EP3353339A4 - Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté - Google Patents

Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté Download PDF

Info

Publication number
EP3353339A4
EP3353339A4 EP16849805.3A EP16849805A EP3353339A4 EP 3353339 A4 EP3353339 A4 EP 3353339A4 EP 16849805 A EP16849805 A EP 16849805A EP 3353339 A4 EP3353339 A4 EP 3353339A4
Authority
EP
European Patent Office
Prior art keywords
techniques
vapor deposition
silicon carbide
high purity
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP16849805.3A
Other languages
German (de)
English (en)
Other versions
EP3353339A1 (fr
Inventor
Mark S. Land
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pallidus Inc
Original Assignee
Melior Innovations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Melior Innovations Inc filed Critical Melior Innovations Inc
Priority to EP24168962.9A priority Critical patent/EP4407079A2/fr
Publication of EP3353339A1 publication Critical patent/EP3353339A1/fr
Publication of EP3353339A4 publication Critical patent/EP3353339A4/fr
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/18Epitaxial-layer growth characterised by the substrate
    • C30B25/20Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
EP16849805.3A 2015-09-24 2016-09-23 Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté Ceased EP3353339A4 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP24168962.9A EP4407079A2 (fr) 2015-09-24 2016-09-23 Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562232355P 2015-09-24 2015-09-24
PCT/US2016/053567 WO2017053883A1 (fr) 2015-09-24 2016-09-23 Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Division EP4407079A2 (fr) 2015-09-24 2016-09-23 Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete

Publications (2)

Publication Number Publication Date
EP3353339A1 EP3353339A1 (fr) 2018-08-01
EP3353339A4 true EP3353339A4 (fr) 2019-05-08

Family

ID=58387445

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16849805.3A Ceased EP3353339A4 (fr) 2015-09-24 2016-09-23 Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté
EP24168962.9A Pending EP4407079A2 (fr) 2015-09-24 2016-09-23 Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP24168962.9A Pending EP4407079A2 (fr) 2015-09-24 2016-09-23 Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete

Country Status (4)

Country Link
EP (2) EP3353339A4 (fr)
CN (2) CN114000197A (fr)
TW (4) TWI719164B (fr)
WO (1) WO2017053883A1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3382068B1 (fr) * 2017-03-29 2022-05-18 SiCrystal GmbH Substrat de carbure de silicium et procédé de croissance de lingots monocristallins de sic
EP3382067B1 (fr) * 2017-03-29 2021-08-18 SiCrystal GmbH Substrat de carbure de silicium et procédé de croissance de lingots monocristallins de sic
CN110921670B (zh) * 2018-09-19 2022-01-07 比亚迪股份有限公司 碳化硅及其制备方法
WO2020203516A1 (fr) 2019-03-29 2020-10-08 学校法人関西学院 Dispositif de fabrication de substrat semi-conducteur comprenant des moyens d'inversion de gradient de température et procédé de fabrication de substrat semi-conducteur
CN110396717B (zh) * 2019-07-12 2020-07-28 山东天岳先进材料科技有限公司 高质量高纯半绝缘碳化硅单晶、衬底及其制备方法
TWI698397B (zh) 2019-11-11 2020-07-11 財團法人工業技術研究院 碳化矽粉體的純化方法
EP4081674A1 (fr) * 2019-12-27 2022-11-02 Wolfspeed, Inc. Tranches de carbure de silicium de grand diamètre
US12006591B2 (en) 2020-03-02 2024-06-11 Ii-Vi Advanced Materials, Llc Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法
CN113818081A (zh) * 2020-06-18 2021-12-21 盛新材料科技股份有限公司 半绝缘单晶碳化硅块材以及粉末
TWI771183B (zh) * 2020-10-20 2022-07-11 環球晶圓股份有限公司 碳化矽晶圓的拋光方法
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
CN114804113B (zh) * 2022-05-26 2024-02-02 哈尔滨晶彩材料科技有限公司 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2301349A (en) * 1995-05-31 1996-12-04 Bridgestone Corp Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal.
US20120192790A1 (en) * 2009-06-22 2012-08-02 Zhizhan Chen Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
US20130161647A1 (en) * 2011-12-26 2013-06-27 Sumitomo Electric Industries, Ltd. Ingot, substrate, and substrate group
WO2016049344A2 (fr) * 2014-09-25 2016-03-31 Melior Innovations, Inc. Matériaux, applications et dispositifs de carbure de silicium à base de polysilocarb

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US34861A (en) 1862-04-01 Improved washing-machine
NL87348C (fr) 1954-03-19 1900-01-01
US3228756A (en) 1960-05-20 1966-01-11 Transitron Electronic Corp Method of growing single crystal silicon carbide
US3236780A (en) 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
NL6615060A (fr) 1966-10-25 1968-04-26
US3962406A (en) 1967-11-25 1976-06-08 U.S. Philips Corporation Method of manufacturing silicon carbide crystals
US4147572A (en) 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
DE3230727C2 (de) 1982-08-18 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von Einkristallen aus Siliziumkarbid SiC
US4556436A (en) 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
US4664944A (en) 1986-01-31 1987-05-12 The United States Of America As Represented By The United States Department Of Energy Deposition method for producing silicon carbide high-temperature semiconductors
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5180694A (en) 1989-06-01 1993-01-19 General Electric Company Silicon-oxy-carbide glass method of preparation and articles
US5611955A (en) 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JP3491402B2 (ja) 1995-08-07 2004-01-26 株式会社デンソー 単結晶製造方法及びその単結晶製造装置
US5762896A (en) 1995-08-31 1998-06-09 C3, Inc. Silicon carbide gemstones
US5683507A (en) 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
RU2094547C1 (ru) 1996-01-22 1997-10-27 Юрий Александрович Водаков Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа
US5667587A (en) 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
JP3958397B2 (ja) * 1997-02-17 2007-08-15 東洋炭素株式会社 化学気相蒸着炭化ケイ素材の製造方法
US5873937A (en) 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
US6056820A (en) * 1998-07-10 2000-05-02 Northrop Grumman Corporation Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide
TWI235863B (en) 1998-11-30 2005-07-11 Toshiba Corp Manufacturing method of liquid crystal lattice
US6824611B1 (en) 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
AU2001250835A1 (en) 2000-03-13 2001-09-24 Ii-Vi Incorporated Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
US6706114B2 (en) 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
WO2003100123A1 (fr) * 2002-05-23 2003-12-04 UNIVERSITé DE SHERBROOKE Depot de films ceramiques minces sur differents substrats et leur procede d'obtention
US7485570B2 (en) 2002-10-30 2009-02-03 Fujitsu Limited Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
US7221010B2 (en) 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP4480349B2 (ja) * 2003-05-30 2010-06-16 株式会社ブリヂストン 炭化ケイ素単結晶の製造方法及び製造装置
US7608524B2 (en) 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
US9388509B2 (en) 2005-12-07 2016-07-12 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
US8361227B2 (en) 2006-09-26 2013-01-29 Ii-Vi Incorporated Silicon carbide single crystals with low boron content
US8329133B2 (en) 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
CN101701358B (zh) * 2009-11-25 2012-06-06 上海硅酸盐研究所中试基地 高品质大碳化硅单晶的制备方法及用其制备的碳化硅单晶
US8377806B2 (en) 2010-04-28 2013-02-19 Cree, Inc. Method for controlled growth of silicon carbide and structures produced by same
JP2013212952A (ja) 2012-04-02 2013-10-17 Sumitomo Electric Ind Ltd 炭化珪素単結晶の製造方法
US9815943B2 (en) * 2013-03-15 2017-11-14 Melior Innovations, Inc. Polysilocarb materials and methods
DE102013006118B3 (de) * 2013-04-10 2014-04-03 FCT Hartbearbeitungs GmbH Herstellung hochreiner, dichter Siliziumcarbid-Sinterkörper und so erhältliche Sinterkörper
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US20160207783A1 (en) * 2013-05-02 2016-07-21 Melior Innovations, Inc. High purity polysilocarb derived silicon carbide materials, applications and processes
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US8981564B2 (en) 2013-05-20 2015-03-17 Invensas Corporation Metal PVD-free conducting structures
EP3110895A4 (fr) * 2014-02-28 2018-04-25 Melior Innovations Inc. Matériaux de type polysilocarb, procédés et utilisations
CN103833035B (zh) * 2014-03-06 2017-01-11 台州市一能科技有限公司 一种碳化硅的制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2301349A (en) * 1995-05-31 1996-12-04 Bridgestone Corp Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal.
US20120192790A1 (en) * 2009-06-22 2012-08-02 Zhizhan Chen Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals
US20130161647A1 (en) * 2011-12-26 2013-06-27 Sumitomo Electric Industries, Ltd. Ingot, substrate, and substrate group
WO2016049344A2 (fr) * 2014-09-25 2016-03-31 Melior Innovations, Inc. Matériaux, applications et dispositifs de carbure de silicium à base de polysilocarb

Also Published As

Publication number Publication date
EP4407079A2 (fr) 2024-07-31
TW202413743A (zh) 2024-04-01
TWI719164B (zh) 2021-02-21
TW201821656A (zh) 2018-06-16
TWI770769B (zh) 2022-07-11
TW202244337A (zh) 2022-11-16
EP3353339A1 (fr) 2018-08-01
CN108463580A (zh) 2018-08-28
CN108463580B (zh) 2021-11-12
WO2017053883A1 (fr) 2017-03-30
CN114000197A (zh) 2022-02-01
TW202117101A (zh) 2021-05-01
TWI820738B (zh) 2023-11-01

Similar Documents

Publication Publication Date Title
EP3353339A4 (fr) Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté
EP3400607A4 (fr) Dépôt en phase vapeur de films contenant du silicium à l'aide de disilanes penta-substitués
EP3197845A4 (fr) Materiaux de carbure de silicium derives de polysilocarb de haute purete, applications et procedes
EP3717520A4 (fr) Procédé permettant de détecter une instabilité de microsatellites
EP3228733A4 (fr) Procédé de production d'un monocristal de carbure de silicium et substrat monocristallin de carbure de silicium
EP3237017A4 (fr) Systèmes et procédés de modification et de régulation du génome
EP3213487A4 (fr) Authentification multi-facteurs destinée à une connexion unique
EP3143657A4 (fr) Dépôt de silicium sur des nanofils commandé de manière structurelle
EP3209653A4 (fr) Procédé de préparation de (r,s)-nicotine
EP3195172A4 (fr) Blocage de tolérance au ddos
EP3130301A4 (fr) Système de traitement au plasma
EP3338306A4 (fr) Composite de carbure de silicium/graphite et articles et assemblages comprenant ce dernier
EP3130302A4 (fr) Système de traitement au plasma
EP3222759A4 (fr) Procédé de traitement de surface pour substrat de sic
EP3223303A4 (fr) Procédé de gravure de substrat en sic et récipient de retenue
EP3239351A4 (fr) Dispositif de cvd assisté par plasma
EP3143551A4 (fr) Authentification à porter sur soi
EP3174573A4 (fr) Séparation de plasma assistée par le vide
EP3383144A4 (fr) Réacteur à plasma
EP3093368A4 (fr) Dispositif de dépôt chimique en phase vapeur et procédé de dépôt chimique en phase vapeur
EP3247180A4 (fr) Substrat céramique
EP3171392A4 (fr) Procédé de production de plaquettes de carbure de silicium épitaxiques
EP3412800A4 (fr) Substrat épitaxial
EP3181737A4 (fr) Substrat en alumine
EP3148540A4 (fr) Procédé pour la préparation de peptides cycliques

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180424

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LAND, MARK S.

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: C30B0025000000

Ipc: C30B0023020000

A4 Supplementary search report drawn up and despatched

Effective date: 20190410

RIC1 Information provided on ipc code assigned before grant

Ipc: C30B 35/00 20060101ALI20190404BHEP

Ipc: C30B 29/36 20060101ALI20190404BHEP

Ipc: C30B 23/02 20060101AFI20190404BHEP

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: PALLIDUS, INC.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20200713

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230526

REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20231215