EP3317432A4 - Impulserzeugungsvorrichtung und -verfahren für magnetron-sputter-system - Google Patents

Impulserzeugungsvorrichtung und -verfahren für magnetron-sputter-system Download PDF

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Publication number
EP3317432A4
EP3317432A4 EP15897286.9A EP15897286A EP3317432A4 EP 3317432 A4 EP3317432 A4 EP 3317432A4 EP 15897286 A EP15897286 A EP 15897286A EP 3317432 A4 EP3317432 A4 EP 3317432A4
Authority
EP
European Patent Office
Prior art keywords
generation device
magnetron sputtering
pulse generation
sputtering system
magnetron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15897286.9A
Other languages
English (en)
French (fr)
Other versions
EP3317432A1 (de
Inventor
Mykola STYERVOYEDOV
Sergiy STYERVOYEDOV
Andriy STYERVOYEDOV
Vozniy OLEKSIY
Johanna ROSÉN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP3317432A1 publication Critical patent/EP3317432A1/de
Publication of EP3317432A4 publication Critical patent/EP3317432A4/de
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
EP15897286.9A 2015-07-02 2015-07-02 Impulserzeugungsvorrichtung und -verfahren für magnetron-sputter-system Withdrawn EP3317432A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SE2015/050779 WO2017003339A1 (en) 2015-07-02 2015-07-02 Pulse generation device and method for a magnetron sputtering system

Publications (2)

Publication Number Publication Date
EP3317432A1 EP3317432A1 (de) 2018-05-09
EP3317432A4 true EP3317432A4 (de) 2018-07-04

Family

ID=57608555

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15897286.9A Withdrawn EP3317432A4 (de) 2015-07-02 2015-07-02 Impulserzeugungsvorrichtung und -verfahren für magnetron-sputter-system

Country Status (2)

Country Link
EP (1) EP3317432A4 (de)
WO (1) WO2017003339A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3639356A4 (de) 2017-06-12 2021-03-03 Starfire Industries LLC Gepulstes leistungsmodul mit impuls- und ionenflussregelung für magnetron-sputtern
TW202340495A (zh) 2019-02-11 2023-10-16 美商應用材料股份有限公司 物理氣相沉積方法
US20230124940A1 (en) * 2020-03-10 2023-04-20 Slovenka Technicka Univerzita V. Bratilasve Connection of high-performance pulse discharge plasma generator, especially for magnetron sputtering

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2437080A (en) * 2006-04-11 2007-10-17 Hauzer Techno Coating Bv Vacuum treatment apparatus with additional voltage supply
EP2325349A1 (de) * 2008-09-08 2011-05-25 Kabushiki Kaisha Kobe Seiko Sho Sputter-vorrichtung
US20140265852A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Dual Control Modes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003022524A (ja) * 2001-07-06 2003-01-24 National Institute Of Advanced Industrial & Technology 磁気記録材料用基板の製造方法及び磁気記録材料
JP2005521202A (ja) * 2002-03-15 2005-07-14 ユナキス・バルツェルス・アクチェンゲゼルシャフト 真空プラズマ発生器
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
KR101447302B1 (ko) * 2006-12-12 2014-10-06 오를리콘 어드벤스드 테크놀로지스 아크티엔게젤샤프트 고전력 임펄스 마그네트론 스퍼터링(ｈｉｐｉｍｓ)에서의 아크 억제 및 펄싱
DE102008057286B3 (de) * 2008-11-14 2010-05-20 Systec System- Und Anlagentechnik Gmbh & Co. Kg Verfahren und Vorrichtung zur PVD-Beschichtung mit schaltbarer Biasspannung
US20110005920A1 (en) * 2009-07-13 2011-01-13 Seagate Technology Llc Low Temperature Deposition of Amorphous Thin Films
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2437080A (en) * 2006-04-11 2007-10-17 Hauzer Techno Coating Bv Vacuum treatment apparatus with additional voltage supply
EP2325349A1 (de) * 2008-09-08 2011-05-25 Kabushiki Kaisha Kobe Seiko Sho Sputter-vorrichtung
US20140265852A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Dual Control Modes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017003339A1 *

Also Published As

Publication number Publication date
EP3317432A1 (de) 2018-05-09
WO2017003339A1 (en) 2017-01-05

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