chip operates at cryogenic temperatures, as a superconductor, in the magnetic field of the magnetic circuit.
  • the energy that is the source of the converted energy, and the energy that performs the quenching may be comprised of at least one of these, or a plurality of these.
  • a Bi-2223 superconductor thin film can be rapidly quenched with a modest electrical current when a static magnetic field is already present, as in the case of the present invention.
  • a quench control circuit 600 applies a pulse of electric current to the vortex material.
  • the current used is ten times the nominal half ampere quenching current, applied as a high speed current pulse via Quench Control circuit 600, as a one hundred nanosecond, five ampere quenching pulse. This quenches the vortex material within 500, dissipating vortices. Feedback may be utilized by Quench Control 600 to modulate the quenching pulse, while utilizing minimal electric energy, such that the net Electricity Output 200 is maximized.
  • a vortex material in the present invention may be comprised of one that is a re-entrant vortex material, a non-re-entrant vortex material, and a vortex material which is controlled by a means of stimulation nearby the vortex material
  • the controller of FIGURE 1 exploded into detail within FIGURE 11 , supplies an means of external stimulation, via the pulsed current, to operate the vortex material in a cyclical re-entrant mode.
  • Heat energy is used in the vor tex material to effect the change in organization. Since the vortex material is not operated adiabatically, instead of its temperature simply lowering, heat energy is transferred into the vortex material, whereby the vortex material effectively absorbs heat energy from its operating environment, especially through the heat valve 300. The actual action is that the heat energy transfers from the warmer heat valve 300 to the vortex material.
  • Energy supplied to the present invention may be comprised of heat energy by heat source 100, as modulated by heat valve 300.
  • the present invention requires a sufficient flow of energy to provide for the energy needed to be converted to electricity output 200, plus the energy that is output at waste heat sink output 800, plus the energy needed by self conversion to power the quench control 600 and cryogenic pump 700 when switch 95 is not in the battery 400 position.
  • the Bi-2223 material After cessation of the quenching current pulse, and absorbing energy from the source, the Bi-2223 material, still below its superconducting temperature threshold Tc, will be in the superconducting state, and vortices are again formed, flux is modulated, and electricity generated in the inductor array chip within 500.
  • Vortex formation, quenching, vortex dissipation, energy absorption, together with generation of electricity by electromagnetic induction from magnetic field modulation, are the cycles of the method of the present invention.
  • more than one form of energy was involved in the cycles of the method of the present invention, comprised of the energy of an electric current, and heat energy.
  • the usable Electricity Output for the system is ten watts, with an energy input that may be comprised of 10.1 watts.
  • the system may be scaled upward, and the cycle rate increased to provide correspondingly higher output capacities.
  • the vortex flux generator in an exemplary embodiment is used as a thermoelectric converter, with an intermediate phase of magnetic field modulation.
  • Energy from the Heat Source 100 is converted into Electricity Output 200.
  • Heat energy which may be comprised of waste heat, is removed via the cryogenic pump 700 to the waste heat sink 800.
  • Waste heat sink 800 may be comprised of a sink at a lower temperature than heat source 100.
  • Battery 400 is enabled via switch 95 to start the process, supplying electric power to run the cryogenic pump 700, and the quench control 600. After the cyclical energy generation operation begins, and the heat energy source is used as the energy input for the system, switch 95 may select that a portion of the electrical output of the generator 500 be used to power the quench control 600 and cryogenic pump 700, rather than use the battery.

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Particle Accelerators (AREA)
EP18162538.5A 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire Withdrawn EP3396845A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19488108P 2008-09-30 2008-09-30
PCT/IB2009/054268 WO2010038196A2 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire
EP09817354.5A EP2329589B1 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
EP09817354.5A Division EP2329589B1 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire

Publications (1)

Publication Number Publication Date
EP3396845A1 true EP3396845A1 (fr) 2018-10-31

Family

ID=42073967

Family Applications (2)

Application Number Title Priority Date Filing Date
EP18162538.5A Withdrawn EP3396845A1 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire
EP09817354.5A Active EP2329589B1 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP09817354.5A Active EP2329589B1 (fr) 2008-09-30 2009-09-30 Générateur d'écoulement tourbillonnaire

Country Status (4)

Country Link
US (4) US8692437B2 (fr)
EP (2) EP3396845A1 (fr)
CN (1) CN102171920B (fr)
WO (1) WO2010038196A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3396845A1 (fr) 2008-09-30 2018-10-31 Silicon Turbine Systems, Inc. Générateur d'écoulement tourbillonnaire
JP5795588B2 (ja) 2009-10-02 2015-10-14 アンバチュア インコーポレイテッド 極めて低い抵抗フィルムおよびそれを変性または生成するための方法
US8211833B2 (en) 2010-06-04 2012-07-03 Ambature, Llc Extremely low resistance composition and methods for creating same
WO2011041766A1 (fr) 2009-10-02 2011-04-07 Ambature L.L.C. Films supraconducteurs à haute température et procédés de modification et de création de ceux-ci
EP2558797B1 (fr) * 2010-04-12 2018-06-06 Silicon Turbine Systems, Inc. Procédé et appareil pour la génération d'électricité à l'aide d'une induction électromagnétique, comprenant un transfert thermique entre un générateur de flux tourbillonnant et un compartiment de réfrigérateur
US8404620B2 (en) 2011-03-30 2013-03-26 Ambature, Llc Extremely low resistance compositions and methods for creating same
US10312835B2 (en) * 2016-03-24 2019-06-04 Silicon Turbine Systems, Inc. Vortex flux generator
CN117118189B (zh) * 2023-10-23 2024-02-13 四川名人居门窗有限公司 一种线性运动磁场产生涡流的回路结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421330A (en) * 1967-04-17 1969-01-14 United Aircraft Corp Thermomagnetic transfer of heat through a superconductor
US3478230A (en) * 1967-04-17 1969-11-11 United Aircraft Corp Thermomagnetic generation of power in a superconductor
WO2008005158A2 (fr) * 2006-06-14 2008-01-10 Potomac Energy Projects, Llc Procédé et appareil pour une conversion directe d'énergie

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3119236A (en) 1962-04-27 1964-01-28 Honeywell Regulator Co Superconductive temperature control
FR2045754A1 (fr) 1968-06-19 1971-03-05 Fizitcheski Inst
DE1803804C3 (de) * 1968-10-18 1973-09-27 Kernforschungsanlage Juelich Gmbh, 5170 Juelich Thermogenerator zur Erzeugung von Gleichstrom fur supraleitende Strom kreise
US3875435A (en) * 1974-04-01 1975-04-01 Nasa Heat operated cryogenic electrical generator
US4292579A (en) * 1977-09-19 1981-09-29 Constant James N Thermoelectric generator
US5091361A (en) 1990-07-03 1992-02-25 Hed Aharon Z Magnetic heat pumps using the inverse magnetocaloric effect
JPH0773424B2 (ja) * 1992-10-21 1995-08-02 超電導発電関連機器・材料技術研究組合 超電導発電機および固定子部品
JP3388841B2 (ja) * 1993-09-17 2003-03-24 株式会社ワイ・ワイ・エル 熱発電装置
JPH07274562A (ja) * 1994-03-28 1995-10-20 Hiroyuki Ito 超電導体のマイスナー効果を利用した発電方法
JPH08236369A (ja) * 1995-02-23 1996-09-13 Nobuo Ishida 超電導におけるクエンチ現象を利用した発電方式
CN1210389A (zh) * 1998-09-14 1999-03-10 高步 超导体在超导电能输出机中应用新方法
US20050156702A1 (en) * 2004-01-20 2005-07-21 Marshall Eric G. Motionless electromagnetic turbine
TWI270243B (en) * 2004-11-23 2007-01-01 Ind Tech Res Inst Device of micro vortex for ferro-fluid power generator
US7610071B2 (en) * 2006-03-27 2009-10-27 Uchicago Argonne, Llc Tunable, superconducting, surface-emitting teraherz source
EP3396845A1 (fr) 2008-09-30 2018-10-31 Silicon Turbine Systems, Inc. Générateur d'écoulement tourbillonnaire
GB2497758A (en) * 2011-12-20 2013-06-26 Univ Antwerpen Generation of charged particle vortex waves

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421330A (en) * 1967-04-17 1969-01-14 United Aircraft Corp Thermomagnetic transfer of heat through a superconductor
US3478230A (en) * 1967-04-17 1969-11-11 United Aircraft Corp Thermomagnetic generation of power in a superconductor
WO2008005158A2 (fr) * 2006-06-14 2008-01-10 Potomac Energy Projects, Llc Procédé et appareil pour une conversion directe d'énergie

Also Published As

Publication number Publication date
US8692437B2 (en) 2014-04-08
US20110241478A1 (en) 2011-10-06
EP2329589A2 (fr) 2011-06-08
EP2329589A4 (fr) 2014-08-13
US9923489B2 (en) 2018-03-20
US10700621B2 (en) 2020-06-30
EP2329589B1 (fr) 2018-03-21
WO2010038196A3 (fr) 2010-05-27
US20140265643A1 (en) 2014-09-18
CN102171920B (zh) 2014-10-29
WO2010038196A2 (fr) 2010-04-08
US20180205328A1 (en) 2018-07-19
US9548681B2 (en) 2017-01-17
US20170346417A1 (en) 2017-11-30
CN102171920A (zh) 2011-08-31

Similar Documents

Publication Publication Date Title
US10700621B2 (en) Vortex flux generator
US12034385B2 (en) Vortex flux generator
US10429104B2 (en) Method and apparatus for electricity generation using electromagnetic induction including thermal transfer between vortex flux generator and refrigerator compartment
JP5566286B2 (ja) 熱エネルギを電気エネルギに変換する方法
Ahn et al. A comparison of two micromachined inductors (bar-and meander-type) for fully integrated boost DC/DC power converters
EP2375191A1 (fr) Structure thermo-électrique
JP2002542758A (ja) 発電するための熱力学サイクル及び方法
US8809667B2 (en) Thermoelectric semiconductor component
Benhadouga et al. Sliding Mode Control for MPPT of a Thermogenerator
RU1825433C (ru) Катушка индуктивности
WO2002015289A2 (fr) Extracteur electronique thermoelectrique utilise pour generer de la puissance thermoelectrique
WO2024013664A1 (fr) Diode supraconductrice

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180418

AC Divisional application: reference to earlier application

Ref document number: 2329589

Country of ref document: EP

Kind code of ref document: P

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20200327