EP3154903A1 - Procede de preparation de nanofils de silicium - Google Patents
Procede de preparation de nanofils de siliciumInfo
- Publication number
- EP3154903A1 EP3154903A1 EP15734462.3A EP15734462A EP3154903A1 EP 3154903 A1 EP3154903 A1 EP 3154903A1 EP 15734462 A EP15734462 A EP 15734462A EP 3154903 A1 EP3154903 A1 EP 3154903A1
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- EP
- European Patent Office
- Prior art keywords
- silicon
- silicon nanowires
- nanowires
- sacrificial
- nanoparticles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Definitions
- the present invention relates to a process for the preparation of a material based on silicon nanowires, the materials that can be obtained according to this method and their use in particular in lithium batteries, in super-capacitors, in thermoelectric devices. energy recovery or cooling in electronic detectors of chemical or biological substances in gaseous or liquid phase.
- Silicon has long been studied as anode material for lithium batteries [1] because of its exceptional ability to store lithium, which leads to a very high energy density mass, which can theoretically reach 3700 mAh / boy Wut.
- the crystalline silicon powder in the form of microparticles is also an inexpensive material, a by-product of the CMOS electronic industry.
- lithium batteries based on silicon anodes show a sharp drop in electrical storage capacity after a small number of charge / discharge cycles, due in particular to silicon fracture due to lithiation / delithiation cycles [ 2] and the loss of electrical connection with a significant portion of the silicon in the anode [3] .
- silicon can be introduced in the form of nanoparticles [1] .
- the electrical contact of the nanoparticles with the electrode must be ensured by the addition of a conductive component such as carbon black. During the cycles, some of the nanoparticles lose contact with the electrode [3] .
- silicon nanowires [4] makes it possible to maintain a high mass density of energy, to avoid the fracturing of silicon and to maintain a good electrical contact of the silicon with the electrode thanks to the elongated shape of the nanowires which favors network contacts.
- silicon nanowire electrodes also represent an interesting alternative to carbon because they show a high specific surface area [5] , a high conductivity if the nanowires are (ultra) doped [6] , and a high stability chemically cycling even with high voltages [7] , which ensures a high energy density stored in the super-capacitor.
- silicon nanowires must be synthesized specifically for the application, unlike silicon nanopowders recovered as a cheap industrial by-product. It is therefore important for any industrial application of this material to develop an adaptable synthesis on a large scale and at low cost.
- the pyrolytic synthesis proposed by Pr SB Rananavare [13] allows mass synthesis using as a synthetic substrate a sacrificial porous material, chalk or glass wool.
- the silicon nanowires obtained according to this synthesis have diameters of the order of 20 to 100 nm.
- the diameter of the nanowires is determined by the diameter of the nanoparticles of catalysts.
- the gold nanoparticles used in this study have small diameters from S to 10 nm, they diffuse under the effect of heat on the surface of the support and fuse, which leads to the formation of nanoparticles of larger diameters. , therefore to the growth of nanowires of diameter 20 to 100 nm.
- the catalyst nanoparticles remain small, so that the silicon nanowires obtained according to the process of the invention have a homogeneous diameter of 12 ⁇ 3 nm, which is a much smaller diameter than that described in FIG. prior art.
- they have lengths of 0.5 to 5 microns and a high aspect ratio of 50 to 500, the aspect ratio being defined as the length of the object relative to its diameter.
- This quality gives the material a very large surface area.
- the active surface of the electrode is therefore higher for the same volume or the same mass as another type of electrode, which increases the current density of the device.
- this sacrificial support is eliminated in water, without dangerous reagent and without risk of degradation of the surface of the nanowires.
- the nanowires are recovered pure in the form of a black powder by simple washing with water, with a reproducible synthetic yield, generally of the order of 15%, much higher than the yields of conventional synthesis in the vapor phase.
- This material can be obtained in powder form in large quantities (50 mg batches at the laboratory scale) for a low synthesis cost, thanks to a synthesis method based on inexpensive and air-stable reagents, (such as phenylsilane or diphenylsilane, gold nanoparticles, and cooking salt), and on a short heat treatment at moderate temperature (typically one hour at 450 ° C).
- the material can be easily suspended in various solvents for shaping by simple and inexpensive techniques of the state of the art, for example coating. The material is therefore easily industrialized on a large scale in everyday objects, such as rechargeable accumulators.
- the silicon nanowires are reproducibly obtained in the form of a collection of nanowires of very homogeneous diameters and constant from one batch to another. This characteristic of homogeneity ensures a constant quality of manufacture of the material and the electrodes which contain them.
- the process is easy to implement and easy to industrialize because it uses products that are stable in the air. It also makes it possible to obtain silicon nanowires in industrial quantities.
- a first object of the invention relates to a process for preparing a material based on silicon nanowires, comprising the steps of: i) contacting, under an inert atmosphere, a sacrificial carrier based on an alkali metal, alkaline earth metal or transition metal halide, carbonate, sulphate or nitrate, comprising a catalyst consisting of metallic nanoparticles, on the one hand, with the pyrolysis vapors of a silicon source comprising a silane compound on the other hand, whereby silicon nanofilts deposited on said sacrificial support are obtained; and eventually
- the term "based on an alkali metal, alkaline earth metal or transition metal halide, carbonate, sulphate or nitrate” means consisting of or comprising mainly, in particular more than 50% by weight, in particular more than 75% by weight of an alkali metal, alkaline earth or transition metal halide.
- the sacrificial support based on an alkali metal, alkaline earth or transition metal halide, carbonate, sulphate or nitrate may be chosen in particular from KCl, MgCl 2 , CaCl 2 and Na 2 CO 3 .
- the sacrificial support is in the form of a powder.
- the sacrificial support based on an alkali metal, alkaline earth metal or transition metal halide, carbonate, sulphate or nitrate is typically prepared by grinding said anhydrous halide, for example by means of a cylinder of zirconia ball milling.
- the powder of said alkali metal, alkaline earth or transition metal halide, carbonate, sulfate or nitrate is composed of particles whose diameter is between 10 nm and 50 ⁇ m, in particular between 50 nm and 50 ⁇ m, in particular between 1 ⁇ m and 50 ⁇ m. , in particular of approximately 10 ⁇ m. This size advantageously makes it possible to limit the melting of the catalyst particles and thus to limit the formation of nanofilms having a large diameter.
- the alkali, alkaline earth or transition metal halide, carbonate, sulfate or nitrate powder is preferably stored under anhydrous conditions.
- the metal nanoparticles are in particular nanoparticles of a metal catalyst, in particular nanoparticles of a metal, a bimetallic compound or a metal oxide.
- the nanoparticles of a metal are especially nanoparticles of gold, cobalt, nickel, bismuth, tin, manganese, or iridium.
- Nanoparticles of a bimetallic compound are especially nanoparticles of MnPt 3 or FePt.
- the nanoparticles of a metal oxide are in particular nanoparticles of ferric oxide (Fe 2 O 3 ).
- the catalyst is preferably made of gold nanoparticles.
- the gold nanoparticles used in the process according to the invention can be synthesized according to the method of the state of the art described in the article by House et al. [14] .
- the diameter of the catalyst nanoparticles can be between 1 and 10 nm and is in particular 1 to 2 nm.
- the surface of the catalyst nanoparticles may be covered with a ligand such as dodecanethiol.
- the catalyst nanoparticles may be dispersed in a solvent such as toluene, especially at a concentration of 50 mg / ml, to constitute a stock solution of catalyst nanoparticles.
- the stock solution of catalyst nanoparticles is added to the sacrificial salt carrier in an anhydrous apolar solvent, such as anhydrous hexane. After removal of the solvent under a flow of inert gas, the solid obtained can be ground under an inert atmosphere.
- anhydrous apolar solvent such as anhydrous hexane
- the sacrificial support is brought into contact with the pyrolysis vapors of a silicon source comprising a silane compound under an inert atmosphere.
- Step i) is especially carried out at a temperature of between 300 and 1300 ° C., in particular at 450 ° C.
- the silicon source undergoes pyrolysis, that is to say a thermal decomposition leading to the formation of pyrolysis vapors which, in contact with the sacrificial support, will lead to the growth of silicon nanoflls on the sacrificial support.
- the silicon source comprises a silane compound or a mixture of silane compounds.
- the silane compound is in particular an organosilane, in particular an organomonosilane, an organodisilane or an organotrisilane, or a single silane of formula with n ranging from 1 to 10.
- the organosilane can be in particular a mono-, di-, triarylsilane such as monophenylsilane, diphenylsilane, triphenylsilane, or a mono-, di-, tri-alkylsilanes such as octylsilane.
- step i) is carried out under an inert atmosphere, that is to say in the absence of oxygen and under anhydrous conditions, in particular under vacuum, or under a stream of inert gas such as argon or nitrogen.
- the contacting of the sacrificial support and the pyrolysis vapors in step i) is carried out in the presence of a doping agent.
- the doping agent can be selected from organophosphines, such as diphenylphosphine, organoboranes such as triphenylborane, diphenylboronic anhydride; organoarsines; aromatic amines, such as diphenylamine, or triphenylamine.
- Step ii) consists in eliminating the sacrificial support for recovering the unsupported silicon nanowires, possibly doped. This step includes a step of washing with water the silicon nanowires obtained by growth on the sacrificial support in step i).
- the method according to the invention further comprises a step iii) of coating the surface of the silicon nanowires obtained in step ii) or in step i), by an organic or inorganic functional layer.
- These nanowires can be functionalized for example by a silicon oxide layer according to the method described by Berton et al. [7] , or by a polymer layer according to the electrochemical method described by Aradilla et al. [15] , or by a diamond layer according to the process in the international application WO2013057218.
- the silicon nanowires from steps ii) and / or iii) are deposited on a support, in particular a conductive or semiconductive support.
- a support in particular a conductive or semiconductive support.
- the silicon nanowire powder (lmg) is suspended in 50 ⁇ l of chloroform by stirring in an ultrasonic bath. The suspension is deposited in drop on a silicon substrate until complete evaporation of the solvent After drying, the silicon nanowires form a porous homogeneous layer of 25 .mu.m thick on the substrate.
- the silicon nanowires from steps ii) and / or iii) are assembled to form a self-supporting material, such as a silicon nanowire felt.
- a self-supporting material such as a silicon nanowire felt.
- the silicon nanowire powder is suspended in chloroform as previously described. The suspension is filtered on a filter membrane, optionally in a vacuum filtration apparatus. After drying, the silicon nanowire film removed from the filter is a porous material.
- the silicon nanowire powder is compressed into a pellet in a hydraulic press. The pellet constitutes a nanostructured material of interest as a thermoelectric material.
- the synthesis of the silicon nanowires according to the process of the invention can be carried out in batches as in the example below, or in continuous or semi-continuous flow.
- the sacrificial salt carrier carrying the catalyst nanoparticles can be placed in a growth chamber, and exposed by opening a valve to another chamber containing the pyrolyzed silicon source.
- the sacrificial salt carrier carrying the catalyst nanoparticles can pass at a controlled rate into the growth chamber, and be exposed to the vapors leaving a pyrolysis chamber of the silicon source.
- the fluidized bed or treadmill methods are adapted to the synthesis of the nanowires of the invention.
- Another subject of the invention relates to a material based on silicon nanowires that can be obtained according to the process as defined above.
- silicon nanowire material is meant a material comprising or consisting of silicon nanowires.
- D can in particular be silicon nanowires, doped or not, deposited on the sacrificial support as obtained in step i), or without support as recovered in step ii), covered or not with a surface coating according to step iii), deposited on any other support of interest according to step iv), or assembled to form a self-supporting material according to step v).
- This material may be characterized in that the silicon nanowires have a diameter of less than 20 nm and a length greater than 500 nm.
- the size of the nanowires in particular their diameter and / or length can be measured according to conventional techniques, such as scanning electron microscopy and transmission.
- the silicon nanowires in particular have a diameter of between 9 nm and 15 nm, in particular of 12 nm ⁇ 3 nm. Typically, this diameter is homogeneous over all silicon nanowires, that is to say that less than 30% standard deviation is observed in the diameter distribution.
- the silicon nanowires in particular have a length of between 500 nm and 5 ⁇ m.
- the silicon nanowires according to the invention advantageously have a high degree of purity, in particular no impurity related to the support, in particular because of the soluble character of the sacrificial support.
- Another object of the present application relates to the use of a material based on silicon nanowires as defined above for the preparation of electrodes for lithium batteries, supercapacitors, thermoelectric devices, detectors electronic systems of chemical or biological substances.
- Silicon then sees its volume increase by a factor of 4, which causes strong tensions on the surface of the particle. Beyond a critical size of the order of 200 nm, the particle fractures under the effect of mechanical stress. When discharging the battery, delithiation causes a reduction in volume, but the fractured particles remain separate [1] . Fractured pieces that are no longer electrically connected to the electrode no longer participate in the charge / discharge cycles and the capacity of the battery decreases.
- the silicon nanowires according to the invention have a long length and a large aspect ratio, which implies that they advantageously form a conductive percolating network once deposited on a surface.
- the silicon nanowires according to the invention are electrically connected by contact with the other nanowires, and can therefore participate in charging / discharging.
- the silicon nanowires according to the invention have a sufficiently fine diameter to avoid fracture, so the capacity of the battery will be retained during the cycles.
- the low-cost qualities and simple implementation in the form of liquid suspension are also important assets for the industrial manufacture of batteries.
- the materials based on silicon nanowires according to the invention are particularly useful for preparing anodes for lithium-metal, lithium-ion, lithium-air, lithium-sulfur or other lithium or sodium battery technologies.
- silicon nanowire-based electrodes resist high voltages, and show a high stability to cycling.
- the current density increases as the diameter of the nanowires decreases [5] .
- the silicon nanowires according to the invention advantageously make it possible to obtain higher current densities thanks to their very fine diameter.
- the materials based on silicon nanowires according to the invention are thus particularly useful for the preparation of anodes and / or cathodes of supercapacitors, micro-supercapacitors or ultra-micro-capacitors.
- the silicon nanowire-based material according to the invention can also be used for applications in thermoelectric energy recovery or cooling devices. Indeed, the thermoelectric materials must have both a high Seebeck coefficient, a good electrical conductivity and a low thermal conductivity. Silicon is an interesting thermoelectric material when it is strongly doped thanks to a high electrical conductivity and a high Seebeck coefficient. However, performance can be improved if the thermal conductivity is reduced. Indeed, the thermal conductivity of the silicon nanowires is reduced by at least a factor of 10 if the diameter of the nanowires is less than 20 nm ([3]), which is the case of the silicon nanowires according to the invention.
- thermoelectric solid material The silicon nanowires according to the invention, optionally mixed with other components, and compressed into a thermoelectric solid material are particularly useful for the preparation of a Peltier cooling unit or thermoelectric generator for recovering thermal energy.
- the silicon nanowire-based material is also useful for the preparation of a sensitive conductive support of resistive chemical detector, capacitive or in field effect transistor mode.
- Another subject of the invention concerns the use of sodium chloride as a sacrificial support for the preparation of a material based on silicon nanowires.
- nanowire is meant a wire whose diameter is less than 100 nm, especially between 1 and 50 nm.
- the silicon nanowires obtained according to the process of the invention advantageously have a diameter of between 1 and 30 nm, especially between S and 20 nm, in particular between 8 and 15 nm.
- sacrificial support is meant a temporary support, necessary for the synthesis of silicon nanowires, but intended for, or capable of being removed after the formation of silicon nanowires on its surface.
- Figure 1 Scanning electron microscopy image of silicon nanowires of the invention.
- Figure 4 Evolution of the capacitance of the super-capacitor of Example 4 with the number of charge / discharge cycles.
- Gold nanoparticles are synthesized according to the method of the state of the art described in the article by House et al. [14] Their diameter is 1 to 2 nm, their surface is covered with dodecanethiol. They are dispersed in toluene at a concentration of 50 mg / ml to constitute the parent solution of gold nanoparticles.
- the sacrificial salt carrier is prepared by grinding anhydrous sodium chloride. 200 g of anhydrous sodium chloride is placed in a zirconia ball milling cylinder. The cylinder is closed and is rotated for 24 hours. The salt powder obtained has an average size of 10 ⁇ m. It is kept away from the air.
- 3/40 ⁇ L of stock solution of gold nanoparticles are mixed with 1 g of sacrificial salt carrier in 20 mL of dry hexane. Hexane is evaporated under a flow of inert gas (argon or nitrogen) in 3 hours. The dry solid is transferred into a mortar and finely ground with a pestle under an inert atmosphere. The powder is deposited in an alumina crucible.
- inert gas argon or nitrogen
- the reactor is a tube 16 mm in outer diameter Pyrex thickness i mm, with two constrictions at 3 cm and 6 cm from the bottom approximately in the bottom of the reactor (left in Figure 1). 184 mg of diphenylsilane is deposited, ie 1 mmol, and then
- the reactor on the top of the reactor (right in Figure 1) is deposited the crucible containing the sacrificial support impregnated with gold nanoparticles. The reactor is then placed on a vacuum ramp and torch sealed to about 10 cm from the bottom.
- the reactor is placed in an oven at 450 ° C for 1 h, then it is taken out of the oven and allowed to cool for 30 minutes at room temperature. The reactor is broken under ambient conditions.
- the sacrificial salt carrier covered with silicon nanowires is transferred from the crucible into a 40 mL plastic centrifuge tube with S mL of chloroform.
- the suspension in chloroform is washed three times with 30 ml of water under ultrasound in an ultrasonic bath.
- the solid obtained consists of 5 to 10 mg of silicon nanowires ready for use.
- step 4 / diphenylphosphine is introduced as a mixture in diphenylsilane in a proportion of 0.1 to 3% by weight.
- the paste obtained is deposited by coating on a metal film at 0.8 mg / cm 2 and dried for 6 hours at 60 ° C. under vacuum.
- the electrode is mounted as a cathode in a lithium battery, with a Villedon separator impregnated with an electrolyte consisting of a solution of LiPF 6 in a 1/1 mass mixture of ethylene carbonate and diethyl carbonate, against a lithium metal anode.
- the set is sealed in a button cell.
- the lithium battery is tested in discharge / charge cycles over 70 cycles at a rate of C / 20 in the first cycle and C / 5 in subsequent cycles.
- a charge rate of C / 20 indicates that the battery is fully charged in 1/20 hours (1/5 hour respectively).
- the figure shows that, despite the initial drop in capacity due to the formation of a passivation layer on the silicon nanowires, the battery capacity is stabilized at the 20th cycle and then remains constant over at least 50 cycles.
- This high stability demonstrates the excellent resistance of silicon nanowires to the mechanical stresses imposed by lithiation / delithiation cycling, compared to silicon nanopowders which induce, in lithium batteries, a continuous drop in capacitance [3].
- 1 mg of doped silicon nanowires are suspended in 200 ⁇ l of chloroform.
- a piece of ultra-doped 1 cm 2 silicon wafer is pickled by dipping in an aqueous solution of hydrofluoric acid at 10% by weight.
- the suspension of silicon nanowires of the invention is deposited on this substrate.
- the deposit is dried in ambient air.
- Two identical electrodes are prepared for the manufacture of a super-capacitor.
- the two electrodes according to the invention are sandwiched together, separated by an Whatman filter paper separator impregnated with an electrolyte consisting of 1-methyl-1-propylpyrolidinium bis-trifluoromethylsulfonide imide liquid.
- the supercapacitor assembly is in an inert atmosphere.
- the capacitive behavior of the super-capacitor is tested by cyclic voltammetry.
- the voltammogram presented in FIG. 3 shows a quasi-ideal capacitive behavior in a large voltage window of 3 V.
- Cycling stability is measured by cycling the supercapacitor over a 2.SV window over 30,000 cycles at a current density of 0.050mA / cm 2 .
- the initial capacitance of the super-capacitor is 17 ⁇ F / cm 2 .
- Figure 4 shows the evolution of capacitance as a function of the number of cycles.
- the capacitance of the super-capacitor is remarkably stable with a drop of just 7% in the first 3000 cycles, then a constant capacitance over time.
- Gold nanoparticles are synthesized according to the method of the state of the art described in the article by House et al. 14 Their diameter is 1 to 2 nm, their surface is covered with dodecanthiol. They are dispersed in toluene at a concentration of 50 mg / ml to constitute the stock solution of gold nanoparticles.
- the calcium carbonate nanoparticle sacrificial carrier is a commercial product, which has an appearance of a white powder with average nanoparticle size of 67 nm. The product is kept away from moisture.
- Steps 4 / and 5 / described in Example 1 are repeated with the only modification that in step 4/368 mg of diphenylsilane are used. that is 2 mmol.
- the sacrificial carrier of calcium carbonate nanoparticles is transferred from the crucible into a 40 mL plastic centrifuge tube with S mL of chloroform.
- the suspension is washed three times with 20 ml of the aqueous hydrochloric acid solution (1M) HCl and then twice with 20 ml of water under ultrasound in an ultrasonic bath. Step 7 / is repeated.
- the solid obtained consists of 17 to 20 mg of silicon nanowires ready for use.
- step 4 / diphenylposphin is introduced as a mixture in diphenylsilane in proportion 0.1 to 3% by weight.
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Abstract
Description
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1455431A FR3022234B1 (fr) | 2014-06-13 | 2014-06-13 | Procede de preparation de nanofils de silicium. |
| PCT/IB2015/054476 WO2015189827A1 (fr) | 2014-06-13 | 2015-06-12 | Procede de preparation de nanofils de silicium |
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| Publication Number | Publication Date |
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| EP3154903A1 true EP3154903A1 (fr) | 2017-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| EP15734462.3A Pending EP3154903A1 (fr) | 2014-06-13 | 2015-06-12 | Procede de preparation de nanofils de silicium |
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| Country | Link |
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| US (1) | US10676818B2 (fr) |
| EP (1) | EP3154903A1 (fr) |
| FR (1) | FR3022234B1 (fr) |
| WO (1) | WO2015189827A1 (fr) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FR3048241B1 (fr) | 2016-02-29 | 2021-12-31 | Commissariat Energie Atomique | Procede de preparation de nanofils de silicium et/ou de germanium |
| JP6672034B2 (ja) * | 2016-03-24 | 2020-03-25 | 東京応化工業株式会社 | 不純物拡散剤組成物、及び半導体基板の製造方法 |
| CN108728794B (zh) * | 2017-04-24 | 2020-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种有机自支撑膜、其制备方法与应用 |
| WO2020081096A1 (fr) | 2018-10-19 | 2020-04-23 | Novarials Corporation | Séparateurs de batterie à nanofils de céramique |
| CN114388807B (zh) * | 2022-01-12 | 2024-04-09 | 河北坤天新能源股份有限公司 | 一种硅碳负极材料及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6322713B1 (en) * | 1999-07-15 | 2001-11-27 | Agere Systems Guardian Corp. | Nanoscale conductive connectors and method for making same |
| US6286226B1 (en) * | 1999-09-24 | 2001-09-11 | Agere Systems Guardian Corp. | Tactile sensor comprising nanowires and method for making the same |
| FR2944783B1 (fr) * | 2009-04-28 | 2011-06-03 | Commissariat Energie Atomique | Procede d'elaboration de nanofils de silicium et/ou de germanium. |
| EP2539953A4 (fr) | 2010-02-25 | 2014-08-20 | Merck Patent Gmbh | Textile de nanofil de métal ou semi-conducteur du groupe iv |
| WO2011137446A2 (fr) * | 2010-04-30 | 2011-11-03 | University Of Southern California | Fabrication de nanofils de silicium |
| FR2981509B1 (fr) | 2011-10-18 | 2013-12-20 | Thales Sa | Assemblage collecteur-electrode apte a etre integre dans un dispositif de stockage d'energie electrique |
| FR2989838B1 (fr) * | 2012-04-23 | 2017-01-13 | Commissariat Energie Atomique | Electrode, dispositif la comprenant et son procede de fabrication |
-
2014
- 2014-06-13 FR FR1455431A patent/FR3022234B1/fr active Active
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2015
- 2015-06-12 EP EP15734462.3A patent/EP3154903A1/fr active Pending
- 2015-06-12 WO PCT/IB2015/054476 patent/WO2015189827A1/fr not_active Ceased
- 2015-06-12 US US15/316,913 patent/US10676818B2/en active Active
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| Title |
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| See also references of WO2015189827A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR3022234A1 (fr) | 2015-12-18 |
| US10676818B2 (en) | 2020-06-09 |
| FR3022234B1 (fr) | 2017-10-20 |
| US20170114454A1 (en) | 2017-04-27 |
| WO2015189827A1 (fr) | 2015-12-17 |
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