EP3181939B1 - Procede de fabrication d'un spiral d'une raideur predeterminee par ajout de matiere - Google Patents

Procede de fabrication d'un spiral d'une raideur predeterminee par ajout de matiere Download PDF

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Publication number
EP3181939B1
EP3181939B1 EP15201337.1A EP15201337A EP3181939B1 EP 3181939 B1 EP3181939 B1 EP 3181939B1 EP 15201337 A EP15201337 A EP 15201337A EP 3181939 B1 EP3181939 B1 EP 3181939B1
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EP
European Patent Office
Prior art keywords
balance spring
predetermined
stiffness
fabrication method
balance
Prior art date
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Application number
EP15201337.1A
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German (de)
English (en)
French (fr)
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EP3181939A1 (fr
Inventor
Frédéric Kohler
Jean-Luc Bucaille
Olivier HUNZIKER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Suisse dElectronique et Microtechnique SA CSEM
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Centre Suisse dElectronique et Microtechnique SA CSEM
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Application filed by Centre Suisse dElectronique et Microtechnique SA CSEM filed Critical Centre Suisse dElectronique et Microtechnique SA CSEM
Priority to EP15201337.1A priority Critical patent/EP3181939B1/fr
Priority to JP2016234771A priority patent/JP6343652B2/ja
Priority to US15/372,725 priority patent/US10324418B2/en
Priority to CN201611164474.5A priority patent/CN106997170B/zh
Publication of EP3181939A1 publication Critical patent/EP3181939A1/fr
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    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D3/00—Watchmakers' or watch-repairers' machines or tools for working materials
    • G04D3/0069—Watchmakers' or watch-repairers' machines or tools for working materials for working with non-mechanical means, e.g. chemical, electrochemical, metallising, vapourising; with electron beams, laser beams
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/04—Oscillators acting by spring tension
    • G04B17/06—Oscillators with hairsprings, e.g. balance
    • G04B17/066—Manufacture of the spiral spring
    • G—PHYSICS
    • G04—HOROLOGY
    • G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
    • G04B17/00—Mechanisms for stabilising frequency
    • G04B17/20—Compensation of mechanisms for stabilising frequency
    • G04B17/22—Compensation of mechanisms for stabilising frequency for the effect of variations of temperature
    • G—PHYSICS
    • G04—HOROLOGY
    • G04D—APPARATUS OR TOOLS SPECIALLY DESIGNED FOR MAKING OR MAINTAINING CLOCKS OR WATCHES
    • G04D7/00—Measuring, counting, calibrating, testing or regulating apparatus
    • G04D7/10—Measuring, counting, calibrating, testing or regulating apparatus for hairsprings of balances

Definitions

  • the invention relates to a method of manufacturing a hairspring of predetermined stiffness and, more precisely, such a hairspring used as a compensating hairspring cooperating with a predetermined inertia beam to form a resonator having a predetermined frequency.
  • WO2012007460 shows a method of adjusting oscillation frequency of a sprung-balance assembly by removing or / and adding or / and moving material on at least one component of said assembly.
  • the object of the present invention is to overcome all or part of the disadvantages mentioned above by proposing a manufacturing process a spiral whose dimensions are precise enough not to require retouching.
  • the invention relates to a method of manufacturing a hairspring of a predetermined stiffness according to claim 1.
  • the invention relates to a resonator 1 of the balance 3-spiral type 5.
  • the balance 3 and the spiral 5 are preferably mounted on the same axis 7.
  • the thermal dependence also includes a possible contribution of the maintenance system such as, for example, a Swiss lever escapement (not shown) cooperating with the ankle 9 of the plate 11 also mounted on the axis 7.
  • a Swiss lever escapement (not shown) cooperating with the ankle 9 of the plate 11 also mounted on the axis 7.
  • the invention more particularly relates to a resonator 1 in which the hairspring 5 is used to thermally compensate the whole of the resonator 1, that is to say all the parts and in particular the balance 3.
  • a hairspring 5 is generally called a compensating spiral. Therefore, the invention relates to a manufacturing method for ensuring a very high dimensional accuracy of the spiral and, incidentally, to ensure a more precise stiffness of said spiral.
  • the compensating spiral 5, 15 is formed based on a material, optionally coated with a thermal compensation layer, and intended to cooperate with a predetermined balance beam 3 of inertia.
  • a material optionally coated with a thermal compensation layer, and intended to cooperate with a predetermined balance beam 3 of inertia.
  • the silicon-based material used for producing the compensating balance spring may be monocrystalline silicon regardless of its crystalline orientation, doped monocrystalline silicon regardless of its crystalline orientation, amorphous silicon, porous silicon or polycrystalline silicon, silicon nitride, silicon carbide, quartz whatever its crystalline orientation or silicon oxide.
  • silicon-based material may be monocrystalline silicon regardless of its crystalline orientation, doped monocrystalline silicon regardless of its crystalline orientation, amorphous silicon, porous silicon or polycrystalline silicon, silicon nitride, silicon carbide, quartz whatever its crystalline orientation or silicon oxide.
  • other materials can be envisioned as a glass, a ceramic, a cermet, a metal or a metal alloy.
  • the explanation below will be focused on a silicon-based material.
  • Each type of material may be surface-modified or layer-coated to thermally compensate for the base material as explained above.
  • etching spirals in a silicon-based wafer, by means of a deep reactive ion etching (also known by the abbreviation "DRIE"), is the most accurate, phenomena that occur during the engraving or between two successive engravings can nevertheless induce geometric variations.
  • DRIE deep reactive ion etching
  • FIB localized ion etching
  • galvanic growth growth by chemical vapor deposition or chemical engraving, which are less accurate and for which the process would make even more sense.
  • the invention relates to a method 31 for manufacturing a spiral 5c.
  • the method 31 comprises, as illustrated in FIG. figure 7 a first step 33 intended to form at least one hairspring 5a, for example based on silicon, according to dimensions Da less than the dimensions Db necessary to obtain said hairspring 5c of a predetermined stiffness C.
  • the spiral section 5a has a height H 1 and a thickness E 1 .
  • the dimensions Da of the hairspring 5a are substantially between 1% and 20% lower than those Db of the hairspring 5c necessary to obtain said hairspring 5c of a predetermined stiffness C.
  • step 33 is carried out using a deep reactive ion etching in a wafer 23 of a silicon-based material as illustrated in FIG. figure 6 .
  • the opposite faces F 1 , F 2 are corrugated because a deep reactive ion etching of the Bosch type causes a slot etching structured by the successive stages of attack and passivation.
  • step 33 can not be limited to a particular step 33.
  • step 33 could equally well be obtained by chemical etching in a wafer 23 of a material for example based on silicon.
  • step 33 means that one or more spirals are formed, i.e., step 33 makes it possible to form bulk spirals or alternately formed in a wafer of a material.
  • step 33 several spirals 5a may be formed in the same plate 23 in dimensions Da, H 1 , E 1 smaller than the dimensions Db, H 2 , E 2 needed to obtain several spirals 5c of a predetermined stiffness C or several spirals 5c of several predetermined stiffnesses C.
  • Step 33 is also not limited to the formation of a hairspring 5a in dimensions Da, H 1 , E 1 smaller than the dimensions Db, H 2 , E 2 necessary to obtain a hairspring 5c of a predetermined stiffness C, formed using a single material.
  • the step 33 could equally well form a hairspring 5a according to dimensions Da, H 1 , E 1 smaller than the dimensions Db, H 2 , E 2 needed to obtain a hairspring 5c of a predetermined stiffness C of a composite material. that is to say comprising several different materials.
  • the method 31 includes a second step 35 for determining the stiffness of the hairspring 5a.
  • a step 35 may be carried out directly on the hairspring 5a still attached to the wafer 23 or on the hairspring 5a previously detached from the wafer 23, on the whole, or on a sample of the spirals still attached to a wafer 23 or on a spiral sample previously detached from a wafer 23.
  • the step 35 includes a first phase intended to measure the frequency f of an assembly comprising the hairspring 5a coupled with a balance having a predetermined inertia I. then, using the relation (5), deduce, in a second phase, the stiffness C spiral 5a.
  • Such a measurement phase can in particular be dynamic and carried out according to the teachings of the document EP 2 423 764 .
  • a static method, carried out according to the teachings of the document EP 2 423 764 can also be used to determine the stiffness C of the spiral 5a.
  • step 35 may also consist of a determination of the average stiffness of a representative sample or of all spirals formed on the same plate.
  • the method 31 comprises a step 37 intended to calculate, using the relation (2), the thickness of the missing material for obtain the hairspring 5c of a predetermined stiffness C, that is to say the volume of material to be added and / or to modify homogeneously or not on the surface of the hairspring 5a.
  • step 39 intended to modify the hairspring 5a formed during step a), to compensate for said thickness of missing material making it possible to obtain the hairspring 5c with the dimensions Db, H 2 , E 2 required for said stiffness C predetermined. It is therefore understood that it does not matter that the geometric variations have occurred on the thickness and / or the height and / or the length of the hairspring 5a insofar as, according to equation (2), it is the product h ⁇ E 3 which determines the rigidity of the turn.
  • a homogeneous thickness over the entire external surface may be added and / or modified, a non-homogeneous thickness over the entire external surface may be added and / or modified, a uniform thickness only over a portion of the outer surface may be added and / or modified, or a non-homogeneous thickness only on a portion of the outer surface may be added and / or modified.
  • step 39 could consist of adding material only according to the thickness E 1 or according to the height H 1 of the spiral 5a.
  • step 39 comprises a phase d1 intended to deposit a layer on a portion of the outer surface of the hairspring 5a formed during step 33 in order to obtain the hairspring 5c with dimensions Db, H 2 , E 2 required for said predetermined stiffness C.
  • a phase d1 can, for example, be obtained by thermal oxidation, by galvanic growth, by physical vapor deposition (known by the abbreviation “PVD”), by chemical vapor deposition (known by the abbreviation “CVD”), by atomic layer deposition (known by the abbreviation "ALD”) or by any other additive method.
  • phase d1 may, for example, be carried out by a chemical vapor deposition for forming polysilicon on the hairspring 5a in monocrystalline silicon in order to obtain the hairspring 5c with dimensions Db, H 2 , E 2 necessary for the predetermined stiffness C.
  • the spiral section 5c has a height H 2 and a thickness E 2 . It can be seen that the hairspring 5c is formed of a central portion 22 based on monocrystalline silicon and a peripheral portion 24 made of polycrystalline silicon according to the overall dimensions Db required for the predetermined stiffness C.
  • step 39 may consist of a d2 phase to modify the structure in a predetermined depth of a portion of the outer surface 5a of the spiral to obtain the spiral 5c the dimensions Db, H 2, E 2 necessary for the predetermined stiffness C.
  • amorphous silicon is used to form the hairspring 5a, it may be provided to crystallize it to a predetermined depth forming a central portion 22 of amorphous silicon and a peripheral portion 24 of polycrystalline silicon to obtain the hairspring 5c with dimensions Db , H 2 , E 2 required for the predetermined stiffness C.
  • step 39 may consist of a phase d3 intended to modify the composition to a predetermined depth of a portion of the outer surface of the hairspring 5a of a predetermined stiffness C.
  • a phase d3 intended to modify the composition to a predetermined depth of a portion of the outer surface of the hairspring 5a of a predetermined stiffness C.
  • monocrystalline or polycrystalline silicon it may be provided to dope or diffuse interstitial or substitutional atoms therein at a predetermined depth forming a central portion 22 of monocrystalline or polycrystalline silicon and a portion peripheral 24 doped or diffused with the aid of atoms different from the silicon in order to obtain the spiral 5c with the dimensions Db, H 2 , E 2 necessary for the predetermined stiffness C.
  • this third variant does not necessarily imply an increase in volume but at least superficially increases the Young's modulus making it possible to obtain the predetermined stiffness C.
  • Step 39 may finish process 31. However, after step 39, method 31 may also perform, at least one more time, steps 35, 37 and 39 in order to further refine the dimensional quality of the hairspring .
  • steps 35, 37 and 39 may, for example, be of particular interest when the execution of the first iteration of steps 35, 37 and 39 is performed on the set, or on a sample, of the spirals still attached to a wafer 23, then in a second iteration, on the assembly, or a sample, spirals previously detached from the wafer 23 having undergone the first iteration.
  • the method 31 may also continue with all or part of the process 40 illustrated in FIG. figure 7 comprising optional steps 41, 43 and 45.
  • the method 31 can thus continue with step 41 intended to form, on at least a part of the hairspring 5c, a portion 26 for correcting the stiffness of the spiral 5c and form a spiral 5, 15 less sensitive to thermal variations.
  • step 41 may consist of a phase e1 intended to deposit a layer on a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • the phase e1 may consist in oxidizing the spiral 5c to coat it with silicon dioxide in order to correct the stiffness of the spiral 5c and form a spiral 5, 15 which is thermally compensated.
  • a phase e1 can, for example, be obtained by thermal oxidation.
  • thermal oxidation can, for example, be carried out between 800 and 1200 ° C under an oxidizing atmosphere using water vapor or oxygen gas to form silicon oxide on the spiral 5c.
  • the balance spring 5, 15 as shown in FIG. figure 5 which, advantageously according to the invention, comprises a composite core 22/24 based on silicon and a coating 26 based on silicon oxide.
  • the balance spring 5, 15 compensator thus has a very high dimensional accuracy especially as to the height H 3 and the thickness E 3 , and, incidentally, a thermal compensation of the entire resonator 1 very thin .
  • the overall dimensions Db can be found using the teachings of the document EP 1 422 436 to apply it to the resonator 1 which is intended to be manufactured, that is to say to compensate for all the constituent parts of the resonator 1 as explained above.
  • step 41 may consist of a phase e2 intended to modify the structure to a predetermined depth of a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • a phase e2 intended to modify the structure to a predetermined depth of a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • an amorphous silicon is used for the peripheral portion 24 and, optionally, the central portion 22, it can be provided to crystallize it to a predetermined depth in the peripheral portion 24 and, optionally, in the central portion 22.
  • step 41 may consist of a phase e3 intended to modify the composition to a predetermined depth of a portion of the outer surface of said hairspring 5c of a predetermined stiffness C.
  • a monocrystalline or polycrystalline silicon is used for the peripheral part 24 and, possibly, the central part 22, it can be provided to dope it or to diffuse interstitial or substitutional atoms to a predetermined depth. in the peripheral portion 24 and, optionally, in the central portion 22.
  • the method 31 can also comprise step 45 intended to assemble a compensating hairspring 5, 15 obtained during step 41, or a hairspring 5c obtained during step 39, with a predetermined inertia beam obtained during of step 43 to form a resonator 1 of the balance-balance type which is thermally compensated or not, that is to say whose frequency f is sensitive or not to temperature variations.
  • the balance even if it comprises a predefined construction inertia, may comprise movable weights to provide a setting parameter before or after the sale of the timepiece.
  • step 39 and step 41 could be provided in order to deposit a functional or aesthetic layer, such as, for example, a layer of curing or a luminescent layer.
  • step 35 is not systematically implemented.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Springs (AREA)
EP15201337.1A 2015-12-18 2015-12-18 Procede de fabrication d'un spiral d'une raideur predeterminee par ajout de matiere Active EP3181939B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP15201337.1A EP3181939B1 (fr) 2015-12-18 2015-12-18 Procede de fabrication d'un spiral d'une raideur predeterminee par ajout de matiere
JP2016234771A JP6343652B2 (ja) 2015-12-18 2016-12-02 材料の追加によって所定の厚さをもつひげぜんまいを製作する方法
US15/372,725 US10324418B2 (en) 2015-12-18 2016-12-08 Method for fabrication of a balance spring of predetermined thickness through the addition of material
CN201611164474.5A CN106997170B (zh) 2015-12-18 2016-12-16 用于通过增加材料制造预定厚度的游丝的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP15201337.1A EP3181939B1 (fr) 2015-12-18 2015-12-18 Procede de fabrication d'un spiral d'une raideur predeterminee par ajout de matiere

Publications (2)

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EP3181939A1 EP3181939A1 (fr) 2017-06-21
EP3181939B1 true EP3181939B1 (fr) 2019-02-20

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US (1) US10324418B2 (zh)
EP (1) EP3181939B1 (zh)
JP (1) JP6343652B2 (zh)
CN (1) CN106997170B (zh)

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EP3534222A1 (fr) * 2018-03-01 2019-09-04 Rolex Sa Procédé de réalisation d'un oscillateur thermo-compensé
TWI774925B (zh) * 2018-03-01 2022-08-21 瑞士商Ｃｓｅｍ瑞士電子及微技術研發公司 製造螺旋彈簧的方法
TWI796444B (zh) 2018-03-20 2023-03-21 瑞士商百達翡麗日內瓦股份有限公司 用於製造精確剛度之時計熱補償游絲的方法
CH715242A2 (fr) 2018-08-09 2020-02-14 Nivarox Sa Composant notamment horloger avec une topologie de surface et son procédé de fabrication.
US10703625B1 (en) * 2019-03-29 2020-07-07 Industrial Technology Research Institute Microelectromechanical system (MEMS) apparatus with adjustable spring
CH716605A1 (fr) 2019-09-16 2021-03-31 Richemont Int Sa Procédé de fabrication d'une pluralité de résonateurs sur une plaquette.
EP3982205A1 (fr) 2020-10-06 2022-04-13 Patek Philippe SA Genève Procede de fabrication d'un ressort horloger de raideur precise
EP4030241A1 (fr) 2021-01-18 2022-07-20 Richemont International S.A. Procede de fabrication de ressorts spiraux d'horlogerie
EP4030243A1 (fr) 2021-01-18 2022-07-20 Richemont International S.A. Procédé de controle et de fabrication de ressorts spiraux d' horlogerie
EP4202576A1 (fr) 2021-12-22 2023-06-28 Richemont International S.A. Procédé de contrôle et de fabrication de ressorts spiraux d'horlogerie
WO2023117350A1 (fr) 2021-12-22 2023-06-29 Richemont International Sa Procédé de controle et de fabrication de ressorts spiraux d'horlogerie
EP4310598A1 (fr) 2022-07-18 2024-01-24 Richemont International S.A. Procédé de controle et de fabrication de ressorts spiraux d'horlogerie

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Publication number Priority date Publication date Assignee Title
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US3782169A (en) 1969-07-11 1974-01-01 Fab D Assortiments Reunies Regulating the frequency of an oscillatory system including a balance and a coiled spring
EP1213628A1 (fr) 2000-12-07 2002-06-12 Eta SA Fabriques d'Ebauches Procédé de réglage de la fréquence d'oscillation d'un balancier-spiral pour une pièce d'horlogerie mécanique
EP1422436A1 (fr) 2002-11-25 2004-05-26 CSEM Centre Suisse d'Electronique et de Microtechnique SA Ressort spiral de montre et son procédé de fabrication
EP1655642A2 (fr) 2003-02-06 2006-05-10 ETA SA Manufacture Horlogère Suisse Spiral de résonateur balancier-spiral
WO2005109639A2 (en) 2004-04-28 2005-11-17 Robert Bosch Gmbh Method for adjusting the frequency of a mems resonator
WO2007000271A1 (fr) 2005-06-28 2007-01-04 Eta Sa Manufacture Horlogere Suisse Piece de micro-mecanique renforcee
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CN106997170A (zh) 2017-08-01
US20170176942A1 (en) 2017-06-22
EP3181939A1 (fr) 2017-06-21
JP6343652B2 (ja) 2018-06-13
CN106997170B (zh) 2019-10-15
JP2017111132A (ja) 2017-06-22

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