EP3311418A4 - Réduction de résistance dans des transistors ayant des régions de source/drain obtenues par croissance épitaxiale - Google Patents
Réduction de résistance dans des transistors ayant des régions de source/drain obtenues par croissance épitaxiale Download PDFInfo
- Publication number
- EP3311418A4 EP3311418A4 EP15895827.2A EP15895827A EP3311418A4 EP 3311418 A4 EP3311418 A4 EP 3311418A4 EP 15895827 A EP15895827 A EP 15895827A EP 3311418 A4 EP3311418 A4 EP 3311418A4
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- EP
- European Patent Office
- Prior art keywords
- transistors
- drain regions
- epitaxially grown
- resistance reduction
- grown source
- Prior art date
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2015/036688 WO2016204786A1 (fr) | 2015-06-19 | 2015-06-19 | Réduction de résistance dans des transistors ayant des régions de source/drain obtenues par croissance épitaxiale |
Publications (2)
Publication Number | Publication Date |
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EP3311418A1 EP3311418A1 (fr) | 2018-04-25 |
EP3311418A4 true EP3311418A4 (fr) | 2019-01-09 |
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Family Applications (1)
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EP15895827.2A Pending EP3311418A4 (fr) | 2015-06-19 | 2015-06-19 | Réduction de résistance dans des transistors ayant des régions de source/drain obtenues par croissance épitaxiale |
Country Status (6)
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US (1) | US20180151732A1 (fr) |
EP (1) | EP3311418A4 (fr) |
KR (1) | KR102384196B1 (fr) |
CN (1) | CN107743656A (fr) |
TW (1) | TWI706467B (fr) |
WO (1) | WO2016204786A1 (fr) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016200402A1 (fr) * | 2015-06-12 | 2016-12-15 | Intel Corporation | Techniques de formation de transistors sur la même puce avec divers matériaux de canal |
EP3363050B1 (fr) | 2015-07-23 | 2020-07-08 | Artilux Inc. | Capteur à spectre étendu et à efficacité élevée |
US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
EP3709362B1 (fr) | 2015-08-04 | 2021-07-14 | Artilux Inc. | Procédé de détection de lumière à base de germanium-silicium |
US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
WO2019005059A1 (fr) * | 2017-06-29 | 2019-01-03 | Intel Corporation | Régulation des fuites de sous-ailette dans des dispositifs à semi-conducteur |
WO2019009871A1 (fr) * | 2017-07-01 | 2019-01-10 | Intel Corporation | Structures de métallisation sous une couche de dispositifs semi-conducteurs |
US10332985B2 (en) * | 2017-08-31 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
CN111868929B (zh) | 2018-02-23 | 2021-08-03 | 奥特逻科公司 | 光检测装置及其光检测方法 |
CN112236686B (zh) | 2018-04-08 | 2022-01-07 | 奥特逻科公司 | 光探测装置 |
US10854770B2 (en) | 2018-05-07 | 2020-12-01 | Artilux, Inc. | Avalanche photo-transistor |
US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
US10497796B1 (en) | 2018-05-31 | 2019-12-03 | International Business Machines Corporation | Vertical transistor with reduced gate length variation |
KR20200018863A (ko) * | 2018-08-13 | 2020-02-21 | 삼성전자주식회사 | 반도체 장치 |
US11448830B2 (en) | 2018-12-12 | 2022-09-20 | Artilux, Inc. | Photo-detecting apparatus with multi-reset mechanism |
KR20200136688A (ko) | 2019-05-28 | 2020-12-08 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
EP3754369A1 (fr) | 2019-06-19 | 2020-12-23 | Artilux Inc. | Appareil de photodétection avec réutilisation du courant |
US11335552B2 (en) * | 2020-04-17 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with oxide semiconductor channel |
KR20220020715A (ko) | 2020-08-12 | 2022-02-21 | 삼성전자주식회사 | 집적회로 소자 |
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US20130207166A1 (en) * | 2012-02-10 | 2013-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition |
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US20150137193A1 (en) * | 2013-11-19 | 2015-05-21 | International Business Machines Corporation | Finfet structures with fins recessed beneath the gate |
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US8598003B2 (en) * | 2009-12-21 | 2013-12-03 | Intel Corporation | Semiconductor device having doped epitaxial region and its methods of fabrication |
KR101205136B1 (ko) * | 2010-12-17 | 2012-11-26 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 형성 방법 |
US8659089B2 (en) * | 2011-10-06 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitrogen passivation of source and drain recesses |
US9159811B2 (en) * | 2013-12-18 | 2015-10-13 | International Business Machines Corporation | Growing buffer layers in bulk finFET structures |
JP2015206912A (ja) * | 2014-04-21 | 2015-11-19 | オリンパス株式会社 | 光ファイバの接続アダプタおよび内視鏡装置 |
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2015
- 2015-06-19 US US15/575,008 patent/US20180151732A1/en not_active Abandoned
- 2015-06-19 EP EP15895827.2A patent/EP3311418A4/fr active Pending
- 2015-06-19 CN CN201580081034.0A patent/CN107743656A/zh active Pending
- 2015-06-19 WO PCT/US2015/036688 patent/WO2016204786A1/fr active Application Filing
- 2015-06-19 KR KR1020177033116A patent/KR102384196B1/ko active IP Right Grant
-
2016
- 2016-05-12 TW TW105114729A patent/TWI706467B/zh active
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US20080124878A1 (en) * | 2006-11-28 | 2008-05-29 | Cook Ted E | Multi-component strain-inducing semiconductor regions |
US20130240989A1 (en) * | 2010-12-21 | 2013-09-19 | Glenn A. Glass | Selective germanium p-contact metalization through trench |
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US20130207166A1 (en) * | 2012-02-10 | 2013-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Doped SiGe Source/Drain Stressor Deposition |
US20150093868A1 (en) * | 2013-09-27 | 2015-04-02 | Borna J. Obradovic | Integrated circuit devices including finfets and methods of forming the same |
US20150137193A1 (en) * | 2013-11-19 | 2015-05-21 | International Business Machines Corporation | Finfet structures with fins recessed beneath the gate |
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Also Published As
Publication number | Publication date |
---|---|
US20180151732A1 (en) | 2018-05-31 |
TWI706467B (zh) | 2020-10-01 |
KR102384196B1 (ko) | 2022-04-08 |
CN107743656A (zh) | 2018-02-27 |
EP3311418A1 (fr) | 2018-04-25 |
KR20180018506A (ko) | 2018-02-21 |
WO2016204786A1 (fr) | 2016-12-22 |
TW201712759A (en) | 2017-04-01 |
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