EP3353339A4 - Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté - Google Patents
Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté Download PDFInfo
- Publication number
- EP3353339A4 EP3353339A4 EP16849805.3A EP16849805A EP3353339A4 EP 3353339 A4 EP3353339 A4 EP 3353339A4 EP 16849805 A EP16849805 A EP 16849805A EP 3353339 A4 EP3353339 A4 EP 3353339A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- techniques
- vapor deposition
- silicon carbide
- high purity
- deposition apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title 1
- 229920000642 polymer Polymers 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 238000007740 vapor deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP24168962.9A EP4407079A2 (fr) | 2015-09-24 | 2016-09-23 | Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562232355P | 2015-09-24 | 2015-09-24 | |
PCT/US2016/053567 WO2017053883A1 (fr) | 2015-09-24 | 2016-09-23 | Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP24168962.9A Division EP4407079A2 (fr) | 2015-09-24 | 2016-09-23 | Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3353339A1 EP3353339A1 (fr) | 2018-08-01 |
EP3353339A4 true EP3353339A4 (fr) | 2019-05-08 |
Family
ID=58387445
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16849805.3A Ceased EP3353339A4 (fr) | 2015-09-24 | 2016-09-23 | Appareil de dépôt en phase vapeur et techniques faisant intervenir du carbure de silicium dérivé de polymère haute pureté |
EP24168962.9A Pending EP4407079A2 (fr) | 2015-09-24 | 2016-09-23 | Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP24168962.9A Pending EP4407079A2 (fr) | 2015-09-24 | 2016-09-23 | Appareil et techniques de depot en phase vapeur utilisant du carbure de silicium derive d'un polymere de haute purete |
Country Status (4)
Country | Link |
---|---|
EP (2) | EP3353339A4 (fr) |
CN (2) | CN114000197A (fr) |
TW (4) | TWI719164B (fr) |
WO (1) | WO2017053883A1 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3382068B1 (fr) * | 2017-03-29 | 2022-05-18 | SiCrystal GmbH | Substrat de carbure de silicium et procédé de croissance de lingots monocristallins de sic |
EP3382067B1 (fr) * | 2017-03-29 | 2021-08-18 | SiCrystal GmbH | Substrat de carbure de silicium et procédé de croissance de lingots monocristallins de sic |
CN110921670B (zh) * | 2018-09-19 | 2022-01-07 | 比亚迪股份有限公司 | 碳化硅及其制备方法 |
WO2020203516A1 (fr) | 2019-03-29 | 2020-10-08 | 学校法人関西学院 | Dispositif de fabrication de substrat semi-conducteur comprenant des moyens d'inversion de gradient de température et procédé de fabrication de substrat semi-conducteur |
CN110396717B (zh) * | 2019-07-12 | 2020-07-28 | 山东天岳先进材料科技有限公司 | 高质量高纯半绝缘碳化硅单晶、衬底及其制备方法 |
TWI698397B (zh) | 2019-11-11 | 2020-07-11 | 財團法人工業技術研究院 | 碳化矽粉體的純化方法 |
EP4081674A1 (fr) * | 2019-12-27 | 2022-11-02 | Wolfspeed, Inc. | Tranches de carbure de silicium de grand diamètre |
US12006591B2 (en) | 2020-03-02 | 2024-06-11 | Ii-Vi Advanced Materials, Llc | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material |
CN111270304A (zh) * | 2020-03-27 | 2020-06-12 | 江苏超芯星半导体有限公司 | 一种制备4h碳化硅单晶的方法 |
CN113818081A (zh) * | 2020-06-18 | 2021-12-21 | 盛新材料科技股份有限公司 | 半绝缘单晶碳化硅块材以及粉末 |
TWI771183B (zh) * | 2020-10-20 | 2022-07-11 | 環球晶圓股份有限公司 | 碳化矽晶圓的拋光方法 |
US20230064070A1 (en) * | 2021-08-30 | 2023-03-02 | Auo Crystal Corporation | Semiconductor processing equipment part and method for making the same |
CN114804113B (zh) * | 2022-05-26 | 2024-02-02 | 哈尔滨晶彩材料科技有限公司 | 杂化官能度硅烷无引发悬浮聚合制备高纯SiC多晶源粉的方法 |
Citations (4)
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GB2301349A (en) * | 1995-05-31 | 1996-12-04 | Bridgestone Corp | Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal. |
US20120192790A1 (en) * | 2009-06-22 | 2012-08-02 | Zhizhan Chen | Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals |
US20130161647A1 (en) * | 2011-12-26 | 2013-06-27 | Sumitomo Electric Industries, Ltd. | Ingot, substrate, and substrate group |
WO2016049344A2 (fr) * | 2014-09-25 | 2016-03-31 | Melior Innovations, Inc. | Matériaux, applications et dispositifs de carbure de silicium à base de polysilocarb |
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US34861A (en) | 1862-04-01 | Improved washing-machine | ||
NL87348C (fr) | 1954-03-19 | 1900-01-01 | ||
US3228756A (en) | 1960-05-20 | 1966-01-11 | Transitron Electronic Corp | Method of growing single crystal silicon carbide |
US3236780A (en) | 1962-12-19 | 1966-02-22 | Gen Electric | Luminescent silicon carbide and preparation thereof |
NL6615060A (fr) | 1966-10-25 | 1968-04-26 | ||
US3962406A (en) | 1967-11-25 | 1976-06-08 | U.S. Philips Corporation | Method of manufacturing silicon carbide crystals |
US4147572A (en) | 1976-10-18 | 1979-04-03 | Vodakov Jury A | Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique |
DE3230727C2 (de) | 1982-08-18 | 1987-02-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von Einkristallen aus Siliziumkarbid SiC |
US4556436A (en) | 1984-08-22 | 1985-12-03 | The United States Of America As Represented By The Secretary Of The Navy | Method of preparing single crystalline cubic silicon carbide layers |
US4664944A (en) | 1986-01-31 | 1987-05-12 | The United States Of America As Represented By The United States Department Of Energy | Deposition method for producing silicon carbide high-temperature semiconductors |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US5180694A (en) | 1989-06-01 | 1993-01-19 | General Electric Company | Silicon-oxy-carbide glass method of preparation and articles |
US5611955A (en) | 1993-10-18 | 1997-03-18 | Northrop Grumman Corp. | High resistivity silicon carbide substrates for high power microwave devices |
JP3491402B2 (ja) | 1995-08-07 | 2004-01-26 | 株式会社デンソー | 単結晶製造方法及びその単結晶製造装置 |
US5762896A (en) | 1995-08-31 | 1998-06-09 | C3, Inc. | Silicon carbide gemstones |
US5683507A (en) | 1995-09-05 | 1997-11-04 | Northrop Grumman Corporation | Apparatus for growing large silicon carbide single crystals |
US5746827A (en) | 1995-12-27 | 1998-05-05 | Northrop Grumman Corporation | Method of producing large diameter silicon carbide crystals |
RU2094547C1 (ru) | 1996-01-22 | 1997-10-27 | Юрий Александрович Водаков | Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа |
US5667587A (en) | 1996-12-18 | 1997-09-16 | Northrop Gruman Corporation | Apparatus for growing silicon carbide crystals |
JP3958397B2 (ja) * | 1997-02-17 | 2007-08-15 | 東洋炭素株式会社 | 化学気相蒸着炭化ケイ素材の製造方法 |
US5873937A (en) | 1997-05-05 | 1999-02-23 | Northrop Grumman Corporation | Method of growing 4H silicon carbide crystal |
US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
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WO2003100123A1 (fr) * | 2002-05-23 | 2003-12-04 | UNIVERSITé DE SHERBROOKE | Depot de films ceramiques minces sur differents substrats et leur procede d'obtention |
US7485570B2 (en) | 2002-10-30 | 2009-02-03 | Fujitsu Limited | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device |
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JP2013212952A (ja) | 2012-04-02 | 2013-10-17 | Sumitomo Electric Ind Ltd | 炭化珪素単結晶の製造方法 |
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DE102013006118B3 (de) * | 2013-04-10 | 2014-04-03 | FCT Hartbearbeitungs GmbH | Herstellung hochreiner, dichter Siliziumcarbid-Sinterkörper und so erhältliche Sinterkörper |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
US20160207783A1 (en) * | 2013-05-02 | 2016-07-21 | Melior Innovations, Inc. | High purity polysilocarb derived silicon carbide materials, applications and processes |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US8981564B2 (en) | 2013-05-20 | 2015-03-17 | Invensas Corporation | Metal PVD-free conducting structures |
EP3110895A4 (fr) * | 2014-02-28 | 2018-04-25 | Melior Innovations Inc. | Matériaux de type polysilocarb, procédés et utilisations |
CN103833035B (zh) * | 2014-03-06 | 2017-01-11 | 台州市一能科技有限公司 | 一种碳化硅的制备方法 |
-
2016
- 2016-09-23 EP EP16849805.3A patent/EP3353339A4/fr not_active Ceased
- 2016-09-23 CN CN202111220327.6A patent/CN114000197A/zh active Pending
- 2016-09-23 CN CN201680067713.7A patent/CN108463580B/zh active Active
- 2016-09-23 EP EP24168962.9A patent/EP4407079A2/fr active Pending
- 2016-09-23 WO PCT/US2016/053567 patent/WO2017053883A1/fr active Application Filing
-
2017
- 2017-03-17 TW TW106108822A patent/TWI719164B/zh active
- 2017-03-17 TW TW111121236A patent/TWI820738B/zh active
- 2017-03-17 TW TW110101573A patent/TWI770769B/zh active
- 2017-03-17 TW TW112147396A patent/TW202413743A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2301349A (en) * | 1995-05-31 | 1996-12-04 | Bridgestone Corp | Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal. |
US20120192790A1 (en) * | 2009-06-22 | 2012-08-02 | Zhizhan Chen | Apparatus with Two-Chamber Structure for Growing Silicon Carbide Crystals |
US20130161647A1 (en) * | 2011-12-26 | 2013-06-27 | Sumitomo Electric Industries, Ltd. | Ingot, substrate, and substrate group |
WO2016049344A2 (fr) * | 2014-09-25 | 2016-03-31 | Melior Innovations, Inc. | Matériaux, applications et dispositifs de carbure de silicium à base de polysilocarb |
Also Published As
Publication number | Publication date |
---|---|
EP4407079A2 (fr) | 2024-07-31 |
TW202413743A (zh) | 2024-04-01 |
TWI719164B (zh) | 2021-02-21 |
TW201821656A (zh) | 2018-06-16 |
TWI770769B (zh) | 2022-07-11 |
TW202244337A (zh) | 2022-11-16 |
EP3353339A1 (fr) | 2018-08-01 |
CN108463580A (zh) | 2018-08-28 |
CN108463580B (zh) | 2021-11-12 |
WO2017053883A1 (fr) | 2017-03-30 |
CN114000197A (zh) | 2022-02-01 |
TW202117101A (zh) | 2021-05-01 |
TWI820738B (zh) | 2023-11-01 |
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