EP3276049A4 - Sapphire member and method for manufacturing sapphire member - Google Patents

Sapphire member and method for manufacturing sapphire member Download PDF

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Publication number
EP3276049A4
EP3276049A4 EP16768972.8A EP16768972A EP3276049A4 EP 3276049 A4 EP3276049 A4 EP 3276049A4 EP 16768972 A EP16768972 A EP 16768972A EP 3276049 A4 EP3276049 A4 EP 3276049A4
Authority
EP
European Patent Office
Prior art keywords
sapphire member
manufacturing
sapphire
manufacturing sapphire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16768972.8A
Other languages
German (de)
French (fr)
Other versions
EP3276049B1 (en
EP3276049A1 (en
Inventor
Masahiro Okumura
Shinya Kato
Yoshihide Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of EP3276049A1 publication Critical patent/EP3276049A1/en
Publication of EP3276049A4 publication Critical patent/EP3276049A4/en
Application granted granted Critical
Publication of EP3276049B1 publication Critical patent/EP3276049B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
EP16768972.8A 2015-03-26 2016-03-28 Sapphire member and method for manufacturing sapphire member Active EP3276049B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015063735 2015-03-26
PCT/JP2016/059900 WO2016153070A1 (en) 2015-03-26 2016-03-28 Sapphire member and method for manufacturing sapphire member

Publications (3)

Publication Number Publication Date
EP3276049A1 EP3276049A1 (en) 2018-01-31
EP3276049A4 true EP3276049A4 (en) 2018-12-05
EP3276049B1 EP3276049B1 (en) 2021-03-24

Family

ID=56978981

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16768972.8A Active EP3276049B1 (en) 2015-03-26 2016-03-28 Sapphire member and method for manufacturing sapphire member

Country Status (5)

Country Link
US (1) US10351969B2 (en)
EP (1) EP3276049B1 (en)
JP (1) JP6633615B2 (en)
CN (1) CN107407006B (en)
WO (1) WO2016153070A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6851017B2 (en) 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 Device and its manufacturing method
JP6741777B2 (en) * 2016-11-02 2020-08-19 京セラ株式会社 Color wheel substrate, color wheel and projector, and method for manufacturing color wheel substrate
WO2018124183A1 (en) * 2016-12-28 2018-07-05 京セラ株式会社 Outdoor image irradiation device
JPWO2019225759A1 (en) * 2018-05-24 2021-05-13 京セラ株式会社 Optical device
JP7101244B2 (en) * 2018-05-24 2022-07-14 京セラ株式会社 Optical equipment
WO2019225758A1 (en) * 2018-05-24 2019-11-28 京セラ株式会社 Optical device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008031027A (en) * 2006-06-28 2008-02-14 Namiki Precision Jewel Co Ltd Sapphire single crystal substrate
JP2010168280A (en) * 2010-03-08 2010-08-05 Kyocera Corp Single crystal sapphire substrate

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2750063B2 (en) * 1991-12-17 1998-05-13 松下電器産業株式会社 Semiconductor interface formation method
US6083812A (en) * 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
ATE550461T1 (en) * 1997-04-11 2012-04-15 Nichia Corp GROWTH METHOD FOR A NITRIDE SEMICONDUCTOR
US6091085A (en) 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
JP3929008B2 (en) * 2000-01-14 2007-06-13 シャープ株式会社 Nitride-based compound semiconductor light-emitting device and method for manufacturing the same
CH696907A5 (en) 2003-02-18 2008-01-31 Schott Ag A process for the manufacture of hexagonal monocrystals and their use as a substrate for semiconductor devices.
KR100679737B1 (en) * 2003-05-19 2007-02-07 도시바세라믹스가부시키가이샤 A method for manufacturing a silicon substrate having a distorted layer
JP2006062931A (en) * 2004-08-30 2006-03-09 Kyocera Corp Sapphire substrate and its heat treatment method, and method of crystal growth
JP4742360B2 (en) * 2005-05-26 2011-08-10 並木精密宝石株式会社 Method for arranging micro holes in an array, AFM standard sample, and AFM stage
CN1743514A (en) * 2005-08-11 2006-03-08 周永宗 Annealing treatment method of crystal in neutral and inert atmosphere
WO2007123093A1 (en) * 2006-04-17 2007-11-01 Inter Optec Co., Ltd. Single crystal sapphire substrate
WO2008047907A1 (en) * 2006-10-20 2008-04-24 Panasonic Electric Works Co., Ltd. Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element
JP5145488B2 (en) * 2007-04-02 2013-02-20 住友金属鉱山株式会社 Sapphire single crystal substrate and manufacturing method thereof
WO2011065403A1 (en) * 2009-11-26 2011-06-03 昭和電工株式会社 Single-crystal sapphire for producing single-crystal sapphire substrate for led, single-crystal sapphire substrate for led, luminescent element, and processes for producing these
US8110484B1 (en) * 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same
CN102634850A (en) * 2012-03-31 2012-08-15 江苏鑫和泰光电科技有限公司 Annealing method of sapphire wafer
CN202595343U (en) * 2012-04-01 2012-12-12 江苏鑫和泰光电科技有限公司 Sapphire substrate annealing furnace
CN102769082B (en) * 2012-07-02 2015-04-29 杭州士兰明芯科技有限公司 Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate
KR101439380B1 (en) * 2012-10-31 2014-09-11 주식회사 사파이어테크놀로지 Heat Treatment Method and Apparatus for Sapphier Single Crystal
CN203007496U (en) * 2012-12-29 2013-06-19 青岛嘉星晶电科技股份有限公司 Sapphire annealing tool
CN103014874A (en) * 2013-01-11 2013-04-03 焦作市光源晶电科技有限公司 Sapphire crystal annealing process
CN103540998A (en) * 2013-08-20 2014-01-29 曾锡强 Annealing process for growing large-size sapphire crystal by kyropoulos method
CN103643300B (en) * 2013-11-26 2017-04-12 浙江上城科技有限公司 Annealing method applied to sapphire processing
CN104088014B (en) * 2014-07-11 2016-08-17 江苏中电振华晶体技术有限公司 A kind of bar-shaped sapphire crystal growth equipment and growing method thereof
JP2016044099A (en) * 2014-08-22 2016-04-04 住友金属鉱山株式会社 Production method of aluminum oxide single crystal wafer, and aluminum oxide single crystal wafer
JP2016047784A (en) * 2014-08-27 2016-04-07 住友金属鉱山株式会社 Production method of aluminum oxide single crystal wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008031027A (en) * 2006-06-28 2008-02-14 Namiki Precision Jewel Co Ltd Sapphire single crystal substrate
JP2010168280A (en) * 2010-03-08 2010-08-05 Kyocera Corp Single crystal sapphire substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CUCCUREDDU F ET AL: "Surface morphology of c-plane sapphire (@a-alumina) produced by high temperature anneal", SURFACE SCIENCE, NORTH-HOLLAND, AMSTERDAM, NL, vol. 604, no. 15-16, 15 August 2010 (2010-08-15), pages 1294 - 1299, XP027473899, ISSN: 0039-6028, [retrieved on 20100815], DOI: 10.1016/J.SUSC.2010.04.017 *
See also references of WO2016153070A1 *

Also Published As

Publication number Publication date
JPWO2016153070A1 (en) 2017-12-21
CN107407006B (en) 2020-09-01
US10351969B2 (en) 2019-07-16
JP6633615B2 (en) 2020-01-22
WO2016153070A1 (en) 2016-09-29
EP3276049B1 (en) 2021-03-24
US20180112332A1 (en) 2018-04-26
EP3276049A1 (en) 2018-01-31
CN107407006A (en) 2017-11-28

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