EP3284110A1 - Milieux dopants, formant barrière à une diffusion parasitaire et imprimables, à base de sol-gel et destinés au dopage local de tranches de silicium - Google Patents
Milieux dopants, formant barrière à une diffusion parasitaire et imprimables, à base de sol-gel et destinés au dopage local de tranches de siliciumInfo
- Publication number
- EP3284110A1 EP3284110A1 EP16711776.1A EP16711776A EP3284110A1 EP 3284110 A1 EP3284110 A1 EP 3284110A1 EP 16711776 A EP16711776 A EP 16711776A EP 3284110 A1 EP3284110 A1 EP 3284110A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- aluminum
- doping
- printable
- silicon
- hybrid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 95
- 235000012431 wafers Nutrition 0.000 title claims description 155
- 229910052710 silicon Inorganic materials 0.000 title claims description 103
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 102
- 239000010703 silicon Substances 0.000 title claims description 97
- 230000003071 parasitic effect Effects 0.000 title description 7
- 230000002401 inhibitory effect Effects 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000002243 precursor Substances 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910052809 inorganic oxide Inorganic materials 0.000 claims abstract description 3
- 239000000499 gel Substances 0.000 claims description 111
- 239000000203 mixture Substances 0.000 claims description 100
- 239000011521 glass Substances 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052782 aluminium Inorganic materials 0.000 claims description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical class [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 47
- 239000002019 doping agent Substances 0.000 claims description 46
- 239000007789 gas Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 34
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 30
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000001993 wax Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 235000011837 pasties Nutrition 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 18
- -1 aluminum carboxylates Chemical class 0.000 claims description 17
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical class OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 17
- 238000007639 printing Methods 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 229910052810 boron oxide Inorganic materials 0.000 claims description 15
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 15
- 238000007650 screen-printing Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000007983 Tris buffer Substances 0.000 claims description 11
- 238000009833 condensation Methods 0.000 claims description 11
- 230000005494 condensation Effects 0.000 claims description 11
- 238000009472 formulation Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 125000003545 alkoxy group Chemical group 0.000 claims description 9
- 239000004327 boric acid Substances 0.000 claims description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000005299 abrasion Methods 0.000 claims description 7
- 150000004703 alkoxides Chemical group 0.000 claims description 7
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 7
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 7
- 239000000194 fatty acid Substances 0.000 claims description 7
- 229930195729 fatty acid Natural products 0.000 claims description 7
- 150000004665 fatty acids Chemical class 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- MJWPFSQVORELDX-UHFFFAOYSA-K aluminium formate Chemical compound [Al+3].[O-]C=O.[O-]C=O.[O-]C=O MJWPFSQVORELDX-UHFFFAOYSA-K 0.000 claims description 6
- 239000002738 chelating agent Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000008139 complexing agent Substances 0.000 claims description 6
- 150000002191 fatty alcohols Chemical class 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 238000006467 substitution reaction Methods 0.000 claims description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 5
- 238000001879 gelation Methods 0.000 claims description 5
- 150000002334 glycols Chemical class 0.000 claims description 5
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 claims description 5
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 5
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 4
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 claims description 4
- 235000013871 bee wax Nutrition 0.000 claims description 4
- 239000012166 beeswax Substances 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 claims description 4
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 claims description 3
- WHKZBVQIMVUGIH-UHFFFAOYSA-N 3-hydroxyquinoline-2-carboxylic acid Chemical class C1=CC=C2C=C(O)C(C(=O)O)=NC2=C1 WHKZBVQIMVUGIH-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004166 Lanolin Substances 0.000 claims description 3
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000004433 Simmondsia californica Nutrition 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 claims description 3
- 125000002723 alicyclic group Chemical group 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 3
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical compound CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 claims description 3
- 229940009827 aluminum acetate Drugs 0.000 claims description 3
- 150000008064 anhydrides Chemical class 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 239000004203 carnauba wax Substances 0.000 claims description 3
- 235000013869 carnauba wax Nutrition 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- WCOATMADISNSBV-UHFFFAOYSA-K diacetyloxyalumanyl acetate Chemical compound [Al+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WCOATMADISNSBV-UHFFFAOYSA-K 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- XLNLUQOMMFYHQF-UHFFFAOYSA-N diethoxymethyl-[1-(diethoxymethylsilyl)ethyl]silane Chemical compound CCOC(OCC)[SiH2]C(C)[SiH2]C(OCC)OCC XLNLUQOMMFYHQF-UHFFFAOYSA-N 0.000 claims description 3
- UGMCXQCYOVCMTB-UHFFFAOYSA-K dihydroxy(stearato)aluminium Chemical compound CCCCCCCCCCCCCCCCCC(=O)O[Al](O)O UGMCXQCYOVCMTB-UHFFFAOYSA-K 0.000 claims description 3
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000001804 emulsifying effect Effects 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 claims description 3
- 150000002192 fatty aldehydes Chemical class 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- ORTFAQDWJHRMNX-UHFFFAOYSA-N hydroxidooxidocarbon(.) Chemical group O[C]=O ORTFAQDWJHRMNX-UHFFFAOYSA-N 0.000 claims description 3
- 239000012182 japan wax Substances 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 235000019388 lanolin Nutrition 0.000 claims description 3
- 229940039717 lanolin Drugs 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 claims description 3
- 230000036961 partial effect Effects 0.000 claims description 3
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 239000000344 soap Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 3
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 238000006482 condensation reaction Methods 0.000 claims description 2
- 241000221096 Simmondsia chinensis Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- 238000005530 etching Methods 0.000 description 43
- 239000012071 phase Substances 0.000 description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 34
- 239000000243 solution Substances 0.000 description 33
- 229910052796 boron Inorganic materials 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 18
- SESFRYSPDFLNCH-UHFFFAOYSA-N benzyl benzoate Chemical compound C=1C=CC=CC=1C(=O)OCC1=CC=CC=C1 SESFRYSPDFLNCH-UHFFFAOYSA-N 0.000 description 16
- 238000003756 stirring Methods 0.000 description 16
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 239000005360 phosphosilicate glass Substances 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 13
- 239000000654 additive Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 238000001035 drying Methods 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 10
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 8
- 229960002903 benzyl benzoate Drugs 0.000 description 8
- XSIFPSYPOVKYCO-UHFFFAOYSA-N butyl benzoate Chemical compound CCCCOC(=O)C1=CC=CC=C1 XSIFPSYPOVKYCO-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 description 8
- 239000011541 reaction mixture Substances 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- UYEMGAFJOZZIFP-UHFFFAOYSA-N 3,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC(O)=C1 UYEMGAFJOZZIFP-UHFFFAOYSA-N 0.000 description 6
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- 239000011877 solvent mixture Substances 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 5
- FZENGILVLUJGJX-NSCUHMNNSA-N (E)-acetaldehyde oxime Chemical compound C\C=N\O FZENGILVLUJGJX-NSCUHMNNSA-N 0.000 description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric Acid Chemical compound [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 5
- 229960000583 acetic acid Drugs 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000009835 boiling Methods 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000005292 vacuum distillation Methods 0.000 description 5
- 238000009736 wetting Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- HJSLFCCWAKVHIW-UHFFFAOYSA-N cyclohexane-1,3-dione Chemical compound O=C1CCCC(=O)C1 HJSLFCCWAKVHIW-UHFFFAOYSA-N 0.000 description 4
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000000839 emulsion Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 239000000976 ink Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000005204 segregation Methods 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000010344 co-firing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 150000005169 dihydroxybenzoic acids Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000001404 mediated effect Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229940107700 pyruvic acid Drugs 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 2
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 2
- 229940035437 1,3-propanediol Drugs 0.000 description 2
- OAKURXIZZOAYBC-UHFFFAOYSA-M 3-oxopropanoate Chemical compound [O-]C(=O)CC=O OAKURXIZZOAYBC-UHFFFAOYSA-M 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- WDJHALXBUFZDSR-UHFFFAOYSA-N Acetoacetic acid Natural products CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 2
- 229910000505 Al2TiO5 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 241000221095 Simmondsia Species 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000012455 biphasic mixture Substances 0.000 description 2
- 238000003490 calendering Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- WOWBFOBYOAGEEA-UHFFFAOYSA-N diafenthiuron Chemical compound CC(C)C1=C(NC(=S)NC(C)(C)C)C(C(C)C)=CC(OC=2C=CC=CC=2)=C1 WOWBFOBYOAGEEA-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 239000012362 glacial acetic acid Substances 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- 239000008240 homogeneous mixture Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- VGTPKLINSHNZRD-UHFFFAOYSA-N oxoborinic acid Chemical compound OB=O VGTPKLINSHNZRD-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 2
- 229920003225 polyurethane elastomer Polymers 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- AABBHSMFGKYLKE-SNAWJCMRSA-N propan-2-yl (e)-but-2-enoate Chemical compound C\C=C\C(=O)OC(C)C AABBHSMFGKYLKE-SNAWJCMRSA-N 0.000 description 2
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- KPGXRSRHYNQIFN-UHFFFAOYSA-N 2-oxoglutaric acid Chemical compound OC(=O)CCC(=O)C(O)=O KPGXRSRHYNQIFN-UHFFFAOYSA-N 0.000 description 1
- FAGBOGANRCHESP-UHFFFAOYSA-N 3-benzyl-4-butylphthalic acid Chemical compound CCCCC1=CC=C(C(O)=O)C(C(O)=O)=C1CC1=CC=CC=C1 FAGBOGANRCHESP-UHFFFAOYSA-N 0.000 description 1
- HBAQYPYDRFILMT-UHFFFAOYSA-N 8-[3-(1-cyclopropylpyrazol-4-yl)-1H-pyrazolo[4,3-d]pyrimidin-5-yl]-3-methyl-3,8-diazabicyclo[3.2.1]octan-2-one Chemical class C1(CC1)N1N=CC(=C1)C1=NNC2=C1N=C(N=C2)N1C2C(N(CC1CC2)C)=O HBAQYPYDRFILMT-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002051 biphasic effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012803 melt mixture Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000000546 pharmaceutical excipient Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004801 process automation Methods 0.000 description 1
- 239000003586 protic polar solvent Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000010022 rotary screen printing Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000008674 spewing Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- UFTFJSFQGQCHQW-UHFFFAOYSA-N triformin Chemical compound O=COCC(OC=O)COC=O UFTFJSFQGQCHQW-UHFFFAOYSA-N 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a novel printable paste in the form of a hybrid gel based on precursors of inorganic oxides, which can be used in a simplified process for the production of solar cells, wherein the hybrid gel according to the invention both as
- Doping medium and acts as a diffusion barrier.
- a silicon wafer (monocrystalline, multicrystalline or quasi-monocrystalline, p- or n-type base doping) is freed of adherent saw damage by means of an etching process and "simultaneously", usually in the same etching bath, texturized under texturing is in this case the creation of a preferred Surface (texture) as a result of the etching step or simply to understand the targeted, but not particularly oriented roughening of the wafer surface
- the aforementioned etching solutions for treating the silicon wafers typically consist of dilute potassium hydroxide solution to which isopropyl alcohol has been added as solvent. Instead, other alcohols having a higher vapor pressure or higher boiling point than isopropyl alcohol may be added, provided that desired etching result can be achieved.
- the desired etch result is a morphology that is randomly-etched, or rather etched out of the original surface.
- Pyramids is characterized by square base.
- the density, the height and thus the base area of the pyramids can be influenced by a suitable choice of the above-mentioned constituents of the etching solution, the etching temperature and the residence time of the wafers in the etching basin.
- Temperature range of 70 - ⁇ 90 ° C performed, with ⁇ tzabträge of up to 10 pm per wafer side can be achieved.
- the etching solution may consist of potassium hydroxide solution with an average concentration (10-15%).
- this etching technique is hardly used in industrial practice. More often becomes one
- Etching solution consisting of nitric acid, hydrofluoric acid and water used.
- This etching solution can be modified by various additives such as sulfuric acid, phosphoric acid, acetic acid, N-methylpyrrolidone and also surfactants, which u. a.
- Wetting properties of the etching solution and their etch rate can be specifically influenced.
- These acid etch mixtures produce a morphology of interstitially arranged etch pits on the surface.
- the etching is typically carried out at temperatures in the range between 4 ° C to ⁇ 10 ° C and the ⁇ tzabtrag here is usually 4 pm to 6 pm.
- the silicon wafers are included
- the wafers are exposed in a tube furnace in a controlled atmosphere quartz glass tube consisting of dried nitrogen, dried oxygen and phosphoryl chloride.
- the wafers are introduced at temperatures between 600 and 700 ° C in the quartz glass tube.
- the gas mixture is transported through the quartz glass tube.
- the phosphoryl chloride decomposes to a vapor consisting of phosphorus oxide (eg P 2 O 5) and chlorine gas.
- the vapor of phosphorus oxide u. a. on the wafer surfaces down (occupancy).
- the silicon surface is oxidized at these temperatures to form a thin oxide layer.
- the deposited phosphorus oxide is embedded, whereby a mixed oxide of silicon dioxide and phosphorus oxide formed on the wafer surface.
- This mixed oxide is called phosphosilicate glass (PSG).
- PSG phosphosilicate glass
- the mixed oxide serves the silicon wafer as a diffusion source, wherein in the course of the diffusion, the phosphorus oxide diffuses in the direction of the interface between PSG glass and silicon wafer and is reduced there by reaction with the silicon on the wafer surface (silicothermally) to phosphorus.
- the resulting phosphor has a solubility which is orders of magnitude greater in silicon than in the glass matrix from which it is formed, and thus dissolves preferentially in silicon due to the very high segregation coefficient. After its dissolution, the phosphorus diffuses in the
- the typical diffusion depth is 250 to 500 nm and is of the selected diffusion temperature (for example 880 ° C) and the total exposure time (heating & loading phase & driving phase & cooling) of the wafers in the highly heated atmosphere.
- a PSG layer is formed, which typically has a layer thickness of 40 to 60 nm. in the
- the drive-in phase follows. This can be decoupled from the assignment phase, but is conveniently conveniently in time directly to the
- the composition of the gas mixture is adjusted so that the further supply of phosphoryl chloride is suppressed.
- the surface of the silicon is further oxidized by the oxygen contained in the gas mixture, whereby a phosphorus depleted silicon dioxide layer is also generated between the actual doping source, the phosphorus oxide highly enriched PSG glass and the silicon wafer
- the tube furnace is automatically cooled and the wafers can be removed from the process tube at temperatures between 600 ° C to 700 ° C.
- Composition of the gas atmosphere used for doping can the formation of a so-called boron skin on the wafers are detected.
- This boron skin is dependent on various influencing factors: decisive for the doping atmosphere, the temperature, the doping time, the
- Pretreatment were subjected (for example, their structuring with diffusion-inhibiting and / or -unterbindenden layers and
- Ion implantation, doping mediates via the gas phase deposition of mixed oxides, such as those of PSG and BSG (borosilicate) glass, by means of APCVD, PECVD, MOCVD and LPCVD methods,
- the latter are often used in the so-called in-line doping, in which the corresponding pastes and inks on the side to be doped of the Wafers are applied by suitable methods. After or even during application, the solvents contained in the compositions used for doping are removed by temperature and / or vacuum treatment. As a result, the actual dopant remains on the wafer surface.
- in-line doping in which the corresponding pastes and inks on the side to be doped of the Wafers are applied by suitable methods.
- the solvents contained in the compositions used for doping are removed by temperature and / or vacuum treatment. As a result, the actual dopant remains on the wafer surface.
- Doping sources for example, dilute solutions of phosphoric or boric acid, as well as sol-gel-based systems or solutions of polymeric Borazilitatien can be used.
- Solvents from the aforementioned doping media are usually followed by a high-temperature treatment during which undesirable and interfering additives which cause the formulation are either "burned" and / or pyrolyzed., The removal of solvents and the burn-out may or may not , take place simultaneously.
- the coated substrates usually pass through a continuous furnace at temperatures between 800 ° C and 1000 ° C, to shorten the cycle time, the temperatures in comparison to
- Gas phase diffusion in the tube furnace can be slightly increased.
- the prevailing in the continuous furnace gas atmosphere can according to the
- Driving the dopant can in principle be decoupled from each other.
- the wafers present after the doping are coated on both sides with more or less glass on both sides of the surface. More or less, in this case, refers to modifications made in the context of Doping process can be applied: double-sided diffusion vs. quasi one-sided diffusion mediated by back-to-back arrangement of two wafers in a parking space of the process boats used. The latter
- Variant allows a predominantly one-sided doping, but does not completely prevent the diffusion on the back.
- the wafers are on the one hand transhipped in batches in wet process boats and with their help in a solution of dilute hydrofluoric acid, typically 2% to 5%, immersed and left in this until either the surface is completely removed from the glasses, or Process cycle has expired, which represents a sum parameter of the necessary ⁇ tzdauer and the automatic process automation.
- the complete removal of the glasses can be determined, for example, by the complete dewetting of the silicon wafer surface by the dilute aqueous hydrofluoric acid solution.
- the complete removal of a PSG glass is achieved under these process conditions, for example with 2% hydrofluoric acid solution within 210 seconds at room temperature.
- the etching of corresponding BSG glasses is slower and requires longer process times and possibly also higher
- the etching of the glasses on the wafer surfaces can also be carried out in a horizontally operating method in which the wafers are introduced in a constant flow into an etching system in which the wafers pass through the corresponding process tanks horizontally (inline system).
- the wafers are conveyed on rollers and rollers either through the process tanks and the etching solutions contained therein or the etching media are transposed onto the wafer surfaces by means of roller application.
- the typical residence time of the wafers in the case of etching the PSG glass is about 90 seconds, and the hydrofluoric acid used is somewhat more concentrated than in the batch process
- the concentration of hydrofluoric acid is typically 5%.
- the tank temperature compared to the
- edge insulation -> glass etching is a process engineering necessity, which results from the system-inherent characteristics of the double-sided diffusion, even with intentional unilateral back-to-back diffusion.
- edge insulation is a process engineering necessity, which results from the system-inherent characteristics of the double-sided diffusion, even with intentional unilateral back-to-back diffusion.
- parasitic p-n transition On the (later) back side of the solar cell, there is a large-scale parasitic p-n transition, which, although due to process technology, is partly, but not completely, removed in the course of the later processing. As a result, the front and back of the solar cell are parasitic and parasitic
- the wafers are unilaterally via an etching solution
- etching solution consisting of nitric acid and hydrofluoric acid.
- the etching solution may contain as minor constituents, for example, sulfuric acid or phosphoric acid.
- the etching solution is imparted via rollers to the
- etch removal typically achieved with these methods is about 1 pm of silicon at temperatures between 4 ° C. and 8 ° C. (including that on the surface to be treated
- edge isolation can also be done with the help of
- Plasma etching processes are performed. This plasma etching is then usually carried out before the glass etching. For this purpose, several wafers are stacked on each other and the outer edges become the plasma
- the plasma is filled with fluorinated gases, for example
- Tetrafluoromethane fed.
- Solar cells with an anti-reflection coating which usually consists of amorphous and hydrogen-rich silicon nitride.
- Antireflection coatings are conceivable. Possible coatings may include titanium dioxide, magnesium fluoride, tin dioxide and / or
- the layer generates an electric field due to the numerous incorporated positive charges, that charge carriers in the silicon can keep away from the surface and the recombination speed of these charge carriers at the
- this layer depending on its optical parameters, such as refractive index and layer thickness, this layer generates a reflection-reducing property which contributes to the fact that more light can be coupled into the later solar cell. Both effects can increase the conversion efficiency of the solar cell.
- the antireflection reduction is most pronounced in the wavelength range of the light of 600 nm.
- the directional and non-directional reflection shows a value of about 1% to 3% of the originally incident light (perpendicular incidence to the surface normal of the silicon wafer).
- the above-mentioned silicon nitride films are currently generally deposited on the surface by a direct PECVD method.
- a gas atmosphere of argon a plasma is ignited, in which silane and Ammonia are introduced.
- the silane and the ammonia are converted in the plasma by ionic and radical reactions to silicon nitride and thereby deposited on the wafer surface.
- the properties of the layers can z. B. adjusted and controlled by the individual gas flows of the reactants.
- the deposition of the above-mentioned silicon nitride layers can also be carried out using hydrogen as the carrier gas and / or the reactants alone. Typical deposition temperatures are in the range between 300 ° C to 400 ° C.
- Alternative deposition methods may be, for example, LPCVD and / or sputtering.
- Silicon nitride coated wafer surface defines the front electrode.
- the electrode has been established using the screen printing method using metallic
- the sum of the residual constituents results from the necessary for the formulation of the paste theological aids, such as solvents, binders and thickeners.
- the silver paste contains a special Glasfrit mixture, mostly oxides and mixed oxides based on
- the glass frit fulfills essentially two functions: on the one hand it serves as a bonding agent between the wafer surface and the mass of the silver particles to be sintered, on the other hand it is responsible for the penetration of the silicon nitride covering layer in order to enable the direct ohmic contact to the underlying silicon.
- the penetration of the silicon nitride takes place via an etching process with subsequent diffusion of silver present dissolved in the glass frit matrix into the silicon surface, whereby the ohmic contact formation is achieved.
- the silver paste is deposited by screen printing on the wafer surface and then at temperatures of about 200 ° C to 300 ° C for a few Dried for a few minutes.
- double-printing processes also find industrial application, which make it possible to print on an electrode grid generated during the first printing step, a congruent second.
- Silver metallization increases, which can positively influence the conductivity in the electrode grid.
- the solvents contained in the paste are expelled from the paste.
- the printed wafer passes through a continuous furnace.
- Such an oven generally has several heating zones, which can be independently controlled and tempered.
- the wafers are heated to temperatures up to about 950 ° C. However, the single wafer is typically exposed to this peak temperature for only a few seconds. During the remaining run-up phase, the wafer has temperatures of 600 ° C to 800 ° C. In these
- Temperatures are contained in the silver paste contained organic impurities, such as binders, and the etching of the silver paste.
- Silicon nitride layer is initiated. During the short time interval of the prevailing peak temperatures, contact formation occurs.
- the process of contact formation outlined so briefly is usually carried out simultaneously with the two remaining contact formations (see Figures 6 and 7), which is why in this case one also speaks of a co-firing process.
- the front electrode grid consists of thin fingers
- the typical height of the printed silver elements is typically between 10 pm and 25 ym.
- the aspect ratio is rarely greater than 0.3.
- the rear bus buses are also usually by means of
- the back electrode is defined following the pressure of the bus buses.
- the electrode material is made of aluminum, therefore, to define the electrode, an aluminum-containing paste by screen printing on the remaining free area of the wafer back with a
- Edge distance ⁇ 1 mm is printed.
- Aluminum assembled The remaining components are those already mentioned under point 5 (such as solvents, binders, etc.).
- the aluminum paste is bonded to the wafer during co-firing by causing the aluminum particles to start to melt during heating and remove silicon from the wafer in the wafer
- the melt mixture acts as a dopant source and gives aluminum to the silicon (solubility limit: 0.016 atomic percent), whereby the silicon is p + doped as a result of this drive-in.
- the wafer will precipitate on the wafer surface u. a. a eutectic mixture of aluminum and silicon, which solidifies at 577 ° C and has a composition with a mole fraction of 0.12 Si.
- This potential wall is generally referred to as the back surface field or back surface field.
- edge isolation of the wafer has not already been carried out as described under point 3, this is typically carried out after co-firing with the aid of laser beam methods.
- a laser beam is directed to the front of the solar cell and the front p-n junction is severed by means of the energy coupled in by this beam.
- This trench with a depth of up to 15 ⁇ due to
- this laser trench is 30 ⁇ to 60 ⁇ wide and about 200 ⁇ away from the edge of the solar cell.
- solar cell architectures with both n-type and p-type base material. These solar cell types include u. a. ⁇ PERC solar cells
- structured diffusion barriers may be deposited on the silicon wafers prior to depositing the glasses to define the regions to be doped.
- a disadvantage of this method is that in each case only one polarity (n or p) of
- Wafer surfaces deposited dopant sources This method makes it possible to save costly structuring steps. However, it can not compensate for the disadvantage of a possible simultaneous simultaneous doping of two polarities on the same surface at the same time (co-diffusion), since this method is also based on a predeposition of a dopant source, which is activated only subsequently for the emission of the dopant. Disadvantage of this (post-) doping from such sources is the inevitable laser damage to the substrate: the laser beam must by absorbing the radiation into heat
- Phosphorylchlond and / or boron tribromide do not allow to selectively generate local dopants and / or locally different dopants on silicon wafers.
- the creation of such structures is possible by using known doping technologies only by consuming and costly structuring of the substrates. When structuring different dopants and / or locally different dopants on silicon wafers.
- the doping source must have a sufficiently pasty
- Gelation of the hybrid gels of the invention can be adjusted.
- the intrinsic viscosity of the hybrid gels can be further adjusted as desired by the addition of waxes and waxy additives and additives as desired.
- the waxes and waxy additives used for the formulation are dissolved and / or melted in gelled paste mixture.
- waxes and waxy additives used in the formulation act associatively and co-thickening in synthesized and gelled pastes, without the additives being thickeners in the classical sense. Furthermore, the associative, intrinsic viscosity-affecting waxes and waxy compounds have an advantageous effect on the adjustment of the glass layer thickness resulting from the printed hybrid gels as well as on their individual drying resistance to stress.
- the subject of the present invention is therefore printable
- Silica, alumina and boron oxide which preferably by means of of the screen printing method on silicon surfaces for the purpose of local and / or full-area, one-sided diffusion and doping in the production of solar cells, preferably of highly efficient structured doped solar cells, printed, nachlagernd dried and then by means of a suitable high-temperature process for
- Silicon atom may have attached hydrogen atom, such as triethoxysilane, and further wherein a
- Degree of substitution refers to the number of possible existing carboxy and / or alkoxy groups, which have both single and different saturated, unsaturated branched, unbranched aliphatic, alicyclic and aromatic radicals in each case at alkyl and / or alkoxy and / or carboxy groups, which in turn at any position of the alkyl, alkoxide or carboxy radical may be functionalized by heteroatoms selected from the group O, N, S, Cl and Br, as well as mixtures of the abovementioned
- Aluminum alcoholates such as aluminum triethanolate
- reaction conditions can be influenced by the fact that highly viscous mixtures are in the form of pasty formulations or also pastes which mix with printing processes suitable for such mixtures, preferably the
- the printable paste hybrid gel according to the invention is a composition which can be adjusted by the addition of waxes and waxy compounds in an amount of up to 25% based on the final total mixture of the paste in terms of its pasty and pseudoplastic properties, the waxes and waxy compounds selected from the group consisting of beeswax, synchro wax, lanolin, carnauba wax, jojoba, Japan wax and the like, fatty acids and fatty alcohols, fatty glycols, esters
- Substance classes should each contain branched and unbranched carbon chains with chain lengths greater than or equal to twelve carbon atoms, single-phase and / or biphasic, emulsifying or suspending, thickening and thus make the classical use of polymeric thickeners superfluous.
- Hybrid gel is particularly well suited for use as a doping medium in the processing of silicon wafers for photovoltaic, microelectronic, micromechanical and micro-optical applications.
- novel paste-like ones described herein are
- Hybrid gels are suitable for the production of PERC, PERL, PERT, IBC solar cells and other high-performance solar cells, which feature further architectural features such as MWT, EWT, Selective Emitter, Selective Front Surface Field, Selective Back Surface Field and Bifaciality.
- MWT MWT
- EWT Selective Emitter
- Selective Front Surface Field Selective Back Surface Field and Bifaciality.
- Layers on silicon wafers can be used.
- the hybrid gel is applied using one or more to be carried out sequentially Temper Colouren (tempering by means of a step function) and / or an annealing ramp, dried and compacted to the glazing, which forms grip and abrasion resistant layers with a thickness of up to 500 nm.
- Using the printable hybrid gel according to the invention can influence the conductivity of the substrate by drying corresponding to surfaces applied to layers, compacted and vitrified and from the vitrified layers by heat treatment at a
- Silicon wafer surfaces with dopants of opposite polarity is induced by conventional gas phase diffusion and wherein the printed hybrid gel acts as a diffusion barrier to the dopants of opposite polarity.
- Solar cells using the paste-shaped hybrid gel according to the invention are characterized in that a) hybrid gels are printed on silicon wafers, dried and compacted onto the printed gels, and then subjected to subsequent gas phase diffusion with, for example, phosphoryl chloride to yield p-type dopants in the printed areas of the wafers and n-type dopants in the areas exclusively exposed to gas-phase diffusion,
- the silicon wafer is printed locally with the hybrid gel, wherein the structured landfill may optionally have alternating lines, the printed structures dried and compacted and subsequently over the entire surface with the aid of PVD and / or CVD-deposited doped glasses doping in silicon of opposite polarity, can be coated and encapsulated, and the
- the overlapping overall structure is brought to the structured doping of the silicon wafer by suitable high-temperature treatment, wherein the printed hybrid gel acts as a diffusion barrier with respect to the glass above it and the dopant contained therein.
- a paste is to be understood as meaning a composition which, due to the sol-gel-based synthesis, has a high viscosity of more than 500 mPa * s and is no longer flowable.
- the printable, highly viscous oxide media also referred to below as hybrid gels
- Silicon dioxide one to fourfold symmetric and asymmetric
- Silicon atom may have attached hydrogen atom, such as
- triethoxysilane and further wherein a degree of substitution refers to the number of possible existing carboxy and / or alkoxy groups, which in both alkyl and / or alkoxy and / or
- Carboxy groups have individual or different saturated, unsaturated branched, unbranched aliphatic, alicyclic and aromatic radicals, which in turn may be functionalized at any position of the alkyl, alkoxide or the carboxy radical by heteroatoms selected from the group O, N, S, Cl and Br, and mixtures of the aforementioned precursors.
- Individual compounds which are mentioned in the above are mentioned in the above.
- Claims are: tetraethyl orthosilicate and the like,
- Triethoxysilane ethoxytrimethylsilane, dimethyldimethoxysilane,
- Aluminum alcoholates such as aluminum triethanolate
- Aluminum tristearate aluminum carboxylates such as basic aluminum acetate, aluminum triacetate, basic aluminum formate, aluminum tri-formate and aluminum trioctoate, aluminum hydroxide, aluminum metahydroxide and
- Boron oxide diboroxide, simple boric acid alkyl esters, such as triethyl borate,
- glycerol for example, glycerol, functionalized 1, 3-glycols, such as, for example,
- boric acid esters with boric acid esters containing the aforementioned structural motifs as structural subunits, such as
- boric acid esters from ethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine and tripropanolamine, mixed anhydrides of boric acid and
- Carboxylic acids such as tetraacetoxy diborate, boric acid,
- the hybrid gels may contain further substances which can confer advantageous properties on the gels. They may be: oxides, basic oxides, hydroxides, alkoxides, carboxylates, ⁇ -diketonates, ⁇ -ketoesters, silicates and the like of cerium, tin, zinc, titanium, zirconium, hafnium, zinc, germanium, gallium, niobium, yttrium, which in the sol-gel synthesis can be used directly or pre-condensed application.
- oxides oxides, basic oxides, hydroxides, alkoxides, carboxylates, ⁇ -diketonates, ⁇ -ketoesters, silicates and the like of cerium, tin, zinc, titanium, zirconium, hafnium, zinc, germanium, gallium, niobium, yttrium, which in the sol-gel synthesis can be used directly or pre-condensed application.
- Hybrid gels can be prepared using anhydrous as well as hydrous sol-gel synthesis.
- the following substances can be used advantageously:
- Oxid precursors, as suitable carbonyls can at least serve: Formic acid, acetic acid, oxalic acid, trifluoroacetic acid, mono-, di- and trichloroacetic acid, glyoxylic acid, tartaric acid, maleic acid, malonic acid, pyruvic acid, malic acid, 2-oxoglutaric acid
- particulate additives eg aluminum hydroxides and
- Titanium dioxide, titanium carbide, titanium nitride, titanium carbonitride for influencing the dry film thicknesses resulting after drying and their morphology
- particulate additives eg aluminum hydroxides and
- Titanium dioxide, titanium carbide, titanium nitride, titanium carbonitride for influencing the scratch resistance of the dried films
- Capping agent selected from the group acetoxytrialkylsilanes,
- Waxes and waxy compounds such as beeswax
- Substance classes should each contain branched and unbranched carbon chains with chain lengths greater than or equal to twelve carbon atoms.
- the hybrid gels can be prepared by adding appropriate
- Masking agents, complex and chelating in a sub stoichiometric to a stoichiometric ratio on the one hand sterically stabilize and on the other hand in terms of their condensation and gelling rate but also in terms of the rheological properties targeted influence and control. Suitable masking and complexing agents, as well
- Chelating agents for example, acetylacetone,, 3-cyclohexanedione, isomeric compounds of dihydroxybenzoic acids, acetaldoxime, as well as those disclosed and contained in the patent applications WO 2012/1 9686 A, WO20121 19685 A1, WO20121 19684 A, EP12703458.5 and EP12704232.3. The content of these publications is therefore included in the disclosure of the present application.
- the hybrid gels can be applied to the surface of silicon wafers using printing and coating techniques.
- These can be: spin coating or dip coating, drop casting, curtain or slot dye coating, screen printing or flexoprinting, gravure, ink jet or aerosol jet printing, offset printing, microcontact printing,
- Electrohydrodynamic dispensing, roller or spray coating, ultrasonic spray coating, pipe jetting, laser transfer printing, pedd printing or rotary screen printing Preferably, printing of the hybrid gels is accomplished by the screen printing method.
- Silicon wafers printed hybrid gels are subjected to a drying step following their landfill. This drying may, but not necessarily, be done in a continuous furnace. During the drying of the gels, they are compacted as a result of the spewing out of solvents, as well as the thermal degradation of formulation auxiliaries and of the oxide precursors into homogeneous and tightly closing vitreous layers.
- the thus prepared, printable and dried hybrid gels are particularly well suited for use as a doping medium in the
- hybrid gels are particularly suitable for the production of PERC, PERL, PERT, IBC solar cells (BJBC or BCBJ) and others, wherein the solar cells further architectural features, such as MWT, EWT, selective emitter, selective front surface field, selective Have back surface field and bifaciality. Furthermore, the solar cells further architectural features, such as MWT, EWT, selective emitter, selective front surface field, selective Have back surface field and bifaciality. Furthermore, the
- Glass layers which act as a sodium and potassium diffusion barrier in the LCD technology due to a thermal treatment, in particular for Production of thin, dense glass layers on the cover glass of a display, consisting of doped S1O2, which prevent the diffusion of ions from the cover glass into the liquid-crystalline phase.
- the surface-printed hybrid gel prepared by a process within the scope of the invention is particularly preferred in a temperature range between 50 ° C and 750 ° C, preferably between 50 ° C and 500 ° C between 50 ° C and 400 ° C, using one or more, to be carried out sequentially Temper Colouren (tempering by a step function) and / or an annealing ramp, dried and compacted to the glazing, forming a grip and abrasion resistant layer, may have thicknesses of up to 500 nm.
- a heat treatment of the vitrified on the surfaces layers at a temperature in the range between 750 ° C and 1100 ° C, preferably between 850 ° C and 1 00 ° C, more preferably between 850 ° C and 1000 ° C.
- silicon such as boron in the present case
- Treatment duration and the treatment temperature can be transported in depths of up to 1 ⁇ , and electrical layer resistances of less than 10 ⁇ / sqr are adjustable.
- the surface concentration of the dopant can reach values greater than or equal 1 * 10 19 1 * 0 20 to several
- Atoms / cm 3 and depends on the type of dopant used in the printable hybrid gel. It has proved to be particularly advantageous hereby that subsequently the
- this result can be achieved by printing the hybrid gel as a doping medium on hydrophilic (wet-chemical and / or native oxide) and / or hydrophobic (silane-terminated) silicon wafer surfaces.
- composition of the hybricle proportions of the doping oxide precursor to those of the accompanying oxide precursors, mainly but not exclusively glass forming
- this process can be used to produce grip and abrasion-resistant oxidic layers which have a doping effect on silicon and silicon wafers a) silicon wafers are printed with the hybrid gels according to the invention, the printed Dotiermedien dried, compacted and
- III. is removed from the wafer surface by means of subsequent sequential wet chemical treatment with nitric and hydrofluoric acid or
- Phosphoryl chloride in the case of a used n-type doping medium or with, for example, boron trichloride or boron tribromide in the case of a p-type doping medium used, whereby high dopings in the non-printed areas and lower
- Phosphoryl chloride in the case of a used n-type doping medium or with, for example, boron trichloride or boron tribromide in the case of a p-type doping medium used can be obtained, whereby low doping in the non-printed areas and high dopants in the printed areas can be obtained, in that
- Source concentration of the hybrid gels used was controlled by synthesis sufficiently controlled, and the glass obtained from the hybrid gel according to the invention and the
- hybrid gel deposited over the entire surface of the silicon wafer is dried and / or compacted and from the compacted hybrid doping gel with the aid of laser irradiation, the local doping of the underlying substrate material is initiated,
- Heat treatment initiated the doping of the underlying substrate and subsequently with subsequent local
- the silicon wafer either over the entire surface or locally with the
- the printed hybrid structures according to the invention, optionally by alternating structures, the printed structures are dried and compacted, the negatives of the alternating structures are printed by means of oppositely doping acting materials and as a result of suitable heat treatment for structured doping of the
- hybrid gels according to the invention are optionally printed in an alternating structure sequence of arbitrary structure width, for example line width, adjacent to non-printed silicon surface also characterized by an arbitrary structure width, the printed structures are dried and compacted, after which the wafer of a conventional
- Gas phase diffusion and doping is subjected by means of phosphoryl chloride or phosphorus pentoxide and thereby acts either locally or over the entire area applied hybrid gel as a diffusion barrier to the mediated via the gas phase dopant and consequently not printed with the hybrid gel according to the invention
- Wafer surfaces of an opposite doping, in this case with phosphorus, are subjected; if necessary, the opposite surface printed with the hybrid gel must or can be suitably etched back by means of suitable wet-chemical etching steps, or
- hybrid gels according to the invention are optionally printed in an alternating structure sequence of arbitrary structure width, for example line width, adjacent to non-printed silicon surface likewise characterized by any structure width, the printed structures are dried and compacted, after which the entire surface of the wafer is coated with a
- Wafer surface can be provided (encapsulation), the latter doping media printable sol-gel-based oxidic dopants, other printable dopants and / or pastes, doped APCVD and / or PECVD glasses and dopants from conventional gas phase diffusion and doping can be, and the overlapping arranged and doping acting doping due to suitable heat treatment for doping of the substrate are brought and in this context, the bottom befindliches printed hybrid dot-acting hybrid gel due to suitable segregation coefficients and insufficient diffusion lengths as a diffusion barrier to behave over it, the contrasting majority majority carrier polarity inducing doping medium must behave; further comprising the other side of the wafer surface by means of an otherwise and otherwise deposited (printed, CVD, PVD) diffusion barrier, such as
- Silicon dioxide or silicon nitride or silicon oxynitride may be covered, but need not necessarily be
- the silicon wafer either over the entire surface or locally with the
- hybrid gels according to the invention are optionally printed in an alternating structure sequence of arbitrary structure width, for example line width, adjacent to non-printed silicon surface likewise characterized by any structure width, the printed structures are dried and compacted, after which the entire surface of the wafer is coated with a
- Wafer surface can be provided (encapsulation), after which then the wafer surface over the entire surface with a doping opposite inducing majority charge carrier polarity can be provided on the already printed wafer surface, the latter doping media printable sol-gel-based oxide dopants, other printable Dotiertinten and / or Pastes may be doped APCVD and / or PECVD glasses as well as dopants from conventional gas phase diffusion and doping, and the overlapping arranged doping and doping acting dopants due to appropriate heat treatment for doping of the substrate are brought and this context to support As a result of suitable segregation coefficients and inadequate
- Hybrid gels their drying, and compression and / or doping by thermal treatment resulting glass layers with a
- Acid mixture containing hydrofluoric acid and optionally phosphoric acid etched wherein the etching mixture used as etchant hydrofluoric acid in a concentration of 0.001 to 10 wt .-% or 0.001 to 10 wt .-%
- the dried and compacted doping glasses can contain hydrofluoric acid and 0.001 to 10 wt .-% phosphoric acid in the mixture.
- the dried and compacted doping glasses can the
- Nitric acid such as the so-called p-etching, R-etching, S-etching or etch mixtures, etching mixtures consisting of flux and
- novel high-viscosity doping pastes can be synthesized on the basis of the sol-gel process and, if necessary, can be formulated further.
- a synthetic method is based on the dissolution of oxide precursors of the alumina in a solvent or a solvent mixture, preferably selected from the group of high-boiling glycol ethers or preferably high-boiling glycol ethers and alcohols, which
- a suitable acid preferably a carboxylic acid, and in this case particularly preferably with formic acid or acetic acid
- suitable complexing and chelating agents such as
- suitable ⁇ -diketones such as acetylacetone or for example 1, 3-cyclohexanedione, ⁇ - and ⁇ -ketocarboxylic acids and their esters, such as pyruvic acid and its esters acetoacetic acid and ethyl acetoacetate, dihydroxybenzoic acids, such as 3, 5 -dihydroxybenzoic acid, and / or oximes , such as acetaldoxime, as well as other such cited compounds, as well as any mixtures of the aforementioned complex, chelating and condensation degree controlling agents, is completed.
- the solution of the alumina precursor is then at room temperature with a mixture consisting of the o. G.
- Solvent or solvent mixture and water added dropwise and then heated at 80 ° C for up to 24 h under reflux.
- the gelation of the aluminum oxide precursor can be controlled in a targeted manner via the molar ratio of the aluminum oxide precursor to water, to the acid used and to the amounts of substance and the type of complexing agent used. The necessary ones
- favoring solvents such as high-boiling glycols, Glycol ethers, Glycolethercarboxylate and further solvents such as
- solvent mixtures adjusted to their desired properties and optionally diluted is a mixture consisting of condensed oxide precursors of
- a suitable carboxylic anhydride such as acetic anhydride, formyl acetate or propionic anhydride or comparable
- the paste rheology can continue to be adjusted and rounded according to and with the also previously described in detail auxiliaries and additives according to specific requirements, the use of waxes and waxy compounds according to the invention has a special role.
- the waxes and waxy compounds according to the invention has a special role.
- waxy compounds are dissolved or melted in the gelled paste mixture, if necessary. Refluxing and with intimate stirring. The entire formulation is then allowed to cool with intimate stirring, adjusting the desired properties of the final pseudoplastic mixture.
- homogeneously monophasic or emulsified biphasic mixtures are obtained.
- An alternative method of synthesis is based on the preparation of a condensed sol of oxide precursors of silicon dioxide and
- Benzyl benzoate, butyl benzoate, THF or comparable initially charged, with a suitable carboxylic anhydride, such as acetic anhydride,
- Formyl acetate or propionic anhydride or comparable and dissolved under reflux or reacted until a clear solution is present.
- suitable precursors of the silicon dioxide optionally pre-dissolved in the reaction solvent used, drop by drop.
- the reaction mixture is then heated or refluxed for up to 24 hours.
- the sol is treated with suitable solvents such as, for example, glycols, glycol ethers, glycol ether carboxylates and also solvents such as terpineol, texanol, butyl benzoate, benzyl benzoate, dibenzyl ether, butyl benzyl phthalate, or their solvent mixtures in which suitable complexing and chelating agents, for example suitable ⁇ - Diketones, such as acetylacetone or, for example, 1, 3-cyclohexanedione, ⁇ - and ⁇ -ketocarboxylic acids and their esters, such as pyruvic acid and its esters
- suitable solvents such as, for example, glycols, glycol ethers, glycol ether carboxylates and also solvents such as terpineol, texanol, butyl benzoate, benzyl benzoate, dibenzyl ether, butyl benzyl phthalate, or their solvent mixtures in which
- Acetoacetic acid and ethyl acetoacetate dihydroxybenzoic acids, such as, for example, 3, 5-dihydroxybenzoic acid, and / or oximes, such as
- acetaldoxime and other such cited compounds, as well as any mixtures of the aforementioned complex, chelating agents and the degree of condensation controlling agents are already pre-dissolved in the accompaniment of water, added and stirred, if necessary. At the same time increases the temperature of the reaction mixture.
- the duration of mixing of the two solutions can be between 0.5 minutes and five hours.
- the total mixture is tempered with the aid of an oil bath whose temperature is usually set to 155 ° C. After completing a suitable known duration of mixing of the two partial solutions completed
- the reaction mixture thus completed is then heated to reflux for one to four hours.
- the warm gelled mixture can now be prepared using other excipients already mentioned above,
- EXAMPLE 1 A glass flask is charged with 55.2 g of ethylene glycol monobutyl ether (EGB) and 20.1 g of aluminum tri-sec-butylate (ASB) and stirred until a homogeneous mixture is obtained. To this mixture are added 7.51 g of glacial acetic acid, 0.8 g of acetaldoxime and 0.49 g of acetylacetone with stirring.
- EGB ethylene glycol monobutyl ether
- ASB aluminum tri-sec-butylate
- Mass loss of volatile reaction products is 12.18 g.
- the distilled mixture is then diluted with 62.3 g of Texanol and another 65 g of EGB, and mixed with a mixed condensed sol consisting of precursors of boron oxide and silicon dioxide.
- the hybrid sol of silica and boron oxide is prepared as follows: 6.3 g Tetraacetoxydiborat be presented in 40 g of benzyl benzoate and treated with 15 g of acetic anhydride. The mixture is heated in an oil bath to 80 ° C and after a clear solution is formed, 4.6 g
- the hybrid sol is then also subjected to a vacuum distillation at 70 ° C until reaching a final pressure of 30 mbar, the mass loss of volatile reaction products is 7.89 g.
- the 110 g of the total mixture is mixed with 9 g of synchro wax and heated with stirring to 150 ° C until complete dissolution and clear mixing. Subsequently, the mixture is allowed to cool with intensive stirring. The result is a pseudoplastic and very good printable paste.
- silicon dioxide precursors in this case a Mixture consisting of 2.3 g of dimethyldimethoxysilane and 3.4 g
- the paste according to Example 1 using a conventional screen printing machine and a screen with 350 mesh, 16 ym thread size (stainless steel) and an emulsion thickness of 8 - 12 pm using a doctor speed of 170 mm / s and a squeegee pressure of 1 bar to one Wafer printed and then subjected to drying in a continuous furnace.
- the heating zones in the continuous furnace are set to 350/350/375/375/375/400/400 ° C.
- FIG. 1 shows a silicon wafer printed with the hybrid gel according to the invention after it has been dried in a continuous furnace.
- the hybrid gel used corresponds to a composition prepared according to Example 3.
- the paste according to Example 1 is prepared by means of a conventional
- the wafer On boron diffusion, the wafer is exposed to phosphorous diffusion with phosphoryl chloride at low temperature, 880 ° C, in the same process tube. After the diffusion and the cooling of the wafer, it is freed from the glasses present on the wafer surfaces by means of etching with dilute hydrofluoric acid. The area, which previously with the
- Boron paste according to the invention was printed, has a hydrophilic
- the SIMS (secondary ion mass spectrometry) depth profile of the dopants is determined.
- a boron doping from the wafer surface to that of the silicon is determined.
- Paste layer thus acts as diffusion barrier against a typical phosphorus diffusion.
- FIG. 2 shows the SIMS profile of a rough silicon surface, which is printed with the boron paste according to the invention and subsequently printed
- EGB ethylene glycol monobutyl ether
- ASB aluminum tri-sec-butylate
- mixture 1 and mixture 2 are combined in a glass flask of suitable size with the addition of 261 g Texanol and 40 g
- the gel hybrid sol is transferred to a stirred tank of suitable size and mixed with 116 g Synchrowachs ERLC. Under heating and intensive stirring of the mixture to 150 ° C is the
- Wax melted and dissolved in the heat in the gel. After complete dissolution of the wax, the heat supply is interrupted and the mixture is allowed to cool while stirring. After cooling, a buttery, pseudoplastic, yellowish-white, very good printable paste is obtained.
- the viscosity of the paste is 7.5 Pa * s at a shear rate of 25 / s and a temperature of 23 ° C.
- the paste is made by means of a screen printer using a trampoline sieve with stainless steel mesh (400 mesh, 18 ⁇ m
- a sieve jump of 2 mm a printing speed of 200 mm / s, a flood speed of 200 mm / s, a squeegee pressure of 60 N during printing and a squeegee pressure of 20 N during flooding, and using a carbon fiber squeegee with polyurethane rubber of Shore hardness of 65 °.
- the printed wafers are then heated to 400 ° C
- the belt speed is 90 cm / s.
- the length of the heating zones is 3 m.
- the paste transfer is 0.65 mg / cm 2 .
- FIG. 3 shows the micrograph of a line screen printed and dried with a doping paste according to Example 5.
- FIG. 4 shows a micrograph of a paste surface screen-printed and dried with a doping paste according to Example 5.
- FIG. 5 shows a micrograph of a paste surface screen-printed and dried with a doping paste according to Example 5.
- the printing is done with a sieve with stainless steel mesh (400/18, 10 pm
- Emulsion thickness over the fabric The paste application is 0.9 mg / cm 2 .
- the wafers are left on a hotplate for three minutes at 400 ° C
- Phosphorylchloriddampf achieved, which, transported by a stream of inert gas, is introduced into the hot furnace atmosphere. Due to the high temperature prevailing in the oven and at the same time in the oven Oxygen furnace atmosphere, the phosphoryl chloride is burned to phosphorus pentoxide. The phosphorus pentoxide precipitates in conjunction with a silicon dioxide forming on the wafer surface due to the presence of oxygen in the furnace atmosphere.
- the mixture of the silicon dioxide with the phosphorus pentoxide is also referred to as PSG glass. From the PSG glass on the
- a PSG glass can form only on the surface of the boron paste. If the boron paste acts as a diffusion barrier to phosphorus, then at those points where the boron paste is already present, there can be none
- Phosphorus diffusion takes place, but only one of Born itself, which diffuses from the paste layer in the silicon wafer.
- This type of co-diffusion can be carried out in various embodiments.
- the phosphoryl chloride can be burned in the furnace at the beginning of the diffusion process. At the beginning of the process, one generally understands one in the industrial production of solar cells
- Possibilities can, depending on the particular requirements, also any combinations of the phases of the possible entry of phosphoryl chloride are made in the diffusion furnace. Some of these options are outlined. In Figure 6, the possibility of using a second plateau temperature is not shown.
- the wafers printed with the boron paste are subjected to a co-diffusion process, as shown, in which the entry of the
- Plateau temperature takes place, which to achieve a boron diffusion necessary, in this case 950 ° C.
- the wafers in the process boat are arranged in pairs in such a way that their sides printed with boron paste are in each case facing one another. In each case, a wafer is received in a slot of the process boat.
- the nominal distance between the substrates is thus about 2.5 mm. in the
- the wafers are subjected to glass etching in dilute hydrofluoric acid and then their
- Sheet resistance of 41 ⁇ / D while that of the printed with the boron paste opposite side of the wafer has a sheet resistance of 68 ⁇ / D.
- the side which has a layer resistance of 41 ⁇ / D, is doped exclusively with p-, ie with boron, whereas the
- FIG. 6 shows a micrograph of a line screen printed and dried with a doping paste according to Example 5.
- FIG. 7 shows an arrangement of wafers in a process boat during a co-diffusion process.
- Wafer surfaces are opposite.
- Reaction mixture is heated in an oil bath to 80 ° C and for the Refluxed for 8 hours to 60 hours. During the reaction, the transparent mixture turns from colorless to yellow-orange. After completion of the reaction, the reaction mixture is at
- Distillation loss is 60.02 g. 10 g of the residue are dissolved in 35.9 g Diethylenglycoletherdibenzoat and then diluted with 34.7 g Butoxyethoxyethylacetat and 5 g Triethylorthoformiat.
- the solution is then heated to 90 ° C and treated with 8.5 g of ERLC wax (one triglyceride having chain lengths of the fatty acids included from C18 to C36) and dissolved in the mixture.
- the solution is allowed to cool with vigorous stirring. During cooling, part of the wax separates from the solution and is emulsified in the mixture.
- Silicon wafer surfaces can be printed.
- the paste is made with the help of a0
- the printed wafers are then heated to 400 ° C
- FIG. 8 shows the micrograph of a line screen-printed with a doping paste according to Example 6, and dried.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne une nouvelle pâte imprimable se présentant sous la forme d'un gel hybride à base de précurseurs d'oxydes inorganiques, et apte à être utilisée dans un procédé simplifié destiné à la fabrication de cellules solaires, le gel hybride selon l'invention fonctionnant aussi bien comme milieu dopant que comme barrière de diffusion.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15001071 | 2015-04-15 | ||
EP15180681 | 2015-08-12 | ||
PCT/EP2016/000516 WO2016165810A1 (fr) | 2015-04-15 | 2016-03-24 | Milieux dopants, formant barrière à une diffusion parasitaire et imprimables, à base de sol-gel et destinés au dopage local de tranches de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3284110A1 true EP3284110A1 (fr) | 2018-02-21 |
Family
ID=55628981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16711776.1A Withdrawn EP3284110A1 (fr) | 2015-04-15 | 2016-03-24 | Milieux dopants, formant barrière à une diffusion parasitaire et imprimables, à base de sol-gel et destinés au dopage local de tranches de silicium |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180062022A1 (fr) |
EP (1) | EP3284110A1 (fr) |
KR (1) | KR20170137837A (fr) |
CN (1) | CN107532300A (fr) |
TW (1) | TW201710185A (fr) |
WO (1) | WO2016165810A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115224152B (zh) * | 2021-03-31 | 2024-04-16 | 浙江爱旭太阳能科技有限公司 | 太阳能电池及其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19910816A1 (de) * | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
EP2683777A2 (fr) | 2011-03-08 | 2014-01-15 | Merck Patent GmbH | Barrière de métallisation à base d'oxyde d'aluminium |
MY165641A (en) | 2011-03-08 | 2018-04-18 | Merck Patent Gmbh | Formulations of printable aluminium oxide inks |
JP6043302B2 (ja) | 2011-03-08 | 2016-12-14 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 酸化アルミニウムペーストおよびその使用方法 |
JP5842931B2 (ja) * | 2012-01-10 | 2016-01-13 | 日立化成株式会社 | 太陽電池用基板の製造方法 |
WO2013125252A1 (fr) * | 2012-02-23 | 2013-08-29 | 日立化成株式会社 | Composition de formation de couche de diffusion d'impureté, procédé de fabrication d'un substrat semi-conducteur doté d'une couche de diffusion d'impureté et procédé de fabrication d'un élément de cellule solaire |
US9306087B2 (en) * | 2012-09-04 | 2016-04-05 | E I Du Pont De Nemours And Company | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
US10134942B2 (en) * | 2012-12-28 | 2018-11-20 | Merck Patent Gmbh | Doping media for the local doping of silicon wafers |
JP2016506631A (ja) * | 2012-12-28 | 2016-03-03 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | シリコンウェハの局所ドーピングのための液体ドーピング媒体 |
-
2016
- 2016-03-24 US US15/565,955 patent/US20180062022A1/en not_active Abandoned
- 2016-03-24 CN CN201680021779.2A patent/CN107532300A/zh active Pending
- 2016-03-24 WO PCT/EP2016/000516 patent/WO2016165810A1/fr active Application Filing
- 2016-03-24 EP EP16711776.1A patent/EP3284110A1/fr not_active Withdrawn
- 2016-03-24 KR KR1020177032777A patent/KR20170137837A/ko unknown
- 2016-04-14 TW TW105111694A patent/TW201710185A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20180062022A1 (en) | 2018-03-01 |
TW201710185A (zh) | 2017-03-16 |
CN107532300A (zh) | 2018-01-02 |
KR20170137837A (ko) | 2017-12-13 |
WO2016165810A1 (fr) | 2016-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2938761A1 (fr) | Substances de dopage destinées au dopage local de tranches de silicium | |
WO2016107661A1 (fr) | Dopage laser de semi-conducteurs | |
EP1435116B1 (fr) | Substances de gravure et de dopage combinees | |
EP2938763A1 (fr) | Barrières de diffusion imprimables pour tranche de silicium | |
EP3284111A1 (fr) | Pâte dopée au bore utilisable en sérigraphie, inhibant simultanément la diffusion de phosphore lors de processus de co-diffusion | |
WO2014101990A1 (fr) | Substances de dopage liquides destinées au dopage local de tranches de silicium | |
EP2683777A2 (fr) | Barrière de métallisation à base d'oxyde d'aluminium | |
EP3284109B1 (fr) | Procédé de fabrication de cellules photovoltaïques à l'aide de milieux dopant inhibant la diffusion du phosphore et imprimables | |
EP1902000A1 (fr) | Agents de gravure et de dopage combines pour des couches de dioxyde de silicium et le silicium situe en dessous | |
EP2865018A1 (fr) | Procédé de fabrication de cellules solaires à champ de surface arrière local (lbsf) | |
WO2016107662A1 (fr) | Procédé pour doper des semiconducteurs | |
WO2011050889A2 (fr) | Procédé de fabrication de cellules solaires à émetteur sélectif | |
WO2012083944A2 (fr) | Procédé pour produire des cellules solaires en silicium présentant une face avant texturée et une surface arrière lisse | |
DE102012107372B4 (de) | Alkalischer Ätzprozess und Vorrichtung zur Durchführung des Verfahrens | |
WO2016150548A2 (fr) | Barrière antidiffusion et antialliage pâteuse imprimable pour la fabrication de cellules solaires cristallines au silicium à haut rendement | |
WO2014101988A1 (fr) | Substances d'oxydes destinées à extraire par effet getter des impuretés de tranches de silicium | |
WO2016165810A1 (fr) | Milieux dopants, formant barrière à une diffusion parasitaire et imprimables, à base de sol-gel et destinés au dopage local de tranches de silicium | |
WO2016150549A2 (fr) | Encre imprimable destinée à être utilisée comme barrière antidiffusion et antialliage pour la fabrication de cellules solaires cristallines au silicium à haut rendement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20171018 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20201001 |