EP3295769A4 - Method for optimizing efficiency of optical semiconductor devices - Google Patents

Method for optimizing efficiency of optical semiconductor devices Download PDF

Info

Publication number
EP3295769A4
EP3295769A4 EP15899527.4A EP15899527A EP3295769A4 EP 3295769 A4 EP3295769 A4 EP 3295769A4 EP 15899527 A EP15899527 A EP 15899527A EP 3295769 A4 EP3295769 A4 EP 3295769A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor devices
optical semiconductor
optimizing efficiency
optimizing
efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15899527.4A
Other languages
German (de)
French (fr)
Other versions
EP3295769A1 (en
Inventor
István ABONYI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP3295769A1 publication Critical patent/EP3295769A1/en
Publication of EP3295769A4 publication Critical patent/EP3295769A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/053—Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
EP15899527.4A 2015-07-27 2015-07-27 Method for optimizing efficiency of optical semiconductor devices Withdrawn EP3295769A4 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2015/001263 WO2017017482A1 (en) 2015-07-27 2015-07-27 Method for optimizing efficiency of optical semiconductor devices

Publications (2)

Publication Number Publication Date
EP3295769A1 EP3295769A1 (en) 2018-03-21
EP3295769A4 true EP3295769A4 (en) 2018-12-05

Family

ID=57885438

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15899527.4A Withdrawn EP3295769A4 (en) 2015-07-27 2015-07-27 Method for optimizing efficiency of optical semiconductor devices

Country Status (2)

Country Link
EP (1) EP3295769A4 (en)
WO (1) WO2017017482A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050134212A1 (en) * 2003-12-04 2005-06-23 Chia-Chang Chuang Solar energy pulse charge device
US20090153076A1 (en) * 2007-12-14 2009-06-18 Delta Electronics, Inc. Driving circuit and method for reducing operating temperature of led package
KR101003072B1 (en) * 2010-06-18 2010-12-21 테크원 주식회사 Photovoltaic illumination controlling method thereof
US20140015431A1 (en) * 2010-10-15 2014-01-16 New Lighting Technology Limited Illumination apparatus and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193741B2 (en) * 2009-12-24 2012-06-05 Nxp B.V. Boosting driver circuit for light-emitting diodes
DE102010016138A1 (en) * 2010-03-25 2011-09-29 Refu Elektronik Gmbh Solar inverter for extended irradiation value range and operating method
US9035626B2 (en) * 2010-08-18 2015-05-19 Volterra Semiconductor Corporation Switching circuits for extracting power from an electric power source and associated methods
GB2496139B (en) * 2011-11-01 2016-05-04 Solarcity Corp Photovoltaic power conditioning units

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050134212A1 (en) * 2003-12-04 2005-06-23 Chia-Chang Chuang Solar energy pulse charge device
US20090153076A1 (en) * 2007-12-14 2009-06-18 Delta Electronics, Inc. Driving circuit and method for reducing operating temperature of led package
KR101003072B1 (en) * 2010-06-18 2010-12-21 테크원 주식회사 Photovoltaic illumination controlling method thereof
US20140015431A1 (en) * 2010-10-15 2014-01-16 New Lighting Technology Limited Illumination apparatus and method

Also Published As

Publication number Publication date
EP3295769A1 (en) 2018-03-21
WO2017017482A1 (en) 2017-02-02

Similar Documents

Publication Publication Date Title
EP3271937A4 (en) Method for transfer of semiconductor devices
EP3379588A4 (en) Semiconductor device manufacturing method
SG10201603714RA (en) Wafer producing method
EP3210070A4 (en) Method for modifying power of light adjustable lens
SG10201602619YA (en) Method of dividing wafer
SG10201600555UA (en) Wafer producing method
SG10201600557XA (en) Wafer producing method
SG10201510273SA (en) Wafer producing method
SG10201510271QA (en) Wafer producing method
SG10201601981YA (en) Wafer producing method
TWI800057B (en) Method for manufacturing semiconductor device
EP3379306A4 (en) Silicon optical circuit
EP3457445A4 (en) Production method for optical semiconductor device
EP3279924A4 (en) Semiconductor device manufacturing method
EP3104411A4 (en) Semiconductor module
HUE051760T2 (en) Method of manufacturing a semiconductor module
EP3196928A4 (en) Method for manufacturing substrate for power module
EP3163608A4 (en) Semiconductor module and production method for semiconductor module
EP3306653A4 (en) Semiconductor wafer evaluation method
EP3104395A4 (en) Method for manufacturing laminated wafer
PT2974822T (en) Method of dicing thin semiconductor substrates
EP3101160A4 (en) Semiconductor substrate manufacturing method
SG10201602315RA (en) Method of dividing wafer
EP3358684A4 (en) Semiconductor laser device
EP3332960A4 (en) Method for manufacturing optical member

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20171208

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20181029

RIC1 Information provided on ipc code assigned before grant

Ipc: H05B 33/08 20060101AFI20181023BHEP

Ipc: H01L 31/02 20060101ALI20181023BHEP

Ipc: H01L 31/053 20140101ALI20181023BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20190528