EP3190627B1 - Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données - Google Patents

Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données Download PDF

Info

Publication number
EP3190627B1
EP3190627B1 EP15837815.8A EP15837815A EP3190627B1 EP 3190627 B1 EP3190627 B1 EP 3190627B1 EP 15837815 A EP15837815 A EP 15837815A EP 3190627 B1 EP3190627 B1 EP 3190627B1
Authority
EP
European Patent Office
Prior art keywords
skyrmion
magnet
end region
magnetic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP15837815.8A
Other languages
German (de)
English (en)
Other versions
EP3190627A4 (fr
EP3190627A1 (fr
Inventor
Naoto Nagaosa
Wataru Koshibae
Junichi Iwasaki
Masashi Kawasaki
Yoshinori Tokura
Yoshio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN Institute of Physical and Chemical Research
Original Assignee
RIKEN Institute of Physical and Chemical Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN Institute of Physical and Chemical Research filed Critical RIKEN Institute of Physical and Chemical Research
Publication of EP3190627A1 publication Critical patent/EP3190627A1/fr
Publication of EP3190627A4 publication Critical patent/EP3190627A4/fr
Application granted granted Critical
Publication of EP3190627B1 publication Critical patent/EP3190627B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0866—Detecting magnetic domains
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • the present invention relates to a magnetic element capable of generating, erasing, and detecting skyrmions, a skyrmion memory, a skyrmion memory-device, a solid-state electronic device, a data-storage device, a data processing device, and a data communication device.
  • a magnetic element that uses the magnetic moment of a magnet as digital information.
  • This magnetic element includes a nanoscale magnetic structure that functions as an element of a nonvolatile memory that does not require power when holding information. Based on advantages such as ultra-high density resulting from the nanoscale magnetic structure, this magnetic element is expected to be used as a high-capacity information storage medium, and the importance thereof increases when used as a memory device of an electronic device.
  • Magnetic shift registers have been proposed, mainly by IBM in the US, as other candidates for next-generation magnetic memory devices.
  • a magnetic shift register drives a magnetic domain wall to transfer the magnetic moment arrangement thereof through a current, and reads stored information (see Patent Document 1).
  • WO 2016/002806 A1 (with priority before the filing date, but published after the filing date) concerns a skyrmion memory circuit in which magnetic element skyrmions can be circularly transferred.
  • current is applied in a closed-channel shaped magnetic body between an outer circumferential electrode that is connected to the outer circumference of the closed-channel shape and an inner circumferential electrode that is connected to the inner circumference of the closed channel shape, the skyrmions are transferred in a direction essentially perpendicular to the direction of the applied current, and the skyrmions are caused to circle within the closed-channel shaped magnetic body.
  • Fig. 57 is a schematic view of the principles of driving a magnetic domain wall with current.
  • the domain wall is a boundary of a magnetic region where the orientations of magnetic moments are phase-inverted.
  • the domain walls in a magnetic shift register 1 are shown by solid lines.
  • the magnetic domain walls are driven by causing current with the orientation indicated by the arrows to flow in the magnetic shift register 1.
  • the magnetism caused by the orientation of the magnetic moment positioned above the magnetic sensor 2 changes. This magnetic change is sensed by the magnetic sensor 2, and magnetic information is derived.
  • this type of magnetic shift register 1 requires a large current when moving the magnetic domain walls, and there is a disadvantage that the transfer velocity of the magnetic domain walls is low.
  • the inventors of the present application proposed a skyrmion magnetic element that uses skyrmions generated in the magnet as a storage unit (see Patent Document 2).
  • the inventors of the present application showed that it is possible to drive skyrmions with current.
  • Non-Patent Document 1 Nagaosa Naoto, Tokura Yoshinori, “Topological properties and dynamics of magnetic skyrmions,” Nature Nanotechnology, US, Nature Publishing Group, December 4, 2013, Vol. 8, pp. 899-911
  • a skyrmion has an extremely small magnetic structure with a diameter from 1 nm to 500 nm, and since this structure can be held for a long time, there has been increasing expectation of skyrmions being used in memory elements. However, the details of the mechanism for generating, erasing, and detecting skyrmions is not clear.
  • the inventor of the present invention has an objective to clarify the details of the relationship between the generation and erasing states of skyrmions and, based on this, invent a magnetic element and a skyrmion memory that can generate and erase skyrmions with magnetic fields and detect skyrmions, and to provide a skyrmion-memory embedded solid-state electronic device, a data-storage device, a data processing device, and a communication device.
  • a chiral magnet is one example of a magnet that can form skyrmions.
  • a chiral magnet is a magnet in which the magnetic moment arrangement when an external magnetic field is not applied has a magnetically ordered phase (spiral magnetic phase) that rotates in a spiral relative to a progression direction of the magnetic moment.
  • spiral magnetic phase a magnetically ordered phase
  • the spiral magnetic phase transitions through a skyrmion crystal phase in which the skyrmions arranged in a densest crystal lattice are stabilized to a ferromagnetic phase.
  • Fig. 1 is a schematic view of an exemplary skyrmion 40 that is a nanoscale magnetic structure formed in a magnet 11.
  • each arrow indicates the orientation of the magnetic moment in the skyrmion 40.
  • the x axis and the y axis are orthogonal to each other, and the z axis is orthogonal to the xy plane.
  • the magnet 11 has a plane that is parallel to the xy plane.
  • the magnetic moment having an orientation in every direction arranged in the magnet 11 forms the skyrmion 40.
  • the orientation of the magnetic field applied to the magnet 11 is the z direction.
  • the magnetic moment of the outermost circumference of the skyrmion 40 in the present example is oriented in the +z direction.
  • the magnetic moment in the skyrmion 40 is arranged in a manner to rotate in a spiral from the outermost circumference toward the inside. Furthermore, the orientation of the magnetic moment changes gradually towards the center of the spiral, from the +z direction to the -z direction, in accordance with the rotation in this spiral.
  • each magnetic moment forming the skyrmion 40 is a magnetic moment with the same orientation in the thickness direction of the magnet 11.
  • the magnetic moment has the same orientation from a front surface to a back surface in a depth direction (z direction) of the board.
  • the outermost circumference refers to the circumference of the magnetic moment oriented in the same direction as the external magnetic field shown in Fig. 1 .
  • a skyrmion number Nsk characterizes the skyrmion 40, which is the nanoscale magnetic structure having the spiral structure.
  • the skyrmion number Nsk is expressed by Expression 1 and Expression 2 shown below.
  • the polar angle ⁇ (r) between the magnetic moment and the z axis is a continuous function of the distance r from the center of the skyrmion 40.
  • the vector amount n(r) represents the orientation of the magnetic moment of the skyrmion 40 at the position r.
  • Fig. 2 is a schematic view of skyrmions 40 in which the helicity ⁇ is different.
  • FIG. 2 shows the coordinates adopted by the magnetic moment n (right-handed system). Since a right-handed system is used, the n z axis adopts an orientation from behind to in front of the plane of the drawing, relative to the n x axis and the n y axis. The relationship between the shading and the orientation of the magnetic moment is shown in (E) of Fig. 2 .
  • the shading indicates the orientation of the magnetic moment.
  • Each arrow in (A) to (D) of Fig. 2 indicates the magnetic moment at a prescribed distance from the center of the skyrmion 40.
  • the magnetic structures shown in (A) to (D) of Fig. 2 are each in a state defining a skyrmion 40.
  • the region having the lightest shading, such as the outermost circumference in (A) to (D) of Fig. 2 indicates a magnetic moment in a direction from behind to in front of the plane of the drawing. In the drawings, this magnetic moment is expressed with a white color.
  • the region having the darkest shading such as the center in (A) to (D) of Fig. 2 , indicates a magnetic moment in a direction from in front of to behind the plane of the drawing. In the drawings, this magnetic moment is expressed with a black color.
  • the skyrmions 40 having the structures shown in (A) to (D) of Fig. 2 exist stably once generated, and work as carriers that serve to transfer information in the magnet 11 to which an external magnetic field has been applied.
  • Fig. 3 is a schematic view of a magnetic element 10 that is capable of generating skyrmions 40.
  • the skyrmion memory 100 stores bit information using the skyrmions 40. For example, the presence or lack of a skyrmion 40 in the magnet 11 corresponds to one bit of information.
  • the skyrmion memory 100 in the present example includes the magnetic element 10, a generating unit 20 of the magnetic fields, a unit for measuring 30, and a power supply for coil current 50.
  • the magnetic element 10 is capable of generating and erasing skyrmions 40.
  • the magnetic element 10 in the present example is an element formed with a thin layer shape and a thickness less than or equal to 500 nm.
  • the magnetic element 10 is formed using a technique such as MBE (Molecular Beam Epitaxy) or sputtering.
  • the magnetic element 10 includes the magnet 11, a current path 12, and a skyrmion sensor 15.
  • the magnet 11 exhibits at least a skyrmion crystal phase and a ferromagnetic phase, according to an applied magnetic field.
  • the skyrmion crystal phase refers to a material that can generate the skyrmions 40 in the magnet 11.
  • the magnet 11 is a chiral magnet, and is formed by FeGe, MnSi, or the like.
  • the magnet 11 has a structure surrounded by a nonmagnetic material.
  • the structure surrounded by the nonmagnetic material refers to a structure in which the magnet 11 is surrounded by the nonmagnetic material in all directions.
  • the magnet 11 may be formed with a thin layer shape.
  • the magnet 11 has a thickness that is approximately less than or equal to 10 times the diameter of the skyrmion 40, for example.
  • the diameter of the skyrmion 40 refers to the diameter of the outermost circumference of the skyrmion.
  • the current path 12 surrounds a region including the end portions of the magnet 11 on one surface of the magnet 11.
  • the current path 12 may be electrically isolated from the magnet 11 using an insulating material or the like.
  • the current path 12 in the present example is a coil current circuit formed with a U shape.
  • the U shape is not limited to having rounded corners, and may be a shape with right-angle corners such as shown in Fig. 3 .
  • the current path 12 does not need to form a closed region in the xy plane.
  • the combination of the current path 12 and the end portions need only form a closed region in the front surface of the magnet 11.
  • the current path 12 is connected to the power supply for coil current 50, and a coil current flows therethrough.
  • the current path 12 is formed by a non-magnetic metal material such as Cu, W, Ti, Al, Pt, Au, TiN, or AlSi.
  • the region surrounded by the current path 12 is referred to as a coil region Ac.
  • the coil region A C in a case where the region surrounded by the current path 12 includes an end portion of the magnet 11, is referred to in particular as the end region A.
  • the current path 12 in the present example has a continuous conducting path that, in the xy plane, transects an end portion of the magnet 11 from the nonmagnetic material side to the magnet 11 side at least once and transects the end portion of the magnet 11 from the magnet 11 side to the nonmagnetic material side at least once. In this way, the current path 12 surrounds a region including an end portion of the magnet 11.
  • the magnetic field strength in the end region A is Ha.
  • the skyrmion sensor 15 functions as a magnetic sensor for detecting skyrmions.
  • the skyrmion sensor 15 detects the generation and erasing of skyrmions 40.
  • the skyrmion sensor 15 is a resistance element with a resistance value that changes according to the presence or lack of a skyrmion 40.
  • the skyrmion sensor 15 in the present example is a tunnel magnetoresistance element (TMR element).
  • TMR element tunnel magnetoresistance element
  • the skyrmion sensor 15 has a layered structure formed by the nonmagnetic thin film 151 and the magnetic thin film 152 contacting the front surface of the magnet 11 on one surface of the magnet 11.
  • the magnetic thin film 152 enters a ferromagnetic phase with a magnetic moment oriented upward, due to the magnetic field with the upward orientation from the magnet 11.
  • the unit for measuring 30 is connected between the magnet 11 and the end portion of the magnetic thin film 152 that is opposite the magnet 11 side. In this way, the resistance value of the skyrmion sensor 15 can be sensed.
  • the skyrmion sensor 15 exhibits the minimum value for the resistance value when there are not any skyrmions 40 in the magnet 11, and this resistance value increases when the skyrmions 40 are present.
  • the resistance value of the skyrmion sensor 15 is determined according to the dependence of the probability of the electron tunnel current of the nonmagnetic thin film 151 on the orientation of the magnetic moment between the magnet 11 and the magnetic thin film 152 that has entered the ferromagnetic state.
  • the high resistance (H) and the low resistance (L) of the skyrmion sensor 15 correspond to the presence or lack of a skyrmion 40, and correspond to information of "1" or "0" stored in an information memory cell.
  • the generating unit 20 of the magnetic fields generates a magnetic field H and applies this magnetic field H perpendicularly to the magnet 11, in a direction from the back surface to the front surface of the magnet 11.
  • the back surface of the magnet 11 refers to the surface of the magnet 11 on the generating unit 20 of the magnetic fields side.
  • only one generating unit 20 of the magnetic fields is used.
  • a plurality of generating units 20 of the magnetic fields may be used. The number and the arrangement of these generating units 20 of the magnetic fields is not limited to this.
  • the unit for measuring 30 includes a power supply for measurement 31 and an ammeter 32.
  • the power supply for measurement 31 is provided between the magnet 11 and the skyrmion sensor 15.
  • the ammeter 32 measures the current for measurement that flows from the power supply for measurement 31.
  • the ammeter 32 is provided between the power supply for measurement 31 and the skyrmion sensor 15.
  • the unit for measuring 30 can detect the presence or lack of a skyrmion 40 with a small amount of power, by using a skyrmion sensor 15 with high sensitivity.
  • the power supply for coil current 50 is connected to the current path 12 and causes current to flow in the direction indicated by the arrow C.
  • the current flowing through the current path 12 causes a magnetic field oriented from the front surface to the back surface of the magnet 11 to be generated in the region surrounded by the current path 12.
  • the orientation of the magnetic field induced by the current flowing through the current path 12 is opposite the orientation of the uniform magnetic field H from the generating unit 20 of the magnetic fields, and therefore a weakened magnetic field Ha with an orientation from the back surface to the front surface of the magnet 11 is generated in the coil region Ac.
  • the power supply for coil current 50 may cause the coil current to flow in a direction opposite the direction used when generating the skyrmion 40. Furthermore, in a case where a plurality of current paths 12 are provided, a plurality of the power supplies for coil current 50 may be provided according to the number of current paths 12. Next, the generation of a skyrmion 40 in a chiral magnet is demonstrated in detail with an embodiment example.
  • the Hamiltonian H shown in Expression 4 is that of a chiral magnet. Concerning a dipole magnet, a frustrated magnet, and a magnet formed from a layered structure of a magnetic material and a nonmagnetic material, this H expression need only be replaced with a term describing the corresponding magnet.
  • a dipole magnet is a magnet in which the magnetic dipole interaction is important.
  • a frustrated magnet is a magnet that includes a spatial structure of a magnetic interaction that prefers to be in a magnetically disordered state.
  • a magnet formed from a layered structure of a magnetic material and a nonmagnetic material is a magnet in which the magnetic moment where the magnetic material contacts the nonmagnetic material is modulated by the spin trajectory interaction with the nonmagnetic material.
  • Fig. 4 is a schematic view of the magnetic field dependency of a chiral magnet magnetic phase.
  • the chiral magnet has a spiral magnetic phase in a ground state where the magnetic field is zero.
  • the chiral magnet transitions from the spiral magnetic phase to the skyrmion crystal phase (SkX).
  • the chiral magnet enters the ferromagnetic phase from the skyrmion crystal phase (SkX) at a magnetic field strength greater than or equal to the larger magnetic field strength Hf.
  • a is the lattice constant of the magnet 11
  • D is the magnitude of the Dzyaloshinskii-Moriya interaction and is a physical constant that is specific to the substance. Accordingly, the skyrmion diameter ⁇ becomes a substance-specific constant. As shown in Non-Patent Document 1, the skyrmion diameter ⁇ is 70 nm for FeGe and 18 nm for MnSi, for example.
  • Fig. 5 shows the change over time of the magnetic field Ha of the coil region A C in the simulation experiment.
  • the simulation experiment begins from a state where the magnet is in the ferromagnetic phase due to the magnetic field Ha of the coil region A C having a magnetic field strength greater than Hf.
  • the chiral magnet is in the ferromagnetic phase where skyrmions 40 are not present.
  • the coil current begins to flow through the current path 12 from the power supply for coil current 50.
  • the magnetic field Ha of the coil region A C is the sum of the magnetic field generated from the generating unit 20 of the magnetic fields and the magnetic field generated by the coil current.
  • Figs. 6 to 22 show the simulation results relating to the generation of the skyrmion 40.
  • the simulation in the present example is performed using the conditions and equations used in the description of Figs. 4 and 5 .
  • Fig. 6 shows a simulation result of skyrmion generation in a case where the coil region A C has a rectangular shape.
  • the sensors such as the skyrmion sensor 15 are not shown in the drawing.
  • the shape of the coil region Ac is formed corresponding to the shape of the current path 12.
  • the shape of the coil region A C formed corresponding to the shape of the current path 12 is also a rectangular shape.
  • the width of the coil region A C in a direction parallel to the width Wm of the magnet 11 is W C
  • the height of the coil region A C in a direction perpendicular to the width Wm of the magnet 11 is h C .
  • Fig. 6 shows a state of the magnet 11 when the magnetic field Ha of the coil region A C is reduced from 0.03J to 0.01J due to the magnetic field generated by the current path 12.
  • the skyrmions 40 are not generated. This is due to the stable state in which the magnetic moment is uniformly oriented in the z-axis direction in the coil region A C that does not include the end portion of the magnet 11.
  • the skyrmions 40 are not generated.
  • the magnetic element 10 in the present example remains in the ferromagnetic phase.
  • Fig. 7 shows a simulation result in a case where the height of the coil region A C is the same as the height of the magnet.
  • the coil region A C forms the end region A including the end portion of the magnet 11.
  • the width of the end region A in a direction parallel to the end portion of the magnet 11 is W
  • the height of the end region A in a direction perpendicular to the end portion of the magnet 11 is h.
  • the width W and height h of the end region A may be formed to be substantially parallel or substantially perpendicular to the end portion of the magnet 11.
  • the skyrmion 40 is generated by applying the magnetic field from the current path 12.
  • the magnetic moment in the end portion of the magnet 11 is oriented in a different direction than the z-axis direction.
  • the end portion of the magnet forms a dark portion.
  • the skyrmion 40 is generated in a manner to flow from a location at which the end portion of the magnet and the current path 12 intersect.
  • a plurality of skyrmions 40 are generated when the width W that is the length in the extension direction of the end portion of the end region A includes the top and bottom of the end portion of the magnet 11.
  • the magnetic element 10 is used as a memory, it is desired that only one skyrmion 40 be generated in a prescribed region.
  • Fig. 8 shows a simulation result of skyrmion generation.
  • Figs. 9 to 13 show simulation results of the generation of skyrmions 40 in cases where the width of the end region A is changed.
  • the dependency of skyrmion generation on the width W was investigated by fixing the height h of the end region A at ⁇ , which is half the height of the magnet 11, and changing the width W.
  • Figs. 9 to 13 show cases where the width of the end region A becomes smaller, in the stated order.
  • Fig. 14 shows a simulation result in a case where a position with a notch structure 13, which is a nonmagnetic material, is included.
  • a position with a notch structure 13 which is a nonmagnetic material
  • the position with a notch structure 13 of the magnet 11 effectively acts to generate the skyrmion 40.
  • Figs. 15 and 16 are drawings for comparing the height of the end region A to the effect exerted on the generation of the skyrmion 40.
  • the height h of the end region A is even less than in the embodiment example of Fig. 15 .
  • the skyrmion 40 cannot be generated if the height of the end region A is in a range of h ⁇ /2.
  • Figs. 17 to 22 show simulation results in a case of generating a skyrmion 40.
  • the magnetic moment of the end portion of the magnet 11 is inclined relative to a direction perpendicular to the magnet 11. Accordingly, the end portion of the magnet 11 is an origin point for the generation of the skyrmion 40.
  • the skyrmion 40 is generated from nearby the location where the end portion of the magnet 11 and the current path intersect.
  • the skyrmion 40 attempts to stabilize in the central portion of the magnet 11.
  • the shape of the skyrmion 40 when attempting to stabilize is an ellipse.
  • the ellipse may have a substantially elliptical shape, and is an example of a transient shape until the skyrmion 40 stabilizes.
  • the skyrmion 40 attempts to stabilize in the central portion of the magnet 11.
  • the shape of the skyrmion 40 when attempting to stabilize is an ellipse.
  • the skyrmion 40 becomes stable in the central portion of the magnet 11. If the applied time width (pulse width) T of the local magnetic field is greater than or equal to 3000(1/J), a skyrmion 40 is formed.
  • the erasing of the skyrmion 40 can be understood using basically the same thinking as when generating the skyrmion 40.
  • the motion of the skyrmion 40 when erasing is performed can be described in the same manner as when generating the skyrmion 40, using the equations shown in Expression 3 and Expression 4.
  • the magnet 11 in the present embodiment example is a chiral magnet, in the same manner as in the first embodiment example.
  • Fig. 4 provides a magnetic phase diagram of a chiral magnet.
  • Fig. 23 shows a state of the magnetic field Ha of the end region A when erasing a skyrmion 40.
  • Figs. 24 to 26 show a state of erasing a skyrmion 40 that has been generated in the magnet 11.
  • Fig. 24 is a simulation result of the state in which the skyrmion 40 has been generated.
  • Fig. 25 is a simulation result of the state in which the skyrmion 40 is in the process of being erased.
  • Fig. 26 is a simulation result of the state in which the skyrmion 40 has been erased.
  • one skyrmion 40 is generated.
  • the generation conditions in the present example are the same as the conditions described in the first embodiment example.
  • the magnetic field Ha of the end region A is strengthened in order to erase the skyrmion 40.
  • the skyrmion 40 in the left end of the end region A moves as shown in Fig. 25 , and moves further toward the bottom portion of the magnet 11.
  • the magnet returns to the initial state shown in Fig. 26 , and the erasing of the skyrmion 40 is completed.
  • the applied time of the magnetic field pulse for erasing is 3000(1/J).
  • the additional magnetic field strength at this time is +0.02J.
  • the additional magnetic field strength for generation is referred to as a pulse Ha1 to generate a skyrmion and the additional magnetic field strength for erasing is referred to as a pulse Ha2 to erase a skyrmion.
  • the pulse Ha1 to generate a skyrmion and the pulse Ha2 to erase a skyrmion in the present example are amounts having inverted positive/negative signs.
  • the magnetic element 10 can generate and erase a skyrmion 40 by changing the orientation with which coil currents having the same current strengths flow through the current path 12.
  • simulation results are shown in a case where a skyrmion 40 is erased.
  • the orientation of the magnetic field caused by the skyrmion pulse Ha2 to erase a skyrmion is the same as the orientation of the magnetic field caused by the skyrmion pulse to generate a skyrmion.
  • the coil region A C is set to be the end region A including the end portion of the magnet 11.
  • the diameter ⁇ of the skyrmion 40 is 50a.
  • the current path 12 is formed at a position shifted to the left side of the center on the bottom side of the magnet 11.
  • the current path 12 only needs to be formed at a position shifted to the left or to the right from the center on the bottom side of the magnet 11.
  • the current path 12 may be at a position shifted to the right side of the magnet 11.
  • the space d is defined as the width of the space between the end portion of the magnet 11 included in the end region A and another end portion that is closest thereto among the other adjacent end portions.
  • Fig. 27 shows the relationship between time and the magnetic field Ha of the end region A when performing the generation and erasing of a skyrmion 40.
  • the coil current pulse for generation is applied to the current path 12, and then the coil current pulse for erasing is applied to the current path 12.
  • the pulse Ha1 to generate a skyrmion and the pulse Ha2 to erase a skyrmion are each applied to the end region.
  • the pulse Ha1 to generate a skyrmion and the pulse Ha2 to erase a skyrmion are applied once each.
  • the end region A is shifted to the left side of the magnet 11 and the skyrmion 40 is erased.
  • the pulse Ha2 to erase a skyrmion may have the same orientation as the pulse Ha1 to generate a skyrmion.
  • the pulse Ha2 to erase a skyrmion has a value of 0.015J, which is less than the value of 0.03J for the ferromagnetic phase, if the end region A is shifted to the left side of the magnet 11, it is possible to erase the generated skyrmion 40. It should be noted that when the end region A is shifted too far toward the left end of the magnet 11, the skyrmion 40 cannot be generated even when the pulse Ha1 to generate a skyrmion is applied first.
  • the pulse Ha2 to erase a skyrmion is applied to the end region A and a pulling force F acts on the skyrmion 40 from the current path 12, but due to the Magnus force, the skyrmion 40 moves perpendicular to the pulling force F. In this way, the skyrmion 40 moves along the right side of the end region A.
  • the width Wm and the height hm of the magnet 11 in the third embodiment example must be greater than the diameter ⁇ of the skyrmion 40.
  • the width Wm and the height hm of the magnet 11 are each 60a. This is in order to ensure an empty space in which the generated skyrmion 40 moves in the center of the magnet 11. If the end region A is shifted to the right side of the magnet 11, the skyrmion 40 flows along the right side of the end region A from the top portion. The end portion on the right side of the magnet 11 absorbs and erases the skyrmion 40.
  • simulation results are shown for skyrmion erasing in a case where the end region A includes two regions that are an end region for generation A1 and an end region for erasing A2.
  • the height h2 of the end region for erasing A2 is equal to W2.
  • Fig. 31 shows the relationship between time and the magnetic fields Ha of the end region for generation A1 and the end region for erasing A2, when performing generation and erasing of a skyrmion 40.
  • the coil current pulse for generation is applied to the current path 12 for generation, and then the coil current pulse for erasing is applied to the current path 12 for erasing.
  • the pulse Ha1 to generate a skyrmion is applied to the end region for generation A1 and the pulse Ha2 to erase a skyrmion is applied to the end region for erasing A2.
  • the pulse Ha1 to generate a skyrmion and the pulse Ha2 to erase a skyrmion in the present example have the same orientation and the same magnitude.
  • the end region for generation A1 has a magnetic field Ha of 0.01J due to the pulse Ha1 to generate a skyrmion.
  • the end region for erasing A2 also has a magnetic field Ha of 0.01J due to the pulse Ha2 to erase a skyrmion. In this way, the generation and erasing of the skyrmion 40 are possible.
  • Figs. 32 to 34 show simulation results in a case where the end region for generation A1 and the end region for erasing A2 are included.
  • the pulse Ha2 to erase a skyrmion is applied to the end region for erasing A2 and a pulling force F acts on the skyrmion 40 from the current path 12, but due to the Magnus force, the skyrmion 40 moves perpendicular to the pulling force F. In this way, the skyrmion 40 moves along the right side of the end region for erasing A2.
  • Fig. 35 shows the relationship between time and the magnetic fields Ha of the end regions when performing generation and erasing of the skyrmion 40.
  • the pulse Ha1 to generate a skyrmion and the pulse Ha2 to erase a skyrmion in the present example have the same orientation but different magnitudes.
  • the end region for generation A1 has a magnetic field Ha of 0.01J due to the pulse Ha1 to generate a skyrmion.
  • the end region for erasing A2 has a magnetic field Ha of 0.15J due to the pulse Ha2 to erase a skyrmion. In other words, erasing is possible if the magnetic field Ha of the end region for erasing A2 is such that Ha ⁇ 0.02J.
  • the pulse Ha2 to erase a skyrmion is applied to the end region for erasing A2 and a pulling force F acts on the skyrmion 40 from the current path 12, but due to the Magnus force, the skyrmion 40 moves perpendicular to the pulling force F. In this way, the skyrmion 40 moves along the right side of the end region for erasing A2.
  • a skyrmion 40 when a skyrmion 40 is not generated by the pulse Ha1 to generate a skyrmion, a skyrmion 40 is not generated later by the pulse Ha2 to erase a skyrmion. This is because, since the height of the end region for erasing A2 is small, the skyrmion 40 cannot be generated.
  • the current path 12 may include two different current paths 12 that define the end region for generation A1 and the end region for erasing A2.
  • the end region for erasing A2 is provided inside the end region for generation A1. It should be noted that if the end region for erasing A2 is at a position enabling erasing of the generated skyrmion 40, the position is not limited to the inside of the end region for generation A1.
  • the coil region A C for erasing that does not include the end portion of the magnet 11 erases the skyrmion 40.
  • the standards of these 17 items determine the basic rules for designing a skyrmion memory element, and are extremely important.
  • the design rules described above are expressed as amounts defined by two quantities, which are the magnetic exchange interaction J characterizing the magnetism of the magnet 11 and the size ⁇ of the generated skyrmions.
  • Expression 5 relates the diameter ⁇ of a skyrmion 40 to the Dzyaloshinskii-Moriya interaction D. Accordingly, these basic rules represent design rules capable of being applied to various chiral magnets, and the applicable range is broad.
  • Figs. 39A to 39F show exemplary shapes of the current path 12.
  • Fig. 39A is the same as the example shown in Figs. 3 and the like.
  • the current path 12 may surround an end region with a triangular shape.
  • the current path 12 may surround an end region that is a portion of an ellipse, a circle, or an oval.
  • the current path 12 may surround an end region that has a parallelogram shape.
  • the current path 12 may surround an end region that has a trapezoidal shape.
  • the current path 12 may surround an end region whose shape is a combination of a circle, a square, a triangle, or other shapes.
  • Fig. 40 shows a case where the current path 12 is a multilayer wrapped coil.
  • the current path 12 shaped as a multilayer wrapped coil is an effective method for increasing the magnetic field strength induced by the coil current.
  • the shape of the current path 12 in the present invention is not limited to these shapes, and other similar shapes can be adopted for the current path 12.
  • the conclusions reached in the embodiment examples of a chiral magnet described above do not qualitatively change when applied to dipole type magnets, frustrated magnets, or magnets with layered structures.
  • a skyrmion 40 is a super-fine structure with a nanoscale size and a diameter from 1 nm to 500 nm, and can be used as a high-capacity storage magnetic element that can miniaturize a huge amount of bit information.
  • the skyrmion memory 100 can electrically perform writing and erasing.
  • the time needed for the writing and the time needed for the erasing are each 3000(1/J). This required time is determined according to the magnitude of J, which is specific to the magnetic material. This magnitude is several meV in the case of a chiral magnet. In this case, 3000(1/J) corresponds to approximately 1 nanosecond.
  • the skyrmion memory 100 also has many advantageous points over a flash memory that uses electricity for writing and erasing.
  • a flash memory has a generation time of several milliseconds and a long erasing time of 20 microseconds.
  • the skyrmion memory 100 has a generation time and an erasing time that are each 1 nanosecond, which is at least from 6 to 3 orders of magnitude faster than a flash memory. This speed is amazing for a DRAM memory that requires approximately 10 nanoseconds as the generation time and erasing time of charge, and is a speed that is on par with an SRAM. Since the skyrmion memory 100 is a nonvolatile memory, the skyrmion memory 100 truly has the functions of the ultimate memory.
  • the skyrmion memory 100 is capable of performing writing and reading as many times as desired. In other words, there is no limit on the number of times writing and erasing are performed, and the endurance (durability) is infinite. Furthermore, the skyrmion 40 is generated as a magnetic moment having the same spiral structure not just on the front surface of the magnet 11 but also to the back surface. Therefore, a skyrmion 40 can exist stably as a structure that is not easily destroyed (erased) and remain static at a position without moving. In environments with a weak magnetic field such as found in daily life, the skyrmions 40 move easily and are not erased. In this way, since the skyrmions 40 exist stably, the skyrmion memory 100 can significantly improve the data retention (holding) performance.
  • Fig. 41 shows an exemplary embodiment of the skyrmion memory 100.
  • the skyrmion memory 100 in the present example has the same configuration as the skyrmion memory 100 according to the embodiment of Fig. 3 , except for the skyrmion sensor 15.
  • the skyrmion sensor 15 in the present example includes a first electrode 153 and a second electrode 154 formed of a nonmagnetic metal.
  • the first electrode 153 and the second electrode 154 may each be nonmagnetic metal made of the same material, or may be nonmagnetic metals made of different materials.
  • the first electrode 153 contacts the magnet 11 in the same layer at one end of the magnet 11.
  • the one end of the magnet 11 may be any one of the top, bottom, left, or right end portion of the magnet 11, as long as it is an end portion.
  • the first electrode 153 only needs to contact at least a portion of the one end of the magnet 11.
  • the second electrode 154 contacts the magnet 11 in the same layer at another end of the magnet 11.
  • the other end of the magnet 11 may be any one of the top, bottom, left, or right end portion of the magnet 11, as long as it is an end portion.
  • the first electrode 153 and the second electrode 154 may be arranged at arbitrary end portions regardless of the position where the end region A is formed.
  • the first electrode 153 and the second electrode 154 are arranged at opposite end portions in a manner to sandwich the magnet 11.
  • Contacting the magnet 11 in the same layer refers to the first electrode 153 and the second electrode 154 contacting the magnet 11 in a direction perpendicular to the magnetic field H.
  • the first electrode 153 and the second electrode 154 are layered on the top portion of the magnet 11 without being formed in contact with the magnet 11 in the same layer, there is a possibility that the generated skyrmions will tunnel into the bottom portions of the first electrode 153 or the second electrode 154.
  • problems occur such as the inability to erase the skyrmions that have tunneled.
  • the first electrode 153 or the second electrode 154 must be formed in contact with an end portion of the magnet 11. Forming the first electrode 153 or the second electrode 154 in contact with an end portion of the magnet 11 results in forming the first electrode 153 or the second electrode 154 in the same plane, and this enables a reduction in the manufacturing cost.
  • the unit for measuring 30 is connected to the first electrode 153 and the second electrode 154.
  • the unit for measuring 30 measures the resistance value of the magnet 11 between the first electrode 153 and the second electrode 154.
  • the resistance value between the first electrode 153 and the second electrode 154 corresponds to the resistance value of the magnet 11, and changes according to the generation and erasing of the skyrmions 40.
  • the magnet 11 is ferromagnetic, and therefore the magnetic moments are aligned in the +z direction.
  • the polarization of the spin of electrons flowing between the first electrode 153 and the second electrode 154 is in the +z direction, in the same manner as the magnet 11, and therefore does not experience spin scattering.
  • the resistance value for the flow between the first electrode 153 and the second electrode 154 is low.
  • the spiral magnetic moments of the skyrmions are present in the magnet 11, and magnetic moments with many orientations other than in the z direction are present among these magnetic moments.
  • the polarization of the spin of electrons flowing between the first electrode 153 and the second electrode 154 experiences spin scattering.
  • the resistance value for the flow between the first electrode 153 and the second electrode 154 is high.
  • the resistance value of the magnet 11 is higher when there are skyrmions 40 present than when the skyrmions 40 are not present.
  • the unit for measuring 30 can detect the generation and erasing of a skyrmion 40 by measuring the change in the resistance value of the magnet 11.
  • Fig. 42 shows an exemplary embodiment of the skyrmion memory 100.
  • the skyrmion memory 100 in the present example detects the presence or lack of skyrmions 40 by detecting a Hall voltage.
  • the skyrmion memory 100 in the present example has the same configuration as the skyrmion memory 100 according to the embodiment shown in Fig. 41 , except for the skyrmion sensor 15.
  • the skyrmion sensor 15 further includes a third electrode 155 and a fourth electrode 156 formed by nonmagnetic metal.
  • the third electrode 155 and the fourth electrode 156 may each be nonmagnetic metal made of the same material, or may be nonmagnetic metals made of different materials.
  • the third electrode 155 is arranged to be perpendicular to the arrangement formed by the first electrode 153 and the second electrode 154, and is made from a third nonmagnetic metal that contacts an end portion of the magnet 11.
  • the third electrode 155 contacts the magnet 11 in the same layer at the one end of the magnet 11.
  • the third electrode 155 only needs to contact at least a portion of the one end of the magnet 11. For example, in a case where the first electrode 153 and the second electrode 154 are arranged on the left and right of the magnet 11, the third electrode 155 is arranged on the bottom side of the magnet 11.
  • the fourth electrode 156 is made from a fourth nonmagnetic metal that is distanced from the third electrode 155, faces the third electrode 155, and contacts an end portion of the magnet 11.
  • the fourth electrode 156 contacts the magnet 11 in the same layer at one end of the magnet 11.
  • the fourth electrode 156 only needs to contact at least a portion of the one end of the magnet 11. For example, in a case where the first electrode 153 and the second electrode 154 are arranged on the left and right of the magnet 11, the fourth electrode 156 is arranged on the top side of the magnet 11.
  • the third electrode 155 and the fourth electrode 156 are arranged in a manner to measure the voltage value in a direction perpendicular to the current flowing through the magnet 11 due to the first electrode 153 and the second electrode 154. If the third electrode 155 and the fourth electrode 156 are formed using the same process as for the first electrode 153 and the second electrode 154, it is possible to reduce the manufacturing cost.
  • the unit for measuring 30 further includes a voltmeter 33 that is connected to the third electrode 155 and the fourth electrode 156. If a skyrmion 40 is present, when current flows between the first electrode 153 and the second electrode 154, the Hall voltage is generated in a direction perpendicular to the flow of the current. On the other hand, when a skyrmion 40 is not present, the Hall voltage is a minimum value. In other words, the unit for measuring 30 directly reads a "1" or "0" signal by detecting the presence or lack of a skyrmion 40 as a difference in the Hall voltage.
  • the detection method of a skyrmion 40 according to the present embodiment has high sensitivity, since one of the Hall voltages used in the comparison is small.
  • One of the third electrode 155 and the fourth electrode 156 may also function as the first electrode 153 or the second electrode 154. It is only necessary that one of the wires among the two wires connected to the voltmeter 33 be connected to the first electrode 153 or the second electrode 154. If the difference between the voltage values obtained by the voltmeter are detected, it is possible to detect a skyrmion 40. In this case, the sensitivity is reduced but, because the electrode area is also reduced, it is possible to improve the degree of integration.
  • Fig. 43 shows a cross-sectional structure of a skyrmion memory-device 110.
  • the skyrmion memory-device 110 is a device including at least the skyrmion memory 100.
  • the skyrmion memory-device 110 includes a generating unit 20 of the magnetic fields that is a ferromagnetic layer and a magnetic element 10 formed above the generating unit 20 of the magnetic fields.
  • a nonmagnetic layer is provided between the magnetic element 10 and the generating unit 20 of the magnetic fields.
  • the magnetic element 10 in the present example includes the first electrode 153 and the second electrode 154 corresponding to the magnetic element 10 shown in Fig. 41 . Instead, the magnetic element 10 in the present example corresponds to the magnetic element 10 shown in Fig.
  • the magnetic element 10 includes a layered structure in which an insulation layer 60, a protective layer 65 for the magnet, a first layer for wiring 70, and a second layer for wiring 75 are layered in the stated order.
  • the insulation layer 60 includes the magnet 11, an insulator 61, the first electrode 153, and the second electrode 154. Skyrmions 40 are generated and erased in the magnet 11.
  • the insulator 61 surrounds the magnet 11, the first electrode 153, and the second electrode 154.
  • the first electrode 153 and the second electrode 154 are formed by a nonmagnetic metal.
  • the magnet 11, the first electrode 153, and the second electrode 154 have a structure in which nonmagnetic metal, magnetic material, and nonmagnetic metal are joined, and this is the basic structure of a skyrmion magnetic medium. This structure is abbreviated as an NMN structure.
  • the magnetic layer 60 may include a plurality of NMN structures in the same layer.
  • the protective layer 65 for the magnet includes a protective film 66 for the magnet and a first via 67.
  • the protective film 66 for the magnet protects the magnetic layer 60.
  • the first via 67 supplies a current for skyrmion detection to the first electrode 153 and the second electrode 154.
  • the first layer for wiring 70 includes a first wiring 71, a protective film 72 for the first wiring, and a second via 73.
  • the first wiring 71 forms the current paths for magnetic field generation and for skyrmion detection.
  • the protective film 72 for the first wiring functions as an interlayer insulating film for forming the first wiring 71 and the second via 73. It is difficult to lead the two types of current paths, which are for magnetic field generation and for skyrmion detection, in the same layer without having these wires intersect. Therefore, the second layer for wiring 75 may be formed on the first layer for wiring 70.
  • the second layer for wiring 75 includes a second wiring 76 and a protective film 77 for the second wiring.
  • the second wiring 76 is connected to the second via 73.
  • the protective film 77 for the second wiring functions as an interlayer insulating film for insulating the second wiring 76.
  • the second via 73 is connected to at least one of the two types of current paths, which are for magnetic field generation and for skyrmion detection, in the same layer without having these wires intersect.
  • the skyrmion 40 is shown in the drawing by a black circle.
  • the magnetic field generated from the current path by the first wiring 71 is shown in the drawing by a downward-oriented arrow.
  • a skyrmion 40 can be generated in the magnet 11 due to the magnetic field generated by the coil current path due to the first wiring 71.
  • Fig. 44 shows an example of a cross-sectional structure of the skyrmion memory-device 110.
  • the skyrmion memory-device 110 includes the skyrmion memory 100 and a FET (Field Effect Transistor) 99.
  • the skyrmion memory 100 is formed on a silicon substrate in which the FET 99 is not present.
  • the FET 99 is a general FET that is formed through a general silicon process.
  • the FET 99 in the present example includes two Cu wiring layers.
  • Figs. 45A to 45H show a manufacturing process of the skyrmion memory-device 110 shown in Fig. 43 .
  • the manufacturing process of the FET 99 is not shown.
  • Fig. 45A shows the formation process of the generating unit 20 of the magnetic fields and the nonmagnetic metal 157.
  • the generating unit 20 of the magnetic fields is formed on the substrate 80 that is formed of silicon.
  • the generating unit 20 of the magnetic fields forms a ferromagnetic film, and generates a uniform perpendicular magnetic field from the substrate 80 side to the insulation layer 60 side.
  • the generating unit 20 of the magnetic fields is formed with a thickness of 3000 ⁇ by a stopper device.
  • the generating unit 20 of the magnetic fields is formed by a rare earth metal magnet or a ferrite magnet made from iron oxide.
  • An insulating film made of a silicon oxide film or the like may be present between the generating unit 20 of the magnetic fields and the substrate 80.
  • a resist 85 is patterned on the generating unit 20 of the magnetic fields to have the shape of the magnet 11.
  • the resist 85 is formed with a thickness of several thousand Angstroms using spin coating.
  • the resist 85 undergoes EUV exposure in the region where the magnet 11 is formed. The regions outside the region where the EUV exposure was performed are removed due to development.
  • the material of the resist 85 may be a general material used in the manufacturing process of semiconductors.
  • the nonmagnetic metal 157 is formed on the generating unit 20 of the magnetic fields and the resist 85.
  • the nonmagnetic metal 157 becomes the first electrode 153 and the second electrode 154 of the skyrmion sensor 15 by performing patterning later.
  • the nonmagnetic metal 157 is formed with a thickness of 500 ⁇ by a sputtering device.
  • the nonmagnetic metal 157 is formed with a nonmagnetic metal such as copper Cu or aluminum Al.
  • Fig. 45B shows the step of peeling off the resist 85.
  • the resist 85 is removed using a dry process or a wet process.
  • the resist 85 is peeled off using oxygen gas ashing.
  • a recessed portion of the nonmagnetic metal 157 is formed at a position where the magnet 11 is to be formed.
  • the nonmagnetic metal 157 in the present example is formed by a lithography process, but may instead be formed by an etching process.
  • Fig. 45C shows the process for forming the magnet 11.
  • the magnet 11 is formed with a thickness of 500 ⁇ by an MBE device.
  • the magnet 11 is formed in the recessed portion of the nonmagnetic metal 157 and on the entire surface of the insulation layer 60.
  • the magnet 11 in the present example has the same film thickness as the nonmagnetic metal 157.
  • the film thickness of the magnet 11 deposited in the present process may be greater than the film thickness of the nonmagnetic metal 157 or may be less than the film thickness of the nonmagnetic metal 157.
  • Fig. 45D shows a process of removing the magnet 11 and a process of applying the resist 85.
  • the magnet 11 formed on the top portion of the nonmagnetic metal 157 is removed using a CMP (Chemical Mechanical Process).
  • the resist 85 is applied to form the first electrode 153 and the second electrode 154.
  • the resist 85 is patterned according to the shapes of the magnet 11, the first electrode 153, and the second electrode 154, through a process of EUV exposure and development.
  • the third electrode 155 and the fourth electrode 156 may be patterned at the same time as the first electrode 153 and the second electrode 154. In this way, the skyrmion memory 100 including the third electrode 155 and the fourth electrode 156 shown in Fig. 42 can be formed without adding a new process.
  • Fig. 45E shows a process of etching the electrodes and a process of forming the insulator 61.
  • the first electrode 153 and the second electrode 154 are formed using dry etching.
  • the NMN structure which is the basic structure of the skyrmion memory 100, is completed.
  • the following processes are the same as the wiring processes of a normal LSI.
  • the insulation layer 60 the insulator 61 is formed around the NMN structure.
  • Fig. 45F shows a process of forming the protective layer 65 for the magnet and the first wiring 71.
  • a protective film 66 for the magnet is formed on the insulation layer 60.
  • the first via 67 is formed by depositing metal for wiring in the opening formed in the protective film 66 for the magnet.
  • the protective film 66 for the magnet and the first via 67 are formed by the same process as the process of general semiconductor manufacturing.
  • the first wiring 71 is formed on the protective layer 65 for the magnet.
  • the first wiring 71 is used as the current path for generating the magnetic fields for skyrmion generation and erasing and as the current path for skyrmion sensing.
  • the first wiring 71 is patterned using a general lithography process and etching process.
  • the first wiring 71 may be formed by a method that is either an etching process or a lift-off process.
  • Fig. 45G shows the process of forming the first layer for wiring 70 and the second layer for wiring 75.
  • a protective film 72 for the first wiring is formed on the protective layer 65 for the magnet and the first wiring 71.
  • the second via 73 is formed by depositing metal for wiring in the opening formed in the protective film 72 for the first wiring.
  • the second wiring 76 is formed on the first layer for wiring 70.
  • the second wiring 76 is patterned using a general lithography process and etching process.
  • the second wiring 76 may be formed by a method that is either an etching process or a lift-off process.
  • a protective film 77 for the second wiring is formed on the first layer for wiring 70 and the second wiring 76.
  • the second wiring 76 and the protective film 77 for the second wiring are formed by the same process as the process of general semiconductor manufacturing.
  • the above shows a manufacturing process for forming the magnetic element 10 on the generating unit 20 of the magnetic fields that generates the magnetic field.
  • the total number of photomasks needed to manufacture the skyrmion memory-device 110 is seven.
  • one photomask is used for the generating unit 20 of the magnetic fields.
  • Two photomasks are used for the NMN structure (the magnet 11, the first electrode 153, and the second electrode 154), one photomask is used to form the first via 67, one photomask is used to form the first wiring 71, one photomask is used to form the second via 73, and one photomask is used to form the second wiring 76.
  • the magnetic element can be manufactured using 1/3 or less of the number of photo processes used for a normal CMOS with two layers of wiring. Furthermore, the present manufacturing process uses existing LSI manufacturing processes, and therefore the cost of developing a process and the cost of manufacturing are low.
  • a CMOS-FET structure for sensor amplification and switches for controlling the skyrmion memory 100 must be mounted on the same chip.
  • the photo processes used in the CMOS-FET manufacturing process can also serve as the photo processes for manufacturing the skyrmion memory, and therefore the number of photomasks is only increased by one, which is the photomask used for the generating unit of the magnetic field. The increase of the manufacturing cost can be significantly reduced.
  • Fig. 45H shows a skyrmion memory-device 110 on which magnetic elements 10 are layered.
  • the skyrmion memory-device 110 in the present example includes a magnetic element 10-1 and a magnetic element 10-2.
  • the skyrmion memory-device 110 is manufactured by repeating the manufacturing process shown in Figs. 45A to 45G .
  • the skyrmion memory-device 110 can achieve a greater degree of integration by layering the magnetic elements 10.
  • the skyrmion memory-device 110 in the present example can realize twice the degree of integration of the skyrmion memory-device 110 shown in Fig. 45G .
  • Fig. 46 shows a skyrmion memory-device 110 on which n layers of the magnetic element 10 are layered.
  • the generating unit 20 of the magnetic fields has a film thickness of 3000 ⁇ .
  • the magnetic elements 10 have a structure in which a magnetic element 10-1 to a magnetic element 10-n are layered.
  • the magnetic elements 10 in the present example have a total film thickness of 35000 ⁇ .
  • Fig. 47 shows a skyrmion memory-device 110 including a plurality of generating units 20 of the magnetic fields.
  • the skyrmion memory-device 110 in the present example includes a total of eight layers of magnetic elements 10, from a magnetic element 10-1 to a magnetic element 10-8.
  • the skyrmion memory-device 110 includes four layers of magnetic elements 10 formed on a generating unit 20 of the magnetic fields-1.
  • the skyrmion memory-device 110 further includes a generating unit 20 of the magnetic fields-2 between the magnetic element 10-4 and the magnetic element 10-5. In this way, the magnetic element 10 can keep the magnetic field strength received from the generating units 20 of the magnetic fields constant.
  • the generating units 20 of the magnetic fields may be arranged at suitable intervals according to the material and the like of the magnetic elements 10.
  • Fig. 48 shows an exemplary configuration of the skyrmion memory-device 110.
  • the skyrmion memory-device 110 includes the skyrmion memory 100 and a CMOS-FET 90 establishing a CPU function.
  • the skyrmion memory 100 is formed on the CMOS-FET 90.
  • the CMOS-FET 90 in the present example includes a PMOS-FET 91 and an NMOS-FET 92.
  • the skyrmion memory 100 can include the CMOS-FET 90 establishing a CPU function and a skyrmion memory-device 110 that is a layered large-scale nonvolatile memory, in the same chip.
  • the CPU processing time can be shortened, the processing speed can be increased, and the power consumption of the CPU can be significantly reduced.
  • the skyrmion memory 100 that is a large-scale nonvolatile memory has zero power consumption for memory holding.
  • the orientation of the magnetic moment of the skyrmion does not require any power supply from the outside to have topological stability.
  • a DRAM memory requires a data refresh, and an SRAM requires constant power input since an SRAM is volatile.
  • a flash memory has a long data access time, and therefore cannot directly exchange data with the CPU.
  • Fig. 49 shows the design size of a skyrmion memory 100 when the smallest machining dimension for LSI, which is the currently reached mass production technology, is 15 nm.
  • Fig. 49 shows the size of the magnet 11 and the current path 12 as seen from the front surface. Since the smallest machining dimension for LSI is 15 nm, the line width of the current path 12 is 15 nm. The width of the end region A can be machined to 15 nm, but is given a margin to be 20 nm. As a result, the height of the end region A is 30 nm. The width Wm of the magnet 11 is 50 nm. The height hm of the magnet is the same as Wm.
  • the diameter ⁇ of the skyrmion 40 in a case where such a magnet size is selected is determined by the design rules shown below. With Wm being the width and hm being the height, the magnet size, with the skyrmion of a diameter ⁇ being generated, is as shown below. 2 ⁇ > Wm > ⁇ /2 2 ⁇ > hm > ⁇ /2
  • the diameter of the skyrmion can be selected in a range of 100 nm > ⁇ > 25 nm.
  • the skyrmion diameter ⁇ is 70 nm for FeGe and 18 nm for MnSi, for example. Accordingly, in a case where the smallest machining dimension for LSI, which is the currently reached mass production technology, is 15 nm, it is only necessary to select FeGe with a skyrmion diameter of 70 nm.
  • Fig. 50 shows an exemplary write circuit of the skyrmion memory-device 110.
  • Writing data to the skyrmion memory 100 refers to generating skyrmions 40 in the skyrmion memory 100.
  • the skyrmion sensor 15 in the present example corresponds to the example of Fig. 3 , and includes TMR elements.
  • the circuit configuration of the skyrmion memory-device 110 is basically the same in a case where the configuration shown in Fig. 41 or Fig. 42 is used as the skyrmion sensor 15.
  • a plurality of the skyrmion memories 100 are connected to an electric line 95 to generate a skyrmion and an electric line 96 to erase a skyrmion.
  • each electric line 95 to generate a skyrmion(n) is connected to the skyrmion memory 100 of an n-th row and each electric line 96 to erase a skyrmion (n) is connected to the skyrmion memory 100 of an n-th column.
  • Each line connected to a skyrmion memory 100 has a FET connected thereto. The FETs act as electrical switches to select each skyrmion memory 100 individually, by having a voltage applied to the gates thereof.
  • the FETs connected to the electric line 95 to generate a skyrmion(n) and the electric line 96 to erase a skyrmion(n) are turned ON. After this, when current flows from the electric line 95 to generate a skyrmion(n) toward the electric line 96 to erase a skyrmion(n), the skyrmion 40 is generated in the skyrmion memory 100(n, n).
  • the FETs connected to the electric line 95 to generate a skyrmion(n-1) and the electric line 96 to erase a skyrmion(n+1) are turned ON.
  • the skyrmion 40 is generated in the skyrmion memory 100(n-1, n+1).
  • Fig. 51 shows an exemplary erasing circuit of a skyrmion memory-device 110.
  • Erasing data in a skyrmion memory 100 refers to erasing skyrmions 40 in the skyrmion memory 100.
  • the electric lines 95 to generate skyrmions and the electric lines 96 to erase skyrmions are connected to the skyrmion memories 100 with the same wiring as in the example of Fig. 50 .
  • a skyrmion memory 100 is selected by switching the FETs. By causing current to flow from an electric line 96 to erase a skyrmion toward an electric line 95 to generate a skyrmion, a skyrmion 40 is erased.
  • the FETs connected to the electric line 95 to generate a skyrmion(n) and the electric line 96 to erase a skyrmion(n) are turned ON.
  • the skyrmion 40 of the skyrmion memory 100(n, n) is erased.
  • the FETs connected to the electric line 95 to generate a skyrmion(n-1) and the electric line 96 to erase a skyrmion(n+1) are turned ON.
  • the skyrmion 40 of the skyrmion memory 100(n-1, n+1) is erased.
  • Fig. 52 shows an exemplary read circuit of a skyrmion memory-device 110.
  • Reading data of a skyrmion memory 100 refers to detecting a skyrmion 40 of the skyrmion memory 100.
  • word lines 97 are used in addition to the electric lines 95 to generate skyrmions and the electric lines 96 to erase skyrmions.
  • the electric lines 96 to erase skyrmions are connected to the skyrmion sensor 15.
  • the electric lines 96 to erase skyrmions cause current for detecting skyrmions to flow through the skyrmion sensor 15.
  • the word lines 97 are connected to an end portion of the magnet 11.
  • the word lines 97 are connected to the electric lines 96 to erase skyrmions via the skyrmion sensor 15 and the magnet 11.
  • the skyrmions 40 are detected by causing current to flow from the electric lines 96 to erase skyrmions to the word lines 97.
  • the word lines 97 are connected to the plurality of skyrmion memories 100. For example, each word line 97(n) is connected to the skyrmion memory 100 in the n-th row.
  • the word lines 97 are connected to detection circuits 98. By switching the FETs connected to the electric lines 96 to erase skyrmions and the word lines 97, the skyrmion memories 100 are selected. When detecting the skyrmions 40, the FETs connected to the electric line 95 to generate a skyrmion are turned OFF.
  • the detection circuits 98 amplify the voltage or current flowing through the word lines 97, and detect the presence or lack of skyrmions 40.
  • Each detection circuit 98 includes an input resistor Rin, a feedback resistor Rf, an amplification circuit C1, and a voltage comparison circuit C2.
  • the current input to the detection circuit 98 from the word line 97 is input to the amplification circuit C1 via the input resistor Rin.
  • the feedback resistor Rf is provided in parallel with the amplification circuit C1.
  • the amplification circuit C1 converts the current from the word line 97 into voltage and amplifies this voltage.
  • the output voltage of the amplification circuit C1 and a reference voltage Vref are input to the voltage comparison circuit C2.
  • the voltage comparison circuit C2 outputs "1" if the output voltage of the amplification circuit C1 is greater than the reference voltage Vref. On the other hand, the voltage comparison circuit C2 outputs "0" if the output voltage of the amplification circuit C1 is less than the reference voltage Vref.
  • the FETs connected to the electric line 96 to erase a skyrmion(n) and the word line 97(n) are turned ON. After this, when current flows to the electric line 96 to erase a skyrmion(n), the voltage value is changed due to the resistance corresponding to the presence or lack of a skyrmion 40.
  • the FETs connected to the electric line 96 to erase a skyrmion(n+1) and the word line 97(n-1) are turned ON.
  • a current for detection flows in the skyrmion memory 100(n-1, n+1).
  • This current is detected in the detection circuit 98 connected to the word line 97(n-1). In this way, it is possible to obtain data of "1" or "0" according to the presence of a skyrmion 40.
  • the skyrmion memory 100 can read data according to the presence or lack of skyrmions 40.
  • the skyrmion memory-device 110 can select an arbitrary skyrmion memory 100 and generate, erase, and read a skyrmion 40.
  • the FETs arranged around the skyrmion memories 100 and the amplification circuits C1 and voltage comparison circuits C2 of the detection circuits 98 are formed by CMOS devices.
  • the plurality of skyrmion memories 100 are arranged in a planar shape. Furthermore, skyrmion memories 100 arranged in a planar shape may be layered.
  • the plurality of skyrmion memories 100 can be layered using a manufacturing process with a small number of photomasks, as shown in Figs. 45A to 45H .
  • the skyrmion memories 100 can significantly increase the degree of integration by enabling layering.
  • Fig. 53 is a schematic view of an exemplary configuration of a skyrmion-memory embedded solid-state electronic device 200.
  • the skyrmion-memory embedded solid-state electronic device 200 includes the skyrmion memory-device 110 and a solid-state electronic device 210.
  • the skyrmion memory-device 110 is the skyrmion memory-device 110 described in Figs. 43 to 48 .
  • the solid-state electronic device 210 is a CMOS-LSI device, for example.
  • the solid-state electronic device 210 has a function of at least one of writing data to the skyrmion memory-device 110 and reading data from the skyrmion memory-device 110.
  • Fig. 54 is a schematic view of an exemplary configuration of a data-storage device 300.
  • the data-storage device 300 includes the skyrmion memory-device 110 and a unit for input/output 310.
  • the data-storage device 300 is a memory device such as a hard disk or a USB memory, for example.
  • the skyrmion memory-device 110 is the skyrmion memory-device 110 described in Figs. 43 to 48 .
  • the unit for input/output 310 has a function of at least one of writing data from the outside to the skyrmion memory-device 110 and outputting data to the outside by reading the data from the skyrmion memory-device 110.
  • Fig. 55 is a schematic view of an exemplary configuration of a data processing device 400.
  • the data processing device 400 includes the skyrmion memory-device 110 and a processor 410.
  • the skyrmion memory-device 110 is the skyrmion memory-device 110 described in Figs. 43 to 48 .
  • the processor 410 includes a digital circuit that processes a digital signal, for example.
  • the processor 410 has a function of at least one of writing data to the skyrmion memory-device 110 and reading the data from the skyrmion memory-device 110.
  • Fig. 56 is a schematic view of an exemplary configuration of a communication device 500.
  • the communication device 500 refers to a general device that has a function for communication with the outside, such as a mobile telephone, a smartphone, or a tablet terminal, for example.
  • the communication device 500 may be portable, or may be non-portable.
  • the communication device 500 includes the skyrmion memory-device 110 and a communicating unit 510.
  • the skyrmion memory-device 110 is the skyrmion memory-device 110 described in Figs. 43 to 48 .
  • the communicating unit 510 has a function for communication with the outside of the communication device 500.
  • the communicating unit 510 may have a wireless communication function, a wired communication function, or a function for both wireless and wired communication.
  • the communicating unit 510 has at least one of a function for writing data received from the outside to the skyrmion memory-device 110, a function for transmitting data read from the skyrmion memory-device 110 to the outside, and a function for operating based on control information stored by the skyrmion memory-device 110.
  • a magnetic element capable to generating, erasing, and detecting skyrmions 40 at high speed and with low power consumption, as well as a nonvolatile skyrmion memory 100, a skyrmion-memory embedded solid-state electronic device 200, a data-storage device 300, a data processing device 400, and a communication device that adopt this magnetic element.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Claims (14)

  1. Un élément magnétique (10) capable de générer et d'effacer un skyrmion (40), comprenant :
    un aimant (11) formé comme une couche mince et comprenant une structure entourée par un matériau non magnétique ;
    un chemin de courant (12) entourant au moins partiellement une région d'extrémité comprenant une partie d'extrémité de l'aimant (11), le chemin de courant (12) étant prévu sur une surface de l'aimant (11) ; et
    un capteur de skyrmion (15) configuré pour détecter la génération et l'effacement du skyrmion (40), dans lequel,
    avec Wm étant une largeur de l'aimant (11) et hm étant une hauteur de l'aimant (11), une taille de l'aimant (11), avec le skyrmion (40) d'un diamètre λ étant généré, est telle que 2λ > Wm > λ/2 et 2λ > hm > λ/2, dans lequel l'aimant (11) présente au moins une phase cristalline de skyrmion générant le skyrmion (40) et une phase ferromagnétique, selon un champ magnétique qui lui est appliqué, dans lequel l'élément magnétique (10) est agencé pour faire interface avec une unité de génération de champ magnétique (20) faisant face à la surface de l'aimant (11) et configurée pour appliquer un premier champ magnétique à l'aimant (11) depuis une première direction ; et une première alimentation électrique configurée pour générer un second champ magnétique dans ladite région d'extrémité en appliquant un courant audit chemin de courant prévu.
  2. L'élément magnétique (10) selon la revendication 1, dans lequel
    avec W étant une largeur de la région d'extrémité dans une direction parallèle à la partie d'extrémité de l'aimant (11) et h étant une hauteur de la région d'extrémité dans une direction perpendiculaire à la partie d'extrémité de l'aimant (11), la région d'extrémité est telle que λ ≥ W > λ/4 et 2λ > h > λ/2.
  3. L'élément magnétique (10) selon l'une quelconque des revendications 1 ou 2, dans lequel.
    W étant la largeur de la région d'extrémité dans la direction parallèle à la partie d'extrémité de l'aimant, h étant la hauteur de la région d'extrémité dans la direction perpendiculaire à la partie d'extrémité de l'aimant (11), et d étant une largeur minimale d'un espace dans la direction parallèle à la partie d'extrémité de l'aimant (11) entre le chemin de courant (12) et une autre partie d'extrémité de l'aimant (11), la région d'extrémité est telle que λ ≥ W > λ/4 et 2λ > h > λ/2, et d est telle que 0,4λ > d ≥ 0,2λ.
  4. L'élément magnétique (10) selon l'une quelconque des revendications 1 à 3 capable de générer et d'effacer le skyrmion (40), comprenant :
    l'aimant (11) façonné sous la forme d'une couche mince et comprenant la structure entourée par le matériau non magnétique ;
    un premier chemin de courant (12) prévu pour entourer au moins partiellement une première région d'extrémité comprenant la partie d'extrémité de l'aimant (11), le chemin de courant (12) étant prévu sur une surface de l'aimant (11) ;
    un deuxième chemin de courant prévu pour entourer au moins partiellement une deuxième région d'extrémité qui est à l'intérieur de la première région d'extrémité et comprenant la partie d'extrémité de l'aimant (11), le chemin de courant étant prévu sur une surface de l'aimant (11) ; et
    un capteur de skyrmion (15) qui détecte la génération et l'effacement du skyrmion (40), dans lequel
    avec Wm étant une largeur de l'aimant (11) et hm étant une hauteur de l'aimant (11), une taille de l'aimant, avec le skyrmion (40) d'un diamètre λ étant généré, est telle que 2λ > Wm > λ/2 et 2λ > hm > λ/2,
    avec W1 étant une largeur de la première région d'extrémité dans une direction parallèle à la partie d'extrémité de l'aimant (11) et h1 étant une hauteur de la première région d'extrémité dans une direction perpendiculaire à la partie d'extrémité de l'aimant (11), la première région d'extrémité est telle que λ ≥ W1 > λ/4 et 2λ > h1 > λ/26, et
    avec W2 étant une largeur de la deuxième région d'extrémité dans une direction parallèle à la partie d'extrémité de l'aimant (11) et h2 étant une hauteur de la deuxième région d'extrémité dans une direction perpendiculaire à la partie d'extrémité de l'aimant (11), la deuxième région d'extrémité est telle que W2 = W1 et h2 = W1.
  5. L'élément magnétique (10) selon l'une quelconque des revendications 1 à 4, dans lequel
    l'élément magnétique (10) a une structure multicouche stratifiée dans le sens de l'épaisseur, ou l'aimant (11) est fait à partir d'un aimant chiral, d'un aimant dipôle, d'un aimant frustré, et d'une structure stratifiée d'un matériau magnétique et d'un matériau non magnétique.
  6. L'élément magnétique (10) selon l'une quelconque des revendications 1 à 5, dans lequel
    le capteur skyrmion comprend, sur une surface de l'aimant, une structure en couches d'une couche mince isolante non magnétique en contact avec une surface avant de l'aimant et un film métallique magnétique prévu sur la couche mince isolante non magnétique, et
    la structure en couches ayant une valeur de résistance qui change en fonction de la présence ou de l'absence du skyrmion.
  7. Une mémoire à skyrmion (100) comprenant :
    l'élément magnétique (10) selon l'une quelconque des revendications 1 à 6 ;
    une unité de génération de champ magnétique (20) étant prévue face à la surface de l'aimant (11) et appliquant un premier champ magnétique à l'aimant (11) depuis une première direction ; et une unité de mesure (30) étant connectée au capteur de skyrmion (15) et détectant une présence ou une absence du skyrmion (40) sur la base d'un résultat de détection du capteur de skyrmion (15).
  8. La mémoire à skyrmion (100) selon la revendication 7, dans laquelle
    le chemin de courant (12) est capable d'avoir une impulsion de courant pour générer un skyrmion (40) pour générer le skyrmion (40) et une impulsion de courant pour effacer un skyrmion (40) pour effacer le flux de skyrmion vers la région d'extrémité.
  9. La mémoire à skyrmion (100) selon la revendication 8, dans laquelle
    une direction de l'impulsion de courant pour générer un skyrmion (40) diffère d'une direction de l'impulsion de courant pour effacer un skyrmion (40), ou
    avec J étant une magnitude de l'énergie d'interaction d'échange de l'aimant (11), une intensité de champ magnétique de la région d'extrémité devenant inférieure à 0,015J en raison de l'impulsion pour générer un skyrmion (40) et devenant supérieure à 0,04J en raison de l'impulsion pour effacer un skyrmion (40).
  10. Un dispositif de mémoire à skyrmion comprenant :
    une pluralité de mémoires skyrmion (100) selon l'une quelconque des revendications 7 à 9 configurées comme une mémoire à unité de stockage unique ;
    une ligne électrique pour générer un skyrmion (40) connectée à la pluralité de mémoires skyrmion (100) pour générer des skyrmions (40) de la pluralité de mémoires skyrmion (100) ;
    une ligne électrique pour effacer un skyrmion (40) connecté à la pluralité de mémoires skyrmion (100) pour effacer des skyrmions (40) de la pluralité de mémoires skyrmion (100) ;
    une ligne de mesure qui détecte la présence ou l'absence de skyrmions (40) ;
    un transistor à effet de champ (99) qui sélectionne une mémoire de skyrmions (100) pour la ligne électrique pour générer un skyrmion (40), la ligne électrique pour effacer un skyrmion (40), et la ligne de mesure; et
    un circuit de détection (98) qui amplifie une tension ou le courant circulant à travers la ligne de mesure et détecte la présence ou l'absence de skyrmions (40).
  11. Un dispositif de traitement de données (400) comprenant le dispositif de mémoire à skyrmions (100) selon la revendication 10.
  12. Un dispositif électronique à l'état solide intégré à la mémoire skyrmion (200) comprenant le dispositif de mémoire skyrmion selon la revendication 10 et un dispositif électronique à l'état solide (210) formé dans une même puce.
  13. Un dispositif de stockage de données (300) comprenant le dispositif de mémoire à skyrmion selon la revendication 10.
  14. Un dispositif de communication de données (500) comprenant le dispositif de mémoire skyrmion selon la revendication 10.
EP15837815.8A 2014-09-02 2015-08-21 Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données Active EP3190627B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014178589 2014-09-02
PCT/JP2015/073562 WO2016035579A1 (fr) 2014-09-02 2015-08-21 Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données

Publications (3)

Publication Number Publication Date
EP3190627A1 EP3190627A1 (fr) 2017-07-12
EP3190627A4 EP3190627A4 (fr) 2018-05-02
EP3190627B1 true EP3190627B1 (fr) 2021-05-05

Family

ID=55439645

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15837815.8A Active EP3190627B1 (fr) 2014-09-02 2015-08-21 Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données

Country Status (5)

Country Link
US (1) US10141068B2 (fr)
EP (1) EP3190627B1 (fr)
JP (1) JP6637427B2 (fr)
KR (1) KR102019687B1 (fr)
WO (1) WO2016035579A1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102099068B1 (ko) * 2014-10-28 2020-04-08 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 자기 소자, 스커미온 메모리, 스커미온 메모리 장치, 스커미온 메모리 탑재 고체 전자 장치, 데이터 기록 장치, 데이터 처리 장치 및 통신 장치
KR101746698B1 (ko) * 2016-03-07 2017-06-14 울산과학기술원 스커미온 다이오드 및 그 제조 방법
JP6712804B2 (ja) 2016-11-18 2020-06-24 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置
JP2018082122A (ja) * 2016-11-18 2018-05-24 国立研究開発法人理化学研究所 磁気素子、スキルミオンメモリ、スキルミオンメモリ搭載中央演算処理ｌｓｉ、データ記録装置、データ処理装置およびデータ通信装置
US10541074B2 (en) * 2017-05-04 2020-01-21 Massachusetts Institute Of Technology Methods and apparatus for making magnetic skyrmions
KR101875931B1 (ko) * 2017-07-07 2018-07-06 울산과학기술원 스커미온 형성을 위한 메탈 구조물, 메탈 구조물 내 스커미온 형성 방법
WO2019087371A1 (fr) * 2017-11-02 2019-05-09 株式会社Ｎｔｔドコモ Dispositif utilisateur et procédé de transmission d'informations de commande
US11462678B2 (en) 2018-03-09 2022-10-04 Intel Corporation Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same
US11430943B2 (en) 2018-06-28 2022-08-30 Intel Corporation Magnetic tunnel junction (MTJ) devices with a synthetic antiferromagnet (SAF) structure including a magnetic skyrmion
US11386951B2 (en) * 2018-06-28 2022-07-12 Intel Corporation Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6834005B1 (en) 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
US7416905B2 (en) * 2005-10-17 2008-08-26 International Busniess Machines Corporation Method of fabricating a magnetic shift register
JP6116043B2 (ja) * 2012-10-19 2017-04-19 国立研究開発法人理化学研究所 スキルミオン駆動方法およびマイクロ素子
US9791470B2 (en) * 2013-12-27 2017-10-17 Intel Corporation Magnet placement for integrated sensor packages
EP3166138B1 (fr) * 2014-07-04 2020-11-11 Riken Mémoire à éléments magnétiques skyrmions, dispositif électronique à semi-conducteurs, dispositif d'enregistrement de données, processeur de données et dispositif de communication

Also Published As

Publication number Publication date
KR102019687B1 (ko) 2019-09-10
US10141068B2 (en) 2018-11-27
EP3190627A4 (fr) 2018-05-02
JP6637427B2 (ja) 2020-01-29
US20170178748A1 (en) 2017-06-22
JPWO2016035579A1 (ja) 2017-07-13
KR20170042622A (ko) 2017-04-19
WO2016035579A1 (fr) 2016-03-10
EP3190627A1 (fr) 2017-07-12

Similar Documents

Publication Publication Date Title
EP3190627B1 (fr) Élément magnétique, mémoire à skyrmion, dispositif de mémoire à skyrmion, dispositif électronique à semi-conducteur, dispositif d'enregistrement de données, dispositif de traitement de données, et dispositif de communication de données
US9859017B2 (en) Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device
EP3100271B1 (fr) Mémoire vive magnétique (mram) à effet hall de spin géant (gshe) - couple de transfert de spin (stt) à faible puissance à haute densité
US9460768B2 (en) Cross point array MRAM having spin hall MTJ devices
KR101293610B1 (ko) 스핀 토크 전달 자기저항 랜덤 액세스 메모리(ｓｔｔ­ｍｒａｍ)에서의 소스 로딩 효과 감소
EP3166138B1 (fr) Mémoire à éléments magnétiques skyrmions, dispositif électronique à semi-conducteurs, dispositif d'enregistrement de données, processeur de données et dispositif de communication
US10003010B2 (en) Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatus
WO2014031444A1 (fr) Dispositif mtj mtp
US20190267427A1 (en) Magnetic element, skyrmion memory, skyrmion memory-mounted central processing lsi, data recording apparatus, data processing apparatus, and data communication apparatus
JP6436348B2 (ja) 磁気素子、スキルミオンメモリ、スキルミオンメモリデバイス、データ処理装置、スキルミオンメモリ搭載固体電子デバイス、データ記録装置、データ処理装置及びデータ通信装置

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170308

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIN1 Information on inventor provided before grant (corrected)

Inventor name: KOSHIBAE, WATARU

Inventor name: KAWASAKI, MASASHI

Inventor name: TOKURA, YOSHINORI

Inventor name: IWASAKI, JUNICHI

Inventor name: KANEKO, YOSHIO

Inventor name: NAGAOSA, NAOTO

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIN1 Information on inventor provided before grant (corrected)

Inventor name: TOKURA, YOSHINORI

Inventor name: KOSHIBAE, WATARU

Inventor name: IWASAKI, JUNICHI

Inventor name: KANEKO, YOSHIO

Inventor name: KAWASAKI, MASASHI

Inventor name: NAGAOSA, NAOTO

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602015069088

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0029820000

Ipc: G11C0011160000

A4 Supplementary search report drawn up and despatched

Effective date: 20180404

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/8246 20060101ALI20180327BHEP

Ipc: H01L 41/08 20060101ALI20180327BHEP

Ipc: G11C 11/16 20060101AFI20180327BHEP

Ipc: H01L 29/82 20060101ALI20180327BHEP

Ipc: H01L 27/105 20060101ALI20180327BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20201215

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1390831

Country of ref document: AT

Kind code of ref document: T

Effective date: 20210515

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602015069088

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1390831

Country of ref document: AT

Kind code of ref document: T

Effective date: 20210505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210805

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210805

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210906

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210806

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210905

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20210505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602015069088

Country of ref document: DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602015069088

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

26N No opposition filed

Effective date: 20220208

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20210831

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20210821

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210831

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210905

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210821

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210821

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210821

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220301

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20210831

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20150821

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230825

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20210505