EP3294922A1

EP3294922A1 - Machining tool

Info

Publication number: EP3294922A1
Application number: EP16747721.5A
Authority: EP
Inventors: Stefan Sattel; Immo Garrn; Manfred Schwenck
Original assignee: Guehring KG
Current assignee: Guehring KG
Priority date: 2015-05-12
Filing date: 2016-05-10
Publication date: 2018-03-21
Also published as: US20180126466A1; WO2016180393A1; DE102015208742A1; WO2016180393A9

Abstract

The present invention relates to a machining tool having a substrate surface made of a hard metal or a ceramic material, said substrate surface containing hard material particles on the basis of carbide and/or nitride and/or oxide that are embedded in a cobalt-containing binder matrix, and the substrate surface being smoothened. The substrate surface of the machining tool can be smoothened by way of a treatment with an ion beam that consists of monomer ions of at least one cation species, the cation species being mono- or poly-charged and being selected from the group consisting of: cations of the main group elements lithium, boron, aluminum, gallium, carbon, silicon, germanium, nitrogen, phosphorus and oxygen; and cations of the transition metals titanium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel and copper.

Description

description

Machining tool

The present invention relates to a cutting tool according to the preamble of claim 1.

Tools for machining with a tool head, a tool shank and with a clamping section for receiving in one

Tool holder are known in a variety of forms from the prior art.

Such tools have in their cutting part area on functional areas, which are adapted to the specific requirements of the materials to be processed.

The tools mentioned are, in particular, those which are designed as drilling, milling, countersinking, turning, threading, contouring or reaming tools, which can have cutting bodies or guide strips as a functional area, the cutting bodies being used, for example, as alternating or indexable inserts may be formed and the guide rails may be formed, for example, as a support strips.

Typically, such tool heads have functional areas that give the tool a high wear resistance in the machining of highly abrasive materials.

In DE 20 2005 021 817 111 of the present applicant

Tool heads are described, which consist of a hard material with at least one functional layer comprising a superhard material such as cubic boron nitride (CBN) or polycrystalline diamond (PCD).

CONFIRMATION COPY With such a tool, long service lives of the tools with regard to mechanical or thermal requirements for drilling, milling or rubbing can be achieved.

Methods of applying a polycrystalline film, particularly diamond material, to non-diamond substrates have also been known for a long time. For example, US 5,082,359 describes the deposition of a polycrystalline diamond film by chemical vapor deposition (CVD).

In the process described in this prior art document, a series of discrete nucleation sites, typically in the form of craters, are formed on the surface of the process to be coated.

These craters, which are used as germ cells for later

Diamond deposition, can be prepared by a number of methods according to US 5,082,359, for example by laser evaporation and chemical etching or plasma etching using a correspondingly patterned one

Photoresists or by removal by means of a focused ion beam (focused ion beam milling).

In US 5,082,359 it is disclosed that by means of a focused ion beam of Ga ⁺ at a kinetic energy of 25 KeV in the substrates

Focusing the Ga ⁺ ion beam can be produced to a diameter of less than 0.1 μιη crater with a distance of less than 1 pm, so quasi nanotubes can be performed in a workpiece.

As substrates in the US 5,082,359 typical materials used in the semiconductor industry are called, such as germanium, silicon, gallium arsenide and polished wafers of monocrystalline silicon, and other useful substrates are titanium, molybdenum, nickel, copper, tungsten, tantalum, steel, ceramics,

Silicon carbide, silicon nitride, silicon aluminum oxynitride, boron nitride, aluminum oxide, zinc sulfide, zinc selenide, tungsten carbide, graphite, quartz glass, glass and sapphire. Finally, CVD is performed by reacting methane and hydrogen under vacuum on a hot tungsten wire to deposit the carbon generated in high vacuum on the crater-like irregularities produced on the substrate surface in its diamond modification.

Furthermore, it is known for tools to provide functional surfaces with a diamond layer, whereby a CVD method is also used.

Such a diamond coating process is described, for example, in WO 98/35071 A1. In particular, the deposition of a polycrystalline diamond film on a cemented carbide substrate of tungsten carbide embedded in a cobalt matrix is described in WO 2004/031437 A1.

Typically, a hard metal includes sintered materials of hard material particles and bonding material, such as tungsten carbide grains, wherein the tungsten carbide grains form the hard materials and the cobalt-containing binder matrix acts as a binder to the WC grains and gives the layer the toughness required for the tool.

Diamond-coated carbide or cermet tools are effective

naturally positive for the wear protection of the tool as well as on its

Service life in continuous use.

For smoothing the surfaces of cemented carbide or cermet tools, different methods are known from the prior art. On the one hand, the conventional grinding of the surfaces with, for example, corundum or diamond abrasives and, on the other hand, chemical-mechanical polishing processes (CMP) in which additional etching and / or polishing abrasives are used. Such a CMP process is described for producing exact planarity for semiconductor surfaces, for example in US 2012/0217587 A1. In addition, there are also in the semiconductor field electropolishing, in which by means of current flow and suitable electrolytes a surface smoothing is achieved. Such methods are described, for example, in WO 97/07264 A1.

Further methods for producing as perfect a planarity as possible in preparation for the production of IC topographies of semiconductor surfaces are also described in US 2012/0217587 A1. According to US 2012/0217587 A1, the semiconductors may be the usual elemental semiconductors Si and Ge in monocrystalline, polycrystalline or amorphous form as well as semiconductor compounds such as silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and indium antimonide. In addition, alloyed semiconductor systems such as SiGe, GaAsP, AllnAs, AIGaAs, GalnAs, GalnP or GalnAsP can also be surface-treated.

The production of maximum planarity is carried out according to US 2012/0217587 A1 after preparation by different backfilling of depressions and coatings with cover layers with the patterns required for the topography when required at the desired locations, first by chemical-mechanical

Polishing method and then by irradiation with cluster ions with kinetic

Energies between 1 and 90 KeV. Here, nanodimensional cluster ions are generated from highly reactive gases which are the desired ones to be planarized

Surface layer removed by etching and thereby become highly planar

Generated surfaces. According to US 2012/0217587 A1, the etching gases NF 3, CF ₄ , C _x F _y or C _m H _n F ₀ or else halides, such as HBr, HF, SF 6 or also CI 2 are used as cluster ion-forming gases. These react in ionized form, in particular with the Si in the cover layers and volatilize this as volatile fluorides such as S1F4, whereby the irradiated layer is etched off, with a large for the

Topography training required planarity can be achieved. In addition, according to US 2012/0217587 A1, auxiliary etching gases such as O 2, N 2 or NH 3 can be added if necessary. In addition, it is also possible to work with doping gases which make possible the doping implantations required in the desired semiconductor. As doping gases are, for example B2H6, PH3, ASH3 or _GeH4 into consideration. The treatment of diamond-coated cutting tools with cluster gas ion beams for the purpose of smoothing the diamond layer is described in Japanese Patent Application JP 2010 036 297. There, a cluster gas consisting of pure argon or an Ar-02 mixture with 34% O 2 content is ionized and blasted onto a CVD diamond layer to obtain a homogeneous surface roughness and idiomorphic diamond layers. The average cluster size is about 1000 atomic or molecular subunits. The acceleration voltages are 20 to 30 KV.

Devices for generating gas clusters, eg. For example, from CO2, and ion beams thereof are described, for example, in JPH08120470 (A). According to this document, for example, CO2 gas from a pressurized

Reservoir is sprayed from a nozzle at supersonic velocity into a chamber and adiabatically expanded to form (electrically neutral) molecular clusters. The clusters are then bombarded with electrons in an ionizer to form ion clusters, which are then accelerated by electric fields and focused by magnetic fields. According to JPH08120470 (A), the CO2 gas cluster ion beam can be used for ultraprecise grinding of solid surfaces.

Finally, YAMADA et al. in Nucl. Instr. And Meth. In Phys. Res. B 206 (2003) 820-829: "Cluster Ion Beam Process Technology", process technologies with cluster ion beams and illuminate the theoretical and practical

Background. In particular, YAMADA et al. the effects of

Gas cluster ion beams with those of monomeric ion beams. the

Review article by YAMADA et al. The bombardment of an object with cluster ion beams is most likely to be compared with the impact of a metallic asteroid with a diameter of about 30 m on the Earth's surface, as happened, for example, about 50,000 years ago in the northern part of Arizona: the impact of this meteorite 1.2 km diameter crater with the typical raised crater rim of ejected material. At the microscopic level, collisions of particles of high energy or heavy ions produce similar craters on solid surfaces. So consider YAMADA et al. the impact of an Ar cluster ion on a gold surface: This is where a microcrater with a diameter of about 30 nm is formed, which is about 4 x 10 ¹⁰ times smaller than the above-mentioned meteorite crater.

It is estimated that such cluster ion beams are momentary

Temperatures of tens of thousands of degrees and pressures in the gigapaseal region in the target region.

In contrast to gas cluster ion irradiations, according to YAMADA et al. such effects in the irradiation of surfaces with monomeric ions not on.

Thus, it should be noted that the bombardment of solid-state surfaces with cluster ions causes considerable damage in the structure of the irradiated substrate and a surface refinement by means of cluster ions must be accompanied by a multiplicity of microcraters in the treated substrate surface.

In the production of high-performance cutting tools, however, a drastic structural change-as expected in the case of irradiation with cluster ions-is undesirable in the smoothing of the tool substrate surface already finished with regard to chemical composition and crystal lattice.

Based on the prior art of the review article by YAMADA et al. It was therefore an object of the present invention to provide highly smoothed tool surfaces, which at least largely avoid the disadvantageous structure changes of the prior art.

The solution of this problem is achieved by the characterizing features of claim 1.

In particular, the present invention relates to a cutting tool having a substrate surface made of a hard metal or a ceramic material, the substrate surface containing carbide and / or nitride-based and / or oxide-based hard particles embedded in a cobalt-containing binder matrix are, wherein the substrate surface is smoothed, wherein a

Substrate surface smoothing of the cutting tool by means of a treatment with an ion beam of monomeric ions of at least one cation species is available, wherein the cation species is singly or multiply charged and wherein the cation species is selected from the group consisting of: cations of the main group elements lithium, boron, aluminum, gallium , Carbon, silicon, germanium, nitrogen, phosphorus and oxygen; such as

from cations of the transition metals titanium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel and copper.

In the light of the prior art of the reviewed article by YAMADA et al. It is surprising that - in contrast to the known cluster ion beam treatment of surfaces - by means of an ion beam of monomeric ions according to the present invention, a structure-preserving

Ultrafine polishing and thus a smoothing of the surface roughness

Machining tools can be achieved.

A preferred embodiment of the present invention is a tool in which the hard material particles are selected from the group consisting of: the carbides, carbonitrides and nitrides of the non-radioactive metals of IV., V., VI. and VII. Subgroup of the Periodic Table of the Elements and boron nitride, in particular cubic boron nitride; as well as oxidic hard materials, in particular aluminum oxide and chromium oxide; and in particular titanium carbide, titanium nitride, titanium carbonitride;

Vanadium carbide, niobium carbide, tantalum carbide; Chromium carbide, molybdenum carbide,

tungsten carbide; Manganese carbide, rhenium carbide; and mixtures and mixed phases thereof.

Advantageously, in addition to cobalt, the binder matrix may additionally contain aluminum, chromium, molybdenum and / or nickel, whereby a fine adjustment of the toughness is provided. A likewise preferred embodiment of the present invention is a cutting tool in which the ceramic material is a sintered material of the above-listed hard material particles in a binding matrix, which in addition to cobalt additionally aluminum, chromium, molybdenum and / or nickel.

It is preferred that a sintered carbide or carbonitride carbide is used as the ceramic material.

The tools according to the invention can be designed as a rotating or standing tool, in particular as a drilling, milling, countersinking, turning, threading, contouring or reaming tool. As a result, the user has the full range of tools with the surface properties of the invention

Available.

In a conventional design, the tools according to the invention can be monolithic or modular.

Typical tools may be on a support body at least one

Cutting body, in particular a cutting plate, preferably a removable or indexable insert and / or at least one guide bar, in particular a support strip having.

It is particularly advantageous that the tool is formed from a high-speed steel, in particular a steel with the DIN steel key 1.3343, 1.3243, .3344 or .3247. As a result, the user has a large offer

High quality tools with highly polished surfaces available.

Even cutting tools which have at least one functional area that is diamond-coated, in particular CVD diamond-coated, can be processed with the monomeric ion beams in such a way that a uniform idiomorphic diamond layer is present. Thus are crystallographically by the

Growing the cubic diamond crystals in different preferred directions, e.g.

[111] or [001] conditional variations in thickness (cf JP 2010 036 247) Diamond layer substantially eliminated by the ion beam treatment, so that the tools according to the invention can be technically realized with a manufacturing accuracy of up to ± 1000 nm, for example for Sprialbohrer with diameters of up to 6 mm. Regardless of the location is the invention

cutting tool thus also the same thickness over the entire

Functional area e.g. Having a drill, which can be realized, for example, much more accurate and uniform drill holes in the workpiece.

In any case, for example, achieve drilling tools according to the present invention, a higher classification, so tighter tolerances in the Bohralbohrer- manufacturing accuracy according to DIN ISO 286, Part 2. Typically, twist drills Applicant in the diameter range from 0.38 mm to 120.00 mm with one

Manufacturing accuracy of ISO h8 manufactured. If the tools are treated according to the present invention by means of ion beams, so can the same

Tools are manufactured with a manufacturing accuracy of ISO h7. This means, for example, for a 50 mm twist drill if he has a

Manufacturing accuracy of ISO h8 has that the diameter deviation is ± 39 pm, while the inventive 50 mm twist drills a

Have manufacturing accuracy of ISO h7, whereby the diameter deviation of the drilling tools according to the invention is only ± 25 μιη.

Further advantages and features of the present invention will become apparent from the description of exemplary embodiments.

example

Carbide boring tools made of a 10M% Co carbide with a mean WC grain size of 0.6 pm (Guhring trade name DK460UF) were used for 1.5 h

According to the invention with an ionic stream of substantially monomeric

Nitrogen ions were irradiated, the ion current having a voltage of 30 kV at 3 mA plasma current at a nitrogen pressure of 1 x 10 ^"5 mbar was generated Generation of the ion beam, a commercial ion generator was used (ion generator "Hardion" from the company Quertech, Caen).

During the ion beam treatment, the tool, in the exemplary case a twist drill with a diameter of 6.00 mm with rotation about the longitudinal axis with an angle of incidence of 0 °, thus exposed from the drill bit in the longitudinal direction of the nitrogen ion beam. Prior to treatment, the twist drill met the manufacturing accuracy ISO h8. After the treatment, the measurements according to DIN ISO 286, Part 2 yielded a production accuracy of ISO h7 and in some cases better.

Claims

claims

A chip removing tool having a substrate surface made of a cemented carbide or a ceramic material, the substrate surface containing carbide and / or nitride based and / or oxide based hard particles embedded in a cobalt containing binder matrix, the substrate surface being smoothed, characterized in that a substrate surface finishing of the cutting tool is obtainable by treatment with an ion beam of monomeric ions of at least one cation species, the cation species being singly or multiply charged, and wherein the cation species is selected from the group consisting of: cations of the main group elements lithium, boron, aluminum, Gallium, carbon, silicon, germanium, nitrogen, phosphorus and oxygen; such as

2. Tool according to claim 1 or 2, characterized in that the

Hard material particles are selected from the group consisting of: the carbides, carbonitrides and nitrides of the non-radioactive metals of IV., V., VI. and VII. Subgroup of the Periodic Table of the Elements and boron nitride, in particular cubic boron nitride; as well as oxidic hard materials, in particular aluminum oxide and chromium oxide; and in particular titanium carbide, titanium nitride, titanium carbonitride;

Vanadium carbide, niobium carbide, tantalum carbide; Chromium carbide, molybdenum carbide, tungsten carbide; Manganese carbide, rhenium carbide and mixtures and

Mixed phases of it.

3. Tool according to one of the preceding claims, characterized

in that the binding matrix additionally contains aluminum, chromium, molybdenum and / or nickel in addition to cobalt.

4. Tool according to one of the preceding claims, characterized in that the ceramic material is a sintered material

Hard material particles according to claim 2 in a binding matrix according to claim 3.

5. Tool according to claim 4, characterized in that the ceramic material is a sintered carbide or carbonitride hard metal.

6. Tool according to one of the preceding claims, characterized

in that it can be used as a rotating or standing tool, in particular as a drilling, milling, countersinking, turning, threading, contouring or

Friction tool is formed.

7. Tool according to one of the preceding claims, characterized

characterized in that the tool is monolithic or modular.

8. Tool according to one of the preceding claims, characterized

in that on a carrier body at least one cutting body, in particular a cutting plate, preferably a change or

Turning, is provided and / or at least one guide bar, in particular a support bar, is provided.

9. Tool according to one of the preceding claims, characterized

in that the substrate is a high-speed steel, in particular a steel with the DIN steel key 1.3343, 1.3243, 1.3344 or 1.3247.

10. Tool according to one of the preceding claims, characterized

in that it has at least one functional area which is diamond-coated, in particular CVD diamond-coated.