EP3329748A1 - Chambres pour génération de plasma hyperfréquence - Google Patents

Chambres pour génération de plasma hyperfréquence

Info

Publication number
EP3329748A1
EP3329748A1 EP16832383.0A EP16832383A EP3329748A1 EP 3329748 A1 EP3329748 A1 EP 3329748A1 EP 16832383 A EP16832383 A EP 16832383A EP 3329748 A1 EP3329748 A1 EP 3329748A1
Authority
EP
European Patent Office
Prior art keywords
microwave
section
chamber
capacitive loaded
loaded section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16832383.0A
Other languages
German (de)
English (en)
Other versions
EP3329748B1 (fr
EP3329748A4 (fr
Inventor
Mike Hammer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2015903047A external-priority patent/AU2015903047A0/en
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of EP3329748A1 publication Critical patent/EP3329748A1/fr
Publication of EP3329748A4 publication Critical patent/EP3329748A4/fr
Application granted granted Critical
Publication of EP3329748B1 publication Critical patent/EP3329748B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/443—Emission spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

Definitions

  • a further improved impedance match may be achieved by positioning the plasma torch 300 relatively close to the microwave cut-off structure 232 which acts as a short circuit at the second end 230 of the microwave chamber 200 at the second end 230.
  • the ratio of the electric to magnetic field intensity can be controlled by adjusting the positioning the plasma torch 300 relative to the microwave cut-off structure 232.
  • the microwave cutoff structure 232 has a zero impedance point at the short circuit (zero electric field and maximal magnetic field aligned along the width of the guide) and the impedance progressively rises from the second end 230 toward the first end 220, increasing electric field E and decreasing magnetic field H.
  • the tapered ridge 218a of the impedance matching section 222 also flares or tapers outwardly so that its height increases along the longitudinal axis of the chamber 200.
  • the ridge height (H R ) of the ridge 218 increases as it extends along the longitudinal axis of the chamber 200 from the impedance matching section 222 towards the capacitive loaded section 224.
  • the increasing dimensions of the tapered ridge 218a along the longitudinal axis of the chamber 200 allow microwaves from the first end section 220a to propagate through the impedance matching section 222 and into the capacitive loaded section 224 even though the cavity width (W C ) of the chamber 200 is reducing along the longitudinal axis of the chamber 200.
  • the variation in the electric field strength in the plasma in the side closer to the second end 230 (further along the z direction) is much less than the variation on the side closer to the first end 220. Therefore, in embodiments with the recess 227 located as shown in Figures 9a and 9b, there may be a more uniform electric field strength in the plasma.
  • the shape defined by recess 227 may have an area that is larger than the cross- sectional area of the torch 300 in order to receive the torch 300 in the recess 227.
  • the method further comprises substantially blocking propagation of microwave energy through a second end 230 of the chamber while allowing passage of optical light through an end aperture 240 disposed in the second end, at 708.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne une chambre à micro-ondes pour la génération de plasma. La chambre à micro-ondes comprend une structure de lancement à une première extrémité de la chambre à micro-ondes pour loger une source de micro-ondes destinée à produire de l'énergie hyperfréquence, et une section de terminaison à une seconde extrémité de la chambre à micro-ondes, à l'opposé de la première extrémité. La section de terminaison est configurée pour bloquer sensiblement la propagation de l'énergie hyperfréquence à partir de la seconde extrémité de la chambre. La chambre à micro-ondes comprend en outre une structure de paroi interne pour guider vers la seconde extrémité l'énergie hyperfréquence reçue à l'intérieur de la chambre à micro-ondes au niveau de la première extrémité, et délimite une cavité. La structure de paroi interne comprend une section d'adaptation d'impédance entre la première extrémité et la seconde extrémité, et une section chargée capacitive entre la section d'adaptation d'impédance et la seconde extrémité, la section chargée capacitive comprenant au moins une arête s'étendant le long d'un axe longitudinal de la chambre. La chambre à micro-ondes délimite une première ouverture s'étendant à travers une première paroi de la section chargée capacitive et une seconde ouverture s'étendant à travers une seconde paroi de la section chargée capacitive. La seconde paroi est en regard de la première paroi. La première ouverture et la seconde ouverture sont conçues pour coopérer l'une avec l'autre afin de recevoir une torche à plasma dans la section chargée capacitive le long d'un axe passant par la première ouverture et la seconde ouverture et sensiblement perpendiculaire à l'axe longitudinal de la chambre.
EP16832383.0A 2015-07-31 2016-07-20 Chambres pour génération de plasma par micro-ondes et procédés associés Active EP3329748B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2015903047A AU2015903047A0 (en) 2015-07-31 Chambers for microwave plasma generation
PCT/IB2016/054300 WO2017021808A1 (fr) 2015-07-31 2016-07-20 Chambres pour génération de plasma hyperfréquence

Publications (3)

Publication Number Publication Date
EP3329748A1 true EP3329748A1 (fr) 2018-06-06
EP3329748A4 EP3329748A4 (fr) 2019-03-27
EP3329748B1 EP3329748B1 (fr) 2022-02-09

Family

ID=57943817

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16832383.0A Active EP3329748B1 (fr) 2015-07-31 2016-07-20 Chambres pour génération de plasma par micro-ondes et procédés associés

Country Status (6)

Country Link
US (1) US10327321B2 (fr)
EP (1) EP3329748B1 (fr)
JP (1) JP6732006B2 (fr)
CN (1) CN107926107B (fr)
AU (1) AU2016304411B2 (fr)
WO (1) WO2017021808A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2018214488B2 (en) 2017-01-18 2022-05-26 Shine Technologies, Llc High power ion beam generator systems and methods
IT201800020206A1 (it) * 2018-12-19 2020-06-19 Directa Plus Spa Apparecchiatura per il trattamento di materiali con plasma.
GB2582948B (en) * 2019-04-10 2021-12-08 Thermo Fisher Scient Bremen Gmbh Plasma source chamber for a spectrometer
AT523626B1 (de) * 2020-05-22 2021-10-15 Anton Paar Gmbh Hohlleiter-Einkoppeleinheit

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456787A1 (fr) 1979-05-18 1980-12-12 Thomson Csf Dispositif hyperfrequence pour le depot de films minces sur des solides
US4965540A (en) * 1987-12-23 1990-10-23 Hewlett-Packard Company Microwave resonant cavity
DE4217900A1 (de) 1992-05-29 1993-12-02 Leybold Ag Anordnung einer mikrowellendurchlässigen Scheibe in einem Hohlleiter und Verfahren zur Einbringung dieser Scheibe
US5389153A (en) * 1993-02-19 1995-02-14 Texas Instruments Incorporated Plasma processing system using surface wave plasma generating apparatus and method
TW285746B (fr) * 1994-10-26 1996-09-11 Matsushita Electric Ind Co Ltd
WO2001093315A2 (fr) 2000-05-25 2001-12-06 Jewett Russell F Procedes et appareillages de traitement par plasma
AUPQ861500A0 (en) 2000-07-06 2000-08-03 Varian Australia Pty Ltd Plasma source for spectrometry
JP3727620B2 (ja) 2002-09-03 2005-12-14 株式会社日立ハイテクノロジーズ 計測用窓部を備えたプラズマ処理装置
WO2004026096A2 (fr) * 2002-09-19 2004-04-01 Tokyo Electron Limited Appareil de nettoyage pour hublot d'observation
US7091441B1 (en) * 2004-03-19 2006-08-15 Polytechnic University Portable arc-seeded microwave plasma torch
FR2880236B1 (fr) * 2004-12-23 2007-03-30 Air Liquide Excitateurs de plasmas micro-ondes
US8013269B2 (en) * 2005-01-28 2011-09-06 Tekna Plasma Systems Inc. Induction plasma synthesis of nanopowders
KR20100062715A (ko) 2008-12-02 2010-06-10 (주)트리플코어스코리아 상압 플라즈마 발생 장치 및 이를 이용한 상압 플라즈마 발생 방법
KR100965491B1 (ko) * 2009-11-02 2010-06-24 박영배 복합 플라스마 발생장치
US9247629B2 (en) 2013-03-15 2016-01-26 Agilent Technologies, Inc. Waveguide-based apparatus for exciting and sustaining a plasma
US9427821B2 (en) * 2013-03-15 2016-08-30 Agilent Technologies, Inc. Integrated magnetron plasma torch, and related methods
KR101468923B1 (ko) 2013-05-29 2014-12-22 주식회사 애니텍 마이크로웨이브 플라즈마를 이용한 톨루엔 연소분해장치 및 톨루엔을 이용한 화염 증폭 기능을 구비한 연소분해장치
JP6127276B2 (ja) * 2014-02-04 2017-05-17 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
US9345121B2 (en) * 2014-03-28 2016-05-17 Agilent Technologies, Inc. Waveguide-based apparatus for exciting and sustaining a plasma
JP6295439B2 (ja) * 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法

Also Published As

Publication number Publication date
CN107926107A (zh) 2018-04-17
US10327321B2 (en) 2019-06-18
WO2017021808A1 (fr) 2017-02-09
AU2016304411B2 (en) 2021-01-07
EP3329748B1 (fr) 2022-02-09
JP6732006B2 (ja) 2020-07-29
EP3329748A4 (fr) 2019-03-27
JP2018523271A (ja) 2018-08-16
US20180228012A1 (en) 2018-08-09
CN107926107B (zh) 2020-07-03
AU2016304411A1 (en) 2018-03-15

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